U.S. patent number 7,042,150 [Application Number 10/742,640] was granted by the patent office on 2006-05-09 for light-emitting device, method of fabricating the device, and led lamp using the device.
This patent grant is currently assigned to Showa Denko K.K.. Invention is credited to Takaki Yasuda.
United States Patent |
7,042,150 |
Yasuda |
May 9, 2006 |
Light-emitting device, method of fabricating the device, and LED
lamp using the device
Abstract
A semiconductor light-emitting device has a substrate (1), a
semiconductor layer (3) and a light-emitting layer (5), and the
substrate is furnished on the surface thereof underlying the
semiconductor layer with an irregular construction possessing
inclined lateral surfaces forming an angle .theta. to the substrate
in the range of 30.degree.<.theta.<60.degree., to provide a
light-emitting device enhanced in the effect of fetching light.
Inventors: |
Yasuda; Takaki (Chiba,
JP) |
Assignee: |
Showa Denko K.K. (Tokyo,
JP)
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Family
ID: |
32995576 |
Appl.
No.: |
10/742,640 |
Filed: |
December 22, 2003 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20040189184 A1 |
Sep 30, 2004 |
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Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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60436471 |
Dec 27, 2002 |
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Foreign Application Priority Data
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Dec 20, 2002 [JP] |
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2002-369092 |
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Current U.S.
Class: |
313/498; 257/103;
257/98; 257/E21.113; 257/E21.119; 257/E21.121; 257/E21.131;
257/E33.068; 313/512; 362/800 |
Current CPC
Class: |
H01L
21/0237 (20130101); H01L 21/0242 (20130101); H01L
21/0243 (20130101); H01L 21/0254 (20130101); H01L
21/0262 (20130101); H01L 21/02639 (20130101); H01L
33/22 (20130101); Y10S 362/80 (20130101) |
Current International
Class: |
H01L
33/00 (20060101) |
Field of
Search: |
;313/498,499,512
;362/800,98,103 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
Other References
Kazuyuki Tadatomo, et al.; "High Output Power InGaN Ultraviolet
Light-Emitting Diodes Fabricated on Patterned Substrates Using
Metalorganic Vapor Phase Epitaxy"; Japan Journal of Applied
Physics; vol. 40; Part 2, No. 6B, Jun. 15, 2001; pp. L 583-L 585.
cited by other.
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Primary Examiner: Patel; Ashok
Attorney, Agent or Firm: Sughrue Mion, PLLC
Parent Case Text
CROSS REFERENCE TO RELATED APPLICATIONS
This application is an application filed under 35 U.S.C.
.sctn.111(a) claiming the benefit pursuant to 35 U.S.C.
.sctn.119(e)(1) of the filing date of Provisional Application No.
60/436,471 filed Dec. 27, 2002 pursuant to 35 U.S.C. .sctn.111(b).
Claims
The invention claimed is:
1. A light-emitting device comprising a substrate, a semiconductor
layer and a light-emitting layer, wherein the substrate and the
semiconductor layer superposed thereon differ in refractivity, the
substrate is furnished on a surface thereof underlying the
semiconductor layer with irregularities possessing inclined lateral
surfaces, and the inclined lateral surfaces form an angle .theta.
to the substrate in the range of
30.degree.<.theta.<60.degree..
2. The light-emitting device according to claim 1, wherein the
irregularities are V-shaped grooves in a pattern of stripes,
laterally inclined projections in a pattern of stripes or laterally
inclined pits.
3. The light-emitting device according to claim 2, wherein the
substrate is made of sapphire (Al.sub.2O.sub.3) and the
semiconductor layer is made of Al.sub.xGa.sub.yIn.sub.1-x-yN
(0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1).
4. An LED lamp using the light-emitting device according to claim
3.
5. An LED lamp using the light-emitting device according to claim
2.
6. The light-emitting device according to claim 1, wherein the
substrate is made of sapphire (Al.sub.2O.sub.3) and the
semiconductor layer is made of Al.sub.xGa.sub.yIn.sub.1-x-yN
(0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1).
7. An LED lamp using the light-emitting device according to claim
6.
8. An LED lamp using the light-emitting device according to claim
1.
9. A light-emitting device comprising a substrate, superposed
semiconductor layers and a light-emitting layer, wherein the
superposed semiconductor layers mutually differ in refractivity and
are furnished on an interface thereof with irregularities
possessing inclined lateral surfaces.
10. The light-emitting device according to claim 9, wherein, the
inclined lateral surfaces of the irregularities form an angle
.theta. to the substrate in the range of
30.degree.<.theta.<60.degree..
11. The light-emitting device according to claim 10, wherein the
irregularities are V-shaped grooves in a pattern of stripes,
laterally inclined projections in a pattern of stripes or laterally
inclined pits.
12. The light-emitting device according to claim 11, wherein the
substrate is made of sapphire (Al.sub.2O.sub.3) and the
semiconductor layer is made of Al.sub.xGa.sub.yIn.sub.1-x-yN
(0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1).
13. An LED lamp using the light-emitting device according to claim
12.
14. An LED lamp using the light-emitting device according to claim
11.
15. The light-emitting device according to claim 10, wherein the
substrate is made of sapphire (Al.sub.2O.sub.3) and the
semiconductor layer is made of Al.sub.xGa.sub.yIn.sub.1-x-yN
(0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1).
16. An LED lamp using the light-emitting device according to claim
15.
17. An LED lamp using the light-emitting device according to claim
10.
18. The light-emitting device according to claim 9, wherein the
irregularities are V-shaped grooves in a pattern of stripes,
laterally inclined projections in a pattern of stripes or laterally
inclined pits.
19. The light-emitting device according to claim 18, wherein the
substrate is made of sapphire (Al.sub.2O.sub.3) and the
semiconductor layer is made of Al.sub.xGa.sub.yIn.sub.1-x-yN
(0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1).
20. An LED lamp using the light-emitting device according to claim
19.
21. An LED lamp using the light-emitting device according to claim
18.
22. The light-emitting device according to claim 9, wherein the
substrate is made of sapphire (Al.sub.2O.sub.3) and the
semiconductor layer is made of Al.sub.xGa.sub.yIn.sub.1-x-yN
(0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1).
23. An LED lamp using the light-emitting device according to claim
22.
