U.S. patent number RE40,062 [Application Number 09/587,249] was granted by the patent office on 2008-02-12 for display device with electron-emitting device with electron-emitting region insulated from electrodes.
This patent grant is currently assigned to Canon Kabushiki Kaisha. Invention is credited to Yoshikazu Banno, Tetsuya Kaneko, Ichiro Nomura, Hidetoshi Suzuki, Toshihiko Takeda, Kojiro Yokono, Seishiro Yoshioka.
United States Patent |
RE40,062 |
Yoshioka , et al. |
February 12, 2008 |
**Please see images for:
( Certificate of Correction ) ** |
Display device with electron-emitting device with electron-emitting
region insulated from electrodes
Abstract
A display device includes an electron-emitting device which is a
laminate of an insulating layer and a pair of opposing electrodes
formed on a planar substrate. A portion of the insulating layer is
between the electrodes and contains fine particles of an electron
emitting substance, that portion acting as an electron emitting
region. Electrons are emitted from the electron emission region by
applying a voltage to the electrodes, thereby stimulating a
phosphorous to emit light.
Inventors: |
Yoshioka; Seishiro (Hiratsuka,
JP), Nomura; Ichiro (Atsugi, JP), Suzuki;
Hidetoshi (Yokohama, JP), Takeda; Toshihiko
(Yokohama, JP), Kaneko; Tetsuya (Yokohama,
JP), Banno; Yoshikazu (Machida, JP),
Yokono; Kojiro (Yokohama, JP) |
Assignee: |
Canon Kabushiki Kaisha (Tokyo,
JP)
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Family
ID: |
39031582 |
Appl.
No.: |
09/587,249 |
Filed: |
June 2, 2000 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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08396066 |
Feb 28, 1995 |
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08191065 |
Feb 3, 1994 |
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07705720 |
May 24, 1991 |
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07218203 |
Jul 13, 1988 |
5066883 |
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Reissue of: |
08479000 |
Jun 7, 1995 |
05759080 |
Jun 2, 1998 |
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Foreign Application Priority Data
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Jul 15, 1987 [JP] |
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62-174837 |
Oct 2, 1987 [JP] |
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62-250448 |
Oct 9, 1987 [JP] |
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62-255063 |
Oct 9, 1987 [JP] |
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62-255068 |
Apr 27, 1988 [JP] |
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63-102485 |
Apr 27, 1988 [JP] |
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63-102486 |
Apr 27, 1988 [JP] |
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63-102487 |
Apr 27, 1988 [JP] |
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63-102488 |
Jun 21, 1988 [JP] |
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63-154516 |
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Current U.S.
Class: |
445/51;
445/24 |
Current CPC
Class: |
H01J
1/316 (20130101); H01J 9/027 (20130101); H01J
29/04 (20130101); H01J 31/127 (20130101); H01J
2329/00 (20130101); H01J 2329/0486 (20130101) |
Current International
Class: |
H01J
9/02 (20060101); H01J 1/30 (20060101) |
Field of
Search: |
;445/24,25 ;313/309 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
|
|
|
|
|
|
|
DS 01800952 |
|
Jul 1971 |
|
DE |
|
DS 01764994 |
|
Jan 1972 |
|
DE |
|
1764994 |
|
Jan 1972 |
|
DE |
|
DS 02542349 |
|
Jul 1975 |
|
DE |
|
2542349 |
|
Jul 1976 |
|
DE |
|
2012101 |
|
Mar 1978 |
|
DE |
|
DS 02012101 |
|
Jul 1978 |
|
DE |
|
DS 02413942 |
|
Feb 1979 |
|
DE |
|
2413942 |
|
Feb 1979 |
|
DE |
|
1800952 |
|
Jul 1997 |
|
DE |
|
00073031 |
|
Mar 1983 |
|
EP |
|
0 299 461 |
|
Jan 1989 |
|
EP |
|
0299461 |
|
Jan 1989 |
|
EP |
|
0 388 984 |
|
Mar 1990 |
|
EP |
|
0523702 |
|
Jan 1993 |
|
EP |
|
0536731 |
|
Apr 1993 |
|
EP |
|
0 299 461 |
|
May 1995 |
|
EP |
|
1267029 |
|
Mar 1972 |
|
GB |
|
1 267 029 |
|
Mar 1972 |
|
GB |
|
1 335 979 |
|
Oct 1973 |
|
GB |
|
1335979 |
|
Oct 1973 |
|
GB |
|
2060991 |
|
May 1981 |
|
GB |
|
44-27852 |
|
Nov 1944 |
|
JP |
|
44-26125 |
|
Jan 1969 |
|
JP |
|
34426125 |
|
Jan 1969 |
|
JP |
|
44-27853 |
|
Nov 1969 |
|
JP |
|
44-28009 |
|
Nov 1969 |
|
JP |
|
34427009 |
|
Nov 1969 |
|
JP |
|
34427852 |
|
Nov 1969 |
|
JP |
|
34427853 |
|
Nov 1969 |
|
JP |
|
44-32247 |
|
Dec 1969 |
|
JP |
|
34432247 |
|
Dec 1969 |
|
JP |
|
45-31615 |
|
Oct 1970 |
|
JP |
|
46-20943 |
|
Jun 1971 |
|
JP |
|
46-20944 |
|
Jun 1971 |
|
JP |
|
46-20949 |
|
Jun 1971 |
|
JP |
|
46-24456 |
|
Jul 1971 |
|
JP |
|
46-38060 |
|
Nov 1971 |
|
JP |
|
54-1147 |
|
Jan 1979 |
|
JP |
|
56-18336 |
|
Feb 1981 |
|
JP |
|
56-018336 |
|
Feb 1981 |
|
JP |
|
56-71239 |
|
Jun 1981 |
|
JP |
|
56-071239 |
|
Jun 1981 |
|
JP |
|
59-169034 |
|
Sep 1984 |
|
JP |
|
61-156265 |
|
Jul 1986 |
|
JP |
|
01-031332 |
|
Feb 1989 |
|
JP |
|
1-283749 |
|
Nov 1989 |
|
JP |
|
1-309242 |
|
Dec 1989 |
|
JP |
|
2-247939 |
|
Oct 1990 |
|
JP |
|
4-65050 |
|
Mar 1992 |
|
JP |
|
6-231678 |
|
Aug 1994 |
|
JP |
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855782 |
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Aug 1981 |
|
SU |
|
Other References
M Hartwell et al., "Strong Electron Emission From patterned
Tin-indium Oxide Thin Films" Cambridge MA, pp. 519-521. IEEE
Transl. GD Conf., 1975. cited by examiner .
M. Elinson et al., "The Emission of Hot Electrons And The Field
Emissions Of Electrons From Tin Oxide", Radio Engineering and
Electron Physics, Jul. 1965, pp. 1291-1296. cited by examiner .
M. Bischoff, V. Olt and H. Pagnia, "Electroluminescence spectra of
discontinuous conducting thin films" (1988), published in Thin
Solid Films, No. 165, pp. 49-54. cited by examiner .
M. Bischoff and H. Pagnia, "Electroluminescence spectra from gold
island structure thin films" (1975), published in Thin Solid Films,
No. 29, pp. 303-312. cited by examiner .
H. Pagnia and N. Sotnik, "Bistable switching in electroformed
metal-insulator-metal devices" (1988), published in Phys. Stat.
Sol. (a), No. 108, pp. 11-65. cited by examiner .
"Thin Film Handbook", Committee 131 of Japanese Society for the
Promotion of Art and Science (1983), and English-Language
translation, no month. cited by other .
"Scanning Tunnelling Microscopic Investigations of Electroformed
Planar Metal-insulator-metal Diodes," H. Pagnia, N. Sotnik, and W.
Wirth, Int. J. Electronics, vol. 69, No. 1, 25-32 (1990), no month.
cited by other .
"Energy Distribution of Emitted Electrons from Electroformed MIM
Structures: The Carbon Island Model," M. Bischoff, H. Pagnia and J,
Trickl, Int. J. Electronics, vol. 73, No. 5, pp. 1009-1010 (1992),
no month. cited by other .
"On the Electron Emission from Evaporated Thin Au Films," M.
Bischoff, R. Holzer and H. Pagnia, Physics Letters, vol. 62A, No. 7
(Oct. 3, 1977), pp. 512-514. cited by other .
"The Electroforming Process in MIM Diodes," vol. 85, R. Blessing,
H. Pagnia and N. Sotnik, Thin Solid Films, pp. 119-128 (1981), no
month. cited by other .
"Evidence for the Contribution of an Adsorbate to the
Voltage-Controlled Negative Resistance of Gold Island Film Diodes,"
R. Blessing, H. Pagnia and R. Schmitt, Thin Solid Films, vol. 78,
pp. 397-401 (1981), no month. cited by other .
"Water-Influenced Switching in Discontinuous Au Film Diodes," R.
Muller and H. Pagnia, Materials Letters, vol. 2, No. 4A, pp.
283-285 (Mar. 1984)). cited by other .
"Influence of Organic Molecules on the Current-Voltage
Characteristic of Planar MIM Diodes," H. Pagnia, N. Sotnik and H.
Strauss, Phy. Stat. Sol., vol. 90, pp. 771-778 (1985), no month.
cited by other .
"Influence of Gas Composition on Regeneration in
Metal/Insulator/Metal Diodes," M. Borbonus, H. Pagnia and N.
Sotnik, Thin Solid Films, vol. 151, pp. 333-342 (1987), no month.
cited by other .
"Prospects for Metal/non-Metal Microsystems: Sensors, Sources, and
Switches," H. Pagnia, Int. J. Electronics, vol. 73, No. 5, pp.
819-825 (1992), no month. cited by other .
"Carbon-nanoslit Model for The Electroforming Process in MIM
Structures," M. Bischoff, Int. J. Electronics, vol. 70, No. 3, pp.
491-498 (1991), no month. cited by other .
"Metal Influence on Switching MIM Diodes," H. Pagnia et al., phys.
stat. sol. (a) 111,387 (1989). cited by other .
W.P. Dyke, et al., "Field Emission," Advances in Electronics and
Electron Physics, 1956, pp. 90-185, no month. cited by other .
C.A. Spindt, et al. "Physical Properties of Thin-film emission
cathodes with molybdenum cones," J. Appl. Phys., vol. 47 (1976) pp.
5248-5263, no month. cited by other .
C.A. Mead, "Operation of Tunnel-Emission Devices," J. Appl. Phys.,
vol. 32, (1961) pp. 646-652, no month. cited by other .
M.I. Elinson, et al., "The Emission of Hot Electrons and the Field
Emission of Electrons from Tin Oxide," Radio Engineering and
Electronic Physics, (1965), pp. 1290-1296, no month. cited by other
.
G. Dittmer, "Electrical Conduction and Electron Emission of
Discontinuous Thin Films," Thin Solid Films, 9, (1972) pp. 317-328,
no month. cited by other .
H. Hartwell, et al, "Strong Electron Emission From Patterned
Tin-Indium Oxide thin Films," Int'l Electron Devices Meeting (1975)
pp. 519-521, no month. cited by other .
M. Araki, "Electroforming and Electron Emission of Carbon Thin
Films," J. Vac. Soc. Japan, 26, (1983) pp. 22-29, no month. cited
by other .
K. Nakamura, et al., "Interaction of A1 layers with polycrystalline
Si", Journal of Applied Physics, vol. 46, No. 11, Nov. 1975, pp.
4678-4684. cited by other .
Hayt "Engineering Electromagnetics" 1981 McGraw Hill, Inc. p. 509,
no month. cited by other .
Elsevier Seguoia S.A., "Thin Films Solids", An International
Journal on Their Science and Technology, vol. 9 (1972) pp. 317-328,
no month. cited by other .
T. Izumiya et al., Kokai Butsuri, vol. 8, No. 4, 39-9 (1973)
(Japanese), no month. cited by other.
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Primary Examiner: Santiago; Mariceli
Attorney, Agent or Firm: Fitzpatrick, Cella, Harper &
Scinto
Parent Case Text
RELATED APPLICATION
This application is a .Iadd.reissue of U.S. Pat. No. 5,759,080,
which issued from application Ser. No. 08/479,000, which is a
.Iaddend.division of application Ser. No. 08/396,066 filed Feb. 28,
1995, now abandoned which is a continuation of application Ser. No.
08/191,065 filed Feb. 3, 1994, now abandoned, which is a
continuation of application Ser. No. 07/705,720 filed May 24, 1991,
now abandoned which is a continuation-in-part of application Ser.
No. 07/218,203 filed Jul. 13, 1988 and issued as U.S. Pat. No.
5,066,883 on Nov. 19, 1991.
Claims
We claim:
1. A method of preparing an electron-emitting device, comprising
the steps of: forming electrodes opposed to each other on a
substrate; forming between the electrodes and in contact therewith
an insulating layer in which fine particles are completely
enclosed; and etching the insulating layer so as to partially
expose the fine particles.
2. A method of preparing an electron-emitting device comprising the
steps of: forming electrodes opposed to each other on a substrate;
forming between the electrodes and in contact therewith a
semiconductor layer in which fine particles are completely
enclosed; and etching the semiconductor layer so as to partially
expose the fine particles.
3. A method of preparing an electron-emitting device, comprising
the steps of: (i) forming a semiconductor layer on a substrate;
(ii) forming electrodes on said semiconductor layer; and (iii)
dispersing fine particles between said electrodes.
4. The method of claim 3, wherein said semiconductor layer
comprises a layer comprising an amorphous silicon semiconductor, a
crystallized silicon semiconductor, or a compound
semiconductor.
5. The method of claim 3, wherein said semiconductor layer has a
film thickness of from 50 angstroms to 10 .mu.m.
.Iadd.6. A method of fabricating an electron-emitting device which
comprises a pair of electrodes and a layer disposed between the
electrodes, the method comprising the steps of: disposing the pair
of electrodes in first and second regions on a substrate,
respectively; and providing the layer between the regions, the
layer comprising a metal and a semiconductor, and being in contact
with the electrodes so that current flows from one of the
electrodes to another one of the electrodes through the layer by a
voltage applied between the electrodes, wherein the metal is
Pd..Iaddend.
.Iadd.7. The method of claim 6, wherein the semiconductor is
selected from the group consisting of carbon and
SnO.sub.2..Iaddend.
.Iadd.8. A method of fabricating an electron-emitting device,
comprising the steps of: disposing a pair of electrodes in first
and second regions on a substrate, respectively; and providing a
layer between the regions, the layer comprising carbon and a metal,
and being in contact with the electrodes so that current flows from
one of the electrodes to another one of the electrodes through the
layer by a voltage applied between the electrodes, wherein the
metal is Pd..Iaddend.
.Iadd.9. A method of fabricating an electron-emitting device,
comprising the steps of: disposing a pair of electrodes in first
and second regions on a substrate, respectively; and providing a
layer between the regions, the layer comprising carbon and a metal,
and being in contact with the electrodes so that current flows from
one of the electrodes to another one of the electrodes through the
layer by a voltage applied between the electrodes, wherein the
layer comprises primarily carbon..Iaddend.
.Iadd.10. A method of fabricating an electron-emitting device,
comprising the steps of: disposing a pair of electrodes in first
and second regions on a substrate, respectively; and providing a
layer between the regions, the layer being in contact with the
electrodes so that current flows from one of the electrodes to
another one of the electrodes through the layer by a voltage
applied between the electrodes, the layer comprising an insulating
material and at least some conductive particles which protrude from
a surface of the layer, wherein the conductive particles comprise
Pd..Iaddend.
.Iadd.11. The method of claim 10, wherein the insulating material
is SiO.sub.2..Iaddend.
.Iadd.12. A method of fabricating an electron-emitting device,
comprising the steps of: disposing a pair of electrodes in first
and second regions on a substrate, respectively; and providing a
layer between the regions, the layer comprising carbon and at least
some conductive particles, and being in contact with the electrodes
so that current flows from one of the electrodes to another one of
the electrodes through the layer by a voltage applied between the
electrodes, wherein the layer comprises primarily
carbon..Iaddend.
