U.S. patent number 5,132,575 [Application Number 07/749,247] was granted by the patent office on 1992-07-21 for method for providing multi-level potentials at a sense node.
This patent grant is currently assigned to Micron Technology, Inc.. Invention is credited to Wen-Foo Chern.
United States Patent |
5,132,575 |
Chern |
July 21, 1992 |
**Please see images for:
( Certificate of Correction ) ** |
Method for providing multi-level potentials at a sense node
Abstract
Voltage sensing brings a sense node to three potentials by first
grounding the node to a first potential equal to a reference
potential and then floating the node to a substantially stabilized
second potential equal to the reference potential plus a threshold
voltage of an electrical device through which leakage current is
pumped. The second potential is then decreased to a third potential
greater than or equal to the first potential. The voltage sensing
herein described typically is utilized in order to bias digit lines
in a dynamic random access memory (DRAM) device during the active
portion of the DRAM cycle and during an initiation of the precharge
portion of the DRAM cycle. The second potential reduces the current
leakage of the memory cell without utilizing an electrical device
having a high threshold voltage. The initial momentary discharge of
the sense node to the first potential allows a sense amplifier to
behave like a conventional sense amplifier during initial sensing,
thereby allowing a minimum digit/digit* sensing potential to
approximate ground. Decreasing the second potential to a third
potential at the initiation of the precharge cycle effects a
decrease in the equilibrate potential of the digit lines, thereby
increasing the "high logic window" as reflected in an increase in
cell margin and a decrease in soft error rate (SER).
Inventors: |
Chern; Wen-Foo (Colorado
Springs, CO) |
Assignee: |
Micron Technology, Inc. (Boise,
ID)
|
Family
ID: |
25012925 |
Appl.
No.: |
07/749,247 |
Filed: |
August 23, 1991 |
Current U.S.
Class: |
327/51; 326/57;
326/59; 327/362 |
Current CPC
Class: |
G11C
7/06 (20130101); G11C 11/4091 (20130101) |
Current International
Class: |
G11C
11/409 (20060101); G11C 7/06 (20060101); G11C
11/4091 (20060101); H03F 003/45 (); H03K
019/02 () |
Field of
Search: |
;307/473,491,355,530,451,542,263 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Miller; Stanley D.
Assistant Examiner: Wambach; Margaret Rose
Attorney, Agent or Firm: Collier; Susan B.
Claims
What is claimed is:
1. A method for effecting a potential at a sense node
comprising:
a) charging a control input node of an initial electrical device
toward a supply potential by coupling said control input node to a
supply node through an actuated first switching device, said supply
node capable of accepting said supply potential;
b) isolating the sense node from said supply node and a reference
node, said reference node connectable to a reference potential;
c) charging the sense node to a generated potential by coupling the
sense node to a generating means;
d) isolating the sense node from said generated potential;
e) isolating said control input node from said supply node by
deactuating said first switching device;
f) actuating a second switching device to discharge said generated
potential on the sense node through said initial electrical device
and said second switching device, the sense node discharged to a
first potential substantially equal to said reference
potential;
g) pulling the sense node to a second potential equal to said first
potential plus at least a threshold voltage of said initial
electrical device;
h) maintaining said second potential; and
i) discharging said second potential to a third potential less than
said second potential wherein said third potential is not equal to
said first potential.
2. The method as specified in claim 1, wherein said pulling the
sense node to said second potential further comprises electrically
coupling the sense node to said supply node.
3. The method as specified in claim 1, further comprising effecting
said first, second and third potentials during said isolating of
the sense node from said generating means.
4. The method as specified in claim 1, further comprising:
a) generating said first and second potentials during an active
cycle of a dynamic random access device; and
b) generating said third potential during a precharge cycle of said
dynamic random access device.
5. The method as specified in claim 1, wherein said maintaining
said second potential further comprises:
a) preventing a leakage current between the sense node and said
control input node; and
b) limiting a current through said initial electrical device due to
a dissipation of a potential present at said control input node,
during said isolating of said control input node from said supply
node, said potential present at said control input node approaching
a potential of the sense node.
