U.S. patent number 8,264,044 [Application Number 12/753,711] was granted by the patent office on 2012-09-11 for integrated circuit including cross-coupled transistors having two complementary pairs of co-aligned gate electrodes with offset contacting structures positioned between transistors of different type.
This patent grant is currently assigned to Tela Innovations, Inc.. Invention is credited to Scott T. Becker.
United States Patent |
8,264,044 |
Becker |
September 11, 2012 |
**Please see images for:
( Certificate of Correction ) ** |
Integrated circuit including cross-coupled transistors having two
complementary pairs of co-aligned gate electrodes with offset
contacting structures positioned between transistors of different
type
Abstract
Each of first and second PMOS transistors, and first and second
NMOS transistors has a respective diffusion terminal with a direct
electrical connection to a common node, and has a respective gate
electrode formed from an originating rectangular-shaped layout
feature. Centerlines of the originating rectangular-shaped layout
features are aligned to be parallel with a first direction. The
first PMOS transistor gate electrode is electrically connected to
the second NMOS transistor electrode. The second PMOS transistor
gate electrode is electrically connected to the first NMOS
transistor gate electrode. The first and second PMOS transistors,
and the first and second NMOS transistors together define a
cross-coupled transistor configuration having commonly oriented
gate electrodes formed from respective rectangular-shaped layout
features.
Inventors: |
Becker; Scott T. (Scotts
Valley, CA) |
Assignee: |
Tela Innovations, Inc. (Los
Gatos, CA)
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Family
ID: |
41052712 |
Appl.
No.: |
12/753,711 |
Filed: |
April 2, 2010 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20100187615 A1 |
Jul 29, 2010 |
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Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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12402465 |
Mar 11, 2009 |
7956421 |
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61036460 |
Mar 13, 2008 |
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61042709 |
Apr 4, 2008 |
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61045953 |
Apr 17, 2008 |
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61050136 |
May 2, 2008 |
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Current U.S.
Class: |
257/369;
257/E27.011; 257/401; 257/E27.062; 257/206; 257/E23.151 |
Current CPC
Class: |
H01L
23/49844 (20130101); H01L 27/0207 (20130101); H01L
27/088 (20130101); H01L 21/823475 (20130101); H01L
27/11 (20130101); H01L 27/092 (20130101); G06F
30/392 (20200101); H01L 27/1052 (20130101); H01L
27/1104 (20130101); G06F 30/39 (20200101); H01L
27/11807 (20130101); H01L 23/5386 (20130101); H01L
2027/11887 (20130101); H01L 2027/11875 (20130101); H01L
2924/0002 (20130101); H01L 2027/11853 (20130101); H01L
2924/0002 (20130101); H01L 2924/00 (20130101) |
Current International
Class: |
H01L
27/06 (20060101) |
Field of
Search: |
;257/369,401,E23.151,E27.011,E27.062 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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1394858 |
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Mar 2004 |
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EP |
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1670062 |
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Jun 2006 |
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EP |
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2860920 |
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Apr 2005 |
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FR |
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10-116911 |
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May 1998 |
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JP |
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2002-258463 |
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Sep 2002 |
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JP |
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10-1999-0057943 |
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Jul 1999 |
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KR |
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10-2000-0028830 |
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May 2000 |
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KR |
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10-2005-0030347 |
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Mar 2005 |
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KR |
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WO 2005/104356 |
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WO |
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WO 2005104356 |
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WO |
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WO |
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WO 2006/052738 |
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May 2006 |
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WO |
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WO 2007/103587 |
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Sep 2007 |
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WO |
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|
Primary Examiner: Kuo; Wensing
Attorney, Agent or Firm: Martine Penilla Group, LLP
Parent Case Text
CLAIM OF PRIORITY
This application is a continuation application under 35 U.S.C. 120
of prior U.S. application Ser. No. 12/402,465, filed Mar. 11, 2009,
now U.S. Pat. No. 7,956,421 and entitled "Cross-Coupled Transistor
Layouts in Restricted Gate Level Layout Architecture," which claims
priority under 35 U.S.C. 119(e) to U.S. Provisional Patent
Application No. 61/036,460, filed Mar. 13, 2008, entitled
"Cross-Coupled Transistor Layouts Using Linear Gate Level
Features," and to U.S. Provisional Patent Application No.
61/042,709, filed Apr. 4, 2008, entitled "Cross-Coupled Transistor
Layouts Using Linear Gate Level Features," and to U.S. Provisional
Patent Application No. 61/045,953, filed Apr. 17, 2008, entitled
"Cross-Coupled Transistor Layouts Using Linear Gate Level
Features," and to U.S. Provisional Patent Application No.
61/050,136, filed May 2, 2008, entitled "Cross-Coupled Transistor
Layouts Using Linear Gate Level Features." The disclosure of each
above-identified patent application is incorporated in its entirety
herein by reference.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is related to each application identified in the
table below. The disclosure of each application identified in the
table below is incorporated herein by reference in its
entirety.
TABLE-US-00001 Application Filing Title No. Date Linear Gate Level
Cross-Coupled 12/753,727 Apr. 2, 2010 Transistor Device with
Contiguous p- type Diffusion Regions and Contiguous n-type
Diffusion Regions Linear Gate Level Cross-Coupled 12/753,733 Apr.
2, 2010 Transistor Device with Overlapping PMOS Transistors and
Overlapping NMOS Transistors Relative to Direction of Gate
Electrodes Linear Gate Level Cross-Coupled 12/753,740 Apr. 2, 2010
Transistor Device with Non- Overlapping PMOS Transistors and
Overlapping NMOS Transistors Relative to Direction of Gate
Electrodes Linear Gate Level Cross-Coupled 12/753,753 Apr. 2, 2010
Transistor Device with Overlapping PMOS Transistors and Non-
Overlapping NMOS Transistors Relative to Direction of Gate
Electrodes Linear Gate Level Cross-Coupled 12/753,758 Apr. 2, 2010
Transistor Device with Non- Overlapping PMOS Transistors and
Non-Overlapping NMOS Transistors Relative to Direction of Gate
Electrodes Linear Gate Level Cross-Coupled 12/753,766 Apr. 2, 2010
Transistor Device with Equal Width PMOS Transistors and Equal Width
NMOS Transistors Linear Gate Level Cross-Coupled 12/753,776 Apr. 2,
2010 Transistor Device with Different Width PMOS Transistors and
Different Width NMOS Transistors Linear Gate Level Cross-Coupled
12/753,789 Apr. 2, 2010 Transistor Device with Connection Between
Cross-Coupled Transistor Gate Electrodes Made Utilizing
Interconnect Level Other than Gate Electrode Level Linear Gate
Level Cross-Coupled 12/753,793 Apr. 2, 2010 Transistor Device with
Constant Gate Electrode Pitch Linear Gate Level Cross-Coupled
12/753,795 Apr. 2, 2010 Transistor Device with Complimentary Pairs
of Cross- Coupled Transistors Defined by Physically Separate Gate
Electrodes within Gate Electrode Level Linear Gate Level
Cross-Coupled 12/753,798 Apr. 2, 2010 Transistor Device with
Cross-Coupled Transistors Defined on Two Gate Electrode Tracks with
Crossing Gate Electrode Connections Linear Gate Level Cross-Coupled
12/753,805 Apr. 2, 2010 Transistor Device with Cross-Coupled
Transistors Defined on Three Gate Electrode Tracks with Crossing
Gate Electrode Connections Linear Gate Level Cross-Coupled
12/753,810 Apr. 2, 2010 Transistor Device with Cross-Coupled
Transistors Defined on Four Gate Electrode Tracks with Crossing
Gate Electrode Connections Linear Gate Level Cross-Coupled
12/753,817 Apr. 2, 2010 Transistor Device with Cross-Coupled
Transistor Gate Electrode Connections Made Using Linear First
Interconnect Level above Gate Electrode Level Channelized Gate
Level Cross- 12/754,050 Apr. 5, 2010 Coupled Transistor Device with
Direct Electrical Connection of Cross- Coupled Transistors to
Common Diffusion Node Channelized Gate Level Cross- 12/754,061 Apr.
5, 2010 Coupled Transistor Device with Contiguous p-type Diffusion
Regions and Contiguous n-type Diffusion Regions Channelized Gate
Level Cross- 12/754,078 Apr. 5, 2010 Coupled Transistor Device with
Overlapping PMOS Transistors and Overlapping NMOS Transistors
Relative to Direction of Gate Electrodes Channelized Gate Level
Cross- 12/754,091 Apr. 5, 2010 Coupled Transistor Device with Non-
Overlapping PMOS Transistors and Overlapping NMOS Transistors
Relative to Direction of Gate Electrodes Channelized Gate Level
Cross- 12/754,103 Apr. 5, 2010 Coupled Transistor Device with
Overlapping PMOS Transistors and Non-Overlapping NMOS Transistors
Relative to Direction of Gate Electrodes Channelized Gate Level
Cross- 12/754,114 Apr. 5, 2010 Coupled Transistor Device with Non-
Overlapping PMOS Transistors and Non-Overlapping NMOS Transistors
Relative to Direction of Gate Electrodes Channelized Gate Level
Cross- 12/754,129 Apr. 5, 2010 Coupled Transistor Device with Equal
Width PMOS Transistors and Equal Width NMOS Transistors Channelized
Gate Level Cross- 12/754,147 Apr. 5, 2010 Coupled Transistor Device
with Different Width PMOS Transistors and Different Width NMOS
Transistors Channelized Gate Level Cross- 12/754,168 Apr. 5, 2010
Coupled Transistor Device with Connection Between Cross-Coupled
Transistor Gate Electrodes Made Utilizing Interconnect Level Other
than Gate Electrode Level Channelized Gate Level Cross- 12/754,215
Apr. 5, 2010 Coupled Transistor Device with Constant Gate Electrode
Pitch Channelized Gate Level Cross- 12/754,233 Apr. 5, 2010 Coupled
Transistor Device with Complimentary Pairs of Cross-Coupled
Transistors Defined by Physically Separate Gate Electrodes within
Gate Electrode Level Channelized Gate Level Cross- 12/754,351 Apr.
5, 2010 Coupled Transistor Device with Cross- Coupled Transistors
Defined on Two Gate Electrode Tracks with Crossing Gate Electrode
Connections Channelized Gate Level Cross- 12/754,384 Apr. 5, 2010
Coupled Transistor Device with Cross- Coupled Transistors Defined
on Three Gate Electrode Tracks with Crossing Gate Electrode
Connections Channelized Gate Level Cross- 12/754,563 Apr. 5, 2010
Coupled Transistor Device with Cross- Coupled Transistors Defined
on Four Gate Electrode Tracks with Crossing Gate Electrode
Connections Channelized Gate Level Cross- 12/754,566 Apr. 5, 2010
Coupled Transistor Device with Cross- Coupled Transistor Gate
Electrode Connections Made Using Linear First Interconnect Level
above Gate Electrode Level
Claims
What is claimed is:
1. An integrated circuit, comprising: a first transistor of a first
transistor type formed in part by a first gate electrode formed to
extend lengthwise in a first direction, wherein the first gate
electrode corresponds to a portion of a first gate level conductive
structure formed within a corresponding gate level channel within a
gate level region of the integrated circuit; a first transistor of
a second transistor type formed in part by a second gate electrode
formed to extend lengthwise in the first direction, wherein the
second gate electrode corresponds to a portion of a second gate
level conductive structure formed within a corresponding gate level
channel within the gate level region of the integrated circuit,
wherein the second gate electrode is substantially co-aligned with
the first gate electrode along a common line of extent in the first
direction; a second transistor of the first transistor type formed
in part by a third gate electrode formed to extend lengthwise in
the first direction, wherein the third gate electrode corresponds
to a portion of a third gate level conductive structure formed
within a corresponding gate level channel within the gate level
region of the integrated circuit; a second transistor of the second
transistor type formed in part by a fourth gate electrode formed to
extend lengthwise in the first direction, wherein the fourth gate
electrode corresponds to a portion of a fourth gate level
conductive structure formed within a corresponding gate level
channel within the gate level region of the integrated circuit,
wherein the fourth gate electrode is substantially co-aligned with
the third gate electrode along a common line of extent in the first
direction, wherein each of the first and second transistors of the
first transistor type is physically separate from each of the first
and second transistors of the second transistor type, wherein each
of the first, second, third, and fourth gate level conductive
structures is defined within its corresponding gate level channel
without physically contacting another gate level conductive
structure defined within an adjoining gate level channel, wherein
the first and fourth gate electrodes are electrically connected to
each other through one or more conductive structures located within
at least one level of the integrated circuit other than the gate
electrode level of the integrated circuit, wherein the second and
third gate electrodes are electrically connected to each other
through one or more conductive structures located within at least
one level of the integrated circuit other than the gate electrode
level of the integrated circuit, wherein each of the first and
third gate level conductive structures are physically separated
from each of the second and fourth gate level conductive
structures; a first conductive contacting structure formed to
physically connect to the first gate level conductive structure at
a location between the first and second gate electrodes; and a
second conductive contacting structure formed to physically connect
to the third gate level conductive structure at a location between
the third and fourth gate electrodes, wherein the second conductive
contacting structure is offset from the first conductive contacting
structure in the first direction.
2. An integrated circuit as recited in claim 1, further comprising:
a fifth gate level conductive structure formed within a
corresponding gate level channel within the gate level region of
the integrated circuit, wherein the fifth gate level conductive
structure does not form a gate electrode of any transistor.
3. An integrated circuit as recited in claim 2, wherein a size of
the fifth gate level conductive structure as measured in a second
direction perpendicular to the first direction is substantially
equal to a size of at least one of the first, second, third, and
fourth gate level conductive structures as measured in the second
direction.
4. An integrated circuit as recited in claim 1, further comprising:
a substrate region, wherein the gate level region of the integrated
circuit is formed above the substrate region; and an interconnect
level region formed above the substrate region, the interconnect
level region including a first linear-shaped conductive
interconnect structure formed to extend lengthwise in the first
direction.
5. An integrated circuit as recited in claim 4, wherein the
interconnect level region includes a second linear-shaped
conductive interconnect structure formed to extend lengthwise in
the first direction, the second linear-shaped conductive
interconnect structure positioned next to and spaced apart from the
first linear-shaped conductive interconnect structure.
6. An integrated circuit as recited in claim 5, wherein the first
transistor of the first transistor type is formed in part by a
first diffusion region of a first diffusion type, wherein the
second transistor of the first transistor type is formed in part by
a second diffusion region of the first diffusion type, wherein the
first transistor of the second transistor type is formed in part by
a first diffusion region of a second diffusion type, wherein the
second transistor of the second transistor type is formed in part
by a second diffusion region of the second diffusion type, and
wherein each of the first and second diffusion regions of the first
diffusion type and the first and second diffusion regions of the
second diffusion type are electrically connected to each other
through one or more conductive structures that include one of the
first and second linear-shaped conductive interconnect
structures.
7. An integrated circuit as recited in claim 1, further comprising:
a substrate region, wherein the gate level region of the integrated
circuit is formed above the substrate region; and an interconnect
level region formed above the substrate region, the interconnect
level region including a first linear-shaped conductive
interconnect structure formed to extend lengthwise in a second
direction perpendicular to the first direction.
8. An integrated circuit as recited in claim 7, wherein the
interconnect level region includes a second linear-shaped
conductive interconnect structure formed to extend lengthwise in
the second direction, the second linear-shaped conductive
interconnect structure positioned next to and spaced apart from the
first linear-shaped conductive interconnect structure.
9. An integrated circuit as recited in claim 8, wherein the first
transistor of the first transistor type is formed in part by a
first diffusion region of a first diffusion type, wherein the
second transistor of the first transistor type is formed in part by
a second diffusion region of the first diffusion type, wherein the
first transistor of the second transistor type is formed in part by
a first diffusion region of a second diffusion type, wherein the
second transistor of the second transistor type is formed in part
by a second diffusion region of the second diffusion type, and
wherein each of the first and second diffusion regions of the first
diffusion type and the first and second diffusion regions of the
second diffusion type are electrically connected to each other
through one or more conductive structures that include one of the
first and second linear-shaped conductive interconnect
structures.
10. An integrated circuit as recited in claim 1, further
comprising: a third conductive contacting structure formed to
physically connect to the second gate level conductive structure at
a location between the first and second gate electrodes; and a
fourth conductive contacting structure formed to physically connect
to the fourth gate level conductive structure at a location between
the third and fourth gate electrodes, wherein the third conductive
contacting structure is offset from the fourth conductive
contacting structure in the first direction.
11. An integrated circuit as recited in claim 10, wherein each of
the first and second transistors of the first transistor type is
formed in part by a shared diffusion region of a first diffusion
type, and wherein each of the first and second transistors of the
second transistor type is formed in part by a shared diffusion
region of a second diffusion type.
