RF electrode for a process tube of semiconductor manufacturing apparatus

Description

FIG. 1 is a front view of a RF electrode for a process tube of semiconductor manufacturing apparatus showing our new design;

FIG. 2 is a back view thereof;

FIG. 3 is a plan view thereof;

FIG. 4 is a left side view thereof;

FIG. 5 is a right side view thereof;

FIG. 6 is an enlarged sectional view taken along with line VI--VI of FIG. 1;

FIG. 7 is an enlarged sectional view taken along with line VII--VII of FIG. 1;

FIG. 8 is a perspective view as seen from the front side thereof;

FIG. 9 is a reference drawing showing a state of use of a RF electrode; and,

FIG. 10 is a reference drawing showing a state of use of a RF electrode.

Claims

CLAIM The ornamental design for a RF electrode for a process tube of semiconductor manufacturing apparatus, as shown and described.

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Inventors:	Ishii; Katsutoshi (Tokyo, JP), Matsuura; Hiroyuki (Tokyo, JP)
Assignee:	Tokyo Electron Limited (Tokyo-To, JP)
Appl. No.:	D/260,830
Filed:	June 2, 2006

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Foreign Application Priority Data

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Dec 27, 2005 [JP]			2005-038333

Current U.S. Class:	D13/182
Current International Class:	1303
Field of Search:	;D13/199,182,181,180,165,166 ;D24/187,170,144,233 ;205/98,256,272,284,292,336,375,399,400,528,576,588,708,730,143,148,732,733,737,738,739 ;385/40 ;314/34

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References Cited [Referenced By]

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U.S. Patent Documents

2481079	September 1949	Casey
3323954	June 1967	Goorissen
D320446	October 1991	Grossi et al.
D436138	January 2001	Chiasson
6277260	August 2001	Kaufman et al.

Primary Examiner: Spear; Robert M.
Assistant Examiner: Dworzecka; Anna K
Attorney, Agent or Firm: Smith, Gambrell & Russell, LLP