U.S. patent number RE47,711 [Application Number 14/882,893] was granted by the patent office on 2019-11-05 for white light devices using non-polar or semipolar gallium containing materials and phosphors.
This patent grant is currently assigned to SORAA, INC.. The grantee listed for this patent is SORAA, INC.. Invention is credited to Mark P. D'Evelyn, Eric M. Hall, James W. Raring.
United States Patent |
RE47,711 |
Raring , et al. |
November 5, 2019 |
White light devices using non-polar or semipolar gallium containing
materials and phosphors
Abstract
A packaged optical device includes a substrate having a surface
region with light emitting diode devices fabricated on a semipolar
or nonpolar GaN substrate. The LEDs emit polarized light and are
characterized by an overlapped electron wave function and a hole
wave function. Phosphors within the package are excited by the
polarized light and, in response, emit electromagnetic radiation of
a second wavelength.
Inventors: |
Raring; James W. (Fremont,
CA), Hall; Eric M. (Fremont, CA), D'Evelyn; Mark P.
(Fremont, CA) |
Applicant: |
Name |
City |
State |
Country |
Type |
SORAA, INC. |
Fremont |
CA |
US |
|
|
Assignee: |
SORAA, INC. (Fremont,
CA)
|
Family
ID: |
1000003446042 |
Appl.
No.: |
14/882,893 |
Filed: |
October 14, 2015 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
|
|
12534829 |
Feb 28, 2012 |
8124996 |
|
|
|
61086139 |
Aug 4, 2008 |
|
|
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Reissue of: |
13360535 |
Jan 27, 2012 |
8558265 |
Oct 15, 2013 |
|
|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L
33/502 (20130101); H01L 33/32 (20130101); H01L
33/32 (20130101); H01L 33/502 (20130101); H01L
2224/48091 (20130101); H01L 2924/01063 (20130101); H01L
2224/92247 (20130101); H01L 33/16 (20130101); H01L
2924/01057 (20130101); H01L 2924/12044 (20130101); H01L
2924/09701 (20130101); H01L 2224/48247 (20130101); H01L
33/58 (20130101); H01L 2924/01322 (20130101); H01L
2224/73265 (20130101); H01L 2924/01019 (20130101); H01L
2924/01037 (20130101); H01L 2224/73265 (20130101); H01L
2924/01037 (20130101); H01L 2224/48091 (20130101); H01L
33/16 (20130101); H01L 2924/12044 (20130101); H01L
33/54 (20130101); H01L 2924/09701 (20130101); H01L
2924/01063 (20130101); H01L 2924/01078 (20130101); H01L
2924/01021 (20130101); H01L 2924/01025 (20130101); H01L
2924/01019 (20130101); H01L 33/58 (20130101); H01L
2924/01057 (20130101); H01L 2224/92247 (20130101); H01L
2924/01322 (20130101); H01L 2924/0102 (20130101); H01L
2924/01012 (20130101); H01L 2924/01079 (20130101); H01L
2224/48247 (20130101); H01L 2924/01012 (20130101); H01L
2924/01021 (20130101); H01L 2924/01078 (20130101); H01L
33/54 (20130101); H01L 2924/01079 (20130101); H01L
2924/01025 (20130101); H01L 2924/0102 (20130101); H01L
2224/48091 (20130101); H01L 2224/48091 (20130101); H01L
2924/00014 (20130101); H01L 2924/00014 (20130101); H01L
2924/12044 (20130101); H01L 2924/12044 (20130101); H01L
2924/00 (20130101); H01L 2924/00 (20130101) |
Current International
Class: |
H01L
33/00 (20100101); H01L 33/50 (20100101); H01L
33/32 (20100101); H01L 33/54 (20100101); H01L
33/58 (20100101); H01L 33/16 (20100101) |
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WO |
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Feb 2012 |
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WO |
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|
Primary Examiner: Xu; Ling X
Attorney, Agent or Firm: FisherBroyles LLP
Parent Case Text
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation of U.S. application Ser. No.
12/534,829, filed Aug. 3, 2009, now U.S. Pat. No. 8,124,996 and to
U.S. Provisional Application No. 61/086,139, filed Aug. 4, 2008,
commonly assigned, and incorporated by reference herein in its
entirety for all purposes.
Claims
What is claimed is:
1. A light emitting device comprising: a substrate member
comprising a first surface region; one or more light emitting diode
devices overlying the first surface region, at least one of the
light emitting diode devices .[.being fabricated on.].
.Iadd.comprising .Iaddend.a semipolar or nonpolar .Iadd.bulk
.Iaddend.GaN containing .[.device.]. substrate .Iadd.and light
emitting layers.Iaddend., .[.the device substrate comprising a bulk
gallium nitride substrate, the at least one or more light emitting
diode devices fabricated on the semipolar or nonpolar GaN
containing device substrate emitting.]. .Iadd.said light emitting
diode device being configured to emit .Iaddend.substantially
polarized emission of one or more first wavelengths; an optically
transparent member coupled to the one or more light emitting diode
devices; .[.an optical path provided between the one or more light
emitting diode devices and the optically transparent member; and.].
.Iadd.and .Iaddend.a thickness of one or more entities formed
within a vicinity of the optically transparent member, one or more
of the entities being excited by the substantially polarized
emission to emit electromagnetic radiation at one or more second
wavelengths .Iadd.such that said light emitting device emits
polarized and non-polarized light.Iaddend.; wherein the bulk
gallium nitride substrate has a dislocation density in the plane of
the large-area surface that is less than 5.times.10.sup.6
cm.sup.-2.
2. The light emitting device of claim 1, wherein at least one of
the light emitting diode devices comprises a quantum well region,
the quantum well region being characterized by an electron wave
function and a hole wave function, the electron wave function and
the hole wave function being substantially overlapped within a
predetermined spatial region of the quantum well region.
3. The light emitting device of claim 1, wherein the thickness of
the one or more entities is formed overlying a first side of the
optically transparent member, the first side facing the one or more
of the light emitting diode devices.
4. The light emitting device of claim 1, wherein the one or more
light emitting diode devices comprise at least a blue LED device,
the substantially polarized emission being blue light.
5. The light emitting device of claim 1, wherein the one or more
light emitting diode devices comprise at least a blue LED device
capable of emitting electromagnetic radiation at a wavelength range
from about 430 nanometers to about 490 nanometers, the
substantially polarized emission being blue light.
6. The light emitting device of claim 1, wherein the one or more
light emitting diode devices comprise at least a blue LED device
capable of emitting electromagnetic radiation at a range from about
430 nanometers to about 490 nanometers and the one or more entities
is capable of emitting substantially yellow light, the
substantially polarized emission being blue light.
7. The light emitting device of claim 6 wherein the one or more
entities comprises a phosphor or phosphor blend selected from one
or more of (Y, Gd, Tb, Sc, Lu, La).sub.3(Al, Ga,
In).sub.5O.sub.12:Ce.sup.3+, SrGa.sub.2S.sub.4:Eu.sup.2+,
SrS:Eu.sup.2+, and colloidal quantum dot thin films comprising
CdTe, ZnS, ZnSe, ZnTe, CdSe, or CdTe.
8. The light emitting device of claim 6 further comprising a
phosphor capable of emitting substantially red light, wherein the
phosphor is selected from one or more of the group consisting of
(Gd,Y,Lu,La).sub.2O.sub.3:Eu.sup.3+,
Bi.sup.3+(Gd,Y,Lu,La).sub.2O.sub.2S:EU.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La)VO.sub.4:Eu.sup.3+, Bi.sup.3+; Y.sub.2(O,S).sub.3:
Eu.sup.3+; Ca.sub.1-xMo.sub.1-ySi.sub.yO.sub.4: where
0.05.ltoreq.x.ltoreq.0.5, 0.ltoreq.y.ltoreq.0.1;
(Li,Na,K).sub.5Eu(W,Mo)O.sub.4; .[.(Ca,Sr)S:Eu.sup.2+;.].
SrY.sub.2S.sub.4:Eu.sup.2+; CaLa.sub.2S.sub.4:Ce.sup.3+;
(Ca,Sr)S:Eu.sup.2+; 3.5MgO*0.5MgF.sub.2*GeO.sub.2:Mn.sup.4+ (MFG);
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
(Y,Lu).sub.2WO.sub.6:Eu.sup.3+, Mo.sup.6+;
(Ba,Sr,Ca).sub.3Mg.sub.xSi.sub.2O.sub.8:Eu.sup.2+, Mn.sup.2+,
wherein 1.ltoreq.x.ltoreq.2;
(RE.sub.1-yCe.sub.y)Mg.sub.2-xLi.sub.xSi.sub.3,PxO.sub.12, where RE
is at least one of Sc, Lu, Gd, Y, and Tb,
0.0001.ltoreq.x.ltoreq.0.1 and 0.001.ltoreq.y.ltoreq.0.1; (Y, Gd,
Lu, La).sub.2-xEu.sub.xW.sub.1-yMo.sub.yO.sub.6, where
0.5.ltoreq.x..ltoreq.1.0, 0.01.ltoreq.y.ltoreq.1.0;
(SrCa).sub.1-xEu.sub.xSi.sub.5N.sub.8, where
0.01.ltoreq.x.ltoreq.0.3; SrZnO.sub.2:Sm.sup.+; M.sub.mO.sub.nX,
wherein M is selected from the group of Sc, Y, a lanthanide, an
alkali earth metal and mixtures thereof; X is a halogen;
1.ltoreq.m.ltoreq.3; and 1.ltoreq.n.ltoreq.4, and wherein the
lanthanide doping level can range from 0.1 to 40% spectral weight;
and Eu.sup.3+ activated phosphate or borate phosphors; and mixtures
thereof.
9. The light emitting device of claim 1, wherein the one or more
light emitting diode devices comprise at least a violet LED device
capable of emitting electromagnetic radiation at a range from about
380 nanometers to about 440 nanometers and the one or more entities
are capable of emitting substantially white light, the
substantially polarized emission being violet light.
10. The light emitting device of claim 1, wherein the one or more
entities comprise a blend of wavelength converting materials
capable of emitting substantially blue light, substantially green
light, and substantially red light.
11. The light emitting device of claim 10 wherein the blue emitting
phosphor is selected from the group consisting of
(Ba,Sr,Ca).sub.5(PO.sub.4).sub.3(Cl,F,Br,OH):Eu.sup.2+, Mn.sup.2+;
Sb.sup.3+,(Ba,Sr,Ca)MgAl.sub.10O.sub.17:Eu.sup.2+, Mn.sup.2+;
(Ba,Sr,Ca)BPO.sub.5:Eu.sup.2+, Mn.sup.2+; (Sr,
Ca).sub.10(PO.sub.4).sub.6*nB.sub.2O.sub.3:Eu.sup.2+;
2SrO*0.84P.sub.2O5*0.16B.sub.2O.sub.3:Eu.sup.2+;
Sr.sub.2Si.sub.3O.sub.8*2SrCl.sub.2:Eu.sup.2+;
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
Sr.sub.4Al.sub.14O.sub.25:Eu.sup.2+ (SAE);
BaAl.sub.8O.sub.13:Eu.sup.2+; and mixtures thereof.
12. The light emitting device of claim 10 wherein the green
phosphor is selected from the group consisting of
(Ba,Sr,Ca)MgAl.sub.10O.sub.17:Eu.sup.2+, Mn.sup.2+ (BAMn);
(Ba,Sr,Ca)Al.sub.2O.sub.4:Eu.sup.2+;
(Y,Gd,Lu,Sc,La)BO.sub.3:Ce.sup.3+,Tb.sup.3+;
Ca.sub.8Mg(SiO.sub.4).sub.4Cl.sub.2:Eu.sup.2+, Mn.sup.2+;
(Ba,Sr,Ca).sub.2SiO.sub.4:Eu.sup.2+;
(Ba,Sr,Ca).sub.2(Mg,Zn)Si.sub.2O.sub.7:Eu.sup.2+;
(Sr,Ca,Ba)(Al,Ga,ln).sub.2S.sub.4:Eu.sup.2+;
(Y,Gd,Tb,La,Sm,Pr,Lu).sub.3(Al,Ga).sub.5O.sub.12:Ce.sup.3+;
(Ca,Sr).sub.8(Mg,Zn)(SiO.sub.4).sub.4Cl.sub.2:Eu.sup.2+, Mn.sup.2+
(CASI); Na.sub.2Gd.sub.2B.sub.2O.sub.7:Ce.sup.3+, Tb.sup.3+;
(Ba,Sr).sub.2(Ca,Mg,Zn)B.sub.2O.sub.6:K,Ce,Tb; and mixtures
thereof.
13. The light emitting device of claim 10 wherein the red phosphor
is selected from the group consisting of
(Gd,Y,Lu,La).sub.2O.sub.3:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La).sub.2O.sub.2S:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La)VO.sub.4:Eu.sup.3+, Bi.sup.3+; Y.sub.2(O,S).sub.3:
Eu.sup.3+; Ca.sub.1-xMo.sub.1-ySi.sub.yO.sub.4: where
0.05.ltoreq.x.ltoreq.0.5, 0.ltoreq.y.ltoreq.0.1;
(Li,Na,K).sub.5Eu(W,Mo)O.sub.4; (Ca,Sr)S:Eu.sup.2+;
SrY.sub.2S.sub.4:Eu.sup.2+; CaLa.sub.2S.sub.4:Ce.sup.3+;
.[.(Ca,Sr)S:Eu.sup.2+;.]. 3.5MgO*0.5MgF.sub.2*GeO.sub.2:Mn.sup.4+
(MFG); (Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
(Y,Lu).sub.2WO.sub.6:Eu.sup.3+, Mo.sup.6+;
(Ba,Sr,Ca).sub.3Mg.sub.xSi.sub.2O.sub.8:Eu.sup.2+, Mn.sup.2+,
wherein 1.ltoreq.x.ltoreq.2;
(RE.sub.1-yCe.sub.y)Mg.sub.2-xLi.sub.xSi.sub.3-xP.sub.xO.sub.12,
where RE is at least one of Sc, Lu, Gd, Y, and Tb,
0.0001.ltoreq.x.ltoreq.0.1 and 0.001<y<0.1; (Y, Gd, Lu,
La).sub.2-xEu.sub.xW.sub.1-yMo.sub.yO.sub.6, where
0.5.ltoreq.x..ltoreq.1.0, 0.01.ltoreq.y.ltoreq.1.0;
(SrCa).sub.1-xEu.sub.xSi.sub.5N.sub.8, where
0.01.ltoreq.x.ltoreq.0.3; SrZnO.sub.2:Sm.sup.+; M.sub.mO.sub.nX,
wherein M is selected from the group of Sc, Y, a lanthanide, an
alkali earth metal and mixtures thereof; X is a halogen;
1.ltoreq.m.ltoreq.3; and 1.ltoreq.n.ltoreq.4, and wherein the
lanthanide doping level can range from 0.1 to 40% spectral weight;
and Eu.sup.3+ activated phosphate or borate phosphors; and mixtures
thereof.
14. The light emitting device of claim 1, wherein the one or more
entities being a plurality of wavelength converting entities are
selected from a red emitting wavelength converting material, a
green emitting wavelength converting material, a blue emitting
wavelength converting material, and a yellow emitting wavelength
converting material.
15. The light emitting device of claim 1, wherein the thickness of
the one or more entities is arc provided by at least one of
electrophoretic deposition, plating, sputtering, spraying, dipping,
and dispensing.
16. The light emitting device of claim 1, wherein the one or more
light emitting diode devices comprise two light emitting
devices.
17. The light emitting device of claim 1, wherein the bulk gallium
nitride substrate was formed by slicing from a boule that was grown
by hydride vapor epitaxy or ammonothermally.
18. The light emitting device of claim 1, wherein the thickness of
the one or more entities is formed overlying the one or more light
emitting diode devices.
19. The light emitting device of claim 1, .[.further comprising.].
.Iadd.wherein the optical clear member comprises .Iaddend.an
enclosure, wherein the enclosure has a shape chosen from among
annular, circular, egg-shaped, trapezoidal, or a combination
thereof.
20. The light emitting device of claim 1, wherein the device is
packaged and is coupled to a rectifier.
21. The light emitting device of claim 1, further comprising a
diffuser, the diffuser comprising at least one of TiO.sub.2,
CaF.sub.2, SiO.sub.2, CaCO.sub.3, and BaSO.sub.4.
22. A light emitting device comprising: a substrate member
comprising a first surface region; one or more light emitting diode
devices overlying the first surface region, at least one of the
light emitting diode devices .[.being fabricated on.].
.Iadd.comprising .Iaddend.a semipolar or nonpolar GaN containing
.[.device.]. substrate .Iadd.and light emitting layers.Iaddend.,
.[.the device substrate comprising a bulk gallium nitride
substrate, the at least one or more light emitting diode devices
fabricated on the semipolar or nonpolar GaN containing device
substrate emitting.]. .Iadd.said light emitting diode device being
configured to emit .Iaddend.substantially polarized emission of one
or more first wavelengths; an optically transparent member coupled
to the one or more light emitting diode devices; .[.an optical path
provided between the one or more light emitting diode devices and
the optically transparent member;.]. and a thickness of one or more
entities formed within a vicinity of the optically transparent
member, one or more of the entities being excited by the
substantially polarized emission to emit electromagnetic radiation
at one or more second wavelengths .Iadd.such that said light
emitting device emits polarized and non-polarized light.Iaddend.;
wherein a crystallographic orientation of the device substrate is
within .+-.5 degrees of the {1 -1 0 0} m plane, the {1 1 -2 0} a
plane, the {1 1 -2 2} plane, the {2 0 -2.+-.1} plane, the {1 -1
0.+-.1} plane, the {1 -1 0 -.+-.2} plane, or the {1 -1 0.+-.3}
plane.
23. The light emitting device of claim 22, wherein at least one of
the light emitting diode devices comprises a quantum well region,
the quantum well region being characterized by an electron wave
function and a hole wave function, the electron wave function and
the hole wave function being substantially overlapped within a
predetermined spatial region of the quantum well region.