6. The method as specified in claim 1, wherein said generating said
third potential further comprises actuating a final electrical
device subsequent to effecting said second potential and during
said isolating of said control input node from said supply node and
during said coupling of the sense node to said supply node, said
final electrical device conducting more current than said initial
electrical device during said generating said third potential, thus
effecting said third potential equal to said reference potential
plus at least a voltage loss across said final electrical
device.
7. The method as specified in claim 6, wherein said effecting said
third potential further comprises actuating said second switching
device in conjunction with said actuating said final electrical
device, said third potential being equal to said reference
potential plus a sum of said voltage loss across said final
electrical device and a voltage loss across second switching
device.
8. The method as specified in claim 1, further comprising
activating said first switching device in order to directly couple
said control input node to said supply potential during the
activation of said second switching device thereby discharging said
second potential to said third potential through said second
switching device and said initial electrical device, said third
potential being equal to said reference potential plus a sum of a
voltage loss across said initial electrical device and a voltage
loss across said second switching device.
9. The method as specified in claim 8, further comprising
activating said first switching device with a row address strobe
signal of a dynamic random access device.
10. The method as specified in claim 1, wherein the method further
comprises repeating steps a)-f) of claim 1.
11. The method as specified in claim 10, further comprising
reducing said generated potential by effecting said third potential
at the sense node prior to charging the sense node to said
generated potential.
12. The method as specified in claim 1, further comprising
electrically coupling the sense node to a pair of sense lines
through a pair of cross-connected transistors, said pair of
cross-connected transistors being cross-connected such that a
control terminal of each transistor of said pair is connected to a
first terminal of the other transistor of said pair, a second
terminal of each transistor connected to the sense node.
13. The method as specified in claim 12, wherein said effecting
said first, second and third potentials further comprises
performing, with signals independent of the sense lines, the
following steps:
a) said coupling said control input node to said supply node;
b) said isolating the sense node from said supply node;
c) said coupling the sense node to said generating means;
d) said isolating the sense node from said generated potential;
e) said isolating said control input node from said supply
node;
f) said actuating said second switching device to discharge the
sense node to said first potential;
g) said pulling the sense node to said second potential;
h) said maintaining said second potential; and
i) said discharging said second potential to said third potential.
Description
BACKGROUND OF THE INVENTION
Present dynamic random access memory (DRAM) technology uses various
materials which are electrically either conductive, insulating or
semiconducting, although the completed semiconductor circuit device
itself is usually referred to as a "semiconductor." One of the
materials used is silicon, which is used as either single crystal
silicon, amorphous silicon, or as polycrystalline silicon material,
referred to as polysilicon or "poly" in this disclosure.
The memory cell typically stores a high logic level, "1," or a low
logic level, "0." Since the memory cell utilizes a capacitor to
store a charge representing the logic level, there is a possibility
of leakage as a result of the capacitor discharging. There is no
leakage associated with the low logic level since there is not a
potential available to charge the cell to a higher potential. In
contrast, when a high logic level is stored, leakage will
eventually reduce the charge stored on the capacitor to a low logic
level. A constant refresh is typically utilized to restore the high
logic level.
In the operation of certain semiconductor circuit devices, such as
dynamic random access memories (DRAMs), it is necessary to draw
down the latch node (or the sense node) of the sense amplifier to a
certain low potential, for example, a potential of V.sub.SS or
V.sub.TN. The biasing of this node enables the sense amplifier to
sense a differential in potentials between potential sources, such
as between digit and digit* lines (sense lines). It is advantageous
to very rapidly bring the potential of the node to the low value in
order to reduce the time for the sense amplifier to detect the
differential in potential levels of the digit and digit* lines.
In one prior art technique, the sense amplifier was strobed to a
ground potential and the substrate was pumped to -2.5 V with
respect to ground. The pumping of V.sub.SS to -2.5 V resulted in
current consumption which would have been unnecessary if substrate
was set to be equal to ground.
