U.S. patent number 8,372,734 [Application Number 11/765,422] was granted by the patent office on 2013-02-12 for high-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles.
This patent grant is currently assigned to Nanosolar, Inc. The grantee listed for this patent is Matthew R. Robinson, Brian M. Sager, Jeroen K. J. Van Duren. Invention is credited to Matthew R. Robinson, Brian M. Sager, Jeroen K. J. Van Duren.
United States Patent |
8,372,734 |
Van Duren , et al. |
February 12, 2013 |
High-throughput printing of semiconductor precursor layer from
chalcogenide nanoflake particles
Abstract
Methods and devices are provided for transforming non-planar or
planar precursor materials in an appropriate vehicle under the
appropriate conditions to create dispersions of planar particles
with stoichiometric ratios of elements equal to that of the
feedstock or precursor materials, even after selective forces
settling. In particular, planar particles disperse more easily,
form much denser coatings (or form coatings with more interparticle
contact area), and anneal into fused, dense films at a lower
temperature and/or time than their counterparts made from spherical
nanoparticles. These planar particles may be nanoflakes that have a
high aspect ratio. The resulting dense films formed from nanoflakes
are particularly useful in forming photovoltaic devices. In one
embodiment, at least one set of the particles in the ink may be
inter-metallic flake particles (microflake or nanoflake) containing
at least one group IB-IIIA inter-metallic alloy phase.
Inventors: |
Van Duren; Jeroen K. J. (San
Francisco, CA), Robinson; Matthew R. (San Jose, CA),
Sager; Brian M. (Menlo Park, CA) |
Applicant: |
Name |
City |
State |
Country |
Type |
Van Duren; Jeroen K. J.
Robinson; Matthew R.
Sager; Brian M. |
San Francisco
San Jose
Menlo Park |
CA
CA
CA |
US
US
US |
|
|
Assignee: |
Nanosolar, Inc (San Jose,
CA)
|
Family
ID: |
40581288 |
Appl.
No.: |
11/765,422 |
Filed: |
June 19, 2007 |
Prior Publication Data
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Document
Identifier |
Publication Date |
|
US 20090107550 A1 |
Apr 30, 2009 |
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Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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11361433 |
Feb 23, 2006 |
7700464 |
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11361521 |
Feb 23, 2006 |
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11361497 |
Feb 23, 2006 |
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11361688 |
Feb 23, 2006 |
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11394849 |
Mar 30, 2006 |
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11290633 |
Nov 29, 2005 |
8048477 |
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10782017 |
Feb 19, 2004 |
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10943657 |
Sep 18, 2004 |
7306823 |
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11081163 |
Mar 16, 2005 |
7604843 |
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10943685 |
Sep 18, 2004 |
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Current U.S.
Class: |
438/502; 438/63;
438/95; 438/57; 427/64; 427/74 |
Current CPC
Class: |
C22C
1/0491 (20130101); C23C 18/1204 (20130101); B22F
1/0055 (20130101); H01L 31/18 (20130101); C23C
18/08 (20130101); H01L 31/0749 (20130101); C23C
18/1275 (20130101); C23C 18/1287 (20130101); B22F
9/04 (20130101); H01L 31/06 (20130101); H01L
31/0322 (20130101); B22F 2001/0033 (20130101); Y02E
10/541 (20130101); B22F 2999/00 (20130101); B22F
2999/00 (20130101); B22F 9/04 (20130101); B22F
2202/03 (20130101) |
Current International
Class: |
H01L
21/20 (20060101); B05D 5/12 (20060101) |
Field of
Search: |
;427/64,66,67,68,74
;438/57,63,84,85,89,95,502 |
References Cited
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U.S. Patent Documents
Foreign Patent Documents
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793277 |
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Sep 1997 |
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EP |
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61244004 |
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Oct 1986 |
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JP |
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63249379 |
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Oct 1988 |
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JP |
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6289369 |
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Oct 1994 |
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JP |
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2001044464 |
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Feb 2001 |
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JP |
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2005119705 |
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KR |
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KR |
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WO |
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03043736 |
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May 2003 |
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WO |
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WO 03/043736 |
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May 2003 |
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WO |
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Aug. 1, 1993, 2046-2052, vol. 74, No. 3, American Institute of
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|
Primary Examiner: Wilczewski; Mary
Attorney, Agent or Firm: Isenberg; Joshua D. JDI Patent
Parent Case Text
CROSS-REFERENCE TO RELATED APPLICATION
This application is a continuation-in-part of commonly-assigned,
U.S. patent application Ser. Nos. 11/361,433 now U.S. Pat. No.
7,700,464, 11/361,521, 11/361,497 now abandoned, and 11/361,688 now
abandoned all filed on Feb. 23, 2006. This application is a
continuation-in-part of commonly-assigned, co-pending application
Ser. No. 11/394,849 filed on Mar. 30, 2006. This application is a
continuation-in-part of commonly-assigned, co-pending application
Ser. No. 11/290,633 now U.S. Pat. No. 8,048,477 entitled
"CHALCOGENIDE SOLAR CELLS" filed Nov. 29, 2005 and Ser. No.
10/782,017, entitled "SOLUTION-BASED FABRICATION OF PHOTOVOLTAIC
CELL" filed Feb. 19, 2004 and published as U.S. patent application
publication 20050183767, the entire disclosures of which are
incorporated herein by reference. This application is also a
continuation-in-part of commonly-assigned, co-pending U.S. patent
application Ser. No. 10/943,657 now U.S. Pat. No. 7,306,823,
entitled "COATED NANOPARTICLES AND QUANTUM DOTS FOR SOLUTION-BASED
FABRICATION OF PHOTOVOLTAIC CELLS" filed Sep. 18, 2004, the entire
disclosures of which are incorporated herein by reference. This
application is a also continuation-in-part of commonly-assigned,
co-pending U.S. patent application Ser. No. 11/081,163 now U.S.
Pat. No. 7,604,843, entitled "METALLIC DISPERSION", filed Mar. 16,
2005, the entire disclosures of which are incorporated herein by
reference. This application is a also continuation-in-part of
commonly-assigned, co-pending U.S. patent application Ser. No.
10/943,685, entitled "FORMATION OF CIGS ABSORBER LAYERS ON FOIL
SUBSTRATES", filed Sep. 18, 2004, the entire disclosures of which
are incorporated herein by reference. The entire disclosures of all
documents listed above are incorporated herein by reference for all
purposes.
Claims
What is claimed is:
1. A method comprising: formulating a dispersion of particles
wherein about 50% or more of the particles are flakes each
containing at least one element from group IB, IIIA and/or VIA and
having a non-spherical, planar shape with a jagged, irregular
outline, wherein overall amounts of elements from group IB, IIIA
and/or VIA contained in the dispersion are such that the dispersion
has a desired stoichiometric ratio of the elements; coating a
substrate with the dispersion to form a precursor layer; and
processing the precursor layer in a suitable atmosphere to form a
dense film; wherein at least one set of the particles in the
dispersion are inter-metallic flake particles containing at least
one group IB-IIIA inter-metallic alloy phase.
2. The process of claim 1 wherein at least one set of the particles
in the dispersion is in the form of nanoglobules.
3. The process of claim 1 wherein at least one set of the particles
in the dispersion are in the form of nanoglobules and contain at
least one group IIIA element.
4. The process of claim 1 wherein at least one set of the particles
in the dispersion is in the form of nanoglobules comprising of a
group IIIA element in elemental form.
5. The process of claim 1 wherein the inter-metallic phase is not a
terminal solid solution phase.
6. The process of claim 1 wherein the inter-metallic phase is not a
solid solution phase.
7. The process of claim 1 wherein inter-metallic particles
contribute less than about 50 molar percent of group IB elements
found in all of the particles.
8. The process of claim 1 wherein inter-metallic particles
contribute less than about 50 molar percent of group IIIA elements
found in all of the particles.
9. The process of claim 1 wherein inter-metallic particles
contribute less than about 50 molar percent of the group IB
elements and less than about 50 molar percent of the group IIIA
elements in the dispersion deposited on the substrate.
10. The process of claim 9 wherein the molar percent is based on a
total molar mass of the elements in all particles present in the
dispersion.
11. The process of claim 1 wherein inter-metallic particles
contribute less than about 50 molar percent of the group IB
elements and more than about 50 molar percent of the group IIIA
elements in the dispersion deposited on the substrate.
12. The process of claim 1 wherein inter-metallic particles
contribute more than about 50 molar percent of the group IB
elements and less than about 50 molar percent of the group IIIA
elements in the dispersion deposited on the substrate.
13. The process of claim 1 wherein at least some of the particles
have a platelet shape.
14. The process of claim 1 wherein the coating step comprises
depositing the dispersion on the substrate.
15. The process of claim 1 wherein the dispersion comprises an
emulsion.
16. The process of claim 1 wherein the inter-metallic flake
particles are a binary material.
17. The process of claim 1 wherein the inter-metallic flake
particles are a ternary material.
18. A method comprising: formulating a dispersion of particles
wherein about 50% or more of the particles are flakes each
containing at least one element from group IB, IIIA and/or VIA and
having a non-spherical, planar shape with a jagged, irregular
outline, wherein overall amounts of elements from group IB, IIIA
and/or VIA contained in the dispersion are such that the dispersion
has a desired stoichiometric ratio of the elements; coating a
substrate with the dispersion to form a precursor layer; and
processing the precursor layer in a suitable atmosphere to form a
dense film; wherein at least one set of the particles in the
dispersion are inter-metallic flake particles containing at least
one group IB-IIIA inter-metallic alloy phase wherein the flakes
have an oxygen content of 5 wt % or less.
19. The process of claim 18 wherein at least one set of the
particles in the dispersion is in the form of nanoglobules.
20. The process of claim 18 wherein at least one set of the
particles in the dispersion are in the form of nanoglobules and
contain at least one group IIIA element.
21. The process of claim 18 wherein at least one set of the
particles in the dispersion is in the form of nanoglobules
comprising of a group IIIA element in elemental form.
22. The process of claim 18 wherein the inter-metallic phase is not
a terminal solid solution phase.
23. The process of claim 18 wherein the inter-metallic phase is not
a solid solution phase.
24. The process of claim 18 wherein inter-metallic particles
contribute less than about 50 molar percent of group IB elements
found in all of the particles.
25. The process of claim 18 wherein inter-metallic particles
contribute less than about 50 molar percent of group IIIA elements
found in all of the particles.
26. The process of claim 18 wherein inter-metallic particles
contribute less than about 50 molar percent of the group IB
elements and less than about 50 molar percent of the group IIIA
elements in the dispersion deposited on the substrate.
27. The process of claim 26 wherein the molar percent is based on a
total molar mass of the elements in all particles present in the
dispersion.
28. The process of claim 18 wherein inter-metallic particles
contribute less than about 50 molar percent of the group IB
elements and more than about 50 molar percent of the group IIIA
elements in the dispersion deposited on the substrate.
29. The process of claim 18 wherein inter-metallic particles
contribute more than about 50 molar percent of the group IB
elements and less than about 50 molar percent of the group IIIA
elements in the dispersion deposited on the substrate.
30. The process of claim 18 wherein at least some of the particles
have a platelet shape.
31. The process of claim 18 wherein the depositing step comprises
coating the substrate with the dispersion.
32. The process of claim 18 wherein the dispersion comprises an
emulsion.
33. The process of claim 18 wherein the inter-metallic material is
a binary material.
34. The process of claim 18 wherein the inter-metallic material is
a ternary material.
35. A method comprising: formulating a dispersion of particles
wherein about 50% or more of the particles are flakes each
containing at least one element from group IB, IIIA and/or VIA and
having a non-spherical, planar shape with a jagged, irregular
outline, wherein overall amounts of elements from group IB, IIIA
and/or VIA contained in the dispersion are such that the dispersion
has a desired stoichiometric ratio of the elements; coating a
substrate with the dispersion to form a precursor layer; and
processing the precursor layer in a suitable atmosphere to form a
dense film; wherein at least one set of the particles in the
dispersion are inter-metallic flake particles containing at least
one group IB-IIIA inter-metallic alloy phase wherein the flakes
have a chalcogen-based shell.
36. The process of claim 35 wherein at least one set of the
particles in the dispersion is in the form of nanoglobules.
37. The process of claim 35 wherein at least one set of the
particles in the dispersion are in the form of nanoglobules and
contain at least one group IIIA element.
38. The process of claim 35 wherein at least one set of the
particles in the dispersion is in the form of nanoglobules
comprising of a group IIIA element in elemental form.
39. The process of claim 35 wherein the inter-metallic phase is not
a terminal solid solution phase.
40. The process of claim 35 wherein the inter-metallic phase is not
a solid solution phase.
41. The process of claim 35 wherein inter-metallic particles
contribute less than about 50 molar percent of group IB elements
found in all of the particles.
42. The process of claim 35 wherein inter-metallic particles
contribute less than about 50 molar percent of group IIIA elements
found in all of the particles.
43. The process of claim 35 wherein inter-metallic particles
contribute less than about 50 molar percent of the group IB
elements and less than about 50 molar percent of the group IIIA
elements in the dispersion deposited on the substrate.
44. The process of claim 35 wherein inter-metallic particles
contribute less than about 50 molar percent of the group IB
elements and more than about 50 molar percent of the group IIIA
elements in the dispersion deposited on the substrate.
45. The process of claim 35 wherein inter-metallic particles
contribute more than about 50 molar percent of the group IB
elements and less than about 50 molar percent of the group IIIA
elements in the dispersion deposited on the substrate.
46. The process of claim 35 wherein at least some of the particles
have a platelet shape.
47. The process of claim 35 wherein the depositing step comprises
coating the substrate with the dispersion.
48. The process of claim 35 wherein the dispersion comprises an
emulsion.
49. The process of claim 35 wherein the inter-metallic material is
a binary material.
50. The process of claim 35 wherein the inter-metallic material is
a ternary material.
Description
FIELD OF THE INVENTION
This invention relates generally to semiconductor films, and more
specifically, to the fabrication of solar cells that use
semiconductor films based on IB-IIIA-VIA compounds.
BACKGROUND OF THE INVENTION
Solar cells and solar modules convert sunlight into electricity.
These electronic devices have been traditionally fabricated using
silicon (Si) as a light-absorbing, semiconducting material in a
relatively expensive production process. To make solar cells more
economically viable, solar cell device architectures have been
developed that can inexpensively make use of thin-film,
light-absorbing semiconductor materials such as
copper-indium-gallium-sulfo-di-selenide, Cu(In, Ga)(S, Se).sub.2,
also termed CI(G)S(S). This class of solar cells typically has a
p-type absorber layer sandwiched between a back electrode layer and
an n-type junction partner layer. The back electrode layer is often
Mo, while the junction partner is often CdS. A transparent
conductive oxide (TCO) such as zinc oxide (ZnO.sub.x) is formed on
the junction partner layer and is typically used as a transparent
electrode. CIS-based solar cells have been demonstrated to have
power conversion efficiencies exceeding 19%.
A central challenge in cost-effectively constructing a large-area
CIGS-based solar cell or module is that the elements of the CIGS
layer must be within a narrow stoichiometric ratio on nano-, meso-,
and macroscopic length scale in all three dimensions in order for
the resulting cell or module to be highly efficient. Achieving
precise stoichiometric composition over relatively large substrate
areas is, however, difficult using traditional vacuum-based
deposition processes. For example, it is difficult to deposit
compounds and/or alloys containing more than one element by
sputtering or evaporation. Both techniques rely on deposition
approaches that are limited to line-of-sight and limited-area
sources, tending to result in poor surface coverage. Line-of-sight
trajectories and limited-area sources can result in non-uniform
three-dimensional distribution of the elements in all three
dimensions and/or poor film-thickness uniformity over large areas.
These non-uniformities can occur over the nano-, meso-, and/or
macroscopic scales. Such non-uniformity also alters the local
stoichiometric ratios of the absorber layer, decreasing the
potential power conversion efficiency of the complete cell or
module.
Alternatives to traditional vacuum-based deposition techniques have
been developed. In particular, production of solar cells on
flexible substrates using non-vacuum, semiconductor printing
technologies provides a highly cost-efficient alternative to
conventional vacuum-deposited solar cells. For example, T. Arita
and coworkers [20th IEEE PV Specialists Conference, 1988, page
1650] described a non-vacuum, screen printing technique that
involved mixing and milling pure Cu, In and Se powders in the
compositional ratio of 1:1:2 and forming a screen printable paste,
screen printing the paste on a substrate, and sintering this film
to form the compound layer. They reported that although they had
started with elemental Cu, In and Se powders, after the milling
step the paste contained the Cu--In--Se.sub.2 phase. However, solar
cells fabricated from the sintered layers had very low efficiencies
because the structural and electronic quality of these absorbers
was poor.
Screen-printed Cu--In--Se.sub.2 deposited in a thin-film was also
reported by A. Vervaet et al. [9th European Communities PV Solar
Energy Conference, 1989, page 480], where a micron-sized
Cu--In--Se.sub.2 powder was used along with micron-sized Se powder
to prepare a screen printable paste. Layers formed by non-vacuum,
screen printing were sintered at high temperature. A difficulty in
this approach was finding an appropriate fluxing agent for dense
Cu--In--Se.sub.2 film formation. Even though solar cells made in
this manner had poor conversion efficiencies, the use of printing
and other non-vacuum techniques to create solar cells remains
promising.
There is a widespread notion in the field, and certainly in the
CIGS non-vacuum precursor field, that the most optimized
dispersions and coating contain spherical particles and that any
other shape is less desirable in terms of dispersion stability and
film packing, particularly when dealing with nanoparticles.
Accordingly, the processes and theories that dispersion chemists
and coating engineers are geared toward involve spherical
particles. Because of the high density of metals used in CIGS
non-vacuum precursors, especially those incorporating pure metals,
the use of spherical particles requires a very small size in order
to achieve a well dispersed media. This then requires that each
component be of similar size in order to maintain desired
stoichiometric ratios, since otherwise, large particles will settle
first. Additionally, spheroids are thought to be useful to achieve
high packing density on a packing unit/volume basis, but even at
high density, spheres only contact at tangential points which
represent a very small fraction of interparticle surface area.
Furthermore, minimal flocculation is desired to reduce clumping if
good atomic mixing is desired in the resulting film.
Due to the aforementioned issues, many experts in the non-vacuum
precursor CIGS community desire spherical nanoparticles in sizes
that are as small as they can achieve. Although the use of
traditional spherical nanoparticles is still promising, many
fundamental challenges remain, such as the difficulty in obtaining
small enough spherical nanoparticles in high yield and low cost
(especially from CIGS precursor materials) or the difficulty in
reproducibly obtaining high quality films. Furthermore, the lower
interparticle surface area at contact points between spheroidal
particles may serve to impede rapid processing of these particles
since the reaction dynamics depend in many ways on the amount of
surface area contact between particles.
SUMMARY OF THE INVENTION
Embodiments of the present invention address at least some of the
drawbacks set forth above. The present invention provides for the
use of non-spherical particles in the formation of high quality
precursor layers which are processed into dense films. The
resulting dense films may be useful in a variety of industries and
applications, including but not limited to, the manufacture of
photovoltaic devices and solar cells. More specifically, the
present invention has particular application in the formation of
precursor layers for thin film solar cells. The present invention
provides for more efficient and simplified creation of a
dispersion, and the resulting coating thereof. It should be
understood that this invention is generally applicable to any
processes involving the deposition of a material from dispersion.
At least some of these and other objectives described herein will
be met by various embodiments of the present invention.
In one embodiment of the present invention, a method is provided
for transforming non-planar and/or planar precursor metals in an
appropriate vehicle under the appropriate conditions to create
dispersions of planar particles with stoichiometric ratios of
elements equal to that of the feedstock or precursor metals, even
after selective settling. In particular, planar particles described
herein have been found to be easier to disperse, form much denser
coatings, and anneal into films at a lower temperature and/or time
than their counterparts made from spherical nanoparticles that have
substantially similar composition but different morphology. In one
embodiment of the present invention, a stable dispersion is one
that remains dispersed for a period of time sufficient to allow a
substrate to be coated. In one embodiment, this may involve using
agitation to keep particles dispersed in the dispersion. In other
embodiments, this may include dispersions that settle but can be
re-dispersed by agitation and/or other methods when the time for
use arrives.
In another embodiment of the present invention, a method is
provided that comprises of formulating an ink of particles wherein
substantially all of the particles are nanoflakes. In one
embodiment, at least about 95% of all particles (based on total
weight of all particles) are nanoflakes. In one embodiment, at
least about 99% of all particles (based on total weight of all
particles) are nanoflakes. In one embodiment, all particles are
nanoflakes. In yet another embodiment, all particles are
microflakes and/or nanoflakes. Substantially each of the nanoflakes
contains at least one element from group IB, IIIA and/or VIA,
wherein overall amounts of elements from group IB, IIIA and/or VIA
contained in the ink are such that the ink has a desired or close
to a desired stoichiometric ratio of the elements for at least the
elements of group IB and IIIA. The method includes coating a
substrate with the ink to form a precursor layer and processing the
precursor layer in a suitable atmosphere to form a dense film. The
dense film may be used in the formation of a semiconductor absorber
for a photovoltaic device. The film may comprise of a fused version
of the precursor layer which comprises of a plurality of individual
particles which are unfused.
In yet another embodiment of the present invention, a material is
provided that comprises of a plurality of nanoflakes having a
material composition containing at least one element from Groups
IB, IIIA, and/or VIA. The nanoflakes are created by milling or size
reducing precursor particles characterized by a precursor
composition that provides sufficient ductility (better:
malleability, see later in patent) to form a planar shape from a
non-planar and/or planar starting shape when milled or size
reduced, and wherein overall amounts of elements from Groups IB,
IIIA and/or VIA contained in the precursor particles combined are
at a desired or close to a desired stoichiometric ratio of the
elements for at least the elements of groups IB and IIIA. In one
embodiment, planar includes those that particles that are wide in
two dimensions, thin in every other dimension. The milling may
transform substantially all of the precursor particles into
nanoflakes. Alternatively, the milling transforms at least 50% of
the precursor particles into nanoflakes. The milling may occur in
an oxygen-free atmosphere to create oxygen-free nanoflakes. The
milling may occur in an inert gas environment to create oxygen-free
nanoflakes. These non-spherical particles may be nanoflakes that
have its largest dimension (thickness and/or length and/or width)
greater than about 20 nm, since sizes smaller than that tend to
create less efficient solar cells. Milling can also be chilled and
occur at a temperature lower than room temperature to allow milling
of particles composed of low melting point material. In other
embodiments, milling may occur at room temperature. Alternatively,
milling may occur at temperatures greater than room temperature to
obtain the desired malleability of the material. In one embodiment
of the present invention, the material composition of the feedstock
particles preferably exhibits a malleability that allows non-planar
feedstock particles to be formed into substantially planar
nanoflakes at the appropriate temperature. In one embodiment, the
nanoflakes have at least one surface that is substantially
flat.
In a still further embodiment according to the present invention, a
solar cell is provided that comprises of a substrate, a back
electrode formed over the substrate, a p-type semiconductor thin
film formed over the back electrode, an n-type semiconductor thin
film formed so as to constitute a pn junction with the p-type
semiconductor thin film, and a transparent electrode formed over
the n-type semiconductor thin film. The p-type semiconductor thin
film results by processing a dense film formed from a plurality of
nanoflakes having a material composition containing at least one
element from Groups IB, IIIA, and/or VIA, wherein the resulting
film has a void volume of 26% or less. In one embodiment, this
number may be based on free volume of packed spheres of different
diameter to minimize void volume. In another embodiment of the
invention, the dense film has a void volume of about 30% or less.
In other embodiments, the void volume is about 20% or less. In
still other embodiments, the void volume is about 10% or less.
In another embodiment of the present invention, a method is
provided for forming a film by using particles with particular
properties. The properties may be based on interparticle size,
shape, composition, and morphology distribution. As a nonlimiting
example, the particles may be nanoflakes within a desired size
range. Within the nanoflakes, the morphology may include particles
that are amorphous, those that are crystalline, those that are more
crystalline than amorphous, and those that are more amorphous than
crystalline. The properties may also be based on interparticle
composition and morphology distribution. In one embodiment of the
present invention, it should be understood that the resulting
flakes have a morphology where the flakes are less crystalline than
the feedstock material from which the flakes are formed. Flakes are
particles with at least one substantially planar surface and may
include both nanoflakes and/or microflakes.