.Iadd.13. The method of claim 12, wherein the conductive particles
comprise a material selected from the group consisting of a metal
and a semiconductor..Iaddend.
.Iadd.14. The method of claim 13, wherein the metal is
Pd..Iaddend.
.Iadd.15. The method of any one of claims 12, 13, and 14, wherein
at least some of the conductive particles protrude from a surface
of the layer..Iaddend.
.Iadd.16. The method of any one of claims 10, 12, 13 and 14,
wherein the conductive particles are spatially separated from one
another..Iaddend.
.Iadd.17. The method of any one of claims 10, 12, 13 and 14,
wherein diameters of the conductive particles are in a range of
several tens of angstroms to several micrometers..Iaddend.
.Iadd.18. A method of fabricating an electron-emitting device,
comprising the steps of: forming an insulating layer on a first
portion of a surface of a substrate, so as to define a step-like
structure; disposing a first electrode on a second portion of the
surface of the substrate; disposing a second electrode on an upper
surface of the insulating layer; and providing a layer along a side
of the insulating layer, between the first and second electrodes,
the layer comprising a metal and a semiconductor and being in
contact with the first and second electrodes so that current flows
from the first electrode to the second electrode through the layer
by a voltage applied between the first and second
electrodes..Iaddend.
.Iadd.19. The method of claim 18, wherein the metal is
Pd..Iaddend.
.Iadd.20. The method of claim 19, wherein the semiconductor is
carbon..Iaddend.
.Iadd.21. A method of fabricating an electron-emitting device,
comprising the steps of: forming an insulating layer on a first
portion of a surface of a substrate, so as to define a step-like
structure; disposing a first electrode on a second portion of the
surface of the substrate; disposing a second electrode on an upper
surface of the insulating layer; and providing a layer along a side
of the insulating layer, between the first and second electrodes,
the layer comprising an insulating material and a conductive
material, and being in contact with the first and second electrodes
so that current flows from the first electrode to the second
electrode through the layer by a voltage applied between the first
and second electrodes..Iaddend.
.Iadd.22. The method of claim 21, wherein the conductive material
is selected from the group consisting of Pd and
SnO.sub.2..Iaddend.
.Iadd.23. The method of claim 22, wherein the insulating material
is SiO.sub.2..Iaddend.
.Iadd.24. A method of fabricating an electron-emitting device,
comprising the steps of: forming an insulating layer on a first
portion of a surface of a substrate, so as to define a step-like
structure; disposing a first electrode on a second portion of the
surface of the substrate; disposing a second electrode on an upper
surface of the insulating layer; and providing a layer along a side
of the insulating layer, between and in contact with the first and
second electrodes so that current flows from the first electrode to
the second electrode through the layer by a voltage applied between
the first and second electrodes, the layer including carbon and at
least some conductive particles..Iaddend.
.Iadd.25. The method of claim 24, wherein the layer comprises
primarily carbon..Iaddend.
.Iadd.26. The method of claim 24 or 25, wherein the conductive
particles include Pd..Iaddend.
.Iadd.27. A method of fabricating an electron source that includes
a plurality of electron-emitting devices, each electron-emitting
device comprising a pair of electrodes and a layer disposed between
the electrodes, wherein each electron-emitting device is prepared
by a method comprising the steps of: disposing the pair of
electrodes in first and second regions on a substrate,
respectively; and providing the layer between the regions, the
layer comprising Pd and a semiconductor, and being in contact with
the electrodes so that current flows from one of the electrodes to
another one of the electrodes through the layer by a voltage
applied between the electrodes..Iaddend.
.Iadd.28. A method of fabricating an electron source that includes
a plurality of electron-emitting devices, each electron-emitting
device being prepared by a method comprising the steps of:
disposing a pair of electrodes in first and second regions on a
substrate, respectively; and providing a layer between the regions,
the layer comprising carbon and Pd, and being in contact with the
electrodes so that current flows from one of the electrodes to
another one of the electrodes through the layer by a voltage
applied between the electrodes..Iaddend.
.Iadd.29. A method of fabricating an electron source that includes
a plurality of electron-emitting devices, each electron-emitting
device being prepared by a method comprising the steps of:
disposing a pair of electrodes in first and second regions on a
substrate, respectively; and providing a layer between the regions,
the layer including an insulating material and at least some
conductive particles, wherein at least some of the conductive
particles protrude from a surface of the layer, and the layer is in
contact with the electrodes so that current flows from one of the
electrodes to another one of the electrodes through the layer by a
voltage applied between the electrodes, wherein the conductive
particles comprise Pd..Iaddend.
.Iadd.30. A method of fabricating an electron source that includes
a plurality of electron-emitting devices, each electron-emitting
device being prepared by a method comprising the steps of: forming
an insulating layer on a first portion of a surface of a substrate,
so as to define a step-like structure; disposing a first electrode
on a second portion of the surface of the substrate; disposing a
second electrode on an upper surface of the insulating layer; and
providing a layer along a side of the insulating layer, between and
in contact with the first and second electrodes so that current
flows from the first electrode to the second electrode through the
layer by a voltage applied between the first and second electrodes,
the layer comprising a metal and a semiconductor..Iaddend.
.Iadd.31. A method of fabricating an electron source that includes
a plurality of electron-emitting devices, each electron-emitting
device being prepared by a method comprising the steps of: forming
an insulating layer on a first portion of a surface of a substrate,
so as to define a step-like structure; disposing a first electrode
on a second portion of the surface of the substrate; disposing a
second electrode on an upper surface of the insulating layer; and
providing a layer along a side of the insulating layer, between and
in contact with the first and second electrodes so that current
flows from the first electrode to the second electrode through the
layer by a voltage applied between the first and second electrodes,
the layer comprising an insulating material and a conductive
material..Iaddend.
.Iadd.32. A method of fabricating an electron source that includes
a plurality of electron-emitting devices, each electron-emitting
device being prepared by a method comprising the steps of: forming
an insulating layer on a first portion of a surface of a substrate,
so as to define a step-like structure; disposing a first electrode
on a second portion of the surface of the substrate; disposing a
second electrode on an upper surface of the insulating layer; and
providing a layer along a side of the insulating layer, between and
in contact with the first and second electrodes so that current
flows from the first electrode to the second electrode through the
layer by a voltage applied between the first and second electrodes,
the layer including carbon and at least some conductive
particles..Iaddend.
.Iadd.33. A method of fabricating an image forming apparatus which
includes an electron source and a phosphor plate, the electron
source including a plurality of electron-emitting devices that are
each prepared by a method according to any one of claims
27-32..Iaddend.
.Iadd.34. A method of fabricating an electron-emitting device which
comprises a pair of electrodes and a layer disposed between the
electrodes, the method comprising the steps of: disposing a pair of
electrodes in first and second regions on a substrate,
respectively; and providing the layer between the regions, the
layer being a semiconductor layer that includes a metal, and being
in contact with the electrodes so that current flows from one of
the electrodes to another one of the electrodes through the layer
by a voltage applied between the electrodes, wherein the metal is
Pd..Iaddend.
.Iadd.35. The method of claim 34, wherein the semiconductor layer
includes a semiconductor selected from the group consisting of
carbon and SnO.sub.2..Iaddend.
.Iadd.36. A method of fabricating an electron-emitting device,
comprising the steps of: forming an insulating layer on a first
portion of a surface of a substrate, so as to define a step-like
structure; disposing a first electrode on a second portion of the
surface of the substrate; disposing a second electrode on an upper
surface of the insulating layer; and providing a layer along a side
of the insulating layer, between and in contact with the first and
second electrodes so that current flows from the first electrode to
the second electrode through the layer by a voltage applied between
the first and second electrodes, the layer being a semiconductor
layer which includes a metal..Iaddend.
.Iadd.37. A method of fabricating an electron-emitting device,
comprising the steps of: forming an insulating layer on a first
portion of a surface of a substrate, so as to define a step-like
structure; disposing a first electrode on a second portion of the
surface of the substrate; disposing a second electrode on an upper
surface of the insulating layer; and providing a layer along a side
of the insulating layer, between and in contact with the first and
second electrodes so that current flows from the first electrode to
the second electrode through the layer by a voltage applied between
the first and second electrodes, the layer being an insulating
layer which includes a conductive material..Iaddend.
.Iadd.38. A method of fabricating an electron source that includes
a plurality of electron-emitting devices, each electron-emitting
device being prepared by a method comprising the steps of:
disposing a pair of electrodes in first and second regions on a
substrate, respectively; and providing a layer between the regions,
the layer comprising carbon and at least Pd particles, and being in
contact with the electrodes so that current flows from one of the
electrodes to another one of the electrodes through the layer by a
voltage applied between the electrodes..Iaddend.
.Iadd.39. A method of fabricating an electron source that includes
a plurality of electron-emitting devices, each electron-emitting
device comprising a pair of electrodes and a layer disposed between
the electrodes, each electron-emitting device being prepared by a
method comprising the steps of: disposing a pair of electrodes in
first and second regions on a substrate, respectively; and
providing the layer between the regions, the layer being a
semiconductor layer which includes Pd, and being in contact with
the electrodes so that current flows from one of the electrodes to
another one of the electrodes through the layer by a voltage
applied between the electrodes..Iaddend.
.Iadd.40. A method of fabricating an electron source that includes
a plurality of electron-emitting devices, each electron-emitting
device being prepared by a method comprising the steps of:
disposing a pair of electrodes in first and second regions on a
substrate, respectively; and providing a layer between the regions,
the layer being a carbon layer which includes Pd, and being in
contact with the electrodes so that current flows from one of the
electrodes to another one of the electrodes through the layer by a
voltage applied between the electrodes..Iaddend.
.Iadd.41. A method of fabricating an electron source that includes
a plurality of electron-emitting devices, each electron-emitting
device being prepared by a method comprising the steps of:
disposing a pair of electrodes in first and second regions on a
substrate, respectively; and providing a layer between the regions,
the layer being an insulated layer which includes at least some
conductive particles, wherein at least some of the conductive
particles protrude from a surface of the layer, and the layer is in
contact with the electrodes so that current flows from one of the
electrodes to another one of the electrodes through the layer by a
voltage applied between the electrodes, wherein the conductive
particles comprise Pd..Iaddend.
.Iadd.42. A method of fabricating an electron source that includes
a plurality of electron-emitting devices, each electron-emitting
device being prepared by a method comprising the steps of: forming
an insulating layer on a first portion of a surface of a substrate,
so as to define a step-like structure; disposing a first electrode
on a second portion of the surface of the substrate; disposing a
second electrode on an upper surface of the insulating layer; and
providing a layer along a side of the insulating layer, between and
in contact with the first and second electrodes so that current
flows from the first electrode to the second electrode through the
layer by a voltage applied between the first and second electrodes,
the layer being a semiconductor layer which includes a
metal..Iaddend.
.Iadd.43. A method of fabricating an electron source that includes
a plurality of electron-emitting devices, each electron-emitting
device being prepared by a method comprising the steps of: forming
an insulating layer on a first portion of a surface of a substrate,
so as to define a step-like structure; disposing a first electrode
on a second portion of the surface of the substrate; disposing a
second electrode on an upper surface of the insulating layer; and
providing a layer along a side of the insulating layer, between and
in contact with the first and second electrodes so that current
flows from the first electrode to the second electrode through the
layer by a voltage applied between the first and second electrodes,
the layer being an insulating layer which includes a conductive
material..Iaddend.
.Iadd.44. A method of fabricating an image forming apparatus which
includes an electron source and a phosphor plate, the electron
source including a plurality of electron-emitting devices that are
each prepared by a method according to any one of claims
38-43..Iaddend.
.Iadd.45. A method of fabricating an electron-emitting device,
comprising the steps of: disposing a pair of electrodes in first
and second regions on a substrate, respectively; and providing a
layer between the regions, the layer comprising carbon and a metal
particle, and being in contact with the electrodes so that current
flows from one of the electrodes to another one of the electrodes
through the layer by a voltage applied between the electrodes,
wherein a diameter of the metal particle is in a range of several
tens of angstroms to several micrometers..Iaddend.
.Iadd.46. The method of claim 45, wherein the metal particle
comprises Pd..Iaddend.
.Iadd.47. A method of fabricating an electron-emitting device,
comprising the steps of: disposing a pair of electrodes in first
and second regions on a substrate, respectively; and providing a
layer between the regions, the layer comprising carbon and at least
some conductive particles, and being in contact with the electrodes
so that current flows from one of the electrodes to another one of
the electrodes through the layer by a voltage applied between the
electrodes, wherein diameters of the conductive particles are in a
range of several tens of angstroms to several
micrometers..Iaddend.
.Iadd.48. The method of claim 47, wherein the conductive particles
comprise Pd..Iaddend.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to an electron-emitting device, and a
method of preparing it.
2. Related Background Art
Hitherto known as a device achievable of emission of electrons with
use of a simple structure is the cold cathode device published by
M. I. Elinson et al. (Radio Eng. Electron. Phys., Vol. 10, pp.
1290-1296, 1965.
This utilizes the phenomenon in which electron emission is caused
by flowing an electric current to a thin film formed with a small
area on a substrate and in parallel to the surface of the film, and
is generally called a surface conduction electron-emitting
device.
This surface conduction electron-emitting device that has been
reported includes those employing a SnO.sub.2(Sb) thin film
developed by Elinson et al. named in the above, those employing an
Au thin film (G. Dittmer, "Thin Solid Films", Vol. 9, p.317, 1972),
those employing an ITO thin film. (M. Hartwell and C. G. Fonstad,
"IEEE Trans. ED Conf.", p.519, 1975), and those employing a carbon
thin film .[.[Hisashi Araki, et al. "SHINKU" (Vacuum), Vol. 26, No.
1, p.22, 1983]..]. .Iadd.(Hisashi Araki, et al. "SHINKU" (Vacuum),
Vol. 26, No. 1, p.22, 1983)..Iaddend.
Typical device constitution of these surface conduction
electron-emitting devices is shown in FIG. 38. In FIG. 38, the
numerals 19 and 20 denote electrodes for attaining electrical
connection; 21, a thin film formed using an electron-emitting
material; 23, a substrate; and 22, an electron-emitting region.
In these surface conduction electron-emitting devices, it has been
hitherto practiced to previously form the electron-emitting region
by an energizing heat treatment, called "forming", before effecting
the electron emission. More specifically, a voltage is applied
between the above electrode 19 and electrode 20 to energize the
thin film 21 to bring the thin film 21 to be locally destroyed,
deformed or denatured owing to the Joule heat thereby generated,
thus forming the electron-emitting region 22 kept in a state of
electrically high resistance to obtain an electron-emitting
function.
What is meant by the above state of electrically high resistance is
a discontinuous state of a film partly having cracks of 0.5 .mu.m
to 5 .mu.m on the thin film 21 and having the so-called island
structure inside the cracks. What is meant by the island structure
is the structure of a film in which fine particles generally having
a diameter of several ten angstroms to several micrometers are
present on the substrate, and the respective fine particles are
spatially discontinuous and electrically continuous.
Hithertofore, in the surface conduction electron-emitting devices,
a voltage is applied to the above high-resistance discontinuous
film by the electrodes 19 and 20 to flow an electric current to the
surface of the device, so that the electrons are emitted from the
above fine particles.
However, the forming according to the conventional energizing heat
treatment as mentioned above has involved the problems as follows:
(1) In carrying out the energizing heating, it sometimes occurs
that the thin film is peeled because of the difference in
coefficient of thermal expansion between the substrate and the thin
film. This provides limitations in upper limit of heating
temperature, materials for the substrate, and combination by
selection of materials for the thin film. (2) In carrying out the
energizing heating, the substrate also is locally heated, therefore
sometimes resulting in occurrence of fatal cracking therein. (3)
Degree of the changes of a film owing to the energizing heating, as
exemplified by the degree of local destruction, deformation or
denaturing, tends to become irregular among a plurality of devices
formed in the same substrate, and also the site at which changes
may occur tends to be not fixed.
