U.S. patent number 9,274,352 [Application Number 14/522,738] was granted by the patent office on 2016-03-01 for actively tunable polar-dielectric optical devices.
This patent grant is currently assigned to The United States of America, as represented by the Secretary of the Navy. The grantee listed for this patent is Joshua D. Caldwell, Orest J. Glembocki, James Peter Long, Jeffrey C. Owrutsky. Invention is credited to Joshua D. Caldwell, Orest J. Glembocki, James Peter Long, Jeffrey C. Owrutsky.
United States Patent |
9,274,352 |
Long , et al. |
March 1, 2016 |
Actively tunable polar-dielectric optical devices
Abstract
Optical devices that include one or more structures fabricated
from polar-dielectric materials that exhibit surface phonon
polaritons (SPhPs), where the SPhPs alter the optical properties of
the structure. The optical properties lent to these structures by
the SPhPs are altered by introducing charge carriers directly into
the structures. The carriers can be introduced into these
structures, and the carrier concentration thereby controlled,
through optical pumping or the application of an appropriate
electrical bias.
Inventors: |
Long; James Peter (Accokeek,
MD), Caldwell; Joshua D. (Accokeek, MD), Owrutsky;
Jeffrey C. (Silver Spring, MD), Glembocki; Orest J.
(Alexandria, VA) |
Applicant: |
Name |
City |
State |
Country |
Type |
Long; James Peter
Caldwell; Joshua D.
Owrutsky; Jeffrey C.
Glembocki; Orest J. |
Accokeek
Accokeek
Silver Spring
Alexandria |
MD
MD
MD
VA |
US
US
US
US |
|
|
Assignee: |
The United States of America, as
represented by the Secretary of the Navy (Washington,
DC)
|
Family
ID: |
51296845 |
Appl.
No.: |
14/522,738 |
Filed: |
October 24, 2014 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20150063739 A1 |
Mar 5, 2015 |
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Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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14174927 |
Feb 7, 2014 |
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61775837 |
Mar 11, 2013 |
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61764755 |
Feb 14, 2013 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
B82Y
20/00 (20130101); G01J 3/12 (20130101); G02F
1/009 (20130101); G02F 1/0136 (20130101); G02F
1/0333 (20130101); G02F 1/292 (20130101); G02F
1/0126 (20130101); G02B 26/02 (20130101); G02F
1/29 (20130101); G02F 1/011 (20130101); G02F
2203/10 (20130101); G02F 2203/15 (20130101); G02F
2203/11 (20130101); G02F 2203/13 (20130101); Y10S
977/932 (20130101); G01J 2003/1213 (20130101); G02F
2202/32 (20130101); G02B 6/1225 (20130101); G02F
2202/10 (20130101); G02F 2202/30 (20130101) |
Current International
Class: |
G01J
5/20 (20060101); G02F 1/01 (20060101); G02B
26/02 (20060101); G01J 3/12 (20060101); B82Y
20/00 (20110101) |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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0390651 |
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May 1996 |
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EP |
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2009200461 |
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Sep 2009 |
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JP |
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1020120024030 |
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Mar 2012 |
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KR |
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WO 2012110520 |
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Aug 2012 |
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WO |
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WO 2012110522 |
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Aug 2012 |
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WO |
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Other References
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Plasmonics, available at
http://metamaterials.duke.edu/research/metamaterials. cited by
examiner .
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corresponding application PCT/US2014/015202. cited by applicant
.
K.Y. Lau, N. Bar-Chaim, I. Ury, Ch. Harder, and A. Yariv, "Direct
amplitude modulation of short-cavity GaAs lasers up to X-band
frequencies," Appl. Phys. Lett, 43 (1) (1983). cited by applicant
.
Louay Eldada, "Optical communication components," Review Of
Scientific Instruments, vol. 75, No. 3, pp. 575-593 (2004). cited
by applicant .
N.B. Singh, D. Kahler, D.J. Knuteson, M. Gottlieb, D. Suhre, A.
Berghmans, B. Wagner, J. Hedrick, T. Karr, and J.J. Hawkins,
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imager based on an acousto-optic tunable filter," Opt. Engineering
2008, 47 (1), 013201. cited by applicant .
R. Bukasov and J.S. Shumaker-Parry, "Silver nanocrescents with
infrared plasmonic properties as tunable substrates for surface
enhanced infrared absorption spectroscopy," Anal. Chem. 2009, 81,
4531-4535. cited by applicant .
R.F. Aroca, D.J. Ross, and C. Domingo, "Surface-enhanced infrared
spectroscopy," Appl. Spectrosc. 2004, 58, 324A-338A. cited by
applicant .
M.S. Anderson, "Enhanced Infrared Absorption with Dielectric
Nanoparticles," Appl. Phys. Lett. 2003, 83 (14), 2964-2966. cited
by applicant .
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based on depletion-type semiconductor devices" J. Opt. 2012, 14,
114013. cited by applicant .
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Giannini, F. J. Bezares, J.P. Long, J.C. Owrutsky, I. Vurgaftman,
J.G. Tischler, V. D. Wheeler, N.D. Bassim, L.M. Shirey, R. Kasica,
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resonators," Nano Lett. 2013, 13, 3690-3697. cited by applicant
.
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surface plasmon polaritons," Physics Reports, 2005, 81, 131-314.
cited by applicant .
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thermal emitters," Nature Photonics 2009, 3, 658-661. cited by
applicant .
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radiative, non-radiative and photothermal properties of gold
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cited by applicant.
|
Primary Examiner: Makiya; David J
Assistant Examiner: Malkowski; Kenneth J
Attorney, Agent or Firm: US Naval Research Laboratory
Barritt; Joslyn
Parent Case Text
CROSS-REFERENCE
This application is a Continuation-in-part of, and claims the
benefit of priority under 35 U.S.C. .sctn.120 based on, U.S. patent
application Ser. No. 14/174,927 filed on Feb. 7, 2014, which in
turn is a Nonprovisional of, and claims the benefit of priority
under 35 U.S.C. .sctn.119 based on, U.S. Provisional Patent
Application No. 61/754,755 filed on Feb. 14, 2013 and U.S.
Provisional Patent Application No. 61/775,837 filed on Mar. 11,
2013, all of which are hereby incorporated by reference into the
present application in their entirety.
Claims
What is claimed is:
1. An actively tunable polar-dielectric optical device, comprising:
a plurality of polar-dielectric SPhP nanoantennas fabricated from a
plurality of polar-dielectric materials, a first portion of each
nanoantenna being fabricated from a first polar-dielectric material
and a second portion of each nanoantenna being fabricated from a
second polar-dielectric material, each of the first and second
polar-dielectric materials being configured to exhibit surface
phonon polaritons (SPhPs) when it is exposed to a corresponding
incident infrared optical beam having at least one wavelength
within a Reststrahlen band of that polar-dielectric material, a
presence of SPhPs in each of the polar-dielectric materials
affecting at least one optical property of the device, a value of
the at least one optical property of the structure being dependent
on a concentration of charge carriers in the polar-dielectric
materials; and a controllable source of charge carriers configured
to inject additional charge carriers into at least one of the
polar-dielectric materials; wherein the at least one optical
property is a resonant wavelength .lamda..sub.res in the first
polar-dielectric material; wherein a first injection of charge
carriers into the first polar-dielectric material is configured to
produce a desired permittivity .di-elect cons..sub.1 in the first
polar-dielectric material; and wherein a second injection of charge
carriers into the second polar-dielectric material is configured to
produce a desired index of refraction n.sub.2 in the second
polar-dielectric material; and wherein the first and second
injections of charge carriers are further configured to produce a
desired resonant wavelength .lamda..sub.res(.di-elect cons..sub.1,
n.sub.2) in the first polar-dielectric material.
2. The actively tunable polar-dielectric optical device according
to claim 1; wherein the plurality of polar-dielectric SPhP
nanoantennas are fabricated from a plurality of polar-dielectric
materials in a stacked structure.
3. The actively tunable polar-dielectric optical device according
to claim 1; wherein the plurality of polar-dielectric SPhP
nanoantennas are fabricated from a plurality of polar-dielectric
materials configured as a plurality of discrete conformally
overgrown layers.
4. The actively tunable polar-dielectric optical device according
to claim 1; wherein the plurality of polar-dielectric SPhP
nanoantennas are fabricated from a plurality of polar-dielectric
materials wherein the second polar-dielectric material is embedded
within a structure formed from the first polar-dielectric
material.
5. The actively tunable polar-dielectric optical device according
to claim 1; wherein the charge carrier source is a controllable
optical pump beam incident on the structure; and wherein the
injection of charge carriers into the at least one the
polar-dielectric materials is controlled by controlling an
intensity of the pump beam incident on that polar-dielectric
material.
6. The actively tunable polar-dielectric optical device according
to claim 1; wherein at least one of the polar-dielectric materials
is situated adjacent to one of a doped substrate, a metallic film,
and a van der Waals film, and wherein the charge carrier source is
a controllable electrical source operatively connected to the at
least one polar-dielectric material and to the one of the
substrate, the metallic film, and the van der Waals film, the
controllable electrical source being configured to controllably
inject charge carriers from the substrate, the metallic film, or
the van der Waals film into at the at least one polar-dielectric
material; wherein the injection of charge carriers into the at
least one polar-dielectric materials is controlled by controlling
an electrical signal from the electrical source.
7. The actively tunable polar-dielectric optical device according
to claim 1; wherein at least one of the polar-dielectric materials
is situated between a first substrate and a contact layer
comprising one of a second substrate, a metallic film or a van der
Waals film and wherein the charge carrier source is a controllable
electrical source operatively connected to the substrate and the
contact layer, the controllable electrical source being configured
to controllably inject charge carriers of one polarity (electron or
hole) from the substrate and of the opposite polarity from the
contact layer into at the at least one polar-dielectric material;
wherein the injection of charge carriers into the at least one
polar-dielectric materials is controlled by controlling an
electrical signal from the electrical source.
8. The actively tunable polar-dielectric optical device according
to claim 1, wherein at least one of the polar-dielectric materials
comprises SiC, GaN, BN, BC, AN, Al.sub.2O.sub.3, SiO.sub.2, or
AlGaN.
9. The actively tunable polar-dielectric optical device according
to claim 1, wherein at least one of a corresponding extraordinary
and a corresponding ordinary permittivity of at least one of the
polar-dielectric materials is actively tuned by controlling the
number of charge carriers injected into the device.
10. The actively tunable polar-dielectric optical device according
to claim 1, wherein a birefringence of at least one of the
polar-dielectric materials is actively tuned by controlling the
number of charge carriers injected into the device.
11. An actively tunable polar-dielectric optical device,
comprising: a plurality of polar-dielectric SPhP nanoantennas
fabricated from a plurality of polar-dielectric materials, a first
portion of each nanoantenna being fabricated from a first
polar-dielectric material and a second portion of each nanoantenna
being fabricated from a second polar-dielectric material, each of
the first and second polar-dielectric materials being configured to
exhibit surface phonon polaritons (SPhPs) when it is exposed to a
corresponding incident infrared optical beam having at least one
wavelength within a Reststrahlen band of that polar-dielectric
material, a presence of SPhPs in each of the polar-dielectric
materials affecting at least one optical property of the device, a
value of the at least one optical property of the structure being
dependent on a concentration of charge carriers in the
polar-dielectric materials; and a controllable source of charge
carriers configured to inject additional charge carriers into at
least one of the polar-dielectric materials; wherein a first
injection of charge carriers into the first polar-dielectric
material is configured to produce a desired permittivity .di-elect
cons..sub.1 and a desired index of refraction n.sub.1 in the first
polar-dielectric material; and wherein a second injection of charge
carriers into the second polar-dielectric material is configured to
produce a desired permittivity .di-elect cons..sub.2 and desired
index of refraction n.sub.2 in the second polar-dielectric
material; and wherein the first and second injections of charge
carriers are further configured to produce a desired first resonant
wavelength .lamda..sub.res(.di-elect cons..sub.1, n.sub.2) in the
first polar-dielectric material and a desired second resonant
wavelength .lamda..sub.rTes(.di-elect cons..sub.1, n.sub.1) in the
second polar-dielectric material.