In yet another embodiment of the present invention, the method
comprises formulating an ink of particles wherein about 50% or more
of the particles (based on the total weight of all particles) are
flakes each containing at least one element from group IB, IIIA
and/or VIA and having a non-spherical, planar shape, wherein
overall amounts of elements from group IB, IIIA and/or VIA
contained in the ink are such that the ink has a desired
stoichiometric ratio of the elements. In another embodiment, the
term "50% or more" may be based on the number of particles versus
the total number of particles in the ink. In yet another
embodiment, at least about 75% or more of the particles (by weight
or by number) are nanoflakes. The method includes coating a
substrate with the ink to form a precursor layer and processing the
precursor layer in a suitable processing condition to form a film.
The film may be used in the formation of a semiconductor absorber
for a photovoltaic device. It should be understood that suitable
processing conditions may include, but are not limited to,
atmosphere composition, pressure, and/or temperature. In one
embodiment, substantially all of the particles are flakes with a
non-spherical, planar shape. In one embodiment, at least 95% of all
particles (based on weight of all particles combined) are flakes.
In another embodiment, at least 99% of all particles (based on
weight of all particles combined) are flakes. The flakes may be
comprised of nanoflakes. In other embodiments, the flakes may be
comprised of both microflakes and nanoflakes.
It should be understood that the planar shape of the nanoflakes may
provide a number of advantages. As a nonlimiting example, the
planar shape may create greater surface area contact between
adjacent nanoflakes that allows the dense film to form at a lower
temperature and/or shorter time as compared to a film made from a
precursor layer using an ink of spherical nanoparticles wherein the
nanoparticles have a substantially similar material composition and
the ink is otherwise substantially identical to the ink of the
present invention. The planar shape of the nanoflakes may also
create greater surface area contact between adjacent nanoflakes
that allows the dense film to form at an annealing temperature at
least 50 degrees C. less as compared to a film made from a
precursor layer using an ink of spherical nanoparticles that is
otherwise substantially identical to the ink of the present
invention.
The planar shape of the nanoflakes may create greater surface area
contact between adjacent nanoflakes relative to adjacent spherical
nanoparticles and thus promotes increased atomic intermixing as
compared to a film made from a precursor layer made from an ink of
the present invention. The planar shape of the nanoflakes creates a
higher packing density in the dense film as compared to a film made
from a precursor layer made from an ink of spherical nanoparticles
of the same composition that is otherwise substantially identical
to the ink of the present invention.
The planar shape of the nanoflakes may also create a packing
density of at least about 76% in the precursor layer. The planar
shape of the nanoflakes may create a packing density of at least
80% in the precursor layer. The planar shape of the nanoflakes may
create a packing density of at least 90% in the precursor layer.
The planar shape of the nanoflakes may create a packing density of
at least 95% in the precursor layer. Packing density may be
mass/volume, solids/volume, or non-voids/volume.
The planar shape of the nanoflakes results in grain sizes of at
least about 1 micron in the semiconductor absorber of a
photovoltaic device. The planar shape of the nanoflakes may results
in grain sizes of at least about 2.0 .mu.m in at least one
dimension in the semiconductor absorber of a photovoltaic device.
In other embodiments, the nanoflakes results in grain sizes of at
least about 1.0 .mu.m in at least one dimension in the
semiconductor absorber of a photovoltaic device. In still further
embodiments, the nanoflakes results in grain sizes of at least
about 0.5 .mu.m in at least one dimension in the semiconductor
absorber of a photovoltaic device. The planar shape of the
nanoflakes may result in grain sizes of at least about 0.3 .mu.m
wide in the semiconductor absorber of a photovoltaic device. In
other embodiments, the planar shape of the nanoflakes results in
grain sizes of at least about 0.3 .mu.m wide in the semiconductor
absorber of a photovoltaic device when the nanoflakes are formed
from one or more of the following: copper selenide, indium
selenide, or gallium selenide.
The planar shape of the nanoflakes provides a material property to
avoid rapid and/or preferential settling of the particles when
forming the precursor layer. The planar shape of the nanoflakes
provides a material property to avoid rapid and/or preferential
settling of nanoflakes having different material compositions, when
forming the precursor layer. The planar shape of the nanoflakes
provides a material property to avoid rapid and/or preferential
settling of nanoflakes having different particle sizes, when
forming the precursor layer. The planar shape of the nanoflakes
provides a material property to avoid grouping of nanoflakes in the
ink and thus enables a finely dispersed solution of nanoflakes.
The planar shape of the nanoflakes provides a material property to
avoid undesired grouping of nanoflakes of a particular class in the
ink and thus enables an evenly dispersed solution of nanoflakes.
The planar shape of the nanoflakes provides a material property to
avoid undesired grouping of nanoflakes of a specific material
composition in the ink and thus enables an evenly dispersed
solution of nanoflakes. The planar shape of the nanoflakes provides
a material property to avoid grouping of nanoflakes of a specific
phase separation in the precursor layer resulting from the ink. The
nanoflakes have a material property that reduces surface tension at
interface between nanoflakes in the ink and a carrier fluid to
improve dispersion quality.
In one embodiment of the present invention, the ink may be
formulated by use of a low molecular weight dispersing agent whose
inclusion is effective due to favorable interaction of the
dispersing agent with the planar shape of the nanoflakes. The ink
may be formulated by use of a carrier liquid and without a
dispersing agent. The planar shape of the nanoflakes provides a
material property to allow for a more even distribution of group
IIIA material throughout in the dense film as compared to a film
made from a precursor layer made from an ink of spherical
nanoparticles that is otherwise substantially identical to the ink
of the present invention. In another embodiment, the nanoflakes may
be of random planar shape and/or a random size distribution.
The nanoflakes may be of non-random planar shape and/or a
non-random size distribution. The nanoflakes may each have a length
and/or largest lateral dimension less than about 500 nanometers and
greater than about 20 nanometers. The nanoflakes may each have a
length and/or largest lateral dimension between about 300
nanometers and 50 nanometers. The nanoflakes may each have a
thickness of about 100 nm or less. In other embodiments, the
lengths of the planar nanoflakes are about 500 nm to about 1 nm. As
a nonlimiting example, the nanoflakes may have lengths and/or
largest lateral dimension of about 300 nm to about 10 nm. In other
embodiments, the nanoflakes may be of thickness in the range of
about 200 nm to about 20 nm. In another embodiment, these
nanoflakes may be of thickness in the range of about 100 nm to
about 10 nm. In one embodiment, these nanoflakes may be of
thickness in the range of about 200 nm to about 20 nm. The
nanoflakes may each have a thickness less than about 50 nm. The
nanoflakes thicknesses of less than about 20 nm. The nanoflakes may
have an aspect ratio of at least about 5 or more. The nanoflakes
may have an aspect ratio of at least about 10 or more. The
nanoflakes have an aspect ratio of at least about 15 or more.
The nanoflakes may be oxygen free. The nanoflakes may be a single
metal. The nanoflakes may be an alloy of group IB, IIIA elements.
The nanoflakes may be a binary alloy of group IB, IIIA elements.
The nanoflakes may be a ternary alloy of group IB, IIIA elements.
The nanoflakes may be a quaternary alloy of group IB, IIIA, and/or
VIA elements. The nanoflakes may be group IB-chalcogenide particles
and/or group IIIA-chalcogenide particles. Again, the particles may
be particles that are substantially oxygen-free, which may include
those that include less than about 1 wt % of oxygen. Other
embodiments may use materials with less than about 5 wt % of
oxygen. Still other embodiments may use materials with less than
about 3 wt % oxygen. Still other embodiments may use materials with
less than about 2 wt % oxygen. Still other embodiments may use
materials with less than about 0.5 wt % oxygen. Still other
embodiments may use materials with less than about 0.1 wt %
oxygen.
In one embodiment of the present invention, the coating step occurs
at room temperature. The coating step may occur at atmospheric
pressure. The method may further comprise depositing a film of
selenium onto the dense film. The processing step may be
accelerated via thermal processing techniques using at least one of
the following: pulsed thermal processing, exposure to a laser beam,
or heating via IR lamps, and/or similar or related methods. The
processing may comprise of heating the precursor layer to a
temperature greater than about 375.degree. C. but less than a
melting temperature of the substrate for a period of less than 15
minutes. The processing may comprise of heating the precursor layer
to a temperature greater than about 375.degree. C. but less than a
melting temperature of the substrate for a period of 1 minute or
less.
In another embodiment of the present invention, processing may
comprise of heating the precursor layer to an annealing temperature
but less than a melting temperature of the substrate for a period
of 1 minute or less. The suitable atmosphere may comprise of a
hydrogen atmosphere. In another embodiment of the present
invention, the suitable atmosphere comprises a nitrogen atmosphere.
In yet another embodiment, the suitable atmosphere comprises a
carbon monoxide atmosphere. The suitable atmosphere may be
comprised of an atmosphere having less than about 10% hydrogen. The
suitable atmosphere may be comprised of an atmosphere containing
selenium. The suitable atmosphere may be comprised of an atmosphere
of a non-oxygen chalcogen. In one embodiment of the present
invention, the suitable atmosphere may comprise of a selenium
atmosphere providing a partial pressure greater than or equal to
vapor pressure of selenium in the precursor layer. In another
embodiment, the suitable atmosphere may comprise of a non-oxygen
atmosphere containing chalcogen vapor at a partial pressure of the
chalcogen greater than or equal to a vapor pressure of the
chalcogen at the processing temperature and processing pressure to
minimize loss of chalcogen from the precursor layer, wherein the
processing pressure is a non-vacuum pressure. In yet another
embodiment, the chalcogen atmosphere may be used with one or more
binary chalcogenides (in any shape or form) at a partial pressure
of the chalcogen greater than or equal to a vapor pressure of the
chalcogen at the processing temperature and processing pressure to
minimize loss of chalcogen from the precursor layer, wherein
optionally, the processing pressure is a non-vacuum pressure.
In yet another embodiment of the present invention, prior to the
step of formulating the ink, there is included a step of creating
nanoflakes. The creating step comprises of providing feedstock
particles containing at least one element of groups IB, IIIA,
and/or VIA, wherein substantially each of the feedstock particles
have a composition of sufficient malleability to form a planar
shape from a non-planar starting shape and milling the feedstock
particles to reduce at least the thickness of each particle to less
than 100 nm. The milling step may occur in an oxygen free
atmosphere to create substantially oxygen-free nanoflakes. The
substrate may be a rigid substrate. The substrate may be a flexible
substrate. The substrate may be an aluminum foil substrate or a
polymer substrate, which is a flexible substrate in a roll-to-roll
manner (either continuous or segmented) using a commercially
available web coating system. The rigid substrate may be comprised
of at least one material selected from the group: glass, solar
glass, low-iron glass, green glass, soda-lime glass, steel,
stainless steel, aluminum, polymer, ceramic, metal plates,
metallized ceramic plates, metallized polymer plates, metallized
glass plates, and/or any single or multiple combination of the
aforementioned. The substrate may be at different temperatures than
the precursor layer during processing. This may enable the
substrate to use materials that would melt or become unstable at
the processing temperature of the precursor layer. Optionally, this
may involve actively cooling the substrate during processing.
In yet another embodiment of the present invention, a method is
provided for formulating an ink of particles wherein a majority of
the particles are nanoflakes each containing at least one element
from group IB, IIIA and/or VIA and having a non-spherical, planar
shape, wherein the overall amounts of the elements from group IB,
IIIA and/or VIA contained in the ink are such that the ink has a
desired stoichiometric ratio of the elements. The method may
include coating a substrate with the ink to form a precursor layer,
and processing the precursor layer to form a dense film for growth
of a semiconductor absorber of a photovoltaic device. In one
embodiment, at least 60% of the particles (by weight or by number)
are nanoflakes. In yet another embodiment, at least 70% of the
particles (by weight or by number) are nanoflakes. In another
embodiment, at least 80% of the particles (by weight or by number)
are nanoflakes. In another embodiment, at least 90% of the
particles (by weight or by number) are nanoflakes. In another
embodiment, at least 95% of the particles (by weight or by number)
are nanoflakes.
In another embodiment, a liquid ink may be made using one or more
liquid metals. For example, an ink may be made starting with a
liquid and/or molten mixture of Gallium and/or Indium. Copper
nanoparticles may then be added to the mixture, which may then be
used as the ink/paste. Copper nanoparticles are available
commercially. Alternatively, the temperature of the Cu--Ga--In
mixture may be adjusted (e.g. cooled) until a solid forms. The
solid may be ground at that temperature until small nanoparticles
(e.g., less than 5 nm) are present. Selenium may be added to the
ink and/or a film formed from the ink by exposure to selenium
vapor, e.g., before, during, or after annealing.
In yet another embodiment of the present invention, a process is
described comprising of formulating a dispersion of solid and/or
liquid particles comprising group IB and/or IIIA elements, and,
optionally, at least one group VIA element. The process includes
depositing the dispersion onto a substrate to form a layer on the
substrate and reacting the layer in a suitable atmosphere to form a
film. In this process, at least one set of the particles are
inter-metallic particles containing at least one group IB-IIIA
inter-metallic phase. Any of the above embodiments may use flakes
(micro flakes or nanoflakes) that contain an inter-metallic phase
as described herein.
In yet another embodiment of the present invention, a composition
is provided comprised of a plurality of particles comprising group
IB and/or IIIA elements, and, optionally, at least one group VIA
element. At least one set of the particles contains at least one
group IB-IIIA inter-metallic alloy phase.
In a still further embodiment of the present invention, the method
may include formulating a dispersion of particles comprising group
IB and/or IIIA elements, and, optionally, at least one group VIA
element. The method may include depositing the dispersion onto a
substrate to form a layer on the substrate and reacting the layer
in a suitable atmosphere to form a film. At least one set of the
particles contain a group IB-poor, group IB-IIIA alloy phase. In
some embodiments, group IB-poor particles contribute less than
about 50 molar percent of group IB elements found in all of the
particles. The group IB-poor, group IB-IIIA alloy phase particles
may be a sole source of one of the group IIIA elements. The group
IB-poor, group IB-IIIA alloy phase particles may contain an
inter-metallic phase and may be a sole source of one of the group
IIIA elements. The group IB-poor, group IB-IIIA alloy phase
particles may contain an inter-metallic phase and are a sole source
of one of the group IIIA elements. The group IB-poor, group IB-IIIA
alloy phase particles may be Cu.sub.1In.sub.2 particles and are a
sole source of indium in the material.
It should be understood that for any of the foregoing the film
and/or final compound may include a group IB-IIIA-VIA compound. The
reacting step may comprise of heating the layer in the suitable
atmosphere. The depositing step may include coating the substrate
with the dispersion. At least one set of the particles in the
dispersion may be in the form of nanoglobules. At least one set of
the particles in the dispersion may be in the form of nanoglobules
and contain at least one group IIIA element. At least one set of
the particles in the dispersion may be in the form of nanoglobules
comprising of a group IIIA element in elemental form. In some
embodiments of the present invention, the inter-metallic phase is
not a terminal solid solution phase. In some embodiments of the
present invention, the inter-metallic phase is not a solid solution
phase. The inter-metallic particles may contribute less than about
50 molar percent of group IB elements found in all of the
particles. The inter-metallic particles may contribute less than
about 50 molar percent of group IIIA elements found in all of the
particles. The inter-metallic particles may contribute less than
about 50 molar percent of the group IB elements and less than about
50 molar percent of the group IIIA elements in the dispersion
deposited on the substrate. The inter-metallic particles may
contribute less than about 50 molar percent of the group IB
elements and more than about 50 molar percent of the group IIIA
elements in the dispersion deposited on the substrate. The
inter-metallic particles may contribute more than about 50 molar
percent of the group IB elements and less than about 50 molar
percent of the group IIIA elements in the dispersion deposited on
the substrate. The molar percent for any of the foregoing may be
based on a total molar mass of the elements in all particles
present in the dispersion. In some embodiments, at least some of
the particles have a platelet shape. In some embodiments, a
majority of the particles have a platelet shape. In other
embodiments, substantially all of the particles have a platelet
shape.
For any of the foregoing embodiments, an inter-metallic material
for use with the present invention is a binary material. The
inter-metallic material may be a ternary material. The
inter-metallic material may comprise of Cu.sub.1In.sub.2. The
inter-metallic material may be comprised of a composition in a
.delta. phase of Cu.sub.1In.sub.2. The inter-metallic material may
be comprised of a composition in between a .delta. phase of
Cu.sub.1In.sub.2 and a phase defined by Cu16In9. The inter-metallic
material may be comprised of Cu.sub.1Ga.sub.2. The inter-metallic
material may be comprised of an intermediate solid-solution of
Cu.sub.1Ga.sub.2. The inter-metallic material may be comprised of
Cu.sub.68Ga.sub.38. The inter-metallic material may be comprised of
Cu.sub.70Ga.sub.30. The inter-metallic material may be comprised of
Cu.sub.75Ga.sub.25. The inter-metallic material may be comprised of
a composition of Cu--Ga of a phase in between the terminal
solid-solution and an intermediate solid-solution next to it. The
inter-metallic may be comprised of a composition of Cu--Ga in a
.gamma..sub.1 phase (about 31.8 to about 39.8 wt % Ga). The
inter-metallic may be comprised of a composition of Cu--Ga in a
.gamma..sub.2 phase (about 36.0 to about 39.9 wt % Ga). The
inter-metallic may be comprised of a composition of Cu--Ga in a
.gamma..sub.3 phase (about 39.7 to about -44.9 wt % Ga). The
inter-metallic may be comprised of a composition of Cu--Ga in a
phase between .gamma..sub.2 and .gamma..sub.3. The inter-metallic
may be comprised of a composition of Cu--Ga in a phase between the
terminal solid solution and .gamma..sub.1. The inter-metallic may
be comprised of a composition of Cu--Ga in a .theta. phase (about
66.7 to about 68.7 wt % Ga). The inter-metallic material may be
comprised of Cu-rich Cu--Ga. Gallium may be incorporated as a group
IIIA element in the form of a suspension of nanoglobules.
Nanoglobules of gallium may be formed by creating an emulsion of
liquid gallium in a solution. Gallium nanoglobules may be created
by being quenched below room temperature.
A process according to the any of the foregoing embodiments of the
present invention may include maintaining or enhancing a dispersion
of liquid gallium in solution by stirring, mechanical means,
electromagnetic means, ultrasonic means, and/or the addition of
dispersants and/or emulsifiers. The process may include adding a
mixture of one or more elemental particles selected from: aluminum,
tellurium, or sulfur. The suitable atmosphere may contain selenium,
sulfur, tellurium, H.sub.2, CO, H.sub.2Se, H.sub.2S, Ar, N.sub.2 or
combinations or mixture thereof. The suitable atmosphere may
contain at least one of the following: H.sub.2, CO, Ar, and
N.sub.2. One or more classes of the particles may be doped with one
or more inorganic materials. Optionally, one or more classes of the
particles are doped with one or more inorganic materials chosen
from the group of aluminum (Al), sulfur (S), sodium (Na), potassium
(K), or lithium (Li).
Optionally, embodiments of the present invention may include having
a copper source that does not immediately alloy with In, and/or Ga.
One option would be to use (slightly) oxidized copper. The other
option would be to use CuxSey. Note that for the (slightly)
oxidized copper approach, a reducing step may be desired.
Basically, if elemental copper is used in liquid In and/or Ga,
speed of the process between ink preparation and coating should be
sufficient so that the particles have not grown to a size that will
result in thickness non-uniform coatings.
It should be understood that the temperature range may that of the
substrate only since that is typically the only one that should not
be heated above its melting point. This holds for the lowest
melting material in the substrate, being Al and other suitable
substrates.
A further understanding of the nature and advantages of the
invention will become apparent by reference to the remaining
portions of the specification and drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIGS. 1A-1D are schematic cross-sectional diagrams illustrating
fabrication of a film according to an embodiment of the present
invention.
FIGS. 2A and 2B are magnified side view and magnified top-down view
of nanoflakes according to one embodiment of the present
invention.
FIG. 2C is a magnified top-down view of microflakes according to
one embodiment of the present invention.
FIG. 3 shows a schematic of a milling system according to the one
embodiment of the present invention.
FIG. 4 shows a schematic of a roll-to-roll manufacturing system
according to the one embodiment of the present invention.
FIG. 5 shows a cross-sectional view of a photovoltaic device
according to one embodiment of the present invention.
FIG. 6 shows a flowchart of a method according to one embodiment of
the present invention.
FIG. 7 shows a module having a plurality of photovoltaic devices
according to one embodiment of the present invention.
FIGS. 8A-8C show a schematic view of planar particles used with
spherical particles according to one embodiment of the present
invention.
FIGS. 9A-9D show a schematic view of a discrete printed layer of a
chalcogen source used with planar particles according to one
embodiment of the present invention.
FIG. 9E shows particles having a shell of chalcogen according to
one embodiment of the present invention.
FIGS. 10A-10C show the use of chalcogenide planar particles
according to one embodiment of the present invention.
FIGS. 11A-10C show a nucleation layer according to one embodiment
of the present invention.
FIGS. 12A-12B show schematics of devices which may be used to
create a nucleation layer through a thermal gradient.
FIGS. 13A-13F show the use of a chemical gradient according to one
embodiment of the present invention.
FIG. 14 shows a roll-to-roll system according to the present
invention.
FIGS. 15A-15D show a schematic of a system using a chalcogen
material according to one embodiment of the present invention.
FIG. 15E shows a schematic of a system using a chalcogen vapor
environment according to one embodiment of the present
invention.
FIG. 15F shows a schematic of a system using a chalcogen vapor
environment according to one embodiment of the present
invention.
FIG. 15G shows a schematic of a system using a chalcogen vapor
environment according to one embodiment of the present
invention.
FIG. 16A shows one embodiment of a system for use with rigid
substrates according to one embodiment of the present
invention.
FIG. 16B shows one embodiment of a system for use with rigid
substrates according to one embodiment of the present
invention.
FIGS. 17-19 show the use of inter-metallic material to form a film
according to embodiments of the present invention.
FIG. 20 is a cross-sectional view showing the use of multiple
layers to form a film according to embodiments of the present
invention.
FIG. 21 shows feedstock material being processed according to
embodiments of the present invention.
FIGS. 22A and 22B show features of flakes according to embodiments
of the present invention.
FIGS. 23A and 23B show features of platelets.
DESCRIPTION OF THE SPECIFIC EMBODIMENTS
It is to be understood that both the foregoing general description
and the following detailed description are exemplary and
explanatory only and are not restrictive of the invention, as
claimed. It may be noted that, as used in the specification and the
appended claims, the singular forms "a", "an" and "the" include
plural referents unless the context clearly dictates otherwise.
Thus, for example, reference to "a material" may include mixtures
of materials, reference to "a compound" may include multiple
compounds, and the like. References cited herein are hereby
incorporated by reference in their entirety, except to the extent
that they conflict with teachings explicitly set forth in this
specification.
In this specification and in the claims which follow, reference
will be made to a number of terms which shall be defined to have
the following meanings:
"Optional" or "optionally" means that the subsequently described
circumstance may or may not occur, so that the description includes
instances where the circumstance occurs and instances where it does
not. For example, if a device optionally contains a feature for a
barrier film, this means that the barrier film feature may or may
not be present, and, thus, the description includes both structures
wherein a device possesses the barrier film feature and structures
wherein the barrier film feature is not present.
According to embodiments of the present invention, an active layer
for a photovoltaic device may be fabricated by first formulating an
ink of non-spherical particles each containing at least one element
from groups IB, IIIA and/or VIA, coating a substrate with the ink
to form a precursor layer, and heating the precursor layer to form
a dense film. Optionally, it should be understood that in some
embodiments, densification of the precursor layer may not be
needed, particularly if the precursor materials are oxygen-free
and/or substantially oxygen-free. Thus, the heating step may
optionally be skipped if the particles are processed air-free and
are oxygen-free. In a preferred embodiment, the non-spherical
particles are nanoflakes that are substantially planar in shape.
