U.S. patent number 6,559,487 [Application Number 09/702,846] was granted by the patent office on 2003-05-06 for high-vacuum packaged microgyroscope and method for manufacturing the same.
This patent grant is currently assigned to Samsung Electronics Co., Ltd.. Invention is credited to Seok-jin Kang, Ho-suk Kim, Youn-il Ko.
United States Patent |
6,559,487 |
Kang , et al. |
May 6, 2003 |
High-vacuum packaged microgyroscope and method for manufacturing
the same
Abstract
A high-vacuum packaged microgyroscope for detecting the inertial
angular velocity of an object and a method for manufacturing the
same. In the high-vacuum packaged microgyroscope, a substrate with
an ASIC circuit for signal processing is mounted onto another
substrate including a suspension structure of a microgyroscope in
the form of a flip chip. Also, the electrodes of the suspension
structure and the ASIC circuit can be exposed to the outside
through polysilicon interconnection interposed between double
passivation layers. The short interconnection between the
suspension structure and the ASIC circuit can reduce the device in
size and prevents generation of noise, thereby increasing signal
detection sensitivity. In addition, by sealing the two substrates
at low temperatures, for example, at 363 to 400.degree. C. using
co-melting reaction between metal, for example, Au, and Si in a
vacuum, the degree of vacuum in the device increases.
Inventors: |
Kang; Seok-jin (Suwon,
KR), Ko; Youn-il (Incheon, KR), Kim;
Ho-suk (Seoul, KR) |
Assignee: |
Samsung Electronics Co., Ltd.
(KR)
|
Family
ID: |
19618019 |
Appl.
No.: |
09/702,846 |
Filed: |
November 1, 2000 |
Foreign Application Priority Data
|
|
|
|
|
Nov 1, 1999 [KR] |
|
|
99-47965 |
|
Current U.S.
Class: |
257/254; 257/252;
438/51 |
Current CPC
Class: |
B81C
1/0023 (20130101); G01C 19/56 (20130101); G01P
1/023 (20130101); G01P 15/0802 (20130101); B81C
2203/0109 (20130101); B81C 2203/019 (20130101); B81B
2201/0242 (20130101) |
Current International
Class: |
B81B
3/00 (20060101); B81B 7/00 (20060101); G01P
15/08 (20060101); G01P 1/02 (20060101); G01C
19/56 (20060101); G01P 1/00 (20060101); H01L
027/20 (); H01L 029/84 (); H01L 027/14 (); H01L
029/82 (); H01L 021/00 () |
Field of
Search: |
;257/252,254
;438/51 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
Primary Examiner: Whitehead, Jr.; Carl
Assistant Examiner: Berezny; Nema
Attorney, Agent or Firm: Burns Doane Swecker & Mathis,
LLP
Claims
What is claimed is:
1. A high-vacuum packaged microgyroscope comprising: a first
substrate including a suspension structure suspended over a cavity
at a central location of said cavity, and inner and outer electrode
pads; and a second substrate including a signal processing circuit
evaluating the motion of the suspension structure, an interconnect
for extracting electrodes of the signal processing circuit and the
suspension structure of the second substrate to the outside, and
inner and outer metal/semiconductor composite layers for vacuum
sealing the first and second substrates, wherein the first and
second substrates are placed such that the suspension structure and
the signal processing circuit thereof face each other, and then
sealed by co-melting bond between the outer electrode pads and the
outer metal/semiconductor composite layers, and between the inner
electrode pads and the inner metal/semiconductor composite layers,
to form a vacuum space in the cavity which receives the suspension
structure, so that the first and second substrates are maintained
at a fixed potential and the electrodes of the suspension structure
and the signal processing circuits are extracted to the top of the
second substrate through the interconnect.
2. The high-vacuum packaged microgyroscope of claim 1, wherein the
suspension structure is formed of a polysilicon or monosilicon
layer.
3. The high-vacuum packaged microgyroscope of claim 1, wherein the
inner and outer electrode pads of the suspension structures are
formed of a polysilicon layer, a polysilicon/gold (Au) composite
layer, or polysilicon/aluminum (Al) composite layer.
4. The high-vacuum packaged microgyroscope of claim 1, wherein the
first and second substrates are formed of silicon.
5. The high-vacuum packaged microgyroscope of claim 4, wherein each
of the first and second substrates further comprises a first
passivation layer formed of silicon oxide or nitride to protect the
first and second substrates.
