U.S. patent number 6,141,256 [Application Number 09/470,079] was granted by the patent office on 2000-10-31 for differential flash memory cell and method for programming same.
This patent grant is currently assigned to Micron Technology, Inc.. Invention is credited to Leonard Forbes.
United States Patent |
6,141,256 |
Forbes |
October 31, 2000 |
Differential flash memory cell and method for programming same
Abstract
A flash memory cell. The flash memory cell includes first and
second transistors. The first transistor has a control gate coupled
to a word line, a drain coupled to a data line and a floating gate.
The second transistor, similarly, includes a control gate coupled
to the word line, a drain coupled to a second data line and a
second floating gate. The first floating gate stores a state of the
second transistor prior to programming of the flash memory cell.
Further, the second floating gate stores a programmed state of the
second transistor. A difference between the states of the first and
second transistors represents the value of the data stored in the
flash memory cell.
Inventors: |
Forbes; Leonard (Corvallis,
OR) |
Assignee: |
Micron Technology, Inc. (Boise,
ID)
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Family
ID: |
25152069 |
Appl.
No.: |
09/470,079 |
Filed: |
December 22, 1999 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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031616 |
Feb 27, 1998 |
6009018 |
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790902 |
Jan 29, 1997 |
5754477 |
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Current U.S.
Class: |
365/185.33;
365/202; 365/207 |
Current CPC
Class: |
G11C
11/5621 (20130101); G11C 16/0441 (20130101); G11C
11/5628 (20130101); G11C 11/5642 (20130101); G11C
2216/08 (20130101); G11C 2211/5612 (20130101) |
Current International
Class: |
G11C
16/04 (20060101); G11C 11/56 (20060101); G11C
007/00 () |
Field of
Search: |
;365/185.01,230.01,185.33,202,207 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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0139185 |
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May 1985 |
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EP |
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0448118 |
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Sep 1991 |
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EP |
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0750353 |
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Dec 1996 |
|
EP |
|
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|
Primary Examiner: Fears; Terrell W.
Attorney, Agent or Firm: Schwegman, Lundberg, Woessner &
Kluth, P.A.
Parent Case Text
This application is a continuation of U.S. application Ser. No.
09/031,616, filed Feb. 27, 1998 now U.S. Pat. No. 6,009,018, which
is a continuation of U.S. application Ser. No. 08/790,902, filed
Jan. 29, 1997, now U.S. Pat. No. 5,754,477.
Claims
What is claimed is:
1. A flash memory cell, comprising:
a first transistor with a first floating gate;
a second transistor with a second floating gate;
a load circuit coupleable to first and second data lines to balance
the state of the first and second transistors prior to programming
the flash memory cell; and
wherein the first and second transistors are coupled to the first
data line and the second data line respectively and a common word
line such that the flash memory cell provides a differential output
signal on the data lines based on charge stored on the first and
second floating gates, the differential output signal representing
multiple bits of data stored in the flash memory cell.
2. The flash memory cell of claim 1, wherein the first and second
floating gates comprise crystals of silicon disposed in gate oxides
of the first and second transistors.
3. The flash memory cell of claim 1, wherein the first and second
floating gates comprise layers of conductive material formed in
gate oxides of the first and second transistors such that
measurable step changes in drain current are created in the
transistors as charge is deposited on the floating gates.
4. The flash memory cell of claim 1, wherein the first transistor
and the second transistor comprise field effect transistors.
5. The flash memory cell of claim 1, wherein the load circuit
comprises a first and a second resistor coupled to a power supply,
wherein the first resistor is coupled between the power supply and
the first data line and the second resistor is coupled between the
second data line and the power supply.
6. The flash memory cell of claim 1, wherein the load circuit
comprises a first and a second transistor coupled to a power
supply, wherein the first transistor is coupled between the power
supply and the first data line and the second transistor is coupled
between the second data line and the power supply.
7. The flash memory cell of claim 6, wherein the first and second
transistors comprise first and second p-channel field effect
transistors coupled in a differential configuration, wherein a
drain of the first transistor is coupled to a gate of the first
transistor and the first data line and a drain of the second
transistor is coupled to the second data line.