The dense film may be processed in a suitable atmosphere to form a
group IB-IIIA-VIA compound. The resulting group IB-IIIA-VIA
compound is preferably a compound of Cu, In, Ga and selenium (Se)
or sulfur S of the form
CuIn.sub.(1-x)Ga.sub.xS.sub.2(1-y)Se.sub.2y, where
0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1. It should also be
understood that the resulting group IB-IIIA-VIA compound may be a
compound of Cu, In, Ga and selenium (Se) or sulfur S of the form
Cu.sub.zIn.sub.(1-x)Ga.sub.xS.sub.2(1-y)Se.sub.2y, where
0.5.ltoreq.z.ltoreq.1.5, 0.ltoreq.x.ltoreq.1.0 and
0.ltoreq.y.ltoreq.1.0.
It should be understood that group IB, IIIA, and VIA elements other
than Cu, In, Ga, Se, and S may be included in the description of
the IB-IIIA-VIA materials described herein, and that the use of a
hyphen ("--" e.g., in Cu--Se or Cu--In--Se) does not indicate a
compound, but rather indicates a coexisting mixture of the elements
joined by the hyphen. It is also understood that group IB is
sometimes referred to as group 11, group IIIA is sometimes referred
to as group 13 and group VIA is sometimes referred to as group 16.
Furthermore, elements of group VIA (16) are sometimes referred to
as chalcogens. Where several elements can be combined with or
substituted for each other, such as In and Ga, or Se, and S, in
embodiments of the present invention, it is not uncommon in this
art to include in a set of parentheses those elements that can be
combined or interchanged, such as (In, Ga) or (Se, S). The
descriptions in this specification sometimes use this convenience.
Finally, also for convenience, the elements are discussed with
their commonly accepted chemical symbols. Group IB elements
suitable for use in the method of this invention include copper
(Cu), silver (Ag), and gold (Au). Preferably the group IB element
is copper (Cu). Group IIIA elements suitable for use in the method
of this invention include gallium (Ga), indium (In), aluminum (Al),
and thallium (Tl). Preferably the group IIIA element is gallium
(Ga) or indium (In). Group VIA elements of interest include
selenium (Se), sulfur (S), and tellurium (Te), and preferably the
group VIA element is either Se and/or S. It should be understood
that mixtures such as, but not limited to, alloys, solid solutions,
and compounds of any of the above can also be used.
Method of Forming a Film
Referring now to FIG. 1, one method of forming a semiconductor film
according to the present invention will now be described. It should
be understood that the present embodiment of the invention uses
non-vacuum techniques to form the semiconductor film. Other
embodiments, however, may form the film under a vacuum environment,
and the present invention using non-spherical particles is not
limited to only non-vacuum coating techniques.
As seen in FIG. 1A, a substrate 102 is provided on which the
precursor layer 106 (see FIG. 1B) will be formed. By way of
non-limiting example, the substrate 102 may be made of a metal such
as aluminum. In other embodiments, metals such as, but not limited
to, stainless steel, molybdenum, titanium, copper, metallized
plastic films, or combinations of the foregoing may be used as the
substrate 102. Alternative substrates include but are not limited
to ceramics, glasses, and the like. Any of these substrates may be
in the form of foils, sheets, rolls, the like, or combinations
thereof. Depending on the material of the substrate 102, it may be
useful to coat a surface of the substrate 102 with a contact layer
104 to promote electrical contact between the substrate 102 and the
absorber layer that is to be formed on it, and/or to limit
reactivity of the substrate 102 in subsequent steps, and/or to
promote higher quality absorber growth. As a nonlimiting example,
when the substrate 102 is made of aluminum, the contact layer 104
may be but is not limited to a layer of molybdenum. For the
purposes of the present discussion, the contact layer 104 may be
regarded as being part of the substrate. As such, any discussion of
forming or disposing a material or layer of material on the
substrate 102 includes disposing or forming such material or layer
on the contact layer 104, if one is used. Optionally, other layers
of materials may also be used with the contact layer 104 for
insulation or other purposes and still considered part of the
substrate 102. It should be understood that the contact layer 104
may comprise of more than one type or more than one discrete layer
of material. Optionally, some embodiments may use any one and/or
combinations of the following for the contact layer: a copper,
aluminum, chromium, molybdenum, vanadium, etc. and/or iron-cobalt
alloys. Optionally, a diffusion barrier layer 103 (shown in
phantom) may be included and layer 103 may be electrically
conductive or electrically non-conductive. As non-limiting
examples, the layer 103 may be composed of any of a variety of
materials, including but not limited to chromium, vanadium,
tungsten, or compounds such as nitrides (including tantalum
nitride, tungsten nitride, titanium nitride, silicon nitride,
zirconium nitride, and/or hafnium nitride), oxides (including Al2O3
or SiO2), carbides (including SiC), and/or any single or multiple
combination of the foregoing. Optionally, a diffusion barrier layer
105 (shown in phantom) may be on the underside of substrate 102 and
be comprised of a material such as but not limited to chromium,
vanadium, tungsten, or compounds such as nitrides (including
tantalum nitride, tungsten nitride, titanium nitride, silicon
nitride, zirconium nitride, and/or hafnium nitride), oxides
(including Al2O3 or SiO2), carbides (including SiC), and/or any
single or multiple combination of the foregoing. The layers 103
and/or 105 may be adapted for use with any of the embodiments
described herein.
Referring now to FIG. 1B, a precursor layer 106 is formed over the
substrate 102 by coating the substrate 102 with a dispersion such
as but not limited to an ink. As one nonlimiting example, the ink
may comprise of a carrier liquid mixed with the nanoflakes 108 and
has a rheology that allows the ink to be coatable over the
substrate 102. In on embodiment, the present invention may use dry
powder mixed with the vehicle and sonicated before coating.
Optionally, the inks may already formulated coming right from the
mill. In the case of mixing, a plurality of flake compositions, the
product may be mixed from various mills. This mixing could be
sonicated but other forms of agitation and/or another mill may be
used. The ink used to form the precursor layer 106 may contain
non-spherical particles 108 such as but not limited to nanoflakes.
It should also be understood that the ink may optionally use both
non-spherical and spherical particles in any of a variety of
relative proportions.
FIG. 1B includes a close-up view of the nanoflakes 108 in the
precursor layer 106, as seen in the enlarged image. Nanoflakes have
non-spherical shapes and are substantially planar on at least one
side. A more detailed view of one embodiment of the nanoflakes 108
can be found in FIGS. 2A and 2B. Nanoflakes may be defined as
particles having at least one substantially planar surface with a
length and/or largest lateral dimension of about 500 nm or less and
the particles has an aspect ratio of about 2 or more. In one
embodiment, the length and/or largest lateral dimension is between
about 400 nm and about 1 nm. In another embodiment, the length
and/or largest lateral dimension is between about 300 nm and about
10 nm. In another embodiment, the length and/or largest lateral
dimension is between about 200 nm and about 20 nm. In another
embodiment, the length and/or largest lateral dimension is between
about 500 nm and about 200 nm. In other embodiments, the nanoflake
is a substantially planar structure with thickness of between about
10 and about 100 nm and lengths between about 20 nm and 500 nm.
It should be understood that different types of nanoflakes 108 may
be used to form the precursor layer 106. In one nonlimiting
example, the nanoflakes are elemental nanoflakes, i.e., nanoflakes
having only a single atomic species. The nanoflakes may be single
metal particles of Cu, Ga, In or Se. Some inks may have only one
type of nanoflakes. Other inks may have two or more types of
nanoflakes which may differ in material composition and/or other
quality such as but not limited to shape, size, interior
architecture (e.g. a central core surrounded by one or more shell
layers), exterior coating (be more explanatory on this one, maybe
use words like core-shell), or the like. In one embodiment, the ink
used for precursor layer 106 may contain nanoflakes comprising one
or more group IB elements and nanoflakes comprising one or more
different group IIIA elements. Preferably, the precursor layer
(106) contains copper, indium and gallium. In another embodiment,
the precursor layer 106 may be an oxygen-free layer containing
copper, indium and gallium. Optionally, the ratio of elements in
the precursor layer may be such that the layer, when processed,
forms a compound of CuIn.sub.xGa.sub.1-x, where
0.ltoreq.x.ltoreq.1. Those of skill in the art will recognize that
other group IB elements may be substituted for Cu and other group
IIIA elements may be substituted for In and Ga. Optionally, the
precursor may contain Se as well, such as but not limited to
Cu--In--Ga--Se plates. This is feasible if the precursor is
oxygen-free and densification is not needed. In still further
embodiments, the precursor material may contain nanoflakes of group
IB, IIIA, and VIA elements. In one nonlimiting example, the
precursor may contain Cu--In--Ga--Se nanoflakes, which would be
particularly advantageous if the nanoflakes are formed air free and
densification prior to film formation is not needed.
Optionally, the nanoflakes 108 in the ink may be alloy nanoflakes.
In one nonlimiting example, the nanoflakes may be binary alloy
nanoflakes such as Cu--In, In--Ga, or Cu--Ga. Alternatively, the
nanoflakes may be a binary alloy of group IB, IIIA elements, a
binary alloy of Group IB, VIA elements, and/or a binary alloy of
group IIIA, VIA elements. In other embodiments, the particles may
be a ternary alloy of group IB, IIIA, and/or VIA elements. For
example, the particles may be ternary alloy particles of any of the
above elements such as but not limited to Cu--In--Ga. In other
embodiments, the ink may contain particles that are a quaternary
alloy of group IB, IIIA, and/or VIA elements. Some embodiments may
have quaternary or multi-nary nanoflakes. The ink may also combine
nanoflakes of different classes such as but not limited to
elemental nanoflakes with alloy nanoflakes or the like. In one
embodiment, the nanoflakes used to form the precursor layer 106
preferably contains no oxygen other than those amounts unavoidably
present as impurities. Optionally, the nanoflakes contain less than
about 0.1 wt % of oxygen. In other embodiments, the nanoflakes
contain less than about 0.5 wt % of oxygen. In still further
embodiments, the nanoflakes contain less than about 1.0 wt % of
oxygen. In yet another embodiment, the nanoflakes contain less than
about 3.0 wt % of oxygen. In other embodiments, the nanoflakes
contain less than about 5.0 wt % of oxygen.
Optionally, the nanoflakes 108 in the ink may be chalcogenide
particles, such as but not limited to, a group IB or group IIIA
selenide. In one nonlimiting example, the nanoflakes may be a group
IB-chalcogenide formed with one or more elements of group IB
(new-style: group 11), e.g., copper (Cu), silver (Ag), and gold
(Au). Examples include, but are not limited to, Cu.sub.xSe.sub.y,
wherein x is in the range of about 1 to 10 and y is in the range of
about 1 to 10. In some embodiments of the present invention,
x<y. Alternatively, some embodiments may have selenides that are
more selenium rich, such as but not limited to, Cu.sub.xSe.sub.y
(where x>1). This may provide an increased source of selenium as
discussed in commonly assigned, co-pending U.S. patent application
Ser. No. 11/243,522 filed on Feb. 23, 2006 and fully incorporated
herein by reference. In another nonlimiting example, the nanoflakes
may be a group IIIA-chalcogenide formed with one or more elements
of group IIIA (new style: group 16), e.g., aluminum (Al), indium
(In), gallium (Ga), and thallium (Tl). Examples include
In.sub.xSe.sub.y and Ga.sub.xSe.sub.y wherein x is in the range of
about 1 to about 10 and y is in the range of about 1 to about 10.
Still further, the nanoflakes may be a Group IB-IIIA-chalcogenide
compound of one or more group IB elements, one or more group IIIA
elements and one or more chalcogens. Examples include
CuInGa--Se.sub.2. Other embodiments may replace the selenide
component with another group VIA element such as but not limited to
sulfur, or combinations of multiple group VIA elements such as both
sulfur and selenium.
It should be understood that the ink used in the present invention
may include more than one type of chalcogenide nanoflakes. For
example, some may include nanoflakes from both group
IB-chalcogenide(s) and group IIIA-chalcogenide(s). Others may
include nanoflakes from different group IB-chalcogenides with
different stoichiometric ratios. Others may include nanoflakes from
different group IIIA-chalcogenides with different stoichiometric
ratios.
Optionally, the nanoflakes 108 in the ink may also be particles of
at least one solid solution. In one nonlimiting example, the
nano-powder may contain copper-gallium solid solution particles,
and at least one of indium particles, indium-gallium solid-solution
particles, copper-indium solid solution particles, and copper
particles. Alternatively, the nano-powder may contain copper
particles and indium-gallium solid-solution particles.
One of the advantages of using nanoflake-based dispersions is that
it is possible to vary the concentration of the elements within the
precursor layer 106 from top to bottom by building the precursor
layer in a sequence of thinner sub-layers, which when combined,
form the precursor layer. The material may be deposited to form the
first, second layer or subsequent sub-layers, and reacted in at
least one suitable atmosphere to form the corresponding component
of the active layer. In other embodiment, the sub-layers may be
reacted as the sub-layers are deposited. The relative elemental
concentration of the nanoflakes that make up the ink for each
sub-layer may be varied. Thus, for example, the concentration of
gallium within the absorber layer may be varied as a function of
depth within the absorber layer. The precursor layer 106 (or
selected constituent sub-layers, if any) may be deposited using a
precursor material formulated with a controlled overall composition
having a desired stoichiometric ratio. More details on one method
of building a layer in a sequence of sub-layers can be found in
commonly assigned, copending U.S. patent application Ser. No.
11/243,492 filed Oct. 3, 2005 and fully incorporated herein by
reference for all purposes.
It should be understood that the film may be a layer made from a
dispersion, such as but not limited to an ink, paste, or paint. A
layer of the dispersion can be spread onto the substrate and
annealed to form the precursor layer 106. By way of example the
dispersion can be made by forming oxygen-free nanoflakes containing
elements from group IB, group IIIA and intermixing these nanoflakes
and adding them to a vehicle, which may encompass a carrier liquid
(such as but not limited to a solvent), and any additives.
Generally, an ink may be formed by dispersing the nanoflakes in a
vehicle containing a dispersant (e.g., a surfactant or polymer)
along with (optionally) some combination of other components
commonly used in making inks. In some embodiments of the present
invention, the ink is formulated without a dispersant or other
additives. The carrier liquid may be an aqueous (water-based) or
non-aqueous (organic) solvent. Other components include, without
limitation, dispersing agents, binders, emulsifiers, anti-foaming
agents, dryers, solvents, fillers, extenders, thickening agents,
film conditioners, anti-oxidants, flow and leveling agents,
plasticizers and preservatives. These components can be added in
various combinations to improve the film quality and optimize the
coating properties of the nanoflake dispersion. An alternative
method to mixing nanoflakes and subsequently preparing a dispersion
from these mixed nanoflakes would be to prepare separate
dispersions for each individual type of nanoflake and subsequently
mixing these dispersions. It should be understood that, due to
favorable interaction of the planar shape of the nanoflakes with
the carrier liquid, some embodiments of the ink may be formulated
by use of a carrier liquid and without a dispersing agent.
The precursor layer 106 from the dispersion may be formed on the
substrate 102 by any of a variety of solution-based coating
techniques including but not limited to wet coating, spray coating,
spin coating, doctor blade coating, contact printing, top feed
reverse printing, bottom feed reverse printing, nozzle feed reverse
printing, gravure printing, microgravure printing, reverse
microgravure printing, comma direct printing, roller coating, slot
die coating, meyerbar coating, lip direct coating, dual lip direct
coating, capillary coating, ink-jet printing, jet deposition, spray
deposition, and the like, as well as combinations of the above
and/or related technologies. The foregoing may apply to any
embodiments herein, regardless of particle size or shape.
In some embodiments, extra chalcogen, alloys particles, or
elemental particles, e.g., micron- or sub-micron-sized chalcogen
powder may be mixed into the dispersion containing the nanoflakes
so that the nanoflakes and extra chalcogen are deposited at the
same time. Alternatively the chalcogen powder may be deposited on
the substrate in a separate solution-based coating step before or
after depositing the dispersion containing the nanoflakes. In other
embodiment, group IIIA elemental material such as but not limited
to gallium droplets may be mixed with the flakes. This is more
fully described in commonly assigned, copending U.S. patent
application Ser. No. 11/243,522 filed on Feb. 23, 2006 and fully
incorporated herein by reference. This may create an additional
layer 107 (shown in phantom in FIG. 1C). Optionally, additional
chalcogen may be added by any combination of (1) any chalcogen
source that can be solution-deposited, e.g. a Se or S nano- or
micron-sized powder mixed into the precursor layers or deposited as
a separate layer, (2) chalcogen (e.g., Se or S) evaporation, (3) an
H.sub.2Se (H.sub.2S) atmosphere, (4) a chalcogen (e.g., Se or S)
atmosphere, (5) an H.sub.2 atmosphere, (6) an organo-selenium
atmosphere, e.g. diethylselenide or another organo-metallic
material, (7) another reducing atmosphere, e.g. CO, and a (8) heat
treatment. The stoichiometric ratio of nanoflakes to extra
chalcogen, given as Se/(Cu+In+Ga+Se) may be in the range of about 0
to about 1000.
Note that the solution-based deposition of the proposed mixtures of
nanoflakes does not necessarily have to be performed by depositing
these mixtures in a single step. In some embodiments of the present
invention, the coating step may be performed by sequentially
depositing nanoflake dispersions having different compositions of
IB-, IIIA- and chalcogen-based particulates in two or more steps.
For example, the method may be to first deposit a dispersion
containing an indium selenide nanoflake (e.g. with an In-to-Se
ratio of .about.1), and subsequently deposit a dispersion of a
copper selenide nanoflake (e.g. with a Cu-to-Se ratio of .about.1)
and a gallium selenide nanoflake (e.g. with a Ga-to-Se ratio of
.about.1) followed optionally by depositing a dispersion of Se.
This would result in a stack of three solution-based deposited
layers, which may be heated together. Alternatively, each layer may
be heated or sintered before depositing the next layer. A number of
different sequences are possible. For example, a layer of
In.sub.xGa.sub.ySe.sub.z with x.gtoreq.0 (larger than or equal to
zero), y.gtoreq.0 (larger than or equal to zero), and z.gtoreq.0
(larger than or equal to zero), may be formed as described above on
top of a uniform, dense layer of Cu.sub.wIn.sub.xGa.sub.y with
w.gtoreq.0 (larger than or equal to zero), x.gtoreq.0 (larger than
or equal to zero), and y.gtoreq.0 (larger than or equal to zero),
and subsequently converting (heating) the two layers into CIGS.
Alternatively a layer of Cu.sub.wIn.sub.xGa.sub.y may be formed on
top of a uniform, dense layer of In.sub.xGa.sub.ySe.sub.z and
subsequently converting (heating) the two layers into CIGS.
In alternative embodiments, nanoflake-based dispersions as
described above may further include elemental IB, and/or IIIA
nanoparticles (e.g., in metallic form). These nanoparticles may be
in nanoflake form, or optionally, take other shapes such as but not
limited to spherical, spheroidal, oblong, cubic, or other
non-planar shapes. These particles may also include emulsions,
molten materials, mixtures, and the like, in addition to solids.
For example Cu.sub.xIn.sub.yGa.sub.zSe.sub.u materials, with
u.gtoreq.0 (larger than zero), with x.gtoreq.0 (larger than or
equal to zero), y.gtoreq.0 (larger than or equal to zero), and
z.gtoreq.0 (larger than or equal to zero), may be combined with an
additional source of selenium (or other chalcogen) and metallic
gallium into a dispersion that is formed into a film on the
substrate by heating. Metallic gallium nanoparticles and/or
nanoglobules and/or nanodroplets may be formed, e.g., by initially
creating an emulsion of liquid gallium in a solution. Gallium metal
or gallium metal in a solvent with or without emulsifier may be
heated to liquefy the metal, which is then sonicated and/or
otherwise mechanically agitated in the presence of a solvent.
Agitation may be carried out either mechanically,
electromagnetically, or acoustically in the presence of a solvent
with or without a surfactant, dispersant, and/or emulsifier. The
gallium nanoglobules and/or nanodroplets can then be manipulated in
the form of a solid-particulate, by quenching in an environment
either at or below room temperature to convert the liquid gallium
nanoglobules into solid gallium nanoparticles. This technique is
described in detail in commonly-assigned U.S. patent application
Ser. No. 11/081,163 to Matthew R. Robinson and Martin R. Roscheisen
entitled "Metallic Dispersion", the entire disclosures of which are
incorporated herein by reference.
Note that the method may be optimized by using, prior to, during,
or after the solution deposition and/or heating of one or more of
the precursor layers, any combination of (1) any chalcogen source
that can be solution-deposited, e.g. a Se or S nanopowder mixed
into the precursor layers or deposited as a separate layer, (2)
chalcogen (e.g., Se or S) evaporation, (3) an H.sub.2Se (H.sub.2S)
atmosphere, (4) a chalcogen (e.g., Se or S) atmosphere, (5), an
organo-selenium containing atmosphere, e.g. diethylselenide (6) an
H.sub.2 atmosphere, (7) another reducing atmosphere, e.g. CO, (8) a
wet chemical reduction step, and a (9) heat treatment.
Referring now to FIG. 1C, the precursor layer 106 may then be
processed in a suitable atmosphere to form a film. The film may be
a dense film. In one embodiment, this involves heating the
precursor layer 106 to a temperature sufficient to convert the ink
(as-deposited ink. Note that solvent and possibly dispersant have
been removed by drying). The temperature may be between about
375.degree. C. and about 525.degree. C. (a safe temperature range
for processing on aluminum foil or high-temperature polymer
substrates). The processing may occur at various temperatures in
the range, such as but not limited to 450.degree. C. In other
embodiments, the temperature at the substrate may be between about
400.degree. C. and about 600.degree. C. at the level of the
precursor layer, but cooler at the substrate. The time duration of
the processing may also be reduced by at least about 20% if certain
steps are removed. The heating may occur over a range between about
four minutes to about ten minutes. In one embodiment, the
processing comprises heating the precursor layer to a temperature
greater than about 375.degree. C. but less than a melting
temperature of the substrate for a period of less than about 15
minutes. In another embodiment, the processing comprises heating
the precursor layer to a temperature greater than about 375.degree.
C. but less than a melting temperature of the substrate for a
period of about 1 minute or less. In a still further embodiment,
the processing comprises heating the precursor layer to an
annealing temperature but less than a melting temperature of the
substrate for a period of about 1 minute or less. The processing
step may also be accelerated via thermal processing techniques
using at least one of the following processes: pulsed thermal
processing, exposure to laser beams, or heating via IR lamps,
and/or similar or related processes.
The atmosphere associated with the annealing step in FIG. 1C may
also be varied. In one embodiment, the suitable atmosphere
comprises an atmosphere containing more than about 10% hydrogen. In
another embodiment the suitable atmosphere comprises a carbon
monoxide atmosphere. However, in other embodiments where very low
or no amounts of oxygen are found in the particles, the suitable
atmosphere may be a nitrogen atmosphere, an argon atmosphere, or an
atmosphere having less than about 10% hydrogen. These other
atmospheres may be advantageous to enable and improve material
handling during production.
Although pulsed thermal processing remains generally promising,
certain implementations of the pulsed thermal processing such as a
directed plasma arc system, face numerous challenges. In this
particular example, a directed plasma arc system sufficient to
provide pulsed thermal processing is an inherently cumbersome
system with high operational costs. The direct plasma arc system
requires power at a level that makes the entire system
energetically expensive and adds significant cost to the
manufacturing process. The directed plasma arc also exhibits long
lag time between pulses and thus makes the system difficult to mate
and synchronize with a continuous, roll-to-roll system. The time it
takes for such a system to recharge between pulses also creates a
very slow system or one that uses more than directed plasma arc,
which rapidly increase system costs.
In some embodiments of the present invention, other devices
suitable for rapid thermal processing may be used and they include
pulsed layers used in adiabatic mode for annealing (Shtyrokov E I,
Sov. Phys.--Semicond. 9 1309), continuous wave lasers (10-30 W
typically) (Ferris S D 1979 Laser-Solid Interactions and Laser
Processing (New York: AIP)), pulsed electron beam devices (Kamins T
11979 Appl. Phys. Leti. 35 282-5), scanning electron beam systems
(McMahon R A 1979 J. Vac. Sci. Techno. 16 1840-2) (Regolini J L
1979 Appl. Phys. Lett. 34 410), other beam systems (Hodgson R T
1980 Appl. Phys. Lett. 37 187-9), graphite plate heaters (Fan J C C
1983 Mater. Res. Soc. Proc. 4 751-8) (M W Geis 1980 Appl. Phys.
Lett. 37 454), lamp systems (Cohen R L 1978 Appl. Phys. Lett. 33
751-3), and scanned hydrogen flame systems (Downey D F 1982 Solid
State Technol. 25 87-93). In some embodiment of the present
invention, non-directed, low density system may be used.