If the sense amplifier node were connected through an electrical
device to ground, such as a diode, then the sense amplifier node
would go in potential to a level of ground plus V.sub.T of the
electrical device with the substrate grounded. This achieves the
same effect as the case where the substrate is pumped to 2.5 V. As
the potential of the node approached ground plus V.sub.T, the
change in potential would tend to slow, resulting in the potential
of the node hyperbolically approaching ground plus V.sub.T. On the
other hand, if the node was connected by a transistor to ground,
then the potential of the node would rapidly drop past the desired
ground plus V.sub.T and settle at ground potential. It would be
desirable to have the potential of the node drop rapidly, as in the
case of a transistor connection, but settle at a potential of
ground plus V.sub.T. Although an electrical device having a high
threshold voltage reduces leakage current by increasing the
potential of the sense node, it also reduces the high logic level
that can written back to the cell.
U.S. Pat. No. 4,897,568, Active Up-Pump for Semiconductor Sense
Lines, describes circuitry achieving an initial rapid drop in
potential at the sense node with the sense node settling at a
potential of ground plus V.sub.T. The circuitry described in U.S.
Pat. No. 4,897,568 allows the sense node to be charged to V.sub.CC
/2 during a precharge cycle for equilibration of the digit
lines.
If the equilibration potential is reduced it follows that the
minimum high level voltage parameter of the high logic state may
also be reduced proportionally. Input data of a lower potential
will be perceived as a relative high when compared to the lower
equilibration potential. Thus potentials that were a marginally
high logic state for an equilibration potential of V.sub.CC /2 are
seen as a high logic state when the equilibration potential is less
than V.sub.CC /2.
By widening the "high logic window" the reliability of the device
is increased. The "high logic window" is the range of potentials
which appear as a high logic level to a memory device. The window
is defined by minimum and maximum voltage parameters of the high
logic signal.
The cell signal is defined as the potential stored on the memory
storage capacitor of a memory device. The cell margin is defined as
the difference in potential between the cell signal and the
potential of the digit/digit* lines of the memory device. The cell
margin can be increased by retaining a given cell signal and
decreasing the equilibrate potential of the digit lines. A larger
cell margin increases the reliability of a memory device and
reduces the soft error rate (SER). The SER is the number of errors
experienced by a memory device during a fixed unit of time due to
factors other than the memory device itself. The most common factor
causing soft error is radiation.
SUMMARY OF THE INVENTION
The invention is a method for providing multi-level potentials at
the sense node of a sense amplifier. The multi-level potentials
effect optimal sensing of differential signals, minimal power
requirements, increased reliability as a result of widening of the
"high logic window," and reduction of the SER as a result of
increasing the high cell margin.
Voltage sensing brings a sense node to a potential of V.sub.SS plus
V.sub.T by first grounding the node to a first potential equal to a
reference potential, V.sub.SS, and then floating the node to a
substantially stabilized second potential equal to the reference
potential plus a threshold voltage, V.sub.T, of an electrical
device through which leakage current is pumped. The second
potential is then decreased to a third potential, the third
potential is equal to the first potential plus a delta voltage A
having a value less than the threshold voltage. The third potential
is generated by the multi-level potential generating circuit in
response to an inactive row address strobe (RAS) signal and an
active sense signal at the initiation of a precharge cycle of the
sense amplifier. The portion of the multi-level potential
generating circuit responsive to the inactive RAS signal and active
sense signal discharges the sense node to a potential less than the
second potential.
The voltage sensing herein described typically is utilized in order
to bias digit lines during the active cycle at the initiation of a
precharge cycle of a DRAM device. Read and write operations are
typically performed during the active cycle. The second potential
reduces current leakage of the memory cell without utilizing an
electrical device having a high threshold voltage. The initial
momentary discharge of the sense node to the first potential allows
the sense amplifier to behave like a conventional sense amplifier
during initial sensing, thereby allowing a minimum digit/digit*
sensing potential to approximate ground. The final reduction of the
sense node to the third potential at the initiation of the
precharge cycle effects a decrease in the equilibrate voltage of
the digit lines during a precharge cycle, thereby reducing the
minimum high logic level voltage parameter, increasing the "high
logic window," and increasing the reliability of the device.