24. The light emitting device of claim 22, wherein the thickness of
the one or more entities is formed overlying a first side of the
optically transparent member, the first side facing the one or more
of the light emitting diode devices.
25. The light emitting device of claim 22, wherein the one or more
light emitting diode devices comprise at least a blue LED device,
the substantially polarized emission being blue light.
26. The light emitting device of claim 22, wherein the one or more
light emitting diode devices comprise at least a blue LED device
capable of emitting electromagnetic radiation at a wavelength range
from about 430 nanometers to about 490 nanometers, the
substantially polarized emission being blue light.
27. The light emitting device of claim 22, wherein the one or more
light emitting diode devices comprise at least a blue LED device
capable of emitting electromagnetic radiation at a range from about
430 nanometers to about 490 nanometers and the one or more entities
is capable of emitting substantially yellow light, the
substantially polarized emission being blue light.
28. The light emitting device of claim 27, wherein the one or more
entities comprises a phosphor or phosphor blend selected from one
or more of (Y, Gd, Tb, Sc, Lu, La).sub.3(Al, Ga,
In).sub.5O.sub.12:Ce.sup.3+, SrGa.sub.2S.sub.4:Eu.sup.2+,
SrS:Eu.sup.2+, and colloidal quantum dot thin films comprising
CdTe, ZnS, ZnSe, ZnTe, CdSe, or CdTe.
29. The light emitting device of claim 27, further comprising a
phosphor capable of emitting substantially red light, wherein the
phosphor is selected from one or more of the group consisting of
(Gd,Y,Lu,La).sub.2O.sub.3:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La).sub.2O.sub.2S:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La)VO.sub.4:Eu.sup.3+, Bi.sup.3+; Y.sub.2(O,S).sub.3:
Eu.sup.3+; Ca.sub.1-xMo.sub.1-ySi.sub.yO.sub.4: where
0.05.ltoreq.x.ltoreq.0.5, 0.ltoreq.y.ltoreq.0.1;
(Li,Na,K).sub.5Eu(W,Mo)O.sub.4; .[.(Ca,Sr)S:Eu.sup.2+;.].
SrY.sub.2S.sub.4:Eu.sup.2+; CaLa.sub.2S.sub.4:Ce.sup.3+;
(Ca,Sr)S:Eu.sup.2+; 3.5MgO*0.5MgF.sub.2*GeO.sub.2:Mn.sup.4+ (MFG);
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
(Y,Lu).sub.2WO.sub.6:Eu.sup.3+, Mo.sup.6+;
(Ba,Sr,Ca).sub.3Mg.sub.xSi.sub.2O.sub.8:Eu.sup.2+, Mn.sup.2+,
wherein 1.ltoreq.x.ltoreq.2;
(RE.sub.1-yCe.sub.y)Mg.sub.2-xLi.sub.xSi.sub.3,PxO.sub.12, where RE
is at least one of Sc, Lu, Gd, Y, and Tb,
0.0001.ltoreq.x.ltoreq.0.1 and 0.001.ltoreq.y.ltoreq.0.1; (Y, Gd,
Lu, La).sub.2-xEu.sub.xW.sub.1-yMo.sub.yO.sub.6, where
0.5.ltoreq.x..ltoreq.1.0, 0.01.ltoreq.y.ltoreq.1.0;
(SrCa).sub.1-xEu.sub.xSi.sub.5N.sub.8, where
0.01.ltoreq.x.ltoreq.0.3; SrZnO.sub.2:Sm.sup.+3; M.sub.mO.sub.nX,
wherein M is selected from the group of Sc, Y, a lanthanide, an
alkali earth metal and mixtures thereof; X is a halogen;
1.ltoreq.m.ltoreq.3; and 1.ltoreq.n.ltoreq.4, and wherein the
lanthanide doping level can range from 0.1 to 40% spectral weight;
and Eu.sup.3+ activated phosphate or borate phosphors; and mixtures
thereof.
30. The light emitting device of claim 22, wherein the one or more
light emitting diode devices comprise at least a violet LED device
capable of emitting electromagnetic radiation at a range from about
380 nanometers to about 440 nanometers and the one or more entities
are capable of emitting substantially white light, the
substantially polarized emission being violet light.
31. The light emitting device of claim 22, wherein the one or more
entities comprise a blend of wavelength converting materials
capable of emitting substantially blue light, substantially green
light, and substantially red light.
32. The light emitting device of claim 31, wherein the blue
emitting phosphor is selected from the group consisting of
(Ba,Sr,Ca).sub.5(PO.sub.4).sub.3(Cl,F,Br,OH):Eu.sup.2+, Mn.sup.2+;
Sb.sup.3+,(Ba,Sr,Ca)MgAl.sub.10O.sub.17:Eu.sup.2+, Mn.sup.2+;
(Ba,Sr,Ca)BPO.sub.5:Eu.sup.2+, Mn.sup.2+; (Sr,
Ca).sub.10(PO.sub.4).sub.6*nB.sub.2O.sub.3:Eu.sup.2+;
2SrO*0.84P.sub.2O5*0.16B.sub.2O.sub.3:Eu.sup.2+;
Sr.sub.2Si.sub.3O.sub.8*2SrCl.sub.2:Eu.sup.2+;
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
Sr.sub.4Al.sub.14O.sub.25:Eu.sup.2+ (SAE);
BaAl.sub.8O.sub.13:Eu.sup.2+; and mixtures thereof.
33. The light emitting device of claim 31, wherein the green
phosphor is selected from the group consisting of
(Ba,Sr,Ca)MgAl.sub.10O.sub.17:Eu.sup.2+, Mn.sup.2+ (BAMn);
(Ba,Sr,Ca)Al.sub.2O.sub.4:Eu.sup.2+;
(Y,Gd,Lu,Sc,La)BO.sub.3:Ce.sup.3+,Tb.sup.3+;
Ca.sub.8Mg(SiO.sub.4).sub.4Cl.sub.2:Eu.sup.2+, Mn.sup.2+;
(Ba,Sr,Ca).sub.2SiO.sub.4:Eu.sup.2+;
(Ba,Sr,Ca).sub.2(Mg,Zn)Si.sub.2O.sub.7:Eu.sup.2+; (Sr,
Ca,Ba)(Al,Ga,ln).sub.2S.sub.4:Eu.sup.2+;
(Y,Gd,Tb,La,Sm,Pr,Lu).sub.3(Al,Ga).sub.5O.sub.12:Ce.sup.3+;
(Ca,Sr).sub.8(Mg,Zn)(SiO.sub.4).sub.4Cl.sub.2:Eu.sup.2+, Mn.sup.2+
(CASI); Na.sub.2Gd.sub.2B.sub.2O.sub.7:Ce.sup.3+, Tb.sup.3+;
(Ba,Sr).sub.2(Ca,Mg,Zn)B.sub.2O.sub.6:K,Ce,Tb; and mixtures
thereof.
34. The light emitting device of claim 31, wherein the red phosphor
is selected from the group consisting of
(Gd,Y,Lu,La).sub.2O.sub.3:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La).sub.2O.sub.2S:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La)VO.sub.4:Eu.sup.3+, Bi.sup.3+; Y.sub.2(O,S).sub.3:
Eu.sup.3+; Ca.sub.1-xMo.sub.1-ySi.sub.yO.sub.4: where
0.05.ltoreq.x.ltoreq.0.5, 0.ltoreq.y.ltoreq.0.1;
(Li,Na,K).sub.5Eu(W,Mo)O.sub.4; (Ca,Sr)S:Eu.sup.2+;
SrY.sub.2S.sub.4:Eu.sup.2+; CaLa.sub.2S.sub.4:Ce.sup.3+;
.[.(Ca,Sr)S:Eu.sup.2+;.]. 3.5MgO*0.5MgF.sub.2*GeO.sub.2:Mn.sup.4+
(MFG); (Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
(Y,Lu).sub.2WO.sub.6:Eu.sup.3+, Mo.sup.6+;
(Ba,Sr,Ca).sub.3Mg.sub.xSi.sub.2O.sub.8:Eu.sup.2+, Mn.sup.2+,
wherein 1.ltoreq.x.ltoreq.2;
(RE.sub.1-yCe.sub.y)Mg.sub.2-xLi.sub.xSi.sub.3-xP.sub.xO.sub.12,
where RE is at least one of Sc, Lu, Gd, Y, and Tb,
0.0001.ltoreq.x.ltoreq.0.1 and 0.001.ltoreq.y.ltoreq.0.1; (Y, Gd,
Lu, La).sub.2-xEu.sub.xW.sub.1-yMo.sub.yO.sub.6, where
0.5.ltoreq.x..ltoreq.1.0, 0.01.ltoreq.y.ltoreq.1.0;
(SrCa).sub.1-xEu.sub.xSi.sub.5N.sub.8, where
0.01.ltoreq.x.ltoreq.0.3; SrZnO.sub.2:Sm.sup.+; M.sub.mO.sub.nX,
wherein M is selected from the group of Sc, Y, a lanthanide, an
alkali earth metal and mixtures thereof; X is a halogen;
1.ltoreq.m.ltoreq.3; and 1.ltoreq.n.ltoreq.4, and wherein the
lanthanide doping level can range from 0.1 to 40% spectral weight;
and Eu.sup.3+ activated phosphate or borate phosphors; and mixtures
thereof.
35. The light emitting device of claim 22, wherein the one or more
entities being a plurality of wavelength converting entities are
selected from a red emitting wavelength converting material, a
green emitting wavelength converting material, a blue emitting
wavelength converting material, and a yellow emitting wavelength
converting material.
36. The light emitting device of claim 22, wherein the thickness of
the one or more entities is provided by at least one of
electrophoretic deposition, plating, sputtering, spraying, dipping,
and dispensing.
37. The light emitting device of claim 22, wherein the one or more
light emitting diode devices comprise two light emitting
devices.
38. The light emitting device of claim 22, wherein the bulk gallium
nitride substrate was formed by slicing from a boule that was grown
by hydride vapor epitaxy or ammonothermally.
39. The light emitting device of claim 22, wherein the thickness of
the one or more entities is formed overlying the one or more light
emitting diode devices.
40. The light emitting device of claim 22, further comprising an
enclosure, wherein the enclosure has a shape chosen from among
annular, circular, egg-shaped, trapezoidal, or a combination
thereof.
41. The light emitting device of claim 22, wherein the device is
packaged and is coupled to a rectifier.
42. The light emitting device of claim 22, further comprising a
diffuser, the diffuser comprising at least one of TiO.sub.2,
CaF.sub.2, SiO.sub.2, CaCO.sub.3, and BaSO.sub.4.
43. A light emitting device comprising: a substrate member having a
first surface; at least one light emitting diode overlying the
first surface emitting a substantially polarized emission of first
wavelengths, the light emitting diode comprising a .[.device.].
.Iadd.semipolar or nonpolar bulk GaN containing .Iaddend.substrate
.[.comprising a semipolar or nonpolar bulk gallium nitride
substrate.]. .Iadd. and light emitting layers, said light emitting
diode device being configured to emit substantially polarized
emission of one or more first wavelengths.Iaddend.; an optically
transparent member coupled to the at least one light emitting
diode; .[.an optical path between the at least one light emitting
diode and the optically transparent;.]. and a blend of phosphors,
the phosphors being excited by the substantially polarized emission
of first wavelengths to thereby emit electromagnetic radiation at
second wavelengths .Iadd.such that said light emitting device emits
polarized and non-polarized light.Iaddend.; wherein the
substantially polarized emission of first wavelengths comprises
blue light and the phosphor blend emits electromagnetic radiation
at second wavelengths comprising yellow and red.
44. A light emitting device comprising: a substrate member having a
first surface; at least one light emitting diode overlying the
first surface emitting a substantially polarized emission of first
wavelengths, the light emitting diode comprising .[.a device
substrate comprising.]. a semipolar or nonpolar bulk .[.gallium
nitride.]. .Iadd.GaN containing .Iaddend.substrate .Iadd.and light
emitting layers, said light emitting diode device being configured
to emit substantially polarized emission of one or more first
wavelengths.Iaddend.; an optically transparent member coupled to
the at least one light emitting diode; .[.an optical path between
the at least one light emitting diode and the optically
transparent;.]. and a blend of phosphors, the phosphors being
excited by the substantially polarized emission of first
wavelengths to thereby emit electromagnetic radiation at second
wavelengths .Iadd.such that said light emitting device emits
polarized and non-polarized light.Iaddend.; wherein the
substantially polarized emission of first wavelengths comprises
violet light and the phosphor blend emits electromagnetic radiation
at second wavelengths comprising blue, green, and red.
45. A light emitting device comprising: a substrate member having a
first surface; at least one light emitting diode overlying the
first surface emitting a substantially polarized emission of first
wavelengths, the light emitting diode comprising .[.a device
substrate comprising.]. a semipolar or nonpolar bulk gallium
nitride .Iadd.containing .Iaddend.substrate .Iadd.and light
emitting layers, said light emitting diode device being configured
to emit substantially polarized emission of one or more first
wavelengths.Iaddend.; an optically transparent member coupled to
the at least one light emitting diode; .[.an optical path between
the at least one light emitting diode and the optically
transparent;.]. and a blend of phosphors, the phosphors being
excited by the substantially polarized emission of first
wavelengths to thereby emit electromagnetic radiation at second
wavelengths .Iadd.such that said light emitting device emits
polarized and non-polarized light.Iaddend.; wherein the
substantially polarized emission of first wavelengths comprises
blue light and the phosphor blend emits electromagnetic radiation
at second wavelengths comprising green and red.
.Iadd.46. A light emitting device for an automotive application
comprising: a substrate member comprising a first surface region;
one or more laser devices overlying the first surface region, at
least one of the laser devices comprising a semipolar or nonpolar
GaN containing substrate, the at least one or more laser devices
configured to emit substantially polarized emission of one or more
first wavelengths; an optically transparent member coupled to the
one or more laser devices; and a thickness of one or more entities
formed within a vicinity of the optically transparent member, one
or more of the entities being excited by the substantially
polarized emission to emit electromagnetic radiation at one or more
second wavelengths such that said light emitting device emits
polarized and non-polarized light; wherein the bulk gallium nitride
substrate has a dislocation density in the plane of the large-area
surface that is less than 5.times.10.sup.6 cm.sup.-2; wherein the
light emitting device is configured for connection to an automotive
device..Iaddend.
.Iadd.47. The light emitting device of claim 46, wherein at least
one of the laser devices comprises a quantum well region, the
quantum well region being characterized by an electron wave
function and a hole wave function, the electron wave function and
the hole wave function being substantially overlapped within a
predetermined spatial region of the quantum well region; wherein
the one or more laser device having an epitaxial material formed on
the semipolar or nonpolar GaN containing device
substrate..Iaddend.
.Iadd.48. The light emitting device of claim 46, wherein the
thickness of the one or more entities is formed overlying a first
side of the optically transparent member, the first side facing the
one or more of the laser devices..Iaddend.
.Iadd.49. The light emitting device of claim 46, wherein the one or
more laser devices comprise at least a blue laser device, the
substantially polarized emission being blue light..Iaddend.
.Iadd.50. The light emitting device of claim 46, wherein the one or
more laser devices comprise at least a blue laser device capable of
emitting electromagnetic radiation at a wavelength range from about
430 nanometers to about 490 nanometers, the substantially polarized
emission being blue light..Iaddend.
.Iadd.51. The light emitting device of claim 46, wherein the one or
more laser devices comprise at least a blue laser device capable of
emitting electromagnetic radiation at a range from about 430
nanometers to about 490 nanometers and the one or more entities is
capable of emitting substantially yellow light, the substantially
polarized emission being blue light..Iaddend.
.Iadd.52. The light emitting device of claim 51, wherein the one or
more entities comprises a phosphor or phosphor blend selected from
one or more of (Y, Gd, Tb, Sc, Lu, La).sub.3(Al, Ga,
In).sub.5O.sub.12:Ce.sup.3+, SrGa.sub.2S.sub.4:Eu.sup.2+,
SrS:Eu.sup.2+, and colloidal quantum dot thin films comprising
CdTe, ZnS, ZnSe, ZnTe, CdSe, or CdTe..Iaddend.
.Iadd.53. The light emitting device of claim 51 further comprising
a phosphor capable of emitting substantially red light, wherein the
phosphor is selected from one or more of the group consisting of
(Gd,Y,Lu,La).sub.2O.sub.3:Eu.sup.3+,
Bi.sup.3+(Gd,Y,Lu,La).sub.2O.sub.2S:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La)VO.sub.4:Eu.sup.3+, Bi.sup.3+; Y.sub.2(O,S).sub.3:
Eu.sup.3+; Ca.sub.1-xMo.sub.1-ySi.sub.yO.sub.4: where
0.05.ltoreq.x.ltoreq.0.5, 0.ltoreq.y.ltoreq.0.1;
(Li,Na,K).sub.5Eu(W,Mo)O.sub.4; SrY.sub.2S.sub.4:Eu.sup.2+;
CaLa.sub.2S.sub.4:Ce.sup.3+; (Ca,Sr)S:Eu.sup.2+;
3.5MgO*0.5MgF.sub.2*GeO.sub.2:Mn.sup.4+ (MFG);
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
(Y,Lu).sub.2WO.sub.6:Eu.sup.3+, Mo.sup.6+;
(Ba,Sr,Ca).sub.3Mg.sub.xSi.sub.2O.sub.8:Eu.sup.2+, Mn.sup.2+,
wherein 1.ltoreq.x.ltoreq.2;
(RE.sub.1-yCe.sub.y)Mg.sub.2-xLi.sub.xSi.sub.3-xPxO.sub.12, where
RE is at least one of Sc, Lu, Gd, Y, and Tb,
0.0001.ltoreq.x.ltoreq.0.1 and 0.001.ltoreq.y.ltoreq.0.1; (Y, Gd,
Lu, La).sub.2-xEu.sub.xW.sub.1-yMo.sub.yO.sub.6, where
0.5.ltoreq.x.ltoreq.1.0, 0.01.ltoreq.y.ltoreq.1.0;
(SrCa).sub.1-xEu.sub.xSi.sub.5N.sub.8, where
0.01.ltoreq.x.ltoreq.0.3; SrZnO.sub.2:Sm.sup.+; M.sub.mO.sub.nX,
wherein M is selected from the group of Sc, Y, a lanthanide, an
alkali earth metal and mixtures thereof; X is a halogen;
1.ltoreq.m.ltoreq.3; and 1.ltoreq.n.ltoreq.4, and wherein the
lanthanide doping level can range from 0.1 to 40% spectral weight
and Eu.sup.3+ activated phosphate or borate phosphors; and mixtures
thereof..Iaddend.
