U.S. patent number D493,873 [Application Number D/171,429] was granted by the patent office on 2004-08-03 for heating gas supplier for semiconductor manufacturing equipment.
This patent grant is currently assigned to Tokyo Electron Limited. Invention is credited to Daisuke Hayashi.
United States Patent |
D493,873 |
Hayashi |
August 3, 2004 |
Heating gas supplier for semiconductor manufacturing equipment
Claims
I claim the ornamental design for heating gas supplier for
semiconductor manufacturing equipment, as shown and described.
Inventors: |
Hayashi; Daisuke (Nirasaki,
JP) |
Assignee: |
Tokyo Electron Limited
(Tokyo-To, JP)
|
Appl.
No.: |
D/171,429 |
Filed: |
November 21, 2002 |
Foreign Application Priority Data
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|
|
|
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May 24, 2002 [JP] |
|
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2002-013841 |
May 24, 2002 [JP] |
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2002-013843 |
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Current U.S.
Class: |
D23/314 |
Current International
Class: |
2301 |
Field of
Search: |
;D23/314,386,499
;427/74,76,78,580 ;134/95.2,108,102.1 ;261/142 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Vinson; Brian N.
Attorney, Agent or Firm: Ladas & Parry
Description
This article is transparent. This article is used in semiconductor
manufacturing equipment. A heating gas is supplied to the rear face
of a semiconductor wafer in order to drive heat exchange between a
lower electrode and the rear face of the semiconductor wafer. This
article is installed in a tube for supplying the heating gas. In
the front view drawing, the spiral forms three two-cavity ducts.
The spiral ducts act as gas passages in order to prevent an
abnormal discharge. The outer diameter of this article is between
about 25 mm and 10 mm and the height is between about 60 mm and 70
mm. This article is made of quartz. Other embodiments (not shown)
are translucent or opaque in whole or part and/or may be made of
other materials.
FIG. 1 is a top/front perspective view of a first embodiment of a
heating gas supplier for semiconductor manufacturing equipment;
FIG. 2 is a front elevational view thereof;
FIG. 3 is a rear elevational view thereof;
FIG. 4 is a right side elevational view thereof;
FIG. 5 is a left side elevational view thereof;
FIG. 6 is a top plan view thereof;
FIG. 7 is a bottom plan view thereof;
FIG. 8 is a sectional view taken along the line 8--8 in FIG. 6;
FIG. 9 is a top/front perspective view of a second embodiment of
the heating gas supplier for semiconductor manufacturing
equipment;
FIG. 10 is a front elevational view thereof, the rear elevational
view being a mirror image thereof and, therefore, not shown;
FIG. 11 is a right side elevational view thereof, the left side
elevational view being a mirror image thereof and, therefore, not
shown;
FIG. 12 is a top plan view thereof;
FIG. 13 is a bottom plan view thereof; and,
FIG. 14 is a sectional view taken along the line 14--14 in FIG.
12.
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