For this reason, when functioning as an electron-emitting device,
irregularity in the shape of beams of emitted electrons has been
seen for each device. (4) A relatively large electric power is
required until the forming is completed. For this reason, an
electric source of large capacity is required when a number of
devices are formed on the same substrate and the forming is carried
out simultaneously. (5) A relatively long period of time is
required for conventional forming processes that start with the
energizing heating and end with cooling. For this reason, an
excessively long time is required for carrying out the forming of a
number of devices.
Because of the problems as set out above, the surface conduction
electron-emitting devices have not been positively applied in
industrial fields, notwithstanding their advantages that the device
has simple construction.
SUMMARY OF THE INVENTION
The present invention was made to eliminate the disadvantages in
the prior art as discussed above, and an object thereof is to
provide an electron-emitting device that can have, without applying
the treatment called forming, a quality more than equal to that of
electron-emitting devices obtained by the forming, and has a novel
structure suffering less irregularity of characteristics, and a
method for preparing it.
More specifically, the present invention firstly provides a means
for preparing the device by controlling the above-mentioned shape
and width of cracks without use of the forming means, and with
ease, and provides an electron-emitting device with regular
characteristics, prepared by the method using the means.
It secondly provides a means for making uniform the structure and
size corresponding to the island structure in the cracks mentioned
above, and provides an electron-emitting device having regular
characteristics by using the means.
A further object of the present invention is to provide an
electron-emitting device capable of controlling the above
characteristics and also capable of better controlling the position
of the electron-emitting region, and a method for preparing such a
device.
A still further object of the present invention is to provide an
electric current emitting device that not only can solve the
problems previously mentioned, but also can make lower the voltage
to be applied to electrodes and achieve improvement in the density
of an emitted electric current.
According to an aspect of the present invention, there is provided
an electron-emitting device comprising a laminate comprising an
insulating layer held between a pair of electrodes opposing each
other, wherein an electron-emitting region insulated from said
electrodes is formed at a side end surface of the insulating layer
formed at the part at which the electrodes oppose each other, and
electrons are emitted from said electron-emitting region by
applying a voltage between said electrodes.
According to another aspect of the present invention, there is
provided an electron-emitting device comprising a device structure
in which an insulating layer is formed between opposing electrodes,
and fine particles are arranged inside the layer of said insulating
layer in a dispersed state.
According to a further aspect of the present invention, there is
provided an electron-emitting device comprising the device
structure that a semiconductor layer is formed between opposing
electrodes, and fine particles are arranged inside the layer, or on
the layer, of said semiconductor layer in a dispersed state.
A further object of the present invention is to provide a display
device comprising an electron-emitting device comprising a laminate
having an insulating layer disposed between opposing electrodes on
a planar substrate, the insulating layer having an
electron-emitting region spaced apart from the electrode, wherein a
first portion of the insulating layer is disposed between one of
the electrodes and the planar substrate, and the electron emitting
region is disposed to the first portion, wherein electrons are
emitted from the electron-emitting region by applying a voltage to
the electrodes, and wherein a phosphorous emits light by a
stimulation of the electrons emitting from the electron-emitting
device.
A further object of the present invention is to provide a display
device comprising an electron-emitting device in which
electron-emitting material comprising the electron-emitting region
are in a dispersant state.
A further object of the present invention is to provide a display
device comprising an electron-emitting device in which the
electron-emitting material comprising the electron-emitting region
are at least two kinds of fine particles of materials having
different conductivities.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a cross-section illustrating an embodiment of a vertical
type electron-emitting device of the present invention.
FIG. 2 is a cross-section illustrating another embodiment of a
vertical type electron-emitting device of the present
invention.
FIGS. 3(a) and 3(b) illustrate an example for a method of preparing
the electron-emitting device of the present invention.
FIG. 4 is a cross-section illustrating an embodiment of a vertical
type electron-emitting device of the present invention.
FIG. 5 is a cross-section illustrating still another embodiment of
a vertical type electron-emitting device of the present
invention.
FIGS. 6a and 6b illustrate examples for a method of preparing an
embodiment of an electron-emitting device of the present
invention.
FIG. 7 illustrates a further step in a method of preparing an
embodiment of an electron-emitting device of the present
invention.
FIG. 8 is a perspective view illustrating an electron-emitting
device of the present invention having an insulating layer
comprising fine particles arranged in a dispersed state;
FIG. 9 and FIG. 10 are cross sections along line A in FIG. 8;
FIGS. 11(A) to 11(E) are cross-sections illustrating the
preparation steps of an electron-emitting device of the present
invention;
FIG. 12 illustrates a preparation step of an electron-emitting
device of the present invention.
FIGS. 13(a) and 13(b) illustrate preparation steps of another
embodiment of an electron-emitting device of the present
invention.
FIGS. 14(A) to 14(E) are cross-sections illustrating each of the
preparation steps of another embodiment of an electron-emitting
device of the present invention.
FIGS. 15(a) and 15(b) illustrate preparation steps of another
embodiment of an electron-emitting device of the present
invention.
FIGS. 16(a) and 16(b) illustrate preparation steps of another
embodiment of an electron-emitting device of the present
invention.
FIGS. 17 and 18 diagnostically illustrate an electron-emitting
device of the present invention having a semiconductor layer
comprising fine particles arranged in a disposed state.
FIGS. 19(A) to 19(C) are cross-sections illustrating an
electron-emitting device of the present invention for each
preparation step.
FIG. 20 diagrammatically illustrates an embodiment of an
electron-emitting device of the present invention having a
semiconductor layer comprising fine particles arranged in a
dispersable state.
FIGS. 21 and 22 diagrammatically illustrate other embodiments of an
electron-emitting device of the present invention.
FIGS. 23(A) to 23(D) illustrate the step in the preparation of an
embodiment of an electron-emitting device of the present
invention.
FIGS. 24 and 25 are cross-sections illustrating embodiments of an
electron-emitting device or the present invention.
FIGS. 26(A) to 26(E) are cross-sections illustrating the
preparation steps of an embodiment of an electron-emitting device
of the present invention. FIG. 27 illustrates another embodiment of
an electron-emitting device of the present invention.
FIGS. 28(a) to 28(c), FIGS. 29(a) to 29(c), and FIGS. 30(a) to
30(d) illustrate preparation steps in other embodiments of an
electron-emitting device of the present invention.
FIG. 31 illustrates another embodiment of an electron-emitting
device of the present invention.
FIGS. 32(a) and 32(b); FIGS. 33(a) to 33(d) and FIGS. 34(a) to
34(d) illustrate the preparation steps in other embodiments of an
electron-emitting device of the present invention.
FIGS. 35 and 36 diagrammatically illustrate an electron-emitting
device according to other embodiments of specific structures of the
present invention.
FIGS. 37(a) and 37(b) illustrate an electron-emitting device
comprising two kinds of fine particles arranged in a dispersed
state; and
FIG. 38 is a view illustrating a conventional electron-emitting
device
FIG. 39A is partially cutaway perspective view illustrating the
structure of a display panel.
FIG. 39B illustrates an example of the display device having
electrodes 1 and 2 juxtaposed on a surface of a substrate.
FIG. 39C illustrates an example of the display device in which
electrodes 1 and 2 are laminated on a substrate.
FIG. 39D illustrates an upper view of the laminate in FIG. 39 A
formed of three layers.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
More specifically, the present invention is an electron-emitting
device comprising a laminate comprising an insulating layer
disposed between a pair of opposing electrodes, wherein an
electron-emitting region insulated from the electrodes is provided
at a side end surface of the insulating layer formed at the part at
which the electrodes oppose each other, and electrons are emitted
from the electron-emitting region by applying voltage between the
electrodes.
FIG. 1 diagrammatically illustrates a first embodiment of the
electron-emitting device of the present invention. In the figure,
the numerals 1 and 2 denote electrodes for obtaining electrical
connection; 3, an electron-emitting region; 4, a substrate; and 5,
an insulating layer.
In FIG. 1, the electron-emitting device of the present invention
comprises a laminate comprising the insulating layer 5 disposed
between a pair of the electrodes 1 and 2 opposing each other at
their end portions, wherein the electron-emitting region 3
insulated from the electrodes is provided at a side end surface of
the insulating layer 5 formed at the opposing part at which the
electrodes 1 and 2 oppose each other, and electrons are emitted
from the electron-emitting region 3 by applying voltage between the
electrodes 1 and 2.
In the above electron-emitting device, the one corresponding to the
narrow crack in the prior art can depend on the film thickness of
the insulating layer 5. More specifically, as illustrated in FIG.
1, taking the structure that a pair of the electrodes are formed
above and beneath the insulating layer with respect to the
direction of the lamination in which the insulating layer having
the electron-emitting region is laminated to the substrate
(hereinafter referred to as "vertical type structure") can make
small the thickness of the insulating layer on which the spacing
between electrodes depend.
The electron-emitting device having the vertical type structure has
a quality more than equal to that of conventional ones without
taking the forming means, and can give a more improved
electron-emitting device that can make uniform the shape and width
of the electron-emitting region.
In FIG. 1, the insulating layer 5 may have a thickness of from
several angstroms to several microns, for example, from 10
angstroms to 10 microns, preferably from 10 to 1 .mu.m.
The insulating layer 5 is comprised of SiO.sub.2, MgO, TiO.sub.2,
Ta.sub.2O.sub.5, Al.sub.2O.sub.3 or the like, a laminated material
of any of these, or a mixture of any of these, which is formed by
vacuum deposition or coating. Alternatively, when the electrode 1
is comprised of a metal such as Al and Ta, the insulating layer 5
may comprise an anodic oxidation film anodized by electrolysis.
The substrate 4 is formed with glass, ceramics or the like, and the
electrodes 1 and 2 are formed with Au, Ag, Cu, Mo, Cr, Ni, Al, Ta,
Pd, W or the like, or an alloy of any of these, or carbon, etc.
The electrodes 1 and 2 may have a thickness of from several hundred
angstroms to several .mu.m, preferably from 0.01 to 2 .mu.m in the
case of the vertical type. Formation methods include vacuum
deposition, photolithography, and printing.
An outline of the method of preparing the electron-emitting device
according to the present invention can be specifically described
based on FIG. 1 as follows:
The electrode 1 is vapor deposited on the substrate 4, and then
subjected to patterning to give a desired shape as exemplified by a
stripe. Thereafter, the insulating layer 5 is formed by means of
vacuum deposition, coating or the like. Thickness of the insulating
layer depends on the dielectric strength depending on materials for
the insulating layer, and the threshold voltage at which emission
of electrons begins by the voltage applied between the electrodes 1
and 2. Usually, to set the threshold voltage to from 10 to 20 V,
this film thickness must be 1 micron or less. After formation of
the insulating layer 5, the electrode 2 is formed by conventional
vacuum deposition, printing, coating or the like process, and then
the electrode 2 and the insulating layer 5 are so subjected to
patterning along the pattern of the electrode 1 that they may
partly overlap with the electrode 1 in the same pattern (See FIG.
1.). .[.in.]. .Iadd.In .Iaddend.that occasion, the
electron-emitting region 3 may be obtained by disposing an
electron-emitting layer 3a between the insulating layers 5a and 5b
according to the manner as described later, or may be obtained by
disposing electron-emitting bodies 3b at the side face of the
insulating layer 5.
Good results can also be exhibited not only by taking the structure
in which the electrodes 1 and 2 overlap as shown in FIG. 1, but
also by an electron-emitting device comprising the
electron-emitting region 3 disposed at a side end surface defined
between a pair of electrodes 1 and 2 that oppose at their end
portions but have no overlap as shown in FIG. 2
The electron-emitting region 3 is formed by disposing an
electron-emitting layer 3a in the insulating layer 5 comprised of a
material readily capable of field emission of electrons, a material
readily capable of secondary electron emission, or a material
readily capable of emitting electrons by electron bombardment and
having strong thermal resistance and corrosion resistance, as
exemplified by metals such as W, Ti, Au, Ag, Cu, Cr, Al and Pt,
oxides such as SnO.sub.2, In.sub.2O.sub.3, BaO and MgO, or carbon
or a mixture of any of the above, each having a low work function
and high thermal resistance, utilizing vacuum deposition, coating,
sputtering deposition, dipping, or the like process.
Alternatively, it may comprise a thin coating comprising superfine
particle powder of metals as exemplified by Au, Ag, Cu, Cr and Al,
or can be also formed by arranging electron-emitting bodies 3b at
the side face of the insulating layer 5 comprising a thin coating
of the material as described for the above electron-emitting layer
3a. (Utilizable coating methods include spreading, all sorts of
vacuum deposition, and dipping.)
Electrode spacing 6 in FIG. 1 and FIG. 2 somewhat differs, but in
approximation may desirably be formed in from several ten angstroms
to several .mu.m, preferably from several ten angstroms to 2 .mu.m,
and more preferably from 10 angstroms to 1 .mu.m.
An outline of a method for preparing the electron-emitting device
illustrated in FIG. 2 will be described below.
An insulating layer 5 is formed on a substrate 4, and a stepped
portion is formed by patterning. Thereafter the electrodes 1 and 2
are simultaneously formed into films so that the stepped portion
may not be covered by the electrodes, thus forming the electrode
spacing 6. Accordingly, the electrode spacing 6 depends on
thickness of the electrode formed at the stepped portion set with
the film thickness of the insulating layer 5. The film formation of
this electrode is carried out usually by using vacuum film
formation or a similar process, so that it is possible to control
the film thickness in high precision. Thus, for the electrode
spacing 6, small spacing of several ten angstroms can be readily
obtained in high precision.
The stepped portion at which the electrode spacing 6 is formed can
also be obtained by pattern etching of the substrate 4 itself,
without using the insulating layer 5. There is also available a
method in which the electrodes 1 and 2 are formed on this stepped
portion to obtain an electron-emitting device. (See FIG. 7.)
Taking the structure that a pair of the electrodes opposing each
other have no mutual overlap as illustrated in FIG. 2 can bring
about a more superior electron-emitting device suffering less
increase in driving power consumption that may be otherwise caused
by increase in the electrical capacity at the part at which the
electrodes overlap, less delay of driving electric signals, and
less influence by dielectric strength or pinholes of the insulating
layer.
On the other hand, the electron-emitting device having the
structure as shown in FIG. 7 makes it unnecessary for the
electrodes to be held by the insulating layer, and makes it
possible also to obtain the spacing of the opposing electrodes by
utilizing the stepped portion, so that if, for example, the
electrode-supporting substrate itself is etched to provide the
stepped portion, there is given an electron-emitting device that
can be obtained without formation of any insulating layer, making
simple its preparation processes.
The electron-emitting device of the present invention may further
have the structure as shown in FIG. 4.
In FIG. 4, the numerals 1 to 5 denote the same as those in FIG. 3.
In the present figure, the numeral 8 denotes an intermediate layer,
which is disposed between the insulating layer 5 and the electrode
2 to constitute a multi-layer electrode. The intermediate layer 8
plays a role to bring about the effect of preventing sputtering
damage caused by electrons or ions in the electrode 2, or the
effect of bringing electrons to more readily emit. As the
intermediate layer 8, high-melting materials as exemplified by W,
LaB.sub.6, carbon, TiC and TaC may be used to make small the
sputtering damage, and materials having a low work function as
exemplified by SnO.sub.2, In.sub.2O.sub.3, LaB.sub.6, BaO, CS and
CSO may be used to achieve improvement in electron emission
efficiency.
There may be also used a laminate, or a mixture, comprising both
these materials. Of course, similar effect can be obtained also
when the intermediate layer 8 is provided on the electrode 1 to
give a multi-layer electrode. Further, when both the electrodes are
made to comprise the multi-layer electrode, suitable materials for
the intermediate layer 8 can be selected for each electrode. Also,
a laminate comprising an insulating layer 5a, an electron-emitting
layer 3a and an insulating layer 5b may be made to comprise a
multi-layer laminate constituted of, for example, an insulating
layer 5a, an electron-emitting layer 3a, an insulating layer 5b, an
electron-emitting layer 3a, an insulating layer 5a, and an
electron-emitting layer 3a. At least one layer of the multi-layer
electrodes, as exemplified by the electrode 2 in FIG. 4, may
further preferably be comprised of a material having a high
electrical conductivity. This is because the materials for the
intermediate layer 8 are materials having relatively low electrical
conductivity as for electrode wiring materials.