12. An integrated circuit as recited in claim 11, further
comprising: a third transistor of the first transistor type formed
in part by a fifth gate electrode formed to extend lengthwise in
the first direction, wherein the fifth gate electrode corresponds
to a portion of a fifth gate level conductive structure formed
within a corresponding gate level channel within the gate level
region of the integrated circuit; a third transistor of the second
transistor type formed in part by a sixth gate electrode formed to
extend lengthwise in the first direction, wherein the sixth gate
electrode corresponds to a portion of the fifth gate level
conductive structure, wherein the first and second gate level
conductive structures are formed within a first common gate level
channel, and wherein the gate level channel in which the fifth gate
level conductive structure is formed is adjacent to the first
common gate level channel in which the first and second gate level
conductive structures are formed; a fourth transistor of the first
transistor type formed in part by a seventh gate electrode formed
to extend lengthwise in the first direction, wherein the seventh
gate electrode corresponds to a portion of a sixth gate level
conductive structure formed within a corresponding gate level
channel within the gate level region of the integrated circuit; a
fourth transistor of the second transistor type formed in part by
an eighth gate electrode formed to extend lengthwise in the first
direction, wherein the eighth gate electrode corresponds to a
portion of the sixth gate level conductive structure, wherein the
third and fourth gate level conductive structures are formed within
a second common gate level channel, and wherein the gate level
channel in which the sixth gate level conductive structure is
formed is adjacent to the second common gate level channel in which
the third and fourth gate level conductive structures are
formed.
13. An integrated circuit as recited in claim 12, further
comprising: a substrate region, wherein the gate level region of
the integrated circuit is formed above the substrate region; and a
plurality of interconnect level regions formed above the substrate
region, wherein the shared diffusion region of the first diffusion
type is electrically connected to the shared diffusion region of
the second diffusion type through one or more conductive
interconnect structures formed in each of at least two of the
plurality of interconnect level regions, wherein each of the
plurality of interconnect level regions is part of a corresponding
interconnect level of the integrated circuit, wherein any given one
of the one or more conductive interconnect structures includes 1) a
corresponding first connection area portion that physically
connects to at least one structure in any level of the integrated
circuit different from the interconnect level that includes the
given conductive interconnect structure, and 2) a corresponding
second connection area portion that physically connects to another
structure in any level of the integrated circuit different from the
interconnect level that includes the given conductive interconnect
structure, wherein the corresponding first connection area portion
does not vertically overlap the corresponding second connection
area portion relative to the substrate region.
14. An integrated circuit as recited in claim 13, wherein each of
the first, second, third, fourth, fifth, sixth, seventh, and eighth
gate electrodes has a lengthwise centerline, and wherein the first,
second, third, fourth, fifth, sixth, seventh, and eighth gate
electrodes are positioned according to an equal
centerline-to-centerline pitch as measured in a second direction
perpendicular to the first direction, such that a distance as
measured in the second direction between lengthwise centerlines of
different ones of the first, second, third, fourth, fifth, sixth,
seventh, and eighth gate electrodes is an integer multiple of the
equal centerline-to-centerline pitch.
15. An integrated circuit as recited in claim 14, wherein each of
the first, second, third, fourth, fifth, and sixth gate level
conductive structures is linear-shaped and formed to extend
lengthwise in the first direction.
16. An integrated circuit as recited in claim 15, further
comprising: a seventh gate level conductive structure formed within
a corresponding gate level channel within the gate level region of
the integrated circuit, wherein the seventh gate level conductive
structure does not form a gate electrode of any transistor.
17. An integrated circuit as recited in claim 12, further
comprising: a substrate region, wherein the gate level region of
the integrated circuit is formed above the substrate region; and an
interconnect level region formed above the substrate region to
include a number of conductive interconnect structures, wherein the
interconnect level region is part of an interconnect level of the
integrated circuit, wherein any given one of the number of
conductive interconnect structures includes 1) a corresponding
first connection area portion that physically connects to at least
one structure in any level of the integrated circuit different from
the interconnect level that includes the given conductive
interconnect structure, and 2) a corresponding second connection
area portion that physically connects to another structure in any
level of the integrated circuit different from the interconnect
level that includes the given conductive interconnect structure,
wherein the corresponding first connection area portion does not
vertically overlap the corresponding second connection area portion
relative to the substrate region, wherein some of the number of
conductive interconnect structures form an electrical connection
between the shared diffusion region of the first diffusion type and
the shared diffusion region of the second diffusion type, and
wherein each conductive interconnect structure that forms the
electrical connection between the shared diffusion region of the
first diffusion type and the shared diffusion region of the second
diffusion type is located within the interconnect level region.
18. An integrated circuit as recited in claim 17, wherein each of
the first, second, third, fourth, fifth, sixth, seventh, and eighth
gate electrodes has a lengthwise centerline, and wherein the first,
second, third, fourth, fifth, sixth, seventh, and eighth gate
electrodes are positioned according to an equal
centerline-to-centerline pitch as measured in a second direction
perpendicular to the first direction, such that a distance as
measured in the second direction between lengthwise centerlines of
different ones of the first, second, third, fourth, fifth, sixth,
seventh, and eighth gate electrodes is an integer multiple of the
equal centerline-to-centerline pitch.
19. An integrated circuit as recited in claim 18, wherein each of
the first, second, third, fourth, fifth, and sixth gate level
conductive structures is linear-shaped and formed to extend
lengthwise in the first direction.
20. An integrated circuit as recited in claim 19, further
comprising: a seventh gate level conductive structure formed within
a corresponding gate level channel within the gate level region of
the integrated circuit, wherein the seventh gate level conductive
structure does not form a gate electrode of any transistor.
21. An integrated circuit as recited in claim 1, wherein a length
of the first gate level conductive structure as measured in the
first direction is different than a length of the third gate level
conductive structure as measured in the first direction.
22. An integrated circuit as recited in claim 21, wherein each of
the first and second transistors of the first transistor type is
formed in part by a shared diffusion region of a first diffusion
type, and wherein each of the first and second transistors of the
second transistor type is formed in part by a shared diffusion
region of a second diffusion type.
23. An integrated circuit as recited in claim 22, further
comprising: a third transistor of the first transistor type formed
in part by a fifth gate electrode formed to extend lengthwise in
the first direction, wherein the fifth gate electrode corresponds
to a portion of a fifth gate level conductive structure formed
within a corresponding gate level channel within the gate level
region of the integrated circuit; a third transistor of the second
transistor type formed in part by a sixth gate electrode formed to
extend lengthwise in the first direction, wherein the sixth gate
electrode corresponds to a portion of the fifth gate level
conductive structure, wherein the first and second gate level
conductive structures are formed within a first common gate level
channel, and wherein the gate level channel in which the fifth gate
level conductive structure is formed is adjacent to the first
common gate level channel in which the first and second gate level
conductive structures are formed; a fourth transistor of the first
transistor type formed in part by a seventh gate electrode formed
to extend lengthwise in the first direction, wherein the seventh
gate electrode corresponds to a portion of a sixth gate level
conductive structure formed within a corresponding gate level
channel within the gate level region of the integrated circuit; a
fourth transistor of the second transistor type formed in part by
an eighth gate electrode formed to extend lengthwise in the first
direction, wherein the eighth gate electrode corresponds to a
portion of the sixth gate level conductive structure, wherein the
third and fourth gate level conductive structures are formed within
a second common gate level channel, and wherein the gate level
channel in which the sixth gate level conductive structure is
formed is adjacent to the second common gate level channel in which
the third and fourth gate level conductive structures are
formed.
24. An integrated circuit as recited in claim 23, further
comprising: a substrate region, wherein the gate level region of
the integrated circuit is formed above the substrate region; and a
plurality of interconnect level regions formed above the substrate
region, wherein the shared diffusion region of the first diffusion
type is electrically connected to the shared diffusion region of
the second diffusion type through one or more conductive
interconnect structures formed in each of at least two of the
plurality of interconnect level regions, wherein each of the
plurality of interconnect level regions is part of a corresponding
interconnect level of the integrated circuit, wherein any given one
of the one or more conductive interconnect structures includes 1) a
corresponding first connection area portion that physically
connects to at least one structure in any level of the integrated
circuit different from the interconnect level that includes the
given conductive interconnect structure, and 2) a corresponding
second connection area portion that physically connects to another
structure in any level of the integrated circuit different from the
interconnect level that includes the given conductive interconnect
structure, wherein the corresponding first connection area portion
does not vertically overlap the corresponding second connection
area portion relative to the substrate region.
25. An integrated circuit as recited in claim 24, wherein each of
the first, second, third, fourth, fifth, sixth, seventh, and eighth
gate electrodes has a lengthwise centerline, and wherein the first,
second, third, fourth, fifth, sixth, seventh, and eighth gate
electrodes are positioned according to an equal
centerline-to-centerline pitch as measured in a second direction
perpendicular to the first direction, such that a distance as
measured in the second direction between lengthwise centerlines of
different ones of the first, second, third, fourth, fifth, sixth,
seventh, and eighth gate electrodes is an integer multiple of the
equal centerline-to-centerline pitch.
26. An integrated circuit as recited in claim 25, wherein each of
the first, second, third, fourth, fifth, and sixth gate level
conductive structures is linear-shaped and formed to extend
lengthwise in the first direction.
27. An integrated circuit as recited in claim 26, further
comprising: a seventh gate level conductive structure formed within
a corresponding gate level channel within the gate level region of
the integrated circuit, wherein the seventh gate level conductive
structure does not form a gate electrode of any transistor.
28. An integrated circuit as recited in claim 23, further
comprising: a substrate region, wherein the gate level region of
the integrated circuit is formed above the substrate region; and an
interconnect level region formed above the substrate region to
include a number of conductive interconnect structures, wherein the
interconnect level region is part of an interconnect level of the
integrated circuit, wherein any given one of the number of
conductive interconnect structures includes 1) a corresponding
first connection area portion that physically connects to at least
one structure in any level of the integrated circuit different from
the interconnect level that includes the given conductive
interconnect structure, and 2) a corresponding second connection
area portion that physically connects to another structure in any
level of the integrated circuit different from the interconnect
level that includes the given conductive interconnect structure,
wherein the corresponding first connection area portion does not
vertically overlap the corresponding second connection area portion
relative to the substrate region, wherein some of the number of
conductive interconnect structures formed an electrical connection
between the shared diffusion region of the first diffusion type and
the shared diffusion region of the second diffusion type, and
wherein each conductive interconnect structure that forms the
electrical connection between the shared diffusion region of the
first diffusion type and the shared diffusion region of the second
diffusion type is located within the interconnect level region.
29. An integrated circuit as recited in claim 28, wherein each of
the first, second, third, fourth, fifth, sixth, seventh, and eighth
gate electrodes has a lengthwise centerline, and wherein the first,
second, third, fourth, fifth, sixth, seventh, and eighth gate
electrodes are positioned according to an equal
centerline-to-centerline pitch as measured in a second direction
perpendicular to the first direction, such that a distance as
measured in the second direction between lengthwise centerlines of
different ones of the first, second, third, fourth, fifth, sixth,
seventh, and eighth gate electrodes is an integer multiple of the
equal centerline-to-centerline pitch.
30. An integrated circuit as recited in claim 29, wherein each of
the first, second, third, fourth, fifth, and sixth gate level
conductive structures is linear-shaped and formed to extend
lengthwise in the first direction.
31. An integrated circuit as recited in claim 30, further
comprising: a seventh gate level conductive structure formed within
a corresponding gate level channel within the gate level region of
the integrated circuit, wherein the seventh gate level conductive
structure does not form a gate electrode of any transistor.
32. An integrated circuit as recited in claim 1 wherein a length of
the second gate level conductive structure as measured in the first
direction is different than a length of the fourth gate level
conductive structure as measured in the first direction.
33. An integrated circuit as recited in claim 32, wherein each of
the first and second transistors of the first transistor type is
formed in part by a shared diffusion region of a first diffusion
type, and wherein each of the first and second transistors of the
second transistor type is formed in part by a shared diffusion
region of a second diffusion type.
34. An integrated circuit as recited in claim 33, further
comprising: a third transistor of the first transistor type formed
in part by a fifth gate electrode formed to extend lengthwise in
the first direction, wherein the fifth gate electrode corresponds
to a portion of a fifth gate level conductive structure formed
within a corresponding gate level channel within the gate level
region of the integrated circuit; a third transistor of the second
transistor type formed in part by a sixth gate electrode formed to
extend lengthwise in the first direction, wherein the sixth gate
electrode corresponds to a portion of the fifth gate level
conductive structure, wherein the first and second gate level
conductive structures are formed within a first common gate level
channel, and wherein the gate level channel in which the fifth gate
level conductive structure is formed is adjacent to the first
common gate level channel in which the first and second gate level
conductive structures are formed; a fourth transistor of the first
transistor type formed in part by a seventh gate electrode formed
to extend lengthwise in the first direction, wherein the seventh
gate electrode corresponds to a portion of a sixth gate level
conductive structure formed within a corresponding gate level
channel within the gate level region of the integrated circuit; a
fourth transistor of the second transistor type formed in part by
an eighth gate electrode formed to extend lengthwise in the first
direction, wherein the eighth gate electrode corresponds to a
portion of the sixth gate level conductive structure, wherein the
third and fourth gate level conductive structures are formed within
a second common gate level channel, and wherein the gate level
channel in which the sixth gate level conductive structure is
formed is adjacent to the second common gate level channel in which
the third and fourth gate level conductive structures are
formed.
35. An integrated circuit as recited in claim 34, further
comprising: a substrate region, wherein the gate level region of
the integrated circuit is formed above the substrate region; and a
plurality of interconnect level regions formed above the substrate
region, wherein the shared diffusion region of the first diffusion
type is electrically connected to the shared diffusion region of
the second diffusion type through one or more conductive
interconnect structures formed in each of at least two of the
plurality of interconnect level regions, wherein each of the
plurality of interconnect level regions is part of a corresponding
interconnect level of the integrated circuit, wherein any given one
of the one or more conductive interconnect structures includes 1) a
corresponding first connection area portion that physically
connects to at least one structure in any level of the integrated
circuit different from the interconnect level that includes the
given conductive interconnect structure, and 2) a corresponding
second connection area portion that physically connects to another
structure in any level of the integrated circuit different from the
interconnect level that includes the given conductive interconnect
structure, wherein the corresponding first connection area portion
does not vertically overlap the corresponding second connection
area portion relative to the substrate region.
36. An integrated circuit as recited in claim 35, wherein each of
the first, second, third, fourth, fifth, sixth, seventh, and eighth
gate electrodes has a lengthwise centerline, and wherein the first,
second, third, fourth, fifth, sixth, seventh, and eighth gate
electrodes are positioned according to an equal
centerline-to-centerline pitch as measured in a second direction
perpendicular to the first direction, such that a distance as
measured in the second direction between lengthwise centerlines of
different ones of the first, second, third, fourth, fifth, sixth,
seventh, and eighth gate electrodes is an integer multiple of the
equal centerline-to-centerline pitch.
37. An integrated circuit as recited in claim 36, wherein each of
the first, second, third, fourth, fifth, and sixth gate level
conductive structures is linear-shaped and formed to extend
lengthwise in the first direction.
38. An integrated circuit as recited in claim 37, further
comprising: a seventh gate level conductive structure formed within
a corresponding gate level channel within the gate level region of
the integrated circuit, wherein the seventh gate level conductive
structure does not form a gate electrode of any transistor.
39. An integrated circuit as recited in claim 34, further
comprising: a substrate region, wherein the gate level region of
the integrated circuit is formed above the substrate region; and an
interconnect level region formed above the substrate region to
include a number of conductive interconnect structures, wherein the
interconnect level region is part of an interconnect level of the
integrated circuit, wherein any given one of the number of
conductive interconnect structures includes 1) a corresponding
first connection area portion that physically connects to at least
one structure in any level of the integrated circuit different from
the interconnect level that includes the given conductive
interconnect structure, and 2) a corresponding second connection
area portion that physically connects to another structure in any
level of the integrated circuit different from the interconnect
level that includes the given conductive interconnect structure,
wherein the corresponding first connection area portion does not
vertically overlap the corresponding second connection area portion
relative to the substrate region, wherein some of the number of
conductive interconnect structures formed an electrical connection
between the shared diffusion region of the first diffusion type and
the shared diffusion region of the second diffusion type, and
wherein each conductive interconnect structure that forms the
electrical connection between the shared diffusion region of the
first diffusion type and the shared diffusion region of the second
diffusion type is located within the interconnect level region.
40. An integrated circuit as recited in claim 39, wherein each of
the first, second, third, fourth, fifth, sixth, seventh, and eighth
gate electrodes has a lengthwise centerline, and wherein the first,
second, third, fourth, fifth, sixth, seventh, and eighth gate
electrodes are positioned according to an equal
centerline-to-centerline pitch as measured in a second direction
perpendicular to the first direction, such that a distance as
measured in the second direction between lengthwise centerlines of
different ones of the first, second, third, fourth, fifth, sixth,
seventh, and eighth gate electrodes is an integer multiple of the
equal centerline-to-centerline pitch.
41. An integrated circuit as recited in claim 40, wherein each of
the first, second, third, fourth, fifth, and sixth gate level
conductive structures is linear-shaped and formed to extend
lengthwise in the first direction.
42. An integrated circuit as recited in claim 41, further
comprising: a seventh gate level conductive structure formed within
a corresponding gate level channel within the gate level region of
the integrated circuit, wherein the seventh gate level conductive
structure does not form a gate electrode of any transistor.
Description
BACKGROUND
A push for higher performance and smaller die size drives the
semiconductor industry to reduce circuit chip area by approximately
50% every two years. The chip area reduction provides an economic
benefit for migrating to newer technologies. The 50% chip area
reduction is achieved by reducing the feature sizes between 25% and
30%. The reduction in feature size is enabled by improvements in
manufacturing equipment and materials. For example, improvement in
the lithographic process has enabled smaller feature sizes to be
achieved, while improvement in chemical mechanical polishing (CMP)
has in-part enabled a higher number of interconnect layers.
