U.S. patent number 3,919,589 [Application Number 05/520,879] was granted by the patent office on 1975-11-11 for electroluminescent cell with a current-limiting layer of high resistivity.
This patent grant is currently assigned to RCA Corporation. Invention is credited to Joseph John Hanak.
United States Patent |
3,919,589 |
Hanak |
November 11, 1975 |
Electroluminescent cell with a current-limiting layer of high
resistivity
Abstract
A transparent conductive coating overlaps a transparent
substrate. A layer of an electroluminescent material, such as zinc
sulfide doped with manganese and copper, partially covers the
conductive coating. A resistive cermet film overlaps the
electroluminescent layer and an electrode is attached to the cermet
film. The cermet is of a composition so as to exhibit a non-linear
currentvoltage characteristic and includes conductor particles
therein which have an average size of from about 10A to about
20A.
Inventors: |
Hanak; Joseph John (Mercer,
NJ) |
Assignee: |
RCA Corporation (New York,
NY)
|
Family
ID: |
26995809 |
Appl.
No.: |
05/520,879 |
Filed: |
November 4, 1974 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
|
|
348623 |
Apr 6, 1973 |
|
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Current U.S.
Class: |
315/71;
313/506 |
Current CPC
Class: |
H05B
33/22 (20130101); H05B 33/26 (20130101) |
Current International
Class: |
H05B
33/26 (20060101); H05B 33/22 (20060101); H05B
033/02 () |
Field of
Search: |
;313/498,506,509
;315/71,58 ;338/308 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Demeo; Palmer C.
Attorney, Agent or Firm: Bruestle; Glenn H. Silverman; Carl
L.
Government Interests
Background of the Invention
The invention herein described was made in the course of or under a
contract or subcontract with the Department of Army.
Parent Case Text
This application is a continuation-in-part of application Ser. No.
348,623 filed Apr. 6, 1973, and now abandoned.
Claims
I claim:
1. An electroluminescent cell comprising:
a. a substantially transparent first electrode,
b. a layer of an electroluminescent material on said first
electrode,
c. a resistive film of cermet on said layer having a per cent
conductor volume of from about 2% to about 20% such that said film
exhibits a non-linear current-voltage characteristic and said
conductor includes particles having an average size of from about
10A to about 20A, and
d. a second electrode attached to said film.
2. The electroluminescent cell as defined in claim 1, wherein said
transparent electrode is disposed on a substantially transparent
substrate.
3. The electroluminescent cell as defined in claim 2, wherein said
first electrode comprises a conductive oxide compound.
4. The electroluminescent cell as defined in claim 2, wherein said
layer of electroluminescent material comprises zinc sulfide doped
with manganese and copper.
5. The electroluminescent cell as defined in claim 4, wherein the
composition of said cermet resistive film comprises a conductive
metal oxide and an electrical insulator.
6. The electroluminescent cell as defined in claim 5, wherein said
metal oxide is In.sub.2 O.sub.3 or SnO.sub.2.
7. The electroluminescent cell as defined in claim 4, wherein the
composition of said cermet resistive film comprises a metal and an
electrical insulator.
8. The electroluminescent cell as defined in claim 7, wherein said
metal is Au, Pt, Cr, Ni, Al, Mg, W or Ag.
9. The electroluminescent cell as defined in claim 8, wherein said
metal is Ag.
10. The electroluminescent cell as defined in claim 9, wherein said
insulator is silicon dioxide.
11. The electroluminescent cell as defined in claim 10, wherein the
composition of Ag in said cermet ranges from about 5% to about 15%
of said cermet by volume.
12. The electroluminescent cell as defined in claim 11, wherein the
composition of Ag in said cermet is about 11% of said cermet by
volume.
13. The electroluminescent cell as defined in claim 8, wherein said
metal is Ni and the composition of Ni in said cermet ranges from
about 9% to about 12% of said cermet by volume.
14. The electroluminescent cell as defined in claim 7, wherein said
electrical insulator is borosilicate glass, Al.sub.2 O.sub.3,
SiO.sub.2, MgO, TiO.sub.2, BaTiO.sub.3, or CaF.sub.2.