An excessively high wiring resistance of a device may cause an
increase in the power consumption or a delay in the driving
signals, resulting in undesirableness in driving the device. For
this reason, the materials having high electrical conductivity are
used in the electrode 2 to keep to a low level the wiring
resistance of the whole multi-layer electrode. Usable as the
materials having high electrical conductivity are Ag, Al, Cu, Cr,
Ni, Mo, Ta, W, etc.
In FIG. 4, when the electron-emitting layer 3a comprises the
material suffering less sputtering damage or having a low work
function, the intermediate layer 8, or the electrode 1 and the
intermediate layer 8, may be formed with use of the same materials
as in the electron-emitting layer 3a.
The present invention further provides an electron-emitting device
having a device structure wherein an insulating layer is formed
between electrodes opposing each other, and fine particles are
contained in said insulating layer and at the same time arranged in
a dispersed state.
Taking the above described device structure of the present
invention not only can solve the problems in the prior art
previously discussed, but also can provide an electron-emitting
device capable of obtaining an emitted electric current of high
density by using a low electric power and also capable of
controlling the island spacing and island size of the islands
previously mentioned. This electron-emitting device will be
described below with reference to the drawings.
In FIG. 8, provided on a substrate 4 such as glass and ceramics is
an insulating layer 11, and further thereon electrodes 1 and 2
comprised of low-resistance materials for use in voltage
application are provided giving minute spacing to form a
discontinuous electron-emitting region 10 comprising fine particles
9 dispersed between them. Though not shown in the drawing, a space
is taken at an upper area of the electron-emitting region to
provide there a lead-out electrode for leading out emitted
electrons. Application of voltage between the electrodes 1 and 2 in
vacuo (this voltage is assumed as V.sub.f) brings about flow of
electricity between the electrodes (L.sub.f) to apply voltage using
the lead-out electrode as the anode, so that electrons are emitted
from the electron-emitting region in the direction substantially
vertical to the paper surface in the drawing. (The electric current
for this electron emission is assumed as I.sub.e.)
FIG. 9 and FIG. 10 diagrammatically illustrate cross sections in
the A-B direction in FIG. 8. In the present figures, the fine
particles on the substrate 4 may preferably have a particle
diameter of from several ten angstroms to several .mu.m, and the
spacing between respective fine particles may further preferably be
formed in the range of from several ten angstroms to several
.mu.m.
Materials for the fine particles used in the present invention may
cover a very wide range, and almost all of conductive materials
including usual metals, semimetals and semiconductors. Particularly
suitable are usual cathode materials having properties such as low
work function, a high melting point and low vapor pressure, thin
film materials capable of forming the surface conduction
electron-emitting device by the conventional forming treatment, and
materials having a large coefficient of secondary electron
emission.
Appropriate materials may be selected from such materials according
to purposes and used as the fine particles, so that a desired
electron-emitting device can be formed.
Specifically, they may include, for example, borides such as
LaB.sub.6, CeB.sub.6, YB.sub.4, and GdB.sub.4, carbides such as
TiC, ZrC, HfC, TaC, SiC and WC, nitrides such as TiN, ZrN and HfN,
metals such as Nb, Mo, Rh, Hf, Ta, W, Re, Ir, Pt, Ti, Au, Ag, Cu,
Cr, Al, Co, Ni, Fe, Pb, Cs and Ba, metal oxides such as
In.sub.2O.sub.3, SnO.sub.2 and Sb.sub.2O.sub.3, semiconductors such
as Si and Ge, carbon, and AgMg. The present invention is by no
means limited by the above materials. Moreover, in the present
invention, it may also be practiced to select different materials
among the above materials and disperse fine particles of two or
more kinds of different materials.
A method for preparing the device illustrated in FIG. 8 will be
described below.
FIGS. 11(A) to (E) illustrate cross sections of a device for each
preparation step. (1) The surface of a substrate 4 comprised of
glass or ceramics is degreased and cleaned. (2) An insulating layer
11 comprised of low-melting point glass is formed into a film on
the surface of the substrate 4 according to liquid-coating baking,
printing baking, vacuum deposition, or the like process. Desirable
as materials for the low melting point glass are those having a
softening point temperature lower than the distortion point
temperature of the substrate and at the same time having a
coefficient of thermal expansion close to that of the substrate. In
general, a lead oxide type low melting glass has a softening point
of about 400.degree. C. and also has a coefficient of thermal
expansion close to the coefficient of thermal expansion of a soda
lime glass substrate generally used. The insulating layer 11 may
desirably be formed to have a thickness in the range of from
several ten angstroms to several ten .mu.m in approximation. (3) On
the insulating layer obtained in (2), electrodes 1 and 2 are formed
according to vacuum deposition, photolithoetching, lifting-off,
printing, or the like process. Usable as electrode materials are
the same materials as those described in relation to FIG. 1, i.e.
Au, Ag, Cu, Mo, Cr, Ni, Al, Ta, Pd and W, or an alloy of any of
these or carbon, etc., and the electrodes 1 and 2 may also suitably
have a thickness of from several hundred angstroms to several
.mu.m, preferably from 0.01 to 2 .mu.m.
As to the dimension of electrode spacing L, the electrodes may
suitably oppose each other with a space of from several hundred
angstroms to several ten .mu.m, and spacing width W may suitably be
approximately from several .mu.m to several mm. However, they are
by no means limited to these dimensions. (4) Next, the fine
particles 9 are coated on the electrode gap region obtained in (3).
A dispersion of fine particles is used in the coating. Fine
particles and an additive to promote dispersion of the fine
particles are added in an organic solvent comprised of butyl
acetate, alcohol or the like, followed by stirring or the like to
prepare the dispersion of fine particles. This fine particle
dispersion is coated on the surface of a specimen according to
dipping, spin coating or the like process, and then calcination is
carried out for about 10 minutes at a temperature at which the
solvent or the like may be evaporated, for example, at 250.degree.
C. Thus the fine particles are arranged on the surface of the
insulating layer 11 in the electrode spacing 1. Of course, the fine
particles 9 are arranged on the whole surface of the specimen, but
no difficulty is brought about as there is applied substantially no
voltage to the fine particles 9 outside the electrode spacing L
when electrons are emitted. This is accordingly not shown in the
drawing. Arrangement density of the fine particles 9 may vary
depending on the coating conditions and how to prepare the fine
particle dispersion, and the amount of electric currents flowing to
the electrode spacing L may also vary in accordance with this. In
addition to the above formation by coating, also available as a
method for dispersing the fine particles 9 to the electrode gap
region obtained in (3) is, for example, a method in which a
solution of an organic compound is coated on the substrate followed
by thermal decomposition to form metal particles. In regard to
materials feasible for vacuum deposition, the fine particles can be
also formed by control of vacuum deposition conditions such as
substrate temperature or by a means like vacuum deposition such as
masked vacuum deposition. (5) After this, the specimen obtained
through the steps up to (4) is heated to a temperature higher than
the softening point of the low-melting glass constituting the
insulating layer 11, for example, to 450.degree. C. if it is the
lead oxide type low-melting glass, to carry out baking for about 20
minutes. By this procedure, the fine particles 9 arranged on the
insulating layer 11 comprised of the low-melting glass penetrate
into the low-melting glass, resulting in being included (or
enclosed) into the insulating layer 11, or included to the extent
that at least part of a particle is exposed from the insulating
layer 11, and then fixed there. Whether the fine particles 9 are
brought into the state that all of them are included into the
insulating layer 11 or the state that only part of a particle
penetrates into the insulating layer 11 in the state that the
surface remains exposed, may be adjusted by selecting the baking
temperature in the step (5).
The higher the baking temperature is, the more readily the fine
particles 9 are penetrated deeply into the insulating layer 11, and
are included and fixed. A lower baking temperature may make it
difficult for the fine particles 9 to penetrate into the insulating
layer 11, and tend to make them fixed in the exposed form.
Some of the materials such as Pd listed in the above embodiment may
be covered on their surfaces with oxide films as a result of
heating in the above step (5), resulting in decrease in the amount
of the electric current flowing to the electrode spacing L.
Therefore, a step of pickling to remove the oxide film may be
introduced if necessary.
In the present invention, the device may also be formed by bringing
the fine particles 9 to be completely included into the insulating
layer 11 and thereafter carrying out etching to bring part of each
particle to be exposed.
Not only the device prepared according to the above preparation
steps having the structure as illustrated in FIGS. 11(A)-11(E), but
also the devices having the structure illustrated in FIG. 12 and
FIGS. 13(a) and (b) can also exhibit good results.
Preparation processes in FIG. 12 will be described.
Electrodes 1 and 2 are formed on a substrate 4, on which a fine
particle dispersion or a dispersion prepared by mixing low-melting
frit glass into an organic metal compound solution is coated in the
vicinity of the electrode spacing region L, followed by baking at a
temperature higher than the softening point of the low-melting frit
glass crystalline melting point to bring the fine particles to be
included into an insulating layer 11 comprised of the low-melting
glass, or bring at least part thereof to be exposed, and then
fixed. Here, the baking temperature set to a higher degree (as
exemplified by 650.degree. C. enables the smoothing of the
insulating layer 11 to make a continuous film.
In the figure, the insulating layer 11 may preferably be formed to
have a film thickness of from several ten angstroms to several
.mu.m in approximation.
Here, a liquid coating insulating layer (as exemplified by Tokyo
Ohka OCD, a SiO.sub.2 insulating layer) may be used in place of the
low-melting frit glass.
In the instance where the liquid coating insulating layer is used,
it is also possible to obtain the electron-emitting device of the
present invention in the following manner: First, the insulating
layer 11 containing the fine particles 9 is built up on the
substrate 4 according to liquid coating. Namely, it can be obtained
by coating the fine particles mixed and dispersed in a liquid
coating preparation, on a substrate by spin coating, dip coating or
the like.
Next, electrodes are formed on the insulating layer 11 according to
the above processes such as vacuum deposition to make up an
electron emission device.
Taking said process, the fine particles are coated on the substrate
in the state that they are mixed and dispersed in the liquid
coating preparation or the like for obtaining the insulating layer,
and therefore, even after the coating and baking, they remain
dispersed in a good state in the film formed by coating the liquid
coating preparation for obtaining the insulating layer.
Accordingly, the fine particles suffer less agglomeration, and can
be uniformly dispersed in the insulating layer obtained by the
liquid coating preparation.
Also, since in the present structure the insulating layer
containing fine particles is first formed on the substrate, the
substrate surface before formation of the insulating layer is
usually a uniform surface without any particular pattern or
roughness. Accordingly, since the insulating layer containing the
fine particles in its uniform surface is formed by coating and
baking, there is no non-uniformity in the film thickness or fine
particle dispersion owing to coating uneveness at the part of the
pattern or roughness, so that a support layer in which the fine
particles are dispersed can be uniformly formed on the substrate
surface. Obtaining the insulating layer that is uniform like this
can make small the irregularity or the like in device
characteristics when a number of electron-emitting devices are
provided on the same substrate.
Moreover, although in the present structure an in-air heating step
at about 400.degree. C. or more becomes necessary, for example,
when the oxide type insulating layer is formed using the liquid
coating preparation, the electrodes themselves do not pass through
the heating step because the insulating layer formation heating is
carried out before formation of the electrodes. Therefore, no
account is required to be taken for the thermal oxidation of
electrodes or thermal diffusion with respect to the insulating
layer, thus enabling expansion of the range of selection for
electrode materials.
Accordingly, the materials may be appropriately selected depending
on the conditions such as dielectric strength, thermal resistance,
workability, oxidation resistance, life, specific resistance, and
amount of electric current that can be taken out. The materials for
the insulating layer may include, as previously described.
SiO.sub.2, MgO, TiO.sub.2, Ta.sub.2O.sub.5 and Al.sub.2O.sub.3, or
a laminate or mixture of any of these. The film thickness may be
from about 10 angstroms to several .mu.m or so, which is the
thickness necessary for the fine particles 9 to be dispersed and
fixed.
The electron-emitting device may also have the structure as
illustrated in FIG. 13(a) and 13(b).
In the electron-emitting device illustrated in FIG. 13, a fine
particle dispersion prepared by mixing the low-melting frit glass
for the insulating layer 11 is coated (here, carried out in the
same manner as described in relation to FIG. 12), and thereafter
the insulating layer 11 is formed into a discontinuous
island-shaped film by setting the baking temperature to somewhat
lower degree (for example, about 500.degree. C.).
In the electron-emitting device illustrated in FIG. 13, the
insulating layer 11 does not entirely cover the electrode spacing L
as so illustrated in the figure, so that it takes the form that the
electrode ends of the electrodes 1 and 2, on the side of the
electrode space L, i.e., the part at which a highest electric field
is generated, is connected with the surface and inside of the
insulating layer 11. For this reason, the degree of freedom of the
electric current flow path becomes greater, so that the amount of
electric current flowing between the electrodes can be more
increased than the device of FIG. 12.
Both the electron-emitting device of FIG. 12 and the
electron-emitting device of FIGS. 13(A) and 13(B), in which the
insulating layer and the fine particles can be formed
simultaneously, have the advantage that the preparation steps can
be simplified.
The electron-emitting device of the present invention may further
comprise a device having the structure as illustrated in FIG.
14(E).
In FIG. 14(E), the numeral 4 denotes a substrate; 1 and 2,
electrodes; 9, fine particles; and 11, an insulating layer.
FIGS. 14(A) to (E) illustrate cross sections of a device for each
preparation step. 1) The surface of the substrate 4 is degreased
and cleaned. 2) The electrodes 1 and 2 are formed in the same
manner as in FIG. 11C. 3) The fine particles are dispersed in the
same manner as in FIG. 11D. 4) The insulating layer 11 is formed by
a method of EB vacuum deposition, sputtering, or vacuum deposition
such as plasma CVD, heat CVD or the like process. Usable as
materials for the insulating layer 11 are oxides such as SiO.sub.2
and Al.sub.2O.sub.3, nitrides such as Si.sub.3N.sub.4, carbides
such as SiC and TiC, as well as glass obtained by vacuum deposition
or solution-coated baking, and insulating layers comprising organic
polymers such as polyimides. Also the layer 11 may desirably have a
film thickness of from several 10 angstroms to several .mu.m. Here,
in general, the insulating layer 11 is deposited also on the
surface of fine particles 9, and so deposited that the particle
diameters of the fine particles 9 may produce convexes.
The electron emission device prepared according to the above steps
1) to 4) can serve as a device having far superior characteristics
as compared with the conventional devices prepared using the
forming. In the electron-emitting device of the present invention,
even the device obtained according to the steps 1) to 4) can
exhibit sufficiently good characteristics, but more preferred is a
device applied with the following step 5), since the extent of
exposure of the fine particles fixed in the insulating layer can be
made adjustable by adjusting the deposit thickness of the
insulating layer and the amount of etching, and furthermore it
becomes possible to control the electric current between electrodes
and also control the amount of electron emission. 5) Etching is
applied on the surfaces of the convexes of the insulating layer 11
obtained in 4). For example, ion milling may be carried out in the
state that the specimen is obliquely set, so that the surfaces of
the convexes of the insulating layer 11 are etched. As a result,
there is given the structure that part of each fine particle 9 is
exposed from the insulating layer 11 at the etched portions and
also fixed in the insulating layer 11.
In addition, in the above steps 1) to 5), the low-melting glass may
be used as the material for the insulating layer 11 and, after step
5) in FIG. 14E, the specimen may be baked at a temperature higher
than the softening point of the low-melting glass, so that the fine
particles 9 can be further firmly fixed in the insulating layer 11
comprised of the low-melting glass. This makes it possible to
provide a further stable electron-emitting device.
