U.S. patent number 7,714,659 [Application Number 12/180,246] was granted by the patent office on 2010-05-11 for bias circuit with a feedback path and a method for providing a biasing signal.
This patent grant is currently assigned to Infineon Technologies AG. Invention is credited to Thomas Leitner.
United States Patent |
7,714,659 |
Leitner |
May 11, 2010 |
Bias circuit with a feedback path and a method for providing a
biasing signal
Abstract
Embodiments of the invention show a bias circuit for providing a
biasing signal at a bias connection. The bias circuit includes a
bias transistor and a feedback node, wherein the feedback node is
coupled to a control terminal of the bias transistor via a first
impedance element. The feedback node is furthermore coupled to the
bias connection via a second impedance element. The control
terminal of the bias transistor is coupled to the bias connection
via a bypass-coupling path, which bypasses the first impedance
element and the second impedance element, such that there is a
feedback path via the bypass-coupling path and via the bias
transistor from the bias connection to the feedback node.
Inventors: |
Leitner; Thomas (Pregarten,
AT) |
Assignee: |
Infineon Technologies AG
(Neubiberg, DE)
|
Family
ID: |
41568104 |
Appl.
No.: |
12/180,246 |
Filed: |
July 25, 2008 |
Prior Publication Data
|
|
|
|
Document
Identifier |
Publication Date |
|
US 20100019852 A1 |
Jan 28, 2010 |
|
Current U.S.
Class: |
330/296;
330/288 |
Current CPC
Class: |
H03F
3/195 (20130101); H03F 1/302 (20130101); H03F
2200/18 (20130101); H03F 2200/451 (20130101); H03F
2200/294 (20130101); H03F 2200/555 (20130101) |
Current International
Class: |
H03F
3/04 (20060101) |
Field of
Search: |
;330/285,288,296 |
References Cited
[Referenced By]
U.S. Patent Documents
Other References
Taniguchi, E., et al., "Dual Bias Feed SiGe HBT Low Noise Linear
Amplifier," IEEE 2001 Radio Frequency Integrated Circuits
Symposium, Digest of Papers, May 20, 2001-May 22, 2001, 4 pages,
IEEE. cited by other .
Park, C., et al., "Dual mode Low Noise Amplifier for WCDMA
applications," 2004 Conference, Department of E.E.E., 4 pages,
Pohang University of Science and Technology (POSTECH), Pohang,
Korea. cited by other.
|
Primary Examiner: Nguyen; Khanh V
Attorney, Agent or Firm: Slater & Matsil, L.L.P.
Claims
What is claimed is:
1. A bias circuit for providing a biasing signal at a bias
connection, the bias circuit comprising: a bias transistor; and a
feedback node; wherein the feedback node is coupled to a control
terminal of the bias transistor via a first impedance element;
wherein the feedback node is coupled to the bias connection via a
second impedance element; and wherein the control terminal of the
bias transistor is coupled to the bias connection via a
bypass-coupling path, bypassing the first impedance element and the
second impedance element, such that there is a feedback path, via
the bypass-coupling path and via the bias transistor, from the bias
connection to the feedback node.
2. The bias circuit according to claim 1, wherein the
bypass-coupling path comprises a feedback impedance element, and
wherein the bypass-coupling path is configured such that a coupling
via the feedback path is stronger for a low frequency signal than
for a high frequency signal.
3. The bias circuit according to claim 1, wherein the feedback path
is configured such that an input impedance of the bias circuit,
viewed from the bias connection, is at least by a factor of two
higher at a desired frequency-of-operation range than in a
frequency range lower than the desired frequency-of-operation
range.
4. The bias circuit according to claim 3, wherein the bias circuit
is configured such that the input impedance differs from an
impedance value of the second impedance element by less than 30% at
the desired frequency-of-operation range, and such that the input
impedance is at least 50% lower than the impedance value of the
second impedance element, at a frequency range lower than the
desired frequency-of-operation range.
5. The bias circuit according to claim 1, wherein the
bypass-coupling path comprises a feedback impedance element and
wherein the impedance value of the feedback impedance element
coupled between the bias connection and a control terminal of the
bias transistor is at least two times higher than the impedance
value of the second impedance element.
6. The bias circuit according to claim 1, wherein an impedance
value of the first impedance element is at least 1.5 times higher
than an impedance value of the second impedance element.
7. The bias circuit according to claim 1, wherein the control
terminal of the bias transistor is coupled to the bias connection
via the bypass-coupling path, such that, for a given frequency
below a desired frequency-of-operation range a voltage signal at
the feedback node, which is caused by a voltage signal at the bias
connection, is opposite in phase to the voltage signal at the bias
connection.
8. The bias circuit according to claim 1, wherein the bias circuit
comprises a support transistor; wherein the feedback node is
connected to a terminal of a controllable conductive path of the
support transistor; wherein a control terminal of the support
transistor is connected with a terminal of a controllable
conductive path of the bias transistor; and wherein the support
transistor is configured to contribute to a coupling between the
bias connection and the feedback node.
9. The bias circuit according to claim 1, wherein the bias
connection is coupled to an input of an amplifying unit, to provide
the bias signal to the amplifying unit, in order to bias the
amplifying unit; and wherein the amplifying unit is configured to
provide an amplified output signal based on an input signal.
10. The bias circuit according to claim 1, wherein the bias circuit
comprises a capacitive element coupled in parallel to a
controllable conductive path of the bias transistor, to obtain a
low pass characteristic of the feedback path in order to set a
boundary frequency for reducing the input impedance of the bias
circuit below a desired frequency-of operation range.
11. The bias circuit according to claim 1, wherein the feedback
path of the bias circuit comprises a low pass filter, configured to
determine a boundary frequency for reducing the input impedance of
the bias circuit below a desired frequency-of-operation range.
12. The bias circuit according to claim 1, wherein the bias circuit
is configured to provide, in a frequency dependent way, a reduction
of an effective impedance of the second impedance element, when
compared to an actual impedance of the second impedance
element.
13. The bias circuit according to claim 1, wherein the bias circuit
is configured to provide, in a frequency selective way, a negative
feedback signal to the feedback node in response to a signal at the
bias connection, to reduce an effective impedance of the second
impedance element for a given frequency range.
14. The bias circuit according to claim 1, wherein the bias circuit
is configured to regulate a potential at the feedback node in
dependence on a current provided by a current source, such that at
least 90% of the current provided by a current source flow through
the controllable conductive path of the bias transistor.
15. The bias circuit according to claim 1, wherein the bias circuit
is configured to form in combination with a transistor coupled to
the bias connection, a current mirror.
16. A bias circuit for providing a bias signal at a bias
connection, the bias circuit comprising: a bias potential
regulation loop comprising a current mirror transistor and an
impedance element, wherein the bias potential regulation loop is
configured to regulate a potential at a feedback node in response
to a reference current, and wherein the feedback node is coupled to
a control terminal of the current mirror transistor via the
impedance element; and a bypass-coupling path, extending from the
bias connection to the control terminal of the current mirror
transistor, bypassing the impedance element and the feedback node;
and wherein the bias signal is dependent on the potential at the
feedback node.
