U.S. patent number 6,920,272 [Application Number 10/463,473] was granted by the patent office on 2005-07-19 for monolithic tunable lasers and reflectors.
This patent grant is currently assigned to NanoOpto Corporation. Invention is credited to Jian Wang.
United States Patent |
6,920,272 |
Wang |
July 19, 2005 |
Monolithic tunable lasers and reflectors
Abstract
A wavelength tunable device for operating on at least a portion
of energy propagating through a waveguide is disclosed. The
wavelength tunable device includes an upper cladding and a lower
cladding having a core substantially disposed there between and
suitable for optically coupling to the waveguide, a pattern of
nanostructures positioned substantially on the upper cladding
distal to the core so as to define a reflectivity for energy
propagating through the waveguide, and, a movable membrane aligned
with the pattern of nanostructures so as to at least partially
define a gap there between. This gap may be selectively controlled
upon actuation of the movable membrane so as to cause a
corresponding change in the reflectivity.
Inventors: |
Wang; Jian (Orefield, PA) |
Assignee: |
NanoOpto Corporation (Somerset,
NJ)
|
Family
ID: |
32073440 |
Appl.
No.: |
10/463,473 |
Filed: |
June 17, 2003 |
Current U.S.
Class: |
385/129;
359/332 |
Current CPC
Class: |
G02B
6/12004 (20130101); G02B 6/12007 (20130101); G02B
6/124 (20130101); G02B 6/29395 (20130101); H01S
5/026 (20130101); H01S 5/0607 (20130101); H01S
5/125 (20130101); G02B 2006/12107 (20130101); G02B
2006/12109 (20130101) |
Current International
Class: |
G02B
6/12 (20060101); G02B 6/34 (20060101); G02B
006/10 () |
Field of
Search: |
;385/123,129-131,140 |
References Cited
[Referenced By]
U.S. Patent Documents
Other References
Austin, M., et al., "Fabrication for nanocontacts for molecular
devices using nanoimprint lithography," J. Vac. Sci. Technol. B
20(2), Mar./Apr. 2002, pp. 665-667. .
Austin, M., et al., "Fabrication of 70nm channel length polymer
organic thin-film transistors using nanoimprint lithography," Appl.
Phys. Lett. 81 (23), Dec. 2, 2002, pp. 4431-4433. .
Bird, G.R. et al., "The Wire Grid as a Near-Infrafed Polarizer," J.
of the Optical Soc. of America, 50 (9), 886-890, (1960). .
Born, Max, and Wolf, Emil: Principles of Optics: Electromagnetic
Theory of Propagation, Interference and Diffraction of Light 7th
ed. Oct. 1, 1999, Cambridge University Press. p. 790. .
Brundrett, D. L.., et al., "Normal-incidence guided-mode resonant
grating filters: design and experimental demonstration" Optics
Lett., May 1, 1998;23(9):700-702. .
Cao, H., et al., "Fabrication of 10 nm enclosed nanofluidic
channels," Appl. Phys. Lett. 81 (1), Jul. 1, 2002, pp. 174-176.
.
Cao, H., et al., "Gradient Nanostructures for interfacing
microfluidics and nanofluidics," Appl. Phys. Lett. 81(16), Oct. 14,
2002, pp. 3058-3060. .
Chang, Allan S. P., et al. "A new two-dimensional subwavelength
resonant grating filter fabricated by nanoimprint lithography"
Department of Electrical Engineering, NanoStructures Laboratory,
Princeton University. .
Chigrin, D. N.,et al., "Observation of total omnidirectional
reflection from a one-dimensional dielectric lattice" Appl. Phy. A.
1999;68:25-28. .
Chou, S. Y., et al., "Subwavelength transmission gratings and their
applications in VCSELs" Proc. SPIE. 1997;3290:73-81. .
Chou, S. Y., et al., "Observation of Electron Velocity Overshoot in
Sub-100-nm-channel MOSFET's in Silicon," IEEE Electron Device
Letters, vol. EDL-6, No. 12, Dec. 1985, pp. 665-667. .
Chou, S.Y., et al., "Imprint Lithography with 25-Nanometer
Resolution" Apr. 5, 1996;272(5258):85-87. .
Chou, S.Y., et al., "Sub-10 nm imprint lithography and
applications" J. Vac. Sci. Technol. B. 1997
Nov./Dec.;15(6):2897-2904. .
Chou, S., et al., "Imprint of sub-25 nm vias and trenches in
polymers," Appl. Phys., Lett. 67 (21), Nov. 20, 1995, pp.
3114-3116. .
Chou, S., et al., "Lateral Resonant Tunneling Transistors Employing
Field-Induced Quantum Wells and Barriers," Proceedings of the IEEE,
vol. 79, No. 8, Aug. 1991, pp. 1131-1139. .
Chou, S., et al., "Nanoscale Tera-Hertz Metal-Semiconductor-Metal
Photodetectors," IEEE Journal of Quantum Electronics, vol. 28, No.
10, Oct. 1992, pp. 2358-2368. .
Chou, S., et al., "Ultrafast and direct imprint of nanostructures
in silicon," Nature, vol. 417, Jun. 20, 2002, pp. 835-837. .
Chou, S., G.A., "Patterned Magnetic Nanostructures and Quantized
Magnetic Disks," Proceedings of the IEEE, vol. 85, No. 4, Apr.
1997, pp. 652-671. .