8. A flash memory cell, comprising:
a first transistor with a first floating gate, wherein the first
transistor is coupled to a first data line;
a second transistor with a second floating gate, wherein the second
transistor is coupled to a second data line;
a load circuit that is coupleable to the first and second data
lines to balance the state of the reference and storage transistors
prior to programming the flash memory cell; and
wherein the first transistor stores a state of the second
transistor prior
to programming of the flash memory cell such that a difference
between the state of the first transistor and the state of the
second transistor, after programming, represents the value of the
data stored in the flash memory cell.
9. The flash memory cell of claim 8, wherein each floating gate
comprises a number of crystals of silicon.
10. The flash memory cell of claim 8, wherein the first and second
floating gates comprise layers of conductive material formed in
gate oxides of the first and second transistors such that
measurable step changes in drain current are created in the
transistors as charge is deposited on the floating gates.
11. The flash memory cell of claim 8, wherein the first transistor
and the second transistor comprise field effect transistors.
12. The flash memory cell of claim 8, wherein the load circuit
comprises a first and a second resistor coupled to a power supply,
wherein the first resistor is coupled between the power supply and
the first data line and the second resistor is coupled between the
second data line and the power supply.
13. The flash memory cell of claim 8, wherein the load circuit
comprises a first and a second transistor coupled to a power
supply, wherein the first transistor is coupled between the power
supply and the first data line and the second transistor is coupled
between the second data line and the power supply.
14. The flash memory cell of claim 13, wherein the first and second
transistors comprise first and second p-channel field effect
transistors coupled in a differential configuration, wherein a in
of the first transistor is coupled to a gate of the first
transistor and the first data line and a drain of the second
transistor is coupled to the second data line.
15. A memory device, comprising:
an array of flash memory cells, each memory cell comprising first
and second floating gate transistors;
a word line decoder coupled to the array of flash memory cells;
a data line decoder coupled to the array of flash memory cells;
a plurality of address lines coupled to the data line decoder and
the word line decoder, wherein the data line decoder and the word
line decoder receive address signal for accessing each cell of the
array from an electronic device; and
a sense amplifier coupled to the data line decoder to receive
signals from the first and second floating gate transistors of an
accessed memory cell so as to determine multiple bits of data
stored in the memory cell based on the difference in drain current
of the first and second transistors.
16. The memory device of claim 15, wherein the first and second
floating gate transistors comprise nano-crystalline floating
gates.
17. The memory device of claim 15, wherein the floating gate
comprises a layer of polysilicon material.
18. The flash memory cell of claim 15, wherein the first and second
floating gate transistors comprise field effect transistors.
19. The memory device of claim 15, and further comprising a
balancing circuit that balances the conductive state of the first
and second floating gate transistors of a memory cell prior to
storing data in the cell.
20. The flash memory cell of claim 15, wherein the first and second
floating gates comprise layers of conductive material formed in
gate oxides of the first and second transistors such that
measurable step changes in drain current are created in the
transistors as charge is deposited on the floating gates.
21. A method of storing data in a flash memory cell having first
and second floating gate transistors, the method comprising:
balancing the drain current of the first and second floating gate
transistors by adjusting the charge on the floating gates;
changing the conductive state of the first transistor;
measuring the change in drain current of the first transistor;
ceasing to change the conductive state of the first transistor when
the drain current achieves a selected level associated with the
value of the data to be stored; and
storing charge on the floating gate of the second transistor.
22. The method of claim 21, wherein changing the conductive state
of the first transistor comprises trapping electrons with
nano-crystals of the floating gate of the first transistor.
23. The method of claim 21, wherein measuring the change in drain
current comprises counting step changes in drain current.
24. The method of claim 21, wherein storing charge on the floating
gate of the second transistor comprises storing the initial state
of the second transistor on the first transistor.
25. The method of claim 21, wherein balancing the drain current of
the first and second floating gate transistors comprises applying a
load to first and second data lines of the flash memory cell so as
to change the conductive state of one of the first and second
transistors by hot electron injection.
26. The method of claim 21, wherein changing the conductive state
of the first transistor comprises storing charge on the floating
gate of the first transistor.
27. The method of claim 21, wherein storing charge on the floating
gate of the first transistor comprises:
applying a first voltage to the data line of the first transistor;
and
applying a second voltage, less than said first voltage, to the
data line of the second transistor.