17. The bias circuit according to claim 16, wherein the bias
circuit is configured such that there is a coupling between the
bias connection and the feedback node via the bypass-coupling path
and via the current mirror transistor, and wherein the coupling
between the bias connection and the feedback node is such that a
voltage increase at the bias connection effects a voltage decrease
at the feedback node; and wherein the bias potential regulation
loop is configured to reduce an input impedance of the bias
circuit, viewed from the bias connection, with a frequency lower
than a desired frequency-of-operation range significantly more than
for an input signal with a frequency in the desired
frequency-of-operation range.
18. An amplifier comprising: an amplifying unit comprising an input
to receive a signal to be amplified and a biasing signal, and an
output to provide an output signal of the amplifying unit, based on
the signal to be amplified; and a bias circuit for providing the
biasing signal at the input of the amplifying unit; wherein the
bias circuit comprises a bias transistor and a feedback node;
wherein the feedback node is coupled to a control terminal of the
bias transistor via a first impedance element; wherein the feedback
node is coupled to the input of the amplifying unit via a second
impedance element; wherein the control terminal of the bias
transistor is coupled to the input of the amplifying unit via a
bypass-coupling path, bypassing the first impedance element and the
second impedance element, such that there is a feedback path via
the bypass-coupling path and via the bias transistor, from the
input of the amplifying unit to the feedback node, and wherein the
bypass-coupling path comprises a feedback impedance element.
19. The amplifier according to claim 18, wherein the bias circuit
comprises a support transistor, wherein the feedback node is
connected to a terminal of a controllable conductive path of the
support transistor, wherein a control terminal of the support
transistor is connected with a terminal of a controllable
conductive path of the bias transistor; and wherein the support
transistor is configured to contribute to a coupling between the
bias connection and the feedback node.
20. The amplifier according to claim 18, wherein the amplifying
unit comprises an amplifier transistor, wherein the input of the
amplifying unit is formed by a control terminal of the amplifier
transistor; and wherein the control terminal of the amplifier
transistor is coupled to the bias transistor, such that the bias
transistor and the amplifier transistor form a current mirror.
21. The amplifier according to claim 18, wherein the bias circuit
is configured to bias the amplifier transistor, such that an
operation point of the amplifier transistor is given; and wherein
the bias circuit is configured to stabilize the operating point of
the amplifier transistor by a feedback in the feedback path of the
bias circuit.
22. The amplifier according to claim 21, wherein the bias circuit
is configured to reduce a DC bias impedance of the bias circuit
viewed from the bias connection by the feedback in the feedback
path of the bias circuit, so that a compression point of the
amplifier transistor is increased.
23. The amplifier according to claim 20, wherein the bias circuit
is configured to stabilize a voltage between the control terminal
of the amplifier transistor and a terminal of the controllable
conductive path of the amplifier transistor using the
bypass-coupling path.
24. An amplifier for providing an output signal based on an input
signal, the amplifier comprising: an amplifier transistor, wherein
the control terminal of the amplifier transistor is coupled to a
signal input for a signal to be amplified, wherein a first terminal
of a controllable conductive path of the amplifier transistor is
coupled to a reference potential feed, wherein a second terminal of
the controllable conductive path of the amplifier transistor is
coupled, via an output circuit, to an output signal terminal for
the output signal; a bias circuit for providing a biasing signal at
the control terminal of the amplifier transistor, wherein the bias
circuit comprises a bias transistor and a feedback node; wherein
the feedback node is coupled to a control terminal of the bias
transistor via a first impedance element; wherein the feedback node
is coupled to the control terminal of the amplifier transistor via
a second impedance element; wherein the control terminal of the
bias transistor is coupled to the control terminal of the amplifier
transistor via a bypass-coupling path, bypassing the first
impedance element and the second impedance element, such that there
is a feedback path, via the bypass-coupling path and via the bias
transistor, from the control terminal of the amplifier transistor
to the feedback node; wherein a first terminal of the controllable
conductive path of the bias transistor is coupled to a control
terminal of a support transistor, and wherein a second terminal of
controllable conductive path of the bias transistor is connected to
the reference potential feed; wherein a capacitive element is
coupled in parallel between the first terminal and the second
terminal of the bias transistor; wherein a controllable conductive
path of the support transistor is coupled between the supply
potential feed and the feedback node; and wherein a current source
is connected to the supply potential feed and to a node via which
the control terminal of the support transistor and a first terminal
of the controllable conductive path of the bias transistor are
connected.
25. A method for providing a biasing signal at a bias connection of
a bias circuit, comprising a bias transistor, a feedback node, the
method comprising: coupling a feedback signal from the feedback
node of the bias circuit via a first impedance element to a control
terminal of the bias transistor; coupling the feedback signal from
the feedback node via a second impedance element to the bias
connection; and bypassing the first and the second impedance
element, by coupling the control terminal of the bias transistor to
the bias connection via a bypass-coupling path so that a bypass
feedback path is formed from the bias connection to the feedback
node.
Description
BACKGROUND
A bias circuit can be used for adjusting the operating point of an
amplifier. Such a bias circuit can be formed as a current mirror
circuit, for example, which biases the control terminal of an
amplifier transistor. For a low noise amplifier, for example, it is
desirable to reduce the noise from a bias circuit in order to
ensure a high-quality performance of the low noise amplifier (LNA)
with respect to important parameters or device parameters, e.g.,
the linearity of the amplifier, the compression point (P1dB) or the
intermodulation point (IP3). The linearity of an amplifier, the
compression point and the intermodulation point are determined
among others by the bias current of an amplifier transistor and the
way how the bias circuit, which delivers the bias current, is
implemented. Such low noise amplifiers can, for example, be used in
global positioning systems (GPS), wireless or mobile phone
applications and in automotive applications of the bias
circuit.
Conventionally, the noise of the bias circuit, for example, the
noise of a current mirror transistor of the bias circuit, is
blocked by a high-ohmic impedance.
SUMMARY OF THE INVENTION
Some embodiments according to the invention relate to a bias
circuit. Some embodiments relate to a bias circuit with a feedback
path for a low noise amplifier and to a method for providing a
biasing signal.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 shows a schematic diagram of a bias circuit with a feedback
path according to an embodiment of the invention;
FIG. 2 shows a schematic diagram of a bias circuit according to an
embodiment of the invention;
FIG. 3 shows a schematic diagram of a low noise amplifier
comprising a bias circuit with a feedback path according to another
embodiment of the invention;
FIG. 4 shows a diagram representation of the input impedance for
different bias circuitry in dependence of the frequency of an input
signal;
FIG. 5 shows a schematic diagram of an amplifier with a pair of
cascode transistors coupled to a bias circuit with a feedback path,
according to an embodiment of the invention;
FIG. 6 shows a table, which compares important amplifier parameters
of amplifiers with a modified bias circuit comprising a feedback
path according to an embodiment of the invention and with a bias
circuit without a feedback path;
FIG. 7 shows a graphical representation of measured curves on
amplifiers comprising the compression behavior and the current
consumption of modified bias circuit with feedback path and an
amplifier with a bias circuit without a feedback path;
FIGS. 8a to 8d show diagrams representing, the real part, the
imaginary part and the phase of the input impedance of the bias
circuit depending on varying resistance values for resistors used
in the bias circuit; and
FIG. 9 shows a flow chart of a method for providing a biasing
signal at a bias connection of a bias circuit according to an
embodiment of the invention.
DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS
With reference to FIGS. 1 to 9, embodiments are depicted, which
relate to a bias circuit with a feedback path for providing a
biasing signal at a bias connection, to an amplifier and to a
method for providing a biasing signal at a bias connection of a
bias circuit.
In FIG. 1, a schematic diagram of a bias circuit according to an
embodiment of the invention is shown. The bias circuit 10 for
providing a biasing signal at a bias connection 12 comprises a bias
transistor T1 and a feedback node 14. The feedback node 14 is
coupled to a control terminal 16a of the bias transistor T1 via a
first impedance element Rb1. In this embodiment, the feedback node
14 is furthermore coupled to the bias connection 12 via a second
impedance element Rb2. The control terminal 16a of the bias
transistor T1 is coupled to the bias connection 12 via a
bypass-coupling path 18, which bypasses the first impedance element
Rb1 and the second impedance element Rb2 such that there is a
feedback path, via the bypass-coupling path 18 and via the bias
transistor T1, from the bias connection 12 to the feedback node 14.
The bias circuit 10 may be connected to a reference potential feed
15 and to a supply potential feed 19. A current source 54 may
supply the required current for the bias circuit 10. The
bypass-coupling path 18 may comprise a feedback impedance element
Rf, which may, for example, be of the same type as the first
impedance element Rb1 and the second impedance element Rb2. For
example, the feedback impedance element Rf may be a resistor with a
certain resistance value.
The bias circuit shown in FIG. 1 comprises a bypass-coupling path
18 with a feedback impedance element Rf, so that a coupling via the
feedback path to the feedback node 14 is stronger for a low
frequency signal, which is applied at the bias connection 12 than
for a high frequency signal, which may be applied at the bias
connection 12. The feedback path may extend via the bypass-coupling
path 18, the bias transistor T1 and the connection 13, wherein the
connection 13 couples a terminal of the controllable conductive
path of the bias transistor T1 to the feedback node 14.
The input impedance of the bias circuit 10 viewed from the bias
connection 12 can be reduced compared to a bias circuit without the
bypassing coupling path 18, for a DC signal or a low frequency
signal, which may be coupled to the bias connection 12.
The input impedance of the bias circuit is reduced by the feedback
in the feedback path for low frequency signals applied at the bias
connection 12. A low frequency input signal coupled to the bias
connection 12 is coupled via the bypass-coupling path 18, which is
comprising the feedback impedance element Rf, to the control
terminal 16a of the bias transistor T1. As a consequence, a current
in the controllable path of the transistor T1 is increased in
response to a positive voltage change at the bias connection 12.
Consequently a potential at the feedback node 14 is decreased, so
that for low frequencies, the input impedance viewed from the bias
connection is reduced. For high frequency input signals, which may
be coupled to the bias connection 12, the (parasitic) capacitance
of the bias transistor T1, for example, the base collector
capacitance of the bias transistor T1, acts as a kind of low pass,
so that a potential at the feedback node 14 is almost unchanged by
the high frequency input signal. As a consequence, the input
impedance of the bias circuit for the high frequency signal is
approximately given by the second impedance element Rb2.
The bias transistor T1 can be a bipolar junction transistor (BJT),
for example. The bias transistor can be an npn-bipolar transistor
or a pnp-bipolar transistor, for example.
In some embodiments of the invention, the feedback path may
optionally be configured such that an input impedance of the bias
circuit 10, viewed from the bias connection, is at least by a
factor of two higher at a desired frequency-of-operation range than
in a frequency range lower than the desired frequency-of-operation
range.
The bias circuit 10 may optionally be configured such that the
input impedance of the bias circuit, viewed from the bias
connection 12, differs from an impedance value of the second
impedance element Rb2 by less than about 30% in the desired
frequency-of-operation range, and such that the input impedance is
at least about 50% lower than the impedance value of the second
impedance element for a frequency lower than the desired
frequency-of-operation range. The desired frequency-of-operation
may be given by the operating frequency range of an amplifier
biased by the bias circuit 10.
In some embodiments of the invention, the first impedance element
Rb1 and the second impedance element Rb2, as well as the feedback
impedance element Rf in the bypass-coupling path 18 may optionally
be formed as a resistor. The impedance value of the feedback
impedance element Rf may, for example, be at least twice the
impedance value of the second impedance element Rb2. The impedance
value of the first impedance element may, for example, be at least
about 1.5 times higher than the impedance value of the second
impedance element Rb2.
The feedback in the feedback path may, for example, result in a
reduction of the input impedance of the bias circuit for low
frequencies, wherein the high-impedance or high-resistance blocking
behavior in a desired frequency of operation range may be almost
not reduced. This reduction of the input impedance of the bias
circuit, viewed from the bias connection, results in an improved
compression behavior and an improved intermodulation behavior of an
amplifier, which may be biased by the bias circuit 10 according to
an embodiment of the invention.
The feedback path from bias connection 12 to the feedback node 14
can be formed, such that the control terminal 16a of the bias
transistor T1 is coupled to the bias connection 12 via the
bypass-coupling path 18. For a given frequency below a desired
frequency-of-operation range, a voltage signal at the feedback node
14, which is caused by a voltage signal at the bias connection 12,
may be opposite in phase to the voltage signal at the bias
connection 12. In other words, the feedback in the feedback path
can be a negative feedback for a given frequency below the desired
frequency-of-operation range of the bias circuit.
The bias circuit may, in a frequency selective way, be configured
to provide a negative feedback signal to the feedback node 14 in
response to a signal at the bias connection 12 in order to reduce,
for a given frequency range, an effective impedance of the second
impedance element. In order to achieve such a frequency selective
negative feedback, the bias circuit 10 may comprise a low pass
element, which can, for example, be formed by the bias transistor
T1 and the inherent base-collector capacitance. It is also,
optionally possible that the bias circuit comprises a capacitive
element, coupled in parallel to the controllable conductive path of
the bias transistor T1, to obtain a low pass characteristic of the
feedback path. Depending on the capacitance value of the capacitive
element, such a low pass characteristic of the feedback path can be
tuned, so that the input impedance of the bias circuit can be
reduced in a frequency range below the desired
frequency-of-operation range.
The feedback path of the bias circuit may also comprise a low pass
filter configured to determine a boundary frequency or a cut-off
frequency for reducing the input impedance of the bias circuit for
frequencies below a desired operating frequency range.
In FIG. 2, another embodiment of the invention is depicted. In this
embodiment, the bias circuit 10 provides a biasing signal at a bias
connection 12. The bias circuit 10 comprises a bias transistor T1
and a feedback node 14. Furthermore, the bias circuit comprises a
first impedance element Rb1 and a second impedance element Rb2,
wherein the feedback node 14 is coupled, via the first impedance
element Rb1, to a control terminal 16a of the bias transistor T1
and, via the second impedance element Rb2, to the bias connection
12. The control terminal 16a of the bias transistor is furthermore
coupled to the bias connection 12 via a bypass-coupling path 18,
wherein the bypass-coupling path comprises a feedback impedance
element Rf. The bypass-coupling path bypasses the first impedance
element Rb1 and the second impedance element Rb2, such that there
is a feedback path via the bypass-coupling path 18 and via the bias
transistor T1 from the bias connection 12 to the feedback node 14.