Cui, B., et al., "Perpendicular quantized magnetic disks with 45
Gbits on a 4 x 2 cm.sup.2 area," Journal of Applied Physics, vol.
85, No. 8, Apr. 15, 1999, pp. 5534-5536. .
Deshpande, P., et al., "Lithographically induced self-assembly of
microstructures with a liquid-filled gap between the mask and
polymer surface," J. Vac. Sci. Technol. B 19(6), Nov./Dec. 2001,
pp. 2741-2744. .
Deshpande, P., et al., "Observation of dynamic behavior
lithographically induced self-assembly of supromolecular periodic
pillar arrays in a homopolymer film," Appl. Phys. Lett. 79 (11),
Sep. 10, 2001, pp. 1688-1690. .
Fan, S., et al., "Design of three-dimensional photonic crystals at
submicron lengthscales" Appl. Phys. Lett. Sep.
12,1994;65(11)1466-1468. .
Feiertag, G., et al., "Fabrication of photonic crystals by deep
x-ray lithography" Appl. Phys. Lett., Sep. 15,
1997;71(11):1441-1443. .
Fink, Y., et al, "Guiding optical light in air using an
all-dielectric structure" J. Lightwave Techn. Nov.
1999;17(11):2039-2041. .
Fink, Y., et al, "A dielectric omnidirectional reflector" Science.
Nov. 27, 1998;282:1679-1682. .
Fischer, P.B., et al., "10 nm electron beam lithography and sub-50
nm overlay using a modified scanning electron microscope," Appl.
Phys. Lett. 62 (23), Jun. 7, 1993, pp. 2989-2991. .
Flanders, D.C., "Submicrometer periodicity gratings as artificial
anisotropic dielectrics," Appl. Phys. Lett. 42 (6), 492-494 (1983).
.
Gabathuler, W., et al., "Electro-nanomechanically
wavelength-tunable integrated-optical bragg reflectors Part II:
Stable device operation" Optics Communications. Jan. 1,
1998;145:258-264. .
Gaylord, Thomas K., et al., "Analysis and applications of optical
diffraction by gratings," Proc. IEEE. May 1985; 73(5):894-937.
.
Goeman, S., et al., "First demonstration of highly reflective and
highly polarization selective diffraction gratings (GIRO-Gratings)
for long-wavelength VCSEL's" IEEE Photon. Technol. Lett. Sep.
1998;10(9):1205-1207. .
Hayakawa, Tomokazu, et al, "ARROW-B Type Polarization Splitter with
Asymmetric Y-Branch Fabricated by a Self-Alignment Process," J.
Lightwave Techn, 15(7), 1165-1170, (1997). .
Hereth, R., et al, "Broad-band optical directional couplers and
polarization splitter," J. Lightwave Techn., 7(6), 925-930, (1989).
.
Ho, K.M., et al., "Existance of a photonic gap in periodic
dielectric structures" Dec. 17, 1990;65(25);3152-3155. .
Ibanescu, M., et al., "An all-dielectric coaxial waveguide"
Science. Jul. 21, 2000:289:415-419. .
Joannopoulos, J.D., et al., "Photonic crystals: putting a new twist
on light" Nature. Mar. 13, 1997(6621):143-149. .
Kokubun, Y., et al, "Arrow-Type Polarizer Utilizing Form
Birefringence in Multilayer First Cladding," IEEE Photon. Techn.
Lett., 11(9), 1418-1420, (1993). .
Kuksenkov, D. V., et al., "Polarization related properties of
vertical-cavity surface-emitting lasers" IEEE J. of Selected Topics
in Quantum Electronics. Apr. 1997;3(2):390-395. .
Levi, B.G., "Visible progress made in three-dimensional photonic
'crystals" Physics Today, Jan. 1999;52(1):17-19. .
Li, M., et al., "Direct three-dimensional patterning using
nanoimprint lithography," Appl. Phys. Lett. 78 (21), May 21, 2001,
pp. 3322-3324. .
Li, M., et al., "Fabrication of circular optical structures with a
20 nm minimum feature using nanoimprint lithography," Appl. Phys.
Lett. 76 (6), Feb. 7, 2000, pp. 673-675. .
Magel, G.A., "Integrated optic devices using micromachined metal
membranes" SPIE. Jan. 1996;2686:54-63. .
Magnusson, R., et al., "New principle for optical filters" Appl.
Phys. Lett. Aug. 31, 1992;61(9):1022-1023. .
Mashev, L., et al., "Zero order anomaly of dielectric coated
gratings" Optics Communications. Oct. 15, 1985; 55(6):377-380.
.
Moharam, M. G., et al., "Rigorous coupled-wave analysis of
planar-grating diffraction" J. Opt. Soc. Am. Jul.
1981;71(7):811-818. .
Mukaihara, T., et al., "Engineered polarization control of
GaAs/AlGaAs surface emitting lasers by anisotropic stress from
elliptical etched substrate hole" IEEE Photon. Technol. Lett. Feb.
1993;5(2);133-135. .
Noda, S., et al., "New realization method for three-dimensional
photonic crystal in optical wavelength region" Jpn. J. Appl. Phys.
Jul. 15, 1996;35:L909-L912. .
Oh, M., et al., "Polymeric waveguide polarization splitter with a
buried birefringent polymer" IEEE Photon. Techn. Lett. Sep.
1999;11(9);1144-1146. .