Description
This invention relates to electroluminescent cells and particularly
to electroluminescent cells made with resistive cermet films with
the cermet films exhibiting nonlinear current-voltage
characteristics.
It has been long recognized that the use of electroluminescent
materials may provide the simplest means for obtaining a flat panel
display, such as for use in television receivers. However, the
future of electroluminescent displays depends on continued progress
in the development of materials and electroluminescent cell
structures.
One invention that greatly advanced the development of
electroluminescent devices is disclosed in U.S. Pat. No. 2,880,346
issued to Nicoll et al. on Mar. 31, 1959. That patent disclosed the
use of a resistance in series with the electroluminescent
particles. The resistance limited current flow to a value below
that which would cause the particles to burn out. Therefore, if an
individual electroluminescent particle broke down under the
influence of the applied voltage, the resistance in series with the
particle would limit the current flow through the particle to a
value that would prevent burn out of the particle and thereby
prevent the shorting of the applied voltage through that particle
and around the remaining particles.
The present invention provides a decided improvement in the
efficiency, life expectancy, and light output of electroluminescent
cells that use resistive layers.
SUMMARY OF THE INVENTION
An electroluminescent cell includes a substantially transparent
first electrode and a layer of an electroluminescent material on
the first electrode. A resistive film of cermet is on the layer of
electroluminescent material. A second electrode is attached to the
resistive film. The cermet film has a per cent conductor volume
such that the film exhibits a non-linear current-voltage
characteristic. The conductor particles in the cermet film have an
average size of from about 10A to about 20A.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is an edge view of an electroluminescent cell constructed in
accordance with the present invention.
FIG. 2 is a graph showing the average conductor particle size as a
function of the cermet composition.
FIG. 3 is an electron micrograph of cermet resistive films of
varying compositions including one suitable for use in the
electroluminescent cell of the present invention.
FIG. 4 is a graph which indicates the current-voltage
characteristic of resistive cermet films which are suitable for use
in the electroluminescent cell of the present invention.
FIGS. 5, 6, 7, and 8 are graphs which indicate the characteristics
of the electroluminescent cell of FIG. 1 as a function of the
cermet composition.
DETAILED DESCRIPTION OF THE INVENTION
The electroluminescent cell structure of the present invention is
designed primarily for dc or pulsed dc operation. In such a cell
structure, upon the application of a voltage between two electrodes
which are disposed on opposite sides of an electroluminescent
layer, an electric current, i.e., a transport current, flows
through all layers of the cell between the electrodes. The current
continues to flow until the applied voltage is removed. The
intensity of the light emitted from the cell is proportional to the
current. Generally, the dc electroluminescent cell performs only
with one polarity of applied voltage. With the opposite polarity,
the cell is too conducting to produce electroluminescence and tends
to burn out with high applied voltages, i.e., poor ac performance.
The dc electroluminescent cell structure is to be distinguished
from one designed for ac operation in which an electrically
insulating layer is disposed between the electroluminescent layer
and the electrode on one or both sides of the electroluminescent
layer. When a voltage is applied in the ac cell structure, there is
no transport current through the cell, as in the dc cell structure.
When the electric field becomes sufficiently large, a displacement
current only is established through the electroluminescent layer.
The displacement current flows only during a short time during each
half-cycle, i.e., if a longer pulse is applied, the displacement
current terminates. Electroluminescent cells designed for ac
operation, i.e., utilizing the previously described insulating
layer, cannot be successfully operated with dc current in view of
the previous discussion.
Referring initially to FIG. 1, one form of an electroluminescent
cell of the present invention is generally designated as 10. The
cell 10 includes a transparent substrate 12 covered by a
transparent conductive coating 14. A layer 16 of an
electroluminescent material partially covers the conductive coating
14 and a first electrode 18 is attached to a noncoated portion of
the conductive coating 14. The layer 16 of electroluminescent
material is covered with a resistive cermet film 20 and a second
electrode 22 is attached to the film 20.
Although the basic structure of the electroluminescent cell 10 is
well known in the art, it is believed that the present invention is
the first use of a resistive cermet film to provide the current
limiting function for the cell.