In this embodiment, the bias circuit comprises a support transistor
T3, for example, a bipolar transistor. The controllable conductive
path of the support transistor T3 is connected to the feedback node
14, and the control terminal 30a of the support transistor T3 is
connected to a terminal of the controllable conductive path of the
bias transistor T1. The support transistor T3 is configured to
contribute to a coupling between the bias connection 12 and the
feedback node 14. As it is shown in FIG. 2, a constant current
source 54 may be connected, via a node 33, to the control terminal
of the support transistor T3 and to a terminal of the controllable
conductive path of the bias transistor T1, for example to a
collector terminal 16b of the transistor T1. The second terminal
16c of the controllable conductive path of the bias transistor T1,
for example, the emitter-terminal is coupled to a reference
potential feed 15. The reference potential feed 15 may be a ground
potential. The current source 54 and the second terminal of the
controllable conductive path of the support transistor T3, for
example, the collector-terminal of the support transistor T3, may
be coupled to a supply potential feed 19.
The support transistor T3 can be configured to contribute to a
coupling between the bias connection and the feedback node. That
means, for example, that the input impedance of the bias circuit,
viewed from the bias connection 12, can be strongly reduced for a
given frequency below the desired frequency-of-operation range by
the operation of the support transistor T3. The support transistor
T3 may act as an emitter-follower to provide a low impedance at the
feedback node 14.
In FIG. 3, an amplifier 40 is shown, which is biased using a bias
circuit 10 according to another embodiment of the invention. The
amplifier 40 may be monolithically integrated on one chip. The
amplifier 40 may comprise an amplifier unit or gain unit 42, a
constant current source 54 Iconst and a bias circuit 10 for
providing a biasing signal at a bias connection 12. The amplifier
40 may be configured, for example, to amplify a high frequency (HF)
signal or radio frequency (RF) signal, which may be provided, for
example, by an antenna, or the like, at a high frequency input
terminal RFIN. The amplified high frequency signal can be forwarded
via a load matching circuit 33 to an output terminal RFOUT of the
amplifier. The amplifier unit 42 may comprise an amplifier
transistor T2, wherein a control terminal 44a, for example, a base
terminal of the amplifier transistor T2 is connected to the bias
connection 12 of the bias circuit 10. This means that the amplifier
transistor T2 is biased using the bias circuit 10. The bias circuit
10 may be formed as described in context to the description of
FIGS. 1 and 2. Accordingly the bias circuit may comprise a bias
transistor T1, a first impedance element Rb1 and a second impedance
element Rb2. A feedback node 14 of the bias circuit is coupled to
the bias connection 12 via a feedback path. The feedback path
extends via the support transistor T3, the bias transistor T1 and
the bypass-coupling path 18, which is comprising the feedback
impedance element Rf. Both the bias connection 12 and an input
terminal RFIN of the amplifier may be coupled to an input node of
the amplifying unit 42. The input node may be the control terminal
44a of the amplifier transistor T2. Thus, the bias circuit 10
provides a bias signal to the input node of the amplifying unit to
bias the amplifying unit. The bias signal is combined with an
amplifier input signal obtained from the input terminal RFIN. In
the above described configuration the amplifier input signal to be
amplified is fed to the bias connection.
According to an embodiment of the invention, an effective input
impedance of the amplifier for a signal to be amplified is
determined both by the input impedance of the bias circuit and by
the input impedance of the amplifying unit 42. The amplifying unit
42 is configured to provide an amplified output signal based on an
input signal applied to the RFIN input terminal. The signal, which
is applied to the input terminal RFIN, may be the signal to be
amplified. The signal to be amplified may comprise a frequency in a
desired frequency-of-operation range.
The bias circuit 10 may be configured to set a certain operating
point for the amplifier transistor T2. The bias circuit 10 may
furthermore be configured to stabilize the operating point of the
amplifier transistor. In some cases, the bias circuit 10 may cause
an improved compression behavior and an improved intermodulation
behavior compared to conventional low noise amplifiers, without
feedback path.
In the embodiment depicted in FIG. 3, a dependence of the
base-emitter voltage VBE2 of the amplifier transistor T2 from the
resistor Rb2 is reduced by means of the feedback in the feedback
path with the resistor Rf. A high-resistance blocking or
high-impedance blocking of high frequency input signals comprising
a desired frequency-of-operation is hardly reduced or not reduced
significantly.
The dependence of the base emitter-voltage VBE2 from the second
impedance element Rb2 can be described by the formula (1):
.beta..beta..times..times..beta..beta..times..times..times..times..DELTA.-
.times..times..times..times..times..times..times..times..times..times..DEL-
TA..times..times..times..times. ##EQU00001##
For this formula it is assumed that all transistors comprise the
same current amplification .beta. and the same saturation current
I.sub.S, in order to simplify the analysis. A change of the base
current of the transistor T2, because of an excursion is
represented in formula (1) with .DELTA.ib2. The currents ib2 and
ib1 represent the current flow through the respective resistors Rb1
and Rb2. The current of the current mirror circuit for the currents
ib1 and ib2 can be described by the relation ib1N2=ib2N1. The
relation of the resistors Rb1 and Rb2 satisfies the formula
Rb2N2=Rb1N1. V.sub.t corresponds to kT/q. For a desired operation
frequency, a certain input impedance of the low noise amplifier is
desired in order to block the noise of the transistor T1.
Therefore, a resistance value of the resistor Rb2 should not be
chosen as small as desired. As it can be seen from formula (1), the
dependence of the base emitter voltage VBE2 of the amplifier
transistor T2 from the resistor Rb2 can be reduced by means of the
feedback using the feedback impedance element Rf. As a consequence,
an improved compression behavior of the amplifier 40, e.g., the low
noise amplifier 40, can be achieved in some cases. In other words,
the bypass feedback path comprising the impedance element Rf may
comprise the effect to counteract a reduction of the base-emitter
voltage of the amplifier transistor T2 in the presence of a strong
radio frequency (RF) input signal at the terminal RFIN.
The VBE2 dependence from the resistor Rb2 for an amplifier without
the bypass-coupling path can be analytically described with the
following formula (2):
.beta..beta..times..times..beta..beta..times..times..times..times..DELTA.-
.times..times..times..times..times..times..times..times..DELTA..times..tim-
es..times..times. ##EQU00002##
Furthermore, the intermodulation behavior of the amplifier 40 may
be improved in some cases, as the following considerations will
reveal. For the intermodulation behavior a source impedance Zs, for
example, the input impedance (for example, at the input node) at a
frequency .+-.nf1.+-.mf2 may be important, wherein n and m are
between 1 . . . N and wherein f1 and f2 may be designated to two
frequencies of two signals. A first input signal of the amplifier
40 may comprise a frequency f1, which may be heterodyned by a
second signal with a frequency f2, so that distortions caused by an
intermodulation of the two signals may occur at the output of the
amplifier 40. This can occur, since the amplifier may comprise, at
a certain frequency, a non-linear characteristic. Therefore, mixed
products of the two frequencies may occur in the amplification
range of the amplifier. The intermodulation behavior of a certain
order depends on the integer numbers n and m. For the third order
intercept point (IP3), the source impedance Zs at a frequency
|f-f2| is an important criterion. The difference frequency |f1-f2|
is often about 1 MHz. In order to keep the source impedance at a
frequency |f1-f2| as low as possible, a low frequency sink may be
used in a matching network.