In the evolution of lithography, as the minimum feature size
approached the wavelength of the light source used to expose the
feature shapes, unintended interactions occurred between
neighboring features. Today minimum feature sizes are approaching
45 nm (nanometers), while the wavelength of the light source used
in the photolithography process remains at 193 nm. The difference
between the minimum feature size and the wavelength of light used
in the photolithography process is defined as the lithographic gap.
As the lithographic gap grows, the resolution capability of the
lithographic process decreases.
An interference pattern occurs as each shape on the mask interacts
with the light. The interference patterns from neighboring shapes
can create constructive or destructive interference. In the case of
constructive interference, unwanted shapes may be inadvertently
created. In the case of destructive interference, desired shapes
may be inadvertently removed. In either case, a particular shape is
printed in a different manner than intended, possibly causing a
device failure. Correction methodologies, such as optical proximity
correction (OPC), attempt to predict the impact from neighboring
shapes and modify the mask such that the printed shape is
fabricated as desired. The quality of the light interaction
prediction is declining as process geometries shrink and as the
light interactions become more complex.
In view of the foregoing, a solution is needed for managing
lithographic gap issues as technology continues to progress toward
smaller semiconductor device features sizes.
SUMMARY
In one embodiment, a semiconductor device is disclosed. The
semiconductor device includes a substrate. A portion of the
substrate is formed to include a plurality of diffusion regions.
The plurality of diffusion regions respectively correspond to
active areas of the portion of the substrate within which one or
more processes are applied to modify one or more electrical
characteristics of the active areas of the portion of the
substrate. The plurality of diffusion regions include a first
p-type diffusion region, a second p-type diffusion region, a first
n-type diffusion region, and a second n-type diffusion region. The
first p-type diffusion region includes a first p-type active area
formed to have a direct electrical connection to a common node. The
second p-type diffusion region includes a second p-type active area
formed to have a direct electrical connection to the common node.
The first n-type diffusion region includes a first n-type active
area formed to have a direct electrical connection to the common
node. The second n-type diffusion region includes a second n-type
active area formed to have a direct electrical connection to the
common node.
The semiconductor device also includes a gate electrode level
region formed above the portion of the substrate. The gate
electrode level region includes a number of conductive features
defined to extend over the substrate in only a first parallel
direction. Each of the number of conductive features within the
gate electrode level region is fabricated from a respective
originating rectangular-shaped layout feature, such that a
centerline of each respective originating rectangular-shaped layout
feature is aligned with the first parallel direction.
The number of conductive features include conductive features that
respectively form a first PMOS transistor device gate electrode, a
second PMOS transistor device gate electrode, a first NMOS
transistor device gate electrode, and a second NMOS transistor
device gate electrode. The first PMOS transistor device gate
electrode is formed to extend over the first p-type diffusion
region to electrically interface with the first p-type active area
and thereby form a first PMOS transistor device. The second PMOS
transistor device gate electrode is formed to extend over the
second p-type diffusion region to electrically interface with the
second p-type active area and thereby form a second PMOS transistor
device. The first NMOS transistor device gate electrode is formed
to extend over the first n-type diffusion region to electrically
interface with the first n-type active area and thereby form a
first NMOS transistor device. The second NMOS transistor device
gate electrode is formed to extend over the second n-type diffusion
region to electrically interface with the second n-type active area
and thereby form a second NMOS transistor device.
The first PMOS transistor device gate electrode is electrically
connected to the second NMOS transistor device gate electrode.
Also, the second PMOS transistor device gate electrode is
electrically connected to the first NMOS transistor device gate
electrode. The first PMOS transistor device, the second PMOS
transistor device, the first NMOS transistor device, and the second
NMOS transistor device define a cross-coupled transistor
configuration having commonly oriented gate electrodes formed from
respective rectangular-shaped layout features.
Other aspects and advantages of the invention will become more
apparent from the following detailed description, taken in
conjunction with the accompanying drawings, illustrating by way of
example the present invention.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1A shows an SRAM bit cell circuit, in accordance with the
prior art;
FIG. 1B shows the SRAM bit cell of FIG. 1A with the inverters
expanded to reveal their respective internal transistor
configurations, in accordance with the prior art;
FIG. 2 shows a cross-coupled transistor configuration, in
accordance with one embodiment of the present invention;
FIG. 3A shows an example of gate electrode tracks defined within
the restricted gate level layout architecture, in accordance with
one embodiment of the present invention;
FIG. 3B shows the exemplary restricted gate level layout
architecture of FIG. 3A with a number of exemplary gate level
features defined therein, in accordance with one embodiment of the
present invention;
FIG. 4 shows diffusion and gate level layouts of a cross-coupled
transistor configuration, in accordance with one embodiment of the
present invention;
FIG. 5 shows a variation of the cross-coupled transistor
configuration of FIG. 4 in which the cross-coupled transistor
configuration is defined on three gate electrode tracks with
crossing gate electrode connections;
FIG. 6 shows a variation of the cross-coupled transistor
configuration of FIG. 4 in which the cross-coupled transistor
configuration is defined on four gate electrode tracks with
crossing gate electrode connections;
FIG. 7 shows a variation of the cross-coupled transistor
configuration of FIG. 4 in which the cross-coupled transistor
configuration is defined on two gate electrode tracks without
crossing gate electrode connections;
FIG. 8 shows a variation of the cross-coupled transistor
configuration of FIG. 4 in which the cross-coupled transistor
configuration is defined on three gate electrode tracks without
crossing gate electrode connections;
FIG. 9 shows a variation of the cross-coupled transistor
configuration of FIG. 4 in which the cross-coupled transistor
configuration is defined on four gate electrode tracks without
crossing gate electrode connections;
FIG. 10 shows a multi-level layout including a cross-coupled
transistor configuration defined on three gate electrode tracks
with crossing gate electrode connections, in accordance with one
embodiment of the present invention;
FIG. 11 shows a multi-level layout including a cross-coupled
transistor configuration defined on four gate electrode tracks with
crossing gate electrode connections, in accordance with one
embodiment of the present invention;
FIG. 12 shows a multi-level layout including a cross-coupled
transistor configuration defined on two gate electrode tracks
without crossing gate electrode connections, in accordance with one
embodiment of the present invention;
FIG. 13 shows a multi-level layout including a cross-coupled
transistor configuration defined on three gate electrode tracks
without crossing gate electrode connections, in accordance with one
embodiment of the present invention;
FIG. 14A shows a generalized multiplexer circuit in which all four
cross-coupled transistors are directly connected to the common
node, in accordance with one embodiment of the present
invention;
FIG. 14B shows an exemplary implementation of the multiplexer
circuit of FIG. 14A with a detailed view of the pull up logic, and
the pull down logic, in accordance with one embodiment of the
present invention;
FIG. 14C shows a multi-level layout of the multiplexer circuit of
FIG. 14B implemented using a restricted gate level layout
architecture cross-coupled transistor layout, in accordance with
one embodiment of the present invention;
FIG. 15A shows the multiplexer circuit of FIG. 14A in which two
cross-coupled transistors remain directly connected to the common
node, and in which two cross-coupled transistors are positioned
outside the pull up logic and pull down logic, respectively,
relative to the common node, in accordance with one embodiment of
the present invention;
FIG. 15B shows an exemplary implementation of the multiplexer
circuit of FIG. 15A with a detailed view of the pull up logic and
the pull down logic, in accordance with one embodiment of the
present invention;
FIG. 15C shows a multi-level layout of the multiplexer circuit of
FIG. 15B implemented using a restricted gate level layout
architecture cross-coupled transistor layout, in accordance with
one embodiment of the present invention;
FIG. 16A shows a generalized multiplexer circuit in which the
cross-coupled transistors are connected to form two transmission
gates to the common node, in accordance with one embodiment of the
present invention;
FIG. 16B shows an exemplary implementation of the multiplexer
circuit of FIG. 16A with a detailed view of the driving logic, in
accordance with one embodiment of the present invention;
FIG. 16C shows a multi-level layout of the multiplexer circuit of
FIG. 16B implemented using a restricted gate level layout
architecture cross-coupled transistor layout, in accordance with
one embodiment of the present invention;
FIG. 17A shows a generalized multiplexer circuit in which two
transistors of the four cross-coupled transistors are connected to
form a transmission gate to the common node, in accordance with one
embodiment of the present invention;
FIG. 17B shows an exemplary implementation of the multiplexer
circuit of FIG. 17A with a detailed view of the driving logic, in
accordance with one embodiment of the present invention;
FIG. 17C shows a multi-level layout of the multiplexer circuit of
FIG. 17B implemented using a restricted gate level layout
architecture cross-coupled transistor layout, in accordance with
one embodiment of the present invention;
FIG. 18A shows a generalized latch circuit implemented using the
cross-coupled transistor configuration, in accordance with one
embodiment of the present invention;
FIG. 18B shows an exemplary implementation of the latch circuit of
FIG. 18A with a detailed view of the pull up driver logic, the pull
down driver logic, the pull up feedback logic, and the pull down
feedback logic, in accordance with one embodiment of the present
invention;
FIG. 18C shows a multi-level layout of the latch circuit of FIG.
18B implemented using a restricted gate level layout architecture
cross-coupled transistor layout, in accordance with one embodiment
of the present invention;
FIG. 19A shows the latch circuit of FIG. 18A in which two
cross-coupled transistors remain directly connected to the common
node, and in which two cross-coupled transistors are positioned
outside the pull up driver logic and pull down driver logic,
respectively, relative to the common node, in accordance with one
embodiment of the present invention;
FIG. 19B shows an exemplary implementation of the latch circuit of
FIG. 19A with a detailed view of the pull up driver logic, the pull
down driver logic, the pull up feedback logic, and the pull down
feedback logic, in accordance with one embodiment of the present
invention;
FIG. 19C shows a multi-level layout of the latch circuit of FIG.
19B implemented using a restricted gate level layout architecture
cross-coupled transistor layout, in accordance with one embodiment
of the present invention;
FIG. 20A shows the latch circuit of FIG. 18A in which two
cross-coupled transistors remain directly connected to the common
node, and in which two cross-coupled transistors are positioned
outside the pull up feedback logic and pull down feedback logic,
respectively, relative to the common node, in accordance with one
embodiment of the present invention;
FIG. 20B shows an exemplary implementation of the latch circuit of
FIG. 20A with a detailed view of the pull up driver logic, the pull
down driver logic, the pull up feedback logic, and the pull down
feedback logic, in accordance with one embodiment of the present
invention;
FIG. 20C shows a multi-level layout of the latch circuit of FIG.
20B implemented using a restricted gate level layout architecture
cross-coupled transistor layout, in accordance with one embodiment
of the present invention;
FIG. 21A shows a generalized latch circuit in which cross-coupled
transistors are connected to form two transmission gates to the
common node, in accordance with one embodiment of the present
invention;
FIG. 21B shows an exemplary implementation of the latch circuit of
FIG. 21A with a detailed view of the driving logic and the feedback
logic, in accordance with one embodiment of the present
invention;
FIG. 21C shows a multi-level layout of the latch circuit of FIG.
21B implemented using a restricted gate level layout architecture
cross-coupled transistor layout, in accordance with one embodiment
of the present invention;
FIG. 22A shows a generalized latch circuit in which two transistors
of the four cross-coupled transistors are connected to form a
transmission gate to the common node, in accordance with one
embodiment of the present invention;
FIG. 22B shows an exemplary implementation of the latch circuit of
FIG. 22A with a detailed view of the driving logic, the pull up
feedback logic, and the pull down feedback logic, in accordance
with one embodiment of the present invention;
FIG. 22C shows a multi-level layout of the latch circuit of FIG.
22B implemented using a restricted gate level layout architecture
cross-coupled transistor layout, in accordance with one embodiment
of the present invention;
FIG. 23 shows an embodiment in which two PMOS transistors of the
cross-coupled transistors are respectively disposed over physically
separated p-type diffusion regions, two NMOS transistors of the
cross-coupled transistors are disposed over a common n-type
diffusion region, and the p-type and n-type diffusion regions
associated with the cross-coupled transistors are electrically
connected to a common node;
FIG. 24 shows an embodiment in which two PMOS transistors of the
cross-coupled transistors are disposed over a common p-type
diffusion region, two NMOS transistors of the cross-coupled
transistors are respectively disposed over physically separated
n-type diffusion regions, and the p-type and n-type diffusion
regions associated with the cross-coupled transistors are
electrically connected to a common node; and
FIG. 25 shows an embodiment in which two PMOS transistors of the
cross-coupled transistors are respectively disposed over physically
separated p-type diffusion regions, two NMOS transistors of the
cross-coupled transistors are respectively disposed over physically
separated n-type diffusion regions, and the p-type and n-type
diffusion regions associated with the cross-coupled transistors are
electrically connected to a common node.
FIG. 26 is an illustration showing an exemplary cross-coupled
transistor layout, in accordance with one embodiment of the present
invention.
FIG. 27 is an illustration showing the cross-coupled transistor
layout of FIG. 26, with the rectangular-shaped interconnect level
feature 26-101 replaced by an S-shaped interconnect level feature
27-144, in accordance with one embodiment of the present
invention.
FIG. 28 is an illustration showing the cross-coupled transistor
layout of FIG. 27, with a linear gate level feature 28-146 used to
make the vertical portion of the connection between the outer
contacts 26-126 and 26-128, in accordance with one embodiment of
the present invention.
FIG. 29 is an illustration showing a cross-coupled transistor
layout in which all four gate contacts 26-126, 26-128, 26-118, and
26-120 of the cross-coupled coupled transistors are placed
therebetween, in accordance with one embodiment of the present
invention.
FIG. 30 is an illustration showing the cross-coupled transistor
layout of FIG. 29, with multiple interconnect levels used to
connect the gate contacts 26-126 and 26-128, in accordance with one
embodiment of the present invention.
FIG. 31 is an illustration showing the cross-coupled transistor
layout of FIG. 29, with increased vertical separation between line
end spacings 31-184 and 31-186, in accordance with one embodiment
of the present invention.
FIG. 32 is an illustration showing the cross-coupled transistor
layout of FIG. 29, using an L-shaped interconnect level feature
32-188 to connect the gate contacts 26-120 and 26-118, in
accordance with one embodiment of the present invention.
FIG. 33 is an illustration showing the cross-coupled transistor
layout of FIG. 32, with the horizontal position of gate contacts
26-126 and 26-118 reversed, and with the horizontal position of
gate contacts 26-120 and 26-128 reversed, in accordance with one
embodiment of the present invention.
DETAILED DESCRIPTION
In the following description, numerous specific details are set
forth in order to provide a thorough understanding of the present
invention. It will be apparent, however, to one skilled in the art
that the present invention may be practiced without some or all of
these specific details. In other instances, well known process
operations have not been described in detail in order not to
unnecessarily obscure the present invention.
SRAM Bit Cell Configuration
FIG. 1A shows an SRAM (Static Random Access Memory) bit cell
circuit, in accordance with the prior art. The SRAM bit cell
includes two cross-coupled inverters 106 and 102. Specifically, an
output 106B of inverter 106 is connected to an input 102A of
inverter 102, and an output 102B of inverter 102 is connected to an
input 106A of inverter 106. The SRAM bit cell further includes two
NMOS pass transistors 100 and 104. The NMOS pass transistor 100 is
connected between a bit-line 103 and a node 109 corresponding to
both the output 106B of inverter 106 and the input 102A of inverter
102. The NMOS pass transistor 104 is connected between a bit-line
105 and a node 111 corresponding to both the output 102B of
inverter 102 and the input 106A of inverter 106. Also, the
respective gates of NMOS pass transistors 100 and 104 are each
connected to a word line 107, which controls access to the SRAM bit
cell through the NMOS pass transistors 100 and 104. The SRAM bit
cell requires bi-directional write, which means that when bit-line
103 is driven high, bit-line 105 is driven low, vice-versa. It
should be understood by those skilled in the art that a logic state
stored in the SRAM bit cell is maintained in a complementary manner
by nodes 109 and 111.
FIG. 1B shows the SRAM bit cell of FIG. 1A with the inverters 106
and 102 expanded to reveal their respective internal transistor
configurations, in accordance with the prior art. The inverter 106
include a PMOS transistor 115 and an NMOS transistor 113. The
respective gates of the PMOS and NMOS transistors 115, 113 are
connected together to form the input 106A of inverter 106. Also,
each of PMOS and NMOS transistors 115, 113 have one of their
respective terminals connected together to form the output 106B of
inverter 106. A remaining terminal of PMOS transistor 115 is
connected to a power supply 117. A remaining terminal of NMOS
transistor 113 is connected to a ground potential 119. Therefore,
PMOS and NMOS transistors 115, 113 are activated in a complementary
manner. When a high logic state is present at the input 106A of the
inverter 106, the NMOS transistor 113 is turned on and the PMOS
transistor 115 is turned off, thereby causing a low logic state to
be generated at output 106B of the inverter 106. When a low logic
state is present at the input 106A of the inverter 106, the NMOS
transistor 113 is turned off and the PMOS transistor 115 is turned
on, thereby causing a high logic state to be generated at output
106B of the inverter 106.
The inverter 102 is defined in an identical manner to inverter 106.