6. The high-vacuum packaged microgyroscope of claim 5, wherein the
interconnect is formed on both sides and the top and bottom edges
of the second substrate surrounded by the first passivation layer,
the both sides of the second substrate being formed by presence of
through holes, and a second passivation layer is formed on the
interconnect for insulation.
7. The high-vacuum packaged microgyroscope of claim 4, wherein the
outer metal/semiconductor composite layers are formed on outer
sides of a second passivation layer.
8. The high-vacuum packaged microgyroscope of claim 1, wherein the
degree of vacuum of the groove cavity reaches down to 10.sup.-6
torr.
9. The high-vacuum packaged microgyroscope of claim 1, wherein the
inner and outer metal/semiconductor composite layers are formed of
a thin Au/Si or Al/Si composite layer, such that the inner and
outer metal/semiconductor composite layers are melted and bonded
with the inner and outer electrode pads at a low temperature of 363
to 400.degree. C. to create a vacuum space without causing the
formation of voids at bonding sites.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a microgyroscope for detecting an
inertial angular velocity of an object and a method for
manufacturing the same, and more particularly, to a high-vacuum
packaged microgyroscope in which a suspension structure is vacuum
packaged at the wafer level and signal processing circuitry
integrated therein can be interconnected in the form of a flip chip
to external circuitry, and a method for manufacturing the same.
2. Description of the Related Art
FIG. 1 illustrates a conventional integrated micro pressure sensor
manufactured by anodic bonding. The integrated micro pressure
sensor in FIG. 1 includes a first glass plate 1 as an anodic
bonding frame, a silicon substrate 2, a first p.sup.+ -layer 3 as a
vibrating plate for sensing a pressure variation, a second p.sup.+
-layer 4 as an electrode for measuring a reference electrostatic
capacitance, a first metal electrode 5 for sensing an electrostatic
capacitance change, a second metal electrode 6 for measuring a
reference electrostatic capacitance, an ASIC circuitry area 7 for
processing a variety of signals, a getter 8 for adsorbing gases to
decrease the inner pressure near to vacuum levels, a conductive
epoxy resin (not shown) for interconnection to external circuitry,
and a second glass plate 10 as another anodic bonding frame. The
first and second glass plates 1 and 10, between which the micro
pressure sensor structure formed on the silicon substrate 2 is
interposed, serves as a vacuum case, and is evacuated to a pressure
of 10.sup.-6 torr, thus producing a vacuum, which allows the micro
pressure sensor to operate with high accuracy. The micro pressure
sensor structure includes a first capacitor structure for sensing a
variable electrostatic capacitance, which includes the first
p.sup.+ -layer 3, formed of the silicon substrate 2 and the first
metal electrode 5 deposited on the second glass plate 10, and a
second capacitor structure for sensing a reference electrostatic
capacitance change, which includes the second p.sup.+ -layer 4
formed of the silicon substrate 2 and the second metal electrode 6
deposited on the second glass plate 10. The first p.sup.+ -layer 3
of the first capacitor structure vibrates in accordance with
external pressure, thus causing the gap between itself and the
first metal electrode 5 to vary. Hence, the electrostatic
capacitance changes depending upon the pressure applied to the
first p.sup.+ -layer 3. Meanwhile, the second p.sup.+ -layer 4 of
the second capacitor structure remains still without vibration, so
that the gap between itself and the second metal electrode 6
remains constant, and thus the electrostatic capacitance does not
change. Changes in the electrostatic capacitance of the first
capacitor structure are measured with respect to the reference
electrostatic capacitance of the second capacitor structure, thus
enabling measurement of small changes in pressure. The getter 8 is
a gas adsorbing material for evacuating the space between the first
and second glass plates 1 and 10.
Such a micro pressure sensor operates very accurately in a strong
vacuum. The same principle can be applied to microgyroscopes. In
addition, microgyroscopes along with their associated signal
processing circuitry must be small enough to be used in, for
example, camcorders, 3D-mouses for Internet TV, automatic
navigation systems and the like. This requirement is a limiting
factor in most micro sensors as well as microgyroscopes. For
various electrostatic capacitive sensors in which vibration of a
microgyroscope enables the sensors to operate, vacuum packaging of
the suspension structure is needed for decreased driving voltage of
the circuit and increased sensitivity. One of the many approaches
for satisfying the need has been to use glass-to-silicon bonding
with an anodic bonding technique, which has been conducted
primarily in the Esashi Laboratory in Douhuku University in
Japan.