The input impedance for a bias circuit without the bypass-coupling
path can be described for low frequencies by the following formula
(3): Zin=Rb2 for f<< (3)
The bias circuit with the bypass-coupling path, which is depicted
in FIG. 3, comprises a frequency-dependent input impedance. For a
low frequency signal, the input impedance Zin can be approximately
described using the following formula (4):
.times..times..times..times..times..times..times..times..times..times.<-
;< ##EQU00003##
According to embodiments of the invention, the input impedance Zin
for low frequencies can be reduced compared to the input impedance
of the conventional bias circuit, which is described by the formula
(3), by the bypass-coupling path comprising the feedback impedance
element Rf.
FIG. 4 shows a diagram representing simulation results for the
input impedance of bias circuits. The diagram comprises four
curves, wherein curve 510 belongs to a bias circuit without
feedback path, wherein a curve 520 belongs to a modified bias
circuit with feedback path, wherein a curve 530 belongs to a bias
circuit without a feedback path and without an emitter follower
support transistor T3 and wherein curve 540 belongs to a modified
bias circuit without the emitter follower T3. On the logarithmic
abscissa the frequency in MHz is depicted. A magnitude of the input
impedance |Zin| of the bias circuit is assigned to the Y-axis. The
simulation results shown in FIG. 4 have been achieved with the
Infineon B7HFM technology. The resistance values of the first
impedance element Rb1, the second impedance element Rb2 and the
feedback impedance element Rf are: Rb1=42 k.OMEGA., Rb2=3 k.OMEGA.
and Rf=13 k.OMEGA. (curves 520, 540 only). The simulation clearly
reveals the above-described reduction of the input impedance of the
bias circuit with feedback, illustrated by the curves 540 and 520.
The reduction of the input impedance |Zin| for low frequencies
results in an improvement of the third order intercept point (IP3)
on the input side compared to the smaller reduction of the input
impedance by means of only the two resistors Rb1, Rb2 as in a bias
circuit without the feedback path. A similar result may be achieved
using a low frequency sink. The small reduction of the input
impedance for the modified bias circuit with the emitter follower
and for the modified bias circuit without the emitter follower, for
higher frequencies can optionally be counteracted or avoided by an
increase of the resistance values of the resistors Rb1 and Rb2. The
boundary frequency or the cut-off frequency for the reduction of
the input impedance caused by the feedback in the feedback path
depends, among others, on the base-collector capacitance of the
current mirror transistor T1 (see FIG. 3). By means of a capacitive
element, this boundary frequency or cut-off frequency can be
shifted to lower frequencies. That means that the bias circuit can
optionally comprise a capacitive element 75 (see FIG. 5) coupled in
parallel to the controllable conductive path of the bias transistor
T1 to obtain a low pass characteristic of the feedback path, such
that the boundary frequency for reducing the input impedance of the
bias circuit below a desired operating frequency is given. For
example, by forming a low pass element using a capacitive element,
which is coupled in parallel to the conductive controllable path of
the mirror transistor T1, a certain boundary frequency or cut-off
frequency can be achieved. If the boundary frequency is shifted to
the frequency range of |f1-f2|, the input impedance Zin(|f1-f2|)
increases and the achieved improvement in terms of the
intermodulation behavior may be reduced.
The frequency dependent behavior of the input impedance of the bias
circuit according to an embodiment of the invention can also be
observed if the support transistor T3, which contributes to the
amplification, for example, of the current mirror and of the
feedback path from the bias connection to the feedback node, is
missing in the bias circuit. However, the observed effect of an
input impedance reduction is, in this case, less than with the
support transistor T3, as can be seen in FIG. 4 (compare curve 540
and curve 520).
According to some embodiments of the invention, the bias circuit
with the bias transistor T1 can optionally be configured to form a
current mirror together with the amplifier transistor T2, which may
be connected to the bias connection.
In some embodiments the bias circuit with the feedback path may be
configured so that the input impedance differs from an impedance
value of the second impedance element by less than about 30% at a
desired frequency-of-operation range, and such that the input
impedance is at least about 50% lower than the impedance value of
the second impedance element, at a frequency range lower than the
desired frequency-of-operation range.
FIG. 5 shows a schematic diagram of an amplifier 40 with an
amplifier unit 42 and a bias circuit 10, according to another
embodiment of the invention. The amplifier 40 comprises an input
signal terminal RFIN and an output terminal RFOUT. In this
embodiment, the amplifying unit 42 comprises a pair of transistors
T2 and T4, which are coupled in a cascode configuration, wherein
the bias circuit 10 is configured to bias the control terminal of
the amplifier transistor T2. One terminal of the amplifier
transistor T2, for example, an emitter terminal of the amplifier
transistor T2, is coupled to the reference potential feed 15 via an
inductor 72. The amplifier transistor T2 is coupled, via the
cascode transistor T4 and an output stage 74, to the output
terminal RFOUT of the amplifier. The output stage 74 may be coupled
to the supply potential feed 19 and may be configured to provide an
output matching. The diode 77 in series with the resistor 76 may
also be coupled to the supply potential feed 19 and may be
configured to provide a bias signal for adjusting the operation
point of the transistor T4.
The bias circuit 10 may comprise a bias transistor T1, wherein the
control terminal 16a of the bias transistor is coupled, via a
bypass-coupling path 18 comprising a feedback impedance element Rf,
to the bias connection 12, which is connected to the control
terminal of the amplifier transistor T2. The RFIN input and the
bias connection are both coupled to the control terminal of the
amplifier transistor T2. Accordingly a portion of the RF input
signal from the RFIN connection of the amplifier may be coupled
into the bias circuit, while the rest of the RF input signal may be
coupled to the amplifier transistor T2. The capacitive element 75
may be connected in parallel to the two terminals of the
controllable conductive path of the bias transistor T1. The
amplifier 40 comprises a support transistor T3, which is coupled to
the bias transistor T1 and the feedback node 14 in order to amplify
the coupling or to contribute to the coupling from the bias
connection to the feedback node. The feedback node 14 is coupled to
the control terminal of the bias transistor via the first impedance
element Rb1 and is coupled to the bias connection 12 via the second
impedance element Rb2. In this embodiment the first impedance
element, the second impedance element and the feedback impedance
element are resistors. The amplifier 14 may further comprise a
constant current source 54. The constant current source can be
connected to the control terminal of the support transistor T3 and
to a controllable-conductive path terminal, for example, the
collector terminal, of the bias transistor T1. The bias circuit 10
may be configured to adjust or regulate the potential at the
feedback node, so that a dominant portion, for example, at least
about 90%, of the current delivered by the current source 54 flows
through the controllable conductive path of the bias transistor T1.
Thus, the potential at the feedback node is adjusted in response to
the current provided by the current source.