.Iadd.54. The light emitting device of claim 46, wherein the one or
more laser devices comprise at least a violet laser device capable
of emitting electromagnetic radiation at a range from about 380
nanometers to about 440 nanometers and the one or more entities are
capable of emitting substantially white light, the substantially
polarized emission being violet light..Iaddend.
.Iadd.55. The light emitting device of claim 46, wherein the one or
more entities comprise a blend of wavelength converting materials
capable of emitting substantially blue light, substantially green
light, and substantially red light..Iaddend.
.Iadd.56. The light emitting device of claim 55, wherein the blue
emitting phosphor is selected from the group consisting of
(Ba,Sr,Ca).sub.5(PO.sub.4).sub.3(Cl,F,Br,OH):Eu.sup.2+, Mn.sup.2+;
Sb.sup.3+,(Ba,Sr,Ca)MgAl.sub.10O.sub.17:Eu.sup.2+, Mn.sup.2+;
(Ba,Sr,Ca)BPO.sub.5:Eu.sup.2+, Mn.sup.2+;
(Sr,Ca).sub.10(PO.sub.4).sub.6*nB.sub.2O.sub.3:Eu.sup.2+;
2SrO*0.84P.sub.2O5*0.16B.sub.2O.sub.3:Eu.sup.2+;
Sr.sub.2Si.sub.3O.sub.8*2SrCl.sub.2:Eu.sup.2+;
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
Sr.sub.4Al.sub.14O.sub.25:Eu.sup.2+ (SAE);
BaAl.sub.8O.sub.13:Eu.sup.2+; and mixtures thereof..Iaddend.
.Iadd.57. The light emitting device of claim 55, wherein the green
phosphor is selected from the group consisting of
(Ba,Sr,Ca)MgAl.sub.10O.sub.17:Eu.sup.2+, Mn.sup.2+ (BAMn);
(Ba,Sr,Ca)Al.sub.2O.sub.4:Eu.sup.2+;
(Y,Gd,Lu,Sc,La)BO.sub.3:Ce.sup.3+, Tb.sup.3+;
Ca.sub.8Mg(SiO.sub.4).sub.4Cl.sub.2:Eu.sup.2+, Mn.sup.2+;
(Ba,Sr,Ca).sub.2SiO.sub.4:Eu.sup.2+;
(Ba,Sr,Ca).sub.2(Mg,Zn)Si.sub.2O.sub.7:Eu.sup.2+;
(Sr,Ca,Ba)(Al,Ga,ln).sub.2S.sub.4:Eu.sup.2+;
(Y,Gd,Tb,La,Sm,Pr,Lu).sub.3(A1,Ga).sub.5O.sub.12:Ce.sup.3+;
(Ca,Sr).sub.8(Mg,Zn)(SiO.sub.4).sub.4Cl.sub.2:Eu.sup.2+, Mn.sup.2+
(CASI); Na.sub.2Gd.sub.2B.sub.2O.sub.7:Ce.sup.3+, Tb.sup.3+;
(Ba,Sr).sub.2(Ca,Mg,Zn)B.sub.2O.sub.6:K,Ce,Tb; and mixtures
thereof..Iaddend.
.Iadd.58. The light emitting device of claim 55, wherein the red
phosphor is selected from the group consisting of
(Gd,Y,Lu,La).sub.2O.sub.3:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La).sub.2O.sub.2S:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La)VO.sub.4:Eu.sup.3+, Bi.sup.3+; Y.sub.2(O,S).sub.3:
Eu.sup.3+; Ca.sub.1-xMo.sub.1-ySi.sub.yO.sub.4: where
0.05.ltoreq.x.ltoreq.0.5, 0.ltoreq.y.ltoreq.0.1;
(Li,Na,K).sub.5Eu(W,Mo)O.sub.4; SrY.sub.2S.sub.4:Eu.sup.2+;
CaLa.sub.2S.sub.4:Ce.sup.3+; (Ca,Sr)S:Eu.sup.2+
3.5MgO*0.5MgF.sub.2*GeO.sub.2:Mn.sup.4+ (MFG);
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
(Y,Lu).sub.2WO.sub.6:Eu.sup.3+, Mo.sup.6+;
(Ba,Sr,Ca).sub.3Mg.sub.xSi.sub.2O.sub.8:Eu.sup.2+, Mn.sup.2+,
wherein 1.ltoreq.x.ltoreq.2;
(RE.sub.1-yCe.sub.y)Mg.sub.2-xLi.sub.xSi.sub.3-xP.sub.xO.sub.12,
where RE is at least one of Sc, Lu, Gd, Y, and Tb,
0.0001.ltoreq.x.ltoreq.0.1 and 0.001<y<0.1; (Y, Gd, Lu,
La).sub.2-xEu.sub.xW.sub.1-yMo.sub.yO.sub.6, where
0.5.ltoreq.x.ltoreq.1.0, 0.01.ltoreq.y.ltoreq.1.0;
(SrCa).sub.1-xEu.sub.xSi.sub.5N.sub.8, where
0.01.ltoreq.x.ltoreq.0.3; SrZnO.sub.2:Sm.sup.3+; M.sub.mO.sub.nX,
wherein M is selected from the group of Sc, Y, a lanthanide, an
alkali earth metal and mixtures thereof; X is a halogen;
1.ltoreq.m.ltoreq.3; and 1.ltoreq.n.ltoreq.4, and wherein the
lanthanide doping level can range from 0.1 to 40% spectral weight;
and Eu.sup.3+ activated phosphate or borate phosphors; and mixtures
thereof..Iaddend.
.Iadd.59. The light emitting device of claim 46, wherein the one or
more entities being a plurality of wavelength converting entities
are selected from a red emitting wavelength converting material, a
green emitting wavelength converting material, a blue emitting
wavelength converting material, and a yellow emitting wavelength
converting material..Iaddend.
.Iadd.60. The light emitting device of claim 46, wherein the
thickness of the one or more entities is provided by at least one
of electrophoretic deposition, plating, sputtering, spraying,
dipping, and dispensing..Iaddend.
.Iadd.61. The light emitting device of claim 46, wherein the one or
more laser devices comprise two light emitting
devices..Iaddend.
.Iadd.62. The light emitting device of claim 46, wherein the bulk
gallium nitride substrate was formed by slicing from a boule that
was grown by hydride vapor epitaxy or ammonothermally..Iaddend.
.Iadd.63. The light emitting device of claim 46, wherein the
thickness of the one or more entities is formed overlying the one
or more laser devices..Iaddend.
.Iadd.64. The light emitting device of claim 46, further comprising
an enclosure, wherein the enclosure has a shape chosen from among
annular, circular, egg-shaped, trapezoidal, or a combination
thereof..Iaddend.
.Iadd.65. The light emitting device of claim 46, wherein the device
is packaged and is coupled to a rectifier..Iaddend.
.Iadd.66. The light emitting device of claim 46, further comprising
a diffuser, the diffuser comprising at least one of TiO.sub.2,
CaF.sub.2, SiO.sub.2, CaCO.sub.3, and BaSO.sub.4..Iaddend.
.Iadd.67. A light emitting device for an automotive application
comprising: one or more laser devices comprising a semipolar or
nonpolar GaN containing substrate and light emitting layers, the
one or more laser devices emitting substantially polarized emission
of one or more first wavelengths; an optically transparent member
coupled to the one or more laser devices; and a thickness of one or
more entities formed within a vicinity of the optically transparent
member, one or more of the entities being excited by the
substantially polarized emission to emit electromagnetic radiation
at one or more second wavelengths such that said light emitting
device emits polarized and non-polarized light; wherein a
crystallographic orientation of the device substrate is within
.+-.5 degrees of the {1 -1 0 0} m plane, the {1 1 -2 0} a plane,
the {1 1 -2 2} plane, the {2 0 -2.+-.1} plane, the {1 -1 0.+-.1}
plane, the {1 -1 0 .+-.2} plane, or the {1 -1 0.+-.3}
plane..Iaddend.
.Iadd.68. The light emitting device of claim 67, wherein at least
one of the laser devices comprises a quantum well region, the
quantum well region being characterized by an electron wave
function and a hole wave function, the electron wave function and
the hole wave function being substantially overlapped within a
predetermined spatial region of the quantum well
region..Iaddend.
.Iadd.69. The light emitting device of claim 67, wherein the
thickness of the one or more entities is formed overlying a first
side of the optically transparent member, the first side facing the
one or more of the laser devices..Iaddend.
.Iadd.70. The light emitting device of claim 67, wherein the one or
more laser devices comprise at least a blue laser device, the
substantially polarized emission being blue light..Iaddend.
.Iadd.71. The light emitting device of claim 67, wherein the one or
more laser devices comprise at least a blue laser device capable of
emitting electromagnetic radiation at a wavelength range from about
430 nanometers to about 490 nanometers, the substantially polarized
emission being blue light..Iaddend.
.Iadd.72. The light emitting device of claim 67, wherein the one or
more laser devices comprise at least a blue laser device capable of
emitting electromagnetic radiation at a range from about 430
nanometers to about 490 nanometers and the one or more entities is
capable of emitting substantially yellow light, the substantially
polarized emission being blue light..Iaddend.
.Iadd.73. The light emitting device of claim 72, wherein the one or
more entities comprises a phosphor or phosphor blend selected from
one or more of (Y, Gd, Tb, Sc, Lu, La).sub.3(Al, Ga,
In).sub.5O.sub.12:Ce.sup.3+, SrGa.sub.2S.sub.4:Eu.sup.2+,
SrS:Eu.sup.2+, and colloidal quantum dot thin films comprising
CdTe, ZnS, ZnSe, ZnTe, CdSe, or CdTe..Iaddend.
.Iadd.74. The light emitting device of claim 72, further comprising
a phosphor capable of emitting substantially red light, wherein the
phosphor is selected from one or more of the group consisting of
(Gd,Y,Lu,La).sub.2O.sub.3:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La).sub.2O.sub.2S:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La)VO.sub.4:Eu.sup.3+, Bi.sup.3+; Y.sub.2(O,S).sub.3:
Eu.sup.3+; Ca.sub.1-xMo.sub.1-ySi.sub.yO.sub.4: where
0.05.ltoreq.x.ltoreq.0.5, 0.ltoreq.y.ltoreq.0.1;
(Li,Na,K).sub.5Eu(W,Mo)O.sub.4; SrY.sub.2S.sub.4:Eu.sup.2+;
CaLa.sub.2S.sub.4:Ce.sup.3+; (Ca,Sr)S:Eu.sup.2+;
3.5MgO*0.5MgF.sub.2*GeO.sub.2:Mn.sup.4+ (MFG);
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
(Y,Lu).sub.2WO.sub.6:Eu.sup.3+, Mo.sup.6+;
(Ba,Sr,Ca).sub.3Mg.sub.xSi.sub.2O.sub.8:Eu.sup.2+, Mn.sup.2+,
wherein 1.ltoreq.x.ltoreq.2;
(RE.sub.1-yCe.sub.y)Mg.sub.2-xLi.sub.xSi.sub.3,PxO.sub.12, where RE
is at least one of Sc, Lu, Gd, Y, and Tb,
0.0001.ltoreq.x.ltoreq.0.1 and 0.001.ltoreq.y.ltoreq.0.1; (Y, Gd,
Lu, La).sub.2-xEu.sub.xW.sub.1-yMo.sub.yO.sub.6, where
0.5.ltoreq.x.ltoreq.1.0, 0.01.ltoreq.y.ltoreq.1.0;
(SrCa).sub.1-xEu.sub.xSi.sub.5N.sub.8, where
0.01.ltoreq.x.ltoreq.0.3; SrZnO.sub.2:Sm.sup.+3; M.sub.mO.sub.nX,
wherein M is selected from the group of Sc, Y, a lanthanide, an
alkali earth metal and mixtures thereof; X is a halogen;
1.ltoreq.m.ltoreq.3; and 1.ltoreq.n.ltoreq.4, and wherein the
lanthanide doping level can range from 0.1 to 40% spectral weight;
and Eu.sup.3+ activated phosphate or borate phosphors; and mixtures
thereof..Iaddend.
.Iadd.75. The light emitting device of claim 67, wherein the one or
more laser devices comprise at least a violet laser device capable
of emitting electromagnetic radiation at a range from about 380
nanometers to about 440 nanometers and the one or more entities are
capable of emitting substantially white light, the substantially
polarized emission being violet light..Iaddend.
.Iadd.76. The light emitting device of claim 67, wherein the one or
more entities comprise a blend of wavelength converting materials
capable of emitting substantially blue light, substantially green
light, and substantially red light..Iaddend.
.Iadd.77. The light emitting device of claim 76, wherein the blue
emitting phosphor is selected from the group consisting of
(Ba,Sr,Ca).sub.5(PO.sub.4).sub.3(Cl,F,Br,OH):Eu.sup.2+, Mn.sup.2+;
Sb.sup.3+,(Ba,Sr,Ca)MgAl.sub.10O.sub.17:Eu.sup.2+, Mn.sup.2+;
(Ba,Sr,Ca)BPO.sub.5:Eu.sup.2+, Mn.sup.2+;
(Sr,Ca).sub.10(PO.sub.4).sub.6*nB.sub.2O.sub.3:Eu.sup.2+;
2SrO*0.84P.sub.2O5*0.16B.sub.2O.sub.3:Eu.sup.2+;
Sr.sub.2Si.sub.3O.sub.8*2SrCl.sub.2:Eu.sup.2+;
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
Sr.sub.4Al.sub.14O.sub.25:Eu.sup.2+ (SAE);
BaAl.sub.8O.sub.13:Eu.sup.2+; and mixtures thereof..Iaddend.
.Iadd.78. The light emitting device of claim 76, wherein the green
phosphor is selected from the group consisting of
(Ba,Sr,Ca)MgAl.sub.10O.sub.17:Eu.sup.2+, Mn.sup.2+ (BAMn);
(Ba,Sr,Ca)Al.sub.2O.sub.4:Eu.sup.2+;
(Y,Gd,Lu,Sc,La)BO.sub.3:Ce.sup.3+,Tb.sup.3+;
Ca.sub.8Mg(SiO.sub.4).sub.4Cl.sub.2:Eu.sup.2+, Mn.sup.2+;
(Ba,Sr,Ca).sub.2SiO.sub.4:Eu.sup.2+;
(Ba,Sr,Ca).sub.2(Mg,Zn)Si.sub.2O.sub.7:Eu.sup.2+; (Sr,
Ca,Ba)(Al,Ga,ln).sub.2S.sub.4:Eu.sup.2+;
(Y,Gd,Tb,La,Sm,Pr,Lu).sub.3(Al,Ga).sub.5O.sub.12:Ce.sup.3+;
(Ca,Sr).sub.8(Mg,Zn)(SiO.sub.4).sub.4Cl.sub.2:Eu.sup.2+, Mn.sup.2+
(CASI); Na.sub.2Gd.sub.2B.sub.2O.sub.7:Ce.sup.3+, Tb.sup.3+;
(Ba,Sr).sub.2(Ca,Mg,Zn)B.sub.2O.sub.6:K,Ce,Tb; and mixtures
thereof..Iaddend.
.Iadd.79. The light emitting device of claim 76, wherein the red
phosphor is selected from the group consisting of
(Gd,Y,Lu,La).sub.2O.sub.3:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La).sub.2O.sub.2S:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La)VO.sub.4:Eu.sup.3+, Bi.sup.3+; Y.sub.2(O,S).sub.3:
Eu.sup.3+; Ca.sub.1-xMo.sub.1-ySi.sub.yO.sub.4: where
0.05.ltoreq.x.ltoreq.0.5, 0.ltoreq.y.ltoreq.0.1;
(Li,Na,K).sub.5Eu(W,Mo)O.sub.4; (Ca,Sr)S:Eu.sup.2+;
SrY.sub.2S.sub.4:Eu.sup.2+; CaLa.sub.2S.sub.4:Ce.sup.3+;
3.5MgO*0.5MgF.sub.2*GeO.sub.2:Mn.sup.4+ (MFG);
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
(Y,Lu).sub.2WO.sub.6:Eu.sup.3+, Mo.sup.6+;
(Ba,Sr,Ca).sub.3Mg.sub.xSi.sub.2O.sub.8:Eu.sup.2+, Mn.sup.2+,
wherein 1.ltoreq.x.ltoreq.2;
(RE.sub.1-yCe.sub.y)Mg.sub.2-xLi.sub.xSi.sub.3-xP.sub.xO.sub.12,
where RE is at least one of Sc, Lu, Gd, Y, and Tb,
0.0001.ltoreq.x.ltoreq.0.1 and 0.001.ltoreq.y.ltoreq.0.1; (Y, Gd,
Lu, La).sub.2-xEu.sub.xW.sub.1-yMo.sub.yO.sub.6, where
0.5.ltoreq.x.ltoreq.1.0, 0.01.ltoreq.y.ltoreq.1.0;
(SrCa).sub.1-xEu.sub.xSi.sub.5N.sub.8, where
0.01.ltoreq.x.ltoreq.0.3; SrZnO.sub.2:Sm.sup.+; M.sub.mO.sub.nX,
wherein M is selected from the group of Sc, Y, a lanthanide, an
alkali earth metal and mixtures thereof; X is a halogen;
1.ltoreq.m.ltoreq.3; and 1.ltoreq.n.ltoreq.4, and wherein the
lanthanide doping level can range from 0.1 to 40%
spectral..Iaddend.
