U.S. patent number 8,421,558 [Application Number 12/752,167] was granted by the patent office on 2013-04-16 for boundary acoustic wave device having an interdigital transducer electrode in a groove.
This patent grant is currently assigned to Murata Manufacturing Co., Ltd.. The grantee listed for this patent is Takashi Yamane. Invention is credited to Takashi Yamane.
United States Patent |
8,421,558 |
Yamane |
April 16, 2013 |
Boundary acoustic wave device having an interdigital transducer
electrode in a groove
Abstract
A boundary acoustic wave device includes a piezoelectric
substrate having an upper surface in which grooves are provided,
IDT electrodes which are at least partially embedded in the grooves
in the upper surface of the piezoelectric substrate in a thickness
direction of the IDT electrodes, and first and second dielectric
layers stacked on the upper surface of the piezoelectric substrate.
The second dielectric layer has an acoustic velocity greater than
that of the first dielectric layer.
Inventors: |
Yamane; Takashi (Kusatsu,
JP) |
Applicant: |
Name |
City |
State |
Country |
Type |
Yamane; Takashi |
Kusatsu |
N/A |
JP |
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Assignee: |
Murata Manufacturing Co., Ltd.
(Kyoto, JP)
|
Family
ID: |
42813865 |
Appl.
No.: |
12/752,167 |
Filed: |
April 1, 2010 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20100259342 A1 |
Oct 14, 2010 |
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Foreign Application Priority Data
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Apr 14, 2009 [JP] |
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2009-097932 |
Mar 4, 2010 [JP] |
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2010-048082 |
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Current U.S.
Class: |
333/193;
310/313B; 333/195 |
Current CPC
Class: |
H03H
9/02834 (20130101); H03H 9/14541 (20130101) |
Current International
Class: |
H03H
9/13 (20060101); H03H 9/25 (20060101); H03H
9/15 (20060101); H03H 9/145 (20060101) |
Field of
Search: |
;333/193-196
;310/313B |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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2008-294538 |
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Dec 2008 |
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JP |
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2007/124732 |
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Nov 2007 |
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WO |
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WO 2008/044411 |
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Apr 2008 |
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WO |
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2010/016192 |
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Feb 2010 |
|
WO |
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Other References
English language machine translation of JP 2008-294538, published
Dec. 4, 2008. cited by examiner .
Official Communication issued in corresponding German Patent
Application No. 10 2010 016 431.3, mailed on Aug. 22, 2012. cited
by applicant.
|
Primary Examiner: Summons; Barbara
Attorney, Agent or Firm: Keating & Bennett, LLP
Claims
What is claimed is:
1. A boundary acoustic wave device, comprising: a piezoelectric
substrate including an upper surface in which a groove is provided;
a first dielectric layer stacked on the piezoelectric substrate; a
second dielectric layer stacked on the first dielectric layer; and
an interdigital transducer electrode disposed at a boundary between
the piezoelectric substrate and the first dielectric layer, at
least a portion of the interdigital transducer electrode being
embedded in the groove provided in the upper surface of the
piezoelectric substrate in a thickness direction of the
interdigital transducer electrode.
2. The boundary acoustic wave device according to claim 1, wherein
the portion of the interdigital transducer electrode is embedded in
the groove provided in the upper surface of the piezoelectric
substrate in the thickness direction of the interdigital transducer
electrode, and a remaining portion of the interdigital transducer
electrode projects upward from the upper surface of the
piezoelectric substrate.
3. The boundary acoustic wave device according to claim 1, wherein
the piezoelectric substrate is made of LiTaO.sub.3 or
LiNbO.sub.3.
4. The boundary acoustic wave device according to claim 1, wherein
the first dielectric layer is made of silicon oxide.
5. The boundary acoustic wave device according to claim 1, wherein
the second dielectric layer is made of at least one dielectric
material selected from the group consisting of silicon nitride,
silicon oxynitride, aluminum nitride, aluminum oxide, and
silicon.
6. The boundary acoustic wave device according to claim 1, wherein
the interdigital transducer electrode includes a main electrode
layer made of a metal material with a density of at least about 16
g/cm.sup.3.
7. The boundary acoustic wave device according to claim 6, wherein
the main electrode layer included in the interdigital transducer
electrode is made of at least one kind of metal selected from the
group consisting of Pt, W, Ta, Au, and Ir or an alloy containing
the selected metal as a main component.