24. An LED lamp using the light-emitting device according to claim
9.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a light-emitting diode (LED), with
its light-fetching efficiency exalted, to a method for the
fabrication thereof and to an LED lamp using the LED.
2. Description of the Prior Art
A light-emitting device endowed with an improved efficiency of
energy consumption (external quantum efficiency) has been yearned
for with a view to promoting the saving on energy. In the GaN-type
light-emitting diode superposed on a sapphire substrate, the
external quantum efficiency of the conventional light-emitting
diode (LED) operating in the neighborhood of 382 nm has been 24%
according to JP-A 2002-164296. The external quantum efficiency, as
the product of "(internal quantum efficiency).times.(voltage
efficiency).times.(light fetching efficiency)," is decomposed into
the three elements. The two elements other than the actually
measurable voltage efficiency (about 90 to 95%) are incapable of
actual measurement. Notwithstanding the levels of these elements
remain yet to be clarified, the improvement of the internal quantum
efficiency that has mainly resorted to the quality of crystal and
the optimization of construction has been chiefly studied. On the
other hand, as an example of the improvement achieved in the
efficiency of fetching light, the method has been in vogue since a
long time ago, which represses the total reflection on the
interface between resin and air by coating an LED chip with a resin
approximating a semiconductor in refractivity, thereby allowing the
emitted light to penetrate the resin efficiently, and further
forming the resin surface in a spherical shape. Then, as an example
of the realization of the increase of the efficiency of fetching
light to about twice the ordinary level by grinding a substrate in
the shape of an inverse mesa, Cree Corp. of the U.S. has been
marketing the product embodying this increase under the designation
of X-Bright series.
As a way of implementing the measure to allay the trend of a
semiconductor crystal toward dislocation, a method that consists in
rendering the surface of a semiconductor crystal substrate
irregular and then allowing a semiconductor layer to grow has
become generally known. In the case of a semiconductor of the
nitride of an element of Group In, for example, it has been
demonstrated that the density of dislocation can be allayed by
forming grooves in the pattern of stripes on the surface of a
sapphire substrate and then inducing epitaxial growth thereon of a
GaN buffer layer liable to grow at a low temperature and further
thereon of the crystal of the semiconductor of the nitride of an
element of Group In liable to grow at a high temperature. It is
held that for this decrease of the density of dislocation, the
grooves are preferably inclined by an angle of 60.degree. or more.
No mention, however, is made of the efficiency of fetching light
(refer, for example, to JP-A 2002-164296 and K. Tadamoto, et at.,
Japanese Journal of Applied Physics, 2001, Vol. 40, p. L583 L585).
However, these references do not touch upon the efficiency of
fetching light
Generally, the light-emitting device (LED) has been incapable of
causing a ray of light having an angle of incidence larger than the
angle of total reflection to be fetched from a light-emitting layer
to the exterior because the refractive index of the light-emitting
layer is larger than the refractive index of the external
medium.
Object of the present invention is to provide a light-emitting
device improved in the efficiency of fetching light by introducing
irregularities having a lateral face inclined to the interface
between two layers differing in refractivity, thereby enabling the
totally reflected ray of light to be fetched to the exterior, a
manufacturing method thereof and a LED lamp using the
light-emitting device.
To begin with, the circumstances that have brought the present
invention to perfection will be described by way of simulation
below.
With the object of estimating the efficiency of fetching light and
the internal quantum efficiency that are actually unmeasurable, the
present inventor estimated the efficiency of fetching light from an
LED by optical simulation. As a simplified LED model, a
construction formed by superposing a GaN layer measuring the square
of 300 .mu.m in area and 6.1 .mu.m in thickness on a sapphire
substrate measuring the square of 300 .mu.m in area and 100 .mu.m
in thickness was adopted. A point light source capable of
isotropically emitting light was disposed at a point forming the
center of the square of 300 .mu.m and entering the GaN layer to a
depth of 0.1 .mu.m from the GaN surface. The refractive index of
sapphire was n=1.8 and that of GaN was n=2.7 (when the wavelength
of the emitted light was 380 nm) or n=2.4 (when the wavelength of
the emitted light was 400 nm) and the exterior part of the two
substances was assumed to be filled with silicone resin having a
refractive index of n=1.4. The refractive indexes of GaN at the
different wavelengths were determined by subjecting the
commercially available GaN bulk substrates to actual measurement.
From the point light source, numerous rays of light were emitted in
random directions (Monte Carlo method). The rays of light were
ramified at the individual interfaces differing in refractivity
into the rays of light refracting in accordance with the Fresnel
formula and the reflected rays of light at calculated ratios. The
number of rays of light emitted was 500,000 and the limit of the
cycles of ramification was set at 10. The light collecting surfaces
were hypothetically set slightly on resin sides from the interfaces
between the resin and each of the back surface of the substrate,
the front surface of the semiconductor layer and the lateral
surface, and the efficiencies of fetching light from the individual
light collecting surfaces were calculated.
Table 1 shows the results of the calculation by simulation of the
efficiencies of fetching light from the surface of the substrate,
the surface of the semiconductor and the lateral surfaces,
respectively in the cases of omitting formation of an irregular
construction on the substrate ({circumflex over (1)} and
{circumflex over (2)}) and the case of forming an irregular
construction shown in FIG. 1 on the surface of the substrate
({circumflex over (3)}.
TABLE-US-00001 TABLE 1 Lateral surfaces (GaN lateral surface and
Calculation of Back Front surface sapphire efficiency of Refractive
surface of of semi- lateral fetching light index substrate
conductor surface) Total {circle around (1)} LED having Resin 7.1%
7.4% 10.1% .times. 4 = 40.4% 54.9% GaN/sapphire n = 1.4, (7.4%,
2.7%) sealed with GaN silicone resin, n = 2.4, wavelength of
Sapphire emitted light: substrate 400 nm n = 1.8 {circle around
(2)} Same as Resin 5.1% 5.4% 7.2% .times. 4 = 28.8% 39.3% above, n
= 1.4, (5.4%, 1.8%) wavelength of GaN emitted light: n = 2.7, 382
nm Sapphire substrate n = 1.8 {circle around (3)} LED having Resin
25.7% 5.3% Lateral 92.4% irregular n = 1.4, surface construction
GaN perpendicular (FIG. 1) n = 2.7, to grooves in containing
lateral Sapphire the pattern of surfaces of substrate stripes angle
of n = 1.8 15.3% (0.5%, inclination of 45.degree. 14.8%) .times. 2,
formed in lateral surface the interface of parallel to
GaN/sapphire, grooves in the wavelength of pattern of emitted
light: stripes 382 nm 15.4% (0.5%, 14.9%) .times. 2
According to the results, when the substrate is not furnished with
the irregular construction, the total of efficiencies of fetching
light was about 55% when the wavelength of emitted light was 400 nm
and about 40% when the wavelength thereof was 382 nm.