.Iadd.80. The light emitting device of claim 67, wherein the one or
more entities being a plurality of wavelength converting entities
are selected from a red emitting wavelength converting material, a
green emitting wavelength converting material, a blue emitting
wavelength converting material, and a yellow emitting wavelength
converting material..Iaddend.
.Iadd.81. The light emitting device of claim 67, wherein the
thickness of the one or more entities is provided by at least one
of electrophoretic deposition, plating, sputtering, spraying,
dipping, and dispensing..Iaddend.
.Iadd.82. The light emitting device of claim 67, wherein the one or
more laser devices comprise two light emitting
devices..Iaddend.
.Iadd.83. The light emitting device of claim 67, wherein the bulk
gallium nitride substrate was formed by slicing from a boule that
was grown by hydride vapor epitaxy or ammonothermally..Iaddend.
.Iadd.84. The light emitting device of claim 67, wherein the
thickness of the one or more entities is formed overlying the one
or more laser devices..Iaddend.
.Iadd.85. The light emitting device of claim 67, further comprising
an enclosure, wherein the enclosure has a shape chosen from among
annular, circular, egg-shaped, trapezoidal, or a combination
thereof..Iaddend.
.Iadd.86. The light emitting device of claim 67, wherein the device
is packaged and is coupled to a rectifier..Iaddend.
.Iadd.87. The light emitting device of claim 67, further comprising
a diffuser, the diffuser comprising at least one of TiO.sub.2,
CaF.sub.2, SiO.sub.2, CaCO.sub.3, and BaSO.sub.4..Iaddend.
.Iadd.88. A light emitting device for an automotive application
comprising: a substrate member having a first surface; at least one
laser device overlying the first surface emitting a substantially
polarized emission of first wavelengths, the laser device
comprising a semipolar or nonpolar bulk gallium nitride substrate
and light emitting layers; an optically transparent member coupled
to the at least one laser device; and a blend of phosphors, the
phosphors being excited by the substantially polarized emission of
first wavelengths to thereby emit electromagnetic radiation at
second wavelengths such that said light emitting device emits
polarized and non-polarized light; wherein the substantially
polarized emission of first wavelengths comprises blue light and
the phosphor blend emits electromagnetic radiation at second
wavelengths comprising yellow and red..Iaddend.
.Iadd.89. A light emitting device for an automotive application
comprising: a substrate member having a first surface; at least one
laser device having a layer fabricated overlying the first surface
emitting a substantially polarized emission of first wavelengths,
the at least one laser device comprising a semipolar or nonpolar
bulk gallium nitride substrate; an optically transparent member
coupled to the at least one laser device; and a blend of phosphors,
the phosphors being excited by the substantially polarized emission
of first wavelengths to thereby emit electromagnetic radiation at
second wavelengths such that said light emitting device emits
polarized and non-polarized light; wherein the substantially
polarized emission of first wavelengths comprises violet light and
the phosphor blend emits electromagnetic radiation at second
wavelengths comprising blue, green, and red; and wherein the light
emitting device is configured for connection to an automotive
device..Iaddend.
.Iadd.90. A light emitting device for an automotive application
comprising: a substrate member having a first surface; at least one
laser device overlying the first surface emitting a substantially
polarized emission of first wavelengths, the at least one laser
device comprising a semipolar or nonpolar bulk gallium nitride
substrate; an optically transparent member coupled to the at least
one laser device; and a blend of phosphors, the phosphors being
excited by the substantially polarized emission of first
wavelengths to thereby emit electromagnetic radiation at second
wavelengths such that said light emitting device emits polarized
and non-polarized light; wherein the substantially polarized
emission of first wavelengths comprises blue light and the phosphor
blend emits electromagnetic radiation at second wavelengths
comprising green and red; and wherein the light emitting device is
configured for an automotive application..Iaddend.
.Iadd.91. A light source comprising: a substrate member comprising
a first surface region; one or more laser diode devices overlying
the first surface region, the one or more laser diode devices
comprising a semipolar or nonpolar GaN containing substrate and
light emitting layers, the one or more laser diode devices emitting
substantially polarized emission of one or more first wavelengths;
an optically transparent member coupled to the one or more laser
diode devices; and a thickness of one or more entities formed
within a vicinity of the optically transparent member, one or more
of the entities being excited by the substantially polarized
emission to emit electromagnetic radiation at one or more second
wavelengths such that said light emitting device emits polarized
and non-polarized light; wherein the bulk gallium nitride substrate
has a dislocation density in the plane of the large-area surface
that is less than 5.times.10.sup.6 cm.sup.-2..Iaddend.
.Iadd.92. The light emitting device of claim 1, further comprising
an optical path provided between the one or more light emitting
diode devices and the optically transparent member..Iaddend.
.Iadd.93. The light emitting device of claim 1, wherein said
substrate and said layers are configured to emit polarized
light..Iaddend.
Description
BACKGROUND OF THE INVENTION
The present invention relates generally to lighting techniques.
More specifically, embodiments of the invention include techniques
for combining colored LED devices, such as violet, blue, blue and
yellow, or blue and green, fabricated on bulk semipolar or nonpolar
materials with use of entities such as phosphors, which emit light.
Merely by way of example, the invention can be applied to
applications such as white lighting, multi-colored lighting,
general illumination, decorative lighting, automotive and aircraft
lamps, street lights, lighting for plant growth, indicator lights,
lighting for flat panel displays, other optoelectronic devices, and
the like.
In the late 1800's, Thomas Edison invented the light bulb. The
conventional light bulb, commonly called the "Edison bulb," has
been used for over one hundred years. The conventional light bulb
uses a tungsten filament enclosed in a glass bulb sealed in a base,
which is screwed into a socket. The socket is coupled to an AC
power or DC power source. The conventional light bulb can be found
commonly in houses, buildings, and outdoor lightings, and other
areas requiring light. Unfortunately, drawbacks exist with the
conventional Edison light bulb. That is, the conventional light
bulb dissipates much thermal energy. More than 90% of the energy
used for the conventional light bulb dissipates as thermal energy.
Additionally, the conventional light bulb routinely fails often due
to thermal expansion and contraction of the filament element.
To overcome some of the drawbacks of the conventional light bulb,
fluorescent lighting has been developed. Fluorescent lighting uses
an optically clear tube structure filled with a halogen gas and,
which typically also contains mercury. A pair of electrodes is
coupled between the halogen gas and couples to an alternating power
source through a ballast. Once the gas has been excited, it
discharges to emit light. Typically, the optically clear tube is
coated with phosphors, which are excited by the light. Many
building structures use fluorescent lighting and, more recently,
fluorescent lighting has been fitted onto a base structure, which
couples into a standard socket.
Solid state lighting techniques have also been used. Solid state
lighting relies upon semiconductor materials to produce light
emitting diodes, commonly called LEDs. At first, red LEDs were
demonstrated and introduced into commerce. Red LEDs use Aluminum
Indium Gallium Phosphide or AlInGaP semiconductor materials. Most
recently, Shuji Nakamura pioneered the use of InGaN materials to
produce LEDs emitting light in the blue color range for blue LEDs.
The blue colored LEDs led to innovations such as solid state white
lighting, the blue laser diode, which in turn enabled the
Blu-Ray.TM. (trademark of the Blu-Ray Disc Association) DVD player,
and other developments. Other colored LEDs have also been
proposed.
High intensity UV, blue, and green LEDs based on GaN have been
proposed and even demonstrated with some success. Efficiencies have
typically been highest in the UV-violet, dropping off as the
emission wavelength increases to blue or green. Unfortunately,
achieving high intensity, high-efficiency GaN-based green LEDs has
been particularly problematic. The performance of optoelectronic
devices fabricated on conventional c-plane GaN suffer from strong
internal polarization fields, which spatially separate the electron
and hole wave functions and lead to poor radiative recombination
efficiency. Since this phenomenon becomes more pronounced in InGaN
layers with increased indium content for increased wavelength
emission, extending the performance of UV or blue GaN-based LEDs to
the blue-green or green regime has been difficult. Furthermore,
since increased indium content films often require reduced growth
temperature, the crystal quality of the InGaN films is degraded.
The difficulty of achieving a high intensity green LED has lead
scientists and engineers to the term "green gap" to describe the
unavailability of such green LED. In addition, the light emission
efficiency of typical GaN-based LEDs drops off significantly at
higher current densities, as are required for general illumination
applications, a phenomenon known as "roll-over." Other limitations
with blue LEDs using c-plane GaN exist. These limitations include
poor yields, low efficiencies, and reliability issues. Although
highly successful, solid state lighting techniques must be improved
for full exploitation of their potential. These and other
limitations may be described throughout the present specification
and more particularly below.
From the above, it is seen that techniques for improving optical
devices is highly desired.
BRIEF SUMMARY OF THE INVENTION
The present invention provides a packaged light emitting device
which includes a substrate member having a surface region. One or
more light emitting diode devices are overlying the surface region.
At least one of the light emitting diode device is fabricated on a
semipolar or nonpolar gallium and nitrogen (e.g., GaN) containing
substrate. The light emitting diode devices are fabricated on the
semipolar or nonpolar gallium and nitrogen (e.g., GaN) containing
substrate and emit substantially polarized emission of first
wavelengths. In a specific embodiment, the device also has an
optically transparent member coupled to the light emitting diode
devices. An optical path is provided between the light emitting
diode devices and the optically transparent member. In a specific
embodiment, the phosphors are formed near or overlying the
optically transparent member. Alternatively, the phosphors are
formed within the optically transparent member or underlying the
optically transparent member or any combination of these
configurations. The entities are excited by the substantially
polarized emission, which is direct or reflected or a combination
to emit electromagnetic radiation second wavelengths.
In a specific embodiment, the present invention includes device
configurations having different spatial locations for the thickness
of the entities. The thickness of the entities is formed within the
optically transparent member. Alternatively, the thickness of the
entities is formed underlying the optically transparent member
according to a specific embodiment. In yet an alternative specific
embodiment, the thickness of the entities is formed within a
spatial region of the light path between the light emitting diode
devices and the optically transparent member.
In yet an alternative specific embodiment, the present invention
provides a packaged light emitting device. The device includes a
substrate member having a surface region and light emitting diode
devices overlying the surface region. At least one of the light
emitting diode device is fabricated on a semipolar or nonpolar
gallium and nitrogen (e.g., GaN) containing substrate. The light
emitting diode devices are fabricated on the semipolar or nonpolar
gallium and nitrogen (e.g., GaN) containing substrate and emit
substantially polarized emission of first wavelengths. At least one
of the light emitting diode devices comprises a quantum well
region, which is characterized by an electron wave function and a
hole wave function. In a specific embodiment, the electron wave
function and the hole wave function are substantially overlapped
within a predetermined spatial region of the quantum well region.
The device has a thickness of entities formed overlying the light
emitting diode devices. The entities are excited by the
substantially polarized emission to emit electromagnetic radiation
of second wavelengths.
Still further, the present invention provides a packaged light
emitting device. The device includes a substrate member having a
surface region. The device includes light emitting diode devices
overlying the surface region. At least one of the light emitting
diode device is fabricated on a semipolar or nonpolar gallium and
nitrogen (e.g., GaN) containing substrate and emit substantially
polarized emissions of first wavelengths. At least one of the light
emitting diode devices includes a quantum well region, which is
characterized by an electron wave function and a hole wave. The
electron wave function and the hole wave function are substantially
overlapped within a predetermined spatial region of the quantum
well region. The device also has a thickness of entities operably
coupled to the light emitting diode devices. In a specific
embodiment, the entities are excited by the substantially polarized
emission and emit electromagnetic radiation of second wavelengths.
Depending upon the embodiment, the entities are formed overlying
the light emitting diode devices, or within a vicinity of the light
emitting devices. The electromagnetic radiation is characterized by
reflected emission, direct emission, or a combination of reflected
and direct emission.
In yet an alternative embodiment, the present invention provides a
method of assembling a light emitting device. The method includes
providing a substrate member comprising a surface region. The
method also includes providing light emitting diode devices
overlying the surface region. At least one of the light emitting
diode device is fabricated on a semipolar or nonpolar gallium and
nitrogen containing substrate. The light emitting diode devices are
fabricated on the semipolar or nonpolar gallium and nitrogen
containing substrate and emit substantially polarized emission of
first wavelengths. At least one of the light emitting diode devices
comprises a quantum well region, which is characterized by an
electron wave function and a hole wave function. The electron wave
function and the hole wave function are substantially overlapped
within a predetermined spatial region of the quantum well region.
The method includes coupling a thickness of entities to the light
emitting diode devices. The entities are excited by the
substantially polarized emission, and emit electromagnetic
radiation of second wavelengths.
The present device and method provides for an improved lighting
technique with improved efficiencies. The present method and
resulting structure are easier to implement using conventional
technologies. In some embodiments, the present device and method
provide a mix of polarized and unpolarized light that are useful in
displays and in conjunction with polarizing transmission filters.
In a specific embodiment, the blue LED device is capable of
emitting electromagnetic radiation at a wavelength range from about
450 nanometers to about 495 nanometers, and the yellow-green LED
device is capable of emitting electromagnetic radiation at a
wavelength range from about 495 nanometers to about 590 nanometers,
although there can also be some variations.
A further understanding of the nature and advantages of the present
invention may be realized by reference to the latter portions of
the specification and attached drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a simplified diagram of a packaged light emitting device
using a recessed configuration according to an embodiment of the
present invention;
FIG. 1A illustrates an electron/hole wave functions according to an
embodiment of the present invention;
FIGS. 2 through 5 illustrate a simplified method of assembling the
light emitting device of FIG. 1 according to an embodiment of the
present invention;
FIG. 6 is a simplified diagram of an alternative packaged light
emitting device using multiple devices according to an embodiment
of the present invention;
FIGS. 7 through 10 illustrate a simplified method of assembling the
light emitting device of FIG. 6 according to an embodiment of the
present invention;
FIG. 11 is a simplified diagram of yet an alternative packaged
light emitting device using an optical path to a plane region
according to an embodiment of the present invention;
FIGS. 12 through 15 illustrate a simplified method of assembling
the light emitting device of FIG. 11 according to an embodiment of
the present invention;
FIG. 16 is a simplified diagram of a yet an alternative packaged
light emitting device using an optical path to a plane region and
filler material according to an embodiment of the present
invention;
FIGS. 17 through 20 illustrate a simplified method of assembling
the light emitting device of FIG. 16 according to an embodiment of
the present invention;
FIG. 21 is a simplified diagram of a yet an alternative packaged
light emitting device using an optical path to a plane region
according to an embodiment of the present invention; and
FIG. 22 is a simplified diagram of a yet an alternative packaged
light emitting device using an optical path to a plane region
according to an embodiment of the present invention.
DETAILED DESCRIPTION OF THE INVENTION
Recent breakthroughs in the field of GaN-based optoelectronics have
demonstrated the great potential of devices fabricated on bulk
nonpolar and semipolar GaN substrates. The lack of strong
polarization induced electric fields that plague conventional
devices on c-plane GaN leads to a greatly enhanced radiative
recombination efficiency in the light emitting InGaN layers.
Furthermore, the nature of the electronic band structure and the
anisotropic in-plane strain leads to highly polarized light
emission, which will offer several advantages in applications such
as display backlighting.
Of particular importance to the field of lighting is the progress
of light emitting diodes (LED) fabricated on nonpolar and semipolar
GaN substrates. Such devices making use of InGaN light emitting
layers have exhibited record output powers at extended operation
wavelengths into the violet region (390-430 nm), the blue region
(430-490 nm), the green region (490-560 nm), and the yellow region
(560-600 nm). For example, a violet LED, with a peak emission
wavelength of 402 nm, was recently fabricated on an m-plane (1-100)
GaN substrate and demonstrated greater than 45% external quantum
efficiency, despite having no light extraction enhancement
features, and showed excellent performance at high current
densities, with minimal roll-over [K.-C. Kim, M. C. Schmidt, H.
Sato, F. Wu, N. Fellows, M. Saito, K. Fujito, J. S. Speck, S,
Nakamura, and S. P. DenBaars, "Improved electroluminescence on
nonpolar m-plane InGaN/GaN quantum well LEDs", Phys. Stat. Sol.
(RRL) 1, No. 3, 125 (2007).]. Similarly, a blue LED, with a peak
emission wavelength of 468 nm, exhibited excellent efficiency at
high power densities and significantly less roll-over than is
typically observed with c-plane LEDs [K. Iso, H. Yamada, H.
Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J. S.
Speck, and S, Nakamura, "High brightness blue InGaN/GaN light
emitting diode on nonpolar m-plane bulk GaN substrate", Japanese
Journal of Applied Physics 46, L960 (2007).]. Two promising
semipolar orientations are the (10-1-1) and (11-22) planes. These
planes are inclined by 62.0 degrees and by 58.4 degrees,
respectively, with respect to the c-plane. University of
California, Santa Barbara (UCSB) has produced highly efficient LEDs
on (10-1-1) GaN with over 65 mW output power at 100 mA for
blue-emitting devices [H. Zhong, A. Tyagi, N. Fellows, F. Wu, R. B.
Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S,
Nakamura, "High power and high efficiency blue light emitting diode
on freestanding semipolar (1011) bulk GaN substrate", Applied
Physics Letters 90, 233504 (2007)] and on (11-22) GaN with over 35
mW output power at 100 mA for blue-green emitting devices [H.
Zhong, A. Tyagi, N. N. Fellows, R. B. Chung, M. Saito, K. Fujito,
J. S. Speck, S. P. DenBaars, and S, Nakamura, Electronics Lett. 43,
825 (2007)], over 15 mW of power at 100 mA for green-emitting
devices [H. Sato, A. Tyagi, H. Zhong, N. Fellows, R. B. Chung, M.
Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S, Nakamura,
"High power and high efficiency green light emitting diode on
free-standing semipolar (1122) bulk GaN substrate", Physical Status
Solidi--Rapid Research Letters 1, 162 (2007)] and over 15 mW for
yellow devices [H. Sato, R. B. Chung, H. Hirasawa, N. Fellows, H.