Alternatively, other known pulsed heating processes are also
described in U.S. Pat. Nos. 4,350,537 and 4,356,384. Additionally,
it should be understood that methods and apparatus involving pulsed
electron beam processing and rapid thermal processing of solar
cells as described in expired U.S. Pat. No. 3,950,187 ("Method and
apparatus involving pulsed electron beam processing of
semiconductor devices") and 4,082,958 ("Apparatus involving pulsed
electron beam processing of semiconductor devices") are in the
public domain and well known. U.S. Pat. No. 4,729,962 also
describes another known method for rapid thermal processing of
solar cells. The above may be applied singly or in single or
multiple combinations with the above or other similar processing
techniques with various embodiments of the present invention.
It should be noted that using nanoflakes typically results in
precursor layers that heat into a solid layer at temperatures as
much as 50.degree. C. lower than a corresponding layer of spherical
nanoparticles. This is due in part because of the greater surface
area contact between particles.
In certain embodiments of the invention, the precursor layer 106
(or any of its sub-layers) may be annealed, either sequentially or
simultaneously. Such annealing may be accomplished by rapid heating
of the substrate 102 and precursor layer 106 from an ambient
temperature to a plateau temperature range of between about
200.degree. C. and about 600.degree. C. Processing comprises
annealing with a ramp-rate of 1-5.degree. C./sec, preferably over
5.degree. C./sec, to a temperature of about 200.degree. C. and
about 600.degree. C. The temperature is maintained in the plateau
range for a period of time ranging between about a fraction of a
second to about 60 minutes, and subsequently reduced. Optionally,
processing further comprise selenizing this annealed layer with a
ramp-rate of 1-5.degree. C./sec, preferably over 5.degree. C./sec,
to a temperature of about 225 to 575.degree. C. for a time period
of about 60 seconds to about 10 minutes in Se vapor, where the
plateau temperature is not necessarily kept constant in time, to
form the thin-film containing one or more chalcogenide compounds
containing Cu, In, Ga, and Se. Optionally, processing comprises
selenizing without the separate annealing step in an atmosphere
containing hydrogen gas, but may be densified and selenized in one
step with a ramp-rate of 1-5 C/sec, preferably over 5.degree.
C./sec, to a temperature of 225 to 575.degree. C. for a time period
of about 120 seconds to about 20 minutes in an atmosphere
containing either H.sub.2Se or a mixture of H.sub.2 and Se
vapor.
Alternatively, the annealing temperature could be modulated to
oscillate within a temperature range without being maintained at a
particular plateau temperature. This technique (referred to herein
as rapid thermal annealing or RTA) is particularly suitable for
forming photovoltaic active layers (sometimes called "absorber"
layers) on metal foil substrates, such as but not limited to
aluminum foil. Other suitable substrates include but are not
limited to other metals such as Stainless Steel, Copper, Titanium,
or Molybdenum, metallized plastic foils, glass, ceramic films, and
mixtures, alloys, and blends of these and similar or related
materials. The substrate may be flexible, such as the form of a
foil, or rigid, such as the form of a plate, or combinations of
these forms. Additional details of this technique are described in
U.S. patent application Ser. No. 10/943,685, which is incorporated
herein by reference.
The atmosphere associated with the annealing step may also be
varied. In one embodiment, the suitable atmosphere comprises a
hydrogen atmosphere. However, in other embodiments where very low
or no amounts of oxygen are found in the nanoflakes, the suitable
atmosphere may be a nitrogen atmosphere, an argon atmosphere, a
carbon monoxide atmosphere, or an atmosphere having less than about
10% hydrogen. These other atmospheres may be advantageous to enable
and improve material handling during production.
Referring now to FIG. 1D, the precursor layer 106 is processed to
form the dense film 110. The dense film 110 may actually have a
reduced thickness than the thickness of the wet precursor layer 106
since the carrier liquid and other materials have been removed
during processing. In one embodiment, the film 110 may have a
thickness in the range of about 0.5 microns to about 2.5 microns.
In other embodiments, the thickness of film 110 may be between
about 1.5 microns and about 2.25 microns. In one embodiment, the
resulting dense film 110 may be substantially void free. In some
embodiments, the dense film 110 has a void volume of about 5% or
less. In other embodiments, the void volume is about 10% or less.
In another embodiment, the void, volume is about 20% or less. In
still other embodiments, the void volume is about 24% or less. In
still other embodiments, the void volume is about 30% or less. The
processing of the precursor layer 106 will fuse the nanoflakes
together and in most instances, remove void space and thus reduce
the thickness of the resulting dense film.
Depending on the type of materials used to form the film 110, the
film 110 may be suitable for use as an absorber layer or be further
processed to become an absorber layer. More specifically, the film
110 may be a film as a result of a one step process, or for use in
another subsequent one step process making it a two step process,
or for use in a multi-step process. In a one step process, the film
110 is formed to include group IB-IIIA-VIA compounds and the film
110 may be an absorber film suitable for use in a photovoltaic
device. In a two step process, the film 110 may be a solid and/or
densified film that will have further processing to be suitable for
use as an absorber film for use in a photovoltaic device. As a
nonlimiting example, the film 110 in a two step process may not
contain any and/or sufficient amounts of a group VIA element to
function as an absorber layer. Adding a group VIA element or other
material may be the second step of the two-step process. Either a
mixture of two or more VIA elements can be used, or a third step
can be added with another VIA element as used in the second step. A
variety of methods of adding that material include printing of
group VIA element, using VIA element vapor, and/or other
techniques. It should also be understood that in a two step
process, the process atmospheres may be different. By way of
nonlimiting example, one atmosphere may optionally be a group
VIA-based atmosphere. As another nonlimiting example, one
atmosphere may be an inert atmosphere as described herein. Other
processing steps as used in a multi-step process may be a wet
chemical surface treatment to improve the IB-IIIA-VIA thin-film
surface, and/or an additional rapid thermal heating to improve bulk
and surface properties of the IB-IIIA-VIA thin-film.
Nanoflakes
Referring now to FIGS. 2A and 2B, embodiments of the nanoflakes 108
according to the present invention will be described in further
detail. The nanoflakes 108 may come in a variety of shapes and
sizes. In one embodiment, the nanoflakes 108 may have a large
aspect ratio, in terms of particle thickness to particle length.
FIG. 2A shows the density of the particle packing. FIG. 2A shows
that some nanoflakes have thicknesses between about 20 to about 100
nm. Some may have a length of about 500 nm or less. The aspect
ratio in some embodiments of nanoflakes may be about 10:1 or more
(ratio of the longest dimension to the shortest dimension of a
particle). Other embodiments may have an aspect ratio of about 30:1
or more. Still others may have an aspect ratio of about 50:1 or
more. An increase in aspect ratio would indicate that the longest
dimension has increased over the shortest dimension or that the
shortest dimension has decreased relative to the longest dimension.
Thus, aspect ratio herein involves the longest lateral dimension
(be it length or width) relative to the shortest dimension, which
is typically the thickness of a flake. The dimensions are measured
along edges or across a major axis to provide measurement of
dimensions such as but not limited to length, width, depth, and/or
diameter. When referring to a plurality of nanoflakes having a
defined aspect ratio, what is meant is that all of the nanoflakes
of a composition as a whole have an average aspect ratio as
defined. It should be understood that there may be a distribution
of particle aspect ratios around the average aspect ratio.
As seen in FIG. 2A, although the size and shape of the nanoflakes
108 may vary, most include at least one substantially planar
surface 120. The at least one planar surface 120 allows for greater
surface contact between adjacent nanoflakes 108. The greater
surface contact provides a variety of benefits. The greater contact
allows for improved atomic intermixing between adjacent particles.
For nanoflakes containing more than one element, even though there
may be atomic intermixing already in place for the particles, the
close contact in the film allows easy subsequent diffusion. Thus,
if a particle is slightly rich in one element, the increased
contact facilitates a more even distribution of elements in the
resulting dense film. Furthermore, greater interparticle
interfacial area leads to faster reaction rates. The planar shape
of the particles maximizes interparticle contact area. The
interparticle contact area allows chemical reactions (e.g. based
for example upon atomic diffusion) to be initiated, catalyzed,
and/or progress relatively rapidly and concurrently over large
areas. Thus, not only does the shape improve intermixing, the
greater interfacial area and interparticle contact area also
improves reaction rates.
Referring still to FIG. 2A, the planar shape also allows for
improved packing density. As seen in FIG. 2A, the nanoflakes 108
may be oriented substantially parallel to the surface of substrate
102 and stack one on top of the other to form the precursor layer
106. Intrinsically, the geometry of the nanoflakes allow for more
intimate contact than spherical particles or nanoparticles in the
precursor layer. In fact, it is possible that 100% of the planar
surface of the nanoflake is in contact with another nanoflake.
Thus, the planar shape of the nanoflakes creates a higher packing
density in the dense film as compared to a film made from a
precursor layer using an ink of spherical nanoparticles of the same
composition that is otherwise substantially identical. In some
embodiments, the planar shape of the nanoflakes creates a packing
density of at least about 70% in the precursor layer. In other
embodiments, the nanoflakes create a packing density of at least
about 80% in the precursor layer. In other embodiments, the
nanoflakes create a packing density of at least about 90% in the
precursor layer. In other embodiments, the nanoflakes create a
packing density of at least about 95% in the precursor layer.
As seen in FIG. 2B, the nanoflakes 108 may have a variety of
shapes. In some embodiments, the nanoflakes in the ink may include
those that are of random size and/or random shape. On the contrary,
particles size is extremely important for standard spherical
nanoparticles, and those spherical nanoparticles of different size
and composition will result in dispersion with unstable atomic
composition. The planar surface 120 of the nanoflakes allows for
particles that are more easily suspended in the carrier liquid.
Thus, even though the nanoflakes may not be monodisperse in size,
putting the constituent metals in plate form provides one method to
have particles suspended in the carrier liquid without rapid and/or
preferential settling of any constituent element. Additionally,
FIG. 2C is a magnified top-down view of microflakes 121 according
to one embodiment of the present invention
It should be understood that the nanoflakes 108 of the present
invention may be formed and/or size discriminated to provide a more
controlled size and shape distribution. The size distribution of
nanoflakes may be such that one standard deviation from a mean
length and/or width of the nanoflakes is less than about 250 nm. In
another embodiment, the size distribution of nanoflakes may be such
that one standard deviation from a mean length and/or width of the
nanoflakes is less than about 200 nm. In another embodiment, the
size distribution of nanoflakes may be such that one standard
deviation from a mean length and/or width of the nanoflakes is less
than about 150 nm. In another embodiment, the size distribution of
nanoflakes may be such that one standard deviation from a mean
length and/or width of the nanoflakes is less than about 100 nm. In
another embodiment, one standard deviation from a mean length of
the nanoflakes is less than about 50 nm. In yet another embodiment,
one standard deviation from a mean thickness of the nanoflakes is
less than about 10 nm. In another embodiment of the invention, one
standard deviation from a mean thickness of the nanoflakes is less
than about 5 nm. The nanoflakes each have a thickness less than
about 250 nm. In another embodiment, the nanoflakes each have a
thickness less than about 100 nm. In another embodiment, the
nanoflakes each have a thickness less than about 50 nm. In yet
another embodiment, the nanoflakes each have a thickness less than
about 20 nm. In terms of their shape, the nanoflakes may have an
aspect ratio of at least about 10 or more. In another embodiment,
the nanoflakes have an aspect ratio of at least about 15 or more.
The nanoflakes are of random planar shape and/or a random size
distribution. In other embodiments, the nanoflakes are of
non-random planar shape and/or a non-random size distribution.
The stoichiometric ratio of elements may vary between individual
nanoflakes so long as the overall amount in all of the particles
combined is at the desired or close to the desired stoichiometric
ratio for the precursor layer and/or resulting dense film.
According to one preferred embodiment of that process, the overall
amount of elements in the resulting film has a Cu/(In+Ga)
compositional range of about 0.7 to about 1.0 and a Ga/(In+Ga)
compositional range of about 0.05 to about 0.30. Optionally, the
Se/(In+Ga) compositional range may be about 0.00 to about 4.00 such
that a later step involving use of an additional source of Se may
or may not be required.
Nanoflake Formation
Referring now to FIG. 3, one embodiment of a device for forming
nanoflakes 108 will now be described. Nanoflakes 108 may be
obtained by a variety of techniques including, but not limited to,
size reducing techniques like ball milling, bead milling, small
media milling, agitator ball milling, planetary milling, horizontal
ball milling, pebble milling, pulverizing, hammering, dry grinding,
wet grinding, jet milling, or other types of milling, applied
singly or in any combination, on a commercially available feedstock
of the desired elemental, binary, ternary, or multi-nary material.
FIG. 3 shows one embodiment of a milling system 130 using a milling
machine 132 that contains the balls or beads, or other material
used in the milling process. The system 130 may be a closed system
to provide an oxygen-free environment for processing of the
feedstock material. A source of inert gas 134 may be coupled to the
closed system to maintain an oxygen-free environment. The milling
system 130 may also be configured to allow for cryomilling by
providing a liquid nitrogen or other cooling source 136 (shown in
phantom). Alternatively, the milling system 130 may also be
configured to provide heating during the milling process. Cycles of
heating and/or cooling can also be carried out during the milling
process. Optionally, the milling may also involve mixing a carrier
liquid and/or a dispersing agent with the powder or feedstock being
processed. In one embodiment of the present invention, the
nanoflakes 108 created by milling may be of a variety of sizes such
as but not limited to, about 20 nanometers to about 500 nanometers
in thickness. In another embodiment, the nanoflakes may be between
about 75 nanometers to 100 nanometers in thickness.
It should be understood that the milling may use beads or
microbeads made of materials harder and/or having a higher mass
density than the feedstock particles to transform the feedstock
particles to the appropriate size and shape. In one embodiment,
these beads are glass, ceramic, alumina, porcelain, silicon
carbide, or tungsten carbide beads, stainless steel balls with
ceramic shells, iron balls with ceramic shells, or the like to
minimize contamination risk to the nanoflakes. The mill itself or
parts of the mill may also have a ceramic lining or a lining of
another inert material or parts of the mill may be completely
ceramic or made chemically and mechanically inert to minimize
contamination of the slurry containing the nanoflakes. The beads
may also be sieved regularly during the process.
The ball milling may occur in an oxygen-free environment. This may
involve using a mill that is sealed from the outside environment
and purged of air. Milling may then occur under an inert atmosphere
or other oxygen-free environment. Some embodiments may involve
placing the mill inside a hood or chamber that provides the sealing
for an oxygen-free environment. The process may involve drying and
degassing the vehicle or choosing anhydrous, oxygen-free solvent to
begin with and loading without contact to air. The oxygen-free
milling may create oxygen-free nanoflakes which in turn reduces the
need for a step to remove oxygen from the particles. This could
significantly reduce the anneal time associated with turning the
nanoflakes precursor layer into the dense film. In some
embodiments, the anneal time is in the range of about 30 seconds.
Related to air-free nanoflake creation (size reduction), it should
be understood that the present invention may also include air-free
dispersion creation, and air-free coating, storage and/or
handling.
The milling may occur at a variety of temperatures. In one
embodiment of the present invention, the milling occurs at room
temperature. In another embodiment, the milling occurs at a
cryogenic temperature such as but not limited to
.ltoreq.-175.degree. C. This may allow milling to work on particles
that may be liquid or not sufficiently brittle at room temperature
for size reduction. The milling may also occur at a desired milling
temperature wherein all precursor particles are solids and the
precursor particles have a sufficient malleability at the milling
temperature to form the planar shape from the non-planar or planar
starting shape. This desired temperature may be at room
temperature, above room temperature, or below room temperature
and/or cycle between various temperatures. In one embodiment, the
milling temperature may be less than about 15 degrees C. In another
embodiment, the temperature is at less than about -175 degrees C.
In yet another embodiment, the milling may be cooled by liquid
nitrogen which is 80K, being -193 C. Temperature control during
milling may control possible chemical reaction between solvent,
dispersant, feedstock material, and/or parts of the mill. It should
be understood that in addition to the aforementioned, the
temperature may also vary over different time periods of the
milling process. As a nonlimiting example, the milling may occur at
a first temperature over an initial milling time period and proceed
to other temperatures for subsequent time periods during the
milling.
The milling may transform substantially all of the precursor
particles into nanoflakes. In some embodiments, the milling
transforms at least about 50% (by weight of all of the precursor
particles) of the precursor particles into nanoflakes. In other
embodiments, it is at least 50% by volume of all the precursor
particles being transformed to nanoflakes. Additionally, it should
be understood that the temperature can be constant or changed
during milling. This may be useful to adjust the material
properties of the feedstock material or partially milled material
to create particles of desired shape, size, and/or composition.
Although the present invention discloses a "top down" method for
forming nanoflakes, it should be understood that other techniques
may also be used. For example, quenching a material from the melt
on a surface such as a liquid cooling bath. Indium (and likely
gallium and selenium) nanoflakes may be formed by emulsifying
molten indium while agitating and quenching at the surface of a
cooling bath. It should be understood that any wet chemical, dry
chemical, dry physical, and/or wet physical technique to make
flakes can be used with the present invention (apart from dry or
wet size reduction). Thus, the present invention is not limited to
wet physical top-down methods (milling), but may also include
dry/wet bottom-up approaches. It should also be noted that size
reduction may optionally be a multi-step process. In one
nonlimiting example, this may first involve taking mm-sized
chunks/pieces that are dry grinded to <100 um, subsequently
milled in one, two, three, or more steps with subsequent reducing
bead size to the nanoflakes.
It should be understood that the feedstock particles for use with
the present invention may be prepared by a variety of methods. By
way of example and not limitation, U.S. Pat. No. 5,985,691 issued
to B. M. Basol et al describes a particle-based method to form a
Group IB-IIIA-VIA compound film. Eberspacher and Pauls in U.S. Pat.
No. 6,821,559 describe a process for making phase-stabilized
precursors in the form of fine particles, such as sub-micron
multinary metal particles, and multi-phase mixed-metal particles
comprising at least one metal oxide. Bulent Basol in U.S. Published
Patent application number 20040219730 describes a process of
forming a compound film including formulating a nano-powder
material with a controlled overall composition and having particles
of one solid solution. Using the solid-solution approach, Gallium
can be incorporated into the metallic dispersion in non-oxide
form--but only with up to approximately 18 relative atomic percent
(Subramanian, P. R. and Laughlin, D. E., in Binary Alloy Phase
Diagrams 2.sup.nd Edition, edited by Massalski, T. B. 1990. ASM
international, Materials Park, Ohio, pp 1410-1412; Hansen, M.,
Constitution of Binary Alloys. 1958. 2.sup.nd Edition, McGraw Hill,
pp. 582-584.) U.S. patent application Ser. No. 11/081,163 describes
a process of forming a compound film by formulating a mixture of
elemental nanoparticles composed of the IB, the IIIA, and,
optionally, the VIA group of elements having a controlled overall
composition. Discussion on chalcogenide powders may also be found
in the following: [(1) Vervaet, A. et al., E. C. Photovoltaic Sol.
Energy Conf., Proc. Int. Conf., 10th (1991), 900-3; (2) Journal of
Electronic Materials, Vol. 27, No. 5, 1998, p. 433; Ginley et al.;
(3) WO 99,378,32; Ginley et al.; (4) U.S. Pat. No. 6,126,740].
These methods may be used to create feedstock to be size reduced.
Others may form precursor sub-micron-sized particles ready for
solution-deposition. All documents listed above are fully
incorporated herein by reference for all purposes.
Ink Preparation
To formulate the dispersion used in the precursor layer 106, the
nanoflakes 108 are mixed together and with one or more chemicals
including but not limited to dispersants, surfactants, polymers,
binders, cross-linking agents, emulsifiers, anti-foaming agents,
dryers, solvents, fillers, extenders, thickening agents, film
conditioners, anti-oxidants, flow agents, leveling agents, and
corrosion inhibitors.
The inks created using the present invention may optionally include
a dispersant. Some embodiments may not include any dispersants.
Dispersants (also called wetting agents) are surface-active
substances used to prevent particles from aggregating or
flocculating, thus facilitating the suspension of solid materials
in a liquid medium and stabilizing the dispersion thereby produced.
If particle surfaces attract one another, then flocculation occurs,
often resulting in aggregation and decreasing stability and/or
homogeneity. If particle surfaces repel one another, then
stabilization occurs, where particles do not aggregate and tend not
to settle out of solution as fast.
An efficient dispersing agent can typically perform pigment
wetting, dispersing, and stabilizing. Dispersing agents are
different depending on the nature of the ink/paint. Polyphosphates,
styrene-maleinates and polyacrylates are often used for aqueous
formulations whereas fatty acid derivatives and low molecular
weight modified alkyd and polyester resins are often used for
organic formulations.
Surfactants are surface-active agents that lower the surface
tension of the solvent in which they dissolve, serving as wetting
agents, and keeping the surface tension of an (aqueous) medium low
so that an ink interacts with a substrate surface. Certain types of
surfactants are also used as dispersing agents. Surfactants
typically contain both a hydrophobic carbon chain and a hydrophilic
polar group. The polar group can be non-ionic. If the polar group
is ionic, the charge can be either positive or negative, resulting
in cationic or anionic surfactants. Zwitterionic surfactants
contain both positive and negative charges within the same
molecule; one example is N-n-Dodecyl-N,N-dimethyl betaine. Certain
surfactants are often used as dispersant agents for aqueous
solutions. Representative classes include acetylene diols, fatty
acid derivatives, phosphate esters, sodium polyacrylate salts,
polyacrylic acids, soya lecithin, trioctylphosphine (TOP), and
trioctylphosphine oxide (TOPO).
Binders and resins are often used to hold together proximate
particles in a nascent or formed dispersion. Examples of typical
binders include acrylic monomers (both as monofunctional diluents
and multifunctional reactive agents), acrylic resins (e.g. acrylic
polyol, amine synergists, epoxy acrylics, polyester acrylics,
polyether acrylics, styrene/acrylics, urethane acrylics, or vinyl
acrylics), alkyd resins (e.g. long-oil, medium-oil, short-oil, or
tall oil), adhesion promoters such as but not limited to polyvinyl
pyrrolidone (PVP), amide resins, amino resins (such as but not
limited to melamine-based or urea-based compounds),
asphalt/bitumen, butadiene acrylonitriles, cellulosic resins (such
as but not limited to cellulose acetate butyrate (CAB)), cellulose
acetate proprionate (CAP), ethyl cellulose (EC), nitrocellulose
(NC), or organic cellulose ester), chlorinated rubber, dimer fatty
acids, epoxy resin (e.g. acrylates, bisphenol A-based resins, epoxy
UV curing resins, esters, phenol and cresol (Novolacs), or
phenoxy-based compounds), ethylene co-terpolymers such as ethylene
acrylic/methacrylic Acid, E/AA, E/M/AA or ethylene vinyl acetate
(EVA), fluoropolymers, gelatin (e.g. Pluronic F-68 from BASF
Corporation of Florham Park, N.J.), glycol monomers, hydrocarbon
resins (e.g. aliphatic, aromatic, or coumarone-based such as
indene), maelic resins, modified urea, natural rubber, natural
resins and gums, rosins, modified phenolic resins, resols,
polyamide, polybutadienes (liquid hydroxyl-terminated), polyesters
(both saturated and unsaturated), polyolefins, polyurethane (PU)
isocyanates (e.g. hexamethylene diisocynate (HDI), isophorone
diisocyanate (IPDI), cycloaliphatics, diphenylmethane disiocyanate
(MDI), toluene diisocynate (TDI), or trimethylhexamethylene
diisocynate (TMDI)), polyurethane (PU) polyols (e.g. caprolactone,
dimer-based polyesters, polyester, or polyether), polyurethane (PU)
dispersions (PUDs) such those based on polyesters or polyethers,
polyurethane prepolymers (e.g. caprolactone, dimer-based
polyesters, polyesters, polyethers, and compounds based on urethane
acrylate), Polyurethane thermoplastics (TPU) such as polyester or
polyether, silicates (e.g. alkyl-silicates or water-glass based
compounds), silicones (amine functional, epoxy functional, ethoxy
functional, hydroxyl functional, methoxy functional, silanol
functional, or cinyl functional), styrenes (e.g. styrene-butadiene
emulsions, and styrene/vinyl toluene polymers and copolymers), or
vinyl compounds (e.g. polyolefins and polyolefin derivatives,
polystyrene and styrene copolymers, or polyvinyl acetate
(PVAC)).