It should be noted here that the current source 54 may be replaced
by an adjustable current source in some embodiments, for example,
to adjust an amplification.
An effect of the modified bias circuit according to embodiments of
the invention is the fact that the impedance for the desired
frequency-of-operation range of the amplifier can be relatively
high, for example, larger than 1 k.OMEGA. or almost unchanged, when
compared to a bias circuit without feedback. The impedance for
lower frequencies, for example, for a frequency |f1-f2|, for
example, of the order of 1 MHz can be brought to a relatively low
value, for example, smaller than 1 k.OMEGA. or reduced, when
compared to a bias circuit without feedback. Therefore, the
intermodulation behavior, for example, the IP3, can be improved
without a significant worsening of the noise figure or the
S21-parameter of the amplifier. The compression behavior depends on
the DC-bias impedance. The smaller the DC-bias impedance, the less
it counteracts with the input impedance of the bias circuit and the
amplification of the low noise amplifier. Therefore, the
compression point is increased. If a high input level is applied at
the low noise amplifier transistor T2, the base current of the
amplifier transistor is increased. The bias circuit 10 can supply
this additional base current. As a consequence, an additional
voltage drop in dependence of the bias circuit impedance may occur,
such that the voltage between the base and the emitter VBE2 of the
amplifier transistor T2 depends on the bias impedance.
In this embodiment, the input of the amplifying unit 42 may be
formed by a control terminal of an amplifying transistor T2. The
control terminal of the amplifying transistor can be coupled to the
bias transistor T1, such that a current mirror is formed. The
current mirror may counteract a reduction of the voltage at the
control terminal of the amplifying transistor T2 using the
bypass-coupling path 18.
FIG. 6 shows a table of important performance parameters of the
amplifier 40 described with reference to FIG. 5 and of an amplifier
comparable to the amplifier 40 depicted in FIG. 5, but without the
feedback path. The table in FIG. 6 shows a comparison of the
collector current or ICC current in units of mA, the S21-forward
transmission parameter, the S11-input reflection parameter and the
S22-output reflection parameter in units of dB. Moreover the noise
figure (NF) in units of dB is shown, and the difference
(.DELTA.IIP3) of the third order intercept point between the bias
circuit without a feedback path and the bias circuit with a
feedback path in units of dBm and the difference (.DELTA.P1dB) of
the compression point between the bias circuit without a feedback
path and the bias circuit with a feedback path in units of dBm, are
shown. The measurements were taken for input signals with a
frequency of 2140 MHz coupled to the input terminal RFIN of the
amplifier. The desired frequency-of-operation for the input signal
applied to the amplifier is in this embodiment 2140 MHz. In some
embodiments the compression point P1dB and the third order
intermodulation point IIP3 are improved for the circuit with the
modified biasing scheme according to embodiments of the invention
compared to the bias circuit without the bypass-coupling path.
The compression point P1dB illustrates the value of an input
amplitude for which the amplitude of the output signal at a
fundamental frequency differs by about 1 dB from the idealized
linear extrapolation graph of the amplifier. In other words, the
P1dB compression point indicates for which input power the gain of
the amplifier for a desired signal drops by 1 dB. An ideal
amplifier comprises a linear behavior at its output. That means
that the output signal is ideally proportional to the input signal.
For high input levels, however, the constant of proportionality
decreases until the output signal level does not increase any more,
even for a further increase of an amplitude of the input signal.
The signal input level at which the output signal level differs
from an expected value by about 1 dB, compared to a linear
behavior, may give the 1 dB compression point (P1dB).
According to the embodiment in FIG. 6 the P1dB compression point
can be improved by 3.8 dBm, for an amplifier with a feedback path
compared to an amplifier without a bypass feedback path.
The third order intercept point IIP3 may, for example, be improved
by 5.7 dBm for the amplifier with the modified biasing scheme
caused by the feedback compared to an amplifier without bypass
feedback path.
A 10 dB distance between the IIP3 and P1dB may, for example, be
achieved if the BJT T2 is considered without an external wiring. In
the case of a negative feedback, e.g., an emitter degeneration, the
IIP3 may additionally depend on the intermodulation distance IM2.
Because of the negative feedback, the IM2 product is coupled to the
input of the LNA and heterodyned again with the input signal.
Therefore, the IM2 product contributes to the IM3 product. The IM3
products depend additionally on the IM2 products |f1-f2| and
|f1+f2|. These IM2 products can be reduced by choosing a source
impedance, e.g., an impedance at a control terminal of the
transistor T2, which is small compared to the impedance of the
amplifier transistor at a frequency of |f1-f2| and |f1+f2|. The
source impedance at a frequency of |f1-f2| could be reduced by
means of a matching network. As a consequence, a high capacitance
(caps) would be required, which would increase the switching time
of the amplifier. In addition the source impedance at a frequency
of |f1-f2|, for example, for a frequency below a
frequency-of-operation range can also be reduced by means of a bias
circuit according to embodiments of the invention. Thus, a low
switching time of the amplifier can be achieved in some embodiments
according to the invention.
An effect of the modified bias circuit according to some
embodiments of the invention is the fact that the impedance for a
desired frequency-of-operation range may be almost unchanged, for
example, by the bypass feedback path 18, and that the impedance for
lower frequencies, for example, with a frequency |f1-f2|, for
example, below the frequency-of-operation range may be reduced.
Therefore, the intermodulation behavior, for example, the IIP3, can
be improved without a worsening of the noise figure or the
S21-parameter of an amplifier connected to the bias circuit.
The compression behavior may depend on the DC-bias impedance. The
smaller the DC-bias impedance, the less it counteracts the input
impedance of the bias circuit and the amplification of the low
noise amplifier. Therefore, the compression point is increased. If
a high input level is applied, the base current of the amplifier
transistor, e.g., the low noise amplifier transistor T2 is
increased. The bias circuit 10 may supply this additional base
current. As a consequence, an additional voltage drop in dependence
on the bias impedance may occur, such that the voltage between the
base and the emitter VBE2 of the amplifier transistor T2 depends on
the bias impedance. The bypass feedback path may reduce such a
dependence of the bias point of the amplifier transistor T2.
The bias circuit may optionally comprise an additional inductor,
wherein the inductor may be coupled in series with the second
impedance element to the feedback node in order to suppress a high
frequency signal. Alternatively the inductor may be coupled in
series with the feedback impedance element to the bias connection
12 or it may be coupled in series with the parallel element, formed
by the second impedance element and the feedback impedance element,
to the bias connection. An inductive blocking for high frequencies
may be achieved by the inductor. The inductor may result in a
blocking of the noise of the bias transistor T1 at high
frequencies. For low frequency signals, mainly the resistors Rb1,
Rb2 and Rf are effective. In order to achieve a blocking comparable
to the described blocking using the feedback path, an inductive
coil would be necessary comprising a reactance higher than about 1
k.OMEGA. For that purpose an inductive coil would require an
inductance of about 100 nH at a frequency of about 2 GHz. This kind
of blocking is realized, for example, in the BGA615L7 amplifier. A
coil with an inductance of about 100 nH is normally not integrated
on a chip, since already a coil with an inductance of about 8 nH
consumes a 320.times.320 .mu.m area on a chip. Such high inductance
values may be realized with an external device. In contrast the
bias circuit with the feedback may be monolithically integrated on
a chip according to embodiments of the invention.