The inverter 102 include a PMOS transistor 121 and an NMOS
transistor 123. The respective gates of the PMOS and NMOS
transistors 121, 123 are connected together to form the input 102A
of inverter 102. Also, each of PMOS and NMOS transistors 121, 123
have one of their respective terminals connected together to form
the output 102B of inverter 102. A remaining terminal of PMOS
transistor 121 is connected to the power supply 117. A remaining
terminal of NMOS transistor 123 is connected to the ground
potential 119. Therefore, PMOS and NMOS transistors 121, 123 are
activated in a complementary manner. When a high logic state is
present at the input 102A of the inverter 102, the NMOS transistor
123 is turned on and the PMOS transistor 121 is turned off, thereby
causing a low logic state to be generated at output 102B of the
inverter 102. When a low logic state is present at the input 102A
of the inverter 102, the NMOS transistor 123 is turned off and the
PMOS transistor 121 is turned on, thereby causing a high logic
state to be generated at output 102B of the inverter 102.
Cross-Coupled Transistor Configuration
FIG. 2 shows a cross-coupled transistor configuration, in
accordance with one embodiment of the present invention. The
cross-coupled transistor configuration includes four transistors: a
PMOS transistor 401, an NMOS transistor 405, a PMOS transistor 403,
and an NMOS transistor 407. The PMOS transistor 401 has one
terminal connected to pull up logic 209A, and its other terminal
connected to a common node 495. The NMOS transistor 405 has one
terminal connected to pull down logic 211A, and its other terminal
connected to the common node 495. The PMOS transistor 403 has one
terminal connected to pull up logic 209B, and its other terminal
connected to the common node 495. The NMOS transistor 407 has one
terminal connected to pull down logic 211B, and its other terminal
connected to the common node 495. Respective gates of the PMOS
transistor 401 and the NMOS transistor 407 are both connected to a
gate node 491. Respective gates of the NMOS transistor 405 and the
PMOS transistor 403 are both connected to a gate node 493. The gate
nodes 491 and 493 are also referred to as control nodes 491 and
493, respectively. Moreover, each of the common node 495, the gate
node 491, and the gate node 493 can be referred to as an electrical
connection 495, 491, 493, respectively.
Based on the foregoing, the cross-coupled transistor configuration
includes four transistors: 1) a first PMOS transistor, 2) a first
NMOS transistor, 3) a second PMOS transistor, and 4) a second NMOS
transistor. Furthermore, the cross-coupled transistor configuration
includes three required electrical connections: 1) each of the four
transistors has one of its terminals connected to a same common
node, 2) gates of one PMOS transistor and one NMOS transistor are
both connected to a first gate node, and 3) gates of the other PMOS
transistor and the other NMOS transistor are both connected to a
second gate node.
It should be understood that the cross-coupled transistor
configuration of FIG. 2 represents a basic configuration of
cross-coupled transistors. In other embodiments, additional
circuitry components can be connected to any node within the
cross-coupled transistor configuration of FIG. 2. Moreover, in
other embodiments, additional circuitry components can be inserted
between any one or more of the cross-coupled transistors (401, 405,
403, 407) and the common node 495, without departing from the
cross-coupled transistor configuration of FIG. 2.
Difference Between SRAM Bit Cell and Cross-Coupled Transistor
Configurations
It should be understood that the SRAM bit cell of FIGS. 1A-1B does
not include a cross-coupled transistor configuration. In
particular, it should be understood that the cross-coupled
"inverters" 106 and 102 within the SRAM bit cell neither represent
nor infer a cross-coupled "transistor" configuration. As discussed
above, the cross-coupled transistor configuration requires that
each of the four transistors has one of its terminals electrically
connected to the same common node. This does not occur in the SRAM
bit cell.
With reference to the SRAM bit cell in FIG. 1B, the terminals of
PMOS transistor 115 and NMOS transistor 113 are connected together
at node 109, but the terminals of PMOS transistor 121 and NMOS
transistor 123 are connected together at node 111. More
specifically, the terminals of PMOS transistor 115 and NMOS
transistor 113 that are connected together at the output 106B of
the inverter are connected to the gates of each of PMOS transistor
121 and NMOS transistor 123, and therefore are not connected to
both of the terminals of PMOS transistor 121 and NMOS transistor
123. Therefore, the SRAM bit cell does not include four transistors
(two PMOS and two NMOS) that each have one of its terminals
connected together at a same common node. Consequently, the SRAM
bit cell does represent or include a cross-coupled transistor
configuration, such as described with regard to FIG. 2.
Restricted Gate Level Layout Architecture
The present invention implements a restricted gate level layout
architecture within a portion of a semiconductor chip. For the gate
level, a number of parallel virtual lines are defined to extend
across the layout. These parallel virtual lines are referred to as
gate electrode tracks, as they are used to index placement of gate
electrodes of various transistors within the layout. In one
embodiment, the parallel virtual lines which form the gate
electrode tracks are defined by a perpendicular spacing
therebetween equal to a specified gate electrode pitch. Therefore,
placement of gate electrode segments on the gate electrode tracks
corresponds to the specified gate electrode pitch. In another
embodiment the gate electrode tracks are spaced at variable pitches
greater than or equal to a specified gate electrode pitch.
FIG. 3A shows an example of gate electrode tracks 301A-301E defined
within the restricted gate level layout architecture, in accordance
with one embodiment of the present invention. Gate electrode tracks
301A-301E are formed by parallel virtual lines that extend across
the gate level layout of the chip, with a perpendicular spacing
therebetween equal to a specified gate electrode pitch 307. For
illustrative purposes, complementary diffusion regions 303 and 305
are shown in FIG. 3A. It should be understood that the diffusion
regions 303 and 305 are defined in the diffusion level below the
gate level. Also, it should be understood that the diffusion
regions 303 and 305 are provided by way of example and in no way
represent any limitation on diffusion region size, shape, and/or
placement within the diffusion level relative to the restricted
gate level layout architecture.
Within the restricted gate level layout architecture, a gate level
feature layout channel is defined about a given gate electrode
track so as to extend between gate electrode tracks adjacent to the
given gate electrode track. For example, gate level feature layout
channels 301A-1 through 301E-1 are defined about gate electrode
tracks 301A through 301E, respectively. It should be understood
that each gate electrode track has a corresponding gate level
feature layout channel. Also, for gate electrode tracks positioned
adjacent to an edge of a prescribed layout space, e.g., adjacent to
a cell boundary, the corresponding gate level feature layout
channel extends as if there were a virtual gate electrode track
outside the prescribed layout space, as illustrated by gate level
feature layout channels 301A-1 and 301E-1. It should be further
understood that each gate level feature layout channel is defined
to extend along an entire length of its corresponding gate
electrode track. Thus, each gate level feature layout channel is
defined to extend across the gate level layout within the portion
of the chip to which the gate level layout is associated.
Within the restricted gate level layout architecture, gate level
features associated with a given gate electrode track are defined
within the gate level feature layout channel associated with the
given gate electrode track. A contiguous gate level feature can
include both a portion which defines a gate electrode of a
transistor, and a portion that does not define a gate electrode of
a transistor. Thus, a contiguous gate level feature can extend over
both a diffusion region and a dielectric region of an underlying
chip level. In one embodiment, each portion of a gate level feature
that forms a gate electrode of a transistor is positioned to be
substantially centered upon a given gate electrode track.
Furthermore, in this embodiment, portions of the gate level feature
that do not form a gate electrode of a transistor can be positioned
within the gate level feature layout channel associated with the
given gate electrode track. Therefore, a given gate level feature
can be defined essentially anywhere within a given gate level
feature layout channel, so long as gate electrode portions of the
given gate level feature are centered upon the gate electrode track
corresponding to the given gate level feature layout channel, and
so long as the given gate level feature complies with design rule
spacing requirements relative to other gate level features in
adjacent gate level layout channels. Additionally, physical contact
is prohibited between gate level features defined in gate level
feature layout channels that are associated with adjacent gate
electrode tracks.
FIG. 3B shows the exemplary restricted gate level layout
architecture of FIG. 3A with a number of exemplary gate level
features 309-323 defined therein, in accordance with one embodiment
of the present invention. The gate level feature 309 is defined
within the gate level feature layout channel 301A-1 associated with
gate electrode track 301A. The gate electrode portions of gate
level feature 309 are substantially centered upon the gate
electrode track 301A. Also, the non-gate electrode portions of gate
level feature 309 maintain design rule spacing requirements with
gate level features 311 and 313 defined within adjacent gate level
feature layout channel 301B-1. Similarly, gate level features
311-323 are defined within their respective gate level feature
layout channel, and have their gate electrode portions
substantially centered upon the gate electrode track corresponding
to their respective gate level feature layout channel. Also, it
should be appreciated that each of gate level features 311-323
maintains design rule spacing requirements with gate level features
defined within adjacent gate level feature layout channels, and
avoids physical contact with any another gate level feature defined
within adjacent gate level feature layout channels.
A gate electrode corresponds to a portion of a respective gate
level feature that extends over a diffusion region, wherein the
respective gate level feature is defined in its entirety within a
gate level feature layout channel. Each gate level feature is
defined within its gate level feature layout channel without
physically contacting another gate level feature defined within an
adjoining gate level feature layout channel. As illustrated by the
example gate level feature layout channels 301A-1 through 301E-1 of
FIG. 3B, each gate level feature layout channel is associated with
a given gate electrode track and corresponds to a layout region
that extends along the given gate electrode track and
perpendicularly outward in each opposing direction from the given
gate electrode track to a closest of either an adjacent gate
electrode track or a virtual gate electrode track outside a layout
boundary.
Some gate level features may have one or more contact head portions
defined at any number of locations along their length. A contact
head portion of a given gate level feature is defined as a segment
of the gate level feature having a height and a width of sufficient
size to receive a gate contact structure, wherein "width" is
defined across the substrate in a direction perpendicular to the
gate electrode track of the given gate level feature, and wherein
"height" is defined across the substrate in a direction parallel to
the gate electrode track of the given gate level feature. It should
be appreciated that a contact head of a gate level feature, when
viewed from above, can be defined by essentially any layout shape,
including a square or a rectangle. Also, depending on layout
requirements and circuit design, a given contact head portion of a
gate level feature may or may not have a gate contact defined
thereabove.
A gate level of the various embodiments disclosed herein is defined
as a restricted gate level, as discussed above. Some of the gate
level features form gate electrodes of transistor devices. Others
of the gate level features can form conductive segments extending
between two points within the gate level. Also, others of the gate
level features may be non-functional with respect to integrated
circuit operation. It should be understood that the each of the
gate level features, regardless of function, is defined to extend
across the gate level within their respective gate level feature
layout channels without physically contacting other gate level
features defined with adjacent gate level feature layout
channels.
In one embodiment, the gate level features are defined to provide a
finite number of controlled layout shape-to-shape lithographic
interactions which can be accurately predicted and optimized for in
manufacturing and design processes. In this embodiment, the gate
level features are defined to avoid layout shape-to-shape spatial
relationships which would introduce adverse lithographic
interaction within the layout that cannot be accurately predicted
and mitigated with high probability. However, it should be
understood that changes in direction of gate level features within
their gate level layout channels are acceptable when corresponding
lithographic interactions are predictable and manageable.
It should be understood that each of the gate level features,
regardless of function, is defined such that no gate level feature
along a given gate electrode track is configured to connect
directly within the gate level to another gate level feature
defined along a different gate electrode track without utilizing a
non-gate level feature. Moreover, each connection between gate
level features that are placed within different gate level layout
channels associated with different gate electrode tracks is made
through one or more non-gate level features, which may be defined
in higher interconnect levels, i.e., through one or more
interconnect levels above the gate level, or by way of local
interconnect features at or below the gate level.
Cross-Coupled Transistor Layouts
As discussed above, the cross-coupled transistor configuration
includes four transistors (2 PMOS transistors and 2 NMOS
transistors). In various embodiments of the present invention, gate
electrodes defined in accordance with the restricted gate level
layout architecture are respectively used to form the four
transistors of a cross-coupled transistor configuration layout.
FIG. 4 shows diffusion and gate level layouts of a cross-coupled
transistor configuration, in accordance with one embodiment of the
present invention. The cross-coupled transistor layout of FIG. 4
includes the first PMOS transistor 401 defined by a gate electrode
401A extending along a gate electrode track 450 and over a p-type
diffusion region 480. The first NMOS transistor 407 is defined by a
gate electrode 407A extending along a gate electrode track 456 and
over an n-type diffusion region 486. The second PMOS transistor 403
is defined by a gate electrode 403A extending along the gate
electrode track 456 and over a p-type diffusion region 482. The
second NMOS transistor 405 is defined by a gate electrode 405A
extending along the gate electrode track 450 and over an n-type
diffusion region 484.
The gate electrodes 401A and 407A of the first PMOS transistor 401
and first NMOS transistor 407, respectively, are electrically
connected to the first gate node 491 so as to be exposed to a
substantially equivalent gate electrode voltage. Similarly, the
gate electrodes 403A and 405A of the second PMOS transistor 403 and
second NMOS transistor 405, respectively, are electrically
connected to the second gate node 493 so as to be exposed to a
substantially equivalent gate electrode voltage. Also, each of the
four transistors 401, 403, 405, 407 has a respective diffusion
terminal electrically connected to the common output node 495.
The cross-coupled transistor layout can be implemented in a number
of different ways within the restricted gate level layout
architecture. In the exemplary embodiment of FIG. 4, the gate
electrodes 401A and 405A of the first PMOS transistor 401 and
second NMOS transistor 405 are positioned along the same gate
electrode track 450. Similarly, the gate electrodes 403A and 407A
of the second PMOS transistor 403 and second NMOS transistor 407
are positioned along the same gate electrode track 456. Thus, the
particular embodiment of FIG. 4 can be characterized as a
cross-coupled transistor configuration defined on two gate
electrode tracks with crossing gate electrode connections.
FIG. 5 shows a variation of the cross-coupled transistor
configuration of FIG. 4 in which the cross-coupled transistor
configuration is defined on three gate electrode tracks with
crossing gate electrode connections. Specifically, the gate
electrode 401A of the first PMOS transistor 401 is defined on the
gate electrode track 450. The gate electrode 403A of the second
PMOS transistor 403 is defined on the gate electrode track 456. The
gate electrode 407A of the first NMOS transistor 407 is defined on
a gate electrode track 456. And, the gate electrode 405A of the
second NMOS transistor 405 is defined on a gate electrode track
448. Thus, the particular embodiment of FIG. 5 can be characterized
as a cross-coupled transistor configuration defined on three gate
electrode tracks with crossing gate electrode connections.
FIG. 6 shows a variation of the cross-coupled transistor
configuration of FIG. 4 in which the cross-coupled transistor
configuration is defined on four gate electrode tracks with
crossing gate electrode connections. Specifically, the gate
electrode 401A of the first PMOS transistor 401 is defined on the
gate electrode track 450. The gate electrode 403A of the second
PMOS transistor 403 is defined on the gate electrode track 456. The
gate electrode 407A of the first NMOS transistor 407 is defined on
a gate electrode track 458. And, the gate electrode 405A of the
second NMOS transistor 405 is defined on a gate electrode track
454. Thus, the particular embodiment of FIG. 6 can be characterized
as a cross-coupled transistor configuration defined on four gate
electrode tracks with crossing gate electrode connections.
FIG. 7 shows a variation of the cross-coupled transistor
configuration of FIG. 4 in which the cross-coupled transistor
configuration is defined on two gate electrode tracks without
crossing gate electrode connections. Specifically, the gate
electrode 401A of the first PMOS transistor 401 is defined on the
gate electrode track 450. The gate electrode 407A of the first NMOS
transistor 407 is also defined on a gate electrode track 450. The
gate electrode 403A of the second PMOS transistor 403 is defined on
the gate electrode track 456. And, the gate electrode 405A of the
second NMOS transistor 405 is also defined on a gate electrode
track 456. Thus, the particular embodiment of FIG. 7 can be
characterized as a cross-coupled transistor configuration defined
on two gate electrode tracks without crossing gate electrode
connections.
FIG. 8 shows a variation of the cross-coupled transistor
configuration of FIG. 4 in which the cross-coupled transistor
configuration is defined on three gate electrode tracks without
crossing gate electrode connections. Specifically, the gate
electrode 401A of the first PMOS transistor 401 is defined on the
gate electrode track 450. The gate electrode 407A of the first NMOS
transistor 407 is also defined on a gate electrode track 450. The
gate electrode 403A of the second PMOS transistor 403 is defined on
the gate electrode track 454. And, the gate electrode 405A of the
second NMOS transistor 405 is defined on a gate electrode track
456. Thus, the particular embodiment of FIG. 8 can be characterized
as a cross-coupled transistor configuration defined on three gate
electrode tracks without crossing gate electrode connections.
FIG. 9 shows a variation of the cross-coupled transistor
configuration of FIG. 4 in which the cross-coupled transistor
configuration is defined on four gate electrode tracks without
crossing gate electrode connections. Specifically, the gate
electrode 401A of the first PMOS transistor 401 is defined on the
gate electrode track 450. The gate electrode 403A of the second
PMOS transistor 403 is defined on the gate electrode track 454. The
gate electrode 407A of the first NMOS transistor 407 is defined on
a gate electrode track 452. And, the gate electrode 405A of the
second NMOS transistor 405 is defined on a gate electrode track
456. Thus, the particular embodiment of FIG. 9 can be characterized
as a cross-coupled transistor configuration defined on four gate
electrode tracks without crossing gate electrode connections.