Emulsifiers are dispersing agents that blend liquids with other
liquids by promoting the breakup of aggregating materials into
small droplets and therefore stabilize the suspension in solution.
For example, sorbitan esters are used as an emulsifier for the
preparation of water-in-oil (w/o) emulsions, for the preparation of
oil absorption bases (w/o), for the formation of w/o type pomades,
as a reabsorption agent, and as a non toxic anti-foaming agent.
Examples of emulsifiers are sorbitan esters such as sorbitan
sesquioleate (Arlacel 60), sorbitan sesquioleate (Arlacel 83),
sorbitan monolaurate (Span 20), sorbitan monopalmitate (Span 40),
sorbitan monostearate (Span 60), sorbitan tristearate (Span 65),
sorbitan mono-oleate (Span 80), and sorbitan trioleate (Span 85)
all of which are available, e.g., from Uniqema of New Castle, Del.
Other polymeric emulsifiers include polyoxyethylene monostearate
(Myrj 45), polyoxyethylene monostearate (Myrj 49), polyoxyl 40
stearate (Myrj 52), polyoxyethylene monolaurate (PEG 400),
polyoxyethylene monooleate (PEG 400 monoleate) and polyoxyethylene
monostearate (PEG 400 monostearate), and the Tween series of
surfactants including but not limited to polyoxyethylene sorbitan
monolaurate (Tween 20), polyoxyethylene sorbitan monolaurate (Tween
21), polyoxyethylene sorbitan monopalmitate (Tween 40),
polyoxyethylene sorbitan monostearate (Tween 60), polyoxyethylene
sorbitan tristearate (Tween 61), polyoxyethylene sorbitan
mono-oleate (Tween 80), polyoxyethylene sorbitan monooleate (Tween
81), and polyoxyethylene sorbitan tri-oleate (Tween 85) all of
which are available, e.g., from Uniqema of New Castle, Del.
Arlacel, Myrj, and Tween are registered trademarks of ICI Americas
Inc. of Wilmington, Del.
Foam may form from the release of various Ga--Ses during the
coating/printing process, especially if the printing process takes
place at high speeds. Surfactants may adsorb on the liquid-air
interface and stabilize it, accelerating foam formation.
Anti-foaming agents prevent foaming from being initiated, while
defoaming agents minimize or eliminate previously-formed foam.
Anti-foaming agents include hydrophobic solids, fatty oils, and
certain surfactants, all of which penetrate the liquid-air
interface to slow foam formation. Anti-foaming agents also include
both silicate, silicone and silicone-free materials. Silicone-free
materials include microcrystalline wax, mineral oil, polymeric
materials, and silica- and surfactant-based materials.
Solvents can be aqueous (water-based) or non-aqueous (organic).
While environmentally friendly, water-based solutions carry the
disadvantage of a relatively higher surface tension than organic
solvents, making it more difficult to wet substrates, especially
plastic substrates. To improve substrate wetting with polymer
substrates, surfactants may be added to lower the ink surface
tension (while minimizing surfactant-stabilized foaming), while the
substrate surfaces are modified to enhance their surface energy
(e.g. by corona treatment). Typical organic solvents include
acetate, acrylates, alcohols (butyl, ethyl, isopropyl, or methyl),
aldehydes, benzene, dibromomethane, chloroform, dichloromethane,
dichloroethane, trichloroethane, cyclic compounds (e.g.
cyclopentanone or cyclohexanone), esters (e.g. butyl acetate or
ethyl acetate), ethers, glycols (such as ethylene glycol or
propylene glycol), hexane, heptane, aliphatic hydrocarbons,
aromatic hydrocarbons, ketones (e.g. acetone, methyl ethyl ketone,
or methyl isobutyl ketone), natural oils, terpenes, terpinol,
toluene.
Additional components may include fillers/extenders, thickening
agents, rheology modifiers, surface conditioners, including
adhesion promoters/bonding, anti-gelling agents, anti-blocking
agents, antistatic agents, chelating/complexing agents, corrosion
inhibitors, flame/rust inhibitors, flame and fire retardants,
humectants, heat stabilizers, light-stabilizers/UV absorbers,
lubricants, pH stabilizers, and materials for slip control,
anti-oxidants, and flow and leveling agents. It should be
understood that all components may be added singly or in
combination with other components.
Roll-to-Roll Manufacturing
Referring now to FIG. 4, a roll-to-roll manufacturing process
according to the present invention will now be described.
Embodiments of the invention using the nanoflakes are well suited
for use with roll-to-roll manufacturing. Specifically, in a
roll-to-roll manufacturing system 200 a flexible substrate 201,
e.g., aluminum foil travels from a supply roll 202 to a take-up
roll 204. In between the supply and take-up rolls, the substrate
201 passes a number of applicators 206A, 206B, 206C, e.g.
microgravure rollers and heater units 208A, 208B, 208C. Each
applicator deposits a different layer or sub-layer of a precursor
layer, e.g., as described above. The heater units are used to
anneal the different layers and/or sub-layers to form dense films.
In the example depicted in FIG. 4, applicators 206A and 206B may
apply different sub-layers of a precursor layer (such as precursor
layer 106). Heater units 208A and 208B may anneal each sub-layer
before the next sub-layer is deposited. Alternatively, both
sub-layers may be annealed at the same time. Applicator 206C may
optionally apply an extra layer of material containing chalcogen or
alloy or elemental particles as described above. Heater unit 208C
heats the optional layer and precursor layer as described above.
Note that it is also possible to deposit the precursor layer (or
sub-layers) then deposit any additional layer and then heat all
three layers together to form the IB-IIIA-chalcogenide compound
film used for the photovoltaic absorber layer. The roll-to-roll
system may be a continuous roll-to-roll and/or segmented
roll-to-roll, and/or batch mode processing roll-to-roll system.
Photovoltaic Device
Referring now to FIG. 5, the films fabricated as described above
may serve as an absorber layer in a photovoltaic device, module, or
solar panel. An example of such a photovoltaic device 300 is shown
in FIG. 4. The device 300 includes a base substrate 302, an
optional adhesion layer 303, a base or back electrode 304, a p-type
absorber layer 306 incorporating a film of the type described
above, a n-type semiconductor thin film 308 and a transparent
electrode 310. By way of example, the base substrate 302 may be
made of a metal foil, a polymer such as polyimides (PI),
polyamides, polyetheretherketone (PEEK), Polyethersulfone (PES),
polyetherimide (PEI), polyethylene naphtalate (PEN), Polyester
(PET), related polymers, or a metallized plastic. By way of
nonlimiting example, related polymers include those with similar
structural and/or functional properties and/or material attributes.
The base electrode 304 is made of an electrically conductive
material. By way of example, the base electrode 304 may be of a
metal layer whose thickness may be selected from the range of about
0.1 micron to about 25 microns. An optional intermediate layer 303
may be incorporated between the electrode 304 and the substrate
302. Optionally, the layer 303 may be a diffusion barrier layer to
prevent diffusion of material between the substrate 302 and the
electrode 304. The diffusion barrier layer 303 may be a conductive
layer or it may be an electrically nonconductive layer.
Aluminum and molybdenum can and often do inter-diffuse into one
another, especially upon heating to elevated temperatures as used
for absorber growth, with deleterious electronic and/or
optoelectronic effects on the device 300. Furthermore aluminum can
diffuse though molybdenum into layers beyond e.g. CIG(S). To
inhibit such inter-diffusion, an intermediate, interfacial layer
303 may be incorporated between the aluminum foil substrate 302 and
molybdenum base electrode 304. The interfacial layer may be
composed of any of a variety of materials, including but not
limited to chromium, vanadium, tungsten, and glass, or compounds
such as nitrides (including but not limited to titanium nitride,
tantalum nitride, tungsten nitride, hafnium nitride, niobium
nitride, zirconium nitride, vanadium nitride, silicon nitride, or
molybdenum nitride), oxynitrides (including but not limited to
oxynitrides of Ti, Ta, V, W, Si, Zr, Nb, Hf, or Mo), oxides, and/or
carbides. The material may be selected to be an electrically
conductive material. In one embodiment, the materials selected from
the aforementioned may be those that are electrically conductive
diffusion barriers. The thickness of this layer can range from 10
nm to 50 nm or from 10 nm to 30 nm. Optionally, the thickness may
be in the range of about 50 nm to about 1000 nm. Optionally, the
thickness may be in the range of about 100 nm to about 750 nm.
Optionally, the thickness may be in the range of about 100 nm to
about 500 nm. Optionally, the thickness may be in the range of
about 110 nm to about 300 nm. In one embodiment, the thickness of
the layer 303 is at least 100 nm or more. In another embodiment,
the thickness of the layer 303 is at least 150 nm or more. In one
embodiment, the thickness of the layer 303 is at least 200 nm or
more. Optionally, some embodiments may include another layer such
as but not limited to a copper layer, a titanium layer, or other
metal layer above the layer 303 and below the base electrode layer
304. Optionally, some embodiments may include another layer such as
but not limited to a copper layer, a titanium layer, an aluminum
layer, or other metal layer below the layer 303 and below the base
electrode layer 304. This layer may be thicker than the layer 303.
Optionally, it may be the same thickness or thinner than the layer
303. This layer 303 may be placed on one or optionally both sides
of the aluminum foil (shown as layer 305 in phantom in FIG. 5).
If barrier layers are on both sides of the aluminum foil, it should
be understood that the protective layers may be of the same
material or they may optionally be different materials from the
aforementioned materials. The bottom protective layer 305 may be
any of the materials. Optionally, some embodiments may include
another layer 307 such as but not limited to an aluminum layer
above the layer 305 and below the aluminum foil 302. This layer 307
may be thicker than the layer 303.
The transparent electrode 310 may include a transparent conductive
layer 309 and a layer of metal (e.g., Al, Ag, Cu, or Ni) fingers
311 to reduce sheet resistance.
The n-type semiconductor thin film 308 serves as a junction partner
between the compound film and the transparent conducting layer 309.
By way of example, the n-type semiconductor thin film 308
(sometimes referred to as a junction partner layer) may include
inorganic materials such as cadmium sulfide (CdS), zinc sulfide
(ZnS), zinc hydroxide, zinc selenide (ZnSe), n-type organic
materials, or some combination of two or more of these or similar
materials, or organic materials such as n-type polymers and/or
small molecules Layers of these materials may be deposited, e.g.,
by chemical bath deposition (CBD) and/or chemical surface
deposition (and/or related methods), to a thickness ranging from
about 2 nm to about 1000 nm, more preferably from about 5 nm to
about 500 nm, and most preferably from about 10 nm to about 300 nm.
This may also configured for use in a continuous roll-to-roll
and/or segmented roll-to-roll and/or a batch mode system.
The transparent conductive layer 309 may be inorganic, e.g., a
transparent conductive oxide (TCO) such as but not limited to
indium tin oxide (ITO), fluorinated indium tin oxide, zinc oxide
(ZnO) or aluminum doped zinc oxide, or a related material, which
can be deposited using any of a variety of means including but not
limited to sputtering, evaporation, CBD, electroplating, sol-gel
based coating, spray coating, chemical vapor deposition (CVD),
physical vapor deposition (PVD), atomic layer deposition (ALD), and
the like. Alternatively, the transparent conductive layer may
include a transparent conductive polymeric layer, e.g. a
transparent layer of doped PEDOT (Poly-3,4-Ethylenedioxythiophene),
carbon nanotubes or related structures, or other transparent
organic materials, either singly or in combination, which can be
deposited using spin, dip, or spray coating, and the like or using
any of various vapor deposition techniques. Optionally, it should
be understood that intrinsic (non-conductive) i-ZnO may be used
between CdS and Al-doped ZnO. Optionally, an insulating layer may
be included between the layer 308 and transparent conductive layer
309. Combinations of inorganic and organic materials can also be
used to form a hybrid transparent conductive layer. Thus, the layer
309 may optionally be an organic (polymeric or a mixed
polymeric-molecular) or a hybrid (organic-inorganic). Examples of
such a transparent conductive layer are described e.g., in
commonly-assigned US Patent Application Publication Number
20040187917, which is incorporated herein by reference.
Those of skill in the art will be able to devise variations on the
above embodiments that are within the scope of these teachings. For
example, it is noted that in embodiments of the present invention,
portions of the IB-IIIA precursor layers (or certain sub-layers of
the precursor layers or other layers in the stack) may be deposited
using techniques other than nanoflake-based inks. For example
precursor layers or constituent sub-layers may be deposited using
any of a variety of alternative deposition techniques including but
not limited to solution-deposition of spherical nanopowder-based
inks, vapor deposition techniques such as ALD, evaporation,
sputtering, CVD, PVD, electroplating and the like.
Referring now to FIG. 6, a flowchart showing one embodiment of a
method according to the present invention will now be described.
FIG. 6 shows that at step 350, the nanoflakes 108 may be created
using one of the processes described herein. Optionally, there may
be a washing step 351 to remove any undesired residue. Once the
nanoflakes 108 are created, step 352 shows that the ink may be
formulated with the nanoflakes and at least one other component
such as but not limited to a carrier liquid. Optionally, it should
be understood that some embodiments of the invention may combine
the steps 350 and 352 into one process step as indicated by box 353
(shown in phantom) if the creation process results in a coatable
formulation. As one nonlimiting example, this may be the case if
the dispersants and/or solvents used during formation can also be
used to form a good coating. At step 354, the substrate 102 may be
coated with the ink to form the precursor layer 106. Optionally,
there may be a step 355 of removing dispersant and/or other
residual of the as-coated layer 106 by methods such as but not
limited to heating, washing, or the like. Optionally, step 355 may
involve a step of removing solve after ink deposition by using a
drying device such as but not limited to a drying tunnel/furnace.
Step 356 shows the precursor layer is processed to form a dense
film which may then further be processed at step 358 to form the
absorber layer. Optionally, it should be understood that some
embodiments of the invention may combine the steps 356 and 358 into
one process step if the dense film is an absorber layer and no
further processing of the film is needed. Step 360 shows that the
N-type junction may be formed over and/or in contact with the
absorber layer. Step 362 shows that a transparent electrode may be
formed over the N-type junction layer to create a stack that can
function as a solar cell.
Referring now to FIG. 7, it should also be understood that a
plurality of devices 300 may be incorporated into a module 400 to
form a solar module that includes various packaging, durability,
and environmental protection features to enable the devices 300 to
be installed in an outdoor environment. In one embodiment, the
module 400 may include a frame 402 that supports a substrate 404 on
which the devices 300 may be mounted. This module 400 simplifies
the installation process by allowing a plurality of devices 300 to
be installed at one time. Alternatively, flexible form factors may
also be employed. It should also be understood that an
encapsulating device and/or layers may be used to protect from
environmental influences. As a nonlimiting example, the
encapsulating device and/or layers may block the ingress of
moisture and/or oxygen and/or acidic rain into the device,
especially over extended environmental exposure.
Extra Source of Chalcogen
It should be understood that the present invention using nanoflakes
may also use an extra chalcogen source in a manner similar to that
described in copending, U.S. patent application Ser. No.
11/290,633, wherein the precursor material contains 1)
chalcogenides such as, but not limited to, copper selenide, and/or
indium selenide and/or gallium selenide and/or 2) a source of extra
chalcogen such as, but not limited to, Se or S nanoparticles less
than about 200 nanometers in size. In one nonlimiting example, the
chalcogenide and/or the extra chalcogen may be in the form of
nanoflakes and/or nanoflakes while the extra source of chalcogen
may be flakes and/or non-flakes. The chalcogenide nanoflakes may be
one or more binary alloy chalcogenides such as, but not limited to,
group IB-binary chalcogenide nanoparticles (e.g. group IB non-oxide
chalcogenides, such as Cu--Se, CuS or CuTe) and/or group
IIIA-chalcogenide nanoparticles (e.g., group IIIA non-oxide
chalcogenides, such as Ga(Se, S, Te), In(Se, S, Te) and Al(SE, S,
Te). In other embodiments, the nanoflakes may be non-chalcogenides
such as but not limited to group IB and/or IIIA materials like
CuIn, CuGa, and/or InGa. If the chalcogen melts at a relatively low
temperature (e.g., 220.degree. C. for Se, 120.degree. C. for S) the
chalcogen is already in a liquid state and makes good contact with
the nanoflakes. If the nanoflakes and chalcogen are then heated
sufficiently (e.g., at about 375.degree. C.), the chalcogen reacts
with the chalcogenides to form the desired IB-IIIA-chalcogenide
material. Referring now to FIGS. 8A-8C, the chalcogenide nanoflakes
502 and a source of extra chalcogen, e.g., in the form of a powder
containing chalcogen particles 504 may be supported on a substrate
501. As a nonlimiting example, the chalcogen particles may be
micron- and/or submicron-sized non-oxygen chalcogen (e.g., Se, S or
Te) particles, e.g., a few hundred nanometers or less to a few
microns in size. The mixture of chalcogenide nanoflakes 502 and
chalcogen particles 504 is placed on the substrate 501 and heated
to a temperature sufficient to melt the extra chalcogen particles
504 to form a liquid chalcogen 506 as shown in FIG. 8B. The liquid
chalcogen 506 and chalcogenides 502 are heated to a temperature
sufficient to react the liquid chalcogen 506 with the chalcogenides
502 to form a dense film of a group IB-IIIA-chalcogenide compound
508 as shown in FIG. 1C. The dense film of group
IB-IIIA-chalcogenide compound is then cooled down.
Although not limited to the following, the chalcogenide particles
502 may be obtained starting from a binary chalcogenide feedstock
material, e.g., micron size particles or larger. Examples of
chalcogenide materials available commercially are listed in Table I
below.
TABLE-US-00001 TABLE I Chemical Formula Typical % Purity Aluminum
selenide Al2Se3 99.5 Aluminum sulfide Al2S3 98 Aluminum sulfide
Al2S3 99.9 Aluminum telluride Al2Te3 99.5 Copper selenide Cu--Se
99.5 Copper selenide Cu2Se 99.5 Gallium selenide Ga2Se3 99.999
Copper sulfide Cu2S(may be Cu1.8-2S) 99.5 Copper sulfide CuS 99.5
Copper sulfide CuS 99.99 Copper telluride CuTe(generally Cu1.4Te)
99.5 Copper telluride Cu2Te 99.5 Gallium sulfide Ga2S3 99.95
Gallium sulfide GaS 99.95 Gallium telluride GaTe 99.999 Gallium
telluride Ga2Te3 99.999 Indium selenide In2Se3 99.999 Indium
selenide In2Se3 99.99% Indium selenide In2Se3 99.9 Indium selenide
In2Se3 99.9 Indium sulfide InS 99.999 Indium sulfide In2S3 99.99
Indium telluride In2Te3 99.999 Indium telluride In2Te3 99.999
Examples of chalcogen powders and other feedstocks commercially
available are listed in Table II below.
TABLE-US-00002 TABLE II Chemical Formula Typical % Purity Selenium
metal Se 99.99 Selenium metal Se 99.6 Selenium metal Se 99.6
Selenium metal Se 99.999 Selenium metal Se 99.999 Sulfur S 99.999
Tellurium metal Te 99.95 Tellurium metal Te 99.5 Tellurium metal Te
99.5 Tellurium metal Te 99.9999 Tellurium metal Te 99.99 Tellurium
metal Te 99.999 Tellurium metal Te 99.999 Tellurium metal Te 99.95
Tellurium metal Te 99.5
Printing a Layer of the Extra Source of Chalcogen
Referring now to FIGS. 9A-9E, another embodiment of the present
invention using nanoflakes will now be described. FIG. 9A shows a
substrate 602 with a contact layer 604 on which a nanoflake
precursor layer 606 is formed. An extra source of chalcogen may be
provided as a discrete layer 608 containing an extra source of
chalcogen such as, but not limited to, elemental chalcogen
particles 607 over a nanoflake precursor layer 606. By way of
example, and without loss of generality, the chalcogen particles
may be particles of selenium, sulfur or tellurium. As shown in FIG.
9B, heat 609 is applied to the nanoflake precursor layer 606 and
the layer 608 containing the chalcogen particles to heat them to a
temperature sufficient to melt the chalcogen particles 607 and to
react the chalcogen particles 607 with the elements in the
precursor layer 606. It should be understood that the nanoflakes
may be made of a variety of materials include but not limited to
group IB elements, group IIIA elements, and/or group VIA elements.
The reaction of the chalcogen particles 607 with the elements of
the precursor layer 606 forms a compound film 610 of a group
IB-IIIA-chalcogenide compound as shown in FIG. 9C. Preferably, the
group IB-IIIA-chalcogenide compound is of the form
CuIn.sub.1-xGa.sub.xSe.sub.2(1-y)S.sub.2y, where
0.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1. It should be
understood that in some embodiments, the precursor layer 106 may be
heated prior to application of the layer 108 with the extra source
of chalcogen. In other embodiments, the precursor layer 106 is not
pre-heated and the layers 106 and 108 are heated together.
In one embodiment of the present invention, the precursor layer 606
may be between about 4.0 to about 0.5 microns thick. The layer 608
containing chalcogen particles 607 may have a thickness in the
range of about 4.0 microns to about 0.5 microns. The chalcogen
particles 607 in the layer 608 may be between about 1 nanometer and
about 25 microns in size, preferably between about 25 nanometers
and about 300 nanometers in size. It is noted that the chalcogen
particles 607 may be initially larger than the final thickness of
the IB-IIIA-VIA compound film 610. The chalcogen particles 607 may
be mixed with solvents, carriers, dispersants etc. to prepare an
ink or a paste that is suitable for wet deposition over the
precursor layer 606 to form the layer 608. Alternatively, the
chalcogen particles 607 may be prepared for deposition on a
substrate through dry processes to form the layer 608. It is also
noted that the heating of the layer 608 containing chalcogen
particles 607 may be carried out by an RTA process, e.g., as
described above.
The chalcogen particles 607 (e.g., Se or S) may be formed in
several different ways. For example, Se or S particles may be
formed starting with a commercially available fine mesh powder
(e.g., 200 mesh/75 micron) and ball milling the powder to a
desirable size. A typical ball milling procedure may use a ceramic
milling jar filled with grinding ceramic balls and a feedstock
material, which may be in the form of a powder, in a liquid medium.
When the jar is rotated or shaken, the balls shake and grind the
powder in the liquid medium to reduce the size of the particles of
the feedstock material. Optionally, the process may include dry
(pre-) grinding of bigger pieces of material such as but not
limited to Se. The dry-grinding may use pieces 2-6 mm and smaller,
but it would be able to handle bigger pieces as well. Note that
this is true for all size reductions where the process may start
with bigger feedstock materials, dry grinding, and subsequently
starting wet grinding (such as but not limited to ball milling).
The mill itself may range from a small media mill to a horizontal
rotating ceramic jar.
Referring now to FIG. 9D, it should also be understood that in some
embodiments, the layer 608 of chalcogen particles may be formed
below the precursor layer 606. This position of the layer 608 still
allows the chalcogen particles to provide a sufficient surplus of
chalcogen to the precursor layer 606 to fully react with the group
IB and group IIIA elements in layer 606. Additionally, since the
chalcogen released from the layer 608 may be rising through the
layer 606, this position of the layer 608 below layer 606 may be
beneficial to generate greater intermixing between elements. The
thickness of the layer 608 may be in the range of about 4.0 microns
to about 0.5 microns. In still other embodiments, the thickness of
layer 608 may be in the range of about 500 nm to about 50 nm. In
one nonlimiting example, a separate Se layer of about 100 nm or
more might be sufficient. The coating of chalcogen may incorporate
coating with powder, Se evaporation, or other Se deposition method
such as but not limited to chemical vapor deposition (CVD),
physical vapor deposition (PVD), atomic layer deposition (ALD),
electroplating, and/or similar or related methods using singly or
in combination. Other types of material deposition technology may
be used to get Se layers thinner than 0.5 microns or thinner than
1.0 micron. It should also be understood that in some embodiments,
the extra source of chalcogen is not limited to only elemental
chalcogen, but in some embodiments, may be an alloy and/or solution
of one or more chalcogens.