Reducing the potential of the sense node to the third potential
also increases the high logic level that can be written back to the
cell, increases the cell margin and reduces soft error rate.
In conclusion, the invention effects a maximum cell signal and cell
margin for both the high, 1, and low, 0, logic level at a tri-level
sense node while minimizing leakage current. At the onset of the
precharge cycle, the sense node potential is purposely reduced from
V.sub.SS plus V.sub.T to V.sub.SS plus a delta voltage A less than
V.sub.T, causing the low cell margin to reduce by the same amount
from V.sub.SS plus V.sub.T to V.sub.SS plus the delta voltage A.
This reduction is effected prior to the activation of the wordline.
The digit generation of the third potential lowers the equilibrate
potential of the sense lines by one half the change in voltage
between the second potential and the third potential. The change in
voltage between the second potential and third potential will be
called the delta voltage B. The gain in the low cell margin is
equal to one half the delta voltage B. Since the equilibrate
potential is reduced by one half the delta voltage B, the gain in
the high cell margin is also one half the delta voltage B.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 depicts the active cycle circuit portion of the multi-level
potential generating circuit of the invention.
FIG. 2 graphically depicts the potentials at the sense node in the
prior art and in the present embodiment of the invention in
relation to control signals.
FIG. 3 is the circuit of FIG. 1 modified to depict a first
embodiment of the invention comprising a precharge circuit
portion.
FIG. 4 is the circuit of FIG. 1 modified to depict a second
embodiment of the invention comprising a precharge circuit
portion.
FIG. 5 is the circuit of FIG. 1 modified to depict a third
embodiment of the invention comprising a precharge circuit
portion.
DETAILED DESCRIPTION OF THE INVENTION
In the preferred embodiment each of the circuit elements shown and
described is formed as a part of a semiconductor circuit chip. The
chip is typically utilized on an electronic circuit board. The
described circuit functions find particular utility when integrated
onto the chip, although it is possible to utilize the invention as
one or more separate circuit elements.
Referring to FIG. 1, a sense amplifier consists of a plurality of
cross-coupled metal-oxide semiconductor field effect transistors
(MOSFETs) 1, 2, 3, and 4 for detecting differential voltage (EMF)
levels on digit 5 and digit* 6 lines (sense lines).
The n-channel MOSFETs 3 and 4 are connected at their sources to a
sense node 7, which functions as a low level voltage (EMF) source
and their gates are cross-coupled to each other's drains. Their
drains are connected to the digit 5 and digit* 6 lines
respectively, so that their gates are responsive to the opposite
digit 5 or digit* 6 lines in order that they may sense the
differential potentials on the digit 5 and digit* 6 lines.
Likewise, the sources of p-channel MOSFETs 1 and 2 are connected to
a pull-up amplifier 8 and the drains of transistors 1 and 2 are
connected to the digit 5 and digit* 6 lines, respectively. The
gates of transistors 2 and 1 are cross-coupled to the digit 5 and
digit* 6 lines respectively, in order that transistor 1 and 2 can
sense differential high levels on the digit 5 and digit* 6
lines.
The pull-up amplifier 8 conducts from the V.sub.CC to transistors 1
and 2 in order to restore "one" or high logic levels in the array
to their full potential after a "read" operation or during a
refresh cycle. This helps to restore the "one" level of the signal
which had just been read.
In order to bring the sense node 7 to a desired potential, an N
latch charge pump, which functions as a pull-down amplifier, must
conduct current from the sense node 7. If the N latch charge pump
conducts current to the ground through a device (such as a diode)
which has a threshold voltage (V.sub.T), the potential at the sense
node 7 will slowly pump down to a potential of ground plus
V.sub.T.