In a preferred embodiment, the electroluminescent cell 10 comprises
a transparent glass plate substrate 12 coated with a transparent
conductive coating 14, such as In.sub.2 O.sub.3, SnO.sub.2, or a
mixture thereof. A thin, e.g., 1.5 micron, electroluminescent layer
16 of zinc sulfide (ZnS) doped with manganese (Mn) and copper (Cu)
partially covers the conductive coating 14. The electroluminescent
layer 16 is covered with a thin, e.g., 3.0 micron, cermet film 20
comprising SiO.sub.2 and Ag or SiO.sub.2 and Ni. The percentage of
Ag in the Ag.sub.x (SiO.sub.2).sub.1.sub.-x cermet by volume can
range from about 5% to about 15% with about 11% being preferred.
The percentage of Ni in the Ni.sub.x (SiO.sub.2).sub.1.sub.-x
cermet by volume can range from about 9% to about 12%. It is
preferred that the cermet thickness is greater than the
electroluminescent layer thickness. It has been found that the
electroluminescent cells of the present invention are most
successful when the conductor particles in the cermet resistive
film are of a size such that they are disposed as substantially
separate particles in an insulating matrix. An average conductor
particle size of about 10A to about 20A and a conductor volume of
from about 2% to about 20% have been found to give good results.
Metal electrodes 18 and 22, such as Al, or Al coated with Cr, or Al
coated with Cr and Au, are deposited on the conductive coating 14
and the cermet film 20, respectively.
It is important to note that the electroluminescent cell of the
present invention requires a film type cermet. i.e., such that the
composition and particle size can be controlled. It is known in the
art that a sputtered or evaporated cermet film can be deposited
with the precision necessary to obtain a 2% to 20% volume of
conductor with the conductor particles therein having an average
size of from about 10A to about 20A. For example, U.S. Pat. No.
3,843,420, issued Oct. 22, 1974, to Gittleman et al. describes a
method of sputtering which is useful in obtaining cermet films for
the electroluminescent cells of the present invention. However, it
is preferable to heat the substrate to approximately 200.degree.C
to 300.degree.C during the deposition of the cermet film so as to
promote film to electroluminescent layer adherence. Thus, the
method enables one to obtain the desired cermet resistive film as
shown in FIG. 2 in which the average conductor particle size
d.sub.o is shown as a function of the volume fraction x of the
conductor in the cermet.
In construction of the preferred embodiment, the conductive coating
may be applied by any one of several known techniques, such as by
painting, evaporation, or sputtering, although evaporation is
preferred. Preferably, the electroluminescent layer is applied to a
coated glass.
It is presently believed that the reason the cermet resistive films
of the present invention perform better than the resistive layers
of the prior art involves the presence of "hot" electrons.
Electroluminescence in ZnS films has been shown to be caused by
"hot" electrons. Hot electrons are electrons which are generated by
high electric fields applied across materials with a large band
gap, such as ZnS, D.C. Krupka, Journal of Applied Physics, 43 476
(1972). The energy of these hot electrons may range from a few
tenths to a few electron volts. As these electrons pass through an
electroluminescent layer, e.g., ZnS, which contains luminous
centers such as Mn, Tb, Er, Dy, etc., the electrons impact and
ionize the centers, thereby displacing an electron from a given
energy level. When another electron falls back into this level,
light is emitted from the center.
In addition to the hot electrons it is presently believed that
there are also "thermal" electrons passing through the
electroluminescent layer with an energy of kT, where T is the
temperature in degrees Kelvin, which is less than that of the hot
electrons and which is of insufficient energy to produce
electroluminescence. It is also believed that the thermal electrons
are in majority, especially at high current densities, and that
they account for the low power efficiency in conventional
electroluminescent cells, e.g., ordinarily much less than 0.1%. The
thermal electrons are not only wasteful of power, but are also
detrimental to the life of the cells by causing local heating and
burnout.
Therefore, it is presently believed that the improved results
obtained in the electroluminescent cells of the present invention
are due to the presence of the cermet resistive film, i.e., the
cermet film favors the conduction of the previously described hot
electrons in preference to the thermal electrons so as to function
as a thermal electron filter.