Painter, O., et al., "Lithographic tuning of a two-dimensional
photonic crystal laser array" IEEE Photon. Techn. Lett., Sep.
2000;12(9):1126-1128. .
Painter, O., et al., "Room temperature photonic crystal defect
lasers at near-infrared wavelengths in InGaAsP" J. Lightwave
Techn., Nov. 1999.;17(11):2082-2088. .
Peng, S., et al., "Experimental demonstration of resonant anomalies
in diffraction from two-dimensional gratings" Optical Lett. Apr.
15, 1996;21(8):549-551. .
Ripin, D. J., et al., "One-dimensional photonic bandgap
microcavities for strong optical confinement in GaAs and GaAs/AlxOy
semiconductor waveguides" J. Lightwave Techn. Nov. 1999;
17(11):2152-2160. .
Rokhinson, L.P., et al., "Double-dot charge transport in Si
single-electron/hole transistors," Appl. Phys. Lett. 76 (12), Mar.
20, 2000, pp. 1591-1593. .
Rokhinson, L.P., et al., "Kondo-like zero-bias anomaly in
electronic transport through an ultrasmall Si quantum dot,"
Physical Review B, vol. 60, No. 24, Dec. 15, 1999, pp. 319-321.
.
Rokhinson, L.P., et al., "Magnetically Induced Reconstruction of
the Ground State in a Few-Electron Si Quantum Dot," Physical Review
Letters, vol. 87, No. 16, Oct. 15, 2001, pp. 1-3. .
Rudin, A., et al., "Charge-ring model for the charge-induced
confinement enhancement in stacked quantum-dot transistors," Appl.
Phys. Lett. 73(23), Dec. 7, 1998, pp. 3429-3431. .
Russell, P. St. J., et al., "Full photonic bandgaps and spontaneous
emission control in 1D multilayer dielectric structures" Opt.
Commun. Feb. 1, 1999;160:66-71. .
Rytov, S. M., "Electromagnetic properties of a finely stratified
medium" Soviet Physics JETP (Journal of Experimental &
Theoretical Physics). May 1956;2(1):466-475. .
Schablitsky, S., et al., "Controlling polarization of
vertical-cavity surface-emitting lasers using amorphous silicon
subwavelength transmission gratings," Appl. Phys. Lett. 69 (1),
Jul. 1, 1996, pp. 7-9. .
Sharon, A., et al., "Narrow spectral bandwidths with grating
waveguide structures" Appl. Phys. Lett. Dec. 30,
1996;69(27):4154-4156. .
Sugimoto, Y., et al., "Experimental verification of guided modes in
60 degrees -bent defect waveguides in AlGaAs-based air-bridge-type
two-dimensional photonic crystal slabs" J. Appl. Phys. Mar. 1,
2002; 91(5):3477-3479. .
Sun, X., et al., "Multilayer resist methods for nanoimprint
lithography on nonflat surfaces" J. Vac. Sci. Technol. B. Nov./Dec.
1998;16(6)3922-3925. .
Tibuleac, S., et al., "Reflection and transmission guided-mode
resonance filters" J. Opt. Soc. Am. A. Jul. 1997:14(7):1617-1626.
.
Trutschel, U., et al, "Polarization splitter based on anti-resonant
reflecting optical waveguides," J Lightwave Techn., 13(2), 239-243,
(1995). .
Tyan, R.C., et al., "Design, fabrication and characterization of
form-birefringent multilayer polarizing beam splitter" J. Opt. Soc.
Am. A. Jul. 1997;14(7):1627-1636. .
Tyan, R. et al., "Polarizing beam splitters constructed of
form-birefringent multilayer gratings," SPIE 2689, 82-89. .
van Blaaderenm, Alfons, "Opals in a New Light" Science. Oct. 30,
1998;282(5390):887-888. .
van Doorn, A. K. Jansen, et al., "Strain-induced birefringence in
vertical-cavity semiconductor lasers" IEEE J. Quantum Electronics.
Apr. 1998:34(4):700-706. .
Vellekoop, A.R. et al, "A small-size polarization splitter based on
a planar phase optical phased array," J Lightwave Techn., 8(1),
118-124, (1990). .
Wang, J., et al., "Molecular alignment in submicron patterned
polymer matrix using nano-imprint lithography," Appl. Phys. Lett.
77 (2), Jul. 10, 2000, pp. 166-168. .
Wang, J., et al., "Fabrication of a new broadband waveguide
polarizer with a double-layer 190 nm period metal-gratings using
nanoimprint lithography" J. Vac. Sci. Technol. B. Nov. Dec.
1999:17(6):2957-2960. .
Wang, S. S., et al., "Design of waveguide-grating filters with
symmetrical line shapes and low sidebands" Opt. Lett. Jun. 15,
1994;19(12):919-921. .
Wang, S. S., et al., "Guided-mode resonances in planar
dielectric-layer diffraction gratings" J. Opt. Soc. Am. A. Aug.
1990;7(8):1470-1475. .
Weber, M. F., Stover, C.A., Gilbert, L.R., Nevitt, T.J., Ouderkirk,
A.J. "Giant birfringent optics in multilayer polymer mirrors,"
Science, 287, 2451-2456, Mar. 31, 2000. .
Winn, J. N., et al., "Omnidirectional reflection from a
one-dimensional photonic crystal" Opt. Lett. Oct. 15,
1998;23(20):1573-1575. .