The electron-emitting device of the present invention may also
comprise those as illustrated in FIGS. 15(a) and (b) and FIGS.
16(a) and (b).
In FIG. 15, the numeral 12 denotes a substrate comprising metals 13
such as Ag, Ba, Pb, W and Sn or metal oxides 13 such as BaO, PbO
and SnO.sub.2 deposited in porous glass. The numerals 1 and 2
denote electrodes provided on the substrate.
Usable as the above porous glass are Vycor glass available from
Corning Glass Works or porous glass MPG available from Asahi Glass
Co., Ltd., and those having a pore size of from 40 angstroms to 5
.mu.m, more preferably having a pore size of from 100 angstroms to
0.5 .mu.m. Fine particles of metals or metal oxides of the size
equal to or smaller than the pore size are deposited in the pores.
The present embodiment may not be limited to the porous glass, and
may be worked using those obtained by roughening the glass surface
with an aqueous hydrofluoric acid solution or other porous
insulating substrates.
Bringing metals to be deposited and fixed in the pores of porous
glass can be achieved by commonly available methods as exemplified
by a method in which porous glass is impregnated with an aqueous
solution of a nitrate such as AgNO.sub.3, Ba(NO.sub.3).sub.2 and
PbNO.sub.3 or an aqueous sulfuric acid solution, followed by drying
and thereafter baking in a reducing atmosphere. To deposit the
metal oxides, the deposited metals may be baked at a suitable
temperature and in an atmosphere of oxygen.
In bringing the metals or metal oxides to be projected from the
surface of porous glass, the glass surface may be treated for 1
minute with a hydrofluoric acid solution, followed by washing and
drying. A desired substrate 12 can be thus prepared.
The above substrate 12 may more preferably have a thickness of 0.5
.mu.m or more because of the roughness on the surface of porous
glass.
In FIGS. 16A and 16B, the numeral 14 denotes a glass substrate
commonly called colored glass, which is glass that contains metal
colloid fine particles 15. The numeral 1 or 2 denotes an electrode
provided on the substrate. The metal colloid fine particles in the
colored glass may suitably have a particle diameter of from 20
angstroms to 6,000 angstroms, more desirably from 100 angstroms to
2,000 angstroms. Also, the density of the fine particles, though
variable depending on the particle diameter or materials for the
fine particles, may suitably be in such a state that particles are
spatially apart and electrically connected in the vicinity of a
drive voltage. To make such colored glass, it can be readily
prepared by a common, often used technique, namely, a method in
which colorant raw materials such as AuCl.sub.3 and AgNO.sub.3 are
dissolved in main components of the glass, which is then subjected
to heat treatment for 10 to 20 minutes at temperatures of from
600.degree. C. to 900.degree. C. to deposit gold colloid or silver
colloid fine particles in the glass. In the substrate prepared
according to such a commonly available method, the metal fine
particles are little deposited out of the glass surface, and
therefore have good smoothness of the substrate surface on which
the electrodes are formed, thus bringing about the advantage that
the electrodes in this device can be made to have a smaller
thickness.
In this device, after the metal fine particles were deposited in
the glass, the substrate surface may also be treated with an
aqueous hydrofluoric acid solution in the same manner as in the
device described in relation to the above FIG. 15 so that the metal
colloids may be protruded in a large number from the glass
substrate surface, thus obtaining the effect as aimed in the
present invention.
The present invention further provides an electron-emitting device
characterized by a device structure, comprising a semiconductor
layer formed between opposing electrodes, and fine particles
further arranged in a dispersed state on said semiconductor
layer.
In the electron-emitting device of the present invention,
application of a voltage between the electrodes brings about
emission of electrons from the fine particles which are
conductive.
Taking such a device structure not only can solve the problems
involved in the prior art previously discussed, but also can
provide an electron-emitting device capable of obtaining emitted
electric currents with a low electric power and in a high
density.
Description will be made below on the basis of FIG. 17.
In the figure, electrodes 1 and 2 are provided on a substrate 4,
giving minute spacing to form a discontinuous electron-emitting
region comprising fine particles 9 dispersed between them. The
numeral 16 denotes a semiconductor layer formed at least at an
electrode spacing region L.
FIG. 18 is a diagrammatical cross section in the C-D direction in
FIG. 17. In the figure, the kind, particle diameter and spacing
between fine particles on the substrate 4 are as described in
relation to FIG. 8.
A method for preparing of the device illustrated in FIG. 17 will be
described below.
FIGS. 19(A) to (C) illustrate cross sections of a device for each
preparation step. (1) The surface of a substrate 4 comprised of
glass or ceramics is degreased and cleaned. (2) On the insulating
layer obtained in (1), electrodes 1 and 2 are formed according to
vacuum deposition, photolithography, lifting-off, printing, or the
like process. (3) Next, the fine particles 9 are coated on the
electrode gap region obtained in (2). A dispersion of fine
particles are used in the coating. Fine particles and an organic
binder to promote dispersion of the fine particles are added in an
organic solvent comprised of butyl acetate, alcohol, ketone or the
like, followed by stirring or the like to prepare the dispersion of
fine particles. Usable as the organic binder are butyral resins,
acrylic resins, vinyl chloride-vinyl acetate copolymers, phenol
resins, nylons, polyesters and urethanes.
Here, an example of methods for preparing the dispersion of the
fine particles is set out below.
TABLE-US-00001 Fine particles SnO.sub.2 1 g (fine particle
diameter; 100 to 1,000 angstroms) Organic solvent, MEK (methyl
ethyl ketone): 1,000 cc cyclohexane = 3:1 Organic binder, butyral 1
g
The above materials were stirred in a paint shaker for three hours
with glass beads to make a dispersion.
This fine particle dispersion is coated on the surface of a
specimen according to dipping, spin coating or the like process,
and then baking is carried out for about 10 minutes at a
temperature at which the solvent or the like may be evaporated and
also the organic binder is carbonized to give a semiconductor
layer, for example, at 250.degree. C. Thus the semiconductor layer
16 and the fine particles 9 are arranged in the electrode spacing
L. Of course, the semiconductor layer 16 and the fine particles 9
are arranged on the whole surface of the specimen, but no
difficulty is brought about as there is applied substantially no
voltage to the semiconductor layer 16 and the fine particles 9
outside the electrode spacing L when electrodes are emitted.
Thickness of the semiconductor layer 16 and arrangement density of
the fine particles 9 may vary depending on the coating conditions
and how to prepare the fine particle dispersion, and the amount of
electric currents flowing to the electrode spacing L may also vary
in accordance with this.
In addition to the above formation by coating, also available as a
method for dispersing the fine particles 9 to the electrode gap
region obtained in (2) is, for example, a method in which a
solution of an organic compound is coated on the substrate followed
by thermal decomposition to form metal particles. As an example, a
solution is prepared using materials shown below:
TABLE-US-00002 Fine particle material: Pd organic metal 3 g
compound (weight calculated as Pd metal) Organic solvent: Butyl
acetate 1,000 g Organic binder: Butyral 1 g
This Pd organic metal compound solution is coated, followed by
heating, so that the fine particles 9 comprising Pd and the
insulating layer 16 can be obtained.
The semiconductor layer 16 comprises a film mainly constituted of
the carbon obtained by the baking. This is a semiconductor layer
having an electrical specific resistance of about 1.times.10.sup.-3
ohm.cm or more.
In the specimen obtained according to the above steps, the
thickness of the semiconductor layer 16 becomes smaller than the
particle diameter of the fine particles 9. In other words, it has
the structure that the fine particles 9, though embedded in the
semiconductor layer 16, are fixed in the manner that they are
partly protruded (FIG. 18).
In the embodiment having been described above, the fine particles 9
have the structure that they protrude from the semiconductor layer
16. Here, the fine particles 9 may be covered with a carbon film
obtained by further coating only the organic binder solution on the
surface of this device followed by baking, so that there can be
given the structure that the fine particles 9 are included into the
semiconductor layer 16 as illustrated in FIG. 20.
The ratio of carbon to fine particles in the coating solution may
be changed to increase the carbon, and also the amount of coating
may be increased, so that there can be also given the structure
that the fine particles 9 are included into the semiconductor layer
16 or at least part thereof has protruded from the semiconductor
layer as illustrated in FIG. 21.
The devices having been described above have the feature that the
production steps can be simplified since the semiconductor layer 16
is formed in the same step as for arrangement of the fine particles
9.
It is also possible to prepare the semiconductor layer 16 from
materials other than the carbon, namely, semiconductor materials
obtained by coating or printing and baking, as exemplified by a
solution containing Si, Ge, Se or the like. Accordingly, a
semiconductor layer having desired characteristics can be obtained
by selecting the conditions for the preparation and coating of the
solution of these materials and for the baking. Also in using these
semiconductor layers, there is retained the feature that the fine
particles can be arranged in the same step.
The electron-emitting device of the present invention may also
comprise an electron-emitting device having the structure as shown
in FIG. 22.
A method of preparing the electron-emitting device illustrated in
FIGS. 23A-23D will be described. Cross sections of a device are
illustrated in succession to describe below an example of the
preparation method. 1) The surface of a substrate 4 is degreased
and cleaned. 2) On the substrate obtained in 1), formed is a
semiconductor layer 16 obtained by vacuum deposition, coating or
printing and baking.
Usable as the above semiconductor layer are an amorphous silicon
semiconductor film or crystallized silicon semiconductor film
obtained by vacuum deposition, a compound semiconductor film, and a
semiconductor film obtained by coating or printing and baking.
For example, there can be formed a hydrogenated amorphous silicon
(A-Si:H) semiconductor layer obtained by plasma CVD. This
semiconductor layer has a film thickness of approximately from 50
angstroms to 10 .mu.m. 3) Electrodes 1 and 2 are provided in the
same manner as in FIG. 19B. 4) Fine particles 9 are provided in the
same manner as in (3) in FIG. 19C. It is preferred to decrease the
amount of carbon in the coating solution or reduce it to zero to
make small the thickness of the carbon film semiconductor layer
formed at the electrode spacing region L. This is because the
effect of the semiconductor layer 16 can be better brought out by
allowing an electric current I.sub.f flowing to the electrode
spacing L to flow to the semiconductor layer 16 and the fine
particles 9 as much as possible.
In the device having such structure, it is also possible to use
fine particles feasible for vacuum deposition. With a material
applicable to vacuum deposition, the fine particles can be formed
by control of vacuum deposition conditions such as substrate
temperature or by a means like vacuum deposition such as masked
vacuum deposition.
In the electron-emitting device obtained according to the above 1)
to 4), the semiconductor layer and the fine particles are each
formed in a separate step, resulting in a greater degree of freedom
in the conditions for forming the semiconductor layer. Accordingly,
it becomes more possible to adjust characteristics of the
semiconductor layer 16. For example, changing the amount of an
impurity dope and selecting suitable conditions for formation in
forming a semiconductor makes it able to readily adjust the
electrical resistance of the semiconductor layer 16. Accordingly,
it becomes feasible to adjust the amount of the electric current
I.sub.f flowing to the device, thus bringing about the feature that
it becomes feasible to adjust the drive voltage of the device.
In the electron-emitting device of the present invention, the
substrate itself may also comprise a semiconductor substrate that
replaces the semiconductor layer 16. FIG. 24 illustrates a cross
section of the device of this embodiment. As the semiconductor
substrate 17, there can be used substrate materials having desired
characteristics, as exemplified by Si wafers. Usable as methods for
obtaining the semiconductor substrate having the desired
characteristics are ion implantation to a semiconductor substrate
or insulator substrate and the like methods.
This method enables adjustment of the specific resistance only at
desired areas on the same plane. For this reason, in instances
where electron-emitting devices are integrated in a high density,
the leakage current among adjacent devices can be made small and
the crosstalk can be decreased. Because of the arrangement on the
same plane, this method further has the feature that no trouble
such as disconnection may occur owing to poorness in step coverage
on the stepped ends of the electrodes.
FIG. 25 is a cross section explanatory of still another
electron-emitting device of the present invention. The respective
materials are constituted in the manner as described above, but in
the preparation steps the semiconductor layer 16 is formed after
the electrodes 1 and 2 and the fine particles 9 were formed. Thus
the fine particles 9 are made to be included into the semiconductor
layer 16 and fixed there. The surface of the semiconductor layer is
thereafter shaved off by etching to give the structure that the
fine particles 9 are fixed in the state that they protrude from the
semiconductor layer.
FIG. 26(A) to (E) successively illustrate cross sections of device
to explain the preparation steps of the electron-emitting device
illustrated in FIG. 5. An example of the preparation method will be
described below. (1) The surface of the substrate 4 is degreased
and washed. (2) Electrodes 1 and 2 are provided in the same manner
as in FIG. 19(B). (3) Fine particles 9 are provided in the same
manner as in FIG. 19(C) (preferably using a dispersion containing
no organic binder). (4) A semiconductor 16 is formed in the
vicinity of the electrode spacing region L. Here, in general, the
semiconductor layer is deposited also on the surface of the fine
particles 9, and so deposited that the particle diameters of the
fine particles 9 may produce convexes. (5) Etching is applied
mainly on the surfaces of the convexes of the semiconductor layer
16 obtained in (4). For example, ion milling may be carried out in
the state that the specimen is obliquely set, so that the surfaces
of the convexes of the semiconductor layer 16 are etched. As a
result, there is given the structure that part of each fine
particle 9 is exposed from the semiconductor layer 16 at the etched
portions and also fixed in the semiconductor layer 16.
If alternatively the etching step is not applied, there is given
the structure that the fine particles 9 are included into the
semiconductor layer 16.
In all the embodiments having been described above, the
semiconductors and fine particles are arranged in the electrode
spacing region formed on a plane substrate, but the present
invention is by no means limited to these forms.
For example, the electron-emitting device may take the form as
shown in FIG. 1, i.e., the vertical type one. (See FIG. 27.) This
is a device in which the electrodes 1 and 2 are each formed on the
other side of a stepped portion of the insulating layer 5 on the
substrate 4.
The present invention particularly further provides a device in
which the electrodes disposed in the electron-emitting device as
illustrated in FIG. 8 are made to be disposed as in the vertical
type as shown in FIG. 1, i.e., an electron-emitting device
comprising a substrate provided thereon with an insulating layer in
which fine particles are dispersed, a stepped portion formed at an
end portion of the insulating layer on the top surface of the
substrate, and an electrode provided each on the top surface of
said insulating layer and on the top surface of said substrate; an
end of each electrode being positioned at an upper end or lower end
of said stepped portion in such a manner that at least part of the
sidewall face at the stepped portion, of the end portion of said
insulating layer in which the fine particles are dispersed may not
be hidden; and electrode spacing being formed between said
electrode ends, where electrons are emitted by applying a voltage
between these electrodes .[.[FIG. 28(C)].]. .Iadd.(FIG. 28
(C)).Iaddend..
In FIGS. 28(a), (b) and (c), the numerals 1 and 2 denote electrodes
for obtaining electrical connection; 4, a substrate; 9, fine
particles; 5, an insulating layer containing the fine particles in
a dispersed state; and 6, an electrode spacing.
In FIG. 28(C), the electron-emitting device of the present
invention is a device such that the fine particles 9 dispersed in
the insulating layer 5 forming a stepped portion are arranged at
the electrode spacing 6 formed between the electrodes 1 and 2 whose
end portions oppose each other (but without overlap) at the stepped
portion, where electrons are emitted from the fine particles 9 by
applying a voltage between the electrodes 1 and 2.
An example of preparation methods will be described below in
relation to FIGS. 28(a), (b) and (c).
First, the insulating layer 5 containing the fine particles 9 is
built up on the substrate 4 by liquid coating or a like process
.[.[see FIG. 28(a)].]. .Iadd.(see FIG. 28(a)).Iaddend..
Next, the insulating layer 5 is etched by photolithoetching so that
a stepped portion is given substantially at the middle portion of
the substrate 4 .[.[see FIG. 28(b)].]. .Iadd.(see FIG.