These results are applied to the LED disclosed in Journal of
Applied Physics mentioned above. This reference, concerning the LED
of the semiconductor of the nitride of an element of Group III
using a sapphire substrate, has a mention that the external quantum
efficiency is 24% when the wavelength of emitted light is 382 nm
and 30% when the wavelength thereof is 400 nm. On the assumption
that the external quantum efficiency of 24% (24%=internal quantum
efficiency of 60%.times.voltage efficiency of 95%.times.(efficiency
of fetching light of 40%) and the external quantum efficiency of
30% (30%=internal quantum efficiency of 60%.times.voltage
efficiency of 90%.times.efficiency of fetching light of 55%), the
internal quantum efficiency which has no bearing on the wavelength
of emitted light can be uniquely indicated as 60% and the results
of the simulation seem to be generally appropriate.
According to this simulation, the efficiency of fetching light is
about 55% at a wavelength of 400 nm and about 40% at a wavelength
of 382 nm, indicating that it has room for improvement to 1.8 times
and 2.5 times respectively the ordinary level. Also, the internal
quantum efficiency has room for improvement to about 1.6 times the
ordinary level. This invention concerns the efficiency of fetching
light among other elements involved herein.
A detailed analysis of the results of the simulation has revealed
that when the GaN layer and the sapphire substrate are sealed with
a resin having a refractive index n=1.4, the ray of light which has
permeated the GaN layer and the sapphire substrate is fetched in
100% through the resin to the exterior and that a solution to the
question how the group of rays of light entrapped in the GaN layer
are fetched to the sapphire substrate and the resin forms an
important key to the improvement in the efficient of fetching
light.
For the purpose of enabling the rays of light in the GaN layer to
permeate the sapphire substrate and the resin, it is only necessary
that the interface between the GaN layer and the substrate be
inclined and that the angles of incidence of the rays of light on
the interface be prevented from exceeding the angle of total
reflection. The optimum angle of inclination is 45.degree.. The
results of the calculation performed in the case of introducing the
construction of irregularities resembling stripes illustrated in
FIG. 1 and having an angle of inclination of 45.degree. to the
interface between the GaN layer 3 and the sapphire substrate 1 of
the case of {circumflex over (3)} given in Table 1 will be shown
below. It is noted that the efficiency of fetching light from the
sapphire back and lateral surfaces to the exterior is improved,
while the efficiency of fetching light from the semiconductor
surface through the resin to the exterior is not varied very much.
When the wavelength of the emitted light is 382 nm as a total (the
refractive index of GaN: 2.7), therefore, it can be expected that
the efficiency of fetching light is improved to twice or more the
efficiency of the case of {circumflex over (2)}. Incidentally, as
regards the ratio of the upper surface, bottom surface and inclined
surfaces of the irregular construction, the construction that is
destitute of the upper surface and the lower surface and is formed
solely of the inclined surfaces proves advantageous because it has
the highest efficiency of fetching light.
The present invention has been perfected on the basis of the
results of simulation mentioned above.
SUMMARY OF THE INVENTION
This invention provides a light-emitting device comprising a
substrate, a semiconductor layer and a light-emitting layer,
wherein the substrate and the semiconductor layer superposed
thereon differ in refractivity, the substrate is furnished on the
surface thereof underlying the semiconductor layer with
irregularities possessing inclined lateral surfaces, and the
inclined lateral surfaces form an angle .theta. to the substrate in
the range of 30.degree.<.theta.<60.degree..
This invention also provides a light-emitting device comprising a
substrate, superposed semiconductor layers and a light-emitting
layer, wherein the superposed semiconductor layers mutually differ
in refractivity and are furnished on the interface thereof with
irregularities possessing inclined lateral surfaces.
In the light-emitting device just mentioned above, the inclined
lateral surfaces of the irregularities form an angle .theta. to the
substrate in the range of 30.degree.<.theta.<60.degree..
In any one of the light-emitting devices mentioned above, the
irregularities are V-shaped grooves in the pattern of stripes,
laterally inclined projections in the pattern of stripes or
laterally inclined pits.
In any one of the light-emitting devices mentioned above, the
substrate is made of sapphire (Al.sub.2O.sub.3) and the
semiconductor layer is made of Al.sub.xGa.sub.yIn.sub.1-x-yN
(0.ltoreq..times..ltoreq.1, 0.ltoreq.y.ltoreq.1).
The present invention also provides a method for the fabrication of
a light-emitting device comprising a substrate, a semiconductor
layer and a light-emitting layer, comprising using one of methods
of high-temperature treatment, selective etching and grinding to
provide the substrate on the surface thereof on the side underlying
the semiconductor layer with irregularities.
The present invention also provides a method for the fabrication of
a light-emitting device comprising a substrate, superposed
semiconductor layers and a light-emitting layer, comprising forming
a mask for selective growth on the surface of the substrate and
furnishing the substrate thereon with semiconductor projections
having inclined lateral surfaces to form irregularities having
inclined lateral surfaces on the interface of the superposed
semiconductor layers.
The present invention also provides a method for the fabrication of
a light-emitting device comprising a substrate, superposed
semiconductor layers and a light-emitting layer, comprising using
one of methods of high-temperature treatment, selective etching and
grinding to provide the semiconductor layers on the surfaces
thereof with irregularities having inclined lateral surfaces,
thereby forming irregularities having inclined lateral surfaces on
the interface of the superposed semiconductors.
The present invention further provides a method for the fabrication
of a light-emitting device comprising a substrate, a semiconductor
layer and a light-emitting layer, comprising forming a mask for
selective growth on the surface of the semiconductor layer and
providing the semiconductor layer thereon with semiconductor
projections having inclined lateral surfaces.
The present invention further provides an LED lamp using any one of
the light-emitting devices mentioned above.