Wu., L., et al., "Dynamic modeling and scaling of nanostructure
formation in the lithographically induced self-assembly and
self-construction" Appl. Phys. Lett. 2003 May 12,
2003;82(19):3200-3202. .
Yablonovitch, E., "Inhibited spontaneous emission in solild-state
physics and electronics" Phys. Rev. Lett. May 18,
1987;58(20):2059-2062. .
Yablonovitch, E., et al., "Photonic band structure: The
face-centered-cubic case employing nonspherical atoms" Phys. Rev.
Lett. Oct. 21, 1991; 67(17):2295-2298. .
Yanagawa, H., et al,, "High extinction guided-wave optical
polarization splitter," IEEE Photon. Techn. Lett., 3(1), 17-18,
(1991). .
Yoshikawa, T., et al., "Polarization-controlled single-mode VCSEL"
IEEE J. Quantum Electronics. Jun. 1998;34(6):1009-1015. .
Yu, Z., et al., "Reflective polarizer based on a stacked
double-layer subwavelength metal grating structure fabricated using
nanoimprint lithography," Appl. Phys. Lett. 77 (7), Aug. 14, 2000,
pp. 927-929. .
Zakhidov, A.A., et al., "Carbon structures with three-dimensional
periodicity at optical wavelengths" Science. Oct. 30, 1998;
282(5390):897-901..
|
Primary Examiner: Ullah; Akm Enayet
Assistant Examiner: Doan; Jennifer
Attorney, Agent or Firm: Reed Smith LLP
Parent Case Text
CROSS REFERENCE TO RELATED APPLICATIONS
This application claims the benefit of U.S. Provisional Application
No. 60/417,230, filed Oct. 9, 2002, entitled "MONOLITHIC TUNABLE
LASERS AND REFLECTORS", with the named inventor Jian Wang.
Claims
What is claimed is:
1. A wavelength tunable active device for operating on at least a
portion of energy propagating through a waveguide, said device
comprising: an upper cladding and a lower cladding having a core
substantially disposed there between and suitable for being
optically coupled to said waveguide; a pattern of nanostructures
positioned substantially on said upper cladding distal to said core
so as to define a reflectivity for energy propagating through said
waveguide; and, a movable membrane aligned with said pattern of
nanostructures so as to at least partially define a gap there
between; wherein, said gap may be selectively controlled upon
actuation of said movable membrane so as to cause a corresponding
change in said reflectivity.
2. The device of claim 1, wherein said pattern of nanostructures
comprises a periodic structure of nanostructures.
3. The device of claim 1, wherein said pattern of nanostructures is
formed substantially from at least one of Si, InP, and GaAs.
4. The device of claim 1, wherein said pattern of nanostructures
includes at least one pattern selected from the group consisting of
holes, strips, trenches and pillars.
5. The device of claim 4, wherein said pattern has a common
period.
6. The device of claim 1, wherein said pattern of nanostructures is
one-dimensional.
7. The device of claim 1, wherein said pattern of nanostructures is
two-dimensional.
8. The device of claim 1, wherein said pattern of nanostructures is
formed of materials wherein the refractive index of said pattern of
nanostructures is greater than the refractive index of said upper
cladding.
9. The device of claim 1, wherein said upper cladding is formed
substantially of at least one of SiO.sub.2 and InP.
10. The device of claim 1, wherein said lower cladding is formed of
substantially InP or SiO.sub.2.
11. The device of claim 1, wherein said core is formed
substantially of at least one of SiN and InGaAs.
12. The device of claim 1, wherein said movable membrane is a
microelectromechanical system.
13. The device of claim 1, wherein said movable membrane is formed
of substantially at least one of the group consisting of SiN, Si
and SiO.sub.2.
14. The device of claim 1, wherein the size of said gap is within
the range 0.01 um to 1 um.
15. The device of claim 14, wherein the size of the gap is
substantially 0.3 um.
16. The device of claim 1, wherein control of the size of gap by
electro-mechanically actuating said movable membrane provides for
wavelength selection of the device.
17. A monolithic tunable optical energy source suitable for
emitting energy having at least one wavelength, said source
comprising: a gain portion suitable for amplifying said energy to
be emitted; at least a first reflector suitable for substantially
reflecting the at least one wavelength comprising an upper cladding
and a lower cladding having a core substantially disposed there
between; a pattern of nanostructures positioned substantially on
said upper cladding distal to said core so as to define a
reflectivity for propagating energy; and, a movable membrane
aligned with said pattern of nanostructures so as to at least
partially define a gap there between; wherein, said gap may be
selectively controlled upon actuation of said movable membrane so
as to cause a corresponding change in said reflectivity; and, a
waveguide portion substantially optically coupling said first
reflector with said gain portion.
18. The source of claim 17, further comprising a second reflector
located adjacent to said gain portion distal from said first
reflector.
19. The source of claim 18, wherein said second reflector reflects
a first portion of the propagating energy back through said gain
portion and transmits a second portion of the propagating
energy.
20. The source of claim 19, wherein said transmitted second portion
is approximately one percent of the propagating energy.
21. The source of claim 17, wherein said gain portion is of the
form of a Type III-V semiconductor compound.
22. The source of claim 21 wherein said gain portion is formed
substantially of at least one of GaAs and InGaAsP.
23. The source of claim 17 wherein said gain portion operates to
maintain more excited or pumped atoms in higher energy levels than
atoms existing in the lower energy levels.