28(b)).Iaddend..
Then the electrodes 1 and 2 are deposited on the insulating layer 5
and the substrate 4 in such a manner that at least part of the
sidewall of the stepped portion may not be hidden, thus forming the
electrode spacing 6 .[.[see FIG. 28(c)].]. .Iadd.(see FIG.
28(c)).Iaddend..
The electron-emitting device of the present invention can be
obtained according to the above process. The present device may be
placed in a vacuum container, a voltage may be applied to the
electrodes 1 and 2, and a lead-out electrode plate (not shown) may
be disposed so as to oppose at the top surface of the device, to
which a high voltage is applied, whereupon electrons are emitted
from the vicinity of the electrode spacing 6.
In this figure, the materials for and thickness of the electrodes,
materials for the fine particles concerned with the electron
emission and materials for and thickness of the insulating layer
are as described in relation to FIG. 1.
It can be confirmed that an electron-emitting device comprising
electrodes 1 and 2 formed partly overlapping as illustrated in FIG.
29(c), though having a slight difference in the electrode spacing,
can also give good results.
In the device illustrated in FIG. 29(c), an electrode 1 is first
deposited and formed on a substrate 4 .[.[see FIG. 29(a)].].
.Iadd.(see FIG. 29(a)).Iaddend.. Thereafter an insulating layer 5
containing fine particles 9 and an electrode material 2c are
deposited .[.[see FIG. 29(b)].]. .Iadd.(see FIG. 29(b)).Iaddend.,
and an electrode 2 and electrode spacing 6 are formed by
photolithoetching, thus forming an electron-emitting device .[.[see
FIG. 29(c)].]. .Iadd.(see FIG. 29(c)).Iaddend..
The present invention also provides an electron emission device as
illustrated in FIG. 30, which is another embodiment of the
electron-emitting device described in relation to FIG. 28 and at
the same time a preferred embodiment of the electron-emitting
device illustrated in FIG. 1.
The electron-emitting device illustrated in FIG. 30 comprises a
substrate provided thereon with insulating layers interposing the
face on which fine particles are dispersed, a stepped portion
formed between an end portion of the insulating layer and the top
surface of the substrate, and an electrode provided each on the top
surface of said insulating layer and on the top surface of said
substrate; an end of each electrode being positioned at an upper
end or lower end of said stepped portion in such a manner that said
electrode may not come into contact with the face on which the fine
particles are dispersed; and electrode spacing being formed between
said electrode ends, where electrons are emitted by applying a
voltage between these electrodes.
In FIG. 30, the numeral 1 and 2 denote electrodes for obtaining
electrical connection; 4, a substrate; 5a, an insulating layer on
the substrate 4; 9, fine particles on the insulating layer 5a; 5b,
an insulating layer to cover the fine particles; and 6, electrode
spacing between the electrodes 1 and 2.
In FIG. 30(d), the electron-emitting device of the present
invention is a device in which the fine particles 9 interposed
between the insulating layers 5a and 5b are arranged at the
electrode spacing defined between the electrodes 1 and 2 whose end
portions oppose each other (but without overlap) at the stepped
portion, and electrons are emitted from the fine particles 9 by
applying a voltage between the electrodes 1 and 2.
A preparation method thereof will be described below.
First, the insulating layer 5a is built up or deposited on the
substrate by liquid coating, vacuum deposition or the like process,
and then the fine particles 9 are dispersed on the insulating layer
5a .[.[see FIG. 30(a)].]. .Iadd.(see FIG. 30(a)).Iaddend..
Next, the insulating layer 5b is built up or deposited on the
insulating layer 5a and the fine particles 9 by liquid coating or
vacuum deposition or the like process so that it may cover the fine
particles 9 .[.[see FIG. 30(b)].]. .Iadd.(see FIG.
30(b)).Iaddend..
The insulating layers 5a and 5b interposing the fine particles are
further formed by photolithoetching so that the stepped portion can
be given substantially at the middle of the substrate 4 .[.[see
FIG. 30(c)].]. .Iadd.(see FIG. 30(c)).Iaddend..
Thereafter, the electrodes 1 and 2 are deposited on the insulating
layer 5b and the substrate 4 in such a manner that at least part of
the sidewall of the stepped portion and the fine particles 9 may
not be hidden and also no electric short may be caused, to form the
electrode spacing 6 .[.[see FIG. 30(c)].]. .Iadd.(see FIG.
30(c)).Iaddend..
The electron-emitting device of the present invention can be
obtained according to the above process. The present device may be
placed in a vacuum container, a voltage may be applied to the
electrodes 1 and 2, and a lead-out electrode plate (not shown) may
be disposed so as to face the top surface of the device, to which a
high voltage is applied, whereupon electrons are emitted from the
vicinity of the electrode spacing 6.
The present invention may still also be embodied for the
electron-emitting region 3 by forming an electron-emitting layer 3a
and electron-emitting bodies 3b.
For example, as illustrated also in FIG. 31, this is an
electron-emitting device having the structure that, for example,
the embodiments of FIG. 3 and FIG. 5 previously described are
combined.
In FIG. 31, the electron-emitting device of the present invention
is a device comprising a laminate comprising an insulating layer 5
held between a pair of electrodes whose end portions oppose each
other, wherein the electron-emitting layer 3a is included into the
insulating layer 5 in such a manner that the sidewall face of the
electron-emitting layer 3 a may be disposed along the sidewall face
of the insulating layer 5 formed at the opposing portion at which
the electrodes 1 and 2 oppose each other, and the electron-emitting
bodies 3b are further disposed at the surface of said sidewall,
where electrons are emitted by applying a voltage between the
electrodes 1 and 2.
The materials and methods for forming the device are as described
previously.
Besides taking the structure as illustrated in FIG. 31 to form the
electron-emitting region 3, it is also desirable to, as shown in
FIG. 33, form a stepped portion 18 with an insulating layer 5
containing fine particles (electron-emitting materials) 9 and at
the same time provide electron-emitting bodies 3b on the side
surface of said stepped portion.
Alternatively, as shown in FIG. 35, fine particles
(electron-emitting materials) 9 may be arranged on an insulating
layer 5a, the fine particles are further covered thereon with an
insulating layer 5b to form a stepped portion, and
electron-emitting bodies 3b may be further arranged on the side
surface of said stepped portion to form an electron-emitting
region.
In the present invention, the device may also comprise an
electron-emitting region obtained by three or more of its formation
methods as shown in FIG. 36.
Incidentally, in the case where the fine particles are used as the
electron-emitting bodies 3b dispersed on the side surface or the
electron-emitting materials 9 contained in the insulating layer as
described above, it was confirmed that employment of two or more
kinds of different materials as said fine particles enables better
control of the characteristics as the electron-emitting device.
Usable as materials for the fine particles are the materials same
as those described in relation to FIG. 8. Selecting appropriately
two or more kinds of different materials among those materials as
occasion demands and using them as the fine particles makes it
possible to not only achieve electron emission but also improve or
control the characteristics of intended electron-emitting
devices.
For example, since in the electron-emitting device of the present
invention an electric current in the direction of electrodes is
indispensable for electron emission, it is possible to lower the
drive voltage of the device by incorporating fine particles of
relatively low resistance nature (for example, incorporating Pd or
Pt fine particles in SnO.sub.2 fine particles).
It can be also expected to increase electron emission by adding to
Pd fine particles, low work function materials as exemplified by
LaB.sub.6 or materials having a large coefficient of secondary
electron emission as exemplified by an AgMg alloy.
The present invention can be also effective not only for the
embodiment using the fine particles of two or more of different
materials, but also for the instance where the fine particles, even
though comprised of one kind of material, are constituted of two or
more kinds having difference only in physical parameters such as
average particle diameter and shapes.
For example, the particle diameter may be made to comprise two
kinds, one of which is so fine (as exemplified by a particle
diameter of about 100 angstroms) that the effect of electric field
emission can be greatly exhibited, and the other of which is
relatively so large (as exemplified by a particle diameter of about
4,000 angstroms) as to be contributory only to electrical
conductivity, so that the former can realize an increase in the
amount of electron emission, and the latter, driving with a low
voltage.
It is of course also possible to utilize the materials by making
combination both of the above-described two or more kinds of
different materials and two or more kinds having difference in
physical parameters as in particle diameter.
To form the fine particles by dispersion, the most simple and
convenient is a method in which a dispersion of fine particles
comprising desired materials is coated on a substrate or the like
by rotary coating, dipping or the like technique, followed by
heating to remove a solvent, a binder and so forth. In this
instance, adjusting the particle diameter of fine particles,
content thereof, coating conditions, etc. enables control of the
state of distribution of their dispersion.
There is no established theory as to the mechanism by which the
electrons are emitted from the electron-emitting device according
to the present invention, but it is presumed to be nearly as
follows:
Presumed is the electric field emission because of the voltage
applied to a narrow insulating layer gap, or the secondary electron
emission occurring when the electrons emitted from
electron-emitting materials are diffracted or scattered by the film
of the island-like structure or the electrodes, or caused by
collision, or the thermionic emission, hopping electrons, Auger
effect, etc.
The above apparatus making use of the electron-emitting device of
the present invention will be described below in detail with
reference to the drawings.
With reference to FIGS. 39A, 39B, 39C and 39D an embodiment of a
flat-plate image display apparatus in which the present invention
is applied will be described.
FIG. 39A is a partially cutaway perspective view to show the
structure of a display panel.
How to operate the present apparatus will be described below in
order.
FIG. 39A shows the structure of the display panel, in which VC
denotes a vacuum container made of glass, and FP, part thereof,
denotes a face plate on the display surface side. At the inner face
of the face plate FP, a transparent electrode made of, for example,
ITO is formed. At the further inner side thereof, red, green and
blue fluorescent members (image forming members) are dividedly
applied in a mosaic fashion and provided with a metal back as known
in the field of CRT. The transparent electrode, the fluorescent
member and the metal back are not shown in the drawing 39A, but are
shown in FIG. 39D. In FIG. 39D the face plate, FP, transparent
electrode, TE and fluorescent member, FL are shown as three layers
laminated in the order shown. The above transparent electrode is
electrically connected to the outside of the vacuum container
through a terminal EV so that an accelerating voltage can be
applied.
The letter symbol S denotes a glass substrate fixed to the bottom
of the above vacuum container VC, on the surface of which the
electron-emitting device ED of the present invention is formed in
arrangement (FIGS. 39B and 39C) with number N.times.lines 1.
Herein, FIG. 39B shows an example wherein the devices in which
electrodes 1 and 2 are juxtaposed on a surface of a substrate are
arranged. Further, FIG. 39C shows an example wherein the devices in
which electrodes 1 and 2 are laminated on a substrate are arranged.
The group of electron-emitting devices are electrically
parallel-connected for each line, and positive-pole side wiring 31
(or negative-pole side wiring 32) of each line is electrically
connected to the outside of the vacuum container VC through
terminals D.sub.p1 to D.sub.pl (of terminals D.sub.m1 to
D.sub.ml).
A grid electrode (modulating electrode) GR is formed in a stripe
between the substrate S and the face plate FP. The grid electrode
(modulating electrode) GR is provided in the number of N, falling
under right angles with the line of the electron-emitting device.
Grid holes Gh are provided in each electrode, through which
electrons are transmitted. The grid holes Gh may be provided one by
one corresponding with each electron-emitting device as shown in
FIG. 39A, or the number of minute holes may alternatively be
provided in a mesh form.
The respective grid electrodes (modulated electrodes) GR are
electrically connected to the outside of the vacuum container VC
through grid electrode terminals G.sub.1 to G.sub.N.
In the present display panel, the lines of the electron-emitting
devices in the number of 1 and the lines of the grid electrodes
(modulating electrodes) in the number of N constitute an XY matrix.
Synchronizing with the successive driving (scanning) of the lines
of electron-emitting devices line by line, modulating signals
allotted to one line of an image are simultaneously applied to the
lines of grid electrodes (modulating electrodes) in accordance with
information signals. Thus, the irradiation with each electron beam
to the fluorescent member can be controlled and the image is
displayed line by line.
The image display apparatus as described above can be an image
display apparatus capable of obtaining a displayed image
particularly with a high resolution, free of luminance unevenness
and with a high luminance, and having a facility of manufacturing a
long life, because of the advantages attributable to the
electron-emitting device of the present invention as previously
described.
EXAMPLES
Specific examples of the present invention will be described
below.
Example 1
FIGS. 3(A) and (B) are a flow sheet illustrating an example for a
method of preparing the electron-emitting device of the present
invention.
In FIGS. 3(a), (b), the numeral 4 denotes a glass substrate; and 1,
a nickel electrode of 500 angstroms thick.
SiO.sub.2 was vapor deposited to form an insulating layer 5a of
1,000 angstroms thick. Au was vapor deposited as an
electron-emitting layer 3a to have a thickness of 500 angstroms,
and an insulating layer 5b was also formed in the same manner as
for 5a, thus bringing these three layers into lamination.
Then these were partly laminated on the electrode 1 as illustrated
in FIG. 3(a), along the pattern of the electrode 1, followed by
patterning. Next, Ni was laminated as an electrode 2 with a film
thickness of 5,000 angstroms.
As illustrated in FIG. 3(b), the electrode 2 as subjected to
patterning by usual photolithographic process along the patterns of
the electrode 1, insulating layer 5a, electron-emitting layer 3a
and insulating layer 5b. As illustrated in the figure, the
electrodes 2a and 2b were electrically separated, and here the area
at which the electrode 2b and electrode 1 overlap was made as small
as possible.
Applying a voltage of 20 V between the electrode 2a and 2b, there
was obtained emission of an electron beam 7 of 0.3 .mu.A per 1 mm
length of width of the electrode 2a in the direction vertical to
the paper surface.
As to the electron-emitting layer 3a, usually it may show an island
structure similar to the small island structure among narrow cracks
in the conventional film prepared by forming, if its film thickness
is 100 angstroms or less. However, it is presumed that even if the
film thickness increases to give a continuous film, the electrodes
1 and 2b are electrically insulated, and thus the layer acts
similarly to the island structure.
Example 2
In FIG. 4, the numerals 1 to 5 denote the same as in FIG. 3. In
this figure, the numeral 8 denotes an intermediate layer, which is
interposed between the insulating layer 5b and electrode 2 to
constitute a multi-layer electrode. In the present Example,
subsequent to the formation of the insulating layer 5b, a step to
vapor-deposit LaB.sub.6 to a thickness of 1,000 angstroms followed
by patterning was added to the preparation steps in Example 1. The
electrode 2 was also formed by using Ni with a thickness of 5,000
angstroms as in Example 1.
Applying a voltage of 20 V between the electrode 2a and 2b of the
device thus obtained, there was obtained emission of an electron
beam 7 of 0.5 .mu.A per 1 mm length of width of the electrode 2a in
the direction vertical to the paper surface.
Example 3
FIGS. 6(A) and (B) are a flow sheet illustrating an example for a
method of preparing the electron-emitting device according to the
embodiment of the present invention. In FIGS. 6(a), (b), the
numeral 4 denotes a glass substrate.
An insulating layer 5a was formed with SiO.sub.2 in 1,500 angstrom
thickness; an electron-emitting layer 3a, with Pd in 250 angstrom
thickness; and an insulating layer 5b, with SiO.sub.2 in 500
angstrom thickness, each of which layers were obtained by vacuum
deposition and thereafter, as illustrated in FIG. 6(a), etched to
have a stepped shape to effect patterning. Next, electrodes 1 and 2
are deposited. The electrodes are, as illustrated in FIG. 6(b),
deposited on the insulating layer 5a and 5b and the stepped portion
formed by the electron-emitting layer 3a with use of Ni with a
thickness of 1,000 angstroms. In this occasion, generally the
electrode 1 will not come into contact with the electron-emitting
layer 3 if the thickness of the electrode is made smaller than the
height of the stepped portion of the insulating layer 5a, i.e., the
step coverage is made poor, and also the electrode spacing 6 can be
made narrower if the insulating layer 5b is made thinner.