8. The boundary acoustic wave device according to claim 6, wherein
the interdigital transducer electrode further includes an auxiliary
electrode layer made of a metal or an alloy, the metal or the alloy
having a density in a range of about 4 g/cm.sup.3 to about 16
g/cm.sup.3.
9. The boundary acoustic wave device according to claim 8, wherein
the auxiliary electrode layer is composed of at least one kind of
metal selected from the group consisting of Ti, TiO.sub.2, TiN, Ni,
and NiCr.
10. The boundary acoustic wave device according to claim 1, wherein
the interdigital transducer electrode further includes an electrode
layer composed of Al or a material containing Al as a main
component.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to boundary acoustic wave devices
used as resonators or filter devices, and more particularly to a
boundary acoustic wave device having a three-medium structure in
which a silicon oxide layer and a dielectric layer made of a
dielectric having an acoustic velocity higher than that of silicon
oxide are stacked on a piezoelectric substrate made of
LiTaO.sub.3.
2. Description of the Related Art
Boundary acoustic wave devices have recently been attracting
attention instead of surface acoustic wave devices. Boundary
acoustic wave devices do not require packages having cavities, and
therefore, the size thereof can be reduced.
International Patent Publication No. WO2007/124732 discloses a
boundary acoustic wave device 101 having a sectional structure
shown in FIG. 5. The boundary acoustic wave device 101 includes a
piezoelectric substrate 102 made of LiTaO.sub.3 and first and
second dielectric layers 103 and 104 stacked on the piezoelectric
substrate 102 in that order. The second dielectric layer 104 has an
acoustic velocity greater than that of the first dielectric layer
103. Interdigital transducer (IDT) electrodes 105 are provided on
the upper surface of the piezoelectric substrate 102, and the first
dielectric layer 103 is arranged so as to cover the IDT electrodes
105.
As described above, International Patent Publication No.
WO2007/124732 discloses the boundary acoustic wave device 101
having a three-medium structure in which the first and second
dielectric layers 103 and 104 are stacked on the piezoelectric
substrate 102. Since the second dielectric layer 104 is provided,
propagation loss in the boundary acoustic waves is reduced by the
waveguide effect. In addition, in the piezoelectric substrate 102
made of LiTaO.sub.3, characteristics, such as an electromechanical
coupling coefficient, can be increased by setting Euler angles
within predetermined ranges.
However, according to the structure described in International
Patent Publication No. WO2007/124732, the electromechanical
coupling coefficient cannot be sufficiently increased even when the
Euler angles are set within predetermined ranges.
SUMMARY OF THE INVENTION
To overcome the problems described above, preferred embodiments of
the present invention provide a boundary acoustic wave device that
is capable of increasing the electromechanical coupling coefficient
of the boundary acoustic waves and thereby increasing the band
width.
A preferred embodiment of the present invention provides a boundary
acoustic wave device including a piezoelectric substrate having an
upper surface in which a groove is provided, a first dielectric
layer stacked on the piezoelectric substrate, a second dielectric
layer stacked on the first dielectric layer, and an IDT electrode
disposed at a boundary between the piezoelectric substrate and the
first dielectric layer, at least a portion of the IDT electrode
being embedded in the groove provided in the upper surface of the
piezoelectric substrate in a thickness direction of the IDT
electrode.
In the boundary acoustic wave device according to this preferred
embodiment of the present invention, the portion of the IDT
electrode is embedded in the groove provided in the upper surface
of the piezoelectric substrate in the thickness direction of the
IDT electrode, and a remaining portion of the IDT electrode
projects upward from the upper surface of the piezoelectric
substrate. Thus, according to this preferred embodiment of the
present invention, a portion of the IDT electrode may preferably be
embedded in the groove in the thickness direction of the IDT
electrode. Alternatively, the IDT electrode may be entirely
embedded in the groove in the thickness direction thereof. In such
a case, the upper surface of the IDT electrode is flush or
substantially flush with the upper surface of the piezoelectric
substrate, and the upper surfaces of the first and second
dielectric layers can be flattened.
In the boundary acoustic wave device according to another preferred
embodiment of the present invention, the piezoelectric substrate is
preferably composed of LiTaO.sub.3 or LiNbO.sub.3, for example. By
using LiTaO.sub.3 or LiNbO.sub.3, the electromechanical coupling
coefficient can be increased. Therefore, the band width can be
increased.