However, such an anodic bonding technique causes contamination of
an IC circuit by sodium ions and needs an additional electric field
shielding technique for protection of the IC from a high voltage
applied during bonding. Therefore, the anodic bonding technique may
present a fatal problem in ICs during bonding. In addition,
generation of excessive oxygen at bonding sites during bonding
hinders the evacuation of the structure, so that there is a room
for improvement.
SUMMARY OF THE INVENTION
To solve the above problems, it is an objective of the present
invention to provide a high-vacuum packaged microgyroscope and a
method for manufacturing the same, in which a substrate with a
signal processing ASIC circuit is mounted on another substrate
including a suspension structure of a microgyroscope in the form of
a 3-dimensional flip, which decreases the area of the device and
the length of interconnection between circuits, and the two
substrates are vacuum sealed at the wafer level at low temperatures
by a co-melting reaction between a metal and silicon.
An aspect of the above object of the present invention is achieved
by a high-vacuum packaged microgyroscope comprising: a first
substrate including a suspension structure suspended over a groove
cavity formed at the center of one surface thereof, and inner and
outer electrode pads; and a second substrate including a signal
processing circuit for sensing the motion of the suspension
structure, an interconnect for extracting electrodes of the signal
processing circuit and the suspension structure of the second
substrate to the outside, and inner and outer metal/semiconductor
composite layers for vacuum sealing the first and second
substrates, wherein the first and second substrates are placed such
that the suspension structure and the signal processing circuit
thereof face each other, and then sealed by co-melting bond between
the outer electrode pads and the outer metal/semiconductor
composite layers, and between the inner electrode pads and the
inner metal/semiconductor composite layers, to form a vacuum space
in the groove cavity which receives the suspension structure, so
that the first and second substrates are grounded and the
electrodes of the suspension structure and the signal processing
circuits are extracted to the top of the second substrate through
the interconnect.
Preferably, the first and second substrates are formed of silicon.
Each of the first and second substrates may further comprise a
first passivation layer formed of silicon oxide or nitride to
protect the first and second substrates. The suspension structure
may be formed of a polysilicon or monosilicon layer. The inner and
outer electrode pads of the suspension structures may be formed of
a polysilicon layer, a polysilicon/gold (Au) composite layer, or
polysilicon/aluminum (Al) composite layer. The interconnect may be
formed on both sides and the top and bottom edges of the second
substrate surrounded by the first passivation layer, the both sides
of the second substrate being formed by presence of through holes,
and a second passivation layer is formed on the interconnect for
insulation. The outer metal/semiconductor composite layers may be
formed on the outer sides of the second passivation layer.
Preferably, the degree of vacuum of the groove cavity reaches down
to 10.sup.-6 torr. Preferably, the inner and outer
metal/semiconductor composite layers are formed of a thin Au/Si or
Al/Si composite layer, such that the inner and outer
metal/semiconductor composite layers are melted and bonded with the
inner and outer electrode pads at a low temperature of 363 to
400.degree. C. to create a vacuum space without causing the
formation of voids at bonding sites.
Another aspect of the object of the present invention is achieved
by a method for manufacturing a high-vacuum packaged
microgyroscope, comprising the steps of: (a) etching a first
substrate to form a groove cavity at the center of the first
substrate, where a suspension structure is to be formed, and
forming a first passivation layer for protecting the first
substrate; (b) depositing a polysilicon layer on the etched surface
of the first substrate and patterning the polysilicon layer into
inner and outer electrode pads; (c) forming a suspension structure
by depositing a sacrificial layer over the inner and outer
electrode pads, patterning the sacrificial layer to form openings
to be anchors for sustaining the suspension structure, depositing
polysilicon over the opening and the sacrificial layer and
patterning the deposited polysilicon layer; (d) removing the
sacrificial layer by etching to float the suspension structure; (e)
forming an oxide pattern on a second substrate having a signal
processing circuit for sensing the motion of the suspension
structure; (f) patterning the second substrate using the oxide
pattern as an etching mask to form through holes for
interconnection to the outside, removing the oxide pattern, and
forming a first passivation layer for protecting the entire surface
of the second substrate; (g) forming an interconnect by depositing
a polysilicon layer to cover both sides and the top and bottom
edges of the second substrate surrounded by the first passivation
layer, and patterning the polysilicon layer; (h) depositing a
second passivation layer to cover the interconnect and the second
substrate and patterning the second passivation layer to form
openings for interconnection to the outside; (i) forming inner
metal/semiconductor composite layers for connection through the
openings to the interconnect, and outer metal/semiconductor
composite layer for vacuum packaging on the second passivation
layer; and (j) vacuum sealing the first and second substrates by
co-melting bond between the inner electrode pas of the first
substrate and the inner metal/semiconductor composite layers, and
between the outer electrode pads of the first substrate and the
outer metal/semiconductor composite layers of the second substrate,
to maintain the cavity of the suspension structure in a vacuum
condition.