12. The actively tunable polar-dielectric optical device according
to claim 11; wherein the plurality of polar-dielectric SPhP
nanoantennas are fabricated from a plurality of polar-dielectric
materials in a stacked structure.
13. The actively tunable polar-dielectric optical device according
to claim 11; wherein the plurality of polar-dielectric SPhP
nanoantennas are fabricated from a plurality of polar-dielectric
materials configured as a plurality of discrete conformally
overgrown layers.
14. The actively tunable polar-dielectric optical device according
to claim 11; wherein the plurality of polar-dielectric SPhP
nanoantennas are fabricated from a plurality of polar-dielectric
materials wherein the second polar-dielectric material is embedded
within a structure formed from the first polar-dielectric
material.
15. The actively tunable polar-dielectric optical device according
to claim 11; wherein the charge carrier source is a controllable
optical pump beam incident on the structure; and wherein the
injection of charge carriers into the at least one the
polar-dielectric materials is controlled by controlling an
intensity of the pump beam incident on that polar-dielectric
material.
16. The actively tunable polar-dielectric optical device according
to claim 11; wherein at least one of the polar-dielectric materials
is situated adjacent to one of a doped substrate, a metallic film,
and a van der Waals film, and wherein the charge carrier source is
a controllable electrical source operatively connected to the at
least one polar-dielectric material and to the one of the
substrate, the metallic film, and the van der Waals film, the
controllable electrical source being configured to controllably
inject charge carriers from the substrate, the metallic film, or
the van der Waals film into at the at least one polar-dielectric
material; wherein the injection of charge carriers into the at
least one polar-dielectric materials is controlled by controlling
an electrical signal from the electrical source.
17. The actively tunable polar-dielectric optical device according
to claim 11; wherein at least one of the polar-dielectric materials
is situated between a first substrate and a contact layer
comprising one of a second substrate, a metallic film or a van der
Waals film and wherein the charge carrier source is a controllable
electrical source operatively connected to the substrate and the
contact layer, the controllable electrical source being configured
to controllably inject charge carriers of one polarity (electron or
hole) from the substrate and of the opposite polarity from the
contact layer into at the at least one polar-dielectric material;
wherein the injection of charge carriers into the at least one
polar-dielectric materials is controlled by controlling an
electrical signal from the electrical source.
18. The actively tunable polar-dielectric optical device according
to claim 11, wherein at least one of the polar-dielectric materials
comprises SiC, GaN, BN, BC, AlN, Al.sub.2O.sub.3, SiO.sub.2, or
AlGaN.
19. The actively tunable polar-dielectric optical device according
to claim 11, wherein at least one of a corresponding extraordinary
and a corresponding ordinary permittivity of at least one of the
polar-dielectric materials is actively tuned by controlling the
number of charge carriers injected into the device.
20. The actively tunable polar-dielectric optical device according
to claim 11, wherein a birefringence of at least one of the
polar-dielectric materials is actively tuned by controlling the
number of charge carriers injected into the device.
21. An actively tunable polar-dielectric optical device,
comprising: an SPhP waveguide fabricated from a plurality of
polar-dielectric materials, a first portion of the waveguide being
fabricated from a first polar-dielectric material and a second
portion of the waveguide being fabricated from a second
polar-dielectric material, each of the first and second
polar-dielectric materials being configured to exhibit surface
phonon polaritons (SPhPs) when it is exposed to a corresponding
incident infrared optical beam having at least one wavelength
within a Reststrahlen band of that polar-dielectric material, a
presence of SPhPs in each of the polar-dielectric materials
affecting at least one optical property of the device, a value of
the at least one optical property of the structure being dependent
on a concentration of charge carriers in the polar-dielectric
materials; and a controllable source of charge carriers configured
to inject additional charge carriers into at least one of the
polar-dielectric materials; wherein the at least one optical
property is an index of refraction n.sub.r of the waveguide;
wherein the index of refraction n.sub.r is actively tuned by
controllably injecting a first plurality of charge carriers into
the first polar-dielectric material and controllably injecting a
second plurality of charge carriers into the second
polar-dielectric material.
22. The actively tunable polar-dielectric optical device according
to claim 21; wherein the SPhP waveguide is fabricated from a
plurality of polar-dielectric materials in a stacked structure.
23. The actively tunable polar-dielectric optical device according
to claim 21; wherein the SPhP waveguide is fabricated from a
plurality of polar-dielectric materials configured as a plurality
of discrete conformally overgrown layers.
24. The actively tunable polar-dielectric optical device according
to claim 21; wherein the SPhP waveguide is fabricated from a
plurality of polar-dielectric materials wherein the second
polar-dielectric material is embedded within a structure formed
from the first polar-dielectric material.
25. The actively tunable polar-dielectric optical device according
to claim 21; wherein the charge carrier source is a controllable
optical pump beam incident on the structure; and wherein the
injection of charge carriers into the at least one the
polar-dielectric materials is controlled by controlling an
intensity of the pump beam incident on that polar-dielectric
material.
26. The actively tunable polar-dielectric optical device according
to claim 21; wherein at least one of the polar-dielectric materials
is situated adjacent to one of a doped substrate, a metallic film,
and a van der Waals film, and wherein the charge carrier source is
a controllable electrical source operatively connected to the at
least one polar-dielectric material and to the one of the
substrate, the metallic film, and the van der Waals film, the
controllable electrical source being configured to controllably
inject charge carriers from the substrate, the metallic film, or
the van der Waals film into at the at least one polar-dielectric
material; wherein the injection of charge carriers into the at
least one polar-dielectric materials is controlled by controlling
an electrical signal from the electrical source.
27. The actively tunable polar-dielectric optical device according
to claim 21; wherein at least one of the polar-dielectric materials
is situated between a first substrate and a contact layer
comprising one of a second substrate, a metallic film or a van der
Waals film and wherein the charge carrier source is a controllable
electrical source operatively connected to the substrate and the
contact layer, the controllable electrical source being configured
to controllably inject charge carriers of one polarity (electron or
hole) from the substrate and of the opposite polarity from the
contact layer into at the at least one polar-dielectric material;
wherein the injection of charge carriers into the at least one
polar-dielectric materials is controlled by controlling an
electrical signal from the electrical source.
28. The actively tunable polar-dielectric optical device according
to claim 21, wherein at least one of the polar-dielectric materials
comprises SiC, GaN, BN, BC, AlN, Al.sub.2O.sub.3, SiO.sub.2, or
AlGaN.
29. The actively tunable polar-dielectric optical device according
to claim 21, wherein at least one of a corresponding extraordinary
and a corresponding ordinary permittivity of at least one of the
polar-dielectric materials is actively tuned by controlling the
number of charge carriers injected into the device.
30. The actively tunable polar-dielectric optical device according
to claim 21, wherein a birefringence of at least one of the
polar-dielectric materials is actively tuned by controlling the
number of charge carriers injected into the device.
Description
TECHNICAL FIELD
The present invention relates to the field of optical devices,
particularly devices that actively modulate the intensity or vary
the wavelength of light using free carrier injection into the
device.
BACKGROUND
The modulation of electromagnetic radiation is widely used, for
example, to propagate signals carried at the modulation frequency,
to improve signal-to-noise with phase-sensitive detection at the
modulation frequency, or to switch light on and off. Many
approaches well known in the art have been employed to effect the
modulation without use of moving mechanical parts. These include
electrical control of the radiation-source intensity itself, use of
electro-optic materials to adjust the polarization orientation
relative to the transmission axis of a polarizing filter, and use
of Bragg diffraction at acoustic frequencies. See K. Y. Lau, N.
Bar-Chaim, I. Ury, Ch. Harder, and A. Yariv, "Direct amplitude
modulation of short-cavity GaAs lasers up to X-band frequencies,"
Appl. Phys. Lett, 43 (1) (1983); and Louay Eldada, "Optical
communication components," Review Of Scientific Instruments, Vol.
75, No. 3, pp. 575-593 (2004). Modulating optical power by
dynamically changing the reflectance or absorbance of a material
has generally not been employed because of the difficulty of
producing significant amplitude or frequency modulation.
A modulator exposed to broad-band illumination (e.g., white light)
may also serve as a tunable source of radiation if it transmits or
reflects a narrow band of wavelengths around a tunable center
wavelength. This can be accomplished with commercial liquid-crystal
tunable filters, but such filters have limited operation speeds
(ms) and do not function in the mid- or far-IR spectral range.
Other specialized acousto-optic tunable filters may operate in the
IR, but require light to pass through bulky crystals and require
substantial driving power. See N. B. Singh, D. Kahler, D. J.
Knuteson, M. Gottlieb, D. Suhre, A. Berghmans, B. Wagner, J.
Hedrick, T. Karr, and J. J. Hawkins, "Operational characteristics
of a long-wavelength IR multispectral imager based on an
acousto-optic tunable filter," Opt. Engineering 2008, 47 (1),
013201.
When acting as a tunable source, a modulator can be used in
molecular sensing applications if its wavelength can be tuned to
optical absorptions characteristic of the analyte (i.e., the
chemical of interest), as in optical absorption spectroscopy and
infrared absorption spectroscopy (IRAS). Fieldable or remote
sensing IRAS spectrometers, of particular interest to the DoD, but
also of general commercial interest, are hampered by the paucity
and small tuning range of available sources as well as their size,
weight and power requirements.
Another sensor approach is based on surface-enhanced infrared
absorption (SEIRA), where the detection of vibrational
"fingerprints" of molecules adsorbed on the antenna is enhanced by
the strong local optical fields near a rough or nanostructured
surface, which could be a tunable nanoantenna. See R. Bukasov and
J. S. Shumaker-Parry, "Silver nanocrescents with infrared plasmonic
properties as tunable substrates for surface enhanced infrared
absorption spectroscopy," Anal. Chem. 2009, 81, 4531-4535; R. F.
Aroca, D. J. Ross, and C. Domingo, "Surface-enhanced infrared
spectroscopy," Appl. Spectrosc. 2004, 58, 324A-338A; and M. S.
Anderson, "Enhanced Infrared Absorption with Dielectric
Nanoparticles," Appl. Phys. Lett. 2003, 83 (14), 2964-2966.
Recently, miniaturization has been pursued for optical functions
through the use of highly confined optical modes, which have
potential to improve the performance and reduce the size and power
requirements of optical modulators and sensors. For example, in
sensing applications based on nanoantennas (e.g., SEIRA-based
sensors), extreme miniaturization of the antenna is desirable both
to increase the relative response of an individual antenna, and to
increase the surface area for enhanced response-per-unit-area of
the sensor platform.
Presently, highly confined optical modes are realized with
surface-plasmons in metal nanostructures and waveguides. However,
because plasmonic systems rely on free charge-carriers moving in
response to optical fields (e.g., optical conduction currents in a
metal), they suffer inherently from large scattering and absorption
losses in the charge-carrier ensemble.
An alternative lower-loss approach, central to our disclosure, uses
the vibrational motion of charge bound to the positive and negative
atomic or molecular ions comprising a polar-dielectric (e.g., SiC,
GaN, etc.) lattice. Charge bound to the positive and negative ions
comprising a polar-dielectric (e.g., SiC, GaN, etc.) lattice will
undergo a vibrational motion when stimulated by an outside force.
This vibrational motion of atoms in the lattice is known as a
"phonon," while the coherent oscillatory motion of the charge
carriers (i.e., of the free-electron or free-hole gas) is known as
a "plasmon." Each of these oscillatory motions has an associated
wavelength, where .lamda..sub.plasmon is the wavelength
corresponding to the characteristic plasmon frequency of a material
("plasmonic material") such as a metal or a doped semiconductor and
.lamda..sub.TO and .lamda..sub.LO are the wavelengths associated
with the transverse and longitudinal optical phonon vibrational
frequencies, respectively.
