Reactor tube for semiconductor production devices

Nagata October 17, 2

Patent Grant D800080

U.S. patent number D800,080 [Application Number D/578,225] was granted by the patent office on 2017-10-17 for reactor tube for semiconductor production devices. This patent grant is currently assigned to Tokyo Electron Limited. The grantee listed for this patent is Tokyo Electron Limited. Invention is credited to Tomoyuki Nagata.


United States Patent D800,080
Nagata October 17, 2017

Reactor tube for semiconductor production devices

Claims

CLAIM The ornamental design for a reactor tube for semiconductor production devices, as shown and described.
Inventors: Nagata; Tomoyuki (Iwate, JP)
Applicant:
Name City State Country Type

Tokyo Electron Limited

Tokyo

N/A

JP
Assignee: Tokyo Electron Limited (Tokyo, JP)
Appl. No.: D/578,225
Filed: September 20, 2016

Foreign Application Priority Data

Mar 30, 2016 [JP] 2016-006969
Current U.S. Class: D13/182
Current International Class: 1303
Field of Search: ;D13/158-177,179,180,182,199,122,144 ;D10/104.1,108,61,62 ;D11/143,144,152 ;D14/216,240,356,509,210 ;D17/22 ;D23/323,328,333,335,336,337,341,352,357,370,385,386,399,400,499,331,406 ;D12/303,315 ;118/50,722,715,724,733 ;205/118,123 ;D9/500,452,454 ;D15/122,199,138 ;D8/16,19,323,399,45 ;D16/135,219,302 ;D7/367,404,503,523,584,586,624.1,630,340,677 ;D26/24,36,110 ;D19/40 ;D25/100 ;D6/332

References Cited [Referenced By]

U.S. Patent Documents
1995204 March 1935 Ford
D114756 May 1939 Fuller
D137905 May 1944 Kardux
2532329 December 1950 Premo
D192383 March 1962 Rogers
D340874 November 1993 Nicholson
D367926 March 1996 Lin
D434440 November 2000 Lawton
D569996 May 2008 Zhu
D621526 August 2010 Falligant
D668975 October 2012 Phillips
D719114 December 2014 Yamazaki
2007/0098605 May 2007 Johns
Primary Examiner: Asch; Jeffrey D
Assistant Examiner: Bell; Tracey J
Attorney, Agent or Firm: Ipusa, PLLC

Description



FIG. 1 is a front view of a reactor tube for semiconductor production devices, showing our new design;

FIG. 2 is an enlarged cross-sectional view, along line 2-2 in FIG. 1;

FIG. 3 is a top plan view thereof;

FIG. 4 is a bottom plan view thereof;

FIG. 5 is a right side view thereof;

FIG. 6 is a left side view thereof; and,

FIG. 7 is a cross-sectional view, along line 7-7 in FIG. 6, shown with additional environment related to use being shown in broken lines.

The broken lines shown in the drawings represent portions of the reactor tube for semiconductor production devices that form no part of the claimed design. The rear view of the reactor tube for semiconductor production devices has been omitted because it does not illustrate the claimed design.

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