Optionally, it should be understood that the extra source of
chalcogen may be mixed with and/or deposited within the precursor
layer, instead of as a discrete layer. In one embodiment of the
present invention, oxygen-free particles or substantially oxygen
free particles of chalcogen could be used. If the chalcogen is used
with nanoflakes and/or plate shaped precursor materials,
densification might not end up an issue due to the higher density
achieved by using planar particles, so there is no reason to
exclude printing Se and/or other source of chalcogen within the
precursor layer as opposed to a discrete layer. This may involve
not having to heat the precursor layer to the previous processing
temperatures. In some embodiments, this may involve forming the
film without heating above about 400.degree. C. In some
embodiments, this may involve not having to heat above about
300.degree. C.
In still other embodiments of the present invention, multiple
layers of material may be printed and reacted with chalcogen before
deposition of the next layer. One nonlimiting example would be to
deposit a Cu--In--Ga layer, anneal it, then deposit an Se layer
then treat that with RTA, follow that up by depositing another
precursor layer rich in Ga, followed by another deposition of Se,
and finished by a second RTA treatment. More generically, this may
include forming a precursor layer (either heat or not) then coating
a layer of the extra source of chalcogen (then heat or not) then
form another layer of more precursor (heat or not) and then for
another layer of the extra source of chalcogen (then heat or not)
and repeat as many times as desired to grade the composition or
nucleating desired crystal sizes. In one nonlimiting example, this
may be used to grade the gallium concentration. In another
embodiment, this may be used to grade the copper concentration. In
yet another embodiment, this may be used to grade the indium
concentration. In a still further embodiment, this may be used to
grade the selenium concentration. In yet another embodiment this
may be used to grade the selenium concentration. Another reason
would be to first grow copper rich films to get big crystals and
then to start adding copper-poor layers to get the stoichiometry
back. Of course this embodiment can combined to allow the chalcogen
to be deposited in the precursor layer for any of the steps
involved.
Referring now to FIG. 9E, an alternative way to take advantage of
the low melting points of chalcogens such as but not limited to Se
and S is to form core-shell nanoflakes in which the core is a
nanoflake 607 and the shell 620 is a chalcogen coating. The
chalcogen 620 melts and quickly reacts with the material of the
core nanoflakes 607. As a nonlimiting example, the core may be a
mix of elemental particles of groups IB (e.g., Cu) and/or IIIA
(e.g., Ga and In), which may be obtained by ball milling of
elemental feedstock to a desired size. Examples of elemental
feedstock materials available are listed in Table III below. The
core may also be a chalcogenide core or other material as described
herein.
TABLE-US-00003 TABLE III Chemical Formula Typical % Purity Copper
metal Cu 99.99 Copper metal Cu 99 Copper metal Cu 99.5 Copper metal
Cu 99.5 Copper metal Cu 99 Copper metal Cu 99.999 Copper metal Cu
99.999 Copper metal Cu 99.9 Copper metal Cu 99.5 Copper metal Cu
99.9 (O.sub.2 typ. 2-10%) Copper metal Cu 99.99 Copper metal Cu
99.997 Copper metal Cu 99.99 Gallium metal Ga 99.999999 Gallium
metal Ga 99.99999 Gallium metal Ga 99.99 Gallium metal Ga 99.9999
Gallium metal Ga 99.999 Indium metal In 99.9999 Indium metal In
99.999 Indium metal In 99.999 Indium metal In 99.99 Indium metal In
99.999 Indium metal In 99.99 Indium metal In 99.99
Chalcogen-Rich Chalcogenide Particles
Referring now to FIGS. 10A-10C, it should be understood that yet
another embodiment of the present invention includes embodiments
where the nanoflake particles may be chalcogenide particles that
are chalcogen-rich (whether they be group IB-chalcogenides, group
IIIA chalcogenides, or other chalcogenides). In these embodiments,
the use of a separate source of chalcogen may not be needed since
the excess chalcogen is contained within the chalcogenide particles
themselves. In one nonlimiting example of a group IB-chalcogenide,
the chalcogenide may be copper selenide, wherein the material
comprises Cu.sub.xSe.sub.y, wherein x<y. Thus, this is a
chalcogen-rich chalcogenide that will provide excess amounts of
selenium when the particles of the precursor material are
processed.
The purpose of providing an extra source of chalcogen is to first
create liquid to enlarge the contact area between the initial solid
particles (flakes) and the liquid. Secondly, when working with
chalcogen-poor films, the extra source adds chalcogen to get to the
stoichiometric desired chalcogen amount. Third, chalcogens such as
Se are volatile and inevitably some is lost during processing. So,
main purpose is to create liquid. There are also a variety of other
routes to increase the amount of liquid when the precursor layer is
processed. These routes include but are not limited to: 1) Cu--Se
more Se-rich than Cu.sub.2-xSe (>377.degree. C., even more
liquid above >523.degree. C.); 2) Cu--Se equal to or more
Se-rich than Cu.sub.2Se when adding additional Se (>220.degree.
C.); 3) In--Se of composition In.sub.4Se.sub.3, or in between
In.sub.4Se.sub.3 and In.sub.1Se.sub.1 (>550.degree. C.); 4)
In--Se equal to or more Se-rich than In.sub.4Se.sub.3 when adding
additional Se (>220.degree. C.); 5) In--Se in between In and
In.sub.4Se.sub.3 (>156.degree. C., preferably in an oxygen-free
environment since In is created 6) Ga-emulsion (>29.degree. C.,
preferably oxygen-free); and hardly (but possible) for Ga--Se. Even
when working with Se vapor, it still would be tremendously
advantageous to create additional liquid in the precursor layer
itself using one of the above methods or by a comparable
method.
Referring now to FIG. 10A, it should be understood that the ink may
contain multiple types of particles. In FIG. 10A, the particles 704
are a first type of particle and the particles 706 are a second
type of particle. In one nonlimiting example, the ink may have
multiple types of particles wherein only one type of particle is a
chalcogenide and is also chalcogen-rich. In other embodiments, the
ink may have particles wherein at least two types of chalcogenides
in the ink are chalcogen-rich. As a nonlimiting example, the ink
may have Cu.sub.xSe.sub.y (wherein x<y) and In.sub.aSe.sub.b
(wherein a<b). In still further embodiments, the ink may have
particles 704, 706, and 708 (shown in phantom) wherein at least
three types of chalcogenide particles are in the ink. By way of
nonlimiting example, the chalcogen-rich chalcogenide particles may
be Cu--Se, In--Se, and/or Ga--Se. All three may be chalcogen-rich.
A variety of combinations are possible to obtain the desired excess
amount of chalcogen. If the ink has three types of particles, it
should be understood that not all of the particles need to be
chalcogenides or chalcogen rich. Even within an ink with only one
type of particle, e.g. Cu--Se, there may be a mixture of
chalcogen-rich particles e.g. Cu.sub.xSe.sub.y with x<y, and
non-chalcogen-rich particles, e.g. Cu.sub.xSe.sub.y with x>y. As
a nonlimiting example, a mixture may contain particles of copper
selenide that may have the following compositions: Cu.sub.1Se.sub.1
and Cu.sub.1Se.sub.2.
Referring still to FIG. 10A, it should also be understood that even
with the chalcogen-rich particles, an additional layer 710 (shown
in phantom) may be also printed or coated on to the ink to provide
an excess source of chalcogen as described previously. The material
in this layer may be a pure chalcogen, a chalcogenide, or a
compound that contains chalcogen. As seen in FIG. 10C, the
additional layer 710 (shown in phantom) may also be printed onto
the resulting film if further processing with chalcogen is
desired.
Referring now to FIG. 10B, heat may be applied to the particles 704
and 706 to begin converting them. Due to the various melting
temperatures of the materials in the particles, some may start to
assume a liquid form sooner than others. In the present invention,
this is particularly advantageous if the materials assuming liquid
form also release the excess chalcogen as a liquid 712 which may
surround the other materials and/or elements such as 714 and 716 in
the layer. FIG. 10B includes a view with an enlarged view of the
liquid 712 and materials and/or elements 714 and 716.
The amount of extra chalcogen provided by all of the particles
overall is at a level that is equal to or above the stoichiometric
level found in the compound after processing. In one embodiment of
the present invention, the excess amount of chalcogen comprises an
amount greater than the sum of 1) a stoichiometric amount found in
the final IB-IIIA-chalcogenide film and 2) a minimum amount of
chalcogen necessary to account for losses during processing to form
the final IB-IIIA-chalcogenide having the desired stoichiometric
ratio. Although not limited to the following, the excess chalcogen
may act as a flux that will liquefy at the processing temperature
and promote greater atomic intermixing of particles provided by the
liquefied excess chalcogen. The liquefied excess chalcogen may also
ensure that sufficient chalcogen is present to react with the group
IB and IIIA elements. The excess chalcogen helps to "digest" or
"solubilize" the particles or flakes. The excess chalcogen will
escape from the layer before the desired film is fully formed.
Referring now to FIG. 10C, heat may continue to be applied until
the group IB-IIIA chalcogenide film 720 is formed. Another layer
722 (shown in phantom) may be applied for further processing of the
film 720 if particular features are desired. As a nonlimiting
example, an extra source of gallium may be added to the top layer
and further reacted with the film 720. Others sources may provide
additional selenium to improve selenization at the top surface of
the film 720.
It should be understood that a variety of chalcogenide particles
may also be combined with non-chalcogenide particles to arrive at
the desired excess supply of chalcogen in the precursor layer. The
following table (Table IV) provides a non-limiting matrix of some
of the possible combinations between chalcogenide particles listed
in the rows and the non-chalcogenide particles listed in the
columns.
TABLE-US-00004 TABLE IV Cu In Ga Cu--In Se Se + Cu Se + In Se + Ga
Se + Cu--In Cu--Se Cu--Se + Cu Cu--Se + In Cu--Se + Ga Cu--Se +
Cu--In In--Se In--Se + Cu In--Se + In In--Se + Ga In--Se + Cu--In
Ga--Se Ga--Se + Cu Ga--Se + In Ga--Se + Ga Ga--Se + Cu--In
Cu--In--Se Cu--In--Se + Cu Cu--In--Se + In Cu--In--Se + Ga
Cu--In--Se + Cu--In Cu--Ga--Se Cu--Ga--Se + Cu Cu--Ga--Se + In
Cu--Ga--Se + Ga Cu--Ga--Se + Cu--In In--Ga--Se In--Ga--Se + Cu
In--Ga--Se + In In--Ga--Se + Ga In--Ga--Se + CuIn Cu--In--Ga--Se
Cu--In--Ga--Se + Cu Cu--In--Ga--Se + In Cu--In--Ga--Se + Ga
Cu--In--Ga--Se + CuIn Cu--Ga In--Ga Cu--In--Ga Se Se + Cu--Ga Se +
In--Ga Se + Cu--In--Ga Cu--Se Cu--Se + Cu--Ga Cu--Se + In--Ga
Cu--Se + Cu--In--Ga In--Se In--Se + Cu--Ga In--Se + In--Ga In--Se +
Cu--In--Ga Ga--Se Ga--Se + Cu--Ga Ga--Se + In--Ga Ga--Se +
Cu--In--Ga Cu--In--Se Cu--In--Se + Cu--Ga Cu--In--Se + In--Ga
Cu--In--Se + Cu--In--Ga Cu--Ga--Se Cu--Ga--Se + Cu--Ga Cu--Ga--Se +
In--Ga Cu--Ga--Se + Cu--In--Ga In--Ga--Se In--Ga--Se + Cu--Ga
In--Ga--Se + In--Ga In--Ga--Se + Cu--In--Ga Cu--In--Ga--Se
Cu--In--Ga--Se + CuGa Cu--In--Ga--Se + InGa Cu--In--Ga--Se +
Cu--In--Ga
In yet another embodiment, the present invention may combine a
variety of chalcogenide particles with other chalcogenide
particles. The following table (Table V) provides a non-limiting
matrix of some of the possible combinations between chalcogenide
particles listed for the rows and chalcogenide particles listed for
the columns.
TABLE-US-00005 TABLE V Cu--Se In--Se Ga--Se Cu--In--Se Se Se +
Cu--Se Se + In--Se Se + Ga--Se Se + Cu--In--Se Cu--Se Cu--Se Cu--Se
+ In--Se Cu--Se + Ga--Se Cu--Se + Cu--In--Se In--Se In--Se + Cu--Se
In--Se In--Se + Ga--Se In--Se + Cu--In--Se Ga--Se Ga--Se + Cu--Se
Ga--Se + In--Se Ga--Se Ga--Se + Cu--In--Se Cu--In--Se Cu--In--Se +
Cu--Se Cu--In--Se + In--Se Cu--In--Se + Ga--Se Cu--In--Se
Cu--Ga--Se Cu--Ga--Se + Cu--Se Cu--Ga--Se + In--Se Cu--Ga--Se +
Ga--Se Cu--Ga--Se + Cu--In--Se In--Ga--Se In--Ga--Se + Cu--Se
In--Ga--Se + In--Se In--Ga--Se + Ga--Se In--Ga--Se + Cu--In--Se
Cu--In--Ga--Se Cu--In--Ga--Se + Cu--Se Cu--In--Ga--Se + In--Se
Cu--In--Ga--Se + Ga--Se Cu--In--Ga--Se + Cu--In--Se Cu--Ga--Se
In--Ga--Se Cu--In--Ga--Se Se Se + Cu--Ga--Se Se + In--Ga--Se Se +
Cu--In--Ga--Se Cu--Se Cu--Se + Cu--Ga--Se Cu--Se + In--Ga--Se
Cu--Se + Cu--In--Ga--Se In--Se In--Se + Cu--Ga--Se In--Se +
In--Ga--Se In--Se + Cu--In--Ga--Se Ga--Se Ga--Se + Cu--Ga--Se
Ga--Se + In--Ga--Se Ga--Se + Cu--In--Ga--Se Cu--In--Se Cu--In--Se +
Cu--Ga--Se Cu--In--Se + In--Ga--Se Cu--In--Se + Cu--In--Ga--Se
Cu--Ga--Se Cu--Ga--Se Cu--Ga--Se + In--Ga--Se Cu--Ga--Se +
Cu--In--Ga--Se In--Ga--Se In--Ga--Se + Cu--Ga--Se In--Ga--Se
In--Ga--Se + Cu--In--Ga--Se Cu--In--Ga--Se Cu--In--Ga--Se +
Cu--Ga--Se Cu--In--Ga--Se + In--Ga--Se Cu--In--Ga--Se
Nucleation Layer
Referring now to FIGS. 11A-11C, yet another embodiment of the
present invention using flakes such as but not limited to
nanoflakes will now be described. This embodiment provides a method
for improving crystal growth on the substrate by depositing a thin
group IB-IIIA chalcogenide layer on the substrate to serve as a
nucleation plane for film growth for the precursor layer which is
formed on top of the thin group IB-IIIA chalcogenide layer. This
nucleation layer of a group IB-IIIA chalcogenide may be deposited,
coated, or formed prior to forming the precursor layer. The
nucleation layer may be formed using vacuum or non-vacuum
techniques. The precursor layer formed on top of the nucleation
layer may be formed by a variety of techniques including but not
limited to using an ink containing a plurality of nanoflakes as
described in this application.
FIG. 11A shows that the absorber layer may be formed on a substrate
812, as shown in FIG. 11A. A surface of the substrate 812, may be
coated with a contact layer 814 to promote electrical contact
between the substrate 812 and the absorber layer that is to be
formed on it. By way of example, an aluminum substrate 812 may be
coated with a contact layer 814 of molybdenum. As discussed herein,
forming or disposing a material or layer of material on the
substrate 812 includes disposing or forming such material or layer
on the contact layer 814, if one is used.
As shown in FIG. 11B, a nucleation layer 816 is formed on the
substrate 812. This nucleation layer may comprise of a group
IB-IIIA chalcogenide and may be deposited, coated, or formed prior
to forming the precursor layer. As a nonlimiting example, this may
be a CIGS layer, a Ga--Se layer, any other high-melting
IB-IIIA-chalcogenide layer, or even a thin layer of gallium.
Referring now to FIG. 11C, once the nucleation layer is formed, the
precursor layer 818 may be formed on top of the nucleation layer.
In some embodiments, the nucleation layer and the precursor layer
may be formed simultaneously. The precursor layer 818 may contain
one or more group IB elements and one or more group IIIA elements.
Preferably, the one or more group IB elements include copper. The
one or more group IIIA elements may include indium and/or gallium.
The precursor layer may be formed from a film, e.g., using any of
the techniques described above.
Referring still to FIG. 11C, it should also be understood that the
structure of the alternating nucleation layer and precursor layer
may be repeated in the stack. FIG. 11C show that, optionally,
another nucleation layer 820 (shown in phantom) may be formed over
the precursor layer 818 to continue the structure of alternating
nucleation layer and precursor layer. Another precursor layer 822
may then be formed over the nucleation layer 820 to continue the
layering, which may be repeated as desired. Although not limited to
the following, there may be 2, 3, 4, 5, 6, 7, 8, 9, 10, or more
sets of alternating nucleation layers and precursor layers to build
up the desired qualities. The each set may have different materials
or amounts of materials as compared to other sets in the stack. The
alternating layers may be solution deposited, vacuum deposited or
the like. Different layers may be deposited by different
techniques. In one embodiment, this may involve solution depositing
(or vacuum depositing) a precursor layer (optionally with a desired
Cu-to-In-to-Ga ratio), subsequently adding chalcogen
(solution-based, vacuum-based, or otherwise such as but not limited
to vapor or H2Se, etc. . . . ), optionally heat treating this stack
(during or after introduction of the chalcogen source),
subsequently depositing an additional precursor layer (optionally
with a desired Cu-to-In-to-Ga ratio), and finally heat treating the
final stack (during or after the introduction of additional
chalcogen). The goal is to create planar nucleation so that there
are no holes or areas where the substrate will not be covered by
subsequent film formation and/or crystal growth. Optionally, the
chalcogen source may also be introduced before adding the first
precursor layer containing Cu+In+Ga. It should also be understood
that in some other embodiments, layer 820 may be a chalcogen
containing layer, such as but not limited to a selenium layer, and
be heated with each precursor layer (or at the end after all
precursor layers are formed).
Nucleation Layer by Thermal Gradient
Referring now to FIGS. 12A-12B, it should be understood that a
nucleation layer for use with a nanoflake based precursor material
may also be formed by creating a thermal gradient in the precursor
layer 850. As a nonlimiting example, the nucleation layer 852 may
be formed starting from the upper portion of the precursor layer or
optionally by forming the nucleation layer 854 from a lower portion
of the precursor layer. In one embodiment of the present invention,
the nucleation layer may be viewed as being a layer where an
initial IB-IIIA-VIA compound crystal growth is preferred over
crystal growth in another location of the precursor layer and/or
stacks of precursor layers. The nucleation layer 852 or 854 is
formed by creating a thermal gradient in the precursor layer such
that one portion of the layer reaches a temperature sufficient to
begin crystal growth. The nucleation layer may be in the form a
nucleation plane having a substantially planar configuration to
promote a more even crystal growth across the substrate while
minimizing the formation of pinholes and other anomalies.
As seen in FIG. 12A, in one embodiment of the present invention,
the thermal gradient used to form the nucleation layer 852 may be
created by using a laser 856 to increase only an upper portion of
the precursor layer 850 to a processing temperature. The laser 856
may be pulsed or otherwise controlled to not heat the entire
thickness of the precursor layer to a processing temperature. The
backside 858 of the precursor layer and the substrate 860
supporting it may be in contact with cooled rollers 862, cooled
planar contact surface, or cooled drums which provide an external
source of cooling to prevent lower portions of the layer from
reaching processing temperature. Cooled gas 864 may also be
provided on one side of the substrate and adjacent portion of the
precursor layer to lower the temperature of the precursor layer
below a processing temperature where nucleation to the final
IB-IIIA-chalcogenide compound begins. It should be understood that
other devices may be used to heat the upper portion of the
precursor layer such as but not limited pulsed thermal processing,
plasma heating, or heating via IR lamps.
As seen in FIG. 12B, in another embodiment of the present
invention, the nucleation layer 854 may be formed on a lower
portion of the precursor layer 850 using techniques similar to
those described above. Since the substrate 860 used with the
present invention may be selected to be thermally conductive,
underside heating of the substrate will also cause heating of a
lower portion of the precursor layer. The nucleation plane will
then form along the bottom portion of the lower portion. The upper
portion of the precursor layer may be cooled by a variety of
techniques such as, but not limited to, cooled gas, cooled rollers,
or other cooling device.
After the nucleation layer has formed, preferably consisting of
material identical or close to the final IB-IIIA-chalcogenide
compound, the entire precursor layer, or optionally only those
portions of the precursor layer that remain more or less
unprocessed, will be heated to the processing temperature so that
the remaining material will begin to convert into the final
IB-IIIA-chalcogenide compound in contact with the nucleation layer.
The nucleation layer guides the crystal formation and minimizes the
possibility of areas of the substrate forming pinhole or having
other abnormalities due to uneven crystal formation.
It should be understood that in addition to the aforementioned, the
temperature may also vary over different time periods of precursor
layer processing. As a nonlimiting example, the heating may occur
at a first temperature over an initial processing time period and
proceed to other temperatures for subsequent time periods of the
processing. Optionally, the method may include intentionally
creating one or more temperature dips so that, as a nonlimiting
example, the method comprises heating, cooling, heating, and
subsequent cooling. In one embodiment of the present invention,
this may involve lowering the temperature from between about
50.degree. C. to about 200.degree. C. from a temperature in an
initial time period.
Nucleation Layer by Chemical Gradient
Referring now to FIGS. 13A-13F, a still further method of forming a
nucleation layer with a nanoflake precursor material according to
the present invention will be described in more detail. In this
embodiment of the present invention, the composition of the layers
of precursor material may be selected so that crystal formation
begins sooner in some layers than in other layers. It should be
understood that the various methods of forming a nucleation layer
may be combined together to facilitate layer formation. As a
nonlimiting example, the thermal gradient and chemical gradient
methods may be combined to facilitate nucleation layer formation.
It is imagined that single or multiple combinations of using a
thermal gradient, chemical gradient, and/or thin film nucleation
layer may be combined.
Referring now to FIG. 13A, the absorber layer may be formed on a
substrate 912, as shown in FIG. 13A. A surface of the substrate
912, may be coated with a contact layer 914 to promote electrical
contact between the substrate 912 and the absorber layer that is to
be formed on it. By way of example, an aluminum substrate 912 may
be coated with a contact layer 914 of molybdenum. As discussed
herein, forming or disposing a material or layer of material on the
substrate 912 includes disposing or forming such material or layer
on the contact layer 914, if one is used. Optionally, it should
also be understood that a layer 915 may also be formed on top of
contact layer 914 and/or directly on substrate 912. This layer may
be solution coated, evaporated, and/or deposited using vacuum based
techniques. Although not limited to the following, the layer 915
may have a thickness less than that of the precursor layer 916. In
one nonlimiting example, the layer may be between about 1 to about
100 nm in thickness. The layer 915 may be comprised of various
materials including but not limited to at least one of the
following: a group IB element, a group IIIA element, a group VIA
element, a group IA element (new style: group 1), a binary and/or
multinary alloy of any of the preceding elements, a solid solution
of any of the preceding elements, copper, indium, gallium,
selenium, copper indium, copper gallium, indium gallium, sodium, a
sodium compound, sodium fluoride, sodium indium sulfide, copper
selenide, copper sulfide, indium selenide, indium sulfide, gallium
selenide, gallium sulfide, copper indium selenide, copper indium
sulfide, copper gallium selenide, copper gallium sulfide, indium
gallium selenide, indium gallium sulfide, copper indium gallium
selenide, and/or copper indium gallium sulfide.
As shown in FIG. 13B, a precursor layer 916 is formed on the
substrate. The precursor layer 916 contains one or more group IB
elements and one or more group IIIA elements. Preferably, the one
or more group IB elements include copper. The one or more group
IIIA elements may include indium and/or gallium. The precursor
layer may be formed using any of the techniques described above. In
one embodiment, the precursor layer contains no oxygen other than
those unavoidably present as impurities or incidentally present in
components of the film other than the nanoflakes themselves.