In certain material-dependent wavelength ranges near the so-called
"Reststrahlen" band, these polar-lattice vibrations in these
materials interact with light to produce surface phonon polaritons
(SPhPs), which cause the optical response of the material (referred
to herein as a "SPhP material") to be similar to that of a metal,
albeit without the presence of free carriers and the associated
electrical conductivity and optical losses (due to fast carrier
scattering rates). For both plasmonic and SPhP materials, the real
part .di-elect cons..sub.1(.lamda.) of the complex dielectric
function--the physical parameter governing the optical
response--assumes negative values for certain wavelengths .lamda.,
lending high reflectance to metals when
.lamda..gtoreq..lamda..sub.plasmon and to SPhP materials when
.lamda..sub.TO.gtoreq..lamda..gtoreq..lamda..sub.LO.
Negative values of .di-elect cons..sub.1(.lamda.) permit resonant
antennas to be constructed that are much smaller than their
resonant wavelength, through what is sometimes called a Frolich, or
dipole mode. Such plasmonic antennas are referred to as local
surface-plasmon resonators (LSPRs); here we refer to the surface
phonon-polariton analog as a local surface-phonon resonator, and
such an antenna is an "LSPhP" resonant antenna. This class of
antenna resonates at a wavelength .lamda..sub.res when .di-elect
cons..sub.1(.lamda..sub.res) assumes a specific value that depends
on the geometric shape of the antenna. A well-known geometry is the
sphere, which resonates when .di-elect
cons..sub.1(.lamda..sub.res)=-2.di-elect cons..sub.a, (1) where
.di-elect cons..sub.a is the dielectric constant of the ambient
material surrounding the sphere, with .di-elect cons..sub.a=1 for
an LSPhP resonator in air. Notably, principles of electromagnetism
do not impose any lower limit to the size of these antennas because
their resonant wavelength is set only by geometric shape. This is a
unique distinction with the more common half-wave antennas and
their kin, the size of which bears a fixed relationship to the
resonant wavelength.
However, plasmonic antennas made of metals exhibit high losses. As
a result, their resonant wavelengths have a broad spectral width
which makes them less effective for applications requiring a strong
response over a narrow wavelength band, such as thermal or quantum
emitters or wavelength filters. Another shortcoming of plasmonic
antennas made of metal is that their resonance wavelength cannot be
dynamically tuned because the conduction electron density of a
metal, which determines .di-elect cons..sub.1(.lamda.) and hence
the resonant frequency, is large and difficult to modify via
traditional means (e.g., by electrostatic gating or optical
pumping).
Although a plasmonic antenna made of metal can be tuned by altering
the dielectric function of the nearby environment through the
introduction of charge carriers, the benefits of large tuning
ranges and narrow resonances in the infrared are not likely to be
obtained. See Y. C Jun and I. Brener, "Electrically tunable
infrared metamaterials based on depletion-type semiconductor
devices" J. Opt. 2012, 14, 114013. Similarly, alterations in the
nearby dielectric environment can be induced through electro-optic
means, but again, tuning ranges will be severely limited. In
principle, plasmonic antennas could also be constructed of
semiconductors in which free carriers are introduced dynamically
through electrical injection or optical pumping, see U.S. Patent
Application Publication No. 2012/0074323 by J. Gomez rivas, V.
Giannini, A. Berrier, S. A. Maier, M. Matters-Kammerer, and L.
Tripodi, "THz frequency range antenna" (Mar. 29, 2012), but the
density required to produce a Frolich resonance in the wavelength
range of interest is prohibitively large and deleteriously lossy,
where the losses result in resonance bands that are broad compared
to the tuning range, which limits modulation depth.
SUMMARY
This summary is intended to introduce, in simplified form, a
selection of concepts that are further described in the Detailed
Description. This summary is not intended to identify key or
essential features of the claimed subject matter, nor is it
intended to be used as an aid in determining the scope of the
claimed subject matter. Instead, it is merely presented as a brief
overview of the subject matter described and claimed herein.
The present invention provides optical devices that include one or
more structures fabricated from polar-dielectric materials that
exhibit surface phonon polaritons (SPhPs). In accordance with the
present invention, an incoming optical beam to be modulated is
configured to include wavelengths within the Reststrahlen band of
the polar-dielectric material, where the Reststrahlen band
wavelengths cause the material to exhibit SPhPs which in turn
affect the optical properties of the material. These optical
properties are dependent on N, the concentration of charge carriers
in the material, so can be changed by altering the concentration of
charge carriers in the material. Thus, in accordance with the
present invention, the optical response of a polar-dielectric
material to an optical beam having wavelengths within the
material's Reststrahlen band can be selectively tuned by directly
injecting charge carriers into the material.
In some embodiments, the charge carrier concentration in the device
is optically pumped, wherein additional charge carriers are
injected into the material by means of an optical pump beam
directed at the material, while in other embodiments the
concentration in the device is electrically pumped, wherein the
charge carriers are injected into the material by means of a
voltage source coupled to the device. Thus, devices in accordance
with the present invention modulate the intensity or the wavelength
of infrared radiation (i.e., wavelengths between the visible and
microwave regions for which polar-dielectrics support Reststrahlen
bands) through the modulation of an applied optical or electrical
drive signal.
In some embodiments, a polar-dielectric device in accordance with
the present invention includes one or more SPhP resonant
nanoantennas. In such a device, the resonant wavelength
.lamda..sub.res of the antennas can be selectively tuned by
optically or electrically varying the concentration of charge
carriers in the nanoantennas.
In some embodiments, such an SPhP resonant nanoantenna device is
configured to act as a tunable filter, where a beam of broad-band
radiation is converted into a desired narrow-band beam. In other
embodiments, an SPhP resonant nanoantenna device in accordance with
the present invention can be configured to modulate the amplitude
and/or phase of light reflected and/or transmitted from the device
or to turn the reflected and/or transmitted light on and off at
very high speeds. In other embodiments, an SPhP resonant
nanoantenna device in accordance with the present invention can be
configured whereby a thermal emission spectrum from the SPhP
resonant nanoantennas is modified via the injection of charge
carriers into the polar-dielectric material.
In some embodiments, such an SPhP resonant nanoantenna device is
configured as a sensor where the reflected and/or transmitted beam
produced by an incoming probe beam can be selectively configured to
detect and identify one or more specific molecules through their
characteristic vibrational spectra.
In other embodiments, the SPhP polar-dielectric material in a
device in accordance with the present invention can be configured
as a waveguide, where the index of refraction n.sub.r of the device
can be selectively tuned by optically or electrically varying the
concentration of charge carriers in the polar-dielectric
material.
In some embodiments, an SPhP polar-dielectric waveguide device in
accordance with the present invention can be configured to steer an
incoming light beam and cause it to travel in a desired
direction.
In some embodiments, an SPhP polar-dielectric waveguide device in
accordance with the present invention can be configured to modulate
an incoming optical beam to produce an output beam having a desired
amplitude, wavelength, and/or phase or to turn the beam on and off
at very high speeds.
In some embodiments, an SPhP polar-dielectric waveguide can be
combined with one or more SPhP resonant nanoantennas to form, e.g.,
a molecular sensor.
In some embodiments, a device in accordance with the present
invention can be configured with multiple SPhP materials whereby a
multifrequency structure can be created, with layer selective
carrier injection possible based on the various band gaps of the
constituent materials.
In still other embodiments, a device in accordance with the present
invention can be configured whereby a metamaterial fabricated in
whole or in part from SPhP materials, could exhibit carrier-induced
modifications to its optical response.
In addition to the devices described herein, the present invention
also provides methods for modulating an incoming infrared beam onto
a device by selectively modifying the charge carrier density in
polar-dielectric features of the device to produce an output beam
having desired resonant wavelength, amplitude, phase or
polarization characteristics or for turning the output beam on and
off at a high rate of speed.
Thus, in accordance with the present invention, an incoming beam
incident on a polar-dielectric structure can be actively modulated
by directly injecting charge carriers N into the polar-dielectric
material through either an optical pump beam or a voltage source.
Such changes in carrier density alter the resonant wavelength
.lamda..sub.res of polar-dielectric local SPhP (LSPhP) resonant
antennas and/or the refractive index n.sub.r(N, .lamda.) of a
polar-dielectric SPhP waveguide, or an epsilon-near-zero (ENZ)
waveguide in the device.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a block diagram illustrating general aspects of an
actively tunable polar-dielectric optical device in accordance with
the present invention.
FIG. 2 is a block diagram illustrating aspects of an optically
stimulated polar-dielectric optical device in accordance with the
present invention.
FIGS. 3A-3C are plots that illustrate the means for tuning the
resonant wavelength of an SPhP resonant antenna, and the response
of an SPhP resonant antenna, using SiC as an exemplary
material.
FIGS. 4A-4E are block diagrams illustrating aspects of an exemplary
sensor comprising a polar-dielectric optical device in accordance
with the present invention.
FIG. 5 is a block diagram illustrating aspects of an exemplary
electrically stimulated SPhP optical device in accordance with the
present invention.
FIG. 6 is a block diagram illustrating aspects of another exemplary
electrically stimulated SPhP optical device in accordance with the
present invention.
FIG. 7 is a block diagram illustrating aspects of another exemplary
electrically stimulated SPhP optical device in accordance with the
present invention.
FIG. 8 is a block diagram illustrating aspects of another exemplary
electrically stimulated SPhP optical device in accordance with the
present invention.
FIG. 9 is a block diagram illustrating general aspects of an
exemplary optically stimulated SPhP waveguide in accordance with
the present invention.
FIG. 10 is a block diagram illustrating general aspects of an
exemplary electrically stimulated SPhP waveguide in accordance with
the present invention.
FIG. 11 is a block diagram illustrating aspects of an exemplary
Mach-Zehnder optical switch comprising an optically stimulated SPhP
waveguide in accordance with the present invention.
FIG. 12 is a block diagram illustrating aspects of an exemplary
electrically stimulated SPhP waveguide in accordance with the
present invention.
FIG. 13 is a block diagram illustrating aspects of another
exemplary optically stimulated SPhP waveguide in accordance with
the present invention.
FIG. 14 is a block diagram illustrating aspects of another
exemplary electrically stimulated SPhP waveguide in accordance with
the present invention.
FIG. 15 is a block diagram illustrating aspects of an exemplary
beam steerer configured for sensing that comprises an optically
stimulated SPhP waveguide in accordance with the present
invention.
FIG. 16 is a block diagram illustrating aspects of an exemplary
beam steerer configured for sensing that comprises an electrically
stimulated SPhP waveguide in accordance with the present
invention.
FIG. 17 is a block diagram illustrating aspects an exemplary sensor
comprising an optically stimulated SPhP waveguide and SPhP antennas
in accordance with the present invention.
FIG. 18 is a block diagram illustrating aspects an exemplary sensor
comprising an electrically stimulated SPhP waveguide and SPhP
antennas in accordance with the present invention.
FIG. 19 is a block diagram illustrating aspects of an exemplary
optically stimulated SPhP waveguide in accordance with one or more
aspects of the present invention.
FIG. 20 is a block diagram illustrating aspects of an exemplary
electrically stimulated SPhP waveguide in accordance with one or
more aspects of the present invention.
FIGS. 21A-21C are block diagrams illustrating exemplary embodiments
of SPhP antennas formed from multiple SPhP materials in accordance
with one or more aspects of the present invention.
FIGS. 22A-22C are block diagrams illustrating exemplary embodiments
of SPhP waveguides formed from multiple SPhP materials in
accordance with one or more aspects of the present invention.
FIGS. 23A-23C are block diagrams illustrating exemplary carrier
injection mechanisms in structures formed from multiple SPhP
materials in accordance with one or more aspects of the present
invention.
