loadpatents
name:-0.042962789535522
name:-0.019101858139038
name:-0.00053095817565918
Bour; David Patent Filings

Bour; David

Patent Applications and Registrations

Patent applications and USPTO patent grants for Bour; David.The latest application filed is for "vertical gan-based metal insulator semiconductor fet".

Company Profile
0.18.39
  • Bour; David - Cupertino CA US
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Edge termination by ion implantation in GaN
Grant 8,927,999 - Kizilyalli , et al. January 6, 2
2015-01-06
Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas
Grant 8,910,644 - Chung , et al. December 16, 2
2014-12-16
Vertical GaN-based metal insulator semiconductor FET
Grant 8,558,242 - Brown , et al. October 15, 2
2013-10-15
Vertical GaN-Based Metal Insulator Semiconductor FET
App 20130146885 - Brown; Richard J. ;   et al.
2013-06-13
Edge Termination by Ion Implantation in GaN
App 20130126888 - Kizilyalli; Isik C. ;   et al.
2013-05-23
Enhanced Magnesium Incorporation Into Gallium Nitride Films Through High Pressure Or Ald-type Processing
App 20120315741 - Su; Jie ;   et al.
2012-12-13
Plasma-assisted Mocvd Fabrication Of P-type Group Iii-nitride Materials
App 20120258580 - Brown; Karl ;   et al.
2012-10-11
Mocvd Fabrication Of Group Iii-nitride Materials Using In-situ Generated Hydrazine Or Fragments There From
App 20120258581 - Brown; Karl ;   et al.
2012-10-11
Growth Of Iii-v Led Stacks Using Nano Masks
App 20120235115 - Kang; Sang Won ;   et al.
2012-09-20
Substrate Carrier With Multiple Emissivity Coefficients For Thin Film Processing
App 20120227667 - HUANG; Juno Yu-Ting ;   et al.
2012-09-13
Cleaning plate for inducing turbulent flow of a processing chamber cleaning glass
Grant D664,170 - Chung , et al. July 24, 2
2012-07-24
Integration Of Cluster Mocvd And Hvpe Reactors With Other Process Chambers
App 20120083060 - Cui; Jie ;   et al.
2012-04-05
Gas Distribution Showerhead With High Emissivity Surface
App 20120052216 - Hanawa; Hiroji ;   et al.
2012-03-01
p-GaN Fabrication Process Utilizing a Dedicated Chamber and Method of Minimizing Magnesium Redistribution for Sharper Decay Profile
App 20120015502 - Cui; Jie ;   et al.
2012-01-19
Closed Loop Mocvd Deposition Control
App 20110308453 - Su; Jie ;   et al.
2011-12-22
Method And Apparatus For Inducing Turbulent Flow Of A Processing Chamber Cleaning Gas
App 20110308551 - Chung; Hua ;   et al.
2011-12-22
Growth Of Multi-junction Led Film Stacks With Multi-chambered Epitaxy System
App 20110204376 - Su; Jie ;   et al.
2011-08-25
Epitaxial Growth Of Compound Nitride Semiconductor Structures
App 20110070721 - NIJHAWAN; Sandeep ;   et al.
2011-03-24
System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatus
Grant 7,674,352 - Bour , et al. March 9, 2
2010-03-09
Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE
Grant 7,585,769 - Bour , et al. September 8, 2
2009-09-08
Stacked-substrate processes for production of nitride semiconductor structures
Grant 7,575,982 - Bour , et al. August 18, 2
2009-08-18
Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films
Grant 7,560,364 - Bour , et al. July 14, 2
2009-07-14
Multi-gas Concentric Injection Showerhead
App 20090095221 - TAM; Alexander ;   et al.
2009-04-16
Dual-side epitaxy processes for production of nitride semiconductor structures
Grant 7,470,599 - Nijhawan , et al. December 30, 2
2008-12-30
Nitride Optoelectronic Devices With Backside Deposition
App 20080296594 - Bour; David ;   et al.
2008-12-04
Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films
Grant 7,459,380 - Bour , et al. December 2, 2
2008-12-02
Stress Measurements During Large-mismatch Epitaxial Processes
App 20080206902 - Bour; David ;   et al.
2008-08-28
Nitride optoelectronic devices with backside deposition
Grant 7,399,653 - Bour , et al. July 15, 2
2008-07-15
Stress Measurement And Stress Balance In Films
App 20080124817 - Bour; David ;   et al.
2008-05-29
System And Method For Depositing A Gaseous Mixture Onto A Substrate Surface Using A Showerhead Apparatus
App 20080124463 - Bour; David ;   et al.
2008-05-29
In-situ Detection Of Gas-phase Particle Formation In Nitride Film Deposition
App 20080124453 - BOUR; DAVID ;   et al.
2008-05-29
Stress measurement and stress balance in films
Grant 7,374,960 - Bour , et al. May 20, 2
2008-05-20
Buffer-layer treatment of MOCVD-grown nitride structures
Grant 7,364,991 - Bour , et al. April 29, 2
2008-04-29
Substrate Support Structure With Rapid Temperature Change
App 20080092819 - Bour; David ;   et al.
2008-04-24
Hotwall reactor and method for reducing particle formation in GaN MOCVD
App 20080050889 - Bour; David ;   et al.
2008-02-28
UV activation of NH3 for III-N deposition
App 20070256635 - Bour; David ;   et al.
2007-11-08
Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films
App 20070259504 - Bour; David ;   et al.
2007-11-08
Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films
App 20070259464 - Bour; David ;   et al.
2007-11-08
Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE
App 20070259502 - Bour; David ;   et al.
2007-11-08
Nitride optoelectronic devices with backside deposition
App 20070254390 - Bour; David ;   et al.
2007-11-01
Buffer-layer treatment of MOCVD-grown nitride structures
App 20070254458 - Bour; David ;   et al.
2007-11-01
MOCVD reactor with concentration-monitor feedback
App 20070254093 - Nijhawan; Sandeep ;   et al.
2007-11-01
MOCVD reactor without metalorganic-source temperature control
App 20070254100 - Nijhawan; Sandeep ;   et al.
2007-11-01
Epitaxial growth of compound nitride semiconductor structures
App 20070240631 - Nijhawan; Sandeep ;   et al.
2007-10-18
Stacked-substrate processes for production of nitride semiconductor structures
App 20070243652 - Bour; David ;   et al.
2007-10-18
Double-sided nitride structures
App 20070241351 - Nijhawan; Sandeep ;   et al.
2007-10-18
Dual-side epitaxy processes for production of nitride semiconductor structures
App 20070243702 - Nijhawan; Sandeep ;   et al.
2007-10-18
Laser employing a zinc-doped tunnel-junction
Grant 7,180,923 - Bour , et al. February 20, 2
2007-02-20
Integrated laser and electro-absorption modulator with improved extinction
Grant 6,807,214 - Corzine , et al. October 19, 2
2004-10-19
Laser employing a zinc-doped tunnel-junction
App 20040161013 - Bour, David ;   et al.
2004-08-19
Integrated laser and electro-absorption modulator with improved extinction
App 20040022289 - Corzine, Scott W. ;   et al.
2004-02-05
Laser having active region formed above substrate
App 20040001521 - Tandon, Ashish ;   et al.
2004-01-01

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