The electron-emitting device obtained according to the above
process was placed in vacuum, a voltage of 1 kV was applied using a
lead-out electrode (not shown) provided at an upper area in the
drawing, and a direct current voltage of about 12 V was applied
between the electrodes 1 and 2, resulting in emission of electrons
from the electron-emitting region 3.
Example 4
(see FIG. 2.) On a glass substrate 4, an insulating layer 5 was
deposited using SiO.sub.2 to a thickness of 2,000 angstroms. This
was etched to have a stepped shape to effect patterning. Next,
electrodes 1 and 2 were deposited with Ni in 1,000 angstroms
thickness by vacuum deposition with masking to desired shapes.
Here, the step coverage by vapor deposited Ni at the stepped
portion was generally made poor, and the electrode spacing 6 was
formed in a space of about 1,000 angstroms. Fine particles were
made to be fixed here as electron-emitting bodies 3b. The fine
particles are obtained, for example, by the following manner.
Namely, prepared is a solution of fine particles of metals such as
Pd, having a particle diameter of several 100 angstroms as
materials serving as the electron-emitting bodies 3b. This solution
was coated by spin coating, and baked at a temperature of about
300.degree. C. to fix the fine particles to the electrode spacing
region. The resulting device was able to emit electrons by driving
it as in Example 3.
Example 5
In the constitution in FIG. 8, formed on a soda lime glass
substrate 4 was an insulating layer 11 comprised of a lead oxide
type low-melting glass coating film.
Pt electrodes 1 and 2 were further formed thereon with a thickness
of 1,000 angstroms. L=0.5 .mu.m and W=300 .mu.m, and Pd, as fine
particles 9, of several hundred angstroms in particle diameter were
further arranged in a dispersed state between said electrodes.
The Pd fine particles 9 were arranged by spin coating (3,000 rpm;
coating was repeated five times), using a butyl acetate solution
(Catapaste CCP-4230, available from Okuno Seiyaku Kogyo) containing
an organic palladium compound in an amount of about 0.3% in terms
of Pd metal, and treated by heating at 250.degree. C. They were
then baked for 20 minutes at 450.degree. C. to bring the fine
particles to be included into the insulating layer 11.
Here, the amount of an electric current flowing to the electrode
spacing L was about 5 .mu.A/5V. This specimen was subjected to
pickling using an aqueous 5 to 10 vol. % HCl solution, resulting in
the amount of electric current of 250 .mu.A/5V.
The specimen prepared according to the above process was placed
under vacuum of 10.sup.-5 Torr or more, and a voltage was applied
between the electrodes 1 and 2 as described above. As a result, an
electric current V.sub.f flowed on the surface of the inside of the
insulating layer 11 or through the fine particles 9, and a stable
electron emission was confirmed when a voltage was applied allowing
a lead-out electrode (not shown) to serve as the anode. The
electron emission was also confirmed in regard to a specimen to
which no pickling was applied.
Results of measurement on the electron-emitting device prepared in
the present Example are shown in Table 1. Swing of the emitted
electric current is indicated with a value obtained by dividing the
amount of change .DELTA.I.sub.e in the amount of the emitted
electric current of 1.times.10.sup.-3 Hz or less by the emitted
electric current I.sub.e and multiplying it by 100, i.e.,
.DELTA.I.sub.e/I.sub.e.times.100.
TABLE-US-00003 TABLE 1 Efficiency V.sub.f (Emitted Swing Device
I.sub.e current I.sub.e/ of drive Emitted Device emitted voltage
current current I.sub.f) Life* current Present .mu.A 8 .times.
10.sup.-3 100 hrs 10% Example: 0.8 or more 30 V *Life: The period
in which the emitted electric current comes to 50% or less.
The above results, as compared with the results of measurement of a
surface conduction electron-emitting device comprised of ITO
materials that required the forming of the conventional technique
(drive voltage of the device; 20 V; emitted electric current; 1.2
.mu.A; efficiency; 5.times.10.sup.-3, life; 35 hours; swing of
emitted electric current: 20 to 60%), can tell the following:
The electron-emitting device of the present Example is stable and
of long life, and shows high characteristics in the
electron-emitting efficiency.
Example 6
Example 5 was exactly repeated except that the baking for 20
minutes at 450.degree. C. was replaced by complete baking for 2
hours at 490.degree. C., to carry out an experiment.
The device obtained by the above experiment gives a device in which
all the fine particles 9 are penetrated into the insulating layer
11 (FIG. 9).
The same measurement as in Example 5 was made on this
electron-emitting device to obtain the same electron emission as in
Example 5, but it tended to have a longer life and show further
decreased swing of the emitted electric current.
More specifically, the electron-emitting device in which the fine
particles are included into the insulating layer as in the present
Example 6 is characterized by being more improved in the life and
the swing of emitted electric current in addition to the effect
obtainable in Example 5.
Example 7
Example 5 was exactly repeated except that the baking for 20
minutes at 450.degree. C. was replaced by baking for 10 minutes at
420.degree. C.
The device obtained by the above experiment gives a device as shown
in FIG. 10. The electron-emitting device in which the fine
particles are slightly penetrated into the insulating layer brought
about an electron-emitting device having more improved emitted
electric current and emitted current efficiency (I.sub.e/I.sub.f)
in addition to the effect obtainable in Example 4.
Example 8
The surface of the insulating layer 11 at the electrode spacing L
of the electron-emitting device obtained in Example 6 was etched
using an aqueous 5 Vol. % Hf solution to bring the fine particles 9
to expose from the insulating layer 11, so that there was obtained
a device having the same structure as in the above Example 7.
Example 9
Using a substrate 12 comprising porous glass having a pore size of
80 to 1,000 angstroms in which gold fine particles were deposited
to have a device resistance of from 1 megaohm to 10 megaohms, there
was given an electron-emitting device of the present invention
(FIG. 9).
Measurement on said device was carried out in the same manner as in
Example 5. Results are shown in Table 2.
TABLE-US-00004 TABLE 2 Efficiency V.sub.f (Emitted Device I.sub.e
current I.sub.e/ drive Emitted Device voltage current current
I.sub.f) Life* Present .mu.A 2 .times. 10.sup.-3 1,000 hrs Example:
1.0 or more 25 V *Life: The period in which the emitted electric
current comes to 50% or less.
It was revealed from the above results that the electron-emitting
device of the present invention becomes an electron-emitting device
that is stable (i.e. small in the swing of the emitted electric
current) and of long life and has a high electron emission
efficiency as compared with a conventional device obtained by
forming of gold (device drive voltage of: 16 V; emitted current:
0.8 .mu.A; efficiency: 1.2.times.10.sup.-5; life: 35 hours; swing:
20 to 60%). After the experiment for electron emission, the degree
of device deterioration was observed by using a scanning type
electron microscope, but there was seen little change in the
diameter or distribution of the fine particles of gold present
between the electrodes. However, the device obtained by forming of
gold showed an extreme deterioration at the high resistance part
discussed in the prior art.
The device according to the present Example 9 was able to be
readily integrated with less irregularities between devices even
when a number of the devices were formed on the same substrate.
Example 10
Referring to FIG. 16, obtained was an electron-emitting device
comprising a colored glass (golden red glass) substrate 14 having
gold colloids.
The same measurement as in Example 5 was made on said
electron-emitting device. Results obtained are shown in Table
3.
TABLE-US-00005 TABLE 3 Efficiency V.sub.f (Emitted Device I.sub.e
current I.sub.e/ drive Emitted Device voltage current current
I.sub.f) Life* Present .mu.A 2 .times. 10.sup.-2 2,000 hrs Example:
0.6 or more 32 V *Life: The period in which the emitted electric
current comes to 50% or less
As will be seen also from Table 3, the electron-emitting device of
the present Example is stable (i.e. small in the swing of the
emitted electric current) and of long life and has a high electron
emission efficiency. After the experiment for electron emission,
the degree of device deterioration was also confirmed by using a
scanning type electron microscope, but there was seen little change
in the diameter or distribution of the fine particles of gold
present between the electrodes. In contrast therewith, the
conventional device obtained by forming of ITO shows an extreme
deterioration at the high resistance part.
There was also obtained similar results in the case when, after
fine particles are deposited in the glass, the substrate surface
was treated with an aqueous hydrofluoric acid solution so that
metal colloids may be protruded in a large number from the surface
of the glass substrate, thus giving an electron-emitting device of
the present invention.
Example 11
On a clean, quartz glass substrate of about 1 mm thick, a solution
prepared by mixing an organic solvent (Catapaste CCP, available
from Okuno Seiyaku Kogyo) containing an organic palladium compound
with a SiO.sub.2 liquid coating preparation (OCD, available from
Tokyo Ohka Kogyo) to have a molar ratio of SiO.sub.2:Pd of about
5:1 was spin-coated with a spinner. Thereafter the resulting
coating was baked for 1 hour at about 400.degree. C. to obtain a
SiO.sub.2 insulating layer 11 having a film thickness of about
1,000 angstroms and containing Pd fine particles 9. After this
step, the surface of the insulating layer 11 was etched using an
aqueous hydrofluoric acid to bring the fine particles 9 to protrude
from the insulating layer 11.
Next, on the SiO.sub.2 insulating layer 11, a photoresist was
formed by photolithography with a thickness of abut 0.8 .mu.m in
the shape giving an electrode spacing L. Further on the SiO.sub.2
insulating layer 11 and said photoresist, a Ni thin film was
deposited with a thickness of 1,000 angstroms according to the
masking EB vacuum deposition that obtains shapes of electrodes.
Thereafter the photoresist was peeled to carry out a lift-off step
to remove unnecessary Ni thin film on the photoresist. Thus the
shapes of the electrodes 1 and 2 and electrode spacing L as shown
in FIG. 8 can be formed. In this instance, each dimension shown in
FIG. 8 was set to be .[.L=0..mu.um.]. .Iadd.L=0.8 .mu.m.Iaddend.,
W=300 .mu.m and A=2 mm.
Electron emission characteristics of the electron-emitting device
obtained according to the above process were measured to have
revealed that there was obtained electron emission of,
approximately, emitted electric current I.sub.e=1 .mu.A and
emission efficiency .alpha.=5.times.10.sup.-3 under the drive
voltage V.sub.f=30 V of the device. The life and the swing of the
emitted electric current were in substantially the same level as
those in Example 5.
Example 12
Example 11 was repeated but replacing the organic palladium
compound by SnO.sub.2 fine particles of 100 angstroms in average
particle diameter, to obtain a similar electron-emitting device,
and similar experiments were carried out. As a result there was
obtained electron emission of substantially the same level as in
Example 11.
Example 13
In the constitution as illustrated in FIG. 17, a semiconductor
layer 16 of about 100 angstroms thick was formed on a soda glass
substrate 4 by using a carbon film obtained from a calcined organic
substance. Palladium fine particles of about 100 angstroms in
diameter are dispersed in the semiconductor layer.
Electrodes 1 and 2 were also formed with Pt to have a thickness of
1,000 angstroms, a spacing of 0.8 .mu.m, and a width of 300
.mu.m.
Applying a voltage between the electrodes 1 and 2 prepared in the
above example produced a flow of an electric current I.sub.f
through the semiconductor layer 16 and fine particles 19, and a
stable electron emission was confirmed when a voltage was applied
allowing an lead-out electrode to serve as the anode.
Comparison of examples of characteristics were made between the
electron-emitting device prepared in the present Example, having a
semiconductor, and a prior art surface conduction electron-emitting
device comprised of ITO and requiring the forming, to obtain the
results shown in Table 4. Swing of the emitted electric current is
indicated with a value obtained by dividing the amount of change
.DELTA.I.sub.e in the amount of the emitted electric current of
1.times.10.sup.-3 Hz or less by the emitted electric current
I.sub.e and multiplying it by 100, i.e.,
.DELTA.I.sub.e/I.sub.e.times.100 (%)
TABLE-US-00006 TABLE 4 Efficiency V.sub.f (Emitted Swing Device
I.sub.e current I.sub.e/ of drive Emitted Device emitted voltage
current current I.sub.f) Life* current Present 4 .mu.A 1 .times.
10.sup.-3 800 hrs 15% Example: or more 15 V Device of 1.2 .mu.A 5
.times. 10.sup.-3 35 hrs % forming 20-60 of ITO: 20 V *Life: The
period in which the emitted electric current comes to 50% or
less
As will be clear from Table 4, the surface conduction
electron-emitting device of the present Example is characterized by
being stable and of long life, showing a low drive voltage and a
large emitted electric current.
Example 14
In the constitution illustrated in FIG. 22, an A-Si:H film was
deposited on a glass substrate 4 by plasma CVD to have a thickness
of 2,000 angstroms, thus giving a semiconductor layer 16.
Electrodes 1 and 2 were formed with Pt to have a thickness of 1,000
angstroms, a spacing L of 0.8 .mu.m, and a width W of 300
.mu.m.
Pd, as fine particles 9, of several 100 angstroms in diameter were
further arranged in a dispersed state between said electrodes.
The Pd fine particles 9 were arranged by spin coating (3,000 rpm;
coating was repeated five times), using a butyl acetate solution
(Catapaste CCP-4230, available from Okuno Seiyaku Kogyo) containing
an organic palladium compound in an amount of about 0.3% in terms
of Pd metal, and treated by heating at 250.degree. C. The
electron-emitting device prepared in the present Example, having a
semiconductor, was evaluated in the same manner as in Example 13.
As a result, it was able to obtain similar electron emission.
Example 15
In the constitution illustrated in FIG. 25, electrodes 1 and 2 were
formed on a glass substrate 4 with Pt to have a thickness of 1,000
angstroms, a spacing L of 0.8 .mu.m, a width W of 100 .mu.m.
Fine particles were prepared in the same manner as in Example 14,
and hydrogenated amorphous silicon was formed as a semiconductor
layer 16 by plasma CVD to have a thickness of about 500
angstroms.
Thereafter the convexes on the semiconductor layer 16 were etched
by ion milling.
The electron-emitting device prepared according to the above
process was evaluated in the same manner as in Example 12 to have
found that there is obtained similar electron emission.
Particularly in the present Example, different from Example 14, the
electron-emitting device in which the fine particles 9 were fixed
in the semiconductor layer 16 had a tendency of stableness in
electron emission in addition to the effect obtainable in Example
14.
Example 16
An electron-emitting device was obtained according to the
previously described preparation steps (a) to (c) of FIG. 28.
More specifically, on a clean, quartz glass substrate of about 1 mm
thick, a solution prepared by mixing an organic solvent (Catapaste
CCP, available from Okuno Seiyaku Kogyo) containing an organic
palladium compound with a SiO.sub.2 liquid coating preparation
(OCD, available from Tokyo Ohka Kogyo) to have a molar ratio of
SiO.sub.2:Pd of about 5:1 was spin coated with a spinner.
Thereafter the resulting coating was baked for 1 hour at about
400.degree. C. to obtain a SiO.sub.2 insulating layer 5 having a
film thickness of about 1,500 angstroms and containing Pd fine
particles 9 .[.[see FIG. 28(a)].]. .Iadd.(see FIG.
28(a)).Iaddend..
Next, the insulating layer 5 was etched by photolithoetching with
use of an aqueous hydrofluoric acid solution to form a stepped
portion of about 1,500 angstroms high at the middle of the
substrate 4 .[.[see FIG. 28(b)].]. .Iadd.(see FIG.
28(b)).Iaddend..
Thereafter, Ni electrodes 1 and 2 of about 500 angstroms in film
thickness were formed by deposition utilizing EB vacuum deposition
in the manner that the stepped portion may not be completely
covered.
In this instance, there is given the structure that the electrodes
1 and 2 oppose each other with certain spacing, across the side
wall of the stepped portion of the insulating layer 5 containing
the fine particles 9. This space is designated as electrode spacing
6 .[.[see FIG. 28(c)].]. .Iadd.(see FIG. 28(c)).Iaddend..