Masui, F. Wu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and
S, Nakamura, "Optical properties of yellow light-emitting diodes
grown on semipolar (1122) bulk GaN substrates," Applied Physics
Letters 92, 221110 (2008).]. The UCSB group has shown that the
indium incorporation on semipolar (11-22) GaN is comparable to or
greater than that of c-plane GaN, which provides further promise
for achieving high crystal quality extended wavelength emitting
InGaN layers.
With high-performance single-color non-polar and semi-polar LEDs,
several types of white light sources are now possible. In one
embodiment, a violet non-polar or semi-polar LED is packaged
together with at least one phosphor. In a preferred embodiment, the
phosphor comprises a blend of three phosphors, emitting in the
blue, the green, and the red. In another embodiment, a blue
non-polar or semi-polar LED is packaged together with at least one
phosphor. In a preferred embodiment, the phosphor comprises a blend
of two phosphors, emitting in the green and the red. In still
another embodiment, a green or yellow non-polar or semi-polar LED
is packaged together with a blue LED and at least one phosphor. In
a preferred embodiment, the phosphor emits in the red. In a
preferred embodiment, the blue LED constitutes a blue non-polar or
semi-polar LED.
A non-polar or semi-polar LED may be fabricated on a bulk gallium
nitride substrate. The gallium nitride substrate may be sliced from
a boule that was grown by hydride vapor phase epitaxy or
ammonothermally, according to methods known in the art. In one
specific embodiment, the gallium nitride substrate is fabricated by
a combination of hydride vapor phase epitaxy and ammonothermal
growth, as disclosed in U.S. Patent Application .Iadd.Publication
.Iaddend.No. .[.61/078,704.]. .Iadd.US 2010/0003492 A1.Iaddend.,
commonly assigned, and hereby incorporated by reference herein. The
boule may be grown in the c-direction, the m-direction, the
a-direction, or in a semi-polar direction on a single-crystal seed
crystal. Semipolar planes may be designated by (hkil) Miller
indices, where i=-(h+k), l is nonzero and at least one of h and k
are nonzero. The gallium nitride substrate may be cut, lapped,
polished, and chemical-mechanically polished. The gallium nitride
substrate orientation may be within .+-.5 degrees, .+-.2 degrees,
.+-.1 degree, or .+-.0.5 degrees of the {1 -1 0 0} m plane, the {1
1 -2 0} a plane, the {1 1 -2 2} plane, the {2 0 -2.+-.1} plane, the
{1 -1 0.+-.1} plane, the {1 -1 0 -.+-.2} plane, or the {1 -1
0.+-.3} plane. The gallium nitride substrate may have a dislocation
density in the plane of the large-area surface that can be less
than 10.sup.6 cm.sup.-2 and is usually less than 10.sup.3
cm.sup.-2. The gallium nitride substrate may have a dislocation
density in the c plane that can be less than 10.sup.6 cm.sup.-2 and
is preferably less than 10.sup.3 cm.sup.-2.
A homoepitaxial non-polar or semi-polar LED is fabricated on the
gallium nitride substrate according to methods that are known in
the art, for example, following the method disclosed in U.S. Pat.
No. 7,053,413, which is hereby incorporated by reference in its
entirety. At least one Al.sub.xIn.sub.yGa.sub.1-x-yN layer, where
0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and
0.ltoreq.x+y.ltoreq.1, is deposited on the substrate, for example,
following the methods disclosed by U.S. Pat. Nos. 7,338,828 and
7,220,324, which are hereby incorporated by reference in their
entirety. The at least one Al.sub.xIn.sub.yGa.sub.1-x-yN layer may
be deposited by metal-organic chemical vapor deposition, by
molecular beam epitaxy, by hydride vapor phase epitaxy, or by a
combination thereof. In one embodiment, the
Al.sub.xIn.sub.yGa.sub.1-x-yN layer comprises an active layer that
preferentially emits light when an electrical current is passed
through it. In one specific embodiment, the active layer comprises
a single quantum well, with a thickness between about 0.5 nm and
about 40 nm. In a specific embodiment, the active layer comprises a
single quantum well with a thickness between about 1 nm and about 5
nm. In other embodiments, the active layer comprises a single
quantum well with a thickness between about 5 nm and about 10 nm,
between about 10 nm and about 15 nm, between about 15 nm and about
20 nm, between about 20 nm and about 25 nm, between about 25 nm and
about 30 nm, between about 30 nm and about 35 nm, or between about
35 nm and about 40 nm. In another set of embodiments, the active
layer comprises a multiple quantum well. In still another
embodiment, the active region comprises a double heterostructure,
with a thickness between about 40 nm and about 500 nm. In one
specific embodiment, the active layer comprises an
In.sub.yGa.sub.1-yN layer, where 0.ltoreq.y.ltoreq.1.
In a specific embodiment, the present invention provides novel
packages and devices including at least one non-polar or at least
one semi-polar homoepitaxial LED placed on a substrate. The present
packages and devices are combined with phosphors to discharge white
light.
FIG. 1 is a simplified diagram of a packaged light emitting device
100 using a recessed configuration according to an embodiment of
the present invention. In a specific embodiment, the present
invention provides a packaged light emitting device 100. As shown,
the device has a substrate member having a surface region made of a
suitable material such a metal including, but not limited to, Alloy
42, copper, plastics, dielectrics, and the like. The substrate is
generally a lead frame member such as metal alloy.
The substrate, which holds the LED, can come in various shapes,
sizes, and configurations. In a specific embodiment, the surface
region of substrate 101 is cupped. Alternatively, the surface
region 101 is recessed. The surface region generally comprises a
smooth surface, plating, or coating. Such plating or coating can be
gold, silver, platinum, aluminum, or any pure or alloy material,
which is suitable for bonding to an overlying semiconductor
material, but can be others.
Referring again to FIG. 1, the device has light emitting diode
devices overlying the surface region. At least one of the light
emitting diode devices 103 is fabricated on a semipolar or nonpolar
GaN containing substrate. In a specific embodiment, the device
emits polarized electromagnetic radiation 105. As shown, the light
emitting device is coupled to a first potential, which is attached
to the substrate, and a second potential 109, which is coupled to
wire or lead 111 bonded to a light emitting diode. Preferably at
least one of the light emitting diode devices includes a quantum
well region characterized by an electron wave function and a hole
wave function. The electron wave function and the hole wave
function are substantially overlapped within a predetermined
spatial region of the quantum well region. An example of the
electron wave function and the hole wave function is provided by
FIG. 1A, but can be others.
In a preferred embodiment, the light emitting diode devices
comprise at least a blue LED device which emits substantially
polarized emission is blue light at a range from about 430
nanometers to about 490 nanometers. In a specific embodiment, a {1
-1 0 0} m-plane bulk substrate is provided for the nonpolar blue
LED. In another specific embodiment, a {1 0 -1 -1} semi-polar bulk
substrate is provided for the semipolar blue LED. The substrate has
a flat surface, with a root-mean-square (RMS) roughness of about
0.1 nm, a threading dislocation density less than 5.times.10.sup.6
cm.sup.-2, and a carrier concentration of about 1.times.10.sup.17
cm.sup.-3. Epitaxial layers are deposited on the substrate by
metalorganic chemical vapor deposition (MOCVD) at atmospheric
pressure. The ratio of the flow rate of the group V precursor
(ammonia) to that of the group III precursor (trimethyl gallium,
trimethyl indium, trimethyl aluminum) during growth is between
about 3000 and about 12000. First, a contact layer of n-type
(silicon-doped) GaN is deposited on the substrate, with a thickness
of about 5 microns and a doping level of about 2.times.10.sup.18
cm.sup.-3. Next, an undoped InGaN/GaN multiple quantum well (MQW)
is deposited as the active layer. The MQW superlattice has six
periods, comprising alternating layers of 8 nm of InGaN and 37.5 nm
of GaN as the barrier layers. Next, a 10 nm undoped AlGaN electron
blocking layer is deposited. Finally, a p-type GaN contact layer is
deposited, with a thickness of about 200 nm and a hole
concentration of about 7.times.10.sup.17 cm.sup.-3. Indium tin
oxide (ITO) is e-beam evaporated onto the p-type contact layer as
the p-type contact and rapid-thermal-annealed. LED mesas, with a
size of about 300.times.300 .mu.m.sup.2, are formed by
photolithography and dry etching using a chlorine-based
inductively-coupled plasma (ICP) technique. Ti/Al/Ni/Au is e-beam
evaporated onto the exposed n-GaN layer to form the n-type contact,
Ti/Au is e-beam evaporated onto a portion of the ITO layer to form
a p-contact pad, and the wafer is diced into discrete LED dies.
Electrical contacts are formed by conventional wire bonding. In a
specific embodiment, the present device also has a thickness 115 of
preferably phosphor entities formed overlying light emitting diode
devices. The entities are excited by the substantially polarized
emission and emit electromagnetic radiation of second wavelengths.
In a preferred embodiment, the emit substantially yellow light from
an interaction with the substantially polarized emission of blue
light. Preferably the entities are phosphor entities about five
microns or less thick.
In a specific embodiment, the entities comprises a phosphor or
phosphor blend selected from one or more of (Y, Gd, Tb, Sc, Lu,
La).sub.3(Al, Ga, In).sub.5O.sub.12:Ce.sup.3+,
SrGa.sub.2S.sub.4:Eu.sup.2+, SrS:Eu.sup.2+, and colloidal quantum
dot thin films comprising CdTe, ZnS, ZnSe, ZnTe, CdSe, or CdTe. In
other embodiments, the device may include a phosphor capable of
emitting substantially red light. Such phosphor is selected from
one or more of (Gd,Y,Lu,La).sub.2O.sub.3:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La).sub.2O.sub.2S:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La)VO.sub.4:Eu.sup.3+, Bi.sup.3+;
Y.sub.2(O,S).sub.3:Eu.sup.3+; Ca.sub.1-xMo.sub.1-ySi.sub.yO.sub.4:
where 0.05.ltoreq.x.ltoreq.0.5, 0.ltoreq.y.ltoreq.0.1;
(Li,Na,K).sub.5Eu(W,Mo)O.sub.4; (Ca,Sr)S:Eu.sup.2+;
SrY.sub.2S.sub.4:Eu.sup.2+; CaLa.sub.2S.sub.4:Ce.sup.3+;
(Ca,Sr)S:Eu.sup.2+; 3.5MgO*0.5MgF.sub.2*GeO.sub.2:Mn.sup.4+ (MFG);
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
(Y,Lu).sub.2WO.sub.6:Eu.sup.3+, Mo.sup.6+;
(Ba,Sr,Ca).sub.3Mg.sub.xSi.sub.2O.sub.8:Eu.sup.2+, Mn.sup.2+,
wherein 1<x.ltoreq.2;
(RE.sub.1-yCe.sub.y)Mg.sub.2-xLi.sub.xSi.sub.3-xPxO.sub.12, where
RE is at least one of Sc, Lu, Gd, Y, and Tb, 0.0001<x<0.1 and
0.001<y<0.1; (Y, Gd, Lu,
La).sub.2-xEu.sub.xW.sub.1-yMo.sub.yO.sub.6, where
0.5.ltoreq.x.ltoreq.1.0, 0.01.ltoreq.y.ltoreq.1.0;
(SrCa).sub.1-xEu.sub.xSi.sub.5N.sub.8, where
0.01.ltoreq.x.ltoreq.0.3; SrZnO.sub.2:Sm.sup.+3; M.sub.mO.sub.nX
wherein M is selected from the group of Sc, Y, a lanthanide, an
alkali earth metal and mixtures thereof; X is a halogen;
1.ltoreq.m.ltoreq.3; and 1.ltoreq.n.ltoreq.4, and wherein the
lanthanide doping level can range from 0.1 to 40% spectral weight;
and Eu.sup.3+ activated phosphate or borate phosphors; and mixtures
thereof.
In a specific embodiment, the light emitting diode device includes
at least a violet LED device capable of emitting electromagnetic
radiation at a range from about 380 nanometers to about 440
nanometers and the one or more entities are capable of emitting
substantially white light, the substantially polarized emission
being violet light. In a specific embodiment, a (1 -1 0 0) m-plane
bulk substrate is provided for the nonpolar violet LED. The
substrate has a flat surface, with a root-mean-square (RMS)
roughness of about 0.1 nm, a threading dislocation density less
than 5.times.10.sup.6 cm.sup.-2, and a carrier concentration of
about 1.times.10.sup.17 cm.sup.-3. Epitaxial layers are deposited
on the substrate by metalorganic chemical vapor deposition (MOCVD)
at atmospheric pressure. The ratio of the flow rate of the group V
precursor (ammonia) to that of the group III precursor (trimethyl
gallium, trimethyl indium, trimethyl aluminum) during growth is
between about 3000 and about 12000. First, a contact layer of
n-type (silicon-doped) GaN is deposited on the substrate, with a
thickness of about 5 microns and a doping level of about
2.times.10.sup.18 cm.sup.-3. Next, an undoped InGaN/GaN multiple
quantum well (MQW) is deposited as the active layer. The MQW
superlattice has six periods, comprising alternating layers of 16
nm of InGaN and 18 nm of GaN as the barrier layers. Next, a 10 nm
undoped AlGaN electron blocking layer is deposited. Finally, a
p-type GaN contact layer is deposited, with a thickness of about
160 nm and a hole concentration of about 7.times.10.sup.17
cm.sup.-3. Indium tin oxide (ITO) is e-beam evaporated onto the
p-type contact layer as the p-type contact and
rapid-thermal-annealed. LED mesas, with a size of about
300.times.300 .mu.m.sup.2, are formed by photolithography and dry
etching. Ti/Al/Ni/Au is e-beam evaporated onto the exposed n-GaN
layer to form the n-type contact, Ti/Au is e-beam evaporated onto a
portion of the ITO layer to form a contact pad, and the wafer is
diced into discrete LED dies. Electrical contacts are formed by
conventional wire bonding. Other colored LEDs may also be used or
combined according to a specific embodiment.
In a specific embodiment, a (1 1 -2 2} bulk substrate is provided
for a semipolar green LED. The substrate has a flat surface, with a
root-mean-square (RMS) roughness of about 0.1 nm, a threading
dislocation density less than 5.times.10.sup.6 cm.sup.-2, and a
carrier concentration of about 1.times.10.sup.17 cm.sup.-3.
Epitaxial layers are deposited on the substrate by metalorganic
chemical vapor deposition (MOCVD) at atmospheric pressure. The
ratio of the flow rate of the group V precursor (ammonia) to that
of the group III precursor (trimethyl gallium, trimethyl indium,
trimethyl aluminum) during growth between about 3000 and about
12000. First, a contact layer of n-type (silicon-doped) GaN is
deposited on the substrate, with a thickness of about 1 micron and
a doping level of about 2.times.10.sup.18 cm.sup.-3. Next, an
InGaN/GaN multiple quantum well (MQW) is deposited as the active
layer. The MQW superlattice has six periods, comprising alternating
layers of 4 nm of InGaN and 20 nm of Si-doped GaN as the barrier
layers and ending with an undoped 16 nm GaN barrier layer and a 10
nm undoped Al.sub.0.15Ga.sub.0.85N electron blocking layer.
Finally, a p-type GaN contact layer is deposited, with a thickness
of about 200 nm and a hole concentration of about 7.times.10.sup.17
cm.sup.-3. Indium tin oxide (ITO) is e-beam evaporated onto the
p-type contact layer as the p-type contact and
rapid-thermal-annealed. LED mesas, with a size of about
200.times.550 .mu.m.sup.2, are formed by photolithography and dry
etching. Ti/Al/Ni/Au is e-beam evaporated onto the exposed n-GaN
layer to form the n-type contact, Ti/Au is e-beam evaporated onto a
portion of the ITO layer to form a contact pad, and the wafer is
diced into discrete LED dies. Electrical contacts are formed by
conventional wire bonding.
In another specific embodiment, a (1 1 -2 2} bulk substrate is
provided for a semipolar yellow LED. The substrate has a flat
surface, with a root-mean-square (RMS) roughness of about 0.1 nm, a
threading dislocation density less than 5.times.10.sup.6 cm.sup.-2,
and a carrier concentration of about 1.times.10.sup.17 cm.sup.-3.
Epitaxial layers are deposited on the substrate by metalorganic
chemical vapor deposition (MOCVD) at atmospheric pressure. The
ratio of the flow rate of the group V precursor (ammonia) to that
of the group III precursor (trimethyl gallium, trimethyl indium,
trimethyl aluminum) during growth between about 3000 and about
12000. First, a contact layer of n-type (silicon-doped) GaN is
deposited on the substrate, with a thickness of about 2 microns and
a doping level of about 2.times.10.sup.18 cm.sup.-3. Next, a single
quantum well (SQW) is deposited as the active layer. The SQW
comprises a 3.5 nm InGaN layer and is terminated by an undoped 16
nm GaN barrier layer and a 7 nm undoped Al.sub.0.15Ga.sub.0.85N
electron blocking layer. Finally, a Mg-doped p-type GaN contact
layer is deposited, with a thickness of about 200 nm and a hole
concentration of about 7.times.10.sup.17 cm.sup.-3. Indium tin
oxide (ITO) is e-beam evaporated onto the p-type contact layer as
the p-type contact and rapid-thermal-annealed. LED mesas, with a
size of about 600.times.450 .mu.m.sup.2, are formed by
photolithography and dry etching. Ti/Al/Ni/Au is e-beam evaporated
onto the exposed n-GaN layer to form the n-type contact, Ti/Au is
e-beam evaporated onto a portion of the ITO layer to form a contact
pad, and the wafer is diced into discrete LED dies. Electrical
contacts are formed by conventional wire bonding.