28. A method of programming a flash memory cell having first and
second floating gate transistors, the method comprising:
balancing the flash memory cell such that the first and second
floating gate transistors have substantially the same conductive
state; and
depositing charge on the floating gates of the first and second
floating gate transistors so as to create measurable step changes
in drain current corresponding to the value of the multiple bits of
data to be stored in the flash memory cell.
29. The method of claim 28, wherein balancing the flash memory cell
comprises applying a load to first and second data lines of the
flash memory cell so as to change the conductive state of one of
the first and second transistors by hot electron injection.
30. The method of claim 28, wherein depositing charge on the
floating gates of the first and second floating gate transistors
comprises:
applying a first voltage to the data line of the first transistor;
and
applying a second voltage, less than the first voltage, to the data
line of the second transistor.
31. A method of reading data from a flash memory cell having first
and second floating gate transistors, the method comprising:
balancing the conductive state of the first and second floating
gate transistors;
programming a flash memory cell with a plurality of distinct charge
states that correspond to step changes in drain current induced by
storing charge on the floating gate of the second floating gate
transistor;
detecting the difference in charge on the floating gates of the
first and second floating gate transistors;
amplifying the differences in drain current of the first and second
floating gate transistors due to the differences in charge stored
on the floating gates of the first and second floating gate
transistors; and
creating a differential signal corresponding to the value of the
data stored in the flash memory cell.
32. The method of claim 31, wherein creating a differential signal
comprises counting the number of steps in the difference in drain
current between the first and second floating gate transistors.
33. The method of claim 32, and further comprising converting the
differential signal into a binary number based on the number of
step changes in drain current.
34. The method of claim 32, wherein balancing the flash memory cell
comprises applying a load to first and second data lines of the
flash memory cell so as to change the conductive state of one of
the first and second transistors by hot electron injection.
35. A method of writing data to a flash memory cell of a flash
memory device, the method comprising:
receiving an address on an address line;
decoding an associated word line for a selected flash memory cell,
wherein the flash memory cell comprises a reference transistor with
a first floating gate and a storage transistor with a second
floating gate;
activating the word line;
decoding an associated data line for the selected flash memory
cell; and
programming the selected flash memory cell to store multiple bits
of data bits in the memory cell based on the difference in drain
current of the reference and storage transistors.
Description
TECHNICAL FIELD OF THE INVENTION
The present invention relates generally to the field of electronic
devices and, in particular, to a differential flash memory cell and
method for programming same.
BACKGROUND OF THE INVENTION
Typically, computer systems store data on a magnetic medium such as
a hard disk drive. The hard disk drive is an electromechanical
component of the computer system that operates by storing
polarities on magnetic material which can be rewritten quickly and
as often as desired. A typical hard drive includes at least two
moving parts that respond to control signals generated by a
processor of the computer system. Conventionally, a hard disk drive
includes a disk that is formed from an aluminum substrate that is
rotatably mounted to a base. A magnetic material is deposited on a
surface of the substrate. A rotatable actuator arm moves a ceramic
transducer over the surface of the disk to read data from and write
data to the hard disk. These mechanical parts are more delicate and
less reliable than the other, solid state, components of the
computer system. However, magnetic hard disk systems have dominated
storage media for computers and related systems due to the low cost
and high density storage capacity of available magnetic hard disk
systems when compared to conventional solid state alternatives.
Solid state memory devices store data in storage locations,
referred to as "cells." Conventional designs only allow a single
bit of data to be stored at a given time in each cell. Typically, a
cell includes an access transistor and a storage element such as a
capacitor or a floating gate that stores data based on the electric
charge on the storage element. The electric charge in conventional
applications represents either a binary "1" or "0" and thus
conventional designs require a single transistor for each bit of
data. The storage density for solid state memories is limited by
the ability of designers to pack transistors close together on a
semiconductor substrate. Although transistors can be packed more
tightly together with each succeeding generation of design
technology, this density does not compare well with the storage
density of a magnetic medium.
Recently, designers have attempted to increase the storage density
of flash memory cells by creating a memory cell that is capable of
storing more than one data bit--so called "multi-state" flash
memory cells. In a conventional flash memory, charge is stored on a
floating gate of a field-effect transistor in response to a signal
applied to a control gate. The charge on the floating gate
represents either a binary "1" or "0" based on the effect the
charge has on the current through the transistor. When the floating
gate is charged, the drain current is reduced. Initially, the
floating gate is not charged, which represents a binary "1." When a
binary "0" is stored, electrons are forced to the floating gate by
a sufficient voltage on the control gate to induce hot electron
injection which reduces the drain current of the transistor. Thus,
by sensing the drain current of the transistor, the value of the
data bit stored by the flash memory cell can be determined.