24. The source of claim 23, wherein said gain portion is energized
by energy of a wavelength selected by said first reflector and
propagating through said gain portion.
25. The source of claim 23, wherein a second reflector is optically
coupled with said first reflector thereby creating an energy
oscillator.
26. The source of claim 25, wherein said second reflector transmits
a portion of the propagating energy, thereby creating a laser
emission of the wavelength selected by said first reflector.
27. The source of claim 25, wherein said second reflector and said
first reflector are substantially associated with the wavelength of
the oscillating energy.
28. The source of claim 27, wherein said second reflector transmits
a portion of the propagating energy, thereby creating a laser
emission of the wavelength selected by said first reflector and
said second reflector.
29. A waveguide module suitable for interacting with input energy
propagation utilizing a wavelength tunable device, the waveguide
module comprising: a waveguide wavelength demultiplexer suitable
for dividing the energy propagation into parts, each part
comprising approximately an equal wavelength portion of said energy
propagation; and, a plurality of reflectors suitable for
interacting with the divided energy propagation, each reflector
comprising an upper cladding and a lower cladding having a core
substantially disposed there between and suitable for being
optically coupled to said waveguide wavelength demultiplexer; a
pattern of nanostructures positioned substantially on said upper
cladding distal to said core so as to define a reflectivity for the
energy propagating through said waveguide wavelength demultiplexer;
and, a movable membrane aligned with said pattern of nanostructures
so as to at least partially define a gap there between; wherein,
said gap may be selectively controlled upon actuation of said
movable membrane so as to cause a corresponding change in said
reflectivity, suitable for determining the add/drop characteristics
of operating wavelength portion.
30. The module of claim 29, further comprising a circulator
optically coupled to said waveguide wavelength demultiplexer, said
circulator being suitable for input and output coupling.
31. The module of claim 30, wherein said circulator comprises a
number of ports identified in a specific sequence, and wherein said
circulator substantially outputs energy input through one port
through the next port in the sequence.
32. The module of claim 29, wherein said waveguide wavelength
demultiplexer includes an arrayed waveguide grating.
33. The module of claim 29, wherein said waveguide wavelength
demultiplexer includes an echelle grating.
34. The module of claim 29, wherein said plurality of reflectors
includes at least one reflector suitable for use as a tunable
narrow-band reflective mirror.
35. The module of claim 29, wherein said plurality of reflectors
includes at least one reflector suitable for use as a tunable notch
filter.
36. The module of claim 29, wherein at least one of said plurality
of reflectors substantially transmits wavelengths to be dropped
from the module.
37. The module of claim 29, wherein at least one of said plurality
of reflectors substantially reflects wavelengths continuing to
propagate.
38. The module of claim 29, wherein at least one of said plurality
of reflectors is configured to transmit a previously substantially
unused wavelength, thereby injecting this wavelength into the
system.
39. The module of claim 29, wherein at least one of said plurality
of reflectors substantially operates as a variable optical
attenuator, the module thereby being suitable for use as a dynamic
gain equalization filter.
Description
FIELD OF THE INVENTION
The present invention relates generally to waveguides, and
particularly to monolithic tunable lasers and reflectors.
BACKGROUND OF THE INVENTION
In the field of optical networking, telecommunications, optical
applications and photonics it is highly desirable to continually
enhance device performance and reduce fabrication, packaging and
assembly costs. Accordingly, multi-functional photonic components
or photonic components exhibiting enhanced functionality are highly
desirable.
Super-grating distributed Bragg reflector tunable lasers and
sampled/chirped grating distributed Bragg reflector tunable lasers
both usually require special fabrication techniques to make the
distributed Bragg reflector gratings and usually require tuning
through carrier injection. Current and temperature tuned
distributed Bragg reflector tunable lasers and current and
temperature tuned fixed distributed feedback/distributed Bragg
reflector lasers usually have very small tuning ranges and
difficult are to maintain.
Therefore, the need exists to have a monolithic tunable laser
providing a larger tunable range and standard fabrication
techniques.
SUMMARY OF THE INVENTION
A wavelength tunable device for operating on at least a portion of
energy propagating through a waveguide is disclosed. The device
includes an upper cladding and a lower cladding having a core
substantially disposed there between and suitable for being
optically coupled to the waveguide, a pattern of nanostructures
positioned substantially on the upper cladding distal to the core
so as to define a reflectivity for energy propagating through the
waveguide, and a movable membrane aligned with the pattern of
nanostructures so as to at least partially define a gap there
between. The gap may be selectively controlled upon actuation of
said movable membrane so as to cause a corresponding change in said
reflectivity.
A monolithic tunable optical energy source suitable for emitting
energy having at least one wavelength is also disclosed. The source
includes a gain portion suitable for amplifying the energy to be
emitted, at least a first reflector suitable for substantially
reflecting the at least one wavelength including an upper cladding
and a lower cladding having a core substantially disposed there
between; a pattern of nanostructures positioned substantially on
the upper cladding distal to said core so as to define a
reflectivity for propagating energy; and a movable membrane aligned
with the pattern of nanostructures so as to at least partially
define a gap there between, wherein, the gap may be selectively
controlled upon actuation of the movable membrane so as to cause a
corresponding change in the reflectivity, and a waveguide portion
substantially optically coupling the first reflector with the gain
portion.