As described above, by forming an irregular construction on the
surface of the substrate of the semiconductor light-emitting device
or forming an irregular construction having inclined lateral
surfaces on the interface of the semiconductor layers, the present
invention makes it possible to enhance the efficiency of fetching
light.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a typical diagram illustrating the state in which a
sapphire substrate furnished thereon with a GaN layer used for
optical simulation has formed thereon an irregular construction
possessing lateral surfaces inclined by an angle of 45.degree.
relative to the surface of the substrate.
FIG. 2 is a typical diagram illustrating one example of the
construction of a semiconductor light-emitting device according to
this invention.
FIG. 3(a) is a typical diagram illustrating an example of the
irregular construction formed such as on a substrate in the present
invention, which comprises V-shaped grooves.
FIG. 3(b) is a typical diagram illustrating an example of the
irregular construction formed such as on a substrate in the present
invention, which comprises pits of a hexagonal cone trapezoidal in
cross section.
FIG. 3(c) is a typical diagram illustrating an example of the
irregular construction formed such as on a substrate in the present
invention, which comprises triangle projections in the pattern of
stripese.
FIG. 4 is a typical diagram illustrating an LED lamp using the
light-emitting device according to the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENT
The light-emitting device of the present invention has
irregularities having inclined lateral surfaces formed on the
surface of a substrate or on the interface of adjacent superposed
semiconductor layers. The reflection of light on the interface
between a substrate and a semiconductor layer superposed thereon or
on the interface of adjacent superposed semiconductor layers occurs
when the superposed layers show a change in refractivity across
their interface. This invention is aimed at enabling the light to
be fetched as much as possible to the exterior of the LED when the
two layers differ in refractivity.
The mechanism of the improvement in the efficiency of fetching
light brought about by the provision of such irregularities as
mentioned above will be omitted from the detailed description under
way. Qualitatively, the light reflected on the interface of
superposition when the interface is flat is such that it will not
frequently issue therefrom to the exterior because the same
condition is repeated in accordance as the reflection is repeated.
When the interface is furnished with the irregularities, the light
once reflected and then allowed to impinge on the interface
possibly, if not invariably, forms an angle smaller than the angle
of total reflection. It is inferred that the light that issues to
the exterior is eventually increased when this situation is
repeated.
The light-emitting device of this invention, in the first aspect
thereof, provides the substrate on the surface thereof (the side
for supporting the semiconductor layer; the same remark applies
hereinafter) with irregularities having slanted lateral surfaces
and, in the second aspect thereof, provides the adjacent
semiconductor layers on the interface of superposition thereof with
the irregularities mentioned above. The LED, as illustrated in FIG.
2, has semiconductor layers 3, such as buffer layers, an n-type
semiconductor layer 4, a light-emitting layer 5, a p-type
semiconductor layer 6, and the like superposed on a substrate 1.
The surface of the substrate 1 expected to form the irregularities
2 thereon does not need to be particularly discriminated, but is
only required to be any of the interfaces of superposition of two
adjacent semiconductor layers differing in refractivity.
Preferably, it is selected from among the interfaces that bring
great effects. The expression "interface of superposition of
semiconductor layers" embraces the interface between a
semiconductor layer and a light-emitting layer.
Typical constructions of irregularities formed as on the substrate
in this invention are typically illustrated in FIG. 3(a) to FIG.
3(c). FIG. 3(a) depicts the formation of V-shaped grooves in the
pattern of stripes on the surface of a substrate, FIG. 3(b) the
formation of pits of a trapezoidal cross section resembling
hexagonal cones on the surface of a substrate, and FIG. 3(c) the
formation of triangular projections made of a semiconductor in the
pattern of stripes on the surface of a substrate. The symbol
.theta. shown in the diagrams denotes the angle formed by the
inclined lateral surfaces of the irregularities relative to the
surface of the substrate. The angle .theta. of the inclined lateral
surfaces of the irregularities formed on the substrate is most
preferably 45.degree.. The inclined surfaces are fully effective so
long as this angle falls in the range of
30.degree.<.theta.<60.degree..
Though the angle of the inclined lateral surfaces of the
irregularities formed on the interface between adjacent
semiconductor layers does not need to be particularly restricted,
it is preferably in the range of
30.degree.<.theta.<60.degree. similarly to that on the
substrate.
The irregularities formed as on the substrate may be made to
conform to the plane direction of the substrate or semiconductor
layer or may be made to deviate intentionally therefrom. The size
and the depth of irregularities may be arbitrarily selected. In
consideration of the laudability of flattening the surface of the
semiconductor crystal of the nitride of an element of Group III to
be grown on the interface forming the irregularities thereon, the
diameter of the depression is preferred to be 3 .mu.m or less and
the depth of the depression to be 2 .mu.m or less. The flattening
can be easily realized by properly selecting the conditions for the
growth of the semiconductor layer as demonstrated in Non-Patent
Document 1.
As concrete examples of the method for forming irregularities as on
the substrate in accordance with this invention, the formation of
pits by a high-temperature treatment, the formation of grooves or
pits in the pattern of stripes by selective etching, and the
formation of V-shaped grooves by the use of an abrasive may be
cited. The term "V-shaped grooves" as used herein is expected to
embrace those that have a flattened bottom part and those that have
more or less rounded lateral surfaces. Besides these depressed
shape, projections of a triangular cross section may be formed in
the pattern of stripes as. on the substrate by masking the
substrate and allowing the semiconductor to grow selectively.
As regards the angle of the inclined surfaces of the irregularities
that are formed by the preceding method, the V-shaped grooves by
the grinding method have an angle mostly falling in the range of
30.degree. to 60.degree. and the pits by the high-temperature
treatment have an angle substantially fixed at 58.degree. or
43.degree. by the crystal plane. When the substrate of SiN is
covered with a given mask and the semiconductor of AlN or GaN is
grown thereon, the triangular projections that are formed
consequently have an angle of inclination of 58.degree. or
43.degree..
This invention permits use of glass, Si, GaAs and GaP, besides
sapphire, GaN, AlN and SiC for the substrate. Among these
substances, the case of using sapphire (Al.sub.2O.sub.3) for the
substrate and the semiconductor of the nitride of an element of
Group III for the semiconductor layer proves particularly
favorable.