It should be appreciated that although the cross-coupled
transistors 401, 403, 405, 407 of FIGS. 4-9 are depicted as having
their own respective diffusion region 480, 482, 484, 486,
respectively, other embodiments may utilize a contiguous p-type
diffusion region for PMOS transistors 401 and 403, and/or utilize a
contiguous n-type diffusion region for NMOS transistors 405 and
407. Moreover, although the example layouts of FIGS. 4-9 depict the
p-type diffusion regions 480 and 482 in a vertically aligned
position, it should be understood that the p-type diffusion regions
480 and 482 may not be vertically aligned in other embodiments.
Similarly, although the example layouts of FIGS. 4-9 depict the
n-type diffusion regions 484 and 486 in a vertically aligned
position, it should be understood that the n-type diffusion regions
484 and 486 may not be vertically aligned in other embodiments.
For example, the cross-coupled transistor layout of FIG. 4 includes
the first PMOS transistor 401 defined by the gate electrode 401A
extending along the gate electrode track 450 and over a first
p-type diffusion region 480. And, the second PMOS transistor 403 is
defined by the gate electrode 403A extending along the gate
electrode track 456 and over a second p-type diffusion region 482.
The first NMOS transistor 407 is defined by the gate electrode 407A
extending along the gate electrode track 456 and over a first
n-type diffusion region 486. And, the second NMOS transistor 405 is
defined by the gate electrode 405A extending along the gate
electrode track 450 and over a second n-type diffusion region
484.
The gate electrode tracks 450 and 456 extend in a first parallel
direction. At least a portion of the first p-type diffusion region
480 and at least a portion of the second p-type diffusion region
482 are formed over a first common line of extent that extends
across the substrate perpendicular to the first parallel direction
of the gate electrode tracks 450 and 456. Additionally, at least a
portion of the first n-type diffusion region 486 and at least a
portion of the second n-type diffusion region 484 are formed over a
second common line of extent that extends across the substrate
perpendicular to the first parallel direction of the gate electrode
tracks 450 and 456.
FIG. 14C shows that two PMOS transistors (401A and 403A) of the
cross-coupled transistors are disposed over a common p-type
diffusion region (PDIFF), two NMOS transistors (405A and 407A) of
the cross-coupled transistors are disposed over a common n-type
diffusion region (NDIFF), and the p-type (PDIFF) and n-type (NDIFF)
diffusion regions associated with the cross-coupled transistors are
electrically connected to a common node 495. The gate electrodes of
the cross-coupled transistors (401A, 403A, 405A, 407A) extend in a
first parallel direction. At least a portion of a first p-type
diffusion region associated with the first PMOS transistor 401A and
at least a portion of a second p-type diffusion region associated
with the second PMOS transistor 403A are formed over a first common
line of extent that extends across the substrate perpendicular to
the first parallel direction of the gate electrodes. Additionally,
at least a portion of a first n-type diffusion region associated
with the first NMOS transistor 405A and at least a portion of a
second n-type diffusion region associated with the second NMOS
transistor 407A are formed over a second common line of extent that
extends across the substrate perpendicular to the first parallel
direction of the gate electrodes.
In another embodiment, two PMOS transistors of the cross-coupled
transistors are respectively disposed over physically separated
p-type diffusion regions, two NMOS transistors of the cross-coupled
transistors are disposed over a common n-type diffusion region, and
the p-type and n-type diffusion regions associated with the
cross-coupled transistors are electrically connected to a common
node. FIG. 23 illustrates a cross-coupled transistor layout
embodiment in which two PMOS transistors (2301 and 2303) of the
cross-coupled transistors are respectively disposed over physically
separated p-type diffusion regions (2302 and 2304), two NMOS
transistors (2305 and 2307) of the cross-coupled transistors are
disposed over a common n-type diffusion region 2306, and the p-type
(2302, 2304) and n-type 2306 diffusion regions associated with the
cross-coupled transistors are electrically connected to a common
node 2309.
FIG. 23 shows that the gate electrodes of the cross-coupled
transistors (2301, 2303, 2305, 2307) extend in a first parallel
direction 2311. FIG. 23 also shows that the first 2302 and second
2304 p-type diffusion regions are formed in a spaced apart manner
relative to the first parallel direction 2311 of the gate
electrodes, such that no single line of extent that extends across
the substrate in a direction 2313 perpendicular to the first
parallel direction 2311 of the gate electrodes intersects both the
first 2302 and second 2304 p-type diffusion regions. Also, FIG. 23
shows that at least a portion of a first n-type diffusion region
(part of 2306) associated with a first NMOS transistor 2305 and at
least a portion of a second n-type diffusion region (part of 2306)
associated with a second NMOS transistor 2307 are formed over a
common line of extent that extends across the substrate in the
direction 2313 perpendicular to the first parallel direction 2311
of the gate electrodes.
In another embodiment, two PMOS transistors of the cross-coupled
transistors are disposed over a common p-type diffusion region, two
NMOS transistors of the cross-coupled transistors are respectively
disposed over physically separated n-type diffusion regions, and
the p-type and n-type diffusion regions associated with the
cross-coupled transistors are electrically connected to a common
node. FIG. 24 shows the cross-coupled transistor embodiment of FIG.
23, with the p-type (2302 and 2304) and n-type 2306 diffusion
regions of FIG. 23 reversed to n-type (2402 and 2404) and p-type
2406 diffusion regions, respectively. FIG. 24 illustrates a
cross-coupled transistor layout embodiment in which two PMOS
transistors (2405 and 2407) of the cross-coupled transistors are
disposed over a common p-type diffusion region 2406, two NMOS
transistors (2401 and 2403) of the cross-coupled transistors are
respectively disposed over physically separated n-type diffusion
regions (2402 and 2404), and the p-type 2406 and n-type (2402 and
2404) diffusion regions associated with the cross-coupled
transistors are electrically connected to a common node 2409.
FIG. 24 shows that the gate electrodes of the cross-coupled
transistors (2401, 2403, 2405, 2407) extend in a first parallel
direction 2411. FIG. 24 also shows that at least a portion of a
first p-type diffusion region (part of 2406) associated with a
first PMOS transistor 2405 and at least a portion of a second
p-type diffusion region (part of 2406) associated with a second
PMOS transistor 2407 are formed over a common line of extent that
extends across the substrate in a direction 2413 perpendicular to
the first parallel direction 2411 of the gate electrodes. Also,
FIG. 24 shows that the first 2402 and second 2404 n-type diffusion
regions are formed in a spaced apart manner relative to the first
parallel direction 2411, such that no single line of extent that
extends across the substrate in the direction 2413 perpendicular to
the first parallel direction 2411 of the gate electrodes intersects
both the first 2402 and second 2404 n-type diffusion regions.
In yet another embodiment, two PMOS transistors of the
cross-coupled transistors are respectively disposed over physically
separated p-type diffusion regions, two NMOS transistors of the
cross-coupled transistors are respectively disposed over physically
separated n-type diffusion regions, and the p-type and n-type
diffusion regions associated with the cross-coupled transistors are
electrically connected to a common node. FIG. 25 shows a
cross-coupled transistor layout embodiment in which two PMOS
transistors (2501 and 2503) of the cross-coupled transistors are
respectively disposed over physically separated p-type diffusion
regions (2502 and 2504), two NMOS transistors (2505 and 2507) of
the cross-coupled transistors are respectively disposed over
physically separated n-type diffusion regions (2506 and 2508), and
the p-type (2502 and 2504) and n-type (2506 and 2508) diffusion
regions associated with the cross-coupled transistors are
electrically connected to a common node 2509.
FIG. 25 shows that the gate electrodes of the cross-coupled
transistors (2501, 2503, 2505, 2507) extend in a first parallel
direction 2511. FIG. 25 also shows that the first 2502 and second
2504 p-type diffusion regions are formed in a spaced apart manner
relative to the first parallel direction 2511, such that no single
line of extent that extends across the substrate in a direction
2513 perpendicular to the first parallel direction 2511 of the gate
electrodes intersects both the first 2502 and second 2504 p-type
diffusion regions. Also, FIG. 25 shows that the first 2506 and
second 2508 n-type diffusion regions are formed in a spaced apart
manner relative to the first parallel direction 2511, such that no
single line of extent that extends across the substrate in the
direction 2513 perpendicular to the first parallel direction 2511
of the gate electrodes intersects both the first 2506 and second
2508 n-type diffusion regions.
In FIGS. 4-9, the gate electrode connections are electrically
represented by lines 491 and 493, and the common node electrical
connection is represented by line 495. It should be understood that
in layout space each of the gate electrode electrical connections
491, 493, and the common node electrical connection 495 can be
structurally defined by a number of layout shapes extending through
multiple chip levels. FIGS. 10-13 show examples of how the gate
electrode electrical connections 491, 493, and the common node
electrical connection 495 can be defined in different embodiments.
It should be understood that the example layouts of FIGS. 10-13 are
provided by way of example and in no way represent an exhaustive
set of possible multi-level connections that can be utilized for
the gate electrode electrical connections 491, 493, and the common
node electrical connection 495.
FIG. 10 shows a multi-level layout including a cross-coupled
transistor configuration defined on three gate electrode tracks
with crossing gate electrode connections, in accordance with one
embodiment of the present invention. The layout of FIG. 10
represents an exemplary implementation of the cross-coupled
transistor embodiment of FIG. 5. The electrical connection 491
between the gate electrode 401A of the first PMOS transistor 401
and the gate electrode 407A of the first NMOS transistor 407 is
formed by a multi-level connection that includes a gate contact
1001, a (two-dimensional) metal-1 structure 1003, and a gate
contact 1005. The electrical connection 493 between the gate
electrode 403A of the second PMOS transistor 403 and the gate
electrode 405A of the second NMOS transistor 405 is formed by a
multi-level connection that includes a gate contact 1007, a
(two-dimensional) metal-1 structure 1009, and a gate contact 1011.
The output node electrical connection 495 is formed by a
multi-level connection that includes a diffusion contact 1013, a
(two-dimensional) metal-1 structure 1015, a diffusion contact 1017,
and a diffusion contact 1019.
FIG. 11 shows a multi-level layout including a cross-coupled
transistor configuration defined on four gate electrode tracks with
crossing gate electrode connections, in accordance with one
embodiment of the present invention. The layout of FIG. 11
represents an exemplary implementation of the cross-coupled
transistor embodiment of FIG. 6. The electrical connection 491
between the gate electrode 401A of the first PMOS transistor 401
and the gate electrode 407A of the first NMOS transistor 407 is
formed by a multi-level connection that includes a gate contact
1101, a (two-dimensional) metal-1 structure 1103, and a gate
contact 1105. The electrical connection 493 between the gate
electrode 403A of the second PMOS transistor 403 and the gate
electrode 405A of the second NMOS transistor 405 is formed by a
multi-level connection that includes a gate contact 1107, a
(one-dimensional) metal-1 structure 1109, a via 1111, a
(one-dimensional) metal-2 structure 1113, a via 1115, a
(one-dimensional) metal-1 structure 1117, and a gate contact 1119.
The output node electrical connection 495 is formed by a
multi-level connection that includes a diffusion contact 1121, a
(two-dimensional) metal-1 structure 1123, a diffusion contact 1125,
and a diffusion contact 1127.
FIG. 12 shows a multi-level layout including a cross-coupled
transistor configuration defined on two gate electrode tracks
without crossing gate electrode connections, in accordance with one
embodiment of the present invention. The layout of FIG. 12
represents an exemplary implementation of the cross-coupled
transistor embodiment of FIG. 7. The gate electrodes 401A and 407A
of the first PMOS transistor 401 and first NMOS transistor 407,
respectively, are formed by a contiguous gate level structure
placed on the gate electrode track 450. Therefore, the electrical
connection 491 between the gate electrodes 401A and 407A is made
directly within the gate level along the single gate electrode
track 450. Similarly, the gate electrodes 403A and 405A of the
second PMOS transistor 403 and second NMOS transistor 405,
respectively, are formed by a contiguous gate level structure
placed on the gate electrode track 456. Therefore, the electrical
connection 493 between the gate electrodes 403A and 405A is made
directly within the gate level along the single gate electrode
track 456. The output node electrical connection 495 is formed by a
multi-level connection that includes a diffusion contact 1205, a
(one-dimensional) metal-1 structure 1207, and a diffusion contact
1209.
Further with regard to FIG. 12, it should be noted that when the
gate electrodes 401A and 407A of the first PMOS transistor 401 and
first NMOS transistor 407, respectively, are formed by a contiguous
gate level structure, and when the gate electrodes 403A and 405A of
the second PMOS transistor 403 and second NMOS transistor 405,
respectively, are formed by a contiguous gate level structure, the
corresponding cross-coupled transistor layout may include
electrical connections between diffusion regions associated with
the four cross-coupled transistors 401, 407, 403, 405, that cross
in layout space without electrical communication therebetween. For
example, diffusion region 1220 of PMOS transistor 403 is
electrically connected to diffusion region 1222 of NMOS transistor
407 as indicated by electrical connection 1224, and diffusion
region 1230 of PMOS transistor 401 is electrically connected to
diffusion region 1232 of NMOS transistor 405 as indicated by
electrical connection 1234, wherein electrical connections 1224 and
1234 cross in layout space without electrical communication
therebetween.
FIG. 13 shows a multi-level layout including a cross-coupled
transistor configuration defined on three gate electrode tracks
without crossing gate electrode connections, in accordance with one
embodiment of the present invention. The layout of FIG. 13
represents an exemplary implementation of the cross-coupled
transistor embodiment of FIG. 8. The gate electrodes 401A and 407A
of the first PMOS transistor 401 and first NMOS transistor 407,
respectively, are formed by a contiguous gate level structure
placed on the gate electrode track 450. Therefore, the electrical
connection 491 between the gate electrodes 401A and 407A is made
directly within the gate level along the single gate electrode
track 450. The electrical connection 493 between the gate electrode
403A of the second PMOS transistor 403 and the gate electrode 405A
of the second NMOS transistor 405 is formed by a multi-level
connection that includes a gate contact 1303, a (one-dimensional)
metal-1 structure 1305, and a gate contact 1307. The output node
electrical connection 495 is formed by a multi-level connection
that includes a diffusion contact 1311, a (one-dimensional) metal-1
structure 1313, and a diffusion contact 1315.
In one embodiment, electrical connection of the diffusion regions
of the cross-coupled transistors to the common node 495 can be made
using one or more local interconnect conductors defined at or below
the gate level itself. This embodiment may also combine local
interconnect conductors with conductors in higher levels (above the
gate level) by way of contacts and/or vias to make the electrical
connection of the diffusion regions of the cross-coupled
transistors to the common node 495. Additionally, in various
embodiments, conductive paths used to electrically connect the
diffusion regions of the cross-coupled transistors to the common
node 495 can be defined to traverse over essentially any area of
the chip as required to accommodate a routing solution for the
chip.
Also, it should be appreciated that because the n-type and p-type
diffusion regions are physically separate, and because the p-type
diffusion regions for the two PMOS transistors of the cross-coupled
transistors can be physically separate, and because the n-type
diffusion regions for the two NMOS transistors of the cross-coupled
transistors can be physically separate, it is possible in various
embodiments to have each of the four cross-coupled transistors
disposed at arbitrary locations in the layout relative to each
other. Therefore, unless necessitated by electrical performance or
other layout influencing conditions, it is not required that the
four cross-coupled transistors be located within a prescribed
proximity to each other in the layout. Although, location of the
cross-coupled transistors within a prescribed proximity to each
other is not precluded, and may be desirable in certain circuit
layouts.
In the exemplary embodiments disclosed herein, it should be
understood that diffusion regions are not restricted in size. In
other words, any given diffusion region can be sized in an
arbitrary manner as required to satisfy electrical and/or layout
requirements. Additionally, any given diffusion region can be
shaped in an arbitrary manner as required to satisfy electrical
and/or layout requirements. Also, it should be understood that the
four transistors of the cross-coupled transistor configuration, as
defined in accordance with the restricted gate level layout
architecture, are not required to be the same size. In different
embodiments, the four transistors of the cross-coupled transistor
configuration can either vary in size (transistor width or
transistor gate length) or have the same size, depending on the
applicable electrical and/or layout requirements.
Additionally, it should be understood that the four transistors of
the cross-coupled transistor configuration are not required to be
placed in close proximity to each, although they may be closely
placed in some embodiments. More specifically, because connections
between the transistors of the cross-coupled transistor
configuration can be made by routing through as least one higher
interconnect level, there is freedom in placement of the four
transistors of the cross-coupled transistor configuration relative
to each other. Although, it should be understood that a proximity
of the four transistors of the cross-coupled transistor
configuration may be governed in certain embodiments by electrical
and/or layout optimization requirements.
It should be appreciated that the cross-coupled transistor
configurations and corresponding layouts implemented using the
restricted gate level layout architecture, as described with regard
to FIGS. 2-13, and/or variants thereof, can be used to form many
different electrical circuits. For example, a portion of a modern
semiconductor chip is likely to include a number of multiplexer
circuits and/or latch circuits. Such multiplexer and/or latch
circuits can be defined using cross-coupled transistor
configurations and corresponding layouts based on the restricted
gate level layout architecture, as disclosed herein. Example
multiplexer embodiments implemented using the restricted gate level
layout architecture and corresponding cross-coupled transistor
configurations are described with regard to FIGS. 14A-17C. Example
latch embodiments implemented using the restricted gate level
layout architecture and corresponding cross-coupled transistor
configurations are described with regard to FIGS. 18A-22C. It
should be understood that the multiplexer and latch embodiments
described with regard to FIGS. 14A-22C are provided by way of
example and do not represent an exhaustive set of possible
multiplexer and latch embodiments.