Although the precursor layer 916 is preferably formed using
non-vacuum methods, it should be understood that it may optionally
be formed by other means, such as evaporation, sputtering, ALD,
etc. By way of example, the precursor layer 916 may be an
oxygen-free compound containing copper, indium and gallium. In one
embodiment, the non-vacuum system operates at pressures above about
3.2 kPa (24 Torr). Optionally, it should also be understood that a
layer 917 may also be formed on top of precursor layer 916. It
should be understood that the stack may have both layers 915 and
917, only one of the layers, or none of the layers. Although not
limited to the following, the layer 917 may have a thickness less
than that of the precursor layer 916. In one nonlimiting example,
the layer may be between about 1 to about 100 nm in thickness. The
layer 917 may be comprised of various materials including but not
limited to at least one of the following: a group IB element, a
group IIIA element, a group VIA element, a group IA element (new
style: group 1), a binary and/or multinary alloy of any of the
preceding elements, a solid solution of any of the preceding
elements, copper, indium, gallium, selenium, copper indium, copper
gallium, indium gallium, sodium, a sodium compound, sodium
fluoride, sodium indium sulfide, copper selenide, copper sulfide,
indium selenide, indium sulfide, gallium selenide, gallium sulfide,
copper indium selenide, copper indium sulfide, copper gallium
selenide, copper gallium sulfide, indium gallium selenide, indium
gallium sulfide, copper indium gallium selenide, and/or copper
indium gallium sulfide.
Referring now to FIG. 13C, a second precursor layer 918 of a second
precursor material may optionally be applied on top of the
precursor layer. The second precursor material may have an overall
composition that is more chalcogen-rich than the first precursor
material in precursor layer 916. As a nonlimiting example, this
allows for creating a gradient of available Se by doing two
coatings (preferably with only one heating process of the stack
after depositing both precursor layer coatings) where the first
coating contains selenides with relatively less selenium in it (but
still enough) than the second. For instance, the precursor for the
first coating can contain Cu.sub.xSe.sub.y where the x is larger
than in the second coating. Or it may contain a mix of
Cu.sub.xSe.sub.y particles wherein there is a larger concentration
(by weight) of the selenide particles with the large x. In this
current embodiment, each layer has preferably the targeted
stoichiometry because the C/I/G ratios are kept the same for each
precursor layer. Again, although this second precursor layer 918 is
preferably formed using non-vacuum methods, it should be understood
that it may optionally be formed by other means, such as
evaporation, sputtering, ALD, etc. . . . .
The rationale behind the use of chalcogen grading, or more general
a grading in melting temperature from bottom to top, is to control
the relative rate of crystallization in depth and to have the
crystallization happen e.g. faster at the bottom portion of the
stack of precursor layers than at the top of the stack of precursor
layers. The additional rationale is that the common grain structure
in typical efficient solution-deposited CIGS cells where the cells
have large grains at the top of the photoactive film, which is the
part of the photoactive film that is mainly photoactive, and small
grains at the back, still have appreciable power conversion
efficiencies. It should be understood that in other embodiments, a
plurality of many layers of different precursor materials may be
used to build up a desired gradient of chalcogen, or more general,
a desired gradient in melting temperature and/or subsequent
solidification into the final IB-IIIA-chalcogenide compound, or
even more general, a desired gradient in melting and/or subsequent
solidification into the final IB-IIIA-chalcogenide compound, either
due to creating a chemical (compositional) gradient, and/or a
thermal gradient, in the resulting film. As nonlimiting examples,
the present invention may use particles and/or microflakes and/or
nanoflakes with different melting points such as but not limited to
lower melting materials Se, In.sub.4Se.sub.3, Ga, and
Cu.sub.1Se.sub.1, compared to higher melting materials
In.sub.2Se.sub.3, Cu.sub.2Se.
Referring now to FIG. 13C, heat 920 is applied to heat the first
precursor layer 916 and the second precursor layer 918 into a group
IB-IIIA compound film 922. The heat 920 may be supplied in a rapid
thermal annealing process, e.g., as described above. Specifically,
the substrate 912 and precursor layer(s) 916 and/or 918 may be
heated from an ambient temperature to a plateau temperature range
of between about 200.degree. C. and about 600.degree. C. The
temperature is maintained in the plateau range for a period of time
ranging between about a fraction of a second to about 60 minutes,
and subsequently reduced.
Optionally, as shown in FIG. 13D, it should be understood that a
layer 924 containing elemental chalcogen particles may be applied
over the precursor layers 916 and/or 918 prior to heating. Of
course, if the material stack does not include a second precursor
layer, the layer 924 is formed over the precursor layer 916. By way
of example, and without loss of generality, the chalcogen particles
may be particles of selenium, sulfur or tellurium. Such particles
may be fabricated as described above. The chalcogen particles in
the layer 924 may be between about 1 nanometer and about 25 microns
in size, preferably between 50 nm and 500 nm. The chalcogen
particles may be mixed with solvents, carriers, dispersants etc. to
prepare an ink or a paste that is suitable for wet deposition over
the precursor layer 916 and/or 918 to form the layer 924.
Alternatively, the chalcogen particles may be prepared for
deposition on a substrate through dry processes to form the layer
924.
Optionally, as shown in FIG. 13E, a layer 926 containing an
additional chalcogen source, and/or an atmosphere containing a
chalcogen source, may optionally be applied to layer 922,
particularly if layer 924 was not applied in FIG. 13D. Heat 928 may
optionally be applied to layer 922 and the layer 926 and/or
atmosphere containing the chalcogen source to heat them to a
temperature sufficient to melt the chalcogen source and to react
the chalcogen source with the group IB element and group IIIA
elements in the precursor layer 922. The heat 928 may be applied in
a rapid thermal annealing process, e.g., as described above. The
reaction of the chalcogen source with the group IB and IIIA
elements forms a compound film 930 of a group IB-IIIA-chalcogenide
compound as shown in FIG. 13F. Preferably, the group
IB-IIIA-chalcogenide compound is of the form
Cu.sub.zIn.sub.1-xGa.sub.xSe.sub.2(1-y)S.sub.2y, where
0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and
0.5.ltoreq.y.ltoreq.1.5.
Referring still to FIGS. 13A-13F, it should be understood that
sodium may also be used with the precursor material to improve the
qualities of the resulting film. In a first method, as discussed in
regards to FIGS. 13A and 13B, one or more layers of a sodium
containing material may be formed above and/or below the precursor
layer 916. The formation may occur by solution coating and/or other
techniques such as but not limited to sputtering, evaporation, CBD,
electroplating, sol-gel based coating, spray coating, chemical
vapor deposition (CVD), physical vapor deposition (PVD), atomic
layer deposition (ALD), and the like.
Optionally, in a second method, sodium may also be introduced into
the stack by sodium doping the nanoflakes and/or particles in the
precursor layer 916. As a nonlimiting example, the nanoflakes
and/or other particles in the precursor layer 916 may be a sodium
containing material such as, but not limited to, Cu--Na, In--Na,
Ga--Na, Cu--In--Na, Cu--Ga--Na, In--Ga--Na, Na--Se, Cu--Se--Na,
In--Se--Na, Ga--Se--Na, Cu--In--Se--Na, Cu--Ga--Se--Na,
In--Ga--Se--Na, Cu--In--Ga--Se--Na, Na--S, Cu--S--Na, In--S--Na,
Ga--S--Na, Cu--In--S--Na, Cu--Ga--S--Na, In--Ga--S--Na, and/or
Cu--In--Ga--S--Na. In one embodiment of the present invention, the
amount of sodium in the nanoflakes and/or other particles may be
less than about 1 at. % or less. In another embodiment, the amount
of sodium may be about 0.5 at. % or less. In yet another
embodiment, the amount of sodium may be about 0.1 at. % or less. It
should be understood that the doped particles and/or flakes may be
made by a variety of methods including milling feedstock material
with the sodium containing material and/or elemental sodium.
Optionally, in a third method, sodium may be incorporated into the
ink itself, regardless of the type of particle, nanoparticle,
microflake, and/or nanoflakes dispersed in the ink. As a
nonlimiting example, the ink may include nanoflakes (Na doped or
undoped) and a sodium compound with an organic counter-ion (such as
but not limited to sodium acetate) and/or a sodium compound with an
inorganic counter-ion (such as but not limited to sodium sulfide).
It should be understood that sodium compounds added into the ink
(as a separate compound), might be present as particles (e.g.
nanoparticles), or dissolved. The sodium may be in "aggregate" form
of the sodium compound (e.g. dispersed particles), and the
"molecularly dissolved" form.
None of the three aforementioned methods are mutually exclusive and
may be applied singly or in any single or multiple combination to
provide the desired amount of sodium to the stack containing the
precursor material. Additionally, sodium and/or a sodium containing
compound may also be added to the substrate (e.g. into the
molybdenum target). Also, sodium-containing layers may be formed in
between one or more precursor layers if multiple precursor layers
(using the same or different materials) are used. It should also be
understood that the source of the sodium is not limited to those
materials previously listed. As a nonlimiting example, basically,
any deprotonated alcohol where the proton is replaced by sodium,
any deprotonated organic and inorganic acid, the sodium salt of the
(deprotonated) acid, sodium hydroxide, sodium acetate, and the
sodium salts of the following acids: butanoic acid, hexanoic acid,
octanoic acid, decanoic acid, dodecanoic acid, tetradecanoic acid,
hexadecanoic acid, 9-hexadecenoic acid, octadecanoic acid,
9-octadecenoic acid, 11-octadecenoic acid, 9,12-octadecadienoic
acid, 9,12,15-octadecatrienoic acid, and/or 6,9,12-octadecatrienoic
acid.
Optionally, as seen in FIG. 13F, it should also be understood that
sodium and/or a sodium compound may be added to the processed
chalcogenide film after the precursor layer has been heated or
otherwise processed. This embodiment of the present invention thus
modifies the film after CIGS formation. With sodium, carrier trap
levels associated with the grain boundaries are reduced, permitting
improved electronic properties in the film. A variety of sodium
containing materials such as those listed above may be deposited as
layer 932 onto the processed film and then annealed to treat the
CIGS film.
Additionally, the sodium material may be combined with other
elements that can provide a bandgap widening effect. Two elements
which would achieve this include gallium and sulfur. The use of one
or more of these elements, in addition to sodium, may further
improve the quality of the absorber layer. The use of a sodium
compound such as but not limited to Na.sub.2S, NaInS.sub.2, or the
like provides both Na and S to the film and could be driven in with
an anneal such as but not limited to an RTA step to provide a layer
with a bandgap different from the bandgap of the unmodified CIGS
layer or film.
Referring now to FIG. 14, embodiments of the invention may be
compatible with roll-to-roll manufacturing. Specifically, in a
roll-to-roll manufacturing system 1000 a flexible substrate 1001,
e.g., aluminum foil travels from a supply roll 1002 to a take-up
roll 1004. In between the supply and take-up rolls, the substrate
1001 passes a number of applicators 1006A, 1006B, 1006C, e.g.
microgravure rollers and heater units 1008A, 1008B, 1008C. Each
applicator deposits a different layer or sub-layer of a
photovoltaic device active layer, e.g., as described above. The
heater units are used to anneal the different sub-layers. In the
example depicted in FIG. 14, applicators 1006A and 1006B may be
applied different sub-layers of a precursor layer (such as
precursor layer 106, precursor layer 916, or precursor layer 918).
Heater units 1008A and 1008B may anneal each sub-layer before the
next sub-layer is deposited. Alternatively, both sub-layers may be
annealed at the same time. Applicator 1006C may apply a layer of
material containing chalcogen particles as described above. Heater
unit 1008C heats the chalcogen layer and precursor layer as
described above. Note that it is also possible to deposit the
precursor layer (or sub-layers) then deposit the
chalcogen-containing layer and then heat all three layers together
to form the IB-IIIA-chalcogenide compound film used for the
photovoltaic absorber layer.
The total number of printing steps can be modified to construct
absorber layers with bandgaps of differential gradation. For
example, additional layers (fourth, fifth, sixth, and so forth) can
be printed (and optionally annealed between printing steps) to
create an even more finely-graded bandgap within the absorber
layer. Alternatively, fewer films (e.g. double printing) can also
be printed to create a less finely-graded bandgap. For any of the
above embodiments, it is possible to have different amounts of
chalcogen in each layer as well to vary crystal growth that may be
influenced by the amount of chalcogen present.
Additionally, it should be understood that any number of
combinations of flake and non-flake particles may be used according
to the present invention in the various layers. As a nonlimiting
example, the combinations may include but are not limited to:
TABLE-US-00006 TABLE VI Combination 1 1) chalcogenide (flake) +
non-chalcogenide (flake) Combination 2 2) chalcogenide (flake) +
non-chalcogenide (non-flake) Combination 3 3) chalcogenide
(non-flake) + non-chalcogenide (flake) Combination 4 4)
chalcogenide (non-flake) + non-chalcogenide (non-flake) Combination
5 5) chalcogenide (flake) + chalcogenide (flake) Combination 6 6)
chalcogenide (flake) + chalcogenide (non-flake) Combination 7 7)
chalcogenide (non-flake) + chalcogenide (non-flake) Combination 8
8) non-chalcogenide (flake) + non-chalcogenide (flake) Combination
9 9) non-chalcogenide (flake) + non-chalcogenide (non-flake)
Combination 10 10) non-chalcogenide (non-flake) + non-chalcogenide
(non-flake)
Although not limited to the following, the chalcogenide and
non-chalcogenide materials may be selected from any of those listed
in the Tables IV and V.
Reduced Melting Temperature
In yet another embodiment of the present invention, the ratio of
elements within a particle or flake may be varied to produce more
desired material properties. In one nonlimiting example, this
embodiment comprises using desired stoichiometric ratios of
elements so that the particles used in the ink have a reduced
melting temperature. By way of nonlimiting example, for a group IB
chalcogenide, the amount of the group IB element and the amount of
the chalcogen is controlled to move the resulting material to a
portion of the phase diagram that has a reduced melting
temperature. Thus for Cu.sub.xSe.sub.y, the values for x and y are
selected to create a material with reduced melting temperature as
determined by reference to a phase diagram for the material. Phase
diagrams for the following materials may be found in ASM Handbook,
Volume 3 Alloy Phase Diagrams (1992) by ASM International and fully
incorporated herein by reference for all purposes. Some specific
examples may be found on pages 2-168, 2-170, 2-176, 2-178, 2-208,
2-214, 2-257, and/or 2-259.
As a nonlimiting example, copper selenide has multiple melting
temperatures depending on the ratio of copper to selenium in the
material. Everything more Se-rich (i.e. right on the binary phase
diagram with pure Cu on the left and pure Se on the right) of the
solid-solution Cu.sub.2-xSe will create liquid selenium. Depending
on composition, the melting temperature may be as low as
221.degree. C. (more Se rich than Cu.sub.1Se.sub.2), as low as
332.degree. C. (for compositions between Cu.sub.1Se.sub.1 &
Cu.sub.1Se.sub.2), and as low as 377.degree. C. (for compositions
between Cu.sub.2-xSe and Cu.sub.1Se.sub.1). At 523.degree. C. and
above, the material is all liquid for Cu--Se that is more Se-rich
than the eutectic (.about.57.9 wt.-% Se). For compositions in
between the solid-solution Cu.sub.2-xSe and the eutectic
(.about.57.9 wt.-% Se), it will create a solid solid-solution
Cu.sub.2-xSe and liquid eutectic (.about.57.9 wt.-% Se) at
523.degree. C. and just above.
Another nonlimiting example involves gallium selenide which may
have multiple melting temperatures depending on the ratio of
gallium to selenium in the material. Everything more Se-rich (i.e.
right on the binary phase diagram with pure Ga on the left and pure
Se on the right) than Ga.sub.2Se.sub.3 will create liquid above
220.degree. C., which is mainly pure Se. Making Ga--Se more Se-rich
than Ga.sub.1Se.sub.1 is possible by making e.g. the compound
Ga.sub.2Se.sub.3 (or anything more Se-rich than Ga.sub.1Se.sub.1),
but only when adding other sources of selenium when working with a
composition in between or equal to Ga.sub.1Se.sub.1 and
Ga.sub.2Se.sub.3 (being an additional source of selenium or Se-rich
Cu--Se) will liquefy the Ga--Se at processing temperature. Hence,
an additional source of Se may be provided to facilitate the
creation of a liquid involving gallium selenide.
Yet another nonlimiting example involves indium selenide which may
have multiple melting temperatures depending on the ratio of indium
to selenium in the material. Everything more Se-rich (i.e. right on
the binary phase diagram with pure In on the left and pure Se on
the right) than In.sub.2Se.sub.3 will create liquid above
220.degree. C., which is mainly pure Se. Making In--Se more Se-rich
than In.sub.1Se.sub.1 would create liquid for In.sub.2Se.sub.3 and
also for In.sub.6Se.sub.7 (or a bulk composition in between
In.sub.1Se.sub.1 and Se), but when dealing with a composition
between or equal to In.sub.1Se.sub.1 and In.sub.2Se.sub.3, only by
adding other sources of selenium (being an additional source of
selenium or Se-rich Cu--Se) the In--Se will liquefy at processing
temperature. Optionally for In--Se, there is another way of
creating more liquid by going in the "other" direction and using
compositions that are less Se-rich (i.e. left on the binary phase
diagram). By using a material composition between pure In and
In.sub.4Se.sub.3 (or between In and In.sub.1Se.sub.1 or between In
and In6Se7 depending on temperature), pure liquid In can be created
at 156.degree. C. and even more liquid at 520.degree. C. (or at a
higher temperature when going more Se-rich moving from the eutectic
point of .about.24.0 wt.-% Se up to In.sub.1Se.sub.1). Basically,
for a bulk composition less Se-rich than the In--Se eutectic
(.about.24.0 wt.-% Se), all the In--Se will turn into a liquid at
520.degree. C. Of course, with these type of Se poor materials, one
of the other particles (such as but not limited to Cu.sub.1Se.sub.2
and/or Se) will be needed to increase the Se content, or another
source of Se.
Accordingly, liquid may be created at our processing temperature
by: 1) adding a separate source of selenium, 2) using Cu--Se more
Se-rich than Cu.sub.2-xSe, 3) using Ga-emulsion (or In--Ga
emulsion), or In (in an air free environment), or 4) using In--Se
less Se-rich than In.sub.1Se.sub.1 though this may also require an
air free environment. When copper selenide is used, the composition
may be Cu.sub.xSe.sub.y, wherein x is in the range of about 2 to
about 1 and y is in the range of about 1 to about 2. When indium
selenide is used, the composition may be In.sub.xSe.sub.y, wherein
x is in the range of about 1 to about 6 and y is in the range of
about 0 to about 7. When gallium selenide is used, the composition
may be Ga.sub.xSe.sub.y, wherein x is in the range of about 1 to
about 2 and y is in the range of about 1 to about 3.
It should be understood that adding a separate source of selenium
will make the composition behave initially as more Se-rich at the
interface of the selenide particle and the liquid selenium at the
processing temperature.
Additional Chalcogen
Any of the methods described herein may be further optimized by
using, prior to, during, or after the solution deposition and/or
heating of one or more of the precursor layers, any combination of
(1) any chalcogen source that can be solution-deposited, e.g. a Se
or S nano- or micron-sized powder mixed into the precursor layers
or deposited as a separate layer, (2) chalcogen (e.g., Se or S)
evaporation, (3) an H.sub.2Se (H.sub.2S) atmosphere, (4) a
chalcogen (e.g., Se or S) atmosphere, (5) an H.sub.2 atmosphere,
(6) an organo-selenium atmosphere, e.g. diethylselenide or another
organo-metallic material, (7) another reducing atmosphere, e.g. CO,
and a (8) heat treatment. The stoichiometric ratio of microflakes
to extra chalcogen, given as Se/(Cu+In+Ga+Se) may be in the range
of about 0 to about 1000.
For example as shown in FIG. 15A, a layer 1018 containing elemental
chalcogen particles 1017 over the precursor layer 1016. By way of
example, and without loss of generality, the chalcogen particles
may be particles of selenium, sulfur or tellurium. As shown in FIG.
15B, heat 1019 is applied to the precursor layer 1016 and the layer
1018 containing the chalcogen particles to heat them to a
temperature sufficient to melt the chalcogen particles 1017 and to
react the chalcogen particles 1017 with the group IB element and
group IIIA elements in the precursor layer 1016. The reaction of
the chalcogen particles 1017 with the group IB and IIIA elements
forms a compound film 1810 of a group IB-IIIA-chalcogenide compound
as shown in FIG. 15C. Optionally, the group IB-IIIA-chalcogenide
compound is of the form
Cu.sub.zIn.sub.1-xGa.sub.xSe.sub.2(1-y)S.sub.y, where
0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and
0.5.ltoreq.z.ltoreq.1.5.
If the chalcogen particles 1017 melt at a relatively low
temperature (e.g., 220.degree. C. for Se, 120.degree. C. for S) the
chalcogen is already in a liquid state and makes good contact with
the group IB and IIIA nanoparticles in the precursor layer 1016. If
the precursor layer 1016 and molten chalcogen are then heated
sufficiently (e.g., at about 375.degree. C.) the chalcogen reacts
with the group IB and IIIA elements in the precursor layer 1016 to
form the desired IB-IIIA-chalcogenide material in the compound film
1810. As one nonlimiting example, the precursor layer is between
about 10 nm and about 5000 nm thick. In other embodiments, the
precursor layer may be between about 4.0 to about 0.5 microns
thick.
There are a number of different techniques for forming the IB-IIIA
precursor layer 1016. For example, the precursor layer 1016 may be
formed from a nanoparticulate film including nanoparticles
containing the desired group IB and IIIA elements. The
nanoparticles may be a mixture elemental nanoparticles, i.e.,
nanoparticles having only a single atomic species. Alternatively,
the nanoparticles may be binary nanoparticles, e.g., Cu--In,
In--Ga, or Cu--Ga or ternary particles, such as, but not limited
to, Cu--In--Ga, or quaternary particles. Such nanoparticles may be
obtained, e.g., by ball milling a commercially available powder of
the desired elemental, binary or ternary material. These
nanoparticles may be between about 0.1 nanometer and about 500
nanometers in size.
One of the advantages of the use of nanoparticle-based dispersions
is that it is possible to vary the concentration of the elements
within the compound film 1810 either by building the precursor
layer in a sequence of sub-layers or by directly varying the
relative concentrations in the precursor layer 1016. The relative
elemental concentration of the nanoparticles that make up the ink
for each sub-layer may be varied. Thus, for example, the
concentration of gallium within the absorber layer may be varied as
a function of depth within the absorber layer.
The layer 1018 containing the chalcogen particles 1017 may be
disposed over the nanoparticulate film and the nanoparticulate film
(or one or more of its constituent sub-layers) may be subsequently
heated in conjunction with heating the chalcogen particles 1017.
Alternatively, the nanoparticulate film may be heated to form the
precursor layer 1016 before disposing the layer 1018 containing
elemental chalcogen particles 1017 over precursor layer 1016.
Additional disclosure on depositing chalcogen material may be found
in co-pending U.S. patent application Ser. No. 11/361,522 filed
Feb. 23, 2006 and fully incorporated herein by reference for all
purposes.