In the boundary acoustic wave device according to another preferred
embodiment of the present invention, the first dielectric layer is
preferably composed of silicon oxide, for example. Since silicon
oxide has a positive temperature coefficient of resonant frequency
(TCF), when the first dielectric layer made of silicon oxide is
used together with a piezoelectric substrate made of a
piezoelectric material, such as LiTaO.sub.3, for example, which has
a negative temperature coefficient of resonant frequency (TCF), the
absolute value of the temperature coefficient of resonant frequency
(TCF) of the boundary acoustic wave device can be reduced.
In the boundary acoustic wave device according to another preferred
embodiment of the present invention, the second dielectric layer is
preferably composed of at least one kind of dielectric material
selected from the group consisting of silicon nitride, silicon
oxynitride, aluminum nitride, aluminum oxide, and silicon, for
example. These dielectric materials have an acoustic velocity
greater than that of silicon oxide, and therefore, the boundary
acoustic waves can be enclosed in an area inside from the second
dielectric layer. As a result, propagation loss can be reduced by
the waveguide effect.
In the boundary acoustic wave device according to another preferred
embodiment of the present invention, the IDT electrode preferably
includes a main electrode layer composed of a metal material with a
density of about 16 g/cm.sup.3 or more, for example. When the main
electrode layer is made of a metal material with a high density as
described above, the power durability of the IDT electrode can be
increased. Although the metal material is not particularly limited,
the metal material is preferably at least one kind of metal
selected from the group consisting of Pt, W, Ta, Au, and Ir or an
alloy containing the selected metal as a main component, for
example.
In the boundary acoustic wave device, the IDT electrode may
preferably further include an auxiliary electrode layer composed of
a metal or an alloy, the metal or the alloy having a density about
4 g/cm.sup.3 to about 16 g/cm.sup.3, for example. In such a case,
by suitably selecting the metal material of the auxiliary electrode
layer, the adhesion between the electrode layers and the adhesion
of the electrode layers to the first dielectric layer and the
piezoelectric substrate can be increased. In addition,
interdiffusion of the electrode materials between the electrode
layers at either side of the auxiliary electrode layer can be
suppressed. A material of the auxiliary electrode layer may
preferably be, for example, at least one kind of metal selected
from the group consisting of Ti, TiO.sub.2, TiN, Ni, and NiCr.
In addition, in the boundary acoustic wave device, the IDT
electrode may preferably further include an electrode layer
composed of Al or a material containing Al as a main component, for
example. Since the electrode layer composed of Al or a material
containing Al as a main component has a low electrical resistance,
the electrical resistance of the IDT electrode can be reduced.
In the boundary acoustic wave device according to the preferred
embodiments of the present invention, at least a portion of the IDT
electrode in the thickness direction thereof is embedded in a
groove provided in the upper surface of the piezoelectric
substrate. Therefore, the electromechanical coupling coefficient
can be increased. As a result, the band width of the boundary
acoustic wave device can be increased.
Therefore, a pass band width can be increased in, for example, a
boundary acoustic wave filter and a frequency difference between a
resonant frequency and an anti-resonant frequency can be increased
in, for example, a boundary acoustic wave resonator.
In addition, since a portion of the IDT electrode is embedded in
the groove provided in the upper surface of the piezoelectric
substrate, the amount of projection of the electrode is reduced.
Accordingly, irregularities of the boundary between the first
dielectric layer made of silicon oxide and the second dielectric
layer can be reduced. As a result, scattering of the waves at the
boundary can be suppressed and the characteristics of the boundary
acoustic wave device can be improved. In addition, since
irregularities of the boundary are relatively small, the silicon
oxide layer, that is, the first dielectric layer, can be evenly
scraped and frequency adjustment can be accurately performed using
the silicon oxide layer.
Other features, elements, characteristics and advantages of the
present invention will become more apparent from the following
detailed description of preferred embodiments of the present
invention with reference to the attached drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a partially enlarged sectional front view illustrating
the electrode structure of a boundary acoustic wave device
according to a first preferred embodiment of the present
invention.
FIG. 2A is a schematic plan view illustrating the electrode
structure of the boundary acoustic wave device according to the
first preferred embodiment of the present invention.
FIG. 2B is a schematic sectional front view of a boundary acoustic
wave device according to the first preferred embodiment of the
present invention.
FIG. 3 is a graph illustrating the attenuation frequency
characteristics of the boundary acoustic wave device according to a
preferred embodiment of the present invention and a boundary
acoustic wave device according to a comparative example.
