Patent | Date |
---|
Edge termination by ion implantation in GaN Grant 8,927,999 - Kizilyalli , et al. January 6, 2 | 2015-01-06 |
Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas Grant 8,910,644 - Chung , et al. December 16, 2 | 2014-12-16 |
Vertical GaN-based metal insulator semiconductor FET Grant 8,558,242 - Brown , et al. October 15, 2 | 2013-10-15 |
Vertical GaN-Based Metal Insulator Semiconductor FET App 20130146885 - Brown; Richard J. ;   et al. | 2013-06-13 |
Edge Termination by Ion Implantation in GaN App 20130126888 - Kizilyalli; Isik C. ;   et al. | 2013-05-23 |
Enhanced Magnesium Incorporation Into Gallium Nitride Films Through High Pressure Or Ald-type Processing App 20120315741 - Su; Jie ;   et al. | 2012-12-13 |
Plasma-assisted Mocvd Fabrication Of P-type Group Iii-nitride Materials App 20120258580 - Brown; Karl ;   et al. | 2012-10-11 |
Mocvd Fabrication Of Group Iii-nitride Materials Using In-situ Generated Hydrazine Or Fragments There From App 20120258581 - Brown; Karl ;   et al. | 2012-10-11 |
Growth Of Iii-v Led Stacks Using Nano Masks App 20120235115 - Kang; Sang Won ;   et al. | 2012-09-20 |
Substrate Carrier With Multiple Emissivity Coefficients For Thin Film Processing App 20120227667 - HUANG; Juno Yu-Ting ;   et al. | 2012-09-13 |
Cleaning plate for inducing turbulent flow of a processing chamber cleaning glass Grant D664,170 - Chung , et al. July 24, 2 | 2012-07-24 |
Integration Of Cluster Mocvd And Hvpe Reactors With Other Process Chambers App 20120083060 - Cui; Jie ;   et al. | 2012-04-05 |
Gas Distribution Showerhead With High Emissivity Surface App 20120052216 - Hanawa; Hiroji ;   et al. | 2012-03-01 |
p-GaN Fabrication Process Utilizing a Dedicated Chamber and Method of Minimizing Magnesium Redistribution for Sharper Decay Profile App 20120015502 - Cui; Jie ;   et al. | 2012-01-19 |
Closed Loop Mocvd Deposition Control App 20110308453 - Su; Jie ;   et al. | 2011-12-22 |
Method And Apparatus For Inducing Turbulent Flow Of A Processing Chamber Cleaning Gas App 20110308551 - Chung; Hua ;   et al. | 2011-12-22 |
Growth Of Multi-junction Led Film Stacks With Multi-chambered Epitaxy System App 20110204376 - Su; Jie ;   et al. | 2011-08-25 |
Epitaxial Growth Of Compound Nitride Semiconductor Structures App 20110070721 - NIJHAWAN; Sandeep ;   et al. | 2011-03-24 |
System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatus Grant 7,674,352 - Bour , et al. March 9, 2 | 2010-03-09 |
Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE Grant 7,585,769 - Bour , et al. September 8, 2 | 2009-09-08 |
Stacked-substrate processes for production of nitride semiconductor structures Grant 7,575,982 - Bour , et al. August 18, 2 | 2009-08-18 |
Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films Grant 7,560,364 - Bour , et al. July 14, 2 | 2009-07-14 |
Multi-gas Concentric Injection Showerhead App 20090095221 - TAM; Alexander ;   et al. | 2009-04-16 |
Dual-side epitaxy processes for production of nitride semiconductor structures Grant 7,470,599 - Nijhawan , et al. December 30, 2 | 2008-12-30 |
Nitride Optoelectronic Devices With Backside Deposition App 20080296594 - Bour; David ;   et al. | 2008-12-04 |
Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films Grant 7,459,380 - Bour , et al. December 2, 2 | 2008-12-02 |
Stress Measurements During Large-mismatch Epitaxial Processes App 20080206902 - Bour; David ;   et al. | 2008-08-28 |
Nitride optoelectronic devices with backside deposition Grant 7,399,653 - Bour , et al. July 15, 2 | 2008-07-15 |
Stress Measurement And Stress Balance In Films App 20080124817 - Bour; David ;   et al. | 2008-05-29 |
System And Method For Depositing A Gaseous Mixture Onto A Substrate Surface Using A Showerhead Apparatus App 20080124463 - Bour; David ;   et al. | 2008-05-29 |
In-situ Detection Of Gas-phase Particle Formation In Nitride Film Deposition App 20080124453 - BOUR; DAVID ;   et al. | 2008-05-29 |
Stress measurement and stress balance in films Grant 7,374,960 - Bour , et al. May 20, 2 | 2008-05-20 |
Buffer-layer treatment of MOCVD-grown nitride structures Grant 7,364,991 - Bour , et al. April 29, 2 | 2008-04-29 |
Substrate Support Structure With Rapid Temperature Change App 20080092819 - Bour; David ;   et al. | 2008-04-24 |
Hotwall reactor and method for reducing particle formation in GaN MOCVD App 20080050889 - Bour; David ;   et al. | 2008-02-28 |
UV activation of NH3 for III-N deposition App 20070256635 - Bour; David ;   et al. | 2007-11-08 |
Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films App 20070259504 - Bour; David ;   et al. | 2007-11-08 |
Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films App 20070259464 - Bour; David ;   et al. | 2007-11-08 |
Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE App 20070259502 - Bour; David ;   et al. | 2007-11-08 |
Nitride optoelectronic devices with backside deposition App 20070254390 - Bour; David ;   et al. | 2007-11-01 |
Buffer-layer treatment of MOCVD-grown nitride structures App 20070254458 - Bour; David ;   et al. | 2007-11-01 |
MOCVD reactor with concentration-monitor feedback App 20070254093 - Nijhawan; Sandeep ;   et al. | 2007-11-01 |
MOCVD reactor without metalorganic-source temperature control App 20070254100 - Nijhawan; Sandeep ;   et al. | 2007-11-01 |
Epitaxial growth of compound nitride semiconductor structures App 20070240631 - Nijhawan; Sandeep ;   et al. | 2007-10-18 |
Stacked-substrate processes for production of nitride semiconductor structures App 20070243652 - Bour; David ;   et al. | 2007-10-18 |
Double-sided nitride structures App 20070241351 - Nijhawan; Sandeep ;   et al. | 2007-10-18 |
Dual-side epitaxy processes for production of nitride semiconductor structures App 20070243702 - Nijhawan; Sandeep ;   et al. | 2007-10-18 |
Laser employing a zinc-doped tunnel-junction Grant 7,180,923 - Bour , et al. February 20, 2 | 2007-02-20 |
Integrated laser and electro-absorption modulator with improved extinction Grant 6,807,214 - Corzine , et al. October 19, 2 | 2004-10-19 |
Laser employing a zinc-doped tunnel-junction App 20040161013 - Bour, David ;   et al. | 2004-08-19 |
Integrated laser and electro-absorption modulator with improved extinction App 20040022289 - Corzine, Scott W. ;   et al. | 2004-02-05 |
Laser having active region formed above substrate App 20040001521 - Tandon, Ashish ;   et al. | 2004-01-01 |