Preferably, in the step (b) the inner and outer electrode pads of
the suspension structure are formed of a polysilicon layer, a
polysilicon/gold (Au) composite layer, or a polysilicon/aluminum
(Al) composite layer. Preferably, in the step (g) the polysilicon
is deposited by low pressure chemical vapor deposition (LPCVD).
Preferably, in the step (h) the second passivation layer is
deposited by plasma enhanced chemical vapor deposition (PECVD).
Preferably, in the step (i), the inner and outer
metal/semiconductor composite layers are formed of a Au/Si or Al/Si
composite layer. Preferably, in the step (j), the melting and
bonding are performed at a low temperature of 363 to 400.degree.
C., and the degree of vacuum in the cavity reaches down to
10.sup.-6 torr.
BRIEF DESCRIPTION OF THE DRAWINGS
The above object and advantages of the present invention will
become more apparent by describing in detail preferred embodiments
thereof with reference to the attached drawings in which:
FIG. 1 is a sectional view of a conventional microgyroscope;
FIG. 2 is a sectional view of a microgyroscope according to the
present invention;
FIGS. 3A through 3E are sectional views of successive stages of the
fabrication of a suspension structure on the first substrate for
the microgyroscope in FIG: 2;
FIGS. 4A through 4E are sectional views of successive stages of the
fabrication of a structure on the second substrate for the
microgyroscope in FIG. 2;
FIG. 5 is a sectional view of a completed microgyroscope according
to the present invention, obtained by sealing the first substrate
with the suspension structure of FIG. 3E and the second substrate
with a composite layer for interconnection and vacuum packaging by
anodic bonding; and
FIGS. 6A and 6B show top and sectional views of a wafer having
multiple microgyroscopes according to the present invention.
DETAILED DESCRIPTION OF THE INVENTION
A high-vacuum packaged microgyroscope according to the present
invention is constructed such that a substrate with a signal
processing ASIC circuit is mounted on another substrate with a
suspension structure in the form of a 3-dimensional flip, which can
decrease the size of the device and the length of interconnection
between circuits, and in turn reduce noise. The two substrates are
sealed at low temperature, for example, at a temperature of 363 to
400.degree. C. by a co-melting reaction of metal and silicon, for
example, gold and silicon, or aluminum and silicon, in a vacuum. In
addition, additional packaging processes such as wire bonding or
die bonding are not required, which sharply lowers the
manufacturing cost. Also, a reduction in the size of the device in
the order of several square millimeters contributes to minimizing
all devices in micro system related applications.
FIG. 2 is a sectional view of a high-vacuum packaged microgyroscope
according to the present invention. In FIG. 2, the microgyroscope
package includes a first substrate (structure wafer) 100 with a
suspension structure 13 of a microgyroscope, and a second substrate
(cap wafer) 200 with a signal processing circuit (not shown) and a
polysilicon interconnection 22 which allows for interconnection to
external circuits. The cap wafer 200 acts as a cap for a cavity 150
formed between the first and second substrates 100 and 200. The
polysilicon interconnection 22, which allows the first and second
substrates 100 and 200 to be interconnected with external circuits,
is exposed through the top of the second substrate 200, and
metal/silicon composite layers 24 and 25 for co-melt bonding are
formed at the lower part of the second substrate 200.
Also, a suspension structure 13 formed of a second polysilicon is
suspended over the groove portion at the center of the first
substrate 100, which permits the suspension structure to vibrate,
and the metal/silicon composite layer 25 formed at the lower part
of the second substrate 200 contributes to vacuum sealing the
cavity 150 between the first and second substrates 100 and 200. In
FIG. 2, reference numeral 11 represents a passivation layer of the
first substrate 100, reference numeral 12 represents an electrode
pad for interconnection formed of a first polysilicon, reference
numeral 21 represents a first passivation layer of the second
substrate 200, and reference numeral 23 represents a second
passivation layer of the second substrate 200.