To increase the number of states that can be stored, designers have
attempted to use adjustments to the threshold voltage of the
transistor. Unfortunately, this technique has only been shown to
work with, at most, storing two to four bits of data in a single
cell due to variations in threshold voltage of each transistor in
the array of memory cells. Otherwise, complex programming
techniques to adjust the threshold voltage of the transistors
during each read and write operation must be used. Thus, current
flash memory designs that store multiple states provide only a
modest improvement over conventional solid state memories due to
difficulties in reading the state stored on the floating gate.
For the reasons stated above, and for other reasons stated below
which will become apparent to those skilled in the art upon reading
and understanding the present specification, there is a need in the
art for a solid state memory device that is capable of effectively
storing and retrieving multiple bits of data in each memory
cell.
SUMMARY OF THE INVENTION
The above mentioned problems with memory devices and other problems
are addressed by the present invention, which will be understood by
reading and studying the following specification. A flash memory
cell and method for programming the same are described which allow
storage of multiple bits per cell.
In particular, an illustrative embodiment of the present invention
includes a flash memory cell with first and second transistors. The
first transistor has a control gate coupled to a word line, a drain
coupled to a data line and a floating gate. The second transistor,
similarly, includes a control gate coupled to the word line, a
drain coupled to a second data line and a second floating gate. The
first floating gate stores a state of the second transistor prior
to programming of the flash memory cell. Further, the second
floating gate stores a programmed state of the second transistor. A
difference between the states of the first and second transistors
represents the value of the data stored in the flash memory
cell.
In another embodiment, the present invention provides a method for
storing multiple bits of data in a flash memory cell. According to
the method, storage and reference transistors of the flash memory
cell are first balanced. This means that the transistors are forced
to have substantially the same conductive state. Next charge is
stored on the floating gate of the storage transistor so as to
change the drain current of the storage transistor in measurable
step changes. The number of step changes in drain current of the
storage transistor corresponds to the value of the multiple bits of
data to be stored in the flash memory cell.
In another embodiment of the present invention, a flash memory cell
includes a reference transistor with a first floating gate and a
storage transistor with a second floating gate. The reference and
storage transistors are coupled to a common word line. Further, the
reference and storage transistors are coupled to different data
lines. The flash memory cell provides a differential output signal
on the data lines based on charge stored on the first and second
floating gates. The differential output signal represents multiple
bits of data stored in the flash memory cell.
In another embodiment of the present invention, a flash memory cell
includes a reference transistor with a first floating gate and a
storage transistor with a second floating gate. The first
transistor stores a state of the second transistor prior to
programming of the flash memory cell. Thus, a difference between
the state of the first transistor and the state of the second
transistor after programming represents the value of the data
stored in the flash memory cell.
In another embodiment of the present invention, a memory device
includes an array of flash memory cells. Each cell includes a
reference transistor with a first floating gate and a storage
transistor with a second floating gate. The memory device further
includes addressing circuitry coupled to the array for accessing a
cell of the array. Finally, the memory device includes a sense
circuit that is coupled to the array to receive signals from the
reference and storage transistors of an accessed memory cell so as
to determine multiple bits of data stored in the memory cell based
on the difference in drain current of the reference and storage
transistors.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic diagram that illustrates an embodiment of a
flash memory cell according to the teachings of the present
invention;
FIGS. 2A and 2B are schematic diagrams of load devices for the
flash memory cell of FIG. 1 according to an embodiment of the
present invention;
FIG. 3 is a cross sectional view of a transistor with a floating
gate comprised of a number of gate elements for use in the flash
memory cell of FIG. 1;
FIG. 4 is a graph that illustrates the relationship between the
rate of hot electron injection and voltages applied to a transistor
with a floating gate;
FIG. 5 is a schematic diagram that illustrates aspects of the
operation of the flash memory cell of FIG. 1; and
FIG. 6 is a block diagram of a flash memory device according to the
teachings of the present invention.