It has been found that there are different kinds of conductivity in
cermet films which depend upon the film composition, temperature,
and applied electric field, e.g., P. Sheng, B. Abeles, and Y. Arie,
Physics Review Letters, 31, 44 (1973) and P. Sheng and B. Abeles,
Physics Review Letters, 28, 34 (1972). When prepared by sputtering
or by evaporation, it is possible to obtain cermet films having
extremely small conductor particles, e.g., down to about 5A, finely
dispersed in an insulating medium. The size of the conductor
particles and the thickness of the insulating medium separating
them are of critical importance in determining the conductivity
mechanism.
When the fraction of the conductor in the cermet is large, e.g.,
1.0 to 0.4, the conductor particles touch each other, as in FIGS.
3a and 3b in which an electron micrograph of an Au.sub.x (Al.sub.2
O.sub.3).sub.1.sub.-x cermet film is shown, and the conductivity is
similar to that of a conductor, i.e., the current voltage
characteristic is linear. When the fraction of the conductor falls
below about 0.4, the conductor particles begin to break apart to
clusters as shown in FIG. 3c. Upon further decrease of the
conductor content, the conductor particles become completely
separated, as in FIG. 3d, and the conductivity becomes similar to
that of a semiconductor, e.g., the current-voltage characteristic
for a Ni.sub.x (SiO.sub.2).sub.1.sub.-x cermet becomes non-linear,
as shown in FIG. 4.
Within this last range of composition, two types of conductivity
have been found to exist, low field and high field conductivity.
Low-field conductivity is the conductivity associated with the
conduction of thermal electrons and high-field conductivity is
associated with the conduction of higher energy electrons, i.e.,
hot electrons. The high-field conductivity is promoted by
decreasing the conductor content and/or by decreasing the
temperature. Thus, it is possible to preferentially conduct either
hot electrons or thermal electrons through the cermet film merely
by selecting the appropriate cermet composition and temperature,
i.e., a resistive cermet film can act as a filter for the unwanted
thermal electrons. It is this mechanism which appears to be
responsible for the unexpected improvement in the
electroluminescent cells of the present invention.
It has been found that the ideal cermet composition may vary for
different types of electroluminescent layers. Therefore, in order
to optimize the performance of the electroluminescent cell of the
present invention, a decision must be made as to what is the best
composition of cermet for a particular electroluminescent layer.
Since many materials may be used in constructing an
electroluminescent cell in accordance with the present invention
and all possible combinations of electroluminescent materials,
electrode materials and cermet compositions have not been tried,
the following procedure, which was used in constructing the
preferred embodiments, may be utilized. Basically, the method
comprises forming a plurality of electroluminescent cells in a row
on a single substrate bearing a film of electroluminescent
material, e.g., ZnS:Mn:Cu or ZnS:Mn, of constant composition
deposited on a layer of transparent conductive coating. In the
construction of the plurality of cells, the composition of cermet
in each cell is varied by the method described by J. J. Hanak et
al. in Journal of Applied Physics, 43, 1666, (1972), and J. J.
Hanak et al. in Journal of Applied Physics, 44, 5142, (1973). Each
of the cells can then be tested for light output, life expectancy,
and efficiency to determine which composition of cermet provides
the optimum cell. Once this composition is determined, further
cells may be constructed of the same materials and compositions as
used in the optimum cell. The results obtained indicated that some
cermet compositions unexpectedly worked better than the resistors
of the prior art.
Several electroluminescent cells of the present invention were
fabricated having a sputtered electroluminescent layer with a
constant composition and thickness. The electroluminescent layer
was a 1.mu.m thick ZnS layer, doped with 0.88 mole per cent of Mn.
The electroluminescent layer was coated with a layer of a Ni.sub.x
(SiO.sub.2).sub.1.sub.-x cermet, having a thickness of about
2.5.mu.m with x ranging from 0.04 to 0.19 for different
electroluminescent cells. The cells were tested at a constant
brightness of approximately 5 footlamberts as a function of the
cermet composition as shown in FIGS. 5-8.