In a specific embodiment, the one or more entities comprise a blend
of phosphors capable of emitting substantially blue light,
substantially green light, and substantially red light. As an
example, the blue emitting phosphor is selected from the group
consisting of
(Ba,Sr,Ca).sub.5(PO.sub.4).sub.3(Cl,F,Br,OH):Eu.sup.2+, Mn.sup.2+;
Sb.sup.3+,(Ba,Sr,Ca)MgAl.sub.10O.sub.17:Eu.sup.2+, Mn.sup.2+;
(Ba,Sr,Ca)BPO.sub.5:Eu.sup.2+, Mn.sup.2+;
(Sr,Ca).sub.10(PO.sub.4).sub.6*nB.sub.2O.sub.3:Eu.sup.2+;
2SrO*0.84P.sub.2O.sub.5*0.16B.sub.2O.sub.3:Eu.sup.2+;
Sr.sub.2Si.sub.3O.sub.8*2SrCl.sub.2:Eu.sup.2+;
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
Sr.sub.4Al.sub.14O.sub.25:Eu.sup.2+ (SAE);
BaAl.sub.8O.sub.13:Eu.sup.2+; and mixtures thereof. As an example,
the green phosphor is selected from the group consisting of
(Ba,Sr,Ca)MgAl.sub.10O.sub.17:Eu.sup.2+, Mn.sup.2+ (BAMn);
(Ba,Sr,Ca)Al.sub.2O.sub.4:Eu.sup.2+;
(Y,Gd,Lu,Sc,La)BO.sub.3:Ce.sup.3+,Tb.sup.3+;
Ca.sub.8Mg(SiO.sub.4).sub.4Cl.sub.2:Eu.sup.2+, Mn.sup.2+;
(Ba,Sr,Ca).sub.2SiO.sub.4:Eu.sup.2+;
(Ba,Sr,Ca).sub.2(Mg,Zn)Si.sub.2O.sub.7:Eu.sup.2+;
(Sr,Ca,Ba)(Al,Ga,In).sub.2S.sub.4:Eu.sup.2+;
(Y,Gd,Tb,La,Sm,Pr,Lu).sub.3(Al,Ga).sub.5O.sub.12:Ce.sup.3+;
(Ca,Sr).sub.8(Mg,Zn)(SiO.sub.4).sub.4Cl.sub.2:Eu.sup.2+, Mn.sup.2+
(CASI); Na.sub.2Gd.sub.2B.sub.2O.sub.7:Ce.sup.3+, Tb.sup.3+;
(Ba,Sr).sub.2(Ca,Mg,Zn)B.sub.2O.sub.6:K,Ce,Tb; and mixtures
thereof. As an example, the red phosphor is selected from the group
consisting of (Gd,Y,Lu,La).sub.2O.sub.3:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La).sub.2O.sub.2S:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La)VO.sub.4:Eu.sup.3+, Bi.sup.3+;
Y.sub.2(O,S).sub.3:Eu.sup.3+; Ca.sub.1-xMo.sub.1-ySi.sub.yO.sub.4:
where 0.05.ltoreq.x.ltoreq.0.5, 0.ltoreq.y.ltoreq.0.1;
(Li,Na,K).sub.5Eu(W,Mo)O.sub.4; (Ca,Sr)S:Eu.sup.2+;
SrY.sub.2S.sub.4:Eu.sup.2+; CaLa.sub.2S.sub.4:Ce.sup.3+;
(Ca,Sr)S:Eu.sup.2+; 3.5MgO*0.5MgF.sub.2*GeO.sub.2:Mn.sup.4+ (MFG);
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
(Y,Lu).sub.2WO.sub.6:Eu.sup.3+, Mo.sup.6+;
(Ba,Sr,Ca).sub.3Mg.sub.xSi.sub.2O.sub.8:Eu.sup.2+, Mn.sup.2+,
wherein 1<x.ltoreq.2;
(RE.sub.1-yCe.sub.y)Mg.sub.2-xLi.sub.xSi.sub.3-xP.sub.xO.sub.12,
where RE is at least one of Sc, Lu, Gd, Y, and Tb,
0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,
La).sub.2-xEu.sub.xW.sub.1-yMo.sub.yO.sub.6, where
0.5.ltoreq.x.ltoreq.1.0, 0.01.ltoreq.y.ltoreq.1.0;
(SrCa).sub.1-xEu.sub.xSi.sub.5N.sub.8, where
0.01.ltoreq.x.ltoreq.0.3; SrZnO.sub.2:Sm.sup.+3; M.sub.mO.sub.nX,
wherein M is selected from the group of Sc, Y, a lanthanide, an
alkali earth metal and mixtures thereof; X is a halogen;
1.ltoreq.m.ltoreq.3; and 1.ltoreq.n.ltoreq.4, and wherein the
lanthanide doping level can range from 0.1 to 40% spectral weight;
and Eu.sup.3+ activated phosphate or borate phosphors; and mixtures
thereof.
The above has been generally described in terms of entities that
are phosphor materials or phosphor like materials, but it would be
recognized that other "energy-converting luminescent materials",
which may include phosphors, semiconductors, semiconductor
nanoparticles ("quantum dots"), organic luminescent materials, and
the like, and combinations of them, can also be used. More
generally the energy converting luminescent materials can be
wavelength converting material and/or materials.
In a specific embodiment, the present packaged device includes an
enclosure 117. The enclosure can be made of a suitable material
such as an optically transparent plastic, glass, or other
material.Iadd., and thus be an optically transparent
member.Iaddend.. As also shown, the enclosure has a suitable shape
119. The shape can be annular, circular, egg-shaped, trapezoidal,
or a combination of these shapes. Depending upon the embodiment,
the enclosure with suitable shape and material is configured to
facilitate and even optimize transmission of electromagnetic
radiation from the LED device with coating through the surface
region of the enclosure. FIGS. 2 through 5 illustrate a method of
assembling the light emitting device of FIG. 1 according to an
embodiment of the present invention. The method includes providing
a substrate member 101 comprising a surface region. In a specific
embodiment, the substrate is made of a suitable material such a
metal including, but not limited to, Alloy 42, copper, dielectrics,
plastics, or others. In a specific embodiment, the substrate is
generally from a lead frame member such as a metal alloy, but can
be others.
In a specific embodiment, the present substrate, which holds the
LED, can come in various shapes, sizes, and configurations. In a
specific embodiment, the surface region of substrate 101 is cupped.
Alternatively, the surface region 101 is recessed according to a
specific embodiment. Additionally, the surface region is generally
a smooth surface, plating, or coating. Such plating or coating can
be gold, silver, platinum, aluminum, or any pure or alloy material,
which is suitable for bonding to an overlying semiconductor
material, but can be others.
In a specific embodiment, the method includes providing one or more
light emitting diode devices overlying the surface region. At least
one of the light emitting diode devices 103 is fabricated on a
semipolar or nonpolar GaN containing substrate. In a specific
embodiment, the device emits polarized electromagnetic radiation
105. As shown, the light emitting device is coupled to a first
potential, which is attached to the substrate, and a second
potential 109, which is coupled to wire or lead 111 bonded to a
light emitting diode. The light emitting diode device comprises at
least a blue LED device which emits substantially polarized
emission blue light at a range from about 430 nanometers to about
490 nanometers.
In a specific embodiment, the LED device is attached onto the
surface region of the substrate by silver paste, eutectic, gold
eutectic, or other suitable techniques. In a preferred embodiment,
the LED device is attached using die attach methods such as
eutectic bonding of metals such as gold, silver, or platinum, among
others.
Referring now to FIG. 3, the present method includes bonding wiring
.[.115.]. .Iadd.111 .Iaddend.from .[.lead.]. .Iadd.second potential
.Iaddend.109 to a bonding pad on the LED device. In a specific
embodiment, the wire is a suitable material such as gold, aluminum,
or others and is bonded using ultrasonic, megasonic, or
techniques.
Referring now to FIG. 4, the method includes providing a thickness
115 of one or more entities formed overlying the light emitting
diode devices. In a specific embodiment, the entities are excited
by the substantially polarized emission and emit electromagnetic
radiation of second wavelengths. In a preferred embodiment, the
plurality of entities emit substantially yellow light from an
interaction with the substantially polarized emission of blue
light. In a specific embodiment, the thickness of the plurality of
entities, which are phosphor entities, is about five microns or
less.
In a specific embodiment, the entities comprises a phosphor or
phosphor blend selected from one or more of (Y, Gd, Tb, Sc, Lu,
La).sub.3(Al, Ga, In).sub.5O.sub.12:Ce.sup.3+,
SrGa.sub.2S.sub.4:Eu.sup.2+, SrS:Eu.sup.2+, and colloidal quantum
dot thin films comprising CdTe, ZnS, ZnSe, ZnTe, CdSe, or CdTe. In
other embodiments, the device may include a phosphor capable of
emitting substantially red light. Such phosphor is be selected from
(Gd,Y,Lu,La).sub.2O.sub.3:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La).sub.2O.sub.2S:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La)VO.sub.4:Eu.sup.3+, Bi.sup.3+;
Y.sub.2(O,S).sub.3:Eu.sup.3+; Ca.sub.1-xMo.sub.1-ySi.sub.yO.sub.4:
where 0.05.ltoreq.x.ltoreq.0.5, 0.ltoreq.y.ltoreq.0.1;
(Li,Na,K).sub.5Eu(W,Mo)O.sub.4; (Ca,Sr)S:Eu.sup.2+;
SrY.sub.2S.sub.4:Eu.sup.2+; CaLa.sub.2S.sub.4:Ce.sup.3+;
(Ca,Sr)S:Eu.sup.2+; 3.5MgO*0.5MgF.sub.2*GeO.sub.2:Mn.sup.4+ (MFG);
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
(Y,Lu).sub.2WO.sub.6:Eu.sup.3+, Mo.sup.6+;
(Ba,Sr,Ca).sub.3Mg.sub.xSi.sub.2O.sub.8:Eu.sup.2+, Mn.sup.2+,
wherein 1<x.ltoreq.2;
(RE.sub.1-yCe.sub.y)Mg.sub.2-xLi.sub.xSi.sub.3-xP.sub.xO.sub.12,
where RE is at least one of Sc, Lu, Gd, Y, and Tb,
0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,
La).sub.2-xEu.sub.xW.sub.1-yMo.sub.yO.sub.6, where
0.5.ltoreq.x.ltoreq.1.0, 0.01.ltoreq.y.ltoreq.1.0;
(SrCa).sub.1-xEu.sub.xSi.sub.5N.sub.8, where
0.01.ltoreq.x.ltoreq.0.3; SrZnO.sub.2:Sm.sup.+3; M.sub.mO.sub.nX
wherein M is selected from the group of Sc, Y, a lanthanide, an
alkali earth metal and mixtures thereof; X is a halogen;
1.ltoreq.m.ltoreq.3; and 1.ltoreq.n.ltoreq.4, and wherein the
lanthanide doping level can range from 0.1 to 40% spectral weight;
and Eu.sup.3+ activated phosphate or borate phosphors; and mixtures
thereof.
In a specific embodiment, the one or more entities comprise a blend
of phosphors capable of emitting substantially blue light,
substantially green light, and substantially red light. As an
example, the blue emitting phosphor is selected from the group
consisting of
(Ba,Sr,Ca).sub.5(PO.sub.4).sub.3(Cl,F,Br,OH):Eu.sup.2+, Mn.sup.2+;
Sb.sup.3+,(Ba,Sr,Ca)MgAl.sub.10O.sub.17:Eu.sup.2+, Mn.sup.2+;
(Ba,Sr,Ca)BPO.sub.5:Eu.sup.2+, Mn.sup.2+;
(Sr,Ca).sub.10(PO.sub.4).sub.6*nB.sub.2O.sub.3:Eu.sup.2+;
2SrO*0.84P.sub.2O.sub.5*0.16B.sub.2O.sub.3:Eu.sup.2+;
Sr.sub.2Si.sub.3O.sub.8*2SrCl.sub.2:Eu.sup.2+;
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
Sr.sub.4Al.sub.14O.sub.25:Eu.sup.2+ (SAE);
BaAl.sub.8O.sub.13:Eu.sup.2+; and mixtures thereof. As an example,
the green phosphor is selected from the group consisting of
(Ba,Sr,Ca)MgAl.sub.10O.sub.17:Eu.sup.2+, Mn.sup.2+ (BAMn);
(Ba,Sr,Ca)Al.sub.2O.sub.4:Eu.sup.2+;
(Y,Gd,Lu,Sc,La)BO.sub.3:Ce.sup.3+,Tb.sup.3+;
Ca.sub.8Mg(SiO.sub.4).sub.4Cl.sub.2:Eu.sup.2+, Mn.sup.2+;
(Ba,Sr,Ca).sub.2SiO.sub.4:Eu.sup.2+;
(Ba,Sr,Ca).sub.2(Mg,Zn)Si.sub.2O.sub.7:Eu.sup.2+;
(Sr,Ca,Ba)(Al,Ga,In).sub.2S.sub.4:Eu.sup.2+;
(Y,Gd,Tb,La,Sm,Pr,Lu).sub.3(Al,Ga).sub.5O.sub.12:Ce.sup.3+;
(Ca,Sr).sub.8(Mg,Zn)(SiO.sub.4).sub.4Cl.sub.2:Eu.sup.2+, Mn.sup.2+
(CASI); Na.sub.2Gd.sub.2B.sub.2O.sub.7:Ce.sup.3+, Tb.sup.3+;
(Ba,Sr).sub.2(Ca,Mg,Zn)B.sub.2O.sub.6:K,Ce,Tb; and mixtures
thereof. As an example, the red phosphor is selected from the group
consisting of (Gd,Y,Lu,La).sub.2O.sub.3:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La).sub.2O.sub.2S:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La)VO.sub.4:Eu.sup.3+, Bi.sup.3+;
Y.sub.2(O,S).sub.3:Eu.sup.3+; Ca.sub.1-xMo.sub.1-ySi.sub.yO.sub.4:
where 0.05.ltoreq.x.ltoreq.0.5, 0.ltoreq.y.ltoreq.0.1;
(Li,Na,K).sub.5Eu(W,Mo)O.sub.4; (Ca,Sr)S:Eu.sup.2+;
SrY.sub.2S.sub.4:Eu.sup.2+; CaLa.sub.2S.sub.4:Ce.sup.3+;
(Ca,Sr)S:Eu.sup.2+; 3.5MgO*0.5MgF.sub.2*GeO.sub.2:Mn.sup.4+ (MFG);
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
(Y,Lu).sub.2WO.sub.6:Eu.sup.3+, Mo.sup.6+;
(Ba,Sr,Ca).sub.3Mg.sub.xSi.sub.2O.sub.8:Eu.sup.2+, Mn.sup.2+,
wherein 1<x.ltoreq.2;
(RE.sub.1-yCe.sub.y)Mg.sub.2-xLi.sub.xSi.sub.3-xP.sub.xO.sub.12,
where RE is at least one of Sc, Lu, Gd, Y, and Tb,
0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,
La).sub.2-xEu.sub.xW.sub.1-yMo.sub.yO.sub.6, where
0.5.ltoreq.x.ltoreq.1.0, 0.01.ltoreq.y.ltoreq.1.0;
(SrCa).sub.1-xEu.sub.xSi.sub.5N.sub.8, where
0.01.ltoreq.x.ltoreq.0.3; SrZnO.sub.2:Sm.sup.+3; M.sub.mO.sub.nX,
wherein M is selected from the group of Sc, Y, a lanthanide, an
alkali earth metal and mixtures thereof; X is a halogen;
1.ltoreq.m.ltoreq.3; and 1.ltoreq.n.ltoreq.4, and wherein the
lanthanide doping level can range from 0.1 to 40% spectral weight;
and Eu.sup.3+ activated phosphate or borate phosphors; and mixtures
thereof.
In a specific embodiment, the entities are coated onto the surface
region of the LED device using a suitable technique. Such technique
can include deposition, spraying, plating, coating, spin coating,
electrophoretic deposition, sputtering, dipping, dispensing,
sedimentation, ink jet printing, and screen printing. The
deposition can use an electrostatic technique to provide for
uniformity and a high quality coating. In a specific embodiment,
the entities have a uniformity between about 10 percent and about
0.1 percent. In some embodiments, the entities are coated onto the
surface region of the LED device prior to its separation from a
wafer into discrete dies.
In a specific embodiment, the present method includes providing an
enclosure 117 overlying the LED device, which has been mounted,
bonded, and coated. The enclosure can be made of a suitable
material such as an optically transparent plastic, glass, or other
material. As also shown, the enclosure has a suitable shape 119.
The shape can be annular, circular, egg-shaped, trapezoidal, or a
combination of these shapes. Depending upon the embodiment, the
enclosure is configured to facilitate and even optimize
transmission of electromagnetic radiation from the LED device with
coating through the surface region of the enclosure. FIG. 6 is a
simplified diagram of an alternative packaged light emitting device
600 using multiple devices according to an embodiment of the
present invention. In a specific embodiment, the present invention
provides a packaged light emitting device 600 which has a substrate
member with a surface region. In a specific embodiment, the
substrate is made of a suitable material such a metal including,
but not limited to, Alloy 42, copper, or others, including
dielectrics and even plastics. In a specific embodiment, the
substrate is generally from a lead frame member such as metal
alloy.
The substrate, which holds the LED, can come in various shapes,
sizes, and configurations. In a specific embodiment, the surface
region of substrate 601 is cupped. Alternatively, the surface
region 601 is recessed. The surface region generally has a smooth
surface, plating, or coating. Such plating or coating can be gold,
silver, platinum, aluminum, or any pure or alloy material, which is
suitable for bonding to an overlying semiconductor material, but
can be others.
Referring again to FIG. 6, the device has light emitting diode
devices overlying the surface region. At least one of the light
emitting diode devices 103 is fabricated on a semipolar or nonpolar
GaN containing substrate. The device emits polarized
electromagnetic radiation. As shown, the light emitting device is
coupled to a first potential, which is attached to the substrate,
and a second potential 610, which is coupled to wire or lead 611
bonded to a light emitting diode.
In a specific embodiment, at least one of the light emitting diode
devices provides a quantum well region. The quantum well region is
characterized by an electron wave function and a hole wave function
which are substantially overlapped within a predetermined spatial
region of the quantum well region according to a specific
embodiment.
In a preferred embodiment, the light emitting diode device
comprises at least a blue LED and the substantially polarized
emission is blue light at a range from about 430 nanometers to
about 490 nanometers.