DETAILED DESCRIPTION OF THE INVENTION
In the following detailed description of the preferred embodiments,
reference is made to the accompanying drawings which form a part
hereof, and in which is shown by way of illustration specific
illustrative embodiments in which the invention may be practiced.
These embodiments are described in sufficient detail to enable
those skilled in the art to practice the invention, and it is to be
understood that other embodiments may be utilized and that logical,
mechanical and electrical changes may be made without departing
from the spirit and scope of the present invention. The following
detailed description is, therefore, not to be taken in a limiting
sense.
For purposes of this specification, prepositions, such as "on,"
"side," (as in "sidewall"), "higher," "lower," "over," and "under"
are defined with respect to the conventional planar working surface
being on the top surface of the chip or wafer, regardless of the
orientation in which the chip is actually held.
FIG. 1 is a schematic diagram of an illustrative embodiment of a
flash memory cell, indicated generally at 10, that is constructed
according to the teachings of the present invention. Memory cell 10
includes first and second field-effect transistors 12 and 14.
Transistors 12 and 14 include floating gates 16 and 18,
respectively. The term "floating gate" signifies that gates 16 and
18 are electrically isolated in an insulative material, such as a
gate oxide. Cell 10 stores data based on the difference in charge
on floating gates 16 and 18. Cell 10 is substantially non-volatile
(e.g., when power is turned off to cell 10, data stored on floating
gates 16 and 18 is not lost) due to a low refresh requirement to
maintain charge on floating gates 16 and 18. Further, transistors
12 and 14 include control gates 20 and 22. Control gates 20 and 22
are coupled together and are coupled to word line 36.
In one embodiment, floating gates 16 and 18 are constructed of a
number of
isolated crystals of conductive material as described below with
respect to FIG. 3. Other structures for floating gates 16 and 18
may be substituted for this nano-crystal structure so long as the
structure allows charge stored on the floating gates to cause
measurable changes in drain current of the transistors, as
described below. This includes polycrystalline silicon gates as
normally employed in flash memories. Transistors 12 and 14 also
include sources 24 and 26 and drains 28 and 30, respectively.
Sources 24 and 26 are coupled to ground potential and drains 28 and
30 are coupled to data lines 32 and 34. Data lines 32 and 34 are
coupled to a load such as load circuit 37 of FIG. 2A or load
circuit 46 of FIG. 2B. Each of these load circuits is described in
more detail below with respect to their function in the operation
of flash memory cell 10.
In operation, flash memory cell 10 stores data using floating gates
16 and 18 of transistors 12 and 14. To "program" or "write" data to
cell 10, transistors 12 and 14 are first "balanced". The term
"balanced" means that the transistors are adjusted such that they
have substantially the same conductivity state or drain current.
Transistors 12 and 14 are balanced by adjusting the charge on
floating gates 16 and 18 as described below. Once transistors 12
and 14 are balanced, cell 10 can be programmed by storing charge on
floating gate 18, for example, using hot electron injection. In
this manner, transistor 12 stores the initial or pre-programming
state of transistor 14 (by the balancing operation) and the
difference between the state of transistor 12 and the state of
programmed transistor 14 establishes the value of data stored in
cell 10.
To balance transistors 12 and 14, data lines 32 and 34 are coupled
to a power supply through small resistors using, for example, load
circuit 37 of FIG. 2A. Load circuit 37 includes first and second
resistors 38 and 40 and power supply V.sub.DD. Resistor 38 is
coupled between V.sub.DD and data line 32. Similarly, resistor 40
is coupled between data line 34 and V.sub.DD. In this
configuration, the voltages of drains 28 and 30 are substantially
the same. Due to minor variations between characteristics of
transistors 12 and 14, e.g., threshold voltage, one transistor may
have a higher drain current than the other transistor. As shown in
FIG. 4, the rate of hot electron injection of a transistor with a
floating gate is a function of the excess gate-to-source voltage
above the threshold voltage, (V.sub.GS -V.sub.T), of the transistor
as shown by curve 42 of FIG. 4. It is noted that curve 42 is for a
fixed drain-to-source voltage. In region 44, curve 42 is
substantially linear with a positive slope when a log scale is used
to plot the rate of hot electron injection. If transistors 12 and
14 are biased in region 44, then the transistor with the lower
threshold voltage will exhibit a higher rate of hot electron
injection. As a result, the threshold voltage of this transistor
will increase at a faster rate until the conductivity of the two
transistors are substantially the same. Transistors 12 and 14 can
be biased in region 44 by using enhancement mode devices with a
positive threshold voltage that is a fraction of the power supply
voltage. The degree of balance can be determined by connecting data
lines 32 and 34 to a differential sense amplifier (not shown) and
monitoring the small voltage drop across transistors 38 and 40. The
balance operation can be terminated when the conductivity of
transistors 12 and 14 reach an acceptable balance level.
