Heating gas supplier for semiconductor manufacturing equipment

Hayashi August 3, 2

Patent Grant D493873

U.S. patent number D493,873 [Application Number D/171,429] was granted by the patent office on 2004-08-03 for heating gas supplier for semiconductor manufacturing equipment. This patent grant is currently assigned to Tokyo Electron Limited. Invention is credited to Daisuke Hayashi.


United States Patent D493,873
Hayashi August 3, 2004

Heating gas supplier for semiconductor manufacturing equipment

Claims

I claim the ornamental design for heating gas supplier for semiconductor manufacturing equipment, as shown and described.
Inventors: Hayashi; Daisuke (Nirasaki, JP)
Assignee: Tokyo Electron Limited (Tokyo-To, JP)
Appl. No.: D/171,429
Filed: November 21, 2002

Foreign Application Priority Data

May 24, 2002 [JP] 2002-013841
May 24, 2002 [JP] 2002-013843
Current U.S. Class: D23/314
Current International Class: 2301
Field of Search: ;D23/314,386,499 ;427/74,76,78,580 ;134/95.2,108,102.1 ;261/142

References Cited [Referenced By]

U.S. Patent Documents
6277201 August 2001 Nishikawa
6412501 July 2002 Onoda et al.
6635307 October 2003 Huang et al.
Primary Examiner: Vinson; Brian N.
Attorney, Agent or Firm: Ladas & Parry

Description



This article is transparent. This article is used in semiconductor manufacturing equipment. A heating gas is supplied to the rear face of a semiconductor wafer in order to drive heat exchange between a lower electrode and the rear face of the semiconductor wafer. This article is installed in a tube for supplying the heating gas. In the front view drawing, the spiral forms three two-cavity ducts. The spiral ducts act as gas passages in order to prevent an abnormal discharge. The outer diameter of this article is between about 25 mm and 10 mm and the height is between about 60 mm and 70 mm. This article is made of quartz. Other embodiments (not shown) are translucent or opaque in whole or part and/or may be made of other materials.

FIG. 1 is a top/front perspective view of a first embodiment of a heating gas supplier for semiconductor manufacturing equipment;

FIG. 2 is a front elevational view thereof;

FIG. 3 is a rear elevational view thereof;

FIG. 4 is a right side elevational view thereof;

FIG. 5 is a left side elevational view thereof;

FIG. 6 is a top plan view thereof;

FIG. 7 is a bottom plan view thereof;

FIG. 8 is a sectional view taken along the line 8--8 in FIG. 6;

FIG. 9 is a top/front perspective view of a second embodiment of the heating gas supplier for semiconductor manufacturing equipment;

FIG. 10 is a front elevational view thereof, the rear elevational view being a mirror image thereof and, therefore, not shown;

FIG. 11 is a right side elevational view thereof, the left side elevational view being a mirror image thereof and, therefore, not shown;

FIG. 12 is a top plan view thereof;

FIG. 13 is a bottom plan view thereof; and,

FIG. 14 is a sectional view taken along the line 14--14 in FIG. 12.

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