U.S. patent number T964,009 [Application Number 05/673,510] was granted by the patent office on 1977-11-01 for high voltage semiconductor structure. Invention is credited to Te-Long Chiu, Madhukar B. Vora.

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United States Patent	T964,009
Chiu ,   et al.	November 1, 1977

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High voltage semiconductor structure

Abstract

in a field effect transistor having a semiconductor body, spaced source and drain regions, an insulating layer on the surface of the body, and an electrode to the source region, the improvement being a field shield electrode on the insulating layer overlying at least the PN junction of the drain region that terminates at the interface of the surface of the body and the insulating layer, and a gate electrode on the insulating layer over at least a portion of the channel region, the gate electrode and the field shield electrode in combination overlying all of the channel region. Another feature of the invention is a high voltage line for use on a semiconductor device consisting of a diffused region of opposite conductivity in the semiconductor body, an overlying insulating layer having an opening therein, and an overlying field shield conductive stripe that overlies the PN junction of the diffused region that terminates at the surface of the body.

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Inventors:	Chiu; Te-Long (Wappingers Falls, NY), Vora; Madhukar B. (Hopewell Junction, NY)
Family ID:	27068696
Appl. No.:	05/673,510
Filed:	April 5, 1976

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Related U.S. Patent Documents

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	Application Number	Filing Date	Patent Number	Issue Date
	547912	Feb 6, 1975
	361101	May 17, 1973

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Current U.S. Class:	257/409; 257/365
Current CPC Class:	H01L 29/0638 (20130101); H01L 29/78 (20130101)
Current International Class:	H01L 29/02 (20060101); H01L 29/06 (20060101); H01L 29/66 (20060101); H01L 29/78 (20060101); H01L 029/78 ()

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