FIGS. 24A-24D are block diagrams illustrating exemplary
methodologies for controlling the resonant frequency of an SPhP
nanoantenna formed from multiple SPhP materials in accordance with
one or more aspects of the present invention.
FIGS. 25A-25C are block diagrams illustrating possible behaviors of
interface polaritons (.lamda..sub.SPhP) between layers in a
waveguide formed from multiple SPhP materials in accordance with
one or more aspects of the present invention.
DETAILED DESCRIPTION
The aspects and features of the present invention summarized above
can be embodied in various forms. The following description shows,
by way of illustration, combinations and configurations in which
the aspects and features can be put into practice. It is understood
that the described aspects, features, and/or embodiments are merely
examples, and that one skilled in the art may utilize other
aspects, features, and/or embodiments or make structural and
functional modifications without departing from the scope of the
present disclosure.
The invention provides devices that actively tune the reflection,
transmission, or absorption of light directed at functional
structures fabricated from polar-dielectrics that support surface
phonon polaritons (SPhPs), where "tuning" as used herein includes
the selective modification of one or more characteristics of the
light, such as its wavelength, phase, or amplitude.
In accordance with the present invention, the optical properties
lent to specific structures by the SPhPs are altered by introducing
charge carriers directly into the structures. The carriers can be
introduced into these structures, and the carrier concentration
thereby controlled, either through electrical bias or optical
pumping. These devices leverage the unique sensitivity of the
optical properties of polar-dielectrics to modest charge-carrier
densities when the optical wavelength is near the so-called
Reststrahlen band of the material, where the optical properties are
dominated by the SPhPs. The structures of interest include but are
not limited to optical nanoantennas that resonate in the infrared
and waveguides for infrared light, where the term "infrared" as
used herein would be understood by those skilled in the art to
include wavelengths in the mid-infrared, far-infrared, and THz
range, that is, wavelengths between the visible and microwave
regions for which polar-dielectrics support Reststrahlen bands.
Devices in accordance with the present invention employ a new
method to effect intensity and wavelength modulation by combining
two phenomena specific to wavelengths near the "Reststrahlen band"
of the polar-dielectric-materials employed. The first is the
metallic-like optical behavior in this wavelength range, which
allows the construction of nano- and micro-scale optical resonators
far smaller than the wavelength, and with a resonant frequency that
can be coarsely tuned with shape. See e.g., J. D. Caldwell, O. J.
Glembocki, Y. Francescato, N. Sharac, V. Giannini, F. J. Bezares,
J. P. Long, J. C. Owrutsky, I. Vurgaftman, J. G. Tischler, V. D.
Wheeler, N. D. Bassim, L. M. Shirey, R. Kasica, and S. A. Maier,
"Low-loss, extreme sub-diffraction photon confinement via silicon
carbide localized surface phonon polariton resonators," Nano Lett.
2013, 13, 3690-3697. The second is the especially strong optical
response of the dielectric in this wavelength range to the presence
of charge carriers within it, which enables the ability to finely
tune the optical response of the SPhP material over a broad range
with the internal charge-carrier density.
The underlying optical properties of SPhPs, namely low loss, strong
dispersion of the dielectric function, and sensitivity to carrier
concentration, provide the invention with advantages of
unprecedented tuning range and high quality-factors at wavelengths
between the mid-infrared and single-digit THz compared to methods
or devices based on carrier-induced perturbations to the
environment of metallic plasmonic antennas or to the carrier
plasmon frequency in semiconductors. These optical properties are
altered by introducing charge carriers directly into the
structures. The carriers can be introduced into these structures,
and the carrier concentration thereby controlled, through optical
pumping or the application of an appropriate electrical bias.
Thus, in accordance with the present invention, these principles
are utilized to provide infrared optical modulators. The incoming
beam to be modulated will be of a wavelength confined within the
Reststrahlen band of the polar-dielectric material. Upon being
illuminated by the beam, the polar-dielectric structure will
exhibit localized SPhP resonances commensurate with the size and
shape of structure. The observation of this resonance occurs when
the real permittivity of the material is equal in magnitude, but
opposite in sign to a geometrical constant that is defined by the
shape of the particle (e.g. the geometrical constant is 2 for
spherical particles). By injecting additional carriers (i.e.
electrons or holes) into the polar-dielectric material, values of
the real permittivity within the Reststrahlen band become more
negative, which shifts the resonance condition to higher energy,
and also alters the index of refraction, and so in accordance with
the present invention, the resonant wavelength .lamda..sub.res
and/or the index of refraction n.sub.r of the material can be
selectively tuned by directly injecting charge carriers into the
material by means of an optical pump beam or an electrical voltage
source.
Thus, the present invention provides optical modulators whose
optical response can be quickly and easily tuned by varying the
charge carrier density in the polar-dielectric materials in the
device. By taking advantage of the ability to do so, various
devices can be designed wherein input infrared light can be
modulated to provide output having a desired wavelength, intensity,
and/or phase; desired thermal emission spectral response; desired
response to analyte molecules; or desired beam direction, or which
can be turned on and off at very high speeds.
Various embodiments of such optical devices employing one or more
aspects of the present invention will now be described with respect
to the accompanying FIGURES which form a part of the present
disclosure. It will be understood by one skilled in the art that
the FIGURES are merely block diagrams illustrating the main
elements of the exemplary devices depicted therein, and that
additional elements may be included in actual devices fabricated in
accordance with the present invention. It will also be understood
that the devices illustrated in the FIGURES are merely exemplary,
and that other devices within the scope of the present invention
may be developed using the inventive principles described
herein.
It will be noted that corresponding elements of the embodiments
illustrated therein have corresponding numbering in the various
FIGURES. For example, local surface-phonon-polariton (LSPhP)
resonant antennas are numbered as 101 in FIG. 1 and as 301 in FIG.
3, while the source of additional charge carriers is shown as pump
beam 103/303 in FIGS. 1 and 3, respectively, and as voltage source
503/603, respectively, in FIGS. 5 and 6. In addition, in some
cases, reference numbers for one or more features illustrated in a
given FIGURE might be omitted for the sake of brevity and compact
description where that feature is not germane to the embodiment
being illustrated and described therein.
In addition to the devices described herein, the present invention
also provides methods for modulating an incoming infrared
(.about.50-3500 cm.sup.-1) beam incident onto a device through
tuning of the charge-carrier density in polar-dielectric features
of the device to produce an output beam having desired
characteristics or for turning the output beam on and off at a high
rate of speed. Thus, in accordance with the present invention, a
characteristic of an incoming beam incident on a polar-dielectric
structure can be modulated by pumping the charge carrier density
through either an optical pump beam or a voltage source. Such
changes in carrier density alter the resonant wavelength
.lamda..sub.res of polar-dielectric LSPhP resonant antennas and/or
the refractive index n.sub.r(N, .lamda.) of a polar-dielectric SPhP
or ENZ-based waveguide in the device. As the incoming beam
interacts with the polar-dielectric materials in the device, these
changes in resonant wavelength and/or refractive index affect the
way the beam is reflected and/or transmitted through the device. By
altering the added charge carrier density, either by altering the
intensity of the optical pump beam or by altering the applied
voltage, an output beam having a desired wavelength, amplitude, or
phase can be produced or can be turned on or off at a desired
speed.
A brief description of the physical processes utilized in the
present invention will now be provided with respect to FIGS. 1 and
2.
FIG. 1 is a block diagram providing an overview of the general
structure of an actively tunable polar-dielectric optical device in
accordance with the present invention, while
FIG. 2 is a block diagram illustrating an exemplary optically
pumped embodiment of such a device.
As shown in FIG. 1, an optical device in accordance with the
present invention comprises one or more polar-dielectric structures
such as LSPhP resonant antennas 101 arranged on a substrate 102.
The structures 101 are configured so as to exploit the metallic
nature imparted to polar-dielectrics by surface phonon polaritons
(SPhPs) as described above. These structures can be made from any
suitable material, e.g., SiC or GaN, in any suitable physical form,
for example, nano- or micro-pillars, disks, bars, wires, bowties or
ellipsoids, etc. In accordance with the present invention, as
described in more detail below, additional charge carriers 104 can
be controllably introduced into the dielectric structures, e.g.,
optically by a pump beam 103a in some embodiments or electrically
by an electrical current from voltage source 103b in others.
As described in more detail below, by controllably changing the
concentration of charge carriers 104 in the polar-dielectric
structures 101, the index of refraction n.sub.r and/or the resonant
wavelength .lamda..sub.res of the structures can be controllably
tuned so that incoming infrared light 105 can be modulated to
provide an output beam having a desired wavelength, a desired
amplitude, and/or a desired phase.
The overall principles of operation of an actively tunable
polar-dielectric optical device in accordance with the present
invention will now be described in the context of an optically
pumped device such as that illustrated in FIG. 2. These principles
of operation can be understood by first considering an isolated
polar-dielectric structure, e.g., an isolated single nanopillar of
the nanopillar antennas 201 shown in FIG. 2. Prior to the
introduction of carriers thereinto, the antenna resonates at a
wavelength .lamda. given by solving the following equation for
.lamda.: .di-elect cons..sub.1(.lamda.)=g.di-elect cons..sub.a, (2)
where .di-elect cons..sub.a is an effective dielectric function of
the surrounding medium (e.g., .di-elect cons..sub.a.apprxeq.1 for
air). The coefficient g is determined by the shape of the
polar-dielectric structure and the polarization of the incident
light-beam 205 to be modulated, relative to the shape of the
nanoantenna (e.g., g=-2 for an isolated sphere, but is more
negative for an elongated shape when the polarization is along the
long axis).
To effect modulation of incoming infrared light, in the optically
pumped embodiment illustrated in FIG. 2, the array is illuminated
with a pump light beam 203. For illustration, we again consider an
isolated antenna of the array of nanoantennas 201. If the photon
energy of the pump light beam exceeds the bandgap of the
dielectric, free charge-carriers 204 in the form of electron-hole
pairs are generated in the nanoantennas, with the number and
density of these free charge-carriers varying with the intensity of
the pump beam. These optically pumped carriers require adding a
"Drude-like" term, .di-elect cons..sub.1,Drude(N, .lamda.), to the
dielectric function .di-elect cons..sub.1(.lamda.) of the
polar-dielectric, where N is the total density of charge-carriers.
In general, the background density of charge carriers in the
polar-dielectric can be made negligible, so that N generally
represents the optically pumped carrier density. The resonant
frequency now changes, as dictated by the new solution for the
resonant wavelength .lamda..sub.res in the altered overall
dielectric function: .di-elect
cons..sub.1,tot(.lamda..sub.res)=.di-elect
cons..sub.1(.lamda..sub.res)+.di-elect
cons..sub.1,Drude(N,.lamda..sub.res)=g.di-elect cons..sub.a.
(3)
In this way, the resonant wavelength .lamda..sub.res of the
polar-dielectric antennas can be finely tuned by controlling the
intensity of incident pump beam 203, which in turn controls the
pump carrier density N in the polar-dielectric material. In
addition, because both the reflected and transmitted light
206a/206b from incident light beam 205 are sensitive to the
dielectric function of the material, controlling the intensity of
the pump beam and thereby altering the charge carrier density, an
incident light beam can be modulated so that the reflected beam
206a and the transmitted beam 206b have desired characteristics
such as modulated intensity or altered wavelength components
requisite to a tuned-wavelength filter or tuned-wavelength source.
In other embodiments, other structures could be used, such as
metamaterial structures having a negative index of refraction or
birefringent or hyperbolic media (i.e. where the orthogonal optical
axes exhibit positive and negative permittivities simultaneously,
such as in hexagonal boron nitride), whereby the carrier injection
would modulate the corresponding index of refraction, birefringence
or individual ordinary and/or extraordinary permittivities to
modify the degree of hyperbolicity as well.
FIGS. 3A-3C are plots illustrating some exemplary results of the
principles described above.