The operating characteristics of the electroluminescent cells of
the present invention are shown in FIGS. 5, 6, 7, and 8 as a
function of the conductor content in the cermet. The applied
voltage, shown in FIG. 5, is dominated largely by the
electroluminescent layer at high conductor content in the cermet.
For low conductor content, the cermet film has a strong effect on
the voltage required to maintain constant brightness. This
variation in the applied voltage is due to the relative electrical
resistivity of the cermet and the electroluminescent layer, as
shown in FIG. 6.
Very high current was required for the highest conductor content
(19%) in the cermet layer, as shown in FIG. 7. However, the current
required to maintain constant brightness decreased rapidly with
decreasing conductor content and then leveled off. The power
efficiency of the electroluminescent cells, shown in FIG. 8,
increased correspondingly and reached a maximum at about 12% Ni.
According to FIG. 6, it is preferable for the electrical
resistivity of the cermet film to vary from about 0.3 to about 0.01
of the resistivity of the electroluminescent layer over the range
of optimum efficiency.
The use of cermet films, as in the present invention, has
unexpectedly improved the performance of the electroluminescent
cells to a much greater degree than the use of conventional
resistors such as painted carbon, nichrome, or silver paints, e.g.,
by a factor of one or more orders of magnitude, as shown in Table
I. The data of Table I was obtained with a sputtered
electroluminescent layer of ZnS:TbF.sub.3 containing about 1.5 mole
per cent TbF.sub.3 and having a thickness of about 1.2.mu.m. The
electroluminescent layer was coated with various prior art
resistive layers including a sputtered cermet film of the present
invention which consisted of a 2.mu.m thick layer of Ni.sub.x
(SiO.sub.2).sub.1.sub.-x containing about 10% Ni by volume. For
purposes of comparison, the electroluminescent layer was also
coated with a cermet resistor composition such as one described in
U.S. Pat. Nos. 2,924,540 and 3,052,573, which is commercially
available as Dupont Resistor Composition 7828 from E. I. DuPont De
Nemours and Co. (Inc.). Such a resistor has a sheet reistivity of
10.sup.4 ohm per square. The cells were tested with a pulsed dc
voltage using a pulse width of 40.mu.sec and a repetition rate of
480.mu.sec., i.e., 5% duty cycle. The maximum brightness was tested
at the maximum applied voltage above which the cell burned out. As
can be observed from the test results shown in Table I, the large
difference in electroluminescent performance of the
electroluminescent cells indicates that the cermet film prepared in
accordance with the present invention is not functioning merely as
a resistor.
Table I
__________________________________________________________________________
Comparison of Performance of ZnS:TbF.sub.3 Sputtered
Electroluminescent Cells Using Various Resistive Layers Maximum
Brightness Power Cell Half Resistive Layer Brightness at 215V
Efficiency Life at (fL) (fL) (%) 215V
__________________________________________________________________________
Sputtered Ni.sub.x (SiO.sub.2).sub.1.sub.-x 320 27 4.0 .times.
10.sup..sup.-2 400 hrs. (prepared in accordance with the present
invention) Cermet Resistor Composition 8 5 1.3 .times.
10.sup..sup.-4 2 min. Carbon 0.9 0.7 9.1 .times. 10.sup..sup.-6
<1 min. Silver paint 1.1 0.5 5.1 .times. 10.sup..sup.-7 <1
min. Nichrome 0 -- 0 --
__________________________________________________________________________
Referring again to Table I, it is important to note the the Cermet
Resistor Composition, e.g., Dupont Resistor 7828, includes
conductor particles therein which have an average particle size of
0.1 to 50 microns, where 1 micron is equal to 10,000A. As shown in
Table I, the performance of the electroluminescent cell with a
cermet film prepared in accordance with the present invention,
i.e., 2% to 20% conductor volume and 10A to 20A conductor particle
size, great greatly surpasses the performance of the
electroluminescent cell with the Cermet Resistor Composition in
which the conductor particles are of larger size. Also, the
electroluminescent cells of the present invention produced more
uniform light than the other electroluminescent cells. As
previously stated, for different electroluminescent layers,
different ranges of cermet composition and hence of particle size
may be necessary. However, the cermet composition should be such so
as to exhibit a non-linear current-voltage characteristic.