Example Multiplexer Embodiments
FIG. 14A shows a generalized multiplexer circuit in which all four
cross-coupled transistors 401, 405, 403, 407 are directly connected
to the common node 495, in accordance with one embodiment of the
present invention. As previously discussed, gates of the first PMOS
transistor 401 and first NMOS transistor 407 are electrically
connected, as shown by electrical connection 491. Also, gates of
the second PMOS transistor 403 and second NMOS transistor 405 are
electrically connected, as shown by electrical connection 493. Pull
up logic 1401 is electrically connected to the first PMOS
transistor 401 at a terminal opposite the common node 495. Pull
down logic 1403 is electrically connected to the second NMOS
transistor 405 at a terminal opposite the common node 495. Also,
pull up logic 1405 is electrically connected to the second PMOS
transistor 403 at a terminal opposite the common node 495. Pull
down logic 1407 is electrically connected to the first NMOS
transistor 407 at a terminal opposite the common node 495.
FIG. 14B shows an exemplary implementation of the multiplexer
circuit of FIG. 14A with a detailed view of the pull up logic 1401
and 1405, and the pull down logic 1403 and 1407, in accordance with
one embodiment of the present invention. The pull up logic 1401 is
defined by a PMOS transistor 1401A connected between a power supply
(VDD) and a terminal 1411 of the first PMOS transistor 401 opposite
the common node 495. The pull down logic 1403 is defined by an NMOS
transistor 1403A connected between a ground potential (GND) and a
terminal 1413 of the second NMOS transistor 405 opposite the common
node 495. Respective gates of the PMOS transistor 1401A and NMOS
transistor 1403A are connected together at a node 1415. The pull up
logic 1405 is defined by a PMOS transistor 1405A connected between
the power supply (VDD) and a terminal 1417 of the second PMOS
transistor 403 opposite the common node 495. The pull down logic
1407 is defined by an NMOS transistor 1407A connected between a
ground potential (GND) and a terminal 1419 of the first NMOS
transistor 407 opposite the common node 495. Respective gates of
the PMOS transistor 1405A and NMOS transistor 1407A are connected
together at a node 1421. It should be understood that the
implementations of pull up logic 1401, 1405 and pull down logic
1403, 1407 as shown in FIG. 14B are exemplary. In other
embodiments, logic different than that shown in FIG. 14B can be
used to implement the pull up logic 1401, 1405 and the pull down
logic 1403, 1407.
FIG. 14C shows a multilevel layout of the multiplexer circuit of
FIG. 14B implemented using a restricted gate level layout
architecture cross-coupled transistor layout, in accordance with
one embodiment of the present invention. The electrical connection
491 between the gate electrode 401A of the first PMOS transistor
401 and the gate electrode 407A of the first NMOS transistor 407 is
formed by a multi-level connection that includes a gate contact
1445, a (two-dimensional) metal-1 structure 1447, and a gate
contact 1449. The electrical connection 493 between the gate
electrode 403A of the second PMOS transistor 403 and the gate
electrode 405A of the second NMOS transistor 405 is formed by a
multi-level connection that includes a gate contact 1431, a
(one-dimensional) metal-1 structure 1433, a via 1435, a
(one-dimensional) metal-2 structure 1436, a via 1437, a
(one-dimensional) metal-1 structure 1439, and a gate contact 1441.
The common node electrical connection 495 is formed by a
multi-level connection that includes a diffusion contact 1451, a
(one-dimensional) metal-1 structure 1453, a via 1455, a
(one-dimensional) metal-2 structure 1457, a via 1459, a
(one-dimensional) metal-1 structure 1461, and a diffusion contact
1463. Respective gates of the PMOS transistor 1401A and NMOS
transistor 1403A are connected to the node 1415 by a gate contact
1443. Also, respective gates of the PMOS transistor 1405A and NMOS
transistor 1407A are connected to the node 1421 by a gate contact
1465.
FIG. 15A shows the multiplexer circuit of FIG. 14A in which the two
cross-coupled transistors 401 and 405 remain directly connected to
the common node 495, and in which the two cross-coupled transistors
403 and 407 are positioned outside the pull up logic 1405 and pull
down logic 1407, respectively, relative to the common node 495, in
accordance with one embodiment of the present invention. Pull up
logic 1405 is electrically connected between the second PMOS
transistor 403 and the common node 495. Pull down logic 1407 is
electrically connected between the first NMOS transistor 407 and
the common node 495. With the exception of repositioning the
PMOS/NMOS transistors 403/407 outside of their pull up/down logic
1405/1407 relative to the common node 495, the circuit of FIG. 15A
is the same as the circuit of FIG. 14A.
FIG. 15B shows an exemplary implementation of the multiplexer
circuit of FIG. 15A with a detailed view of the pull up logic 1401
and 1405, and the pull down logic 1403 and 1407, in accordance with
one embodiment of the present invention. As previously discussed
with regard to FIG. 14B, the pull up logic 1401 is defined by the
PMOS transistor 1401A connected between VDD and the terminal 1411
of the first PMOS transistor 401 opposite the common node 495.
Also, the pull down logic 1403 is defined by NMOS transistor 1403A
connected between GND and the terminal 1413 of the second NMOS
transistor 405 opposite the common node 495. Respective gates of
the PMOS transistor 1401A and NMOS transistor 1403A are connected
together at the node 1415. The pull up logic 1405 is defined by the
PMOS transistor 1405A connected between the second PMOS transistor
403 and the common node 495. The pull down logic 1407 is defined by
the NMOS transistor 1407A connected between the first NMOS
transistor 407 and the common node 495. Respective gates of the
PMOS transistor 1405A and NMOS transistor 1407A are connected
together at the node 1421. It should be understood that the
implementations of pull up logic 1401, 1405 and pull down logic
1403, 1407 as shown in FIG. 15B are exemplary. In other
embodiments, logic different than that shown in FIG. 15B can be
used to implement the pull up logic 1401, 1405 and the pull down
logic 1403, 1407.
FIG. 15C shows a multi-level layout of the multiplexer circuit of
FIG. 15B implemented using a restricted gate level layout
architecture cross-coupled transistor layout, in accordance with
one embodiment of the present invention. The electrical connection
491 between the gate electrode 401A of the first PMOS transistor
401 and the gate electrode 407A of the first NMOS transistor 407 is
formed by a multi-level connection that includes a gate contact
1501, a (one-dimensional) metal-1 structure 1503, a via 1505, a
(one-dimensional) metal-2 structure 1507, a via 1509, a
(one-dimensional) metal-1 structure 1511, and a gate contact 1513.
The electrical connection 493 between the gate electrode 403A of
the second PMOS transistor 403 and the gate electrode 405A of the
second NMOS transistor 405 is formed by a multi-level connection
that includes a gate contact 1515, a (two-dimensional) metal-1
structure 1517, and a gate contact 1519. The common node electrical
connection 495 is formed by a multi-level connection that includes
a diffusion contact 1521, a (one-dimensional) metal-1 structure
1523, a via 1525, a (one-dimensional) metal-2 structure 1527, a via
1529, a (one-dimensional) metal-1 structure 1531, and a diffusion
contact 1533. Respective gates of the PMOS transistor 1401A and
NMOS transistor 1403A are connected to the node 1415 by a gate
contact 1535. Also, respective gates of the PMOS transistor 1405A
and NMOS transistor 1407A are connected to the node 1421 by a gate
contact 1539.
FIG. 16A shows a generalized multiplexer circuit in which the
cross-coupled transistors (401, 403, 405, 407) are connected to
form two transmission gates 1602, 1604 to the common node 495, in
accordance with one embodiment of the present invention. As
previously discussed, gates of the first PMOS transistor 401 and
first NMOS transistor 407 are electrically connected, as shown by
electrical connection 491. Also, gates of the second PMOS
transistor 403 and second NMOS transistor 405 are electrically
connected, as shown by electrical connection 493. The first PMOS
transistor 401 and second NMOS transistor 405 are connected to form
a first transmission gate 1602 to the common node 495. The second
PMOS transistor 403 and first NMOS transistor 407 are connected to
form a second transmission gate 1604 to the common node 495.
Driving logic 1601 is electrically connected to both the first PMOS
transistor 401 and second NMOS transistor 405 at a terminal
opposite the common node 495. Driving logic 1603 is electrically
connected to both the second PMOS transistor 403 and first NMOS
transistor 407 at a terminal opposite the common node 495.
FIG. 16B shows an exemplary implementation of the multiplexer
circuit of FIG. 16A with a detailed view of the driving logic 1601
and 1603, in accordance with one embodiment of the present
invention. In the embodiment of FIG. 16B, the driving logic 1601 is
defined by an inverter 1601A and, the driving logic 1603 is defined
by an inverter 1603A. However, it should be understood that in
other embodiments, the driving logic 1601 and 1603 can be defined
by any logic function, such as a two input NOR gate, a two input
NAND gate, AND-OR logic, OR-AND logic, among others, by way of
example.
FIG. 16C shows a multi-level layout of the multiplexer circuit of
FIG. 16B implemented using a restricted gate level layout
architecture cross-coupled transistor layout, in accordance with
one embodiment of the present invention. The electrical connection
491 between the gate electrode 401A of the first PMOS transistor
401 and the gate electrode 407A of the first NMOS transistor 407 is
formed by a multi-level connection that includes a gate contact
1619, a (two-dimensional) metal-1 structure 1621, and a gate
contact 1623. The electrical connection 493 between the gate
electrode 403A of the second PMOS transistor 403 and the gate
electrode 405A of the second NMOS transistor 405 is formed by a
multi-level connection that includes a gate contact 1605, a
(one-dimensional) metal-1 structure 1607, a via 1609, a
(one-dimensional) metal-2 structure 1611, a via 1613, a
(one-dimensional) metal-1 structure 1615, and a gate contact 1617.
The common node electrical connection 495 is formed by a
multi-level connection that includes a diffusion contact 1625, a
(one-dimensional) metal-1 structure 1627, a via 1629, a
(one-dimensional) metal-2 structure 1631, a via 1633, a
(one-dimensional) metal-1 structure 1635, and a diffusion contact
1637. Transistors which form the inverter 1601A are shown within
the region bounded by the dashed line 1601AL. Transistors which
form the inverter 1603A are shown within the region bounded by the
dashed line 1603AL.
FIG. 17A shows a generalized multiplexer circuit in which two
transistors (403, 407) of the four cross-coupled transistors are
connected to form a transmission gate 1702 to the common node 495,
in accordance with one embodiment of the present invention. As
previously discussed, gates of the first PMOS transistor 401 and
first NMOS transistor 407 are electrically connected, as shown by
electrical connection 491. Also, gates of the second PMOS
transistor 403 and second NMOS transistor 405 are electrically
connected, as shown by electrical connection 493. The second PMOS
transistor 403 and first NMOS transistor 407 are connected to form
the transmission gate 1702 to the common node 495. Driving logic
1701 is electrically connected to both the second PMOS transistor
403 and first NMOS transistor 407 at a terminal opposite the common
node 495. Pull up driving logic 1703 is electrically connected to
the first PMOS transistor 401 at a terminal opposite the common
node 495. Also, pull down driving logic 1705 is electrically
connected to the second NMOS transistor 405 at a terminal opposite
the common node 495.
FIG. 17B shows an exemplary implementation of the multiplexer
circuit of FIG. 17A with a detailed view of the driving logic 1701,
1703, and 1705, in accordance with one embodiment of the present
invention. The driving logic 1701 is defined by an inverter 1701A.
The pull up driving logic 1703 is defined by a PMOS transistor
1703A connected between VDD and the first PMOS transistor 401. The
pull down driving logic 1705 is defined by an NMOS transistor 1705A
connected between GND and the second NMOS transistor 405.
Respective gates of the PMOS transistor 1703A and NMOS transistor
1705A are connected together at the node 1707. It should be
understood that the implementations of driving logic 1701, 1703,
and 1705, as shown in FIG. 17B are exemplary. In other embodiments,
logic different than that shown in FIG. 17B can be used to
implement the driving logic 1701, 1703, and 1705.
FIG. 17C shows a multi-level layout of the multiplexer circuit of
FIG. 17B implemented using a restricted gate level layout
architecture cross-coupled transistor layout, in accordance with
one embodiment of the present invention. The electrical connection
491 between the gate electrode 401A of the first PMOS transistor
401 and the gate electrode 407A of the first NMOS transistor 407 is
formed by a multi-level connection that includes a gate contact
1723, a (two-dimensional) metal-1 structure 1725, and a gate
contact 1727. The electrical connection 493 between the gate
electrode 403A of the second PMOS transistor 403 and the gate
electrode 405A of the second NMOS transistor 405 is formed by a
multi-level connection that includes a gate contact 1709, a
(one-dimensional) metal-1 structure 1711, a via 1713, a
(one-dimensional) metal-2 structure 1715, a via 1717, a
(one-dimensional) metal-1 structure 1719, and a gate contact 1721.
The common node electrical connection 495 is formed by a
multi-level connection that includes a diffusion contact 1729, a
(one-dimensional) metal-1 structure 1731, a via 1733, a
(one-dimensional) metal-2 structure 1735, a via 1737, a
(one-dimensional) metal-1 structure 1739, and a diffusion contact
1741. Transistors which form the inverter 1701A are shown within
the region bounded by the dashed line 1701AL. Respective gates of
the PMOS transistor 1703A and NMOS transistor 1705A are connected
to the node 1707 by a gate contact 1743.
Example Latch Embodiments
FIG. 18A shows a generalized latch circuit implemented using the
cross-coupled transistor configuration, in accordance with one
embodiment of the present invention. The gates of the first PMOS
transistor 401 and first NMOS transistor 407 are electrically
connected, as shown by electrical connection 491. The gates of the
second PMOS transistor 403 and second NMOS transistor 405 are
electrically connected, as shown by electrical connection 493. Each
of the four cross-coupled transistors are electrically connected to
the common node 495. It should be understood that the common node
495 serves as a storage node in the latch circuit. Pull up driver
logic 1805 is electrically connected to the second PMOS transistor
403 at a terminal opposite the common node 495. Pull down driver
logic 1807 is electrically connected to the first NMOS transistor
407 at a terminal opposite the common node 495. Pull up feedback
logic 1809 is electrically connected to the first PMOS transistor
401 at a terminal opposite the common node 495. Pull down feedback
logic 1811 is electrically connected to the second NMOS transistor
405 at a terminal opposite the common node 495. Additionally, the
common node 495 is connected to an input of an inverter 1801. An
output of the inverter 1801 is electrically connected to a feedback
node 1803. It should be understood that in other embodiments the
inverter 1801 can be replaced by any logic function, such as a two
input NOR gate, a two input NAND gate, among others, or any complex
logic function.
FIG. 18B shows an exemplary implementation of the latch circuit of
FIG. 18A with a detailed view of the pull up driver logic 1805, the
pull down driver logic 1807, the pull up feedback logic 1809, and
the pull down feedback logic 1811, in accordance with one
embodiment of the present invention. The pull up driver logic 1805
is defined by a PMOS transistor 1805A connected between VDD and the
second PMOS transistor 403 opposite the common node 495. The pull
down driver logic 1807 is defined by an NMOS transistor 1807A
connected between GND and the first NMOS transistor 407 opposite
the common node 495. Respective gates of the PMOS transistor 1805A
and NMOS transistor 1807A are connected together at a node 1804.
The pull up feedback logic 1809 is defined by a PMOS transistor
1809A connected between VDD and the first PMOS transistor 401
opposite the common node 495. The pull down feedback logic 1811 is
defined by an NMOS transistor 1811A connected between GND and the
second NMOS transistor 405 opposite the common node 495. Respective
gates of the PMOS transistor 1809A and NMOS transistor 1811A are
connected together at the feedback node 1803. It should be
understood that the implementations of pull up driver logic 1805,
pull down driver logic 1807, pull up feedback logic 1809, and pull
down feedback logic 1811 as shown in FIG. 18B are exemplary. In
other embodiments, logic different than that shown in FIG. 18B can
be used to implement the pull up driver logic 1805, the pull down
driver logic 1807, the pull up feedback logic 1809, and the pull
down feedback logic 1811.
FIG. 18C shows a multi-level layout of the latch circuit of FIG.
18B implemented using a restricted gate level layout architecture
cross-coupled transistor layout, in accordance with one embodiment
of the present invention. The electrical connection 491 between the
gate electrode 401A of the first PMOS transistor 401 and the gate
electrode 407A of the first NMOS transistor 407 is formed by a
multi-level connection that includes a gate contact 1813, a
(one-dimensional) metal-1 structure 1815, a via 1817, a
(one-dimensional) metal-2 structure 1819, a via 1821, a
(one-dimensional) metal-1 structure 1823, and a gate contact 1825.
The electrical connection 493 between the gate electrode 403A of
the second PMOS transistor 403 and the gate electrode 405A of the
second NMOS transistor 405 is formed by a multi-level connection
that includes a gate contact 1827, a (two-dimensional) metal-1
structure 1829, and a gate contact 1831. The common node electrical
connection 495 is formed by a multi-level connection that includes
a diffusion contact 1833, a (one-dimensional) metal-1 structure
1835, a via 1837, a (one-dimensional) metal-2 structure 1839, a via
1841, a (two-dimensional) metal-1 structure 1843, and a diffusion
contact 1845. Transistors which form the inverter 1801 are shown
within the region bounded by the dashed line 1801L.