FIG. 3A summarizes computations that demonstrate how the optical
permittivity varies with the density of charge carriers within the
material and illustrates the computed real-part of the dielectric
function, .di-elect cons..sub.1,tot(.lamda.), of SiC, including the
contribution of various carrier densities. The variation in
.di-elect cons..sub.1,tot(.lamda.) as the carrier concentration N
is changed is evident. The resonant condition for an isolated
spherical antenna is also indicated. FIG. 3B displays the
lineshapes for the corresponding resonant bands and shows how the
computed resonant wavelength of a spherically shaped LSPhP resonant
antenna shifts with varying charge-carrier density within the
antenna. FIG. 3C is a plot showing the results of an experimental
example of the Reststrahlen band for bare 6H--SiC substrate (shown
by the solid curve) and of an array of SiC nanopillar antennas
having a diameter of about 250 nm and a height of about 800 nm
(dotted curve), and shows that the light beam reflected from the
nanopillar array exhibits a dip at the antenna resonant frequency,
.lamda..sub.res.
Modulation can be understood by referring to FIG. 2 and FIGS. 3B
and 3C. If substrate 202 is not highly reflecting, the reflected
light-beam 206a will exhibit a spectrum with a resonant peak very
similar to that shown in FIG. 3B for a particular carrier
concentration N, while if incident beam 205 is broad band, the
array in reflection assumes the function of narrow-band source that
is tunable by altering N. Note the extremely broad tuning range (up
to 20%) compared to other sources in this wavelength range, such as
lead-salt and quantum-cascade lasers, which are currently on the
order of 0.4% for distributed feedback quantum-cascade lasers
(DFB-QCLs) and up to 10% for bulky external-cavity QCLs (EC-QCLs).
See, e.g., the tunable IR Quantum Cascade Laser Sources produced by
Boston Electronics Corporation, described at
http://www.boselec.com/products/irtun.html.
If substrate 202 is transparent, the transmitted light-beam 206b
will exhibit a dip in transmission at the local surface-phonon
(LSPh) resonance wavelength .lamda..sub.res, which shifts with the
carrier density N of the nanoantennas in the same manner as does
the reflected light-beam.
If, on the other hand, instead of being transparent, substrate 202
is highly reflective or is made of the same material as the
nanoantennas 201, as in FIG. 3C, the behavior of the reflected and
the transmitted light-beams is reversed. In such a case, the
substrate would be highly reflecting in the Reststrahlen spectral
band, with a dip in reflectance at the LSPh resonance at the tuned
.lamda..sub.res as illustrated in FIG. 3C. If the substrate is
sufficiently thin, the light beam 206b that is transmitted through
the substrate will exhibit a tunable peak at .lamda..sub.res, with
the peak being tunable through the tuning of .lamda..sub.res in
accordance with the present invention as described herein.
An optically pumped tunable polar-dielectric optical device in
accordance with the present invention can be configured for
numerous applications, and some of those applications will now be
described. For example, devices in accordance with the present
invention can execute many typical modulating functions, including
optical switching and amplitude modulation, and can serve as an
agilely tunable frequency filter or source in the infrared
wavelength range. It should be noted that the applications
described are merely exemplary, and other applications may also be
developed within the scope and spirit of the present invention.
When employed as a source of a beam input into a photodetector or
other receiver, an actively tunable polar-dielectric optical
modulator in accordance with the present invention can be used as
part of a molecular sensor because the Reststrahlen band often
occurs in the infrared where vibrational fingerprinting of
molecular species is possible.
FIGS. 4A-4E illustrate various aspects of an exemplary embodiment
of an optically controlled actively tunable polar-dielectric
optical modulator used as a sensor in accordance with the present
invention. In such a sensor, detection of an analyte object such as
adsorbed or proximate particulates or gas or liquid molecules
407a/407b can be achieved through measurement of the reflection 406
from incoming light 405 in the infrared or other spectral range,
though, of course, in other embodiments detection can be achieved
through measurement of light transmitted through the sensor. A
novel aspect of this approach is the use of the reflective array as
the sensing platform itself, which exploits the strong optical
fields around the nanoantennas to also enhance the response through
the surface-enhanced infrared absorption (SEIRA) effect. See
Bukasov, supra; Aroca, supra; and Anderson, supra. Other analyte
objects that can be detected using a sensor device in accordance
with the present invention include but are not limited to proteins,
polymers, or coatings.
As shown in FIG. 4A, a molecular sensor in accordance with the
present invention can include a tunable polar-dielectric modulator
comprising an array of polar-dielectric antenna elements, e.g.,
nanopillars 401, arranged on a substrate 402, where the charge
carrier density in the antennas is optically pumped by means of
pump beam 403 illuminating the antenna array. In the exemplary case
illustrated in FIG. 4, the intensity of the pump beam 403 is
increased over time, to inject an increasing density of charge
carriers into the nanoantennas, with five different values of pump
intensity being applied at five different times, though in other
embodiments the pump intensity can be swept continuously. At the
same time, a probe beam 405 interrogates the antenna array, with
the probe beam having a spectrum as shown schematically in FIG.
4C.
As shown in the FIGURE, an incoming probe beam 405 is directed at
the sensor. When the sensor is illuminated by the probe beam 405,
the probe beam reflects as beam 406 with a modified spectrum as
illustrated by one of the peaks in FIG. 4D, with the particular
peak being determined by the resonant wavelength of the
nanoantennas 401, which in turn is determined by the particular
charge-carrier density within a nanoantenna that corresponds to the
intensity of pump beam 403. Molecules 407a adsorbed directly on the
nanoantennas will exhibit surface-enhanced IR absorption (SEIRA) of
the probe beam 405, producing less reflected light 406 at the
absorption wavelength, while detection of remote molecules 407b not
adsorbed on the sensor surface is achieved through ordinary
infrared absorption spectroscopy of the reflected light 406.
In either case, the light is then received at photodetector 408
with an intensity reduced at the particular absorption wavelength
characteristic of the molecule. This wavelength is sensed by
varying the intensity of pump beam 403, and thus the resonant
wavelength of the nanoantennas 401, which tunes the wavelength
being reflected in beam 406. When this wavelength matches the
absorption wavelength of molecule 407a or 407b, less intensity is
received by the detector 408, as illustrated by the reduced
amplitude in FIG. 4D of the peak at the absorption wavelength. The
vibrational absorption associated with the molecules is then
detected as a reduced intensity of the reflected light-beam 406, as
shown by the dashed curve in FIG. 4D.
In addition, it is possible to improve the background
discrimination and sensitivity against 1/f noise by exploiting the
invention's modulation capability to enable phase-sensitive
detection. In this situation, the intensity of the pump light (or
drive current in the electrically driven variant below) is weakly
modulated periodically at a frequency f, and the detector includes
a lock-in amplifier. The antennas' resonant wavelength will acquire
a small periodic modulation on top of the wavelength ramp, as
depicted by the vertically running sine wave shown in FIG. 4E. The
presence of analyte molecules will create a corresponding periodic
variation in the detected photocurrent, as indicated by the
horizontal sine wave in FIG. 4E. Similar results can also be
achieved with rapid scanning (>1 kHz scan rate) without the
signal reduction due to demodulation.
Improved selectivity in the scheme of FIGS. 4A-4E, as well as other
schemes, could be achieved, for example, by depositing on the
antennas a specialized thin coating (e.g., a polymer) designed to
selectively adsorb analyte molecules of interest and to concentrate
the molecules on or near the antennas. Polymer films are routinely
made thin enough to transmit sufficient infrared radiation to
maintain the sensing function.
These devices can also serve in a sensing approach analogous to
plasmonic LSPR sensing. In such devices, the adsorption of
molecules alters the dielectric environment of the antennas and
thus shifts their resonant frequency. The shift in frequency can be
detected by spectroscopically interrogating the array. However, in
accordance with the present invention, the antenna's resonant
wavelength can be tuned to occur at an inflection point of the
analyte IR vibrational spectrum, so that the presence of an analyte
would be announced as a change in reflected or transmitted
intensity, without use of an external monochrometer or spectrometer
to spectroscopically interrogate the array.
Similar sensing configurations are also possible with electrical
bias control of carrier density as described below.
In many cases, electrical modulation may be highly desirable for
reasons of size, weight, efficiency, and ease of use of the device.
FIGS. 5-8 are block diagrams depicting aspects of some exemplary
embodiments of an electrically controlled modulator in accordance
with the present invention. Like the optically controlled devices
described above, these electrically controlled modulators alter the
resonant wavelength .lamda..sub.res of a nanoantenna through the
introduction of mobile carriers into the antenna.
FIG. 5 illustrates a first exemplary embodiment of an electrically
controlled actively tunable polar-dielectric optical modulator in
accordance with the present invention. As shown in FIG. 5, such a
device includes a collection of local surface-phonon-polariton
(LSPhP) resonant nanoantennas 501 situated in an insulator 509 on a
substrate 502. The antennas 501 are positioned in the insulator so
that they are within tunneling distance of transparent electrode
510 connected to voltage source 503 Electrode 510 should be
configured to be sufficiently transparent so as to permit probe
beam 505 to reach antennas 501 and to permit beam 506a reflected
from the antennas to escape the device, while, if desired,
substrate 502 also should be sufficiently transparent to permit
beam 506b to be transmitted through the device.
Analogous to the optically pumped embodiments described above,
electrons controlled by voltage source 503 are introduced into the
array of nanoantennas 501 via tunneling current from electrode 510,
where the tunneling current injects charge into the nanoantennas,
thereby tuning the center wavelength of the narrow reflected band
at the resonant wavelength .lamda..sub.res of the nanoantenna. As
with the optically pumped devices described above, an infrared
light beam 505 incident on nanoantennas 501 is modulated by the
device to produce reflected beam 506a and/or transmitted beam 506b.
By altering the carrier density N in the nanoantennas, incident
beam 505 is modulated to produce reflected and/or transmitted beams
having a desired resonant wavelength or amplitude, depending on the
characteristics of the incident beam 505.
The electrically driven approach illustrated in FIG. 5 can be used
in a vibrational sensing application whereby molecules 507a
adsorbed on the top electrode 510 can be detected by reflected beam
506a and/or molecule 507b, adsorbed on the substrate, can be
detected by transmitted beam 506b. In addition, if the tunneling
electrode 510 is sufficiently thin (as would be the case if it were
made from graphene), SEIRA detection could be possible.
FIG. 6 depicts another exemplary embodiment of an electrically
controlled actively tunable polar-dielectric optical modulator in
accordance with the present invention. In this embodiment, as shown
in FIG. 6, an array of LSPhP resonant antennas 601 is fabricated on
a substrate 602, where substrate 602 in this embodiment being a
highly doped semiconductor such as the polar-dielectric itself, or
Si, or other suitable semiconductor. Fabrication of the antennas
can be accomplished via any suitable method, such as epitaxial
growth of SiC on a highly doped Si substrate or growth of
III-nitride materials such as GaN, AlN, or AlGaN on an Si or SiC
substrate, followed by standard lithographic patterning and etching
processes or via the direct epitaxial growth of nanostructures such
as nanowires. Once the array of antennas 601 is fabricated, a thin
insulating barrier layer 609 is deposited on an upper surface of
the antennas and a transparent conducting layer 610 is placed on
top of the array. Conducting layer 610 can be a thin chemical vapor
deposition (CVD)-grown or transferred graphene layer, a thin
conducting oxide, an optically thin metal, an ITO layer, or a thin
(<10 nm) atomic layer deposition (ALD) metal film, but is not
limited to those materials and can be made from any suitable
material having a transparency sufficient to permit penetration by
probe light beam 605 and reflected beam 606.
Voltage source 603 is connected to conducting layer 610 and
substrate 602. When a voltage V is applied, carriers are drawn into
the antennas 601 from substrate 602. The polarity of voltage V is
determined by the substrate doping, and to most efficiently inject
carriers from the substrate to the antennas, the applied voltage
should be configured to have a bias appropriate to draw the
majority carrier type from the substrate into the nominally undoped
SPhP nanostructures.