FIG. 4 is a graph illustrating variations in the band width ratio
when the amount by which IDT electrodes are embedded in grooves is
varied in the boundary acoustic wave device according to a
preferred embodiment of the present invention.
FIG. 5 is a schematic sectional view illustrating the electrode
structure of a boundary acoustic wave device according to the
related art.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Preferred embodiments of the present invention will now be
described with reference to the drawings to clarify the present
invention.
FIGS. 2A and 2B are a schematic plan view and a schematic sectional
front view, respectively, of a boundary acoustic wave device
according to a first preferred embodiment of the present
invention.
As shown in FIG. 2B, a boundary acoustic wave device 1 includes a
piezoelectric substrate 2 preferably made of LiTaO.sub.3, for
example. Alternatively, the piezoelectric substrate 2 may be made
of other piezoelectric single crystals, such as LiNbO.sub.3 and
quartz crystal, or piezoelectric ceramics, such as PZT, for
example. Grooves 2a are provided in the upper surface of the
piezoelectric substrate 2.
IDT electrodes 3A to 3C are arranged such that the IDT electrodes
3A to 3C are at least partially embedded in the grooves 2a in the
thickness direction of the IDT electrodes 3.
As shown in FIG. 2A, an electrode structure according to the
present preferred embodiment includes the IDT electrodes 3A to 3C
and reflectors 4 and 5. The reflectors 4 and 5 are disposed on
either side of an area in which the IDT electrodes 3A to 3C are
provided in a direction in which the boundary acoustic waves
propagate. In other words, this electrode structure defines a
three-IDT longitudinally coupled resonator-type boundary acoustic
wave filter. Each of the IDT electrodes 3A to 3C includes a
plurality of electrode fingers 3a. The reflectors 4 and 5 are
preferably grating-type reflectors in which electrode fingers are
short-circuited at the ends thereof.
A first dielectric layer 6 is arranged so as to cover the
above-described electrode structure. A second dielectric layer 7
made of a dielectric material having an acoustic velocity greater
than that of the first dielectric layer 6 is provided on the upper
surface of the first dielectric layer 6.
According to the present preferred embodiment, the first dielectric
layer 6 is preferably made of silicon oxide and the second
dielectric layer 7 is preferably made of silicon nitride, for
example.
Thus, the boundary acoustic wave device 1 has a three-medium
structure in which the piezoelectric substrate 2, the first
dielectric layer 6, and the second dielectric layer 7 are stacked
in that order. In the boundary acoustic wave device having the
three-medium structure, since the second dielectric layer 7 is
provided, the boundary acoustic waves are enclosed in an area
inside from the second dielectric layer 7. Therefore, propagation
loss can be reduced by the waveguide effect.
Preferably, the first dielectric layer 6 is made of silicon oxide,
for example, as in the present preferred embodiment. Silicon oxide
has a positive temperature coefficient of resonant frequency (TCF).
In contrast, piezoelectric materials, such as LiTaO.sub.3 and
LiNbO.sub.3, have negative temperature coefficients of resonant
frequency (TCF). Therefore, the absolute value of the temperature
coefficient of resonant frequency (TCF) of the boundary acoustic
wave device 1 can be reduced by using silicon oxide. As a result,
variations in the frequency characteristics due to temperature
variations can be advantageously reduced.
The IDT electrodes 3A to 3C and the electrode fingers included in
the reflectors 4 and 5 are partially embedded in the grooves 2a.
Since the electrode fingers are arranged such that the grooves 2a
are filled with portions of the electrode materials, the
electromechanical coupling coefficient K.sup.2 can be increased in
the IDT electrodes 3A to 3C. As a result, the band width ratio can
be increased.
This will now be described more specifically.
FIG. 1 is an enlarged view of a portion of the boundary acoustic
wave device 1 according to the present preferred embodiment in
which one of the electrode fingers included in the IDT electrodes 3
is disposed. As shown in FIGS. 1 and 2B, each IDT electrode 3 is
partially embedded in the corresponding groove 2a. Here, A
represents the depth of the groove 2a.
Each IDT electrode preferably has a layered structure in which a Ti
film 11, a Pt film 12, a Ti film 13, an Al film 14, and a Ti film
15 are stacked in that order from the bottom, for example.
The density of Ti is about 4.54 g/cm.sup.3, the density of Pt is
about 21.45 g/cm.sup.3, and the density of Al is about 2.7
g/cm.sup.3.