The device has a thickness 115 of one or more which are excited by
the substantially polarized emission and emit electromagnetic
radiation at second wavelengths. In a preferred embodiment, the
plurality of entities is emit substantially yellow light from an
interaction with the substantially polarized emission of blue
light. In a specific embodiment, the thickness of the plurality of
entities, which are phosphor entities, is about five microns or
less.
In a specific embodiment, the one or more entities comprises a
phosphor or phosphor blend selected from one or more of (Y, Gd, Tb,
Sc, Lu, La).sub.3(Al, Ga, In).sub.5O.sub.12:Ce.sup.3+,
SrGa.sub.2S.sub.4:Eu.sup.2+, SrS:Eu.sup.2+, and colloidal quantum
dot thin films comprising CdTe, ZnS, ZnSe, ZnTe, CdSe, or CdTe. In
other embodiments, the device may include a phosphor capable of
emitting substantially red light. Such phosphor is be selected from
(Gd,Y,Lu,La).sub.2O.sub.3:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La).sub.2O.sub.2S:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La)VO.sub.4:Eu.sup.3+, Bi.sup.3+;
Y.sub.2(O,S).sub.3:Eu.sup.3+; Ca.sub.1-xMo.sub.1-ySi.sub.yO.sub.4:
where 0.05.ltoreq.x.ltoreq.0.5, 0.ltoreq.y.ltoreq.0.1;
(Li,Na,K).sub.5Eu(W,Mo)O.sub.4; (Ca,Sr)S:Eu.sup.2+;
SrY.sub.2S.sub.4:Eu.sup.2+; CaLa.sub.2S.sub.4:Ce.sup.3+;
(Ca,Sr)S:Eu.sup.2+; 3.5MgO*0.5MgF.sub.2*GeO.sub.2:Mn.sub.4+ (MFG);
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
(Y,Lu).sub.2WO.sub.6:Eu.sup.3+, Mo.sup.6+;
(Ba,Sr,Ca).sub.3Mg.sub.xSi.sub.2O.sub.8:Eu.sup.2+, Mn.sup.2+,
wherein 1<x.ltoreq.2;
(RE.sub.1-yCe.sub.y)Mg.sub.2-xLi.sub.xSi.sub.3-xP.sub.xO.sub.12,
where RE is at least one of Sc, Lu, Gd, Y, and Tb,
0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,
La).sub.2-xEu.sub.xW.sub.1-yMo.sub.yO.sub.6, where
0.5.ltoreq.x.ltoreq.1.0, 0.01.ltoreq.y.ltoreq.1.0;
(SrCa).sub.1-xEu.sub.xSi.sub.5N.sub.8, where
0.01.ltoreq.x.ltoreq.0.3; SrZnO.sub.2:Sm.sup.+3; M.sub.mO.sub.nX
wherein M is selected from the group of Sc, Y, a lanthanide, an
alkali earth metal and mixtures thereof; X is a halogen;
1.ltoreq.m.ltoreq.3; and 1.ltoreq.n.ltoreq.4, and wherein the
lanthanide doping level can range from 0.1 to 40% spectral weight;
and Eu.sup.3+ activated phosphate or borate phosphors; and mixtures
thereof.
In a specific embodiment, the light emitting diode device comprises
at least a violet LED device capable of emitting electromagnetic
radiation at a range from about 380 nanometers to about 440
nanometers, and the one or more entities are capable of emitting
substantially white light. Other colored LEDs may also be used or
combined according to a specific embodiment.
In a specific embodiment, the one or more entities comprise a blend
of phosphors capable of emitting substantially blue light,
substantially green light, and substantially red light. As an
example, the blue emitting phosphor is selected from the group
consisting of
(Ba,Sr,Ca).sub.5(PO.sub.4).sub.3(Cl,F,Br,OH):Eu.sup.2+, Mn.sup.2+;
Sb.sup.3+,(Ba,Sr,Ca)MgAl.sub.10O.sub.17:Eu.sup.2+, Mn.sup.2+;
(Ba,Sr,Ca)BPO.sub.5:Eu.sup.2+, Mn.sup.2+;
(Sr,Ca).sub.10(PO.sub.4).sub.6*nB.sub.2O.sub.3:Eu.sup.2+;
2SrO*0.84P.sub.2O.sub.5*0.16B.sub.2O.sub.3:Eu.sup.2+;
Sr.sub.2Si.sub.3O.sub.8*2SrCl.sub.2:Eu.sup.2+;
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
Sr.sub.4Al.sub.14O.sub.25:Eu.sup.2+ (SAE);
BaAl.sub.8O.sub.13:Eu.sup.2+; and mixtures thereof. As an example,
the green phosphor is selected from the group consisting of
(Ba,Sr,Ca)MgAl.sub.10O.sub.17:Eu.sup.2+, Mn.sup.2+ (BAMn);
(Ba,Sr,Ca)Al.sub.2O.sub.4:Eu.sup.2+;
(Y,Gd,Lu,Sc,La)BO.sub.3:Ce.sup.3+,Tb.sup.3+;
Ca.sub.8Mg(SiO.sub.4).sub.4Cl.sub.2:Eu.sup.2+, Mn.sup.2+;
(Ba,Sr,Ca).sub.2SiO.sub.4:Eu.sup.2+;
(Ba,Sr,Ca).sub.2(Mg,Zn)Si.sub.2O.sub.7:Eu.sup.2+;
(Sr,Ca,Ba)(Al,Ga,In).sub.2S.sub.4:Eu.sup.2+;
(Y,Gd,Tb,La,Sm,Pr,Lu).sub.3(Al,Ga).sub.5O.sub.12:Ce.sup.3+;
(Ca,Sr).sub.8(Mg,Zn)(SiO.sub.4).sub.4Cl.sub.2:Eu.sup.2+, Mn.sup.2+
(CASI); Na.sub.2Gd.sub.2B.sub.2O.sub.7:Ce.sup.3+, Tb.sup.3+;
(Ba,Sr).sub.2(Ca,Mg,Zn)B.sub.2O.sub.6:K,Ce,Tb; and mixtures
thereof. As an example, the red phosphor is selected from the group
consisting of (Gd,Y,Lu,La).sub.2O.sub.3:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La).sub.2O.sub.2S:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La)VO.sub.4:Eu.sup.3+, Bi.sup.3+;
Y.sub.2(O,S).sub.3:Eu.sup.3+; Ca.sub.1-xMo.sub.1-ySi.sub.yO.sub.4:
where 0.05.ltoreq.x.ltoreq.0.5, 0.ltoreq.y.ltoreq.0.1;
(Li,Na,K).sub.5Eu(W,Mo)O.sub.4; (Ca,Sr)S:Eu.sup.2+;
SrY.sub.2S.sub.4:Eu.sup.2+; CaLa.sub.2S.sub.4:Ce.sup.3+;
(Ca,Sr)S:Eu.sup.2+; 3.5MgO*0.5MgF.sub.2*GeO.sub.2:Mn.sup.4+ (MFG);
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
(Y,Lu).sub.2WO.sub.6:Eu.sup.3+, Mo.sup.6+;
(Ba,Sr,Ca).sub.3Mg.sub.xSi.sub.2O.sub.8:Eu.sup.2+, Mn.sup.2+,
wherein 1<x.ltoreq.2;
(RE.sub.1-yCe.sub.y)Mg.sub.2-xLi.sub.xSi.sub.3-xP.sub.xO.sub.12,
where RE is at least one of Sc, Lu, Gd, Y, and Tb,
0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,
La).sub.2-xEu.sub.xW.sub.1-yMo.sub.yO.sub.6, where
0.5.ltoreq.x.ltoreq.1.0, 0.01.ltoreq.y.ltoreq.1.0;
(SrCa).sub.1-xEu.sub.xSi.sub.5N.sub.8, where
0.01.ltoreq.x.ltoreq.0.3; SrZnO.sub.2:Sm.sup.+3; M.sub.mO.sub.nX,
wherein M is selected from the group of Sc, Y, a lanthanide, an
alkali earth metal and mixtures thereof; X is a halogen;
1.ltoreq.m.ltoreq.3; and 1.ltoreq.n.ltoreq.4, and wherein the
lanthanide doping level can range from 0.1 to 40% spectral weight;
and Eu.sup.3+ activated phosphate or borate phosphors; and mixtures
thereof.
In a specific embodiment, the present packaged device includes a
second LED device 603 or possibly multiple devices. As shown, the
second LED device is coupled to a first potential, which is
attached to the substrate, and a second potential 609, which is
coupled to wire or lead 111 bonded to the second LED device. The
second LED device can be coated with a phosphor or remain uncoated
615. The LED device can be one of a plurality of colors including,
but not limited to red, blue, green, yellow, violet, amber, cyan,
and others emitting electromagnetic radiation, including
ultraviolet. In a specific embodiment, the LED device can be made
on a polar, non-polar, or semi-polar gallium nitride containing
material. Alternatively, the LED can be made on an AlInGaP or like
material.
In other embodiments, the packaged device can include other types
of optical and/or electronic devices. As an example, the optical
devices can be an organic light emitting diode (OLED), a laser
diode, a nanoparticle optical device, or others. The electronic
device can include an integrated circuit, a transistor, a
rectifier, a sensor, a micro-machined electronic mechanical system,
or any combination of these, and the like.
In a specific embodiment, the present packaged device includes an
enclosure 617. The enclosure can be made of a suitable material
such as an optically transparent plastic, glass, or other material.
As also shown, the enclosure has a suitable shape 619 which can be
annular, circular, egg-shaped, trapezoidal, or a combination of
these. Depending upon the embodiment, the enclosure is configured
to facilitate, and even optimize transmission of electromagnetic
radiation from the LED device with coating through the surface
region of the enclosure.
FIGS. 7 through 10 illustrate a simplified method of assembling the
light emitting device of FIG. 6 according to an embodiment of the
present invention.
FIG. 11 is a simplified diagram of another alternative packaged
light emitting device using an optical path to a plane region
according to an embodiment of the present invention. As shown, the
device has a substrate made of a suitable material such a metal
including, but not limited to, Alloy 42, copper, dielectrics or
plastics, among others. In a specific embodiment, the substrate is
generally from a lead frame member such as a metal alloy, but can
be others.
The substrate, which holds the LED, can come in various shapes,
sizes, and configurations. In a specific embodiment, the surface
region of substrate 1101 is cupped. Alternatively, the surface
region 1101 is recessed. The surface region is generally a smooth
surface, plating, or coating. Such plating or coating can be gold,
silver, platinum, aluminum, or any pure or alloy material, which is
suitable for bonding to an overlying semiconductor material, but
can be others.
Referring again to FIG. 11, the device has light emitting diode
devices overlying the surface region. At least one of the light
emitting diode devices 1103 is fabricated on a semipolar or
nonpolar GaN containing substrate and emits polarized
electromagnetic radiation 1105. As shown, the light emitting device
is coupled to a first potential, which is attached to the
substrate, and a second potential 1109, which is coupled to wire or
lead 1111. One of the light emitting diode devices includes a
quantum well region characterized by an electron wave function and
a hole wave function which are substantially overlapped within a
predetermined spatial region of the quantum well region.
In a preferred embodiment, the light emitting diode device include
at least a blue LED device which emits polarized blue light at a
range from about 430 nanometers to about 490 nanometers.
The packaged device includes an enclosure 1117 made of a suitable
material such as an optically transparent plastic, glass, or other
material. The enclosure has a suitable shape 1119 which can be
annular, circular, egg-shaped, trapezoidal, or a combination of
these. Depending upon the embodiment, the enclosure with suitable
shape and material is configured to facilitate and even optimize
transmission of electromagnetic radiation from the LED device
through the surface region of the enclosure. The enclosure includes
an interior region and an exterior region with a volume defined
within the interior region. The volume is open and filled with an
inert gas or air to provide an optical path between the LED device
or devices and the surface region of the enclosure.
In a specific embodiment, the present packaged device also has a
thickness .[.1115.]. .Iadd.1155 .Iaddend.of entities formed
overlying the enclosure to interact with light from the light
emitting diode devices. In a specific embodiment, the entities are
excited by the substantially polarized emission and emit
electromagnetic radiation of second wavelengths. In a preferred
embodiment, the plurality of entities is capable of emitting
substantially yellow light from an interaction with the
substantially polarized emission of blue light. In a specific
embodiment, the thickness of phosphor entities is about five
microns or less.
In a specific embodiment, entities comprises a phosphor or phosphor
blend selected from one or more of (Y, Gd, Tb, Sc, Lu,
La).sub.3(Al, Ga, In).sub.5O.sub.12:Ce.sup.3+,
SrGa.sub.2S.sub.4:Eu.sup.2+, SrS:Eu.sup.2+, and colloidal quantum
dot thin films comprising CdTe, ZnS, ZnSe, ZnTe, CdSe, or CdTe. In
other embodiments, the device may include a phosphor capable of
emitting substantially red light. Such phosphor is be selected from
(Gd,Y,Lu,La).sub.2O.sub.3:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La).sub.2O.sub.2S:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La)VO.sub.4:Eu.sup.3+, Bi.sup.3+;
Y.sub.2(O,S).sub.3:Eu.sup.3+; Ca.sub.1-xMo.sub.1-ySi.sub.yO.sub.4:
where 0.05.ltoreq.x.ltoreq.0.5, 0.ltoreq.y.ltoreq.0.1;
(Li,Na,K).sub.5Eu(W,Mo)O.sub.4; (Ca,Sr)S:Eu.sup.2+;
SrY.sub.2S.sub.4:Eu.sup.2+; CaLa.sub.2S.sub.4:Ce.sup.3+;
(Ca,Sr)S:Eu.sup.2+; 3.5MgO*0.5MgF.sub.2*GeO.sub.2:Mn.sup.4+ (MFG);
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
(Y,Lu).sub.2WO.sub.6:Eu.sup.3+, Mo.sup.6+;
(Ba,Sr,Ca).sub.3Mg.sub.xSi.sub.2O.sub.8:Eu.sup.2+, Mn.sup.2+,
wherein 1<x.ltoreq.2;
(RE.sub.1-yCe.sub.y)Mg.sub.2-xLi.sub.xSi.sub.3-xP.sub.xO.sub.12,
where RE is at least one of Sc, Lu, Gd, Y, and Tb,
0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,
La).sub.2-xEu.sub.xW.sub.1-yMo.sub.yO.sub.6, where
0.5.ltoreq.x.ltoreq.1.0, 0.01.ltoreq.y.ltoreq.1.0;
(SrCa).sub.1-xEu.sub.xSi.sub.5N.sub.8, where
0.01.ltoreq.x.ltoreq.0.3; SrZnO.sub.2:Sm.sup.+3; M.sub.mO.sub.nX
wherein M is selected from the group of Sc, Y, a lanthanide, an
alkali earth metal and mixtures thereof; X is a halogen;
1.ltoreq.m.ltoreq.3; and 1.ltoreq.n.ltoreq.4, and wherein the
lanthanide doping level can range from 0.1 to 40% spectral weight;
and Eu.sup.3+ activated phosphate or borate phosphors; and mixtures
thereof.
In a specific embodiment, the one or more entities comprise a blend
of phosphors capable of emitting substantially blue light,
substantially green light, and substantially red light. As an
example, the blue emitting phosphor is selected from the group
consisting of
(Ba,Sr,Ca).sub.5(PO.sub.4).sub.3(Cl,F,Br,OH):Eu.sup.2+, Mn.sup.2+;
Sb.sup.3+,(Ba,Sr,Ca)MgAl.sub.10O.sub.17:Eu.sup.2+, Mn.sup.2+;
(Ba,Sr,Ca)BPO.sub.5:Eu.sup.2+, Mn.sup.2+;
(Sr,Ca).sub.10(PO.sub.4).sub.6*nB.sub.2O.sub.3:Eu.sup.2+;
2SrO*0.84P.sub.2O.sub.5*0.16B.sub.2O.sub.3:Eu.sup.2+;
Sr.sub.2Si.sub.3O.sub.8*2SrCl.sub.2:Eu.sup.2+;
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
Sr.sub.4Al.sub.14O.sub.25:Eu.sup.2+ (SAE);
BaAl.sub.8O.sub.13:Eu.sup.2+; and mixtures thereof. As an example,
the green phosphor is selected from the group consisting of
(Ba,Sr,Ca)MgAl.sub.10O.sub.17:Eu.sup.2+, Mn.sup.2+ (BAMn);
(Ba,Sr,Ca)Al.sub.2O.sub.4:Eu.sup.2+;
(Y,Gd,Lu,Sc,La)BO.sub.3:Ce.sup.3+,Tb.sup.3+;
Ca.sub.8Mg(SiO.sub.4).sub.4Cl.sub.2:Eu.sup.2+, Mn.sup.2+;
(Ba,Sr,Ca).sub.2SiO.sub.4:Eu.sup.2+;
(Ba,Sr,Ca).sub.2(Mg,Zn)Si.sub.2O.sub.7:Eu.sup.2+;
(Sr,Ca,Ba)(Al,Ga,In).sub.2S.sub.4:Eu.sup.2+;
(Y,Gd,Tb,La,Sm,Pr,Lu).sub.3(Al,Ga).sub.5O.sub.12:Ce.sup.3+;
(Ca,Sr).sub.8(Mg,Zn)(SiO.sub.4).sub.4Cl.sub.2:Eu.sup.2+, Mn.sup.2+
(CASI); Na.sub.2Gd.sub.2B.sub.2O.sub.7:Ce.sup.3+, Tb.sup.3+;
(Ba,Sr).sub.2(Ca,Mg,Zn)B.sub.2O.sub.6:K,Ce,Tb; and mixtures
thereof. As an example, the red phosphor is selected from the group
consisting of (Gd,Y,Lu,La).sub.2O.sub.3:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La).sub.2O.sub.2S:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La)VO.sub.4:Eu.sup.3+, Bi.sup.3+;
Y.sub.2(O,S).sub.3:Eu.sup.3+; Ca.sub.1-xMo.sub.1-ySi.sub.yO.sub.4:
where 0.05.ltoreq.x.ltoreq.0.5, 0.ltoreq.y.ltoreq.0.1;
(Li,Na,K).sub.5Eu(W,Mo)O.sub.4; (Ca,Sr)S:Eu.sup.2+;
SrY.sub.2S.sub.4:Eu.sup.2+; CaLa.sub.2S.sub.4:Ce.sup.3+;
(Ca,Sr)S:Eu.sup.2+; 3.5MgO*0.5MgF.sub.2*GeO.sub.2:Mn.sup.4+ (MFG);
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
(Y,Lu).sub.2WO.sub.6:Eu.sup.3+, Mo.sup.6+;
(Ba,Sr,Ca).sub.3Mg.sub.xSi.sub.2O.sub.8:Eu.sup.2+, Mn.sup.2+,
wherein 1<x.ltoreq.2;
(RE.sub.1-yCe.sub.y)Mg.sub.2-xLi.sub.xSi.sub.3-xP.sub.xO.sub.12,
where RE is at least one of Sc, Lu, Gd, Y, and Tb,
0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,
La).sub.2-xEu.sub.xW.sub.1-yMo.sub.yO.sub.6, where
0.5.ltoreq.x.ltoreq.1.0, 0.01.ltoreq.y.ltoreq.1.0;
(SrCa).sub.1-xEu.sub.xSi.sub.5N.sub.8, where
0.01.ltoreq.x.ltoreq.0.3; SrZnO.sub.2:Sm.sup.+3; M.sub.mO.sub.nX,
wherein M is selected from the group of Sc, Y, a lanthanide, an
alkali earth metal and mixtures thereof; X is a halogen;
1.ltoreq.m.ltoreq.3; and 1.ltoreq.n.ltoreq.4, and wherein the
lanthanide doping level can range from 0.1 to 40% spectral weight;
and Eu.sup.3+ activated phosphate or borate phosphors; and mixtures
thereof.
