U.S. patent number D390,833 [Application Number D/067,087] was granted by the patent office on 1998-02-17 for piezolectric conversion type semiconductor device.
This patent grant is currently assigned to Fujikura Ltd.. Invention is credited to Tatsuya Ito, Hiroshi Nishida, Takashi Takizawa.
United States Patent |
D390,833 |
Takizawa , et al. |
February 17, 1998 |
**Please see images for:
( Certificate of Correction ) ** |
Piezolectric conversion type semiconductor device
Claims
The ornamental design for a piezoelectric conversion type
semiconductor device, as show and described.
Inventors: |
Takizawa; Takashi (Kawasaki,
JP), Ito; Tatsuya (Akita, JP), Nishida;
Hiroshi (Akita, JP) |
Assignee: |
Fujikura Ltd. (Tokyo,
JP)
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Appl.
No.: |
D/067,087 |
Filed: |
March 4, 1997 |
Foreign Application Priority Data
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Sep 9, 1996 [JP] |
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8-26572 |
Sep 9, 1996 [JP] |
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8-26572 |
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Current U.S.
Class: |
D13/182;
D13/101 |
Current International
Class: |
1303 |
Field of
Search: |
;D13/101,123,125,182
;73/721 ;257/416-418 ;338/4,42 |
References Cited
[Referenced By]
U.S. Patent Documents
Other References
One chip integrated pressure sensor catalog published Apr. 1, 1992.
.
Motorola catalog of pressure sensor device data published Jan. 1,
1994..
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Primary Examiner: Gandy; James
Assistant Examiner: Matta; Cathon B.
Attorney, Agent or Firm: Laff, Whitesel, Conte & Saret,
Ltd.
Description
FIG. 1 is a front elevational view of a piezoelectric conversion
type semiconductor device, showing our new design;
FIG. 2 is a right side elevational view thereof; the opposite side
being an identical thereof;
FIG. 3 is a rear elevational view thereof;
FIG. 4 is a top plan view thereof;
FIG. 5 is a bottom plan view thereof;
FIG. 6 is a front elevational view of a second embodiment of the
piezoelectric conversion type semiconductor device;
FIG. 7 is a right side elevational view thereof; the opposite side
being a mirror image thereof;
FIG. 8 is a rear elevational view thereof;
FIG. 9 is a top plan view thereof;
FIG. 10 is a bottom plan view thereof;
FIG. 11 is a front elevational view of a third embodiment of the
piezoelectric conversion type semiconductor device;
FIG. 12 is a right side elevational view thereof; the opposite side
being an identical thereof;
FIG. 13 is a rear elevational view thereof;
FIG. 14 is a top plan view thereof;
FIG. 15 is a bottom plan view thereof;
FIG. 16 is a front elevational view of a fourth embodiment of the
piezoelectric conversion type semiconductor device;
FIG. 17 is a right side elevational view thereof; the opposite side
being a mirror image thereof;
FIG. 18 is a rear elevational view thereof;
FIG. 19 is a top plan view thereof; and,
FIG. 20 is a bottom plan view thereof.
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