A waveguide module suitable for interacting with input energy
propagation utilizing a wavelength tunable device is also
disclosed. The waveguide module includes a waveguide wavelength
demultiplexer suitable for dividing the energy propagation into
parts, each part comprising approximately an equal wavelength
portion of the energy propagation, and a plurality of reflectors
suitable for interacting with the divided energy propagation, each
reflector comprising an upper cladding and a lower cladding having
a core substantially disposed there between and suitable for being
optically coupled to the waveguide wavelength demultiplexer, a
pattern of nanostructures positioned substantially on the upper
cladding distal to said core so as to define a reflectivity for the
energy propagating through the waveguide wavelength demultiplexer,
and a movable membrane aligned with the pattern of nanostructures
so as to at least partially define a gap there between, wherein the
gap may be selectively controlled upon actuation of said movable
membrane so as to cause a corresponding change in said
reflectivity, thereby determining the add/drop characteristics of
operating wavelength portion.
BRIEF DESCRIPTION OF THE FIGURES
Understanding of the present invention will be facilitated by
consideration of the following detailed description of the
preferred embodiments of the present invention taken in conjunction
with the accompanying drawings, in which like numerals refer to
like parts:
FIG. 1 illustrates a block representation of a tunable integrated
Bragg reflector;
FIG. 2 illustrates a block representation of a monolithic tunable
laser incorporating the tunable distributed Bragg reflector shown
in FIG. 1; and,
FIG. 3 illustrates a block representation of a waveguide add/drop
module utilizing a tunable integrated Bragg reflector shown in FIG.
1.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
It is to be understood that the figures and descriptions of the
present invention have been simplified to illustrate elements that
are relevant for a clear understanding of the present invention,
while eliminating, for the purpose of clarity, many other elements
found in typical photonic components and methods of manufacturing
the same. Those of ordinary skill in the art will recognize that
other elements and/or steps are desirable and/or required in
implementing the present invention. However, because such elements
and steps are well known in the art, and because they do not
facilitate a better understanding of the present invention, a
discussion of such elements and steps is not provided herein. The
disclosure herein is directed to all such variations and
modifications to such elements and methods known to those skilled
in the art.
Active devices are devices that operate on signals such as creating
emissions, filtering transmissions, balancing transmissions,
splitting transmissions, and adding or dropping transmissions, for
example. Passive devices are devices which are a transmission
medium such a planar waveguides and fibers, for example.
Referring now to FIG. 1, there is shown a tunable integrated Bragg
reflector 100. Tunable integrated Bragg reflector 100 may include
lower cladding layer 140 and upper cladding layer 120 and a core
130 therein between. A pattern of subwavelength elements, such as
nanoelements and nanostructures 110, may be formed in a surface of
upper cladding 120 substantially distal to core 130. A mechanically
controllable membrane 150 may be placed near the pattern of
nanostructures 110 with a gap 160 formed there between.
Pattern of nanostructures 110 may include multiple nanostructures
170 each having an element width F.sub.G and element height
D.sub.G. Pattern of nanostructures 110 may have a period of
nanostructures 170, X.sub.G. The filling ratio of pattern of
nanostructures 110, denoted F.sub.G /X.sub.G, is the ratio of the
width of a nanostructure F.sub.G to the overall period. Filling
ratio, F.sub.G /X.sub.G, may determine the operating wavelength of
device 10, as would be evident to one possessing an ordinary skill
in the pertinent arts.
Pattern of nanostructures 110 may be formed into or onto upper
cladding 120 using any suitable process for replicating, such as a
lithographic process. For example, nanoimprint lithography
consistent with that disclosed in U.S. Pat. No. 5,772,905, entitled
NANOIMPRINT LITHOGRAPHY, the entire disclosure of which is hereby
incorporated by reference as if being set forth in its entirety
herein may be used. This patent teaches a lithographic method for
creating ultra-fine nanostructure, such as sub 25 nm, patterns in a
thin film coated on a surface. For purposes of completeness, a mold
having at least one protruding feature may be pressed into the thin
film applied to upper cladding. The at least one protruding feature
in the mold creates at least one corresponding recess in the thin
film. After replicating, the mold may be removed from the film, and
the thin film processed such that the thin film in the at least one
recess may be removed, thereby exposing an underlying pattern or
set of devices. Thus, the patterns in the mold are replicated in
the thin film, and then the patterns replicated into the thin film
are transferred into the upper cladding 120 using a method known to
those possessing an ordinary skill in the pertinent arts, such as
reactive ion etching (RIE) or plasma etching, for example. Of
course, any suitable method for forming a structure into or onto an
operable surface, such as of upper cladding 120, may be utilized
though, such as photolithography, holographic lithography, e-beam
lithography, for example. Upper cladding 120 may take the form of
InP, GaAs, or SiO.sub.2 with a thin film of InGaAs, InGaAsP,
AlGaAs, or Si forming pattern of nanostructures 110.
As will be recognized by those possessing ordinary skill in the
pertinent arts, various patterns may be nanoimprinted onto upper
cladding 120. These patterns may serve various optical or photonic
functions. Such patterns may take the form of holes, strips,
trenches or pillars, for example, all of which may have a common
period or not, and may be of various heights and widths. The strips
may be of the form of rectangular grooves, for example, or
alternatively triangular or semicircular grooves. Similarly,
pillars, basically the inverse of holes, may be patterned. The
pillars may be patterned with a common period in both axes or
alternatively by varying the period in one or both axes. The
pillars may be shaped in the form of, for example, elevated steps,
rounded semi-circles, or triangles. The pillars may also be shaped
with one conic in one axis and another conic in the other.