Referring now to FIG. 15E, it should be understood that any of the
foregoing may also be used in a chalcogen vapor environment. In
this embodiment for use with a nanoflake precursor material, it
should be understood that overpressure from chalcogen vapor is used
to provide a chalcogen atmosphere to improve processing of the film
and crystal growth. FIG. 15A shows a chamber 1050 with a substrate
1052 having a contact layer 1054 and a precursor layer 1056. Extra
sources 1058 of chalcogen are included in the chamber and are
brought to a temperature to generate chalcogen vapor as indicated
by lines 1060. In one embodiment of the present invention, the
chalcogen vapor is provided to have a partial pressure of the
chalcogen present in the atmosphere greater than or equal to the
vapor pressure of chalcogen that would be required to maintain a
partial chalcogen pressure at the processing temperature and
processing pressure to minimize loss of chalcogen from the
precursor layer, and if desired, provide the precursor layer with
additional chalcogen. The partial pressure is determined in part on
the temperature that the chamber 1050 or the precursor layer 1056
is at. It should also be understood that the chalcogen vapor is
used in the chamber 1050 at a non-vacuum pressure. In one
embodiment, the pressure in the chamber is at about atmospheric
pressure. Per the ideal gas law PV=nRT, it should be understood
that the temperature influences the vapor pressure. In one
embodiment, this chalcogen vapor may be provided by using a
partially or fully enclosed chamber with a chalcogen source 1062
therein or coupled to the chamber. In another embodiment using a
more open chamber, the chalcogen atmosphere may be provided by
supplying a source producing a chalcogen vapor. The chalcogen vapor
may serve to help keep the chalcogen in the film or to provide the
chalcogen to covert the precursor layer. Thus, the chalcogen vapor
may or may not be used to provide excess chalcogen. In some
embodiments, this may serve more to keep the chalcogen present in
the film than to provide more chalcogen into the film. Optionally,
this maybe used as a chalcogen that is introduced into an otherwise
chalcogen free or selenium free precursor layer. The exposure to
chalcogen vapor may occur in a non-vacuum environment. The exposure
to chalcogen vapor may occur at atmospheric pressure. These
conditions may be applicable to any of the embodiments described
herein. The chalcogen may be carried into the chamber by a carrier
gas. The carrier gas may be an inert gas such as nitrogen, argon,
or the like. This chalcogen atmosphere system may be adapted for
use in a roll-to-roll system.
Referring now to FIG. 15F, it shown that the present invention may
be adopted for use with a roll-to-roll system where the substrate
1070 carrying the precursor layer may be flexible and configured as
rolls 1072 and 1074. The chamber 1076 may be at vacuum or
non-vacuum pressures. The chamber 1076 may be designed to
incorporate a differential valve design to minimize the loss of
chalcogen vapor at the chamber entry and chamber exit points of the
roll-to-roll substrate 1070.
Referring now to FIG. 15G, yet another embodiment of the present
invention uses a chamber 1090 of sufficient size to hold the entire
substrate, including any rolls 1072 or 1074 associated with using a
roll-to-roll configuration.
Referring now to FIG. 16A, it should also be understood that the
embodiments of the present invention may also be used on a rigid
substrate 1100. By way of nonlimiting example, the rigid substrate
1100 may be glass, solar glass, low-iron glass, green glass,
soda-lime glass, steel, stainless steel, aluminum, polymer,
ceramic, coated polymer, or other rigid material suitable for use
as a solar cell or solar module substrate. A high speed
pick-and-place robot 1102 may be used to move rigid substrates 1100
onto a processing area from a stack or other storage area. In FIG.
16A, the substrates 1100 are placed on a conveyor belt which then
moves them through the various processing chambers. Optionally, the
substrates 1100 may have already undergone some processing by the
time and may already include a precursor layer on the substrate
1100. Other embodiments of the invention may form the precursor
layer as the substrate 1100 passes through the chamber 1106.
FIG. 16B shows another embodiment of the present system where a
pick-and-place robot 1110 is used to position a plurality of rigid
substrates on a carrier device 1112 which may then be moved to a
processing area as indicated by arrow 1114. This allows for
multiple substrates 1100 to be loaded before they are all moved
together to undergo processing.
Referring now to FIG. 17, yet another embodiment of the present
invention will now be described. In one embodiment, the particles
used to form a precursor layer 1500 may include particles that are
inter-metallic particles 1502. In one embodiment, an inter-metallic
material is a material containing at least two elements, wherein
the amount of one element in the intermetallic material is less
than about 50 molar percent of the total molar amount of the
intermetallic material and/or the total molar amount of that one
element in a precursor material. The amount of the second element
is variable and may range from less than about 50 molar percent to
about 50 or more molar percent of the inter-metallic material
and/or the total molar amount of that one element in a precursor
material. Alternatively, inter-metallic phase materials may be
comprised of two or more metals where the materials are admixed in
a ratio between the upper bound of the terminal solid solution and
an alloy comprised of about 50% of one of the elements in the
inter-metallic material. The particle distribution shown in the
enlarged view of FIG. 10 is purely exemplary and is nonlimiting. It
should be understood that some embodiments may have particles that
all contain inter-metallic materials, mixture of metallic and
inter-metallic materials, metallic particles and inter-metallic
particles, or combinations thereof.
It should be understood that inter-metallic phase materials are
compounds and/or intermediate solid solutions containing two or
more metals, which have characteristic properties and crystal
structures different from those of either the pure metals or the
terminal solid solutions. Inter-metallic phase materials arise from
the diffusion of one material into another via crystal lattice
vacancies made available by defects, contamination, impurities,
grain boundaries, and mechanical stress. Upon two or more metals
diffusing into one another, intermediate metallic species are
created that are combinations of the two materials. Sub-types of
intermetallic compounds include both electron and interstitial
compounds.
Electron compounds arise if two or more mixed metals are of
different crystal structure, valency, or electropositivity relative
to one another; examples include but are not limited to copper
selenide, gallium selenide, indium selenide, copper telluride,
gallium telluride, indium telluride, and similar and/or related
materials and/or blends or mixtures of these materials.
Interstitial compounds arise from the admixture of metals or metals
and non-metallic elements, with atomic sizes that are similar
enough to allow the formation of interstitial crystal structures,
where the atoms of one material fit into the spaces between the
atoms of another material. For inter-metallic materials where each
material is of a single crystal phase, two materials typically
exhibit two diffraction peaks, each representative of each
individual material, superimposed onto the same spectra. Thus
inter-metallic compounds typically contain the crystal structures
of both materials contained within the same volume. Examples
include but are not limited to Cu--Ga, Cu--In, and similar and/or
related materials and/or blends or mixtures of these materials,
where the compositional ratio of each element to the other places
that material in a region of its phase diagram other than that of
the terminal solid solution.
Inter-metallic materials are useful in the formation of precursor
materials for CIGS photovoltaic devices in that metals interspersed
in a highly homogenous and uniform manner amongst one another, and
where each material is present in a substantially similar amount
relative to the other, thus allowing for rapid reaction kinetics
leading to high quality absorber films that are substantially
uniform in all three dimensions and at the nano-, micro, and
meso-scales.
In the absence of the addition of indium nanoparticles, which are
difficult to synthesize and handle, terminal solid solutions do not
readily allow a sufficiently large range of precursor materials to
be incorporated into a precursor film in the correct ratio (e.g.
Cu/(In+Ga)=0.85) to provide for the formation of a highly light
absorbing, photoactive absorber layer. Furthermore, terminal solid
solutions may have mechanical properties that differ from those of
inter-metallic materials and/or intermediate solid solutions (solid
solutions between a terminal solid solution and/or element). As a
nonlimiting example, some terminal solid solutions are not brittle
enough to be milled for size reduction. Other embodiments may be
too hard to be milled. The use of inter-metallic materials and/or
intermediate solid solutions can address some of these
drawbacks.
The advantages of particles 1502 having an inter-metallic phase are
multi-fold. As a nonlimiting example, a precursor material suitable
for use in a thin film solar cell may contain group IB and group
IIIA elements such as copper and indium, respectively. If an
inter-metallic phase of Cu--In is used such as Cu.sub.1In.sub.2,
then Indium is part of an In-rich Cu material and not added as pure
indium. Adding pure indium as a metallic particle is challenging
due to the difficulty in achieving In particle synthesis with high
yield, small and narrow nanoparticle size distribution, and
requiring particle size discrimination, which adds further cost.
Using intermetallic In-rich Cu particles avoids pure elemental In
as a precursor material. Additionally, because the inter-metallic
material is Cu poor, this also advantageously allows Cu to be added
separately to achieve precisely the amount of Cu desired in the
precursor material. The Cu is not tied to the ratio fixed in alloys
or solid solutions that can be created by Cu and In. The
intermetallic material and the amount of Cu can be fine tuned as
desired to reach a desired stoichiometric ratio. Ball milling of
these particles results in no need for particle size
discrimination, which decreases cost and improves the throughput of
the material production process.
In some specific embodiments of the present invention, having an
inter-metallic material provides a broader range of flexibility.
Since economically manufacturing elemental indium particles is
difficult, it would be advantageous to have an indium-source that
is more economically interesting. Additionally, it would be
advantageous if this indium source still allows varying both the
Cu/(In+Ga) and Ga/(In+Ga) in the layer independently of each other.
As one nonlimiting example, a distinction can be made between
Cu.sub.11In.sub.9 and Cu.sub.1In.sub.2 with an intermetallic phase.
This particularly true if only one layer of precursor material is
used. If, for this particular example, if indium is only provided
by Cu.sub.11In.sub.9, there is more restriction what stoichiometric
ratio can be created in a final group IB-IIIA-VIA compound. With
Cu.sub.1In.sub.2 as the only indium source, however, there is much
greater range of ratio can be created in a final group IB-IIIA-VIA
compound. Cu.sub.1In.sub.2 allows you to vary both the Cu/(In+Ga)
and Ga/(In+Ga) independently in a broad range, whereas
Cu.sub.11In.sub.9 does not. For instance, Cu.sub.11In.sub.9 does
only allow for Ga/(In+Ga)=0.25 with Cu/(In+Ga)>0.92. Yet another
example, Cu.sub.11In.sub.9 does only allow for Ga/(In+Ga)=0.20 with
Cu/(In+Ga)>0.98. Yet another example, Cu.sub.11In.sub.9 does
only allow for Ga/(In+Ga)=0.15 with Cu/(In+Ga)>1.04. Thus for an
intermetallic material, particularly when the intermetallic
material is a sole source of one of the elements in the final
compound, the final compound may be created with stoichiometric
ratios that more broadly explore the bounds of Cu/(In+Ga) with a
compositional range of about 0.7 to about 1.0, and Ga/(In+Ga) with
a compositional range of about 0.05 to about 0.3 In other
embodiments, Cu/(In+Ga) compositional range may be about 0.01 to
about 1.0. In other embodiments, the Cu/(In+Ga) compositional range
may be about 0.01 to about 1.1. In other embodiments, the
Cu/(In+Ga) compositional range may be about 0.01 to about 1.5. This
typically results in additional Cu.sub.xSe.sub.y which we might be
able to remove afterwards if it is at the top surface. It should be
understood that these ratios may apply to any of the above
embodiments described herein.
Furthermore, it should be understood that during processing, an
intermetallic material may create more liquid than other compounds.
As a nonlimiting example, Cu.sub.1In.sub.2 will form more liquid
when heated during processing than Cu11In9. More liquid promotes
more atomic intermixing since it easier for material to move and
mix while in a liquid stage.
Additionally, there are specific advantages for particular types of
inter-metallic particles such as, but not limited to,
Cu.sub.1In.sub.2. Cu.sub.1In.sub.2 is a material that is
metastable. The material is more prone to decomposition, which
advantageously for the present invention, will increase the rate of
reaction (kinetically). Further, the material is less prone to
oxidation (e.g. compared to pure In) and this further simplifies
processing. This material may also be single-phase, which would
make it more uniform as a precursor material, resulting in better
yield.
As seen in FIGS. 18 and 19, after the layer 1500 is deposited over
the substrate 1506, it may then be heated in a suitable atmosphere
to react the layer 1500 in FIG. 18 and form film 1510 shown in FIG.
19. It should be understood that the layer 1500 may be used in
conjunction with layers 915 and 917. The layer 915 may be comprised
of various materials including but not limited at least one of the
following: a group IB element, a group IIIA element, a group VIA
element, a group IA element (new style: group 1), a binary and/or
multinary alloy of any of the preceding elements, a solid solution
of any of the preceding elements. It should be understood that
sodium or a sodium-based material such as but not limited to
sodium, a sodium compound, sodium fluoride, and/or sodium indium
sulfide, may also be used in layer 915 with the precursor material
to improve the qualities of the resulting film. FIG. 19 shows that
a layer 932 may also be used as described with regards to FIG. 6F.
Any of the method suggested previously with regards to sodium
content may also be adapted for use with the embodiments shown in
FIGS. 17-19.
It should be understood that other embodiments of the present
invention also disclose material comprised of at least two elements
wherein the amount of at least one element in the material is less
than about 50 molar percent of the total molar amount of that
element in the precursor material. This includes embodiments where
the amount of group IB element is less than the amount of group
IIIA element in inter-metallic material. As a nonlimiting example,
this may include other group IB poor, group IB-IIIA materials such
as Cu-poor Cu.sub.xIn.sub.y particles (where x<y). The amount of
group IIIA material may be in any range as desired (more than about
50 molar percent of the element in the precursor material or less
than 50 molar percent). In another nonlimiting example,
Cu.sub.1Ga.sub.2 may be used with elemental Cu and elemental In.
Although this material is not an inter-metallic material, this
material is a intermediate solid solution and is different from a
terminal solid solution. All solid particles are created based on a
Cu.sub.1Ga.sub.2 precursor. In this embodiment, no emulsions are
used.
In still other embodiments of the present invention, other viable
precursor materials may be formed using a group IB rich, group
IB-IIIA material. As a nonlimiting example, a variety of
intermediate solid-solutions may be used. Cu--Ga (38 at % Ga) may
be used in precursor layer 1500 with elemental indium and elemental
copper. In yet another embodiment, Cu--Ga (30 at % Ga) may be used
in precursor layer 1500 with elemental copper and elemental indium.
Both of these embodiments describe Cu-rich materials with the Group
IIIA element being less than about 50 molar percent of that element
in the precursor material. In still further embodiments, Cu--Ga
(multiphasic, 25 at % Ga) may be used with elemental copper and
indium to form the desired precursor layer. It should be understood
that nanoparticles of these materials may be created by mechanical
milling or other size reduction methods. In other embodiments,
these particles may be made by electroexplosive wire (EEW)
processing, evaporation condensation (EC), pulsed plasma
processing, or other methods. Although not limited to the
following, the particles sizes may be in the range of about 10 nm
to about 1 micron. They may be of any shape as described
herein.
Referring now to FIG. 19, in a still further embodiment of the
present invention, two or more layers of materials may be coated,
printed, or otherwise formed to provide a precursor layer with the
desired stoichiometric ratio. As a nonlimiting example, layer 1530
may contain a precursor material having Cu.sub.11In.sub.9 and a Ga
source such as elemental Ga and/or Ga.sub.xSe.sub.y, A copper rich
precursor layer 1532 containing Cu.sub.78In.sub.28 (solid-solution)
and elemental indium or In.sub.xSe.sub.y may be printed over layer
1530. In such an embodiment, the resulting overall ratios may have
Cu/(In+Ga)=0.85 and Ga/(In+Ga) 0.19. In one embodiment of the
resulting film, the film may have a stoichiometric ratio of
Cu/(In+Ga) with a compositional range of about 0.7 to about 1.0 and
Ga/(In+Ga) with a compositional range of about 0.05 to about
0.3.
Referring now to FIG. 21, it should be understood that in some
embodiments of the present invention, the inter-metallic material
is used as a feedstock or starting material from which particles
and/or nanoparticles may be formed. As a nonlimiting example, FIG.
21 shows one inter-metallic feedstock particle 1550 being processed
to form other particles. Any method used for size reduction and/or
shape change may be suitable including but not limited to milling,
EEW, EC, pulsed plasma processing, or combinations thereof.
Particles 552, 554, 556, and 558 may be formed. These particles may
be of varying shapes and some may contain only the inter-metallic
phase while others may contain that phase and other material
phases.
Referring now to FIGS. 22A and 22B, flakes 1600 (microflakes and/or
nanoflakes) provide certain advantages over other non-spherical
shapes such as but not limited to platelets. The flakes 1600
provide for highly efficient stacking (due to uniform thickness in
Z-axis) and high surface area (in X and Y axes). This leads to
faster reactions, better kinetics, and more uniform
products/films/compounds (with fewer side propagations). Platelet
1602 as seen in FIGS. 23A and 23B fail to have all of the above
advantages.
While the invention has been described and illustrated with
reference to certain particular embodiments thereof, those skilled
in the art will appreciate that various adaptations, changes,
modifications, substitutions, deletions, or additions of procedures
and protocols may be made without departing from the spirit and
scope of the invention. For example, with any of the above
embodiments, nanoflakes may be replaced by and/or mixed with
microflakes wherein the lengths and/or largest lateral dimension of
the planar microflakes are about 500 nm or larger. The microflakes
may each have a length less than about 5 microns and greater than
about 500 nm. The microflakes may each have a length between about
3 microns and about 500 nm. The particles may be microflakes having
lengths of greater than 500 nm. The particles may be microflakes
having lengths of greater than 750 nm. The microflakes may each
have a thickness of about 100 nm or less. The particles may be
microflakes having thicknesses of about 75 nm or less. The
particles may be microflakes having thicknesses of about 50 nm or
less. The microflakes may each have a thickness less than about 20
nm. The microflakes may have lengths of less than about 2 microns
and thicknesses of less than 100 nm. The microflakes may have
lengths of less than about 1 microns and a thicknesses of less than
50 nm. The microflakes may have an aspect ratio of at least about
10 or more. The microflakes have an aspect ratio of at least about
15 or more.
As mentioned, some embodiments of the invention may include both
nanoflakes and microflakes. Other may include flakes that are
exclusively in the size range of nanoflakes or the size range of
microflakes. With any of the above embodiments, the microflakes may
be replaced by microrods which are substantially linear, elongate
members. With any of the above embodiments, the nanoflakes may be
replaced by nanorods which are substantially linear, elongate
members. Still further embodiments may combine nanorods with
nanoflakes in the precursor layer. Any of the above embodiments may
be used on rigid substrate, flexible substrate, or a combinations
of the two such as but not limited to a flexible substrate that
become rigid during processing due to its material properties. In
one embodiment of the present invention, the particles may be
plates and/or discs and/or flakes and/or wires and/or rods of
micro-sized proportions. In another embodiment of the present
invention, the particles may be nanoplates and/or nanodiscs and/or
nanoflakes and/or nanowires and/or nanorods of nano-sized
proportions.
For any of the above embodiments, it should be understood that in
addition to the aforementioned, the temperature may also vary over
different time periods of precursor layer processing. As a
nonlimiting example, the heating may occur at a first temperature
over an initial processing time period and proceed to other
temperatures for subsequent time periods of the processing.
Optionally, the method may include intentionally creating one or
more temperature dips so that, as a nonlimiting example, the method
comprises heating, cooling, heating, and subsequent cooling. For
any of the above embodiments, it is also possible to have two or
more elements of IB elements in the chalcogenide particle and/or
the resulting film.
Additionally, concentrations, amounts, and other numerical data may
be presented herein in a range format. It is to be understood that
such range format is used merely for convenience and brevity and
should be interpreted flexibly to include not only the numerical
values explicitly recited as the limits of the range, but also to
include all the individual numerical values or sub-ranges
encompassed within that range as if each numerical value and
sub-range is explicitly recited. For example, a size range of about
1 nm to about 200 nm should be interpreted to include not only the
explicitly recited limits of about 1 nm and about 200 nm, but also
to include individual sizes such as 2 nm, 3 nm, 4 nm, and
sub-ranges such as 10 nm to 50 nm, 20 nm to 100 nm, etc. . . .
For example, still other embodiments of the present invention may
use a Cu--In precursor material wherein Cu--In contribute less than
about 50 percent of both Cu and In found in the precursor material.
The remaining amount is incorporated by elemental form or by non
IB-IIIA alloys. Thus, a Cu.sub.11In.sub.9 may be used with
elemental Cu, In, and Ga to form a resulting film. In another
embodiment, instead of elemental Cu, In, and Ga, other materials
such as Cu--Se, In--Se, and/or Ga--Se may be substituted as source
of the group IB or IIIA material. Optionally, in other embodiment,
the IB source may be any particle that contains Cu without being
alloyed with In and Ga (Cu, Cu--Se). The IIIA source may be any
particle that contains In without Cu (In--Se, In--Ga--Se) or any
particle that contains Ga without Cu (Ga, Ga--Se, or In--Ga--Se).
Other embodiments may have these combinations of the IB material in
a nitride or oxide form. Still other embodiments may have these
combinations of the IIIA material in a nitride or oxide form. The
present invention may use any combination of elements and/or
selenides (binary, ternary, or multinary) may be used. Optionally,
some other embodiments may use oxides such as In.sub.2O.sub.3 to
add the desired amounts of materials. It should be understood for
any of the above embodiments that more than one solid solution may
be used, multi-phasic alloys, and/or more general alloys may also
be used. For any of the above embodiments, the annealing process
may also involve exposure of the compound film to a gas such as
H.sub.2, CO, N.sub.2, Ar, H.sub.2Se, Se vapor, or combinations or
blends of these. It should also be understood that Se may be
evaporated or printed on to the stack of layers for processing.
It should also be understood that several intermediate solid
solutions may also be suitable for use according to the present
invention. As nonlimiting examples, a composition in the 6 phase
for Cu--In (about 42.52 to about 44.3 wt % In) and/or a composition
between the 6 phase for Cu--In and Cu.sub.16In.sub.9 may be
suitable inter-metallic materials for use with the present
invention to form a group IB-IIIA-VIA compound. It should be
understood that these inter-metallic materials may be mixed with
elemental or other materials such as Cu--Se, In--Se, and/or Ga--Se
to provide sources of the group IB or IIIA material to reach the
desired stoichiometric ratios in the final compound. Other
nonlimiting examples of inter-metallic material include
compositions of Cu--Ga containing the following phases:
.gamma..sub.1 (about 31.8 to about 39.8 wt % Ga), .gamma..sub.2
(about 36.0 to about 39.9 wt % Ga), .gamma..sub.3 (about 39.7 to
about -44.9 wt % Ga), the phase between .gamma..sub.2 and
.gamma..sub.3, the phase between the terminal solid solution and
.gamma..sub.1, and .theta. (about 66.7 to about 68.7 wt % Ga). For
Cu--Ga, a suitable composition is also found in the range in
between the terminal solid-solution of and the intermediate
solid-solution next to it. Advantageously, some of these
inter-metallic materials may be multi-phasic which are more likely
to lead to brittle materials that can be mechanically milled. Phase
diagrams for the following materials may be found in ASM Handbook,
Volume 3 Alloy Phase Diagrams (1992) by ASM International and fully
incorporated herein by reference for all purposes. Some specific
examples (fully incorporated herein by reference) may be found on
pages 2-168, 2-170, 2-176, 2-178, 2-208, 2-214, 2-257, and/or
2-259.
The publications discussed or cited herein are provided solely for
their disclosure prior to the filing date of the present
application. Nothing herein is to be construed as an admission that
the present invention is not entitled to antedate such publication
by virtue of prior invention. Further, the dates of publication
provided may be different from the actual publication dates which
may need to be independently confirmed. All publications mentioned
herein are incorporated herein by reference to disclose and
describe the structures and/or methods in connection with which the
publications are cited. The following applications are also
incorporated herein by reference for all purposes: U.S. patent
application Ser. No. 11/290,633 entitled "CHALCOGENIDE SOLAR CELLS"
filed Nov. 29, 2005, U.S. patent application Ser. No. 10/782,017,
entitled "SOLUTION-BASED FABRICATION OF PHOTOVOLTAIC CELL" filed
Feb. 19, 2004, U.S. patent application Ser. No. 10/943,657,
entitled "COATED NANOPARTICLES AND QUANTUM DOTS FOR SOLUTION-BASED
FABRICATION OF PHOTOVOLTAIC CELLS" filed Sep. 18, 2004, and U.S.
patent application Ser. No. 11/081,163, entitled "METALLIC
DISPERSION", filed Mar. 16, 2005, and U.S. patent application Ser.
No. 10/943,685, entitled "FORMATION OF CIGS ABSORBER LAYERS ON FOIL
SUBSTRATES", filed Sep. 18, 2004, Ser. No. 11/361,433 filed Feb.
23, 2006, and Ser. No. 11/394,849 filed Mar. 30, 2006 the entire
disclosures of which are incorporated herein by reference.
While the above is a complete description of the preferred
embodiment of the present invention, it is possible to use various
alternatives, modifications and equivalents. Therefore, the scope
of the present invention should be determined not with reference to
the above description but should, instead, be determined with
reference to the appended claims, along with their full scope of
equivalents. Any feature, whether preferred or not, may be combined
with any other feature, whether preferred or not. In the claims
that follow, the indefinite article "A" or "An" refers to a
quantity of one or more of the item following the article, except
where expressly stated otherwise. The appended claims are not to be
interpreted as including means-plus-function limitations, unless
such a limitation is explicitly recited in a given claim using the
phrase "means for."
* * * * *
References