The first and second substrates 100 and 200 are formed of a bulk
silicon, and protective layers such as the passivation layers 11
and 21 are formed of silicon oxide or nitride on the first and
second substrates 100 and 200. The microgyroscope suspension
structure 13 is formed over the first substrate 100 by a micro
machining technique, and the cavity 150 is evacuated to a desired
vacuum level, for example, down to 10.sup.-6 torr. The
metal/silicon composite layer 24 for sealing the cavity 150 between
the first and second substrates 100 and 200 is formed of an Au--Si
composite layer.
A method for fabricating such a greater vacuum microgyroscope
package having the above structure will now be described with
reference to FIGS. 3A through FIG. 5. First, the fabrication of a
suspension structure in the first substrate will be described with
reference to FIGS. 3A through 3E. In particular, FIG. 3A is a
sectional view of the first substrate for the microgyroscope
according to the present invention after the space for a suspension
structure has been etched and a passivation layer has been formed
on and underneath the first substrate, FIG. 3B is a sectional view
of the first substrate with a first polysilicon pattern on the
passivation layer, FIG. 3C is a sectional view of the first
substrate after a sacrificial layer has been formed on the
structure of FIG. 3B, FIG. 3D is a sectional view of the first
substrate with a suspension structure pattern formed on the
sacrificial layer with a second polysilicon pattern, and FIG. 3E is
a sectional view of the first substrate with a completed suspension
structure obtained by etching away the sacrificial layer.
Initially, as shown in FIG. 3A, the center area of one surface of
the first substrate 100 formed of silicon is etched to secure a
groove portion 150' where the suspension structure for a
microgyroscope is to be formed. Then, the passivation layer 11 is
formed as a protective layer of the first substrate 100 on the top
and bottom of the first silicon wafer 100 with an oxide or nitride
film.
Next, as shown in FIG. 3B, a first polysilicon layer is coated on
the passivation layer 11 and patterned into inner and outer
electrode pads 12. Then, a sacrificial layer (PSG) 14 is deposited
to cover the polysilicon electrode pads 12, as shown in FIG. 3C,
and then patterned to expose a portion of the electrode pads 12
which will be an anchor for sustaining the suspension structure.
Then, as shown in FIG. 3D, a second polysilicon layer is deposited
on the resultant structure and patterned to form the suspension
structure 13. Then, the sacrificial layer 14 is removed from the
structure by dry and wet etching, resulting in the complete
suspension structure 13 shown in FIG. 3E.
With reference to FIGS. 4A through 4E, the fabrication of a second
substrate structure with a signal processing circuit will now be
described. In particular, FIG. 4A is a sectional view of the second
substrate for the microgyroscope according to the present
invention, with an oxide pattern on the top and bottom of the same,
FIG. 4B is a sectional view of the second substrate after patterned
and surrounded by a first passivation layer as a protective layer
against etching, FIG. 4C is a sectional view of the second
substrate further having a metal pattern or polysilicon
interconnect, FIG. 4D is a sectional view of the second substrate
further having a second passivation layer formed to surround almost
all of the first passivation layer and the polysilicon
interconnect, FIG. 4E is a sectional view of the second substrate
further having metal/silicon composite layers at the lower part
thereof.
Referring to FIG. 4A, the second substrate 200, which includes a
signal processing circuit (not shown) for detecting the motion of
the suspension structure 13 (see FIG. 3E) of the microgyroscope, is
prepared, and an oxide layer is coated thereon and patterned into
an oxide pattern 20.
Then, the second substrate 200 is isotropically etched using the
oxide pattern 20 as an etching mask to form through holes 27
through which connection will be made with the outside. The oxide
pattern 20 is removed and the first passivation layer 21 is formed
to completely surround the resulting second substrate, as shown in
FIG. 48.
Then, as shown in FIG. 4C, a polysilicon layer is deposited on the
first passivation layer 21 of the second substrate 200 by low
pressure chemical vapor deposition (LPCVD) and then patterned,
resulting in the polysilicon interconnect 22.
Then, as shown in FIG. 4D, a silicon oxide layer is coated on the
polysilicon interconnect 22 and the first passivation layer 21 by
plasma enhanced chemical vapor deposition (PECVD) and patterned to
form the second passivation layer 23 having an opening 23' for
electrode pads as an opening 23" as a passage for connection to
external circuits.