Thus, in accordance with the present invention, by varying the
voltage from voltage source 603, the charge-carrier density of the
antennas, and thus the antenna resonance wavelength
.lamda..sub.res, can be quickly and easily tuned. As a result of
this tuning, incident beam 605 is reflected from the antennas, with
its spectral characteristics determined by the antenna resonance.
In addition, as with the optically pumped embodiment described
above with respect to FIG. 4, adsorbed molecule 607a and/or free
molecule 607b can be sensed by means of their modification through
vibrational absorption of the incident beam and/or the reflected
beam 606.
FIG. 7 illustrates another exemplary embodiment of an electrically
controlled actively tunable polar-dielectric optical modulator in
accordance with the present invention. The embodiment depicted in
FIG. 7 is similar to that shown in FIG. 6, except that in the
embodiment illustrated in FIG. 7, insulating barrier layer 709 and
conducting layer 710 are grown conformally over the nanoantennas
701 and substrate 702. Growth of barrier layer 709 can be
accomplished by any suitable means, such as ALD of ZnO,
Al.sub.2O.sub.3, or SiO.sub.2, or through the CVD growth of
nanocrystalline diamond films. As with the embodiment described
above with respect to FIG. 6, conducting layer 710 can be formed
from any suitable material such as graphene, a thin conducting
oxide, or an optically thin metal and can be conformally formed
over barrier layer 709 by any suitable method such as CVD, ALD, or
transfer.
The device operates in the same manner as does the device
illustrated in FIG. 6, with voltage source 703 providing an
appropriately biased voltage which causes charge carriers from
doped substrate 702 to move to the undoped SPhP antennas 701,
thereby changing their resonant wavelength .lamda..sub.res. When
the modulator is configured for use as a sensor, analyte molecule
707a adsorbed on the surface and/or free analyte molecule 707b can
be detected and analyzed through their interaction with the
reflected beam 706 from probe beam 705. As with the prior
embodiments, in accordance with the present invention, by tuning
the charge carrier density in the nanoantennas, the resonant
wavelength .lamda..sub.res of the antenna array--and thus the
characteristics of the reflected beam--can be tuned to provide a
desired response to an analyte molecule of interest.
It will be noted that in the embodiments of both FIG. 6 and FIG. 7,
in some cases, the Schottky barrier occurring in the
polar-dielectric at its junction with the conducting electrode can
serve as a barrier to charge-carrier transport, in which case an
insulating barrier layer is not needed.
FIG. 8 illustrates another exemplary embodiment of an electrically
controlled actively tunable polar-dielectric optical modulator in
accordance with the present invention. In the embodiment
illustrated in FIG. 8, electrical control of the modulator is
effected by electrochemical bias. Thus, as shown in FIG. 8, the
device includes an array of SPhP nanoantennas 801 on a substrate
802, where the nanoantennas are situated in an electrolyte solution
809. One electrode from voltage source 803 contacts the electrolyte
solution, while the other electrode contacts the substrate. When an
appropriately biased voltage from voltage source 803 is applied,
charge carriers are drawn from electrolyte solution 809 into the
antennas 801. As in the other embodiments in accordance with the
present invention, the added charge carriers affect the resonant
wavelength--and thus the optical response--of the antennas, which
then affect the characteristics of beam 806 reflected from incident
beam 805.
The modulation functions described thus far rely on optical
antennas in which the electromagnetic resonance is locally
confined. The same sensitivity of the optical properties of
phonon-polaritonic materials to introduced charge carriers can also
be exploited to perform useful functions in waveguides made of
polar-dielectrics that support propagating phonon-polaritonic
modes. These modes are confined to a surface, but are not
localized, in the sense that they propagate as a wave along the
surface, i.e., on the interface between the polar-dielectric and
the overlying dielectric material. Analogous waves on plasmonic
metal surfaces are well known, see, e.g., A. V. Zayats, I. I.
Smolyaminov, and A. A. Maradudin, "Nano-optics of surface plasmon
polaritons," Physics Reports, 2005, 81, 131-314, but these cannot
be controlled by injecting carriers because of the large background
density of carriers in a metal. Instead, to effect control, the
dielectric environment around the metal waveguide must be altered.
See U.S. Patent Application Publication No. 2012/0057215 by H. Suh,
C. W. Lee, Y. Park, and J. Kim, "Surface plasmon polariton
modulator" (Mar. 8, 2012).
In other embodiments, the present invention provides actively
tunable polar-dielectric waveguides in which the phase of an SPhP
beam propagating along the surface of a polar-dielectric material
can be modulated through the use of charge carriers injected
directly into the material. When dealing with the phase of
travelling waves, the principle of operation is best described
using the refractive index n.sub.r(N,.lamda.), which is related to
the dielectric function .di-elect cons..sub.1(N, .lamda.) described
above, where again N is the concentration of charge carriers.
Through the established properties of wave propagation, we know
that if the optical phase .phi. of an incoming SPhP beam is taken
as zero at some location, then in the absence of optical pumping,
the phase of the output SPhP beam at a different location removed
by a distance L is .phi.=2.pi.Ln.sub.r(0,.lamda.)/.lamda., where L
is the distance between the two locations of the input and output
beams. When charge carriers of concentration N are introduced into
the waveguide, either by an optical pump beam or by a voltage
source as described above, the refractive index n.sub.r(N,.lamda.)
of the material is altered, and the phase of the output SPhP-beam
assumes a new value .phi.=2.pi.Ln.sub.r(N,.lamda.)/.lamda..
FIGS. 9 and 10, respectively, depict exemplary embodiments of an
optically and an electrically pumped actively tunable
polar-dielectric phase modulator in accordance with the present
invention. As shown in FIGS. 9 and 10, in both cases, a SPhP
waveguide 911/1011 rests on a substrate 902/1002, though in some
embodiments, the waveguide may be free-standing.
In the embodiment illustrated in FIG. 9, an incoming SPhP beam 912,
which is confined to the surface of the waveguide, is excited on
the waveguide through an end-fire, grating, or prism arrangement
(not shown). In accordance with the present invention, the phase of
the output SPhP beam 913 is modulated by changes in the refractive
index of the waveguide induced by charge carriers pumped into the
waveguide by the optical pump-light beam 903 in a manner described
above.
In the embodiment illustrated in FIG. 10, charge carriers from
doped substrate 1002 are drawn into the SPhP waveguide 1011 by a
voltage from voltage source 1003 applied to gate electrode 1010,
which is situated on an upper surface of waveguide 1011, which may
be separated from the waveguide by optional barrier layer 1009,
depending on the electrical characteristics of the materials
constituting substrate 1002, waveguide 1011, and gate electrode
1010. In accordance with the present invention and as described
above, an SPhP beam is input into the waveguide, and by controlling
the voltage and thus the charge-carrier density in the waveguide,
the phase of the output SPhP beam 1013 can be controlled.
In some embodiments, SPhP waveguides in accordance with the present
invention can be configured to produce switching and/or amplitude
modulation through the phenomenon of interferometric phase
modulation. In the exemplary embodiments illustrated in FIGS. 11
and 12, such switching and/or amplitude modulation can be effected
using a waveguide in accordance with the present invention which is
configured to act as a Mach-Zehnder interferometer.
FIG. 11 is a block diagram illustrating aspects of an optically
pumped Mach-Zehnder interferometer in accordance with the present
invention. As shown in FIG. 11, an input SPhP beam 1112 travelling
along an SPhP waveguide 1111 is split between two arms 1111a and
1111b. Charge carriers are pumped into arm 1111a by pump light beam
1103, which cause a phase shift in the SPhP beam travelling along
arm 1111a relative to the SPhP beam travelling along arm 1111b. The
resulting phase shift in the pumped arm produces an interference
between the beam that exits arm 1111a and the beam that exits arm
1111b which causes a change in the amplitude of the SPhP beam 1113
that is formed when the two beams on each arm recombine. By
alternating the intensity of pump beam 1103 between two suitable
values, beam 1111a can be made to either constructively or
destructively interfere with beam 1111b, causing the amplitude of
output beam 1113 to alternate between a maximum and minimum value,
thereby implementing an optical switch that turns the output beam
on and off.
FIG. 12 is an electrically pumped version of the Mach-Zehnder
modulator shown in FIG. 11. In the electrically pumped embodiment
illustrated in FIG. 12, polar-dielectric waveguide 1211 is situated
between highly doped substrate 1202 on a bottom surface thereof and
gate electrode 1210 on a top surface thereof, with the gate
electrode being separated from waveguide 1211 in some embodiments
by optional barrier layer 1209. Charge carriers from substrate 1202
are drawn into waveguide 1211 by voltage source 1203 contacted to
the substrate and to gate electrode 1210. In this embodiment, the
waveguide 1211 acts as the active arm of the interferometer, and
the charge carriers added to waveguide/active arm 1211 modulate the
phase of input SPhP beam 1212 as it travels through the waveguide
and is output as output beam 1213. As with the other electrically
pumped embodiments described herein, in some cases, barrier layer
1202 may be omitted depending on the electrical characteristics of
the materials constituting the substrate 1202, the waveguide 1211,
and the gate electrode 1210.
FIGS. 13 and 14 depict additional embodiments of an
interferometrically based actively tunable polar-dielectric optical
modulator in accordance with the present invention, in which
modulation is achieved through the use of a Fabry-Perot cavity
formed in the polar-dielectric material.
As illustrated in FIGS. 13 and 14, such modulators include an SPhP
waveguide 1311/1411 having a Fabry-Perot cavity 1314/1414 formed by
reflective features fabricated into the waveguide. The reflective
features may assume many forms, such as gaps 1315a and 1315b as
shown in FIG. 13, partial gaps 1414a and 1414b shown in FIG. 14, or
ridges built up on a top surface of the waveguide through
deposition of almost any material.
Transmission of the incident SPhP beam 1312/1412 traveling along
the waveguide will not exit the Fabry-Perot cavity as beam
1313/1413 unless the wavelength of the SPhP beam is near a resonant
wavelength of the cavity. The cavity transmission wavelength is
strongly dependent on the refractive index of the material forming
the cavity, which, as described above, in the case of
polar-dielectrics, can be selectively controlled near the
Reststrahlen wavelength band through the introduction of charge
carriers into the cavity. Thus, in accordance with the present
invention, in the embodiment illustrated in FIG. 13, the
transmitted beam 1313 that results from the incident SPhP beam 1312
traveling through waveguide 1311 can be manipulated by controlling
optical pump beam 1303 to alter the charge carrier density N and
thus the resonant wavelength of the Fabry-Perot cavity 1314 in the
waveguide. Similarly, in the embodiment illustrated in FIG. 14, the
charge carrier density in the cavity 1414 can be electrically
controlled in a manner described above through voltage source 1403
contacted to substrate 1402 and gate electrode 1410, which may
optionally be separated from the waveguide 1411 by barrier layer
1409, depending on the electrical characteristics of the materials
constituting substrate 1402, waveguide 1411, and gate electrode
1410.
The method of producing modulation by exploiting the sensitivity of
the refractive index n.sub.r(N,.lamda.) in polar-dielectrics to
charge-carrier concentration in accordance with the present
invention may also be used to effect beam steering on planar SPhP
waveguides. Wavelength-sensitive steering can be used for
subsequent wavelength-sensitive modulation, demodulation, or
spectral analysis.
FIGS. 15 and 16 depict exemplary embodiments of such devices in
accordance with the present invention that can steer an SPhP beam
travelling along a waveguide. Steering occurs when incoming SPhP
beam 1512/1612 travelling on a polar-dielectric waveguide 1511/1611
encounters an edge of the carrier pattern at some incident angle,
and refracts as dictated by Snell's law. The angle of refraction
depends on the refractive index n.sub.r(N,.lamda.) of the
waveguide, which can be controlled through the injection of charge
carriers into the polar-dielectric material forming the
waveguide.