The speed that the sense node 7 is pumped down controls the time
required to read the individual cells 9 accessed by switches 10 in
the memory array, and consequentially the access speed. The access
speed is generally considered to be the speed of the device.
The operation of the sense node 7 at a potential of ground plus
V.sub.T reduces the leakage current thus increasing maximum time
between refresh cycles and the reliability of the part. The cell
margin of the part is reduced, however, because the minimum
operating voltage V.sub.CC is increased due to the increase in the
sense node potential.
The invention increases the cell margin in two steps. First, the
sense node 7 is conducted directly to ground potential before being
permitted to float up to a potential of ground plus V.sub.T. The
sense node is then maintained at approximately the level of ground
plus V.sub.T, rather than continuing to the low ground potential.
In other words, the sense node potential is first brought rapidly
to a potential close to ground, decreasing access time and
increasing the operating margin, and then the sense node potential
increases to a potential of ground plus V.sub.T. This maximizes the
time between refresh cycles.
Second, the sense node potential of ground plus V.sub.T is reduced
at the end of the active cycle and at the initiation of the
precharge cycle. This final reduction of the sense node potential
is precipitated by an inactive row address strobe (RAS) signal. By
reducing the sense node voltage just prior to equilibration the
equilibrate potential is lowered. The lower equilibrate voltage
increases the "high level logic window," increases the one's level
margin, and increases the high logic level that can be written back
to the cell, thereby increasing the reliability of the chip.
The invention is a multi-level potential generating circuit for
generating first, second, and third potentials at the sense node 7.
Thus, the multi-level potential generator of the invention replaces
the conventional pulldown amplifier connected to sense node 7. The
sense node 7 facilitate sensing of data by the sense amplifier in a
dynamic random access memory (DRAM) device. The second potential is
greater than the first potential. The third potential lowers the
potential of the sense node 7 from the second potential to a
potential equal to or greater than the first potential. The third
potential effects a decrease in the equilibrate potential.
FIG. 2 compares the potentials generated at the sense node by the
invention, represented by solid line A, to the potentials at the
sense node in the prior art, represented by dotted line B. The
first, second and third potentials at the sense node are shown in
relation to row address strobe (RAS), equilibrate, and sense
signals, shown in timing diagram format. Although voltages are
vertically expressed and time is horizontally expressed, the
voltages at the sense node are shown to explain the operation of
the multi-level potential generating circuit and do not represent
actual measurements of voltage over time. A delta voltage A is
shown as the change in voltage between the first and third
potentials, and delta voltage B is shown as the change in voltage
between the second and third potentials.
The active cycle circuit portion 11 of the multilevel potential
generating circuit of the DRAM device is shown in FIG. 1. During a
precharge cycle an active equilibrate signal at an equilibrate
terminal 12 activates transistor 15 and allows an equilibrate
potential generator connected to terminal 16 to charge sense node 7
and digit/digit* lines 5 and 6 to an equilibrate potential. Those
skilled in the art are familiar with various equilibrate means for
generating an equilibrate potential. The actual equilibrate
potential generator implemented by the designer is optional to the
present invention and various equilibrate potential generators may
be used. The active equilibrate signal also activates transistor 20
and precharges common node 24 to a potential equal to V.sub.CC
minus the voltage loss, V.sub.T20, across transistor 20. During the
precharge cycle the sense terminal 27 accepts an inactive sense
signal, isolating sense node 7 from a reference potential at
reference node 30. A diode configuration comprising transistors 38
insures that there is no leakage current between nodes 7 and
24.
During an active cycle the active circuit portion 11 accepts an
active sense signal at the sense terminal 27 and activates
transistors 45 and 50, since the gate of transistor 40 is biased at
V.sub.CC -V.sub.T20. The sense node 7 now has a direct path to the
reference potential through transistors 45 and 40. Thus the active
sense signal allows the sense node 7 to discharge to a first
potential substantially equal to the reference potential which is
substantially equal to a ground potential.