According to an aspect of the present invention, an underlying
one-dimensional (1-D) pattern of nanostructures 110, preferably
formed of materials of having different reflective indices, may be
formed on upper cladding 120. This 1-D pattern may be of the form
of trenches, for example. According to an aspect of the present
invention, two-dimensional (2-D) pattern of nanostructures 110,
preferably formed of materials having different refractive indices,
may be formed on upper cladding 120. This 2-D pattern may be of the
form of pillars, for example.
Upper cladding 120, in combination, with lower cladding 140
envelops core 130. Upper cladding 120 may be substantially InP,
GaAs, or SiO.sub.2, for example. Lower cladding 140 may be
substantially InP, GaAs, or SiO.sub.2 for example. Core 130 may be
substantially InGaAs or SiN.
Mechanically controllable membrane 150, such as a
microelectromechanical system (MEMS) for example, may be placed in
close proximity to pattern of nanostructures 110 with gap 160
substantially there between. MEMS are integrated micro devices or
systems combining electrical and mechanical components, fabricated
using integrated circuit processing techniques and may range in
size from micrometers to millimeters. These systems may sense,
control and actuate on the micro scale, and may function
individually or in arrays to generate effects on the macro scale.
The use of MEMS is known those possessing an ordinary skill in the
pertinent arts.
In brief, a MEMS may include a base and a deflector. The base and
deflector may be made from materials as is known to those
possessing and ordinary skill in the pertinent arts, such as for
example, InP, GaAs, SiN, Si, or SiO.sub.2. The MEMS may operate
wherein an application of energy to the MEMS causes a longitudinal
deflection of the deflector with respect to the base. The
longitudinal displacement of the deflector from the base is
proportional to the energy applied to the MEMS.
Gap 160 may be created substantially between mechanically
controlled membrane 150 and pattern of nanostructures 110. Gap 160
may include a material such as air or nitrogen or may be a vacuum,
for example. The size of gap 160 may be in the range 0.1 um to 1
um, such as 0.3 um for example, which is the distance in the
longitudinal direction between mechanically controlled membrane 150
and pattern of nanostructures 110.
Controlling the size of gap 160 by electro-mechanically actuating
the deflector causes longitudinal displacement of the deflector
with respect to the base. This control creates a tunable
distributed Bragg reflector suitable for tunable wavelength
selection.
Referring now to FIG. 2, there is shown a monolithic tunable laser
200. Monolithic tunable laser 200 includes a gain portion 210, a
waveguide portion 220, a first reflector 230 and a second reflector
240. Gain portion 210 may be substantially optically coupled to
first reflector 230 by waveguide portion 220. Second reflector 240
may be optically coupled to gain portion 210 distal to waveguide
portion 220. Portion 210, 220, 230, 240 may be monolithically
formed on a common substrate, such as InP, GaAs, or Si for
example.
Gain portion 210, including for example a gain region, may include
a Type III-V compound semiconductor, such as for example InP or
GaAs. The performance and use of gain materials is known to those
possessing an ordinary skill in the pertinent arts. Briefly, gain
portion 210 may provide an area and configuration for population
inversion and stimulated emission. Gain portion 210 operates to
maintain more excited or pumped atoms in higher energy levels than
atoms existing in the lower energy levels.
Waveguide portion 220, including for example a waveguide region,
may be adapted to optically couple gain portion 210 to first
reflector 230. The use of waveguides for optical coupling is known
to those possessing an ordinary skill in the pertinent arts.
First reflector 230 may be designed to be tuned thereby selecting a
desired stimulated emission of device 200. First reflector 230 may
be a tunable integrated Bragg reflector 100 (FIG. 1), for example.
First reflector 230 provides an optical feedback device by
directing propagating energy back through gain portion 210.
Second reflector 240 may be adapted to provide simultaneous
reflection and transmission by providing a small amount of
transmission on the order of approximately 1% of the impinging
radiation. Substantially the remainder of the impinging radiation
may be reflected back through gain portion 210. Second reflector
240 may be designed as a tunable integrated Bragg reflector 100
(FIG. 1), for example, or alternatively may be designed to provide
broadband reflection/transmission characteristics, thereby allowing
first reflector 230 to be substantially determinative of the
operating emitting wavelength.
In operation, gain portion 210 may be energized thereby exciting
atoms from their lower state to one of several higher states.
Energy, photons for example, of a wavelength selected by at least
first reflector 230, and additionally, by second reflector 240,
radiating between first reflector 230 and second reflector 240 pass
through this population inverted portion thereby causing a
stimulated emission. Second reflector 240 transmits a portion of
the radiation incident upon it, thereby creating an emission of the
wavelength selected by at least first reflector 230, and
additionally, by second reflector 240.
Referring now to FIG. 3, there is shown a waveguide add/drop module
300 utilizing tunable distributed Bragg reflector 100. The
waveguide add/drop module 300 includes an optical fiber 310,
circulator 320 for input and output coupling, a waveguide
wavelength demultiplexer 330 and an array or plurality 340 of
tunable distributed Bragg reflectors 100.
Circulator 320 may have a number of ports identified in a specific
sequence. As in known to those possessing an ordinary skill in the
pertinent arts, circulator 320 operates by substantially outputting
energy input through one port through the next port in the
sequence. For example, light of a certain wavelength enters
circulator 320 through port x and exits through port x+1, while
light of another wavelength enters through port x+2 and exits
through x+3. For example, a circulator disclosed in U.S. Pat. No.