Once transistors 12 and 14 are balanced, cell 10 can be programmed
by storing charge on floating gate 18 of transistor 14. This
operation is depicted graphically in FIG. 5. A voltage, labeled
V.sub.X is applied to data line 34 and a lower voltage, 1.5/V.sub.X
is applied to data line 32. This induces hot electron injection in
transistor 14. Meanwhile, transistor 12 exhibits insubstantial hot
electron injection because the gate voltage is higher than the
drain voltage such that transistor 12 operates in the linear
region. Thus, .the device characteristics of transistor 12 are
substantially unchanged while charge is built up on floating gate
18 of transistor 14 which reduces its conductive state. The change
in conductivity of transistor 14 can be monitored during
programming to store a value that represents a number of bits of
data.
As described below, cell 10 uses a floating gate that induces step
changes in drain current as charge builds up on floating gate 18.
The step changes in drain current of transistor 14 are monitored
(e.g., counted) during programming. The number of step changes in
drain current can be converted to a binary representation, e.g., a
number of bits. For example, the binary number 1001 can be
programmed into cell 10 by storing enough charge on floating gate
18 so as to induce nine step changes in drain current of transistor
14.
It is noted that the programming step can include the step of
storing no additional charge on floating gate 18 such that the
difference in charge between floating gates 16 and 18 is
substantially zero.
In a read operation, data is read from cell 10 by amplifying the
difference in charge stored on floating gates 16 and 18. For
example, load circuit 46 of FIG. 2B is coupled to data lines 32 and
34 to detect and amplify any imbalance in charge on floating gates
16 and 18. Load circuit 46 includes first and second p-channel
field effect transistors coupled in a differential configuration.
Namely, a gate of transistor 48 is coupled to a gate of transistor
50. A source of transistor 48 and a source of transistor 50 are
coupled to a power supply, V.sub.DD. A drain of transistor 48 is
coupled to the gate of transistor 48 and to data line 32. Finally,
a drain of transistor 50 is coupled to data line 34. The
differential configuration of load circuit 46 amplifies the
differences in drain current of transistors 12 and 14 due to
differences in charge stored on floating gates 16 and 18. Since
load circuit 46 can have a large gain and very low offsets, small
differences in charge can be detected, including as low as the
charge of a single electron. Thus a large number of distinct charge
states can be programmed with cell 10 that correspond to step
changes in drain current induced by storing charge on floating gate
18 of cell 10. By counting the number of steps in the difference in
drain current between transistors 12 and 14, a differential signal
is created that corresponds to the value of the data stored in cell
10. This signal may be converted into a binary number based on the
number of step changes in drain current.
Floating gates 16 and 18 are configured to allow detection of step
changes in drain current when charge is stored. For example,
floating gates 16 and 18 can be fabricated as a layer of
polysilicon material disposed in a gate oxide using 0.3 micron
technology and a 100 .ANG. gate oxide thickness. With this
configuration, floating gates 16 and 18 have a capacitance on the
order of 0.3 fF. A single electron changes the potential of such a
floating gate by approximately 0.5 mV. Since load circuit 46 has a
gain of at least 10, a single electron difference between floating
gates 16 and 18 results in an output of approximately 5 mV from
load circuit 46 based on the modified drain current of transistor
18. This voltage level is detectable with conventional circuitry.
Thus, the effect of a single electron difference in stored charge
is measurable and a value that represents multiple bits of data can
be stored in cell 10 by counting the number of measurable steps of
change in the drain current of transistor 14 as compared to the
drain current of transistor 12.