The active sense signal also activates transistor 55, thereby
biasing the diode configuration comprising transistor 60.
Transistors 60 and 55 are much smaller than transistor 45 in series
with transistor 40 and therefore the high potential part of the
circuit (60 and 55) has a relatively high internal resistance.
Because series transistors 55 and 60 have much more resistance than
transistor 45 and 40, the sense node 7 is floated only to a ground
potential plus the threshold voltage of transistor 40. If the sense
node 7 were to be left floating in a long RAS low cycle, the sense
node 7 may leak to ground potential. The sense node 7 is brought to
V.sub.T above ground as a result of the circuit path which includes
transistors 55 and 60 being highly resistive. Therefore,
substantially more current leaks through transistor 45 until the
potential of the sense node 7 approaches V.sub.T above ground
potential. Also the potential at node 24 regulates the gating of
transistor 40, such that current through transistor 40 is limited
when the potential at node 24 approaches the potential of sense
node 7.
Therefore, transistor 55 pulls the sense node 7 ground to V.sub.T
above ground, and maintains the sense node 7 at V.sub.T above
ground over long periods of the active cycle. If transistor 55 was
not present, the sense node 7 would float down to ground. The
potential of ground plus the threshold voltage of transistor 40 is
the second potential generated by the multi-level potential
generator circuit.
The equilibrating potential during precharge is reduced by lowering
the voltage of the sense node 7 to the third potential just prior
to equilibration of the digit lines in the precharge cycle. By
reducing the potential of the sense node 7 by a delta voltage B,
the equilibrate potential is reduced by an amount equal to the
delta voltage B divided by two. The invention comprises three
embodiments of a precharge cycle circuit to reduce the sense node
potential to the third potential. Each of the three embodiments
utilizes preexisting circuit signals to generate the third
potential. The circuit signals comprise a RAS signal transitioning
to an inactive logic state, in this case high, in conjunction with
a sense signal having an active logic state, in this case high. The
duration of the active sense signal controls the duration of the
third potential at the sense node 7. When the sense signal
transitions low, the RAS signal transitions high, and the
equilibrate signal transitions high, the sense node 7 is
equilibrated to the reduced equilibration voltage due to the third
potential generated prior to equilibration by the invention.
Therefore, the equilibrate potential is reduced without relying on
the equilibrate potential generator to do the work.
In the first embodiment the multi-level potential generating
circuit comprises active cycle circuit 11 of FIG. 2 modified to
include a precharge cycle circuit 66 as shown in FIG. 3. The
precharge cycle circuit 66 comprises a transistor 70 interposed
between the sense node 7 and reference node 30. The gate terminal
of transistor 70 is connected to the output of an inverter 75, the
input of inverter 75 is connected to the output of an NAND gate 80
having a RAS input terminal 81 and the sense input terminal 27 for
accepting a RAS signal and the sense signal respectively. The
transistor 70 remains deactuated during the active cycle since the
active RAS signal is low. At the end of the active cycle and at the
initiation of the precharge cycle, RAS transitions high. Since the
sense signal remains high for a period of time after RAS is
deactivated, the transistor 70 is actuated and the sense node 7 is
brought to the third potential. The third potential is greater than
or equal to the first potential and less than the second potential.
It is equal to the first potential plus delta voltage A, the
voltage loss across transistor 70. Therefore, the value of the
third potential is determined by the size of transistor 70 and the
length of time node 7 is discharged through transistor 70. The
voltage difference between the second and third potentials is the
delta voltage B. The sense signal is deactivated during precharge
and transistor 70 is deactivated and the sense node 7 equilibrates
to a potential equal to a value of the original equilibrate
potential minus half of the delta voltage B.