4,650,289, entitled OPTICAL CIRCULATOR, the entire disclosure of
which is hereby incorporated by reference as if being set forth in
its entirety herein may be used.
Waveguide wavelength demultiplexer 330 may be used to separate the
incoming input signal into constituent parts for use in add/drop
module 300. A multi-channel-input signal may be demultiplexed,
separated spatially into different waveguide branches based on
wavelength, for example. For example, if the incoming signal has a
wavelength range .lambda., the demultiplexer may separate the
signal into 6 equally sized branches, as may be seen in FIG. 3,
each branch including signal of wavelength range .lambda./6.
Demultiplexer 330 may take the form of an arrayed waveguide grating
or echelle grating, for example. Such an arrayed waveguide grating
or echelle grating combines and splits optical signals of different
wavelengths utilizing a number of arrayed channel waveguides that
act together like a diffraction grating offering high wavelength
resolution and attaining narrow wavelength channel spacing. After
being demultiplexed, each channel propagating a portion of the
overall wavelength range may be aligned with one tunable
distributed Bragg reflector 100 filter in an array 340 of
electrically tunable narrow-band waveguide distributed Bragg
reflector 100 filters.
Array 340 of tunable distributed Bragg reflectors 100 may include
individual tunable distributed Bragg reflectors 100 as shown in
FIG. 1 and discussed hereinabove. Each tunable distributed Bragg
reflector 100 may operate as a tunable narrow-band reflective
mirror and a tunable notch filter. When energy propagation reaches
tunable distributed Bragg reflector 100, by controlling
mechanically controllable membrane 150 aligned in one of the
tunable distributed Bragg reflector 100, such as a MEMs or other
suitable device, each may be configured according to whether the
channel is desired to be added or dropped. For example, if a
channel desiring to be dropped 350 is received at a filter 100,
that filter 100 may be configured so as to pass this channel's
signal, as a notch filter, for example. On the other hand, if the
channel contains a signal desired to continue to propagate 360,
i.e. not to be dropped, the filter will be configured so as to
reflect this channel's signal, a narrow-band reflective mirror.
Additionally, if a signal is desired to be added corresponding in
wavelength with a signal to be dropped 370, or a previously
substantially unused wavelength 380, this signal may be added by
passing through the corresponding filter used to drop a portion of
the signal. For either adding a previously unused wavelength or for
adding a previously dropped wavelength, filter 100 may be
configured so as to pass this signal to be added, as a notch
filter, for example. In the case of adding a signal corresponding
in wavelength to a signal to be dropped, filter 100 would already
be configured to pass the wavelength in order to effectuate the
signal drop discussed hereinabove. When the signal reaches filter
100, since filter 100 may be configured as a notch filter suitable
to pass the signal, the signal may be transmitted through filter
100, thereby entering the system and passing through to the
waveguide wavelength demultiplexer 330.
Wavelengths reflected or added at array 340 of tunable distributed
Bragg reflectors 100 propagate through waveguide wavelength
demultiplexer 330. Waveguide wavelength demultiplexer 330 operates
to combine this returning energy back into a single energy
propagation. This combined energy propagation propagates through to
circulator 320 and is outputted through fiber 310.
Further, if an electrically tunable narrow-band waveguide
distributed Bragg reflector 100 mirror/filter operates as a
variable optical attenuator or variable optical reflector, then the
above waveguide add/drop module 300 may be utilized as a dynamic
gain equalization filter. Dynamic gain equalization may be
necessary due to effects resulting from increasing bandwidth
causing channel powers to become unbalanced. Non-uniformity of
channel powers arises from non-linear effects such as Raman
scattering in a communicative fiber and the cumulative effects of
cascaded optical amplifiers. Further, in large systems, these
effects may be pronounced. If the channel power imbalance is not
mitigated, overall system performance may be degraded and service
reliability may be reduced. Dynamic equalization eliminates gain
tilt, gain shape changes, and accumulated spectral ripple that
occurs due to dynamic changes in optical networks. It permits
longer distance, higher bandwidth and light-path flexibility in
optical transmission links with less frequent O-E-O
regeneration.
Operatively, for example, the above waveguide add/drop module 300
may be configured, instead of substantially transmitting or
reflecting the incoming signal as described hereinabove, to
partially transmit and reflect the signal. By so doing, filter 100
may gain equalize the overall signal substantially equating the
signal in each band.
As would be known to those possessing an ordinary skill in the
pertinent arts, filter 100 may have a defined pass-band and an edge
of the pass-band. In order to gain equalize, filter 100 may be set
to pass a wavelength slightly offset from the wavelength
propagating as described in the add/drop discussion, thereby
utilizing the edge of the band as a partially
transmitting/reflecting filter. Slight tuning of the offsets may be
utilized to modify the amount of reflected signal, thereby being
suitable for use in equalizing the signal reflected from filter 100
in each pass band. The amount of offset for a given pass band may
be modified according to the incoming signal characteristics,
varying the reflectance in a pass band as described herein, thereby
adding a dynamic feature to the gain equalization.
Those of ordinary skill in the art will recognize that many
modifications and variations of the present invention may be
implemented without departing from the spirit or scope of the
invention. Thus, it is intended that the present invention covers
the modifications and variations of this invention provided they
come within the scope of the appended claims and their
equivalents.
* * * * *