FIGS. 12 through 15 illustrate a simplified method of assembling
the light emitting device of FIG. 11 according to an embodiment of
the present invention.
FIG. 16 is a simplified diagram of a yet an alternative packaged
light emitting device 1600 using an optical path to a plane region
and filler material according to an embodiment of the present
invention. The invention provides a packaged light emitting device
1600 with a substrate member having a surface region. In a specific
embodiment, the substrate is made of a suitable material such a
metal including, but not limited to, Alloy 42, copper, dielectric,
or even plastic, among others, and preferably is a lead frame
member such as a metal alloy.
The substrate, which holds the LED, can come in various shapes,
sizes, and configurations and can be cupped or recessed.
Additionally, the surface region is generally a smooth surface,
with plating or coating. Such plating or coating can be gold,
silver, platinum, or any pure or alloy material, which is suitable
for bonding to an overlying semiconductor material, but can be
others.
Referring again to FIG. .[.1.]. .Iadd.16.Iaddend., the device has
one or more light emitting diode devices overlying the surface
region. Each light emitting diode device 1603 is fabricated on a
semipolar or nonpolar GaN containing substrate and emits polarized
electromagnetic radiation. As shown, the light emitting device is
coupled to a first potential, which is attached to the substrate,
and a second potential 1609, which is coupled to wire or lead 1611
bonded to a light emitting diode. At least one of the light
emitting diode devices includes a quantum well region characterized
by an electron wave function and a hole wave function. The electron
wave function and the hole wave function are substantially
overlapped within a predetermined spatial region of the quantum
well. In a preferred embodiment, the one or more light emitting
diode device comprises at least a blue LED device emitting
substantially polarized blue light at a range from about 480
nanometers to about 570 nanometers.
In a specific embodiment, the present device also has a thickness
1615 of one or more entities formed overlying the light emitting
diode devices and within an interior region of enclosure 1617,
which will be described in more detail below. The entities are
excited by the substantially polarized emission and emit
electromagnetic radiation of second wavelengths. In a preferred
embodiment, the plurality of entities emits substantially yellow
light from an interaction with the blue light. The phosphor is
about five microns or less thick.
In a specific embodiment, entities comprises a phosphor or phosphor
blend selected from (Y, Gd, Tb, Sc, Lu, La).sub.3(Al, Ga,
In).sub.5O.sub.12:Ce.sup.3+, SrGa.sub.2S.sub.4:Eu.sup.2+,
SrS:Eu.sup.2+, and colloidal quantum dot thin films comprising
CdTe, ZnS, ZnSe, ZnTe, CdSe, or CdTe. In other embodiments, the
device may include a phosphor capable of emitting substantially red
light. Such phosphor is be selected from
(Gd,Y,Lu,La).sub.2O.sub.3:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La).sub.2O.sub.2S:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La)VO.sub.4:Eu.sup.3+, Bi.sup.3+;
Y.sub.2(O,S).sub.3:Eu.sup.3+; Ca.sub.1-xMo.sub.1-ySi.sub.yO.sub.4:
where 0.05.ltoreq.x.ltoreq.0.5, 0.ltoreq.y.ltoreq.0.1;
(Li,Na,K).sub.5Eu(W,Mo)O.sub.4; (Ca,Sr)S:Eu.sup.2+;
SrY.sub.2S.sub.4:Eu.sup.2+; CaLa.sub.2S.sub.4:Ce.sup.3+;
(Ca,Sr)S:Eu.sup.2+; 3.5MgO*0.5MgF.sub.2*GeO.sub.2:Mn.sup.4+ (MFG);
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
(Y,Lu).sub.2WO.sub.6:Eu.sup.3+, Mo.sup.6+;
(Ba,Sr,Ca).sub.3Mg.sub.xSi.sub.2O.sub.8:Eu.sup.2+, Mn.sup.2+,
wherein 1<x.ltoreq.2;
(RE.sub.1-yCe.sub.y)Mg.sub.2-xLi.sub.xSi.sub.3-xP.sub.xO.sub.12,
where RE is at least one of Sc, Lu, Gd, Y, and Tb,
0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,
La).sub.2-xEu.sub.xW.sub.1-yMo.sub.yO.sub.6, where
0.5.ltoreq.x.ltoreq.1.0, 0.01.ltoreq.y.ltoreq.1.0;
(SrCa).sub.1-xEu.sub.xSi.sub.5N.sub.8, where
0.01.ltoreq.x.ltoreq.0.3; SrZnO.sub.2:Sm.sup.+3; M.sub.mO.sub.nX
wherein M is selected from the group of Sc, Y, a lanthanide, an
alkali earth metal and mixtures thereof; X is a halogen;
1.ltoreq.m.ltoreq.3; and 1.ltoreq.n.ltoreq.4, and wherein the
lanthanide doping level can range from 0.1 to 40% spectral weight;
and Eu.sup.3+ activated phosphate or borate phosphors; and mixtures
thereof.
In a specific embodiment, the light emitting diode device comprises
at least a violet LED device capable of emitting electromagnetic
radiation at a range from about 380 nanometers to about 440
nanometers and the entities are capable of emitting substantially
white light, the substantially polarized emission being violet
light. Other colored LEDs may also be used or combined according to
a specific embodiment.
In a specific embodiment, the entities comprise a blend of
phosphors capable of emitting substantially blue light,
substantially green light, and substantially red light. As an
example, the blue emitting phosphor is selected from the group
consisting of
(Ba,Sr,Ca).sub.5(PO.sub.4).sub.3(Cl,F,Br,OH):Eu.sup.2+, Mn.sup.2+;
Sb.sup.3+,(Ba,Sr,Ca)MgAl.sub.10O.sub.17:Eu.sup.2+, Mn.sup.2+;
(Ba,Sr,Ca)BPO.sub.5:Eu.sup.2+, Mn.sup.2+; (Sr,
Ca).sub.10(PO.sub.4).sub.6*nB.sub.2O.sub.3:Eu.sup.2+;
2SrO*0.84P.sub.2O.sub.5*0.16B.sub.2O.sub.3:Eu.sup.2+;
Sr.sub.2Si.sub.3O.sub.8*2SrCl.sub.2:Eu.sup.2+;
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
Sr4Al.sub.14O.sub.25:Eu.sup.2+ (SAE); BaAl.sub.8O.sub.13:Eu.sup.2+;
and mixtures thereof. As an example, the green phosphor is selected
from the group consisting of
(Ba,Sr,Ca)MgAl.sub.10O.sub.17:Eu.sup.2+, Mn.sup.2+ (BAMn);
(Ba,Sr,Ca)Al.sub.2O.sub.4:Eu.sup.2+;
(Y,Gd,Lu,Sc,La)BO.sub.3:Ce.sup.3+,Tb.sup.3+;
Ca.sub.8Mg(SiO.sub.4).sub.4Cl.sub.2:Eu.sup.2+, Mn.sup.2+;
(Ba,Sr,Ca).sub.2SiO.sub.4:Eu.sup.2+;
(Ba,Sr,Ca).sub.2(Mg,Zn)Si.sub.2O.sub.7:Eu.sup.2+;
(Sr,Ca,Ba)(Al,Ga,In).sub.2S.sub.4:Eu.sup.2+;
(Y,Gd,Tb,La,Sm,Pr,Lu).sub.3(Al,Ga).sub.5O.sub.12:Ce.sup.3+;
(Ca,Sr).sub.8(Mg,Zn)(SiO.sub.4).sub.4Cl.sub.2:Eu.sup.2+, Mn.sup.2+
(CASI); Na.sub.2Gd.sub.2B.sub.2O.sub.7:Ce.sup.3+, Tb.sup.3+;
(Ba,Sr).sub.2(Ca,Mg,Zn)B.sub.2O.sub.6:K,Ce,Tb; and mixtures
thereof. As an example, the red phosphor is selected from the group
consisting of (Gd,Y,Lu,La).sub.2O.sub.3:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La).sub.2O.sub.2S:Eu.sup.3+, Bi.sup.3+;
(Gd,Y,Lu,La)VO.sub.4:Eu.sup.3+, Bi.sup.3+;
Y.sub.2(O,S).sub.3:Eu.sup.3+; Ca.sub.1-xMo.sub.1-ySi.sub.yO.sub.4:
where 0.05.ltoreq.x.ltoreq.0.5, 0.ltoreq.y.ltoreq.0.1;
(Li,Na,K).sub.5Eu(W,Mo)O.sub.4; (Ca,Sr)S:Eu.sup.2+;
SrY.sub.2S.sub.4:Eu.sup.2+; CaLa.sub.2S.sub.4:Ce.sup.3+;
(Ca,Sr)S:Eu.sup.2+; 3.5MgO*0.5MgF.sub.2*GeO.sub.2:Mn.sup.4+ (MFG);
(Ba,Sr,Ca)Mg.sub.xP.sub.2O.sub.7:Eu.sup.2+, Mn.sup.2+;
(Y,Lu).sub.2WO.sub.6:Eu.sup.3+, Mo.sup.6+;
(Ba,Sr,Ca).sub.3Mg.sub.xSi.sub.2O.sub.8:Eu.sup.2+, Mn.sup.2+,
wherein 1<x.ltoreq.2;
(RE.sub.1-yCe.sub.y)Mg.sub.2-xLi.sub.xSi.sub.3-xP.sub.xO.sub.12,
where RE is at least one of Sc, Lu, Gd, Y, and Tb,
0.0001<x<0.1 and 0.001<y<0.1; (Y, Gd, Lu,
La).sub.2-xEu.sub.xW.sub.1-yMo.sub.yO.sub.6, where
0.5.ltoreq.x.ltoreq.1.0, 0.01.ltoreq.y.ltoreq.1.0;
(SrCa).sub.1-xEu.sub.xSi.sub.5N.sub.8, where
0.01.ltoreq.x.ltoreq.0.3; SrZnO.sub.2:Sm.sup.+3; M.sub.mO.sub.nX,
wherein M is selected from the group of Sc, Y, a lanthanide, an
alkali earth metal and mixtures thereof; X is a halogen;
1.ltoreq.m.ltoreq.3; and 1.ltoreq.n.ltoreq.4, and wherein the
lanthanide doping level can range from 0.1 to 40% spectral weight;
and Eu.sup.3+ activated phosphate or borate phosphors; and mixtures
thereof.
In a specific embodiment, the present packaged device includes an
enclosure 1617. The enclosure can be made of a suitable material
such as an optically transparent plastic, glass, or other material.
As also shown, the enclosure has a suitable shape 1619 which can be
annular, circular, egg-shaped, trapezoidal, or a combination of
these shapes. Depending upon the embodiment, the enclosure with
suitable shape and material is configured to facilitate and even
optimize transmission of electromagnetic radiation from the LED
device through the surface region of the enclosure. In a specific
embodiment, the enclosure comprises an interior region and an
exterior region with a volume defined within the interior region.
The volume is open and filled with an inert gas or air to provide
an optical path between the LED device or devices and the surface
region of the enclosure. In a specific embodiment, the enclosure
also has a thickness and fits around a base region of the
substrate.
In a specific embodiment, the plurality of entities is suspended in
a suitable medium. An example of such a medium can be a silicone,
glass, spin on glass, plastic, polymer, which is doped, metal, or
semiconductor material, including layered materials, and/or
composites, among others. Depending upon the embodiment, the medium
including polymers begins as a fluidic state, which fills an
interior region of the enclosure. The medium fills and can seal the
LED device or devices. The medium is then cured and fills in a
substantially stable state. The medium is preferably optically
transparent, but can also be selectively transparent and/or
translucent. In addition, the medium, once cured, is substantially
inert. In a preferred embodiment, the medium has a low absorption
capability to allow a substantial portion of the electromagnetic
radiation generated by the LED device to traverse through the
medium and be outputted through the enclosure. In other
embodiments, the medium can be doped or treated to selectively
filter, disperse, or influence selected wavelengths of light. As an
example, the medium can be treated with metals, metal oxides,
dielectrics, or semiconductor materials, and/or combinations of
these materials, and the like.
FIGS. 17 through 20 illustrate a simplified method of assembling
the light emitting device of FIG. 16 according to an embodiment of
the present invention.
FIG. 21 is a simplified diagram of a yet an alternative packaged
light emitting device using an optical path to a plane region
according to an embodiment of the present invention. As shown, the
packaged light emitting device includes one or more entities formed
within an interior region of enclosure 2117.
FIG. 22 is a simplified diagram of a yet an alternative packaged
light emitting device using an optical path to a plane region
according to an embodiment of the present invention. The packaged
light emitting device includes entities formed within a thickness
of enclosure 2217.
Although the above has been described in terms of an embodiment of
a specific package, there can be many variations, alternatives, and
modifications. As an example, the LED device can be configured in a
variety of packages such as cylindrical, surface mount, power,
lamp, flip-chip, star, array, strip, or geometries that rely on
lenses (silicone, glass) or sub-mounts (ceramic, silicon, metal,
composite). Alternatively, the package can be any variations of
these packages.
In other embodiments, the packaged device can include other types
of optical and/or electronic devices. As an example, the optical
devices can be OLED, a laser, a nanoparticle optical device, and
others. In other embodiments, the electronic device can include an
integrated circuit, a sensor, a micro-machined electronic
mechanical system, or any combination of these, and the like.
In a specific embodiment, the packaged device can be coupled to a
rectifier to convert alternating current power to direct current,
which is suitable for the packaged device. The rectifier can be
coupled to a suitable base, such as an Edison screw such as E27 or
E14, bipin base such as MR16 or GU5.3, or a bayonet mount such as
GU10, or others. In other embodiments, the rectifier can be
spatially separated from the packaged device.
Additionally, the present packaged device can be provided in a
variety of applications. In a preferred embodiment, the application
is general lighting, which includes buildings for offices, housing,
outdoor lighting, stadium lighting, and others. Alternatively, the
applications can be for display, such as those used for computing
applications, televisions, flat panels, micro-displays, and others.
Still further, the applications can include automotive, gaming, and
others.
In a specific embodiment, the present devices are configured to
achieve spatial uniformity. That is, diffusers can be added to the
encapsulant to achieve spatial uniformity. Depending upon the
embodiment, the diffusers can include TiO.sub.2, CaF.sub.2,
SiO.sub.2, CaCO.sub.3, BaSO.sub.4, and others, which are optically
transparent and have a different index than the encapsulant causing
the light to reflect, refract, and scatter to make the far field
pattern more uniform. Of course, there can be other variations,
modifications, and alternatives.
As used herein, the term GaN substrate is associated with Group
III-nitride based materials including GaN, InGaN, AlGaN, or other
Group III containing alloys or compositions that are used as
starting materials. Such starting materials include polar GaN
substrates (i.e., substrate where the largest area surface is
nominally an (h k l) plane wherein h=k=0, and l is non-zero),
non-polar GaN substrates (i.e., substrate material where the
largest area surface is oriented at an angle ranging from about
80-100 degrees from the polar orientation described above towards
an (h k l) plane wherein l=0, and at least one of h and k is
non-zero) or semi-polar GaN substrates (i.e., substrate material
where the largest area surface is oriented at an angle ranging from
about +0.1 to 80 degrees or 110-179.9 degrees from the polar
orientation described above towards an (h k l) plane wherein l=0,
and at least one of h and k is non-zero).
While the above is a full description of the specific embodiments,
various modifications, alternative constructions and equivalents
may be used. Additionally, the above has been generally described
in terms of entities that may be phosphor materials or phosphor
like materials, but it would be recognized that other
"energy-converting luminescent materials," which may include one or
more phosphors, semiconductors, semiconductor nanoparticles
("quantum dots"), organic luminescent materials, and the like, and
combinations of them, can also be used. The energy converting
luminescent materials can generally be wavelength converting
material and/or materials or thicknesses of them. Furthermore, the
above has been generally described in electromagnetic radiation
that directly emits and interacts with the wavelength conversion
materials, but it would be recognized that the electromagnetic
radiation can be reflected and then interact with the wavelength
conversion materials or a combination of reflection and direct
incident radiation. The specification describes specific gallium
and nitrogen containing surface orientations, but it would be
recognized that other plane orientations can be used. Therefore,
the above description and illustrations should not be taken as
limiting the scope of the present invention which is defined by the
appended claims.
* * * * *
References