Semiconductor element

Description

FIG. 1 is a top, left, front perspective view of a semiconductor element showing our new design;

FIG. 2 is a bottom, left, front perspective view thereof;

FIG. 3 is a front elevational view thereof; and

FIG. 4 is a rear elevational view thereof.

FIG. 5 is a left side elevational view thereof;

FIG. 6 is a right side elevational view thereof;

FIG. 7 is a top plan view thereof; and,

FIG. 8 is a bottom plan view thereof.

The portions in even broken lines are for illustrative purposes only and form no part of the claimed design. The portions in dot-dash broken lines define, but are not included in, the boundaries of the claimed design.

Claims

The ornamental design for a semiconductor element, as shown and described.

---

Inventors:	Iwafuchi; Toshiaki (Tokyo, JP), Oohata; Toyoharu (Tokyo, JP), Doi; Masato (Tokyo, JP)
Assignee:	Sony Corporation (Tokyo, JP)
Appl. No.:	D/154,046
Filed:	January 17, 2002

---

Current U.S. Class:	D13/182
Current International Class:	1303
Field of Search:	;D13/182 ;D14/172,212,233 ;257/10,77,103,190,622,627 ;216/11 ;313/309,310,311,327 ;428/332 ;438/20 ;445/24,50,51,58

---

References Cited [Referenced By]

---

U.S. Patent Documents

4685996	August 1987	Busta et al.
5176557	January 1993	Okunuki et al.
5201681	April 1993	Okunuki et al.
5399238	March 1995	Kumar
5482002	January 1996	Kawade et al.
5572041	November 1996	Betsui et al.
5861707	January 1999	Kumar
6051849	April 2000	Davis et al.
6185013	February 2001	Harrington et al.
6252261	June 2001	Usui et al.
6413627	July 2002	Motoki et al.

Foreign Patent Documents

	2830814		Dec 1998		JP
	2000-150391		May 2000		JP
	WO 02/07231		Jan 2002		WO
	WO 02/07232		Jan 2002		WO

Other References

D Kapolnek et al., "Spatial control of InGaN luminescence by MOCVD selective epitaxy," Journal of Crystal Growth, vols. 189/190, pp. 83-86, Elsevier Science (1998). . J. Wang et al., "Fabrication of nanoscale structures of InGaN by MOCVD lateral overgrowth," Journal of Crystal Growth, vol. 197, pp. 48-53, Elsevier Science (1999). . W. Yang et al., "Single-crystal GaN pyramids grown on (111) Si substrates by selective lateral overgrowth," Journal of Crystal Growth, vol. 204, pp. 270-274, Elsevier Science (1999). . Raj Singh et al., "Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique," MRS Internet Journal of Nitride Semiconductor Research, vol. 3, Article 13, pp. 1-4, The Materials Research Society (1998). . Zhigang Mao et al., "Defects in GaN Pyramids Grown on Si (111) Substrates by Selective Lateral Overgrowth," MRS Internet Journal of Nitride Semiconductor Research, vol. 4S1, G3.13, pp. 1-6, The Materials Research Society (1999). . Koichi Tachibana et al., "Selective grough of InGaN quantum dot structures and their microphotoluminescence at room temperature," Applied Physics Letters, vol. 76, No. 22, pp. 3212-3214 American Institute of Physics (2000). . Takao Someya et al., "Ji-sedai Chikkabutsu Handotai Laser (Next Generation Nitride Semiconductor Laser," Oyo Butsuri (Applied Physics), vol. 69, No. 10, pp. 1198-1199, (2000) with partial translation..

Primary Examiner: Hyder; Philip S.
Assistant Examiner: Sikder; Selina
Attorney, Agent or Firm: Rader, Fishman & Grauer PLLC