Piezolectric conversion type semiconductor device

Takizawa , et al. February 17, 1

Patent Grant D390833

U.S. patent number D390,833 [Application Number D/067,087] was granted by the patent office on 1998-02-17 for piezolectric conversion type semiconductor device. This patent grant is currently assigned to Fujikura Ltd.. Invention is credited to Tatsuya Ito, Hiroshi Nishida, Takashi Takizawa.


United States Patent D390,833
Takizawa ,   et al. February 17, 1998
**Please see images for: ( Certificate of Correction ) **

Piezolectric conversion type semiconductor device

Claims

The ornamental design for a piezoelectric conversion type semiconductor device, as show and described.
Inventors: Takizawa; Takashi (Kawasaki, JP), Ito; Tatsuya (Akita, JP), Nishida; Hiroshi (Akita, JP)
Assignee: Fujikura Ltd. (Tokyo, JP)
Appl. No.: D/067,087
Filed: March 4, 1997

Foreign Application Priority Data

Sep 9, 1996 [JP] 8-26572
Sep 9, 1996 [JP] 8-26572
Current U.S. Class: D13/182; D13/101
Current International Class: 1303
Field of Search: ;D13/101,123,125,182 ;73/721 ;257/416-418 ;338/4,42

References Cited [Referenced By]

U.S. Patent Documents
D318646 July 1991 Karbassi
D330363 October 1992 Inoi
5031462 July 1991 Lam
5184107 February 1993 Maurer
5459351 October 1995 Bender

Other References

One chip integrated pressure sensor catalog published Apr. 1, 1992. .
Motorola catalog of pressure sensor device data published Jan. 1, 1994..

Primary Examiner: Gandy; James
Assistant Examiner: Matta; Cathon B.
Attorney, Agent or Firm: Laff, Whitesel, Conte & Saret, Ltd.

Description



FIG. 1 is a front elevational view of a piezoelectric conversion type semiconductor device, showing our new design;

FIG. 2 is a right side elevational view thereof; the opposite side being an identical thereof;

FIG. 3 is a rear elevational view thereof;

FIG. 4 is a top plan view thereof;

FIG. 5 is a bottom plan view thereof;

FIG. 6 is a front elevational view of a second embodiment of the piezoelectric conversion type semiconductor device;

FIG. 7 is a right side elevational view thereof; the opposite side being a mirror image thereof;

FIG. 8 is a rear elevational view thereof;

FIG. 9 is a top plan view thereof;

FIG. 10 is a bottom plan view thereof;

FIG. 11 is a front elevational view of a third embodiment of the piezoelectric conversion type semiconductor device;

FIG. 12 is a right side elevational view thereof; the opposite side being an identical thereof;

FIG. 13 is a rear elevational view thereof;

FIG. 14 is a top plan view thereof;

FIG. 15 is a bottom plan view thereof;

FIG. 16 is a front elevational view of a fourth embodiment of the piezoelectric conversion type semiconductor device;

FIG. 17 is a right side elevational view thereof; the opposite side being a mirror image thereof;

FIG. 18 is a rear elevational view thereof;

FIG. 19 is a top plan view thereof; and,

FIG. 20 is a bottom plan view thereof.

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