In the present specification, the electrode layers included in each
IDT electrode are classified as follows in accordance with the
density of each electrode layer.
The electrode layers made of metal with a density of about 16
g/cm.sup.3 or more are defined as main electrode layers. Therefore,
the Pt film 12 is a main electrode layer. The electrode layers made
of metal with a density equal to or greater than about 4 g/cm.sup.3
and less than about 16 g/cm.sup.3 are defined as auxiliary
electrode layers. Therefore, the Ti films 11, 13, and 15 are
auxiliary electrode layers.
The electrode layers with a density of less than about 4 g/cm.sup.3
are defined as low-density electrode layers. Therefore, the Al film
14 is a low-density electrode layer.
The longitudinally coupled resonator-type boundary acoustic wave
device 1 according to the above-described preferred embodiment was
manufactured in accordance with the following specification, and
the attenuation frequency characteristics of the manufactured
device were measured.
The thickness of each layer of the boundary acoustic wave device 1
was set as follows: Second dielectric layer 7 made of silicon
nitride: about 2,200 nm First dielectric layer 6: about 760 nm
Layered electrode structure (Ti/Al/Ti/Pt/Ti from the top):
10/150/10/76/10 (the units are nm for each layer)
Here, the Euler angle .theta. of the piezoelectric substrate 2 made
of LiTaO.sub.3 was set to about 132.degree.. More specifically, the
Euler angles were (0.degree., 132.degree., 0.degree.). Therefore,
the propagation angle .PSI. was 0.degree.. The depth of the grooves
2a was set to about 86 nm.
The duty ratio of each IDT electrode was set to about 0.50.
The intersecting width of the electrode fingers in each IDT
electrode was set to about 80 .mu.m, and the numbers of pairs of
electrode fingers included in the IDT electrodes 3A to 3C were set
to 8, 14, and 8, respectively. The number of pairs of electrode
fingers included in each of the reflectors 4 and 5 was set to 15.
In the IDT electrodes 3A to 3C, .lamda. (wavelength of the boundary
acoustic wave) was set to about 1.9 .mu.m. Two electrode fingers in
an area in which two IDT electrodes are disposed adjacent to each
other are configured as narrow-pitch electrode fingers, and .lamda.
of the narrow-pitch electrode fingers was set to about 1.7
.mu.m.
In addition, .lamda. of the reflectors 4 and 5 was set to about
1.92 .mu.m.
The transmission characteristics of the boundary acoustic wave
device are shown by the solid lines in FIG. 3. For comparison, a
boundary acoustic wave device having the same structure as the
above-described structure except that the embedding amount A was
changed from 86 nm to 0 nm, that is, no grooves were provided, was
manufactured as a comparative example. The transmission
characteristics of the boundary acoustic wave device of the
comparative example are shown by the broken lines in FIG. 3.
As shown in FIG. 3, according to the present preferred embodiment,
as compared to the comparative example, the pass band width can be
increased, propagation loss in the pass band width can be reduced,
and the frequency of the pass band width can be increased. This is
because the electromechanical coupling coefficient K.sup.2 is
increased since the IDT electrodes are partially embedded in the
grooves 2a and the pass band width is increased accordingly. In
addition, since the Euler angle .theta. is close to the optimum
value, the acoustic velocity is increased. This presumably provides
the effect that the frequency is increased in addition to the
propagation loss being reduced.
Next, similar to the above-described preferred embodiment, a
plurality of types of boundary acoustic wave devices were
manufactured in which the amounts by which the IDT electrodes 3A to
3C and the electrode fingers in the reflectors 4 and 5 were
embedded in the grooves 2a in the thickness direction thereof were
set to about 0%, about 1%, about 2%, about 3%, about 4%, and about
5% of .lamda.. The device in which the embedding amount was about
0% of .lamda. corresponds to the above-described comparative
example.
The transmission characteristics of the plurality of types of
boundary acoustic wave devices were measured and the relationship
between the embedding amount and the band width ratio was observed.
The results are shown in FIG. 4. As shown in FIG. 4, as the
embedding amount increases, the band width ratio increases and the
electromechanical coupling coefficient K.sup.2 also increases
accordingly.