In an alternative embodiment, floating gates 16 and 18 can use a
nano-crystalline configuration. FIG. 3 is a cross sectional diagram
of a transistor memory cell 10. The transistor of FIG. 3 is
described herein with respect to transistor 14 of cell 10. However,
it is understood that transistor 12 can be constructed in a similar
manner. Floating gate 18 comprises crystals of, for example,
silicon, silicon carbide, or other appropriate semiconductor
material that are implanted in oxide layer 52 at low density using
conventional processing techniques. Due to the low density of
implantation, the semiconductor material nucleates into grains to
form crystals 54. Crystals 54 are referred to as "nano-grains" or
"nano-crystals" due to their typical size with a surface area on
the order of 10.sup.-13 cm.sup.2.
Crystals 54 of floating gate 18 are formed at a distance of
approximately 60 to 100 .ANG. from working surface 56 of
semiconductor layer 58. Advantageously, this distance, coupled with
the size of crystals 54, allows each crystal 54 to trap at most one
electron which causes a step change in the drain current of
transistor 14. This step change in drain current is measurable and
thus allows storage of multiple data bits with a single transistor
14.
The step change in current of transistor 14 can be seen from the
following analysis. First, the capacitance between crystal 54 and
semiconductor layer 56 is given according to the following
equation: ##EQU1## in which C is the capacitance, Area is the
surface area of crystal 54, d is the distance between crystal 54
and surface 56 of semiconductor layer 58, and the correction term
accounts for the fact that crystal 54 has a smaller surface area
than semiconductor layer 56 and the electric field will vary at the
perimeter of crystals 54. Assuming that d is 100 angstroms and the
area of crystal 54 is on the order of 10.sup.-13 cm.sup.2, the
capacitance of crystal 54 is approximately 1.0.times.10.sup.-19
Farad. The charge of an electron is 1.6.times.10.sup.-19 coulombs
and will result in a change of potential of crystal 54 by
approximately 1.6 volts. Crystal 54 becomes repulsive to electrons
once a single electron is trapped during a write operation. Thus,
each crystal 54 is constrained to a distinct change in charge state
by capturing only one electron. The change in charge state in turn
causes a distinct step change in drain current of transistor 14.
Transistor 14 amplifies the change in drain current and thus the
change is easily detectable.
Floating gate 18 of memory cell 10 can be programmed to store the
value of a number of bits at the same time. To do this, the number
of step changes in drain current during a write operation are
counted. The number of step changes in drain current relates to the
value of the bits to be stored. In this manner, a multiplicity of
different states can be stored resulting in the storage of multiple
bits on a single floating gate 18.
It is noted that a programmed cell is erased by driving the voltage
on word line 36 to a large negative voltage such that charge on
floating gate 18 is discharged using conventional tunneling
techniques.
FIG. 6 is a block diagram of an embodiment of a memory device,
indicated generally at 100, that is constructed according to the
teachings of the present invention.
Memory device 100 includes array 102 of flash memory cells. Array
102 stores data using a number of memory cells of the type shown
and described above with respect to FIGS. 1 through 5.
Each cell of array 102 may be accessed according to address signals
provided by electronic system 104. Address lines 109 are coupled to
word line decoder 106 and data line decoder 110. Word line decoder
106 and data line decoder 110 are coupled to array 102. Sense
circuit 114 is coupled to data line decoder 110 and provides the
output of flash memory device 100.
In operation, flash memory device 100 writes, reads and erases
multiple bits in each storage location of the array 102.
In write mode, flash memory device 100 receives an address on
address line 109. Word line decoder 106 decodes the associated word
line for a selected cell and activates the word line. Data line
decoder 110 similarly decodes the data line for the desired cell.
The selected cell in array 102 is then programmed to a selected
state to store a number of bits in the cell as described above.
In read mode, the address of the selected cell is similarly decoded
and the cell of array 102 is accessed. Data line decoder 110
couples the selected cell to sense circuit 114 which outputs a
signal with a number of bits based on the sensed difference in
drain currents of the two transistors in the accessed cell.
CONCLUSION
Although specific embodiments have been illustrated and described
herein, it will be appreciated by those of ordinary skill in the
art that any arrangement which is calculated to achieve the same
purpose may be substituted for the specific embodiment shown. This
application is intended to cover any adaptations or variations of
the present invention. For example, the data line decoders are not
necessary when a sense amplifier is provided for each data line.
Further, crystals 30 can be formed from other materials that are
capable of trapping an electron by hot electron injection. Other
configurations for the floating gate can also be used so long as
measurable step in drain current can be measured as charge is
stored on the floating gates.
* * * * *