As the plane direction of the sapphire substrate, the m plane, the
a plane, the c plane, etc. may be used. Among these planes, the c
plane (the (0001) plane) proves particularly favorable. It is
further preferable that the vertical axis of the surface of the
substrate is inclined in a specific direction from the direction
<0001>. Further, the substrate to be used in this invention
is preferred to be pretreated with an organic detergent or by
etching before it is put to the first step of fabrication because
it is enabled to maintain the surface thereof in a fixed state.
In the fabrication of the light-emitting device of this invention,
the growth of the n-type layer, p-type layer and light-emitting
layer, the formation of the electrodes and the resin sealing may be
accomplished by use of any of the heretofore well-known methods.
For the growth of a semiconductor by the technique of vapor growth,
the method of metal organic chemical vapor deposition (MOCVD
method) and the method of vapor phase epitaxy (VPE method) may be
adopted. In these methods, the MOCVD method proves particularly
favorable because it is capable of flattening the unnecessary
construction of irregularities.
The light-emitting device of the present invention is subjected to
bonding onto a sub-mount 34, connected by wiring to a lead frame
and sealed with resin to advantageously fabricate an LED lamp
resembling a cannonball as illustrated in FIG. 4.
Now, this invention will be described specifically below with
reference to Examples. However, this invention is not restricted to
the Examples.
EXAMPLE 1
In Example 1, a sapphire substrate having a (0001) plane as the
surface thereof was used. A sand paper having a diamond type
abrasive applied. thereto was coated with purified water and rubbed
against the sapphire substrate as kept moved in the <1-100>
direction of the sapphire substrate so as to form an irregular
construction linearly roughly in the <1-100> direction. The
depressions in the irregular construction, when observed under an
SEM, were found to have a triangular cross section (V-shaped
groove) measuring 1 .mu.m in width and 0.5 .mu.m in depth. The
angles .theta. formed between the leading edges of inclined
surfaces of the V-shaped grooves and the flat surface of the
substrate were approximately in the range of 30.degree. to
60.degree. centering around 45.degree.. When they were observed
under a 600-power optical microscope, the ratios of the areas of
flat parts and the areas of scratched parts were found to be 2:1 on
the average.
The sapphire substrate so fabricated to incorporate therein
V-shaped grooves as described above was thoroughly washed and put
in a MOCVD device. As the first step, the sapphire substrate was
subjected to a treatment that consisted in sweeping the substrate
with a gas containing a gaseous mixture formed of the vapor of
trimethyl aluminum (TMAl) and the vapor of trimethyl gallium (TMGa)
at a molar ratio of 1:2 and a gas containing ammonia (NH.sub.3).
The V/III ratio under the conditions used in the first step was
about 85. Subsequently, as the second step, the substrate was swept
with TMGa and ammonia to induce growth of gallium nitride and
eventual formation of a GaN layer formed of gallium nitride
crystals on the sapphire substrate fabricated in an irregular
shape.
The first and second steps for producing the sample containing the
GaN layer were carried out in accordance with the following
procedure using the MOCVD method.
First, before the sapphire substrate having the surface thereof
fabricated in an irregular shape was introduced to the device, the
deposit attached fast to the interior of the reaction furnace
during the previous growth in the same device was heated and
nitrided in a gas containing ammonia and hydrogen so as to render
the deposit less liable to further decomposition. After the
reaction furnace had cooled to room temperature, the sapphire
substrate mounted on a susceptor made of carbon and used for
heating in a glove box which had undergone displacement of the
entrapped air with nitrogen gas was introduced into a reaction
furnace made of quartz and installed inside an RF coil of an
induction heater. After the introduction of the sample, the
reaction furnace had the interior thereof purged with a forced
current of nitrogen gas. After the current of nitrogen gas was
continued for 10 minutes, the induction heater was put to operation
and made to elevate the temperature of the substrate over a period
of 10 minutes to 1170.degree. C. The substrate, as kept at the
temperature of 1170.degree. C. and swept with hydrogen gas and
nitrogen gas, was left standing for nine minutes to effect thermal
cleaning of the surface of the substrate.
While the thermal cleaning was in progress, a hydrogen carrier gas
was supplied to the piping of a container (bubbler) holding
trimethyl gallium (TMGa) as a raw material and a container
(bubbler) holding trimethyl aluminum (TMAl) both connected to the
reaction furnace to start a bubbling treatment. The temperature of
each of the bubblers was adjusted to a fixed level by the use of a
constant temperature bath intended to adjust temperature. The
vapors of TMGa and TMAl generated by the bubbling were supplied
together with the carrier gas to the piping of a removal device
till the step for growth began and they were then released via the
removal device to the exterior of the system. After the thermal
cleaning was terminated, the valve for the nitrogen carrier gas was
closed in order to limit the supply of gas to the interior of the
reaction furnace to hydrogen.
Subsequent to the switchover of the carrier gas, the temperature of
the substrate was lowered to 1150.degree. C. After the
stabilization of this temperature at 1150.degree. C. was confirmed,
the valve of the ammonia piping was opened to start the flow of
ammonia into the furnace. Then, the valves of the piping for TMGa
and piping for TMAl were switched simultaneously to supply the gas
containing the vapors of TMGa and TMAl into the reaction furnace
and start the first step of depositing the semiconductor of the
nitride of an element of Group III on the sapphire substrate. The
amounts of TMGa and TMAl to be supplied were adjusted to a molar
ratio of 2:1 by means of a flow volume adjuster inserted in the
piping used for bubbling, and the amount of ammonia was adjusted so
as to set the V/III ratio at 85.
After this treatment had lasted for six minutes, the valves in the
piping for TMGa and piping for TMAl were simultaneously switched
over to stop the supply of the gas containing the vapors of TMGa
and TMAl into the reaction furnace. Subsequently, the supply of
ammonia was stopped as well and the furnace was left standing in
the ensuing state for three minutes.
After the annealing had lasted for three minutes, the valve in the
piping for ammonia gas was switched over to start again the supply
of ammonia gas into the furnace. The flow of ammonia was allowed to
continue without any variation for four minutes. In this while, the
flow volume of TMGa through the piping thereof was adjusted with
the relevant flow volume adjuster. After the elapse of four minutes
thence, the valve for TMGa was switched over to start the supply of
TMGa into the furnace and initiate the growth of GaN. The growth of
the GaN layer was continued over a period of about three hours.
Subsequently, an n-type layer, a light-emitting layer and a p-type
layer were sequentially superposed in the order mentioned in the
next step to produce an epitaxial wafer for an LED.