To summarize, the feedback path may eliminate the need to introduce
a blocking inductance into the bypass circuit. However, the bias
circuit may optionally be supplemented with a blocking impedance,
for example, a blocking inductance.
According to embodiments of the invention, it is possible that the
input impedance of the bias circuit for a desired
frequency-of-operation range may be almost unchanged, compared to a
bias circuit without feedback, and the input impedance for lower
frequencies reduced, without an increase of the complexity of the
bias circuit. The adjusting of the operating point of the current
mirror of the bias circuit may be performed in a conventional way
since the relation VBE1=VBE2 may be still valid, wherein the
voltage between the control terminal and the emitter of the
transistor T1 corresponds to VBE1.
FIG. 7 shows the ICC current, the compression behavior and the gain
of an amplifier having a bias circuit without a bypass feedback
path in comparison to an amplifier with a modified bias circuit,
which is comprising a feedback path. The input power in units of
dBm is shown on the X-axis. On the left Y-axis, the gain in dB is
depicted, and on the right Y-axis the ICC current in units of mA is
depicted. FIG. 7 illustrates the effect of the feedback in the
modified bias circuit on the compression behavior of the respective
(low noise) amplifier. The P1dB compression point is improved by
about 3.8 dBm (.DELTA.P1dB) for the bias circuit with a feedback
path compared to the bias circuit without feedback path. Moreover
the effect on the ICC current is illustrated. The ICC current may
be slightly increased for the amplifier with the modified bias
circuit.
FIGS. 8a to 8d show simulation results for bias circuitry with
different resistance values for the resistors Rb1 and Rb2 in
comparison to a bias circuit with a feedback path according to an
embodiment of the invention. The chosen resistance value for Rb1,
Rb2 and Rf are only considered as examples without any
limitation.
In FIG. 8a the real part of the input impedance of the bias
circuit--the resistance--is depicted. On the logarithmic abscissa
the frequency is shown and on the ordinate the real part of the
impedance in units of Ohm is shown. The diagram in FIG. 8a
comprises several "simulated" curves 110a, 110b and 110c
representing simulation results. The curve 110a has been simulated
for a bias circuit without a bypass-coupling path. It was simulated
for a resistor Rb1 with a resistance of about 42 k.OMEGA. and for a
resistor Rb2 with a resistance of about 3 k.OMEGA. and without the
bypass-coupling path. The curve 110b has been simulated with the
same resistance values for the resistors Rb1 and Rb2, but with the
bypass-coupling path comprising the feedback impedance element Rf
with a resistance value of about 13.3 k.OMEGA.. In order to make
the influence of the resistance values for the resistors Rb1 and
Rb2 clear, different resistance values have been chosen for the
simulated curve 110c. For this simulation (curve 110c), the
resistor Rb1 comprises a resistance of about 12413.OMEGA. and the
resistor Rb2 comprises a resistance of about 887.OMEGA.. The
simulation of curve 110c was performed for a bias circuit without
the bypass-coupling path.
The input impedance for the bias circuitry without bypass-coupling
path is mainly given by the resistance value of the second
impedance element Rb2, as can be seen in the corresponding
simulated curves 110a, 110b. A desired high input impedance of the
bias circuit for high frequencies may be achieved for a bias
circuit without bypass-coupling path in the configuration described
with reference to curve 110a. However, in this configuration the
input impedance for low frequencies is much higher compared to the
input impedance of the simulated curves 110b, 110c. The curve 110c,
however comprises only a slightly increased input impedance for
higher frequencies in a desired frequency-of-operating range.
The simulated curve 110b for the modified bias circuit with a
bypass-coupling path combines both, a low input impedance behavior
for low frequencies and a high input impedance behavior for high
frequencies in a desired frequency-of-operation range.
It should be mentioned here that the resistors Rb1 and Rb2 can be
used to set the operating point of the current mirror of the bias
circuit. If the current ratio of the current mirror is N, for
example, N=14, the resistors Rb1 and Rb2 may be chosen by the
formula Rb1=NRb2. In this configuration, the resistor Rb2 may serve
as a high frequency block. Rb2, or the input impedance of the bias
circuit, should be high at the frequency-of-operation, compared to
the input impedance of the low noise amplifier transistor. The
smaller the input impedance of the bias circuit at the desired
frequency-of-operation range, the more high frequency (HF) input
signal may be lost, because of the bias circuit. As a consequence,
the noise figure of the low noise amplifier may get worse. The high
frequency input signal may be the signal to be amplified, which is
coupled to the low noise amplifier at an input RFIN of the low
noise amplifier.
In FIG. 8a the sum of the resistance values of Rb1 and Rb2 for the
curve 110c gives the resistance value of the feedback impedance
element Rf for curve 110b (Rb1+Rb2=13.3 k.OMEGA.=Rf). Taking into
account that for the resistors Rb1 and Rb2 the formula Rb1=NRb2 is
valid, the resistance value is about 887.OMEGA. for Rb2 and about
12413.OMEGA. for Rb1. With this prerequisite, the simulated curve
110c shows a strongly reduced input impedance in the high frequency
region and, hence, the noise figure (NF) and the S21-parameter,
which describes the transmission behavior from the input to the
output of the amplifier, are degraded. The noise figure for the
modified bias circuit, with a bypass-coupling path is not changed
for the worse. The modified bias circuit combines the effect of a
low input impedance of the bias circuit for low frequencies, with a
high input impedance of the bias circuit for higher frequencies in
a desired frequency-of-operation range. Similar results may be
achieved by choosing small resistance values for the bias resistors
(Rb1, Rb2) and an external coil for HF blocking.
In FIG. 8b, the magnitude of the input impedance of the bias
circuitry, which are described with reference to FIG. 5, is
depicted. The imaginary component represents the reactance of the
bias circuitry. In FIG. 8b, the curve 111a relates, in terms of the
respective circuit and the resistance values of the resistors, to
the curve 110a, the curve 111b relates to the curve 110b and the
curve 111c relates to the curve 110c. The magnitude of the input
impedance of the respective bias circuitry behaves, in this
simulations, like the respective simulated resistance, represented
by the curves 110a, 110b and 110c.
The frequency dependence of the imaginary component of the
impedance is depicted in FIG. 8c. The imaginary component
represents the reactance of the bias circuitry. The respective
curves 112a, 112b and 112c correspond to the bias circuitry with
the respective resistors Rb1, Rb2 and Rf, as described with
reference to the FIG. 8a.
In FIG. 8d, a phase shift angle between the voltage and the current
is depicted. On the ordinate, a phase angle is depicted in
dependence of an input frequency. The curves 113a, 113b and 113c
relate again to the corresponding bias circuitry in FIG. 8a. The
modified bias circuit with the bypass-coupling path shows the
highest phase shift between an applied voltage and a current
compared to the other simulated bias circuitry.
According to embodiments of the invention, a bias circuit with the
bypass-coupling path can be monolithically integrated, for example,
with an amplifier on one chip. Such an amplifier may comprise an
improved intermodulation behavior and an improved compression point
compared to a bias circuit without the bypass-coupling path. The
amplifier, for example, a low noise amplifier, with a desired
compression point, can be realized in current saving way.