Electron emission characteristics of the electron-emitting device
obtained according to the above process were measured to have
revealed that there was obtained electron emission of,
approximately, emitted electric current I.sub.e=2.5 .mu.A and
emission efficiency .alpha.=5.times.10.sup.-3.
Example 17
According to the previously described preparation steps (a) to (c)
of FIG. 29, prepared was an electron-emitting device of the
constitution that an insulating layer is held between
electrodes.
More specifically, on a clean, quartz glass substrate 4 of about 1
mm thick, an Ni electrode of about 500 angstroms in film thickness
was deposited by EB vacuum deposition to form an electrode 1 by
photolithoetching .[.[see FIG. 29(a)].]. .Iadd.(see FIG.
29(a)).Iaddend..
Next, on the surface of the electrode 1 and the substrate 4, a
SiO.sub.2 insulating layer 5 containing Pd fine particles 9 was
deposited in the same manner as in Example 16 to have a film
thickness of about 1,000 angstroms. A Ni thin film of about 1,000
angstroms in film thickness was further deposited on the SiO
insulating layer to give an electrode material 2c .[.[see FIG.
29(b)].]. .Iadd.(see FIG. 29(b)).Iaddend..
Thereafter, on the Ni thin film, formed was a photoresist in the
shape of an electrode 2 partly overlapping with the electrode 1 at
the middle of the substrate. In the shape of this photoresist, the
electrode material 2c and insulating layer 5 were etched, followed
by peeling of the resist to form the electrode 2 and an electrode
spacing 6. The size other than thickness, of each material, was
made to be the same as in Example 16.
Electron emission characteristics of the electron-emitting device
obtained according to the above process were measured. As a result,
there was obtained the same electron emission as in Example 16.
Example 18
Example 16 was repeated except that the material for fine particles
and the organic solvent comprising the organic metal compound were
replaced by a SiO.sub.2 liquid coating preparation in which
SnO.sub.2 fine particles of about 100 angstroms in primary particle
diameter were dispersed, to carry out an experiment. As a result,
there was obtained the same electron emission as in Example 16.
Example 19
An electron-emitting device was obtained according to the
previously described preparation steps (a) to (d) of FIG. 30.
More specifically, on a clean, quartz glass substrate of about 1 mm
thick, a SiO.sub.2 liquid coating preparation (Catapaste CCP,
available from Okuno Seiyaku Kogyo) was spin-coated with a spinner.
Thereafter the coating was baked for 1 hour at about 400.degree. C.
to obtain an insulating layer 5a comprised of SiO.sub.2 and having
a film thickness of about 1,000 angstroms. Subsequently, on the
insulating layer 5a, an organic solvent (Catapaste CCP, available
from Okuno Seiyaku Kogyo) containing an organic palladium compound
was spin coated with a spinner. Thereafter the coating was baked
for 10 minutes at about 250.degree. C. to obtain fine particles 9
comprised of Pd in the state that they are dispersed on the surface
of the insulating layer 5a .[.[see FIG. 30(a)].]. .Iadd.(see FIG.
30(a)).Iaddend..
Next, on the fine particles 9 and insulating layer 5a, an
insulating layer 5b comprised of SiO.sub.2 was coated in the same
manner as the insulating layer 5a to have a film thickness of about
500 angstroms, followed by baking .[.[see FIG. 30(b)].]. .Iadd.(see
FIG. 30(b)).Iaddend..
Thereafter, the insulating layers 5a and 5b were etched using an
aqueous hydrofluoric acid solution by photolithoetching to form a
stepped portion of about 1,500 angstroms high at the middle of the
substrate 4 .[.[see FIG. 30(c)].]. .Iadd.(see FIG.
30(c)).Iaddend..
Ni electrodes 1 and 2 of about 5,000 angstroms in film thickness
was further formed by deposition utilizing EB vacuum deposition in
the manner that the stepped portion may not be completely covered.
A space thus formed is designated as electrode spacing 6 .[.[see
FIG. 30(d)].]. .Iadd.(see FIG. 30(d)).Iaddend..
Electron emission characteristics of the electron-emitting device
obtained according to the above process were measured to have
revealed that there was obtained electron emission of,
approximately, emitted electric current I.sub.e=2.0 .mu.A and
emission efficiency .alpha.=8.times.10.sup.-3.
Example 20
As illustrated in FIG. 32, a Ni electrode 1 of 500 angstroms thick
was formed on a glass substrate 4 by vacuum deposition. On the
electrode 1, an insulating layer 5a made of SiO.sub.2 was formed by
vacuum deposition utilizing sputtering to have a film thickness of
1,000 angstroms.
Next, an electron-emitting layer made of Au was formed in 500
angstroms thickness by vacuum deposition (a layer 3a), and
thereafter an insulating layer 5b (SiO.sub.2) was formed with a
film thickness of 1,000 angstroms by sputtering.
After the respective layers of the insulating layer 5a,
electron-emitting layer 3a, and insulating layer 5b were laminated,
they are partly laminated on the electrode 1 as illustrated in FIG.
32(a) along the pattern of the electrode 1, followed by patterning.
Next, an electrode 2 is laminated. The electrode 2 was made of Ni
to make wiring resistance lower. The thickness thereof was
controlled to 5,000 angstroms to obtain necessary wiring
resistance.
After the electrode 2 was laminated by vacuum deposition, the
electrode 2 was subjected to patterning by, for example, usual
photolithographic process along the patterns of the electrode 1,
insulating layer 5a, electron-emitting layer 3a and insulating
layer 5b as illustrated in FIG. 32(b).
A Pd organic metal solution (Catapaste, available from Okuno
Seiyaku Kogyo Co.) was spin coated as an electron-emitting layer
followed by baking for 10 minutes at 250.degree. C. to provide
electron-emitting bodies on the surface of a side wall of the
insulating layers. A voltage of 14 V was applied between the
electrodes 2a and 2b using a lead-out electrode (not shown)
provided above the device substrate, and a lead-out voltage of 500
V was applied to obtain emission of electron beams 7 of 1.7
.mu.A.
Example 21
FIG. 33(d) illustrate a cross section of an electron-emitting
device obtained in the present Example .[.[See FIGS. 33(a) to (d)
as to the preparation steps].]. .Iadd.(See FIGS. 33(a) to (d) as to
the preparation steps).Iaddend..
On a clean, quartz glass substrate 4 of about 1 mm thick, a
solution prepared by mixing an organic palladium compound solution
(Catapaste CCP, available from Okuno Seiyaku Kogyo) with a
SiO.sub.2 liquid coating preparation (OCD, available from Tokyo
Ohka Kogyo) to have a molar ratio of SiO.sub.2:Pd of about 10:1 was
spin coated with a spinner. Thereafter the resulting coating was
baked for 1 hour at about 400.degree. C. to obtain a SiO.sub.2
insulating layer 5 having a film thickness of about 3,500 angstroms
and containing electron-emitting materials 9 (Pd fine particles)
.[.[see FIG. 33(a)].]. .Iadd.(see FIG. 33(a)).Iaddend..
Next, the insulating layer 5 was etched by photolithoetching with
use of an aqueous hydrofluoric acid solution to form a stepped
portion 18 of about 3,500 angstroms high at the middle of the
substrate 4 .[.[see FIG. 33(b)].]. .Iadd.(see FIG.
33(b)).Iaddend..
Thereafter, Ni electrodes 1 and 2 of about 500 angstroms in film
thickness were formed by deposition utilizing EB vacuum deposition
to have the shape illustrated in FIG. 33(c) in the manner that the
stepped portion may not be completely covered.
Electron emitted bodies 3b were further provided on the surface of
a side wall of the insulating layer in the same manner as in
Example 19 .[.[see FIG. 33(d)].]. .Iadd.(see FIG.
33(d)).Iaddend..
Electron emission characteristics of the electron-emitting device
obtained according to the above process were measured to have
revealed that there was obtained electron emission of,
approximately, emitted electric current I.sub.e=4 .mu.A and
emission efficiency .alpha.=2.times.10.sup.-3, under applied device
voltage V.sub.f=14 V and lead-out voltage V.sub.a=1 kV.
Example 22
Example 21 was repeated except that the organic metal compound
solution that formed the electron-emitting bodies 3b in Example 21
was replaced by a SiO.sub.2 liquid coating preparation in which
SiO.sub.2 fine particles of about 100 angstroms in particle
diameter were dispersed, to form a similar electron-emitting
device. There were obtained substantially the same results as in
Example 21.
Example 23
Similar results were obtained also when the organic metal compound
solution employed to form the electron-emitting bodies 3b in
Example 20 was replaced by a coating preparation in which SnO.sub.2
fine particles of about 100 angstroms in particle diameter were
dissolved by dispersion together with an organic binder.
Example 24
On a substrate a SiO.sub.2 film is vacuum deposited to form an
insulating layer 5a, on which Pd is vacuum deposited in a thickness
of 500 angstroms (electron-emitting layer 3a) and further an
insulating layer 5b is formed by vacuum deposition of a SiO.sub.2
film .[.[see FIG. 34(a)].]. .Iadd.(see FIG. 34(a)).Iaddend..
Next, the insulating layers 5a, 5b and electron-emitting layer 3a
are etched to form a stepped portion 18 .[.[see FIG. 34(b)].].
.Iadd.(see FIG. 34(b)).Iaddend..
Thereafter, Ni is applied by masking vacuum deposition in a
thickness of 500 angstroms to form electrodes 1 and 2 .[.[see FIG.
34(c)].]. .Iadd.(see FIG. 34(c)).Iaddend..
An organic palladium solution is further coated on the surface of
the device substrate, followed by baking to provide
electron-emitting bodies 3b on the sidewall of the stepped portion
.[.[see FIG. 34(d)].]. .Iadd.(see FIG. 34(d)).Iaddend..
The resulting electron-emitting device has the structure that
electron-emitting materials are present only in the vicinity of the
stepped portion in contrast with Example 20.
Good results were obtained as in Example 20.
Example 25
Example 24 was repeated to obtain an electron-emitting device,
except that the Pd fine particles film of the electron-emitting
layer 3a in Example 24 as replaced by a layer obtained by coating a
Pd fine particles dispersed solution as shown in FIG. 35.
There was obtained the same electron emission.
Example 26
The same electron emission as in Example 20 was obtained also in a
device in which as illustrated in FIG. 36 a Pd vapor-deposited film
serving as an electron-emitting layer 3a was disposed in an
insulating layer 5 containing electron-emitting materials 9 as Pd
fine particles, a stepped portion was formed, and electron-emitting
bodies 3b were further provided on the sidewall of the stepped
portion by coating an organic palladium solution followed by
baking.
Example 27
In the constitution illustrated in FIG. 37, on a glass substrate 4,
titanium electrodes 1 and 2 were formed with a thickness of 1,000
angstroms. L=0.8 .mu.m and W=300 .mu.m, and thereafter SnO.sub.2
and Pd were arranged as fine particles in a dispersed state between
the electrodes.
As a method therefor, a SnO.sub.2 dispersion (SnO.sub.2: 1 g;
solvent: MEK (methyl ethyl ketone)/cyclohexanone=3/1, 1,000 cc;
butyral: 1 g) having a primary particle diameter of 80 to 200
angstroms was spin-coated, followed by heating. A Pd dispersion
having a primary particle diameter of about 100 angstroms was
further spin coated, followed by heating to obtain an
electron-emitting device.
A voltage of about 10.sup.-5 Torr was applied between the
electrodes of the device thus formed. As a result, there was
obtained an electron emission current of 1.1 .mu.A under an applied
voltage of 15 V.
Thus, substantially the same electron emission is obtained even
under the applied voltage of lower by approximately 5 volts than
that of the device containing no Pd fine particles and solely
comprised of SnO.sub.2. In this manner, the drive voltage was able
to be lowered by the device containing different kind of fine
particles.
Example 28
In regard to the SnO.sub.2 dispersion of Example 27, a dispersion
of SnO.sub.2 of 80 to 200 angstroms in particle diameter and a
dispersion of SnO.sub.2 of about 3,000 angstroms in particle
diameter were prepared, and two kinds of the SnO.sub.2 dispersions
were coated in the same manner as in Example 27 but in one step for
each dispersion, thus arranging fine particles in a dispersed state
to obtain a electron-emitting device.
As electron emission characteristics of the device thus formed,
there was obtained an electron emission current of about 1.1 .mu.A
under an applied voltage of 17 V.
Thus, substantially the same electron emission is obtained even
under the applied voltage of about 3 V lower than that of the
device obtained by coating in two steps the dispersions of
SnO.sub.2 of 80 to 200 angstroms in particle diameter. In this
manner, the drive voltage was able to be lowered by adding the
particles having a larger particle diameter.
Example 29
Using each of the electron-emitting devices prepared in the above
examples, image display apparatuses as shown in FIGS. 39A, 39B and
39C were prepared. Herein, a pitch of device wiring electrodes 33,
wherein 33-a and 33-b constitute a pair, is 2 mm, a pitch in
electron-emitting regions 30 is 2 mm. Face plate (FP) was located
at 4 mm distance from substrate (S). Grid electrodes (GR) were
located at 10 .mu.m distance from the surface of the
electron-emitting device.
How to operate the present embodiment will be described below.
The voltage on the surface of the fluorescent member is set to be
from 0.8 kV to 1.5 kV. In FIGS. 39B and 30C, a voltage pulse of 14
V is applied to a pair of device wiring electrodes 33-a and 33-b so
that electrons are emitted from the plural electron-emitting
devices arranged in linear fashion. The electrons thus emitted are
brought under ON/OFF control of electron beams in accordance with
information signals by applying a voltage to the group of
modulating electrodes. The electrons drawn out by the modulating
electrodes impinge against the fluorescent member under
acceleration. The fluorescent member performs a line of display in
accordance with the information signals. Next, a voltage pulse of
14 V is applied to the adjacent device wiring electrode 33-a and
33-b to carry out a line of display as in the above. This operation
is successively repeated to form a picture of the image. More
specifically, having the group of electron-emitting devices serve
as scanning electrodes, the scanning electrodes and the modulating
electrodes for the XY matrix, and thus the image is displayed.
The electron-emitting device according to the present embodiment
can drive in response to a voltage pulse of 100 picoseconds or
less, and hence the displaying of an image in 1/30 second for one
picture enables formation of 10,000 lines or more of scanning
lines.
The voltage applied to the group of modulating electrodes (GR) is 0
V or less, or 30 V or more, under which the electron beams are
OFF-controlled or On-controlled, respectively. The mount of
electron beams continuously varies at voltages between 0 V and 30
V. Thus, it is possible to effect gradational display according to
the magnitude of the voltage applied to the modulating
electrode.
.[.[Effect of the invention].]. .Iadd.Effect of the
invention.Iaddend.
As described above, according to the electron-emitting device of
the present invention and the method for preparing the same,
electron-emitting devices that can have stable structure even if
the electrode spacing having the electron-emitting materials is
made very narrow can be formed without applying the forming
required in the prior art.
Accordingly, the electron-emitting devices prepared by the present
invention are quite free from the difficulties conventionally
accompanying the forming treatment, so that it becomes possible to
manufacture the devices having less irregularities in
characteristics, in a large number and with ease, bringing about
great industrial utility.
The electron-emitting device obtained by the present invention can
also be utilized in planar display devices in which the
electron-emitting devices are mounted in a single plane and
electrons emitted by applying a voltage are accelerated to
stimulate phosphors to effect light-emission.
An electron-emitting device that is stabler and of longer life and
also has a good efficiency can also be obtained by bringing the
electrode constitution into a multi-layer constitution.
Also, the electron-emitting device in which the fine particles are
fixed in the insulating layer is free of any movement of the fine
particles during drive, and thus can be an electron-emitting device
that is stable and of elongated life.
The electron emission efficiency can be improved by suitably
adjusting the density of the fine particles.
The electron-emitting device having the semiconductor layer as
illustrated in FIG. 17 makes it possible to lower the drive voltage
by controlling the electrical resistance of the semiconductor, and
also can be effective in improvement of emitted currents.
* * * * *