Thus, in the devices illustrated in FIGS. 15 and 16, an incoming
SPhP beam 1512/1612 traveling along a polar-dielectric waveguide
1511/1611 is refracted at the edges of a spatially patterned
carrier distribution 1516/1616 formed in the waveguide to produce
refracted outgoing beam 1513/1613.
In the optically pumped embodiment shown in FIG. 15, the pattern of
carriers is produced through the use of optical pump beam 1503,
which is shaped through a mask or through writing, transferring or
otherwise fabricating the desired shape onto the waveguide
1511.
In addition, in the optically pumped embodiment illustrated in FIG.
15, the pattern of optically pumped carriers could form a
diffraction grating operated in either transmission, reflection, or
both. The pitch of the grating could be conveniently varied by
varying the incident pump-light pattern 1503 to direct different
SPhP wavelengths into desired locations on the chip.
In the electrically pumped embodiment shown in FIG. 16, carriers
are pumped into the polar-dielectric material by means of voltage
source 1603 contacted to substrate 1602 and gate electrode 1610,
which optionally is separated from the polar-dielectric waveguide
by barrier 1609. To eliminate refraction caused by the presence of
the barrier and the electrode in the modal fields of the SPhP wave,
only the portion of the electrode having the desired pattern is
powered, e.g., a prism-shaped sub-element 1610a shown in FIG.
16.
In addition, although FIGS. 15 and 16 depict a prism-shaped carrier
pattern which steers incoming beam 1512/1612 to produce steered
outgoing beam 1513/1613, other carrier patterns could be designed
so as to steer the beam in one or more desired directions depending
on the desired function of the outgoing beam.
In addition, in some embodiments, various functions can be realized
by placing a device or devices 1517/1617 downstream. For example,
if outgoing beam 1513/1613 were a broad spectrum, an aperture
located at some position along device 1517/1617 would pass only the
wavelength that refracted at the proper angle, and the overall
device would serve as a tuned source, with all the functionality
that implies from the discussion above. To realize a wavelength
modulator, the pump-beam intensity or the voltage would be
modulated so that the wavelength of SPhP beams passing through the
aperture would be modulated (or demodulated). On the other hand, if
outgoing beam 1513/1613 were monochromatic, such an aperture would
function as an intensity modulator or switch. The assembly
1517/1617 could also incorporate an optical detector to convert the
SPhP power into electrical signals.
When equipped with wavelength-tunable elements, SPhP-waveguide
devices in accordance with the present invention can serve as an
integrated sensor of molecules adsorbed on a surface thereof.
For example, in the embodiments of FIGS. 15 and 16 described above,
molecules 1507/1607 residing in the evanescent modal field of the
SPhP beams would absorb power from the SPhPs at the wavelength
.lamda..sub.vib associated with the molecules' characteristic
vibrational frequencies. This absorption would then be detected by
the detector assembly 1517/1617 as a dip in the received power when
the system is tuned to direct .lamda..sub.vib at the detector.
An alternative sensing device that also employs propagating SPhP
beams involves use of optical antennas fabricated on or into a SPhP
waveguide. In such a device, the resonant properties of the
antennas will improve sensitivity through surface-enhanced infrared
absorption (SEIRA) as discussed above.
FIGS. 17 and 18 illustrate exemplary embodiments of such devices
employing both an SPhP waveguide and optical antennas in accordance
with the present invention. The embodiment illustrated in FIG. 17
is in the form of an integrated on-chip spectrometer tuned through
.lamda..sub.vib by means of optically pumped tuning. The operation
of this device is very similar to the embodiment shown in FIGS.
4A-4E described above, except that instead of the light beams 405
and 406 propagating through air as in that embodiment, in the
embodiment illustrated in FIG. 17, there are SPhPs 1712 and 1713
travelling on waveguide 1711.
Thus, the devices illustrated in FIGS. 17 and 18 constitute
integrated SEIRA sensors utilizing antenna arrays 1701/1801
disposed on an upper surface of SPhP waveguide 1711/1811 and
detector assembly 1717/1817. An incident SPhP beam 1712/1812
travelling on waveguide 1711/1811 reflects from antenna array
1701/1801 to become SPhP beam 1713/1813 incident on detector
assembly 1717/1818. The reflected spectrum of SPhP beam 1713/1813
will exhibit a strong peak at the resonance wavelength
.lamda..sub.res of the antenna array which, as described above, can
be tuned by altering the charge-carrier density N in the
nanoantennas 1701/1801, either with the intensity of pump
light-beam 1703 in the optically pumped embodiment shown in FIG. 17
or by the applied voltage from voltage source 1803 in the
electrically pumped embodiment shown in FIG. 18, in a manner as
described in the previous embodiments. The vibrational absorptions
of adsorbed molecule 1707/1807 will cause reductions in the
reflected intensity in the same manner as described above with
respect to FIGS. 4A-4E and FIG. 6, with the reflected intensity
being detected by detector assembly 1717/1817.
A variant of the SPhP waveguide is the so-called "epsilon near
zero" (ENZ) waveguide. See, e.g., A. Alu and N. Engheta, "All
optical metamaterial circuit board at the nanoscale," Phys. Rev.
Lett. 2009, 103, 143902. Here, a low-index medium such as air
(.di-elect cons..sub.1,air(.lamda.).apprxeq.1) is surrounded by a
medium with .di-elect cons..sub.1(.lamda.).apprxeq.0. In this
configuration, air is the optically denser material and will serve
as a dielectric waveguide. A novel aspect of the waveguide is that
in the absence of loss, energy propagates with a constant phase
.phi.=kz of zero. Here z is distance, and k is the propagating-mode
wavevector which, in the limit of no loss, is given by k= {square
root over (.di-elect cons..sub.1)}k.sub.0, where k.sub.0 is the
free-space wavevector 2.pi./.lamda.. Polar-dielectrics represent
convenient ENZ materials in the infrared, as .di-elect
cons..sub.1(.lamda.).apprxeq.0 is at the
longitudinal-optical-phonon wavelength, .lamda..sub.LO.
Thus, as shown in FIGS. 19 and 20, in accordance with this
embodiment of the present invention, such devices can be in the
form of a polar-dielectric material 1916/2016 on a substrate
1902/2002. A channel or hollow tube 1917/2017 is fabricated within
the polar-dielectric layer and serves as the waveguide. If the
waveguide operates at a wavelength .lamda. less than, but near to,
.lamda..sub.LO, its propagation characteristics will be especially
sensitive to changes in carrier concentration (see the plot in FIG.
3A), and so controlling carrier concentration in the
polar-dielectric material in accordance with the present invention
can be expected to modulate the phase and amplitude of a beam
transmitted through the waveguide formed in the material. For
example, for large carrier densities, the hollow tube 1917/2017
would act as an IR waveguide below cut-off and block the
propagation of an incident beam 1905/2005; decreasing the carrier
density could bring .di-elect cons..sub.1(.lamda.).apprxeq.0, and
the beam 1905/2005 would be transmitted as beam 1905/2006. As with
previously described devices, control of the device may be
accomplished by adjusting carrier density in the polar-dielectric,
either through optical pumping using pump beam 1903 or electrical
charge injection by voltage source 2003.
Other embodiments of the devices described herein can be made, and
such embodiments are within the scope and spirit of the present
invention.
For example, in other embodiments, a device in accordance with the
present invention can be configured with multiple SPhP materials,
whereby a multifrequency structure can be created. As described in
more detail below, in some such embodiments, charge carriers can be
selectively injected into one or more of the materials, e.g., based
on the various band gaps of the constituent materials, to
controllably affect the resonant frequency .lamda..sub.res of SPhP
nanoantennas or the phases of the interface polaritons
.lamda..sub.SPhP between layers.
In some embodiments, at least one of the polar-dielectric materials
can be in contact with a substrate; in such embodiments, the
controllable electrical source is operatively connected to the
substrate and the at least one polar-dielectric material and is
configured to controllably inject charge carriers from the
substrate into the at least one polar-dielectric material.
In other embodiments, at least one polar-dielectric material is in
contact with a contact layer comprising a highly doped substrate,
metallic film or a van der Waals (e.g., hexagonal boron nitride
(hBN) or molybdenum disulfide (MoS.sub.2)) film, where the
controllable electrical source are operatively connected to both
the contact layer and the at least one polar-dielectric material
and are configured to controllably inject charge carriers from the
contact layer into the at least one polar-dielectric material.
In still other embodiments, at least one of the polar-dielectric
materials can be situated between an adjacent doped substrate on a
first side thereof and a contact layer comprising one of a highly
doped substrate, metallic film, or van de Waals film on the other
side, where the charge carrier source is operatively connected to
both the substrate and to the contact layer and is configured to
controllably inject charge carriers of one polarity (electron or
hole) from the substrate and of the opposite polarity from the
contact layer into at the at least one polar-dielectric
material.
FIGS. 21-25 illustrate various embodiments and aspects of such
structures in accordance with the present invention. As shown in
the FIGURES and as described in more detail below, in some
embodiments, the multiple materials can be arranged to form a
multi-layered structure in a stacked configuration where each
successive layer covers only the top-facing surface of the previous
one, while in other embodiments, the multiple materials can be
arranged in a "conformally overgrown" layer configuration, where
each successive material layer completely covers the previous
layer.
In the case of the a stacked configuration, such a structure can be
grown via epitaxial growth of thin films of gallium nitride,
aluminum nitride and/or related ternary compounds (e.g.
Al.sub.xGa.sub.1-xN) on silicon carbide or sapphire substrates.
Such films may also be deposited by any other appropriate means
such as sputtering, by ALD or by atomic layer epitaxy (ALE).
In the case of the conformally overgrown geometry, such structures
can be grown via standard nanowire growth techniques, for instance
the subsequent growth of AlGaN overlayers on GaN nanowires via the
vapor-liquid solid method or through confined epitaxial growth. Of
course other growth and/or fabrication methods resulting in similar
and/or related structures can also be used. In some embodiments,
all of the materials can be polar-dielectric materials that support
SPhPs, while in other embodiments, only some of the materials will
be SPhP materials, with the other materials being chosen for the
electronic or optical properties (e.g. Si for simplified
fabrication and/or high index of refraction).
In still other configurations, a SPhP structure can comprise
multiple materials wherein one or more SPhP materials can be
embedded within a host material, where the host material may or may
not support SPhPs. For instance, GaN nanowires embedded in spin-on
glass or SiC colloidal particles embedded within Al.sub.2O.sub.3
anodized templates.
FIGS. 21A-21C and 22A-22C illustrate these three exemplary
configurations of an SPhP nanoantenna (FIGS. 21A-21C) and an SPhP
waveguide (FIGS. 22A-22C) formed from multiple SPhP materials in
accordance with some aspects of the present invention.
Thus, FIGS. 21A/22A illustrates a nanoantenna/waveguide with
multiple materials 2101/2201, 2102/2202, and 2103/2203 arranged in
a stacked configuration, where each material is disposed only on
the upper surface of the one below it.
While many potential embodiments can be envisioned, one potential
structure could consist of three SPhP materials, each with a
different bandgap, with the material with the largest gap on the
top surface to enable sufficient transmission through this material
to permit optical excitation of the underlying SPhP materials.
Another such embodiment could be a quantum well type structure
where a SPhP material is `sandwiched` between two other SPhP or
non-polar semiconductor materials with larger bandgaps whereby
carrier injection into the middle material could be realized at
high concentrations (e.g. AlGaAs/GaAs/AlGaAs).
FIGS. 21B/22B illustrate a nanoantenna/waveguide in which materials
2101/2201, 2102/2202, and 2103/2203 are arranged in an overgrown
configuration, where each successive layer of material completely
surrounds the previous one, while FIGS. 21C/22C illustrate an
exemplary embodiment of a nanoantenna/waveguide with particles of
SPhP materials 2102/2202 and 2103/2203 embedded within host
material 2101/2201.