Although the electroluminescent cell of the present invention is
preferably operated in a dc mode, at least in the sense that a
current actually passes through the cell as previously described,
the electroluminescent cells of the present invention operate
similarly well with both polarities. In addition, the cells operate
well under ac excitation. In fact, the ac electroluminescent cell
life is improved over the dc cell life. With ac excitation,
transport current flows through the entire cell during each half
cycle so as to permit pulse width modulation of gray scale.
It should be pointed out that the results obtained in the
electroluminescent cells of the present invention are unexpected in
view of the prior art which typically suggests that the resistive
layer in the electroluminescent cell should have a resistivity in
the range of from about 10.sup.4 ohm-cm to 10.sup.6 ohm-cm and a
sheet resistivity of from about 10.sup.3 ohm per square to about
10.sup.8 ohm per square, e.g., U.S. Pat. No. 3,350,596 and U.S.
Pat. No. 2,800,346. In contrast, the electroluminescent cells of
the present invention preferably employ cermet resistive films
having a resistivity of about 10.sup.5 ohm-cm to about 10.sup.9
ohm-cm and a sheet resistivity of from about 10.sup.8 ohm per
square to about 10.sup.12 ohm per square.
In addition, an advantage of the cermet film of the present
invention was a noticable improvement in contrast. This advantage
probably occurred because the optimum cermet composition yielded a
somewhat nontransparent dark brown film that provided a dark
background for the emitted light. Also, the dark material, being a
good heat radiator, helps to maintain low temperature operation so
as to favor the conduction of the hot electrons, as previously
mentioned. This advantage, however, must be balanced with the fact
that some of the light produced is lost due to absorption by the
cermet.
In broad terms, the cermet film of the present invention is a
mixture of an electrical insulator and an electrical conductor. One
type of cermet within this definition is a mixture of metal
particles embedded in a dielectric matrix, such as ceramic. Cermets
made of ceramic and metal show little solubility between the
metallic phase and the ceramic phase at temperatures of preparation
and thus are heterogeneous materials wherein small metal grains are
embedded in an amorphous insulating matrix. As such, the properties
of cermets, such as electrical resistivity and magnetic
permeability, generally vary with the relative proportion of metal
and insulator present in the composition.
Materials that can be used as electrical insulators in the cermet
film of the present invention include borosilicate glasses,
aluminum oxide (Al.sub.2 O.sub.3), silicon dioxide (SiO.sub.2),
magnesium oxide (MgO), titanium dioxide (TiO.sub.2), barium
titanate (BaTiO.sub.3) and calcium fluoride (CaF.sub.2). Similarly,
materials that can be used as the metal in the cermet include gold
(Au), nickel (Ni), tungsten (W), platinum (Pt), chromium (Cr),
copper (Cu), aluminum (Al), magnesium (Mg), and silver (Ag). A
conductive metal oxide can be used in place of a metal in the
cermet. For example, the cermet can comprise a metal oxide, such as
indium oxide (In.sub.2 O.sub.3), and a ceramic, such as SiO.sub.2.
Slight changes in cermet composition have large effects on cermet
resistivity. While the magnitude of resistivity is important in
bringing about optimum performance of electroluminescent cells, it
appears unimportant which conductor is used.
Although the electroluminescent cell of the present invention has
been described as having a ZnS electroluminescent layer doped with
Mn and/or Cu and a ZnS layer doped with TbF.sub.3, it is apparent
that similar results would be observed with any other known
electroluminescent material as long as the proper cermet
composition was utilized. For example, electroluminescent materials
suitable for use in the electroluminescent cell of the present
invention include ZnS:ErF.sub.3, Ba.sub.2 ZnS.sub.3 :Mn, and
GaN:Zn. Thus, the electroluminescent cell of the present invention
provides greater brightness, efficiency, and life expectancy than
the electroluminescent cells which employ conventional resistive
films.
* * * * *