FIG. 19A shows the latch circuit of FIG. 18A in which the two
cross-coupled transistors 401 and 405 remain directly connected to
the output node 495, and in which the two cross-coupled transistors
403 and 407 are positioned outside the pull up driver logic 1805
and pull down driver logic 1807, respectively, relative to the
common node 495, in accordance with one embodiment of the present
invention. Pull up driver logic 1805 is electrically connected
between the second PMOS transistor 403 and the common node 495.
Pull down driver logic 1807 is electrically connected between the
first NMOS transistor 407 and the common node 495. With the
exception of repositioning the PMOS/NMOS transistors 403/407
outside of their pull up/down driver logic 1805/1807 relative to
the common node 495, the circuit of FIG. 19A is the same as the
circuit of FIG. 18A.
FIG. 19B shows an exemplary implementation of the latch circuit of
FIG. 19A with a detailed view of the pull up driver logic 1805,
pull down driver logic 1807, pull up feedback logic 1809, and pull
down feedback logic 1811, in accordance with one embodiment of the
present invention. As previously discussed with regard to FIG. 18B,
the pull up feedback logic 1809 is defined by the PMOS transistor
1809A connected between VDD and the first PMOS transistor 401
opposite the common node 495. Also, the pull down feedback logic
1811 is defined by NMOS transistor 1811A connected between GND and
the second NMOS transistor 405 opposite the common node 495.
Respective gates of the PMOS transistor 1809A and NMOS transistor
1811A are connected together at the feedback node 1803. The pull up
driver logic 1805 is defined by the PMOS transistor 1805A connected
between the second PMOS transistor 403 and the common node 495. The
pull down driver logic 1807 is defined by the NMOS transistor 1807A
connected between the first NMOS transistor 407 and the common node
495. Respective gates of the PMOS transistor 1805A and NMOS
transistor 1807A are connected together at the node 1804. It should
be understood that the implementations of pull up driver logic
1805, pull down driver logic 1807, pull up feedback logic 1809, and
pull down feedback logic 1811 as shown in FIG. 19B are exemplary.
In other embodiments, logic different than that shown in FIG. 19B
can be used to implement the pull up driver logic 1805, the pull
down driver logic 1807, the pull up feedback logic 1809, and the
pull down feedback logic 1811.
FIG. 19C shows a multi-level layout of the latch circuit of FIG.
19B implemented using a restricted gate level layout architecture
cross-coupled transistor layout, in accordance with one embodiment
of the present invention. The electrical connection 491 between the
gate electrode 401A of the first PMOS transistor 401 and the gate
electrode 407A of the first NMOS transistor 407 is formed by a
multi-level connection that includes a gate contact 1901, a
(one-dimensional) metal-1 structure 1903, a via 1905, a
(one-dimensional) metal-2 structure 1907, a via 1909, a
(one-dimensional) metal-1 structure 1911, and a gate contact 1913.
The electrical connection 493 between the gate electrode 403A of
the second PMOS transistor 403 and the gate electrode 405A of the
second NMOS transistor 405 is formed by a multi-level connection
that includes a gate contact 1915, a (two-dimensional) metal-1
structure 1917, and a gate contact 1919. The common node electrical
connection 495 is formed by a multi-level connection that includes
a diffusion contact 1921, a (one-dimensional) metal-1 structure
1923, a via 1925, a (one-dimensional) metal-2 structure 1927, a via
1929, a (two-dimensional) metal-1 structure 1931, and a diffusion
contact 1933. Transistors which form the inverter 1801 are shown
within the region bounded by the dashed line 1801L.
FIG. 20A shows the latch circuit of FIG. 18A in which the two
cross-coupled transistors 403 and 407 remain directly connected to
the output node 495, and in which the two cross-coupled transistors
401 and 405 are positioned outside the pull up feedback logic 1809
and pull down feedback logic 1811, respectively, relative to the
common node 495, in accordance with one embodiment of the present
invention. Pull up feedback logic 1809 is electrically connected
between the first PMOS transistor 401 and the common node 495. Pull
down feedback logic 1811 is electrically connected between the
second NMOS transistor 405 and the common node 495. With the
exception of repositioning the PMOS/NMOS transistors 401/405
outside of their pull up/down feedback logic 1809/1811 relative to
the common node 495, the circuit of FIG. 20A is the same as the
circuit of FIG. 18A.
FIG. 20B shows an exemplary implementation of the latch circuit of
FIG. 20A with a detailed view of the pull up driver logic 1805,
pull down driver logic 1807, pull up feedback logic 1809, and pull
down feedback logic 1811, in accordance with one embodiment of the
present invention. The pull up feedback logic 1809 is defined by
the PMOS transistor 1809A connected between the first PMOS
transistor 401 and the common node 495. Also, the pull down
feedback logic 1811 is defined by NMOS transistor 1811A connected
between the second NMOS transistor 405 and the common node 495.
Respective gates of the PMOS transistor 1809A and NMOS transistor
1811A are connected together at the feedback node 1803. The pull up
driver logic 1805 is defined by the PMOS transistor 1805A connected
between VDD and the second PMOS transistor 403. The pull down
driver logic 1807 is defined by the NMOS transistor 1807A connected
between GND and the first NMOS transistor 407. Respective gates of
the PMOS transistor 1805A and NMOS transistor 1807A are connected
together at the node 1804. It should be understood that the
implementations of pull up driver logic 1805, pull down driver
logic 1807, pull up feedback logic 1809, and pull down feedback
logic 1811 as shown in FIG. 20B are exemplary. In other
embodiments, logic different than that shown in FIG. 20B can be
used to implement the pull up driver logic 1805, the pull down
driver logic 1807, the pull up feedback logic 1809, and the pull
down feedback logic 1811.
FIG. 20C shows a multi-level layout of the latch circuit of FIG.
20B implemented using a restricted gate level layout architecture
cross-coupled transistor layout, in accordance with one embodiment
of the present invention. The electrical connection 491 between the
gate electrode 401A of the first PMOS transistor 401 and the gate
electrode 407A of the first NMOS transistor 407 is formed by a
multi-level connection that includes a gate contact 2001, a
(one-dimensional) metal-1 structure 2003, a via 2005, a
(one-dimensional) metal-2 structure 2007, a via 2009, a
(one-dimensional) metal-1 structure 2011, and a gate contact 2013.
The electrical connection 493 between the gate electrode 403A of
the second PMOS transistor 403 and the gate electrode 405A of the
second NMOS transistor 405 is formed by a multi-level connection
that includes a gate contact 2015, a (one-dimensional) metal-1
structure 2017, and a gate contact 2019. The common node electrical
connection 495 is formed by a multi-level connection that includes
a diffusion contact 2021, a (two-dimensional) metal-1 structure
2023, and a diffusion contact 2025. Transistors which form the
inverter 1801 are shown within the region bounded by the dashed
line 1801L.
FIG. 21A shows a generalized latch circuit in which the
cross-coupled transistors (401, 403, 405, 407) are connected to
form two transmission gates 2103, 2105 to the common node 495, in
accordance with one embodiment of the present invention. As
previously discussed, gates of the first PMOS transistor 401 and
first NMOS transistor 407 are electrically connected, as shown by
electrical connection 491. Also, gates of the second PMOS
transistor 403 and second NMOS transistor 405 are electrically
connected, as shown by electrical connection 493. The first PMOS
transistor 401 and second NMOS transistor 405 are connected to form
a first transmission gate 2103 to the common node 495. The second
PMOS transistor 403 and first NMOS transistor 407 are connected to
form a second transmission gate 2105 to the common node 495.
Feedback logic 2109 is electrically connected to both the first
PMOS transistor 401 and second NMOS transistor 405 at a terminal
opposite the common node 495. Driving logic 2107 is electrically
connected to both the second PMOS transistor 403 and first NMOS
transistor 407 at a terminal opposite the common node 495.
Additionally, the common node 495 is connected to the input of the
inverter 1801. The output of the inverter 1801 is electrically
connected to a feedback node 2101. It should be understood that in
other embodiments the inverter 1801 can be replaced by any logic
function, such as a two input NOR gate, a two input NAND gate,
among others, or any complex logic function.
FIG. 21B shows an exemplary implementation of the latch circuit of
FIG. 21A with a detailed view of the driving logic 2107 and
feedback logic 2109, in accordance with one embodiment of the
present invention. The driving logic 2107 is defined by an inverter
2107A. Similarly, the feedback logic 2109 is defined by an inverter
2109A. It should be understood that in other embodiments, the
driving logic 2107 and/or 2109 can be defined by logic other than
an inverter.
FIG. 21C shows a multi-level layout of the latch circuit of FIG.
21B implemented using a restricted gate level layout architecture
cross-coupled transistor layout, in accordance with one embodiment
of the present invention. The electrical connection 491 between the
gate electrode 401A of the first PMOS transistor 401 and the gate
electrode 407A of the first NMOS transistor 407 is formed by a
multi-level connection that includes a gate contact 2111, a
(one-dimensional) metal-1 structure 2113, a via 2115, a
(one-dimensional) metal-2 structure 2117, a via 2119, a
(one-dimensional) metal-1 structure 2121, and a gate contact 2123.
The electrical connection 493 between the gate electrode 403A of
the second PMOS transistor 403 and the gate electrode 405A of the
second NMOS transistor 405 is formed by a multi-level connection
that includes a gate contact 2125, a (two-dimensional) metal-1
structure 2127, and a gate contact 2129. The common node electrical
connection 495 is formed by a multi-level connection that includes
a diffusion contact 2131, a (one-dimensional) metal-1 structure
2133, a via 2135, a (one-dimensional) metal-2 structure 2137, a via
2139, a (two-dimensional) metal-1 structure 2141, and a diffusion
contact 2143. Transistors which form the inverter 2107A are shown
within the region bounded by the dashed line 2107AL. Transistors
which form the inverter 2109A are shown within the region bounded
by the dashed line 2109AL. Transistors which form the inverter 1801
are shown within the region bounded by the dashed line 1801L.
FIG. 22A shows a generalized latch circuit in which two transistors
(403, 407) of the four cross-coupled transistors are connected to
form a transmission gate 2105 to the common node 495, in accordance
with one embodiment of the present invention. As previously
discussed, gates of the first PMOS transistor 401 and first NMOS
transistor 407 are electrically connected, as shown by electrical
connection 491. Also, gates of the second PMOS transistor 403 and
second NMOS transistor 405 are electrically connected, as shown by
electrical connection 493. The second PMOS transistor 403 and first
NMOS transistor 407 are connected to form the transmission gate
2105 to the common node 495. Driving logic 2201 is electrically
connected to both the second PMOS transistor 403 and first NMOS
transistor 407 at a terminal opposite the common node 495. Pull up
feedback logic 2203 is electrically connected to the first PMOS
transistor 401 at a terminal opposite the common node 495. Also,
pull down feedback logic 2205 is electrically connected to the
second NMOS transistor 405 at a terminal opposite the common node
495.
FIG. 22B shows an exemplary implementation of the latch circuit of
FIG. 22A with a detailed view of the driving logic 2201, the pull
up feedback logic 2203, and the pull down feedback logic 2205, in
accordance with one embodiment of the present invention. The
driving logic 2201 is defined by an inverter 2201A. The pull up
feedback logic 2203 is defined by a PMOS transistor 2203A connected
between VDD and the first PMOS transistor 401. The pull down
feedback logic 2205 is defined by an NMOS transistor 2205A
connected between GND and the second NMOS transistor 405.
Respective gates of the PMOS transistor 2203A and NMOS transistor
2205A are connected together at the feedback node 2101. It should
be understood that in other embodiments, the driving logic 2201 can
be defined by logic other than an inverter. Also, it should be
understood that in other embodiments, the pull up feedback logic
2203 and/or pull down feedback logic 2205 can be defined logic
different than what is shown in FIG. 22B.
FIG. 22C shows a multi-level layout of the latch circuit of FIG.
22B implemented using a restricted gate level layout architecture
cross-coupled transistor layout, in accordance with one embodiment
of the present invention. The electrical connection 491 between the
gate electrode 401A of the first PMOS transistor 401 and the gate
electrode 407A of the first NMOS transistor 407 is formed by a
multi-level connection that includes a gate contact 2207, a
(one-dimensional) metal-1 structure 2209, a via 2211, a
(one-dimensional) metal-2 structure 2213, a via 2215, a
(one-dimensional) metal-1 structure 2217, and a gate contact 2219.
The electrical connection 493 between the gate electrode 403A of
the second PMOS transistor 403 and the gate electrode 405A of the
second NMOS transistor 405 is formed by a multi-level connection
that includes a gate contact 2221, a (two-dimensional) metal-1
structure 2223, and a gate contact 2225. The common node electrical
connection 495 is formed by a multi-level connection that includes
a diffusion contact 2227, a (one-dimensional) metal-1 structure
2229, a via 2231, a (one-dimensional) metal-2 structure 2233, a via
2235, a (two-dimensional) metal-1 structure 2237, and a diffusion
contact 2239. Transistors which form the inverter 2201A are shown
within the region bounded by the dashed line 2201AL. Transistors
which form the inverter 1801 are shown within the region bounded by
the dashed line 1801L.
Exemplary Embodiments
In one embodiment, a cross-coupled transistor configuration is
defined within a semiconductor chip. This embodiment is illustrated
in part with regard to FIG. 2. In this embodiment, a first P
channel transistor (401) is defined to include a first gate
electrode (401A) defined in a gate level of the chip. Also, a first
N channel transistor (407) is defined to include a second gate
electrode (407A) defined in the gate level of the chip. The second
gate electrode (407A) of the first N channel transistor (407) is
electrically connected to the first gate electrode (401A) of the
first P channel transistor (401). Further, a second P channel
transistor (403) is defined to include a third gate electrode
(403A) defined in the gate level of a chip. Also, a second N
channel transistor (405) is defined to include a fourth gate
electrode (405A) defined in the gate level of the chip. The fourth
gate electrode (405A) of the second N channel transistor (405) is
electrically connected to the third gate electrode (403A) of the
second P channel transistor (403). Additionally, each of the first
P channel transistor (401), first N channel transistor (407),
second P channel transistor (403), and second N channel transistor
(405) has a respective diffusion terminal electrically connected to
a common node (495).
It should be understood that in some embodiments, one or more of
the first P channel transistor (401), the first N channel
transistor (407), the second P channel transistor (403), and the
second N channel transistor (405) can be respectively implemented
by a number of transistors electrically connected in parallel. In
this instance, the transistors that are electrically connected in
parallel can be considered as one device corresponding to either of
the first P channel transistor (401), the first N channel
transistor (407), the second P channel transistor (403), and the
second N channel transistor (405). It should be understood that
electrical connection of multiple transistors in parallel to form a
given transistor of the cross-coupled transistor configuration can
be utilized to achieve a desired drive strength for the given
transistor.
In one embodiment, each of the first (401A), second (407A), third
(403A), and fourth (405A) gate electrodes is defined to extend
along any of a number of gate electrode tracks, such as described
with regard to FIG. 3. The number of gate electrode tracks extend
across the gate level of the chip in a parallel orientation with
respect to each other. Also, it should be understood that each of
the first (401A), second (407A), third (403A), and fourth (405A)
gate electrodes corresponds to a portion of a respective gate level
feature defined within a gate level feature layout channel. Each
gate level feature is defined within its gate level feature layout
channel without physically contacting another gate level feature
defined within an adjoining gate level feature layout channel. Each
gate level feature layout channel is associated with a given gate
electrode track and corresponds to a layout region that extends
along the given gate electrode track and perpendicularly outward in
each opposing direction from the given gate electrode track to a
closest of either an adjacent gate electrode track or a virtual
gate electrode track outside a layout boundary, such as described
with regard to FIG. 3B.
In various implementations of the above-described embodiment, such
as in the exemplary layouts of FIGS. 10, 11, 14C, 15C, 16C, 17C,
18C, 19C, 20C, 21C, 22C, the second gate electrode (407A) is
electrically connected to the first gate electrode (401A) through
at least one electrical conductor defined within any chip level
other than the gate level. And, the fourth gate electrode (405A) is
electrically connected to the third gate electrode (403A) through
at least one electrical conductor defined within any chip level
other than the gate level.
In various implementations of the above-described embodiment, such
as in the exemplary layout of FIG. 13, both the second gate
electrode (407A) and the first gate electrode (401A) are formed
from a single gate level feature that is defined within a same gate
level feature layout channel that extends along a single gate
electrode track over both a p type diffusion region and an n type
diffusion region. And, the fourth gate electrode (405A) is
electrically connected to the third gate electrode (403A) through
at least one electrical conductor defined within any chip level
other than the gate level.
In various implementations of the above-described embodiment, such
as in the exemplary layouts of FIG. 12, both the second gate
electrode (407A) and the first gate electrode (401A) are formed
from a first gate level feature that is defined within a first gate
level feature layout channel that extends along a first gate
electrode track over both a p type diffusion region and an n type
diffusion region. And, both the fourth gate electrode (405A) and
the third gate electrode (403A) are formed from a second gate level
feature that is defined within a second gate level feature layout
channel that extends along a second gate electrode track over both
a p type diffusion region and an n type diffusion region.
