U.S. patent number D319,045 [Application Number 07/181,256] was granted by the patent office on 1991-08-13 for semi-conductor substrate with conducting pattern.
This patent grant is currently assigned to Ibiden Co., Ltd.. Invention is credited to Nobumichi Goto, Terutomi Hasegawa.
United States Patent |
D319,045 |
Hasegawa , et al. |
* August 13, 1991 |
**Please see images for:
( Certificate of Correction ) ** |
Semi-conductor substrate with conducting pattern
Claims
The ornamental design for a semi-conductor with conducting pattern,
as shown.
Inventors: |
Hasegawa; Terutomi (Ogaki,
JP), Goto; Nobumichi (Seki, JP) |
Assignee: |
Ibiden Co., Ltd. (Ogaki,
JP)
|
[*] Notice: |
The portion of the term of this patent
subsequent to July 23, 2005 has been disclaimed. |
Appl.
No.: |
07/181,256 |
Filed: |
April 13, 1988 |
Current U.S.
Class: |
D13/182 |
Field of
Search: |
;D13/12,20,99
;361/401,403,404,405 ;357/70,72,74,80 ;174/52.4 ;437/209 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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0232837 |
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Aug 1987 |
|
EP |
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644662 |
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Feb 1985 |
|
JP |
|
647072 |
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Mar 1985 |
|
JP |
|
647074 |
|
Mar 1985 |
|
JP |
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647078 |
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Mar 1985 |
|
JP |
|
673983-1 |
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Mar 1986 |
|
JP |
|
673983 |
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Mar 1986 |
|
JP |
|
673984 |
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Mar 1986 |
|
JP |
|
0035653 |
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Feb 1987 |
|
JP |
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Primary Examiner: Lucas; Susan J.
Assistant Examiner: Sincavage; Joel
Attorney, Agent or Firm: Lorusso & Loud
Description
FIG. 1 is a top perspective view of a substrate with conducting
pattern showing our new design;
FIG. 2 is a bottom perspective view thereof;
FIG. 3 is a right side elevational view thereof;
FIG. 4 is a left side elevational view thereof;
FIG. 5 is a rear elevational view thereof; and
FIG. 6 is a front elevational view thereof;
FIG. 7 is a top plan view thereof; and
FIG. 8 is a bottom plan view thereof.
* * * * *