To begin with, while the supply of TMGa was being continued, the
supply of SiH.sub.4 was started and the ensuing growth of a low
Si-doped n-type GaN layer was continued for about one hour and 15
minutes. The amount of SiH.sub.4 to be supplied was so adjusted
that the electron concentration in the low Si-doped GaN layer would
reach 1.times.10.sup.17 cm.sup.-3. The thickness of the low
Si-doped GaN layer was 2 .mu.m.
Further, on this low Si-doped GaN layer, a high Si-doped n-type GaN
layer was grown. After the growth of the low Si-doped GaN layer,
the supply of TMGa and SiH.sub.4 to the interior of the furnace was
suspended over a period of one minute. During this suspension, the
flow volume of SiH.sub.4 was varied. The amount of SiH.sub.4 to be
supplied was studied in advance and adjusted so that the electron
concentration in the high Si-doped GaN layer would reach
1.times.10.sup.19 cm.sup.-3. The supply of ammonia into the furnace
was continued at the unchanged flow volume.
After the one-minute's suspension, the supply of TMGa and SiH.sub.4
was resumed and the ensuing growth was continued over the period of
one hour. By this procedure, the high Si-doped n-type GaN layer
having a thickness of 1.8 .mu.m was formed.
After the growth of the high Si-doped GaN layer, the valves for
TMGa and SiH.sub.4 were switched to stop the supply of these raw
materials into the furnace. While the supply of ammonia was
continued at the unchanged flow volume, the valves were switched to
change the carrier gas from hydrogen to nitrogen. Thereafter, the
temperature of the substrate was lowered from 1160.degree. C. to
830.degree. C.
While the temperature of the interior of the furnace was being
changed, the amount of SiH.sub.4 to be supplied was varied. The
amount of supply was studied in advance and adjusted so that the
electron concentration in the Si-doped InGaN clad layer would reach
1.times.10.sup.17 cm.sup.-3. The supply of ammonia into the furnace
was continued at the unchanged flow volume. The supply of a carrier
gas to the bubblers of trimethyl indium (TMIn) and triethyl gallium
(TEGa) was started in advance. The SiH.sub.4 gas and the vapors of
TMIn and TEGa generated by bubbling were supplied together with the
carrier gas to the piping of the removal device till the step for
growing a clad layer began, and they were released via the removal
device into the exterior of the system.
Subsequently, while the state of the interior of the furnace was
being stabilized, the valves for TMIn, TEGa and SiH.sub.4 were
simultaneously switched to start the supply of these raw materials
to the interior of the furnace. This supply was continued over a
period of about 10 minutes to form an n-type clad layer formed of
Si-doped In.sub.0.03Ga.sub.0.97N in a thickness of 100 .ANG..
Thereafter, the valves for TMIn, TEGa and SiH.sub.4 were switched
to stop the supply of these raw materials.
Next, a light-emitting layer of the multiple quantum well
construction formed of a barrier layer of GaN and a well layer of
In.sub.0.06Ga.sub.0.94N was produced. In the production of the
construction of multiple quantum well, first a barrier layer of GaN
was formed on an n-type clad layer formed of Si-doped
In.sub.0.03Ga.sub.0.97N and then a well layer of
In.sub.0.06Ga.sub.0.94N was formed on the GaN barrier layer. The
formation of this construction was performed up to five repetitions
and then a sixth GaN barrier layer was formed on the fifth
In.sub.0.06Ga.sub.0.94N well layer to give rise to a construction
having two GaN barrier layers bordering one each on the opposite
sides of the multiple quantum well construction.
Specifically, after the growth of the n-type clad layer was
terminated, the operation was suspended over a period of 30
seconds. Subsequently, while the temperature of the substrate, the
pressure inside the furnace and the flow volume and kind of a
carrier gas were retained unchanged, the valve for TEGa was
switched to supply TEGa to the interior of the furnace. After the
supply of TEGa was continued over a period of seven minutes, the
valve was switched again to stop the supply of TEGa and terminate
the growth of the GaN barrier layer. Consequently, the GaN barrier
layer having a thickness of 70 .ANG. was formed.
While the growth of the GaN barrier layer was being continued, the
flow volume of TMIn to the piping for the removal device was
adjusted in molar ratio to twice the flow volume existing during
the growth of the clad layer.
After the growth of the GaN barrier layer was terminated, the
supply of the raw material of Group III was suspended over a period
of 30 seconds and, with the temperature of the substrate, the
pressure in the furnace and the flow volume and kind of a carrier
gas retained unchanged, the valves for TEGa and TMIn were switched
to effect the supply of TEGa and TMIn into the furnace. After the
supply of TEGa and TMIn was continued over a period of two minutes,
the valves were switched again to stop the supply of TEGa and TMIn
and terminate the growth of the well layer of
In.sub.0.06Ga.sub.0.94N. Consequently, the In.sub.0.06Ga.sub.0.94N
well layer having a thickness of 20 .ANG. was formed.
After the growth of the In.sub.0.06Ga.sub.0.94N well layer was
terminated, the supply of the raw material of Group III was
suspended over a period of 30 minutes and, with the temperature of
the substrate, the pressure in the furnace and the flow volume and
kind of a carrier gas retained unchanged, the supply of TEGa into
the furnace was started to resume the growth of the GaN barrier
layer.
By performing this procedure up to five repetitions, five GaN
barrier layers and five In.sub.0.06Ga.sub.0.94N well layers were
produced. Furthermore, a GaN barrier layer was formed on the last
In.sub.0.06Ga.sub.0.94N well layer.
On the multiple quantum well construction perfected by this GaN
barrier layer, a non-doped Al.sub.0.2Ga.sub.0.8N
diffusion-preventing layer was produced.
The supply of the carrier gas to the bubbler for trimethyl aluminum
(TMAl) was started in advance. The vapor of TMAl generated by the
bubbling and the carrier gas were together advanced to the piping
to the removal device till the step for growing the
diffusion-preventing layer began, and they were released via the
removal device to the exterior of the system.
While the pressure in the furnace was being stabilized, the valves
for TEGa and TMAl were switched to start the supply of these raw
materials into the furnace. After the ensuing growth was continued
over a period of about three minutes, the supply of TEGa and TMAl
was stopped to terminate the growth of the non-doped
Al.sub.0.2Ga.sub.0.8N diffusion-preventing layer. Consequently, the
non-doped Al.sub.0.2Ga.sub.0.8N diffusion-preventing layer having a
thickness of 30 .ANG. was formed.