A second embodiment, shown in FIG. 4, comprises a transistor 85
connected in parallel to transistor 40. The precharge cycle circuit
comprises transistors 45 and 85. The gate of transistor 85 is
connected to RAS terminal 86. Transistor 85 is actuated with an
inactive RAS signal and transistor 45 is activated with an active
sense signal. Activated transistors 45 and 85 allow the potential
of the sense node 7 to attain the third potential which approaches
the reference potential. The third potential is greater than the
first potential and less than the second potential. It is equal to
the first potential plus the voltage loss across transistors 45 and
85. The effect of transistor 40 is negligible since the gate
voltage on transistor 85 induces a large current through transistor
85, discharging node 7. As node 7 discharges, the current through
transistor 40 decreases. Therefore, the value of the third
potential is determined by the size of transistors 45 and 85, and
the length of time node 7 is discharged through transistors 45 and
85. The voltage difference between the second and third potentials
is the delta voltage B. When the sense signal is deactivated,
transistor 45 is deactivated, transistor 85 is in effective, and
the sense node 7 equilibrates to a potential equal to a value of
the original equilibrate potential minus half of the delta voltage
B.
In the third embodiment, shown in FIG. 5, the gate of transistor 20
is connected to the RAS terminal 87 rather than the equilibration
terminal. The function of the equilibration signal to actuate
transistor 20 and precharge node 24 is now accomplished by the
inactive RAS signal during precharge.
At the initiation of the precharge cycle, RAS returns to the
inactive logic state and the sense signal is in an active logic
state. The active RAS signal activates transistor 20 which
increases the voltage on node 24 and consequently the current
through transistor 40, since transistors 40 and 45 are activated by
the active logic state of the sense signal. The increase in current
through transistor 40 decreases the voltage on node 7 to the third
potential. The third potential is greater than or equal to the
first potential and less than the second potential. It is equal to
the reference potential plus the voltage loss across transistors 40
and 45. The voltage difference between the second and third
potentials is the delta voltage B. The sense signal is deactivated
during precharge and transistor 70 is deactivated, transistor 40 is
ineffective, and the sense node 7 equilibrates to a potential equal
to a value of the original equilibrate potential minus half of the
delta voltage B. In the third embodiment, the precharge cycle
circuit comprises transistors 20, 40 and 45.
FIG. 2 depicts the potential of the sense node 7 lowered to
hyperbolically settle to a quiescent voltage, but only after the
potential is within a desired voltage range. The ability of the
multi-level potential generator circuit to first conduct to ground
potential at 100 and then to conduct to a potential of ground plus
V.sub.T at 105 causes the hyperbolic portions 110 of Curves A to be
truncated at the desired potential at 105 prior to the final
reduction to the third potential 115 and just prior to
equilibration of the digit lines at 120. It can be seen from the
figure that the equilibrate potential is reduced from the
equilibrate potential of the prior art. The charge in the
equilibrate potential is equal to half of the change in potential
between the second potential to the third potential.
In all three embodiments the sense node 7 is equilibrated during a
precharge cycle to a potential lower than the equilibrate potential
provided by the equilibrate potential generator. The decreased
equilibrate potential is a result of the generation of the third
potential by the multi-level potential generation circuit of the
invention. The invention increases the cell margin increasing
reliability reflected in a reduction of the SER.
Unless otherwise specified, the transistors comprising the
invention are n-channel MOSFETs. The diode configurations may
comprise more than one transistor configured as a diode.
Where electrical functions and connections are described, it is
understood that it is possible, within the scope of this invention,
to use equivalent circuits to perform the described functions. As
an example, a transistor can be used as a diode or resistor.
Likewise, two electrical components which are connected may have
interceding components which physically separate the two
components. "Connected" is therefore intended to include components
which are in electrical communication despite intervening
components.
The invention has been described in terms of a DRAM, the circuit
has utility in other circuits where it is desired to rapidly reduce
voltage and then permit the voltage to remain at a desired level
before reducing it to a third level. Modification to the circuitry
may also be implemented without detracting from the concept of the
invention. The actual implementation is not critical to the concept
of the invention. Accordingly, the invention should be read as
limited only by the claims.
* * * * *