In one embodiment, the above-described gate electrode cross-coupled
transistor configuration is used to implement a multiplexer having
no transmission gates. This embodiment is illustrated in part with
regard to FIGS. 14-15. In this embodiment, a first configuration of
pull-up logic (1401) is electrically connected to the first P
channel transistor (401), a first configuration of pull-down logic
(1407) electrically connected to the first N channel transistor
(407), a second configuration of pull-up logic (1405) electrically
connected to the second P channel transistor (403), and a second
configuration of pull-down logic (1403) electrically connected to
the second N channel transistor (405).
In the particular embodiments of FIGS. 14B and 15B, the first
configuration of pull-up logic (1401) is defined by a third P
channel transistor (1401A), and the second configuration of
pull-down logic (1403) is defined by a third N channel transistor
(1403A). Respective gates of the third P channel transistor (1401A)
and third N channel transistor (1403A) are electrically connected
together so as to receive a substantially equivalent electrical
signal. Moreover, the first configuration of pull-down logic (1407)
is defined by a fourth N channel transistor (1407A), and the second
configuration of pull-up logic (1405) is defined by a fourth P
channel transistor (1405A). Respective gates of the fourth P
channel transistor (1405A) and fourth N channel transistor (1407A)
are electrically connected together so as to receive a
substantially equivalent electrical signal.
In one embodiment, the above-described gate electrode cross-coupled
transistor configuration is used to implement a multiplexer having
one transmission gate. This embodiment is illustrated in part with
regard to FIG. 17. In this embodiment, a first configuration of
pull-up logic (1703) is electrically connected to the first P
channel transistor (401), a first configuration of pull-down logic
(1705) electrically connected to the second N channel transistor
(405), and mux driving logic (1701) is electrically connected to
both the second P channel transistor (403) and the first N channel
transistor (407).
In the exemplary embodiment of FIG. 17B, the first configuration of
pull-up logic (1703) is defined by a third P channel transistor
(1703A), and the first configuration of pull-down logic (1705) is
defined by a third N channel transistor (1705A). Respective gates
of the third P channel transistor (1703A) and third N channel
transistor (1705A) are electrically connected together so as to
receive a substantially equivalent electrical signal. Also, the mux
driving logic (1701) is defined by an inverter (1701A).
In one embodiment, the above-described gate electrode cross-coupled
transistor configuration is used to implement a latch having no
transmission gates. This embodiment is illustrated in part with
regard to FIGS. 18-20. In this embodiment, pull-up driver logic
(1805) is electrically connected to the second P channel transistor
(403), pull-down driver logic (1807) is electrically connected to
the first N channel transistor (407), pull-up feedback logic (1809)
is electrically connected to the first P channel transistor (401),
and pull-down feedback logic (1811) is electrically connected to
the second N channel transistor (405). Also, the latch includes an
inverter (1801) having an input connected to the common node (495)
and an output connected to a feedback node (1803). Each of the
pull-up feedback logic (1809) and pull-down feedback logic (1811)
is connected to the feedback node (1803).
In the exemplary embodiments of FIGS. 18B, 19B, and 20B, the
pull-up driver logic (1805) is defined by a third P channel
transistor (1805A), and the pull-down driver logic (1807) is
defined by a third N channel transistor (1807A). Respective gates
of the third P channel transistor (1805A) and third N channel
transistor (1807A) are electrically connected together so as to
receive a substantially equivalent electrical signal. Additionally,
the pull-up feedback logic (1809) is defined by a fourth P channel
transistor (1809A), and the pull-down feedback logic (1811) is
defined by a fourth N channel transistor (1811A). Respective gates
of the fourth P channel transistor (1809A) and fourth N channel
transistor (1811A) are electrically connected together at the
feedback node (1803).
In one embodiment, the above-described gate electrode cross-coupled
transistor configuration is used to implement a latch having two
transmission gates. This embodiment is illustrated in part with
regard to FIG. 21. In this embodiment, driving logic (2107) is
electrically connected to both the second P channel transistor
(403) and the first N channel transistor (407). Also, feedback
logic (2109) is electrically connected to both the first P channel
transistor (401) and the second N channel transistor (405). The
latch further includes a first inverter (1801) having an input
connected to the common node (495) and an output connected to a
feedback node (2101). The feedback logic (2109) is electrically
connected to the feedback node (2101). In the exemplary embodiment
of FIG. 21B, the driving logic (2107) is defined by a second
inverter (2107A), and the feedback logic (2109) is defined by a
third inverter (2109A).
In one embodiment, the above-described gate electrode cross-coupled
transistor configuration is used to implement a latch having one
transmission gate. This embodiment is illustrated in part with
regard to FIG. 22. In this embodiment, driving logic (2201) is
electrically connected to both the second P channel transistor
(403) and the first N channel transistor (407). Also, pull up
feedback logic (2203) is electrically connected to the first P
channel transistor (401), and pull down feedback logic (2205)
electrically connected to the second N channel transistor (405).
The latch further includes a first inverter (1801) having an input
connected to the common node (495) and an output connected to a
feedback node (2101). Both the pull up feedback logic (2203) and
pull down feedback logic (2205) are electrically connected to the
feedback node (2101). In the exemplary embodiment of FIG. 22B, the
driving logic (2201) is defined by a second inverter (2201A). Also,
the pull up feedback logic (2203) is defined by a third P channel
transistor (2203A) electrically connected between the first P
channel transistor (401) and the feedback node (2101). The pull
down feedback logic (2205) is defined by a third N channel
transistor (2205A) electrically connected between the second N
channel transistor (405) and the feedback node (2101).
FIG. 26 is an illustration showing an exemplary cross-coupled
transistor layout, in accordance with one embodiment of the present
invention. The cross-couple layout includes four transistors
26-102, 26-104, 26-106, 26-108. Transistors 26-102, 26-106 are
defined over a first diffusion region 26-110. Transistors 26-108,
26-104 are defined over a second diffusion region 26-112. In one
embodiment, the first diffusion region 26-110 is defined such that
transistors 26-102 and 26-106 are NMOS transistors, and the second
diffusion region 26-112 is defined such that transistors 26-104 and
26-108 are PMOS transistors. In another embodiment, the first
diffusion region 26-110 is defined such that transistors 26-102 and
26-106 are PMOS transistors, and the second diffusion region 26-112
is defined such that transistors 26-104 and 26-108 are NMOS
transistors. Additionally, the separation distance 26-114 between
the first and second diffusion regions 26-110, 26-112 can vary
depending on the requirements of the layout and the area required
for connection of the cross-coupled transistors between the first
and second diffusion regions 26-110, 26-112.
The layout of FIG. 26 utilizes a linear gate level as described
above. Specifically, each of linear gate level features 26-116A
through 26-116F, regardless of function, is defined to extend
across the gate level in a common direction and to be devoid of a
substantial change in direction along its length. Linear gate level
features 26-116B, 26-116F, 26-116C, and 26-116E form the gate
electrodes of transistors 26-102, 26-104, 26-106, and 26-108,
respectively. The gate electrodes of transistors 26-106 and 26-108
are connected through gate contacts 26-118 and 26-120, and through
a higher interconnect level feature 26-101. In one embodiment, the
interconnect level feature 26-101 is a first interconnect level
feature, i.e., Metal-1 level feature. However, in other
embodiments, the interconnect level feature 26-101 can be a higher
interconnect level feature, such as a Metal-2 level feature, or
Metal-3 level feature.
In the illustrated embodiment, to facilitate fabrication (e.g.,
lithographic resolution) of the interconnect level feature 26-101,
edges of the interconnect level feature 26-101 are substantially
aligned with edges of neighboring interconnect level features
26-103, 26-105. However, it should be understood that other
embodiments may have interconnect level features placed without
regard to interconnect level feature alignment or an interconnect
level grid. Additionally, in the illustrated embodiment, to
facilitate fabrication (e.g., lithographic resolution), the gate
contacts 26-118 and 26-120 are substantially aligned with
neighboring contact features 26-122 and 26-124, respectively, such
that the gate contacts are placed according to a gate contact grid.
However, it should be understood that other embodiments may have
gate contacts placed without regard to gate contact alignment or
gate contact grid.
The gate electrode of transistor 26-102 is connected to the gate
electrode of transistor 26-104 through gate contact 26-126, through
interconnect level (e.g., Metal-1 level) feature 26-130, through
via 26-132, through higher interconnect level (e.g., Metal-2 level)
feature 26-134, through via 26-136, through interconnect level
(e.g., Metal-1 level) feature 26-138, and through gate contacts
26-128. Although the illustrated embodiment of FIG. 26 utilizes the
Metal-1 and Metal-2 levels to connect the gate electrodes of
transistors 26-102 and 26-104, it should be appreciated that in
various embodiment, essentially any combination of interconnect
levels can be used to make the connection between the gate
electrodes of transistors 26-102 and 26-104.
It should be appreciated that the cross-coupled transistor layout
of FIG. 26 is defined using four transistors (26-102, 26-104,
26-106, 26-108) and four gate contacts (26-126, 26-128, 26-118,
26-120). Also, the layout embodiment of FIG. 26 can be
characterized in that two of the four gate contacts are placed
between the NMOS and PMOS transistors of the cross-coupled
transistors, one of the four gate contacts is placed outside of the
NMOS transistors, and one of the four gate contacts is placed
outside of the PMOS transistors. The two gate contacts placed
between the NMOS and PMOS transistors are referred to as "inner
gate contacts." The two gate contacts placed outside of the NMOS
and PMOS transistors are referred to as "outer gate contacts."
In describing the cross-coupled layout embodiments illustrated in
the various Figures herein, including that of FIG. 26, the
direction in which the linear gate level features extend across the
layout is referred to as a "vertical direction." Correspondingly,
the direction that is perpendicular to the direction in which the
linear gate level features extend across the layout is referred to
as a "horizontal direction." With this in mind, in the
cross-coupled layout of FIG. 26, it can be seen that the
transistors 26-102 and 26-104 having the outer gate contacts 26-126
and 26-128, respectively, are connected by using two horizontal
interconnect level features 26-130 and 26-138, and by using one
vertical interconnect level feature 26-134. It should be understood
that the horizontal and vertical interconnect level features
26-130, 26-134, 26-138 used to connect the outer gate contacts
26-126, 26-128 can be placed essentially anywhere in the layout,
i.e., can be horizontally shifted in either direction away from the
cross-coupled transistors 26-102, 26-104, 26-106, 26-108, as
necessary to satisfy particular layout/routing requirements.
FIG. 27 is an illustration showing the cross-coupled transistor
layout of FIG. 26, with the rectangular-shaped interconnect level
feature 26-101 replaced by an S-shaped interconnect level feature
27-144, in accordance with one embodiment of the present invention.
As with the illustrated embodiment of FIG. 26, the S-shaped
interconnect level feature 27-144 can be defined as a first
interconnect level feature, i.e., as a Metal-1 level feature.
However, in other embodiments, the S-shaped interconnect level
feature 27-144 may be defined within an interconnect level other
than the Metal-1 level.
FIG. 28 is an illustration showing the cross-coupled transistor
layout of FIG. 27, with a linear gate level feature 28-146 used to
make the vertical portion of the connection between the outer
contacts 26-126 and 26-128, in accordance with one embodiment of
the present invention. Thus, while the embodiment of FIG. 27 uses
vias 26-132 and 26-136, and the higher level interconnect feature
26-134 to make the vertical portion of the connection between the
outer contacts 26-126 and 26-128, the embodiment of FIG. 28 uses
gate contacts 28-148 and 28-150, and the linear gate level feature
28-146 to make the vertical portion of the connection between the
outer contacts 26-126 and 26-128. In the embodiment of FIG. 28, the
linear gate level feature 28-146 serves as a conductor, and is not
used to define a gate electrode of a transistor. It should be
understood that the linear gate level feature 28-146, used to
connect the outer gate contacts 26-126 and 26-128, can be placed
essentially anywhere in the layout, i.e., can be horizontally
shifted in either direction away from the cross-coupled transistors
26-102, 26-104, 26-106, 26-108, as necessary to satisfy particular
layout requirements.
FIG. 29 is an illustration showing a cross-coupled transistor
layout in which all four gate contacts 26-126, 26-128, 26-118, and
26-120 of the cross-coupled coupled transistors are placed
therebetween, in accordance with one embodiment of the present
invention. Specifically, the gate contacts 26-126, 26-128, 26-118,
and 26-120 of the cross-coupled coupled transistors are placed
vertically between the diffusion regions 26-110 and 26-112 that
define the cross-coupled coupled transistors. The gate electrode of
transistor 26-102 is connected to the gate electrode of transistor
26-104 through gate contact 26-126, through horizontal interconnect
level feature 29-172, through vertical interconnect level feature
29-174, through horizontal interconnect level feature 29-176, and
through gate contact 26-128. In one embodiment, the interconnect
level features 29-172, 29-174, and 29-176 are first interconnect
level features (Metal-1 features). However, in other embodiments,
the interconnect level features 29-172, 29-174, and 29-176 can be
defined collectively within any other interconnect level. The gate
electrode of transistor 26-108 is connected to the gate electrode
of transistor 26-106 through gate contact 26-120, through S-shaped
interconnect level feature 28-144, and through gate contact 26-118.
The S-shaped interconnect level feature 28-144 can be defined
within any interconnect level. In one embodiment, the S-shaped
interconnect level feature is defined within the first interconnect
level (Metal-1 level).
FIG. 30 is an illustration showing the cross-coupled transistor
layout of FIG. 29, with multiple interconnect levels used to
connect the gate contacts 26-126 and 26-128, in accordance with one
embodiment of the present invention. The gate electrode of
transistor 26-102 is connected to the gate electrode of transistor
26-104 through gate contact 26-126, through horizontal interconnect
level feature 29-172, through via 30-180, through vertical
interconnect level feature 30-178, through via 30-182, through
horizontal interconnect level feature 29-176, and through gate
contact 26-128. In one embodiment, the horizontal interconnect
level features 29-172 and 29-176 are defined within the same
interconnect level, e.g., Metal-1 level, and the vertical
interconnect level feature 30-178 is defined within a higher
interconnect level, e.g., Metal-2 level. It should be understood,
however, that in other embodiments each of interconnect level
features 29-172, 30-178, and 29-176 can be defined in separate
interconnect levels.
FIG. 31 is an illustration showing the cross-coupled transistor
layout of FIG. 29, with increased vertical separation between line
end spacings 31-184 and 31-186, in accordance with one embodiment
of the present invention. The increased vertical separation between
line end spacings 31-184 and 31-186 can facilitate creation of the
line end spacings 31-184 and 31-186 when formed using separate cut
shapes in a cut mask.
FIG. 32 is an illustration showing the cross-coupled transistor
layout of FIG. 29, using an L-shaped interconnect level feature
32-188 to connect the gate contacts 26-120 and 26-118, in
accordance with one embodiment of the present invention.
FIG. 33 is an illustration showing the cross-coupled transistor
layout of FIG. 32, with the horizontal position of gate contacts
26-126 and 26-118 reversed, and with the horizontal position of
gate contacts 26-120 and 26-128 reversed, in accordance with one
embodiment of the present invention.
It should be understood that the cross-coupled transistor layouts
implemented within the restricted gate level layout architecture as
disclosed herein can be stored in a tangible form, such as in a
digital format on a computer readable medium. Also, the invention
described herein can be embodied as computer readable code on a
computer readable medium. The computer readable medium is any data
storage device that can store data which can thereafter be read by
a computer system. Examples of the computer readable medium include
hard drives, network attached storage NAS), read-only memory,
random-access memory, CD-ROMs, CD-Rs, CD-RWs, magnetic tapes, and
other optical and non-optical data storage devices. The computer
readable medium can also be distributed over a network of coupled
computer systems so that the computer readable code is stored and
executed in a distributed fashion.
Any of the operations described herein that form part of the
invention are useful machine operations. The invention also relates
to a device or an apparatus for performing these operations. The
apparatus may be specially constructed for the required purpose,
such as a special purpose computer. When defined as a special
purpose computer, the computer can also perform other processing,
program execution or routines that are not part of the special
purpose, while still being capable of operating for the special
purpose. Alternatively, the operations may be processed by a
general purpose computer selectively activated or configured by one
or more computer programs stored in the computer memory, cache, or
obtained over a network. When data is obtained over a network the
data maybe processed by other computers on the network, e.g., a
cloud of computing resources.
The embodiments of the present invention can also be defined as a
machine that transforms data from one state to another state. The
data may represent an article, that can be represented as an
electronic signal and electronically manipulate data. The
transformed data can, in some cases, be visually depicted on a
display, representing the physical object that results from the
transformation of data. The transformed data can be saved to
storage generally, or in particular formats that enable the
construction or depiction of a physical and tangible object. In
some embodiments, the manipulation can be performed by a processor.
In such an example, the processor thus transforms the data from one
thing to another. Still further, the methods can be processed by
one or more machines or processors that can be connected over a
network. Each machine can transform data from one state or thing to
another, and can also process data, save data to storage, transmit
data over a network, display the result, or communicate the result
to another machine.
While this invention has been described in terms of several
embodiments, it will be appreciated that those skilled in the art
upon reading the preceding specifications and studying the drawings
will realize various alterations, additions, permutations and
equivalents thereof. Therefore, it is intended that the present
invention includes all such alterations, additions, permutations,
and equivalents as fall within the true spirit and scope of the
invention.
* * * * *
References