Then, as shown in FIG. 4E, the outer and inner metal/Si composite
layers 24 and 25 for interconnection and vacuum packaging are
formed. The outer metal/Si composite layer 24 is for sealing the
cavity 150 (see FIG. 2) between two substrates. The inner metal/Si
composite layer 25 is adhered to the electrode pad 12 of the first
substrate 100 by melting, which allows the interconnection between
the electrodes of the suspension structure 13 of the first
substrate 100 and the ASIC circuit of the second substrate 200 to
be connected to the outside.
Finally, as shown in FIG. 5, the electrode pads 12 on the first
substrate 100 are adhered to the metal/Si composite layers 24 and
25 of the second substrate 200 by a co-melting reaction at low
temperatures, such that the first and second substrates 100 and 200
are vacuum sealed while the suspension structure 13 is suspended in
a vacuum condition, resulting in a completed device.
In manufacturing, many microgyroscopes, which have the
configuration mentioned above, are simultaneously formed on a
single wafer, as shown in FIGS. 6A and 6B. FIGS. 6A and 6B show top
and sectional views of the wafer having multiple microgyroscopes
according to the present invention, respectively. In FIGS. 6A and
6B, reference numeral 180 represents a ball for bonding a flip chip
and reference numeral 190 represents a dicing line.
The principle of the high vacuum packaged microgyroscope having the
above configuration is as follows. Briefly, the electrode pads 12
of the first substrate 12 and the outer and inner metal/Si
composite layers 24 and 25 of the second substrate 200 are melted
and cooled using the co-melting properties to seal the cavity 150
therein. At the same time, the interconnections between the
electrodes of the suspension structure 13 of the first substrate
and the ASIC driving circuit (not shown) of the second substrate
200 are extracted to the outside. The co-melting bonding refers to
a kind of bonding technique in which two materials having high but
different melting points are melted and bonded at a temperature
lower than the melting points. For example, the melting point of
gold (Au), which is a commonly used metal, is 1063.degree. C. and
the melting point of Si is 2410.degree. C. However, when these two
materials, Au and Si, contact, they can melt at 363.degree. C.
Thus, before the vacuum sealing of the first and second substrates
100 and 200, the first and second substrates 100 and 200 are
maintained at 350.degree. C., which is high enough to remove a
variety of organic substances, for example, gases adsorbed onto the
surface of a thin film, such as oxygen, nitrogen and carbon
dioxide, for degassing, and then two substrates 100 and 200 are
melted and bonded at 363 to 400.degree. C. This melting and bonding
process according to the present invention can exclude the
degassing of impurities, which is usually performed for a long
period of time after such a bonding, and the inner pressure of the
space between the first and second substrates 100 and 200 becomes
near vacuum levels in the vacuum chamber. In addition, the
electrodes of the suspension structure 13 or the electrodes of the
ASIC can be extracted to the top of the second substrate 200
through the polysilicon interconnection 22 of the second substrate
200.
As described above, in the high-vacuum packaged microgyroscope
according to the present invention, a substrate with an ASIC
circuit for signal processing is mounted onto another substrate
including the suspension structure of a microgyroscope in the form
of a flip chip. Also, the electrodes of the suspension structure
and the ASIC circuit can be exposed to the outside through the
polysilicon interconnection interposed between double passivation
layers. The short interconnection between the suspension structure
and the ASIC circuit can reduce the device in size and prevents
generation of noise, thereby increasing signal detection
sensitivity.
Also, by sealing two substrates at low temperatures, for example,
at 363 to 400.degree. C. using the co-melting reaction between
metal, for example, Au, and Si in a vacuum, the degree of vacuum in
the device increases. Also, additional processes, such as wire
bonding and die bonding, are not required, the manufacturing cost
decreases and the size of the product decreases in the order of
several square millimeters. This contributes to reducing the size
and weight of micro system related applications. In addition, when
the first and second substrates are electrically connected and
grounded, inflow or outflow of the electric field can be blocked
and the generation of noise due to elongated interconnections can
be avoided, thereby increasing a signal detection sensitivity.
While this invention has been particularly shown and described with
reference to preferred embodiments thereof, it will be understood
by those skilled in the art that various changes in form and
details may be made therein without departing from the spirit and
scope of the invention as defined by the appended claims.
* * * * *