Although the IDT electrodes 3A to 3C were partially embedded in the
grooves 2a in the thickness direction thereof according to the
above-described explanation, the IDT electrodes 3A to 3C may be
entirely embedded in the grooves 2a in the thickness direction
thereof so that the upper surfaces of the IDT electrodes 3A to 3C
are flush or substantially with the upper surface of the
piezoelectric substrate 2. In addition, although the longitudinally
coupled resonator-type boundary acoustic wave device 1 is explained
above, the present invention is not limited to the three-IDT
longitudinally coupled resonator-type boundary acoustic wave filter
device. It is to be noted that the present invention can also be
applied to various other types of boundary acoustic wave
devices.
In the above-described preferred embodiments of the present
invention, the Ti films 13 and 15, which are auxiliary electrode
layers, are preferably provided at the upper side of the Pt film
12, which is a main electrode layer. In addition, the Ti film 11,
which is also an auxiliary electrode layer, is preferably provided
at the lower side of the Pt film 12. However, the auxiliary
electrode layers may be provided only at the upper side or the
lower side of the Pt film 12.
As described above, the auxiliary electrode layers may be provided
at the lower side of the main electrode layer in addition to the
upper side thereof since the material, such as Ti, which defines
the auxiliary electrode layers has a function of increasing the
adhesion between the electrode layers and the adhesion of the
electrode layers to the piezoelectric substrate and a function of
suppressing diffusion of the electrode materials.
In addition, although a single Pt film 12 was provided as the main
electrode layer in the above-described preferred embodiment, a
plurality of main electrode layers may be provided.
The metal which defines the main electrode layer is not
particularly limited as long as the density thereof is equal to or
greater than about 16 g/cm.sup.3. Preferably, at least one kind of
metal selected from the group consisting of Pt, W, Ta, Au, and Ir
or an alloy containing the selected metal as a main component, for
example, is used. In such a case, the reliability can be
increased.
The metal which defines each auxiliary electrode layer is not
particularly limited as long as the density thereof is in the range
of about 4 g/cm.sup.3 to about 16 g/cm.sup.3. Preferably, the
auxiliary electrode layers are made of at least one kind of metal
selected from the group consisting of Ti, TiO.sub.2, TiN, Ni, and
NiCr, for example. In such a case, the adhesion of the auxiliary
electrode layers to the other electrode layers and the
piezoelectric substrate can be increased and diffusion of the
electrode materials between the electrode layers can be
suppressed.
In addition, in the above-described preferred embodiments, the Al
film 14, which is a low-density electrode layer, is provided.
However, the low-density electrode layer may be omitted.
In addition, although Al is preferably used as the material of the
low-density electrode layer, the low-density electrode layer may
instead be formed of any metal having a density of less than about
4 g/cm.sup.3. Preferably, the low-density electrode layer is made
of Al or an alloy containing Al as a main component, for example.
In such a case, the resistance loss of the IDT electrodes can be
reduced since the electrical resistance of the low-density
electrode layer is relatively low.
In the above-described preferred embodiments, the IDT electrodes 3A
to 3C preferably have a layered structure in which the main
electrode layer, the auxiliary electrode layers, and the
low-density electrode layer are stacked. However, the structure of
the IDT electrodes 3A to 3C is not limited to the layered structure
in which a plurality of electrode layers are stacked. The IDT
electrodes 3A to 3C may include a single metal layer or alloy
layer, for example.
Although the first dielectric layer 6 is preferably made of silicon
oxide in the above-described preferred embodiments, the first
dielectric layer 6 may be made of other dielectric materials, such
as silicon nitride, silicon oxynitride, aluminum nitride, aluminum
oxide, and silicon, for example.
The second dielectric layer 7 may be made of any dielectric
material as long as the second dielectric layer 7 has an acoustic
velocity greater than that of the first dielectric layer 6.
Preferably, the dielectric material is silicon nitride, silicon
oxynitride, aluminum nitride, aluminum oxide, or silicon, for
example. In any case, since the acoustic velocity of the second
dielectric layer is relatively high, the energy of the boundary
waves can be enclosed in an area inside from the second dielectric
layer 7. As a result, the transmission characteristics can be
improved. In addition, since silicon nitride, silicon oxynitride,
aluminum nitride, aluminum oxide, and silicon are conventionally
used dielectric materials, the second dielectric layer 7 can be
made at a relatively low cost.
While preferred embodiments of the present invention have been
described above, it is to be understood that variations and
modifications will be apparent to those skilled in the art without
departing from the scope and spirit of the present invention. The
scope of the invention, therefore, is to be determined solely by
the following claims.
* * * * *