Other embodiments may also be possible, for example, a layered or
overgrown configuration where one layer includes embedded materials
or a layered structure where one layer includes multiple materials
in an overgrown configuration, and all such embodiments are deemed
to be within the scope of the present invention.
By incorporating multiple SPhP materials, desired optical
performance can be realized either through the choice of materials
with a given index of refraction, one where the index of refraction
can be changed over a large range through carrier injection, or
materials can be chosen to have resonances in multiple frequency
ranges.
For instance, in the case where materials are chosen to exhibit
resonances in multiple frequency ranges, multiresonant SPhP
antennas could be used to enhance sensitivity and selectivity for
infrared absorption for molecular vibrational transitions through
the surface enhanced infrared absorption (SEIRA) method. In such an
embodiment, the resonant wavelengths of the antenna would be
required to spectrally match those of molecular absorption bands
due to vibrational transitions. Because these vibrational
absorption bands can occur over a spectral range broader than the
Reststrahlen band of a single SPhP material, use of multiple
materials would enable SEIRA for multiple vibrational bands. Via
the injection of carriers, these SPhP resonant modes could be
further tuned to achieve SEIRA for several vibrational bands of the
same molecule or to test for those associated with similar
molecules that need to be excluded from the identification process
to avoid false positive detection. By injecting carriers into one
of two SPhP materials, tuning of the antenna resonance from the
frequency for the vibrational absorption band of the molecule of
interest to another could be established, while injecting carriers
into two materials might be beneficial for detuning the antenna
resonances from the vibrational absorption band of the molecule of
interest to those of a similar molecule.
FIGS. 23A-23C illustrate three exemplary mechanisms by which a
controllable electrical source can inject charge carriers into an
SPhP nanoantenna having multiple layers of different SPhP materials
as described above with respect to FIG. 21A. It should be noted
that although FIGS. 23A-23C illustrate a nanoantenna having
multiple materials in a layered structure, the principles described
herein may be equally applicable to nanoantennas having multiple
materials in the overgrown and embedded configurations described
above and to waveguides in any of the possible multi-material
configurations contemplated herein.
Thus, as shown in FIG. 23A, in one embodiment, charge carriers can
be injected "bottom up", e.g., from a highly doped substrate or
other bottom layer into a polar-dielectric layer via unipolar
injection. In the embodiment illustrated in FIG. 23A, the injected
charge carriers are holes (h+) but one skilled in the art will
readily recognize that in other cases the injected charge carriers
can be electrons (e-).
In another embodiment, illustrated in FIG. 23B, charge carriers can
be injected from an upper layer such as a highly doped top layer, a
metal contact layer, or a Schottky contact layer into a lower
polar-dielectric layer; in such cases the unipolar injected charge
carriers will be electrons (e-) and shown in FIG. 23B, though in
other embodiments having an appropriately configured top layer, the
"top down" injected carriers can be holes (h+).
In still another embodiment, illustrated in FIG. 23C, charge
carriers can be injected into a polar-dielectric material from both
the top and the bottom, with electrons being injected from one side
and holes being injected from the other via bipolar injection.
FIGS. 24A-24D illustrate exemplary ways in which the resonant
frequency .lamda..sub.res, of a polar-dielectric nanoantenna formed
from multiple materials can be tuned through the selective,
controllable electrical or optical injection of charge carriers
into one or more of the materials in accordance with the present
invention. In the embodiments shown in FIGS. 24A-24D, the
nanoantenna is formed from multiple materials, denoted as materials
2401, 2402, 2403, and 2404, in a layered structure. One skilled in
the art, however, will readily recognize that the principles
described herein may be used with antennas formed from multiple
materials in the overgrown and embedded configurations described
above.
Thus, in a first embodiment, aspects of which are illustrated in
FIG. 24A, the resonant frequency .lamda..sub.res(.di-elect
cons..sub.2) of a polar-dielectric material 2402 can be directly
modified through the electrical or optical injection of charge
carriers into material 2402 from an adjacent layer 2403 or 2401,
e.g., an injection of electrons e- from layer 2403 as shown in the
FIGURE, wherein the injection of charge carriers modifies the
permittivity .di-elect cons..sub.2 of material 2402. Alternatively,
optical injection of charge carriers directly into material 2403 is
possible.
In a second embodiment, aspects of which are illustrated in FIG.
24B, carriers can be injected into an adjacent material (e.g.,
material layer 2403 as shown in the FIGURE) to modify the index of
refraction n.sub.3 of material 2403 and thereby modify the resonant
frequency .lamda..sub.res(n.sub.3) of layer 2402 as a function of
the index of refraction n.sub.3 of material layer 2403.
In a third embodiment, aspects of which are illustrated in FIG.
24C, carriers (e.g., holes (h+) as shown in the FIGURE) can be
directly injected into material 2402 to change its permittivity
.di-elect cons..sub.2 and carriers (e.g., electrons (e-) as shown
in the FIGURE) can be directly injected into material 2403 to
change its index of refraction n.sub.3 such that the resonant
frequency .lamda..sub.res(.di-elect cons..sub.2, n.sub.3) of
material 2402 is changed with the change in the permittivity
.di-elect cons. of the material 2042 and the index of refraction n
of the adjacent material 2403.
Finally, in a fourth embodiment, illustrated in FIG. 24D, both the
permittivies .di-elect cons. and the indices of refraction n of
both material layers 2402 and 2403 can be changed through the
injection of carriers thereinto, e.g., the injection of electrons
(e-) into material layer 2403 and holes (h+) into material layer
2402, such that the resonant frequencies of both material layers
are changed, with the resonant frequency of material layer 2402
being .lamda..sub.res.sup.2(.di-elect cons..sub.2,n.sub.3) and the
resonant frequency of material layer 2403 being
.lamda..sub.res.sup.3(.di-elect cons..sub.3,n.sub.2).
FIGS. 25A-25C illustrate exemplary ways in which the behavior of a
wave traveling through a multi-material waveguide can be changed
through the injection of charge carriers into one or more of the
materials in accordance with the present invention. By selectively
injecting charge carriers, either optically or electrically, one or
more of the materials forming the waveguide, the wavelength
.lamda..sub.SPhP of the interface polaritons between any two layers
can be controllably changed so that they are in phase, out of
phase, or at a harmonic.
Thus, as illustrated in FIGS. 25A-25C, charge carriers, e.g.,
electrons (e-) can be injected into material layer 2503 to cause
the wavelength .lamda..sub.SPhP.sup.3,2 of the interface polaritons
between material layers 2503 and 2502 to be in phase (FIG. 25A)
with the wavelength .lamda..sub.SPhP.sup.2,1 of the interface
polaritons between material layers 2042 and 2401, to be out of
phase (FIG. 25B), or to be a harmonic, e.g.,
.lamda..sub.SPhP.sup.3,2=2.lamda..sub.SPhP.sup.2,1 (FIG. 25C).
In still other embodiments, a device in accordance with the present
invention can be in the form of a plurality of LSPhP resonators
fabricated from a polar-dielectric material configured to thermally
stimulate SPhPs that will in turn emit photons with a tailored
spectrum and polarization dictated by the polar dielectric
nanostructure when the material is raised to a higher temperature
than its surroundings, e.g., by optical heating, resistive heating,
conductive heating, radiative heating, etc. It has been shown
previously that sub-wavelength structures of SPhP materials such as
micron-diameter wires of SiC modify the black-body emission spectra
of the material, providing distinct emission peaks which correspond
to the specific LSPhP resonances, see J. S. Schuller, T. Taubner,
and M. L. Brongersma, "Optical antenna thermal emitters," Nature
Photonics 2009, 3, 658-661, and so by modifying the resonance
position of these LSPhP modes, the thermal emission spectrum of the
polar-dielectric material can be correspondingly modified. Thus, in
another embodiment of the present invention, the thermal emission
spectrum of such heated polar-dielectric materials can be tuned by
injecting charge carriers directly into the material.
In still other embodiments, a device in accordance with the present
invention can be fabricated from a metamaterial formed in whole or
in part from SPhP materials such that the metamaterial exhibits
SPhPs which affect the optical properties of the metamaterial when
it is stimulated by an external stimulation such as heating,
exposure of the metamaterial to an electron beam, or exposure of
the metamaterial to an infrared optical beam having at least one
wavelength within a Reststrahlen band of at least one of the
polar-dielectric materials. As with the case of other embodiments
described above, a value of at least one optical property of such a
metamaterial is dependent on the concentration of charge carriers
in the material, and thus, in accordance with the present invention
can be tuned by the controllable injection of charge carriers into
the material. In these embodiments in accordance with the present
invention, the effective index of refraction of an SPhP-based
metamaterial, which in some cases can be negative, can be modified
via carrier injection such that the output angle of the refracted
light can be modulated through the optical pump power or the
electrostatic gate voltage. This concept could also be applied to
modify the corresponding ordinary (e.g., in-plane) and
extraordinary (e.g., out-of-plane) permittivities of the
anisotropic lattice of a polar-dielectric material or of an
anisotropic structure. It can also be used to modify the
birefringence (i.e. different indices of refraction for orthogonal
crystal axes; e.g. 4H--SiC, wurtzite GaN) or hyperbolic (i.e.
simultaneous positive and negative real permittivities from
orthogonal crystal axes, e.g., as in hBN or MoS.sub.2) properties
of SPhP materials, metamaterials, or other device designs.
ADVANTAGES AND NEW FEATURES
The present invention provides many important advantages over the
prior art.
As noted above, an important advantage of employing LSPhP resonant
antennas is the ability to control the resonant wavelength by
virtue of carriers injected directly into the antenna, a virtual
impossibility for plasmonic systems.
This provides a significant improvement over prior art methods in
which coarse tuning was achieved by preselecting the shape of the
antennas, using a well-known phenomenon for such sub-wavelength
dipole resonators. See S. Link and M. A. El-Sayed, "Shape and size
dependence of radiative, non-radiative and photothermal properties
of gold nanocrystals," Intl. Reviews Phys. Chem., 2000, 19,
409-453; see also Bukasov, supra.
Another key difference between plasmonic and SPhP antennas is the
much lower loss that can be exhibited by phonon polaritonic
materials. A telling comparison occurs at wavelengths within the
8-12 .mu.m atmospheric transmission window of great importance to
both Department of Defense (DoD) and commercial sectors. This
wavelength range is also of use for identifying a host of molecules
through absorptions at their characteristic vibrational
frequencies, since many chemical species exhibit vibrational modes
within this spectral range. Among the materials that possess the
necessary Reststrahlen band in this wavelength range are SiC, GaN,
BN, BC, AlN, Al.sub.2O.sub.3, and SiO.sub.2 and ternary compounds
such as AlGaN, though any other appropriate materials may also be
used. Computations based on phonon lifetimes show that the quality
factor Q for LSPhP resonators can exceed 500 in SiC, whereas for
antennas made of the lowest loss metals in the same wavelength
range, Q factors are less than 10.
The large values of Q enable entirely new capabilities, for example
in vibrational-based sensing applications described herein. For
example, spectral width of an SPhP antenna resonance can be as
narrow as a few wavenumbers (cm.sup.-1), similar to the vibrational
linewidths of molecules in the condensed-phase. This would enable
the selective enhancement of single vibrational modes of a given
molecule, thus enabling levels of spectral specificity to the SEIRA
effect that are impossible with plasmonic-based methods. The narrow
bandwidth associated with the high Q transmission or reflectance
peaks described above also offers a new source of tunable radiation
having a large tuning range exceeding present sources.
The ability to produce nanoscale low loss resonators also leads to
the ability to produce very large resonant optical fields that will
improve sensitivity for molecular sensing.
Although particular embodiments, aspects, and features have been
described and illustrated, it should be noted that the invention
described herein is not limited to only those embodiments, aspects,
and features, and it should be readily appreciated that
modifications may be made by persons skilled in the art. The
present application contemplates any and all modifications within
the spirit and scope of the underlying invention described and
claimed herein, and all such embodiments are within the scope and
spirit of the present disclosure.
* * * * *
References