Furthermore, some embodiments of the invention may offer the
possibility to reduce the cost of manufacture by saving an external
device, for example, an inductor, a RF-choke or at least one pin.
This may be achieved by avoiding the use of an external inductive
coil for HF blocking, which is sometimes employed in conventional
bias circuitry.
According to embodiments of the invention, an improvement for the
usage of integrated low noise amplifiers can be achieved with
circuit technology measures. In some embodiments, the
bypass-coupling path may result in a feedback path, so that the
compression behavior and the intermodulation behavior of an
amplifier, which is connected to the bias circuit, is improved.
Such a low noise amplifier may be realized as a common emitter
circuit or cascode circuit with a current mirror bias circuit with
a feedback path.
Typical applications for a bias circuit according to embodiments of
the invention are global positioning systems (GPS) applications,
mobile phone and wireless applications, as well as applications in
the automotive field.
In some embodiments of the invention, the bias circuit may comprise
a bias potential regulation loop. The bias potential regulation
loop comprises a current mirror transistor and an impedance
element. The bias potential regulation loop may comprise a feedback
path between the bias connection and the feedback node, via a
bypass-coupling path. The bias potential regulation loop may be
configured to regulate a potential at a feedback node of the bias
circuit. The feedback node of the bias circuit may be coupled to a
control terminal of the current mirror transistor via and the
impedance element.
According to other embodiments of the invention, the bias circuit
comprises a bypass-coupling path, which extends from the bias
connection of the bias circuit to the control terminal of the
current mirror transistor. The bypass-coupling path may bypass the
impedance element. The bias signal, which is provided from the bias
circuit at the bias connection of the bias circuit, may depend on
the potential at the feedback node.
In another embodiment of the invention, the bias potential
regulation loop is configured to reduce an input impedance of the
bias circuit, viewed from the bias connection, with a frequency
lower than the desired frequency-of-operation range, significantly
more than for an input signal with a frequency in a desired
frequency-of-operation range.
The desired frequency-of-operation range may be the operation
frequency of an amplifier. The desired frequency-of-operation range
may be the frequency range for an amplification of an amplifier,
e.g., the amplification range of a LNA. It is also possible that
the desired frequency-of-operation range corresponds to the
frequency range for a linear amplification of an input signal by an
amplifier. In some embodiments of the invention the desired
frequency-of-operation range may be between about 1 MHz and about
10 GHz, for example, at about 2 GHz. In other embodiments the
desired frequency-of-operation range may be different.
Embodiments of the invention comprise an amplifier, which is
comprising an amplifying unit with an input terminal to receive a
signal to be amplified and a bias signal. The signal to be
amplified may be a high frequency signal or a radio frequency
signal, which is coupled to the input terminal of the amplifier.
Furthermore, the amplifier comprises an output to provide an output
signal of the amplifying unit. The output signal is based on the
signal to be amplified, which is received at the input of the
amplifier. The output signal may be amplified compared to the input
signal. Furthermore, the amplifier comprises a bias circuit for
providing a biasing signal at the input of the amplifying unit. In
other words the amplification of the input signal may also depend
on the bias signal from the bias circuit. In embodiments of the
invention, the bias circuit may furthermore comprise a bias
transistor and a feedback node, wherein the feedback node is
coupled to a control terminal of the bias transistor via a first
impedance element. The first impedance element may be a resistor.
The feedback node is furthermore coupled to the input of the
amplifying unit via a second impedance element. The second
impedance element can also be a resistor. The control terminal of
the bias transistor can be coupled to the bias connection via a
bypass-coupling path, which bypasses the first impedance element
and the second impedance element, such that there is a feedback
path via the bypass-coupling path and via the bias transistor from
the bias connection to the feedback node. The bypass-coupling path
may comprise a feedback impedance element, which may be a
resistor.
According to an embodiment of this invention, such an amplifier
described therein can be monolithically integrated on one chip, for
example, on a silicon chip or another semiconductor chip. According
to a further embodiment of the invention, an amplifier described
therein can comprise a feedback node, wherein the feedback is
connected to a terminal of a conductive controllable path of the
support transistor. The control terminal of the support transistor
may be coupled to a terminal of a controllable conductive path of
the bias transistor of the bias circuit. The support transistor may
be configured to contribute to a coupling between the bias
connection and the feedback node. The amplifier described above may
furthermore comprise a capacitive element coupled in parallel to
the controllable conductive path of the bias transistor of the bias
circuit. Due to this, the feedback path between the bias connection
and the feedback node may obtain a low pass characteristic, such
that a boundary frequency for reducing the input impedance of the
bias circuit below a desired operating frequency is given. The
capacitive element can be integrated as an additional device in the
bias circuit or it can be an intrinsic capacitance formed between
the control terminal of the bias transistor and one of its two
terminals of the controllable conductive path.
According to some embodiments of the invention, it is possible to
reduce a voltage drop of an input signal to be amplified at the
first impedance element and at a second impedance element by a
feedback in the feedback path of the bias circuit. As a
consequence, a voltage between the control terminal of the
amplifier transistor of the amplifying unit and a terminal of the
controllable conductive path of the amplifier transistor may be
stabilized by the feedback.
FIG. 9 shows a flow chart of the method for providing a biasing
signal at a bias connection of a bias circuit, comprising a bias
transistor and a feedback node. In this embodiment the method
comprises a coupling 120 of a feedback signal from the feedback
node of the bias circuit via a first impedance element to a control
terminal of the bias transistor. Moreover the method comprises a
coupling 130 of the feedback signal from the feedback node via a
second impedance element to the bias connection and a bypassing 140
the first and the second impedance element, by coupling the control
terminal of the bias transistor to the bias connection via a
bypass-coupling path so that a bypass feedback path is formed from
the bias connection to the feedback node.
Bypassing 140 the first impedance element and the second impedance
element via a bypass-coupling path so that a feedback path is
formed, can be performed, such that for a given frequency below a
desired frequency-of-operation range, a voltage signal at the
feedback node, which may be caused by a voltage signal at the bias
connection of the bias circuit, is opposite in phase to the voltage
signal at the bias connection.
According to other embodiments of the method for providing a
biasing signal at a bias connection to a bias circuit, bypassing
140 may be performed so that high frequency signals above a
boundary frequency are suppressed by a low pass filter, which is
formed by the bias transistor and a parallel coupled capacitive
element.
In another embodiment of the invention, the method further
comprises a providing of the bias signal to an amplifying unit in
order to bias the amplifying unit. The providing of the biasing
signal to an amplifying unit can be performed in such a way that an
operation point of the amplifying unit is stabilized. The bypassing
of the first and the second impedance element can be performed also
in such a way that the operating point of the amplifying unit is
stabilized.
While this invention has been described in terms of several
embodiments, there are alterations, permutations, and equivalents
which fall within the scope of this invention. It should be noted
that there are many alternative ways of implementing the bias
circuit and amplifier of the invention and of performing the
method. It is therefore intended that the following appended claims
be interpreted as including all such alterations, permutations and
equivalents as fall within the true spirit and scope of the
invention.
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