A p-type clad layer formed of Mg-doped GaN was produced on this
non-doped Al.sub.0.2Ga.sub.0.8N diffusion-preventing layer.
After the growth of the non-doped Al.sub.0.2Ga.sub.0.8N
diffusion-preventing layer was terminated by stopping the supply of
TEGa and TMAl, the temperature of the substrate was elevated to
1100.degree. C. over a period of two minutes. Further, the carrier
gas was changed to hydrogen. The supply of the carrier gas to the
bubbler for biscyclopentadienyl magnesium (Cp.sub.2Mg) was started
in advance as well. The vapor of Cp.sub.2Mg generated by the
bubbling and the carrier gas were together advanced to the piping
for the removal device till the step for the growth of the Mg-doped
GaN layer began, and they were released via the removal device to
the exterior of the system.
While the pressure in the furnace was being stabilized by the
variation of temperature and pressure, the valves for TMGa and
Cp.sub.2Mg were switched to start the supply of these raw materials
into the furnace. The amount of Cp.sub.2Mg to be supplied was
studied in advance and adjusted so that the hole-concentration in
the p-type clad layer formed of Mg-doped GaN would reach
8.times.10.sup.17 cm.sup.-3. Subsequently, after the ensuing growth
was continued over a period of about six minutes, the growth of the
Mg-doped GaN layer was terminated through stopping the supply of
TMGa and Cp.sub.2Mg. As a result, the Mg-doped GaN layer having a
thickness of 0.15 .mu.m was formed.
After the growth of the Mg-doped GaN layer was terminated, the
supply of electricity to the induction heater was terminated and
the temperature of the substrate was allowed to fall to normal room
temperature over a period of twenty minutes. During the fall of the
growth temperature to 300.degree. C., the carrier gas in the
furnace was formed exclusively of nitrogen to supply NH.sub.3 up to
1% by volume. Subsequently, the supply of NH.sub.3 was stopped and
the use of the carrier gas formed solely of nitrogen in the
reaction furnace was started at the time that the arrival of the
temperature of the substrate at 300.degree. C. was confirmed. The
wafer was removed from the furnace into the ambient air after the
fall of the temperature of the substrate to room temperature was
confirmed.
By the procedure described above, the epitaxial wafer furnished
with the epitaxial layer construction for use in a semiconductor
light-emitting device was fabricated. In this wafer, the Mg-doped
GaN layer exhibited the p-type behavior without undergoing an
annealing treatment necessary for activating a p-type carrier.
Subsequently, a light-emitting diode, one kind of semiconductor
light-emitting devices, was fabricated by the use of the epitaxial
wafer having the epitaxial layer construction superposed on the
sapphire substrate. On the, surface of the Mg-doped GaN layer of
the produced wafer, a p electrode bonding pad composed of titanium,
aluminum and gold superposed sequentially in the order mentioned
from the surface side and a transparent p electrode formed solely
of Au and joined thereto were formed by the well-known technique of
photolithography to give rise to a p-side electrode.
Further, the wafer was subsequently subjected to dry etching-so as
to expose the part of the high Si-doped GaN layer that formed the
n-side electrode. On the exposed part, an n electrode formed of
four layers of Ni, Al, Ti and Au was produced.
In the wafer that had the p-side and n-side electrodes formed as
described above, an LED lamp having a construction shown in FIG. 4
was fabricated by the following procedure. The back surface of the
sapphire substrate was ground to a thickness of 100 .mu.m to form a
mirror-like surface. Subsequently, the wafer was cut into chips in
the shape of the square of 350 .mu.m. The chip was bonded onto a
sub-mount 34 in a mount cup 35, with the semiconductor 33 and
electrode on the lower side, and connected to a lead frame from the
electrode terminal on the sub-mount 34 to give birth to a flip tip
type light-emitting device. Further, the light-emitting device was
sealed with silicone resin 31 in a substantially hemispherical
shape to fabricate an LED lamp resembling a cannonball as
illustrated in FIG. 4.
When an electric current of 20 mA was passed in the forward
direction between the p-side and n-side electrodes of the LED lamp
thus fabricated, the wavelength of the emitted light was found to
be 380 nm, the output value 14.0 mW, and the forward-direction
voltage 3.4 V.
The LED chip not yet sealed with the resin was exposed to the flow
of electric current. When the surface of this electrified chip was
observed under an optical microscope, it was found to emit
throughout the entire surface thereof a ray of discernible yellow
light that seemed to be light emission between the deep levels of
GaN. In this light emission, the presence of a linear portion of
strong intensity of emission in the sapphire <1-100>
direction was confirmed.
COMPARATIVE EXAMPLE
In the present Comparative Example, an LED was fabricated by
following the procedure of Example 1 substantially wholly while
allowing the sapphire surface to remain in a flat state.
An LED lamp shaped like a cannonball was manufactured, similarly to
the LED lamp of Example 1, by using a sapphire substrate having a
flat surface and an LED grade epitaxial wafer grown by the same
method as in Example 1. This LED lamp, when exposed to an electric
current of 20 mA, was found to emit light having a wavelength of
380 nm and an output value of 7.8 mW. The LED lamp of Example 1 was
confirmed to have an output 1.8 times the output of the LED lamp of
this Comparative Example.
EXAMPLE 2
In Example 2, a sapphire substrate provided with an AlN film having
a (0001) plane as the surface thereof and measuring 1 .mu.m in
thickness was used. By subjecting this substrate to a high
temperature processing in a reducing atmosphere at 1400.degree. C.,
pits shaped like hexagonal cones and indeterminate irregularities
were formed on the AlN surface. The pits measured approximately 0.5
to 2 .mu.m in diameter and part of them in larger sizes had the
bottom surfaces thereof reach the sapphire substrate and some if
not all of them assumed the shape of a hexagonal trapezoid. The
ratio of the area occupied by the pits and the indeterminate
irregularities to the area occupied by the flat part, was
approximately in the range of 1:0.2 to 1:4. The inclined surfaces
of the hexagonal cones were divided into two kinds, the one kind
having (11 22) planes of AlN and the other having (1 102) planes
thereof. The angles .theta. formed between the inclined surfaces of
the hexagonal cones and the flat surface of the substrate were
58.degree. and 43.degree., respectively.
The sapphire substrate furnished with the AlN film having the pits
formed thereon as described above was thoroughly washed, placed in
a MOCVD device and processed therein in the same manner as in
Example 1 to fabricate an epitaxial wafer for use in an LED.
An LED lamp shaped like a cannonball was produced in the same
manner as in Example 1 by using the LED grade epitaxial wafer grown
by the method described above. This LED lamp, when exposed to the
flow of electricity of 20 mA, emitted light having a wavelength of
380 nm and an output value of 12.6 mW. This output represented an
increase to 1.6 times that of the Comparative Example.
When the surface of the LED was observed under an optical
microscope while the LED was being exposed to the flow of
electricity, it was found to emit throughout the entire surface
thereof a ray of discernible yellow light that seemed to be light
emission between the deep levels of GaN. In the area of this light
emission, the presence of hexagonal bright spots of strong emission
intensity was observed.
EXAMPLE 3
In Example 3, a sapphire substrate having a (0001) plane as the
surface thereof was used. On this substrate, was formed a mask for
selective growth that was formed of SiN film in the shape of
stripes running parallel to the <1-100> direction of sapphire
and measured 2 .mu.m in line width and 2 .mu.m in space width. The
substrate covered with the mask was thoroughly washed and then
placed in a MOCVD device. Then, as the first step, a gas containing
the vapor of trimethyl aluminum (TMAl) was passed through the
device at an elevated temperature and, as the second step, TMAl and
ammonia were passed through the device to induce growth of stripes
of aluminum nitride having a triangular cross section. The
irregularities thus formed on the substrate were flattened with a
gallium nitride layer. The substrate was then processed to produce
an LED construction.
The manufacture of a sample incorporating the aforementioned AlN
layer was carried out by the following procedure using the MOCVD
method. First, a sapphire substrate was introduced into a reaction
furnace made of quartz and installed in an RF coil of an induction
heater. The sapphire substrate was mounted on a susceptor made of
carbon and intended for heating in a glove box that had undergone
displacement with nitrogen gas. After the introduction of the
sample, the reaction furnace had the interior thereof purged by
passing nitrogen gas.
After the flow of nitrogen gas was continued over a period of ten
minutes, the induction heater was put to operation so as to elevate
the temperature of the substrate to 600.degree. C. over a period of
ten minutes. The substrate, with the temperature thereof kept
unchanged at 600.degree. C., was left standing for nine minutes
while the flow of hydrogen gas was continuing. In the meanwhile,
the hydrogen carrier gas was supplied to the piping for the
container (bubbler) holding trimethyl gallium (TMGa) as a raw
material and to the piping for the container (bubbler) holding
trimethyl aluminum (TMAl) as a raw material, both connected to the
reaction furnace so as to start bubbling. The temperatures of the
bubblers were adjusted in advance to respectively fixed levels by
the use of a constant temperature bath intended to adjust
temperature. The vapors of TMGa and TMAl generated by the bubbling
and the carrier gas were supplied together to the piping for the
removal device till the step for growth began, and they were
released via the removal device to the exterior of the system.
Thereafter, the valve for the nitrogen carrier gas was closed and
the supply of hydrogen gas to the interior of the reaction furnace
was started.
After the carrier gas was switched, the temperature of the
substrate was elevated to 1150.degree. C. After the stabilization
of the temperature at 1150.degree. C. was confirmed, the valve in
the piping for TMAl was switched so as to supply the gas containing
the vapor of TMAl into the reaction furnace. It is surmised that at
this time, a small amount of nitrogen was supplied together with
TMAl owing to the decomposition of the deposit adhering to the wall
and ceiling of the reaction furnace. After the treatment that was
performed for nine minutes, the valve in the piping for TMAl was
switched so as to stop the supply of the gas containing the vapor
of TMAl into the reaction furnace. The reaction furnace in the
ensuing state was retained unchanged for three minutes.
After the annealing which was continued for three minutes, the
valve in the piping for ammonia gas was switched so as to start the
supply of ammonia gas into the furnace. The flow of ammonia was
retained unchanged for four minutes. In this while, the flow volume
through the piping for TMAl was adjusted with a flow volume
adjuster. After the elapse of four minutes thence, the valve for
TMAl was switched so as to start the supply of TMAl into the
furnace and induce growth of AlN.
The growth of the AlN layer was continued over a period of about
three hours. When the sample withdrawn from the furnace at this
stage was visually examined, it was found to have formed AlN
irregularities of a triangular cross section having the apex
thereof reach the surface of sapphire exposed in the pattern of
stripes. At this stage, the SiN mask was embedded with the AlN. The
inclined surfaces of the irregularities were (1-102) planes of AlN
forming an angle of 43.degree. with the flat surface of the
substrate. Subsequently, the valve in the piping for TMAl was
switched so as to terminate the supply of the raw material to the
reaction furnace and stop the growth.
After the growth of the AlN layer was terminated, the growth of the
GaN layer was continued. The growth was continued for three hours
to flatten the grown surface of the GaN layer. Then, an n-type
layer, a light-emitting layer and a p-type layer were sequentially
superposed thereon in the order mentioned to give rise to an
epitaxial wafer for use in an LED.
An LED lamp of the shape of a cannonball was manufactured in the
same manner as in Example 1 by using the LED grade epitaxial wafer
grown by the method described above. This LED lamp, when exposed to
the flow of an electric current of 20 mA, emitted light having a
wavelength of 380 nm and an output value of 14.8 mW. This output
represented an increase of output to 1.9 times the output obtained
in the Comparative Example.
When the surface of the LED (sapphire surface) was observed under
an optical microscope while the LED was being exposed to the flow
of electricity, it was found to emit throughout the entire surface
thereof a ray of discernible yellow light which seemed to be light
emission between the deep levels of GaN. In the area of this light
emission, a portion of thick bright lines of strong intensity of
emission in the shape of stripes and a portion of weak thin dark
lines were observed.
Since the use of the light-emitting device of this invention
results in increasing the efficiency of fetching light roughly to
twice the ordinary level at most, this light-emitting device can
also exalt the output of light emission and the efficiency of
electricity-light conversion of the LED to about twice the ordinary
levels at most. This fact not merely contributes to the saving of
energy but also represses the emission of heat from the device due
to re-absorption of light and improves the stable operation and
service life of the LED.
* * * * *