U.S. patent number 3,914,608 [Application Number 05/426,393] was granted by the patent office on 1975-10-21 for rapid exposure of micropatterns with a scanning electron microscope.
This patent grant is currently assigned to Westinghouse Electric Corporation. Invention is credited to Paul R. Malmberg.
United States Patent |
3,914,608 |
Malmberg |
October 21, 1975 |
Rapid exposure of micropatterns with a scanning electron
microscope
Abstract
A micropattern is rapidly located and produced with precision on
a major surface of a member with a scanning electron microscope.
The major surface of the member is prepared with an electron resist
layer. The electron beam of the scanning electron microscope is
located at successive coordinate address positions at the major
surface by address generator means and low speed deflection means
for irradiation of a precision pattern in the electron resist layer
by contiguous subscans. At each coordinate address, the electron
beam is moved through a subpattern about the coordinate address
position by a subscan generator means and high speed deflection
means. Preferably, the electron beam is rapidly stabilized at each
address position by generating compensating electrical signals
related to transient errors from the low speed deflection means on
inputting the address signals, and inputting the compensating
electrical signals to the high speed deflection means.
Inventors: |
Malmberg; Paul R. (Pittsburgh,
PA) |
Assignee: |
Westinghouse Electric
Corporation (Pittsburgh, PA)
|
Family
ID: |
23690627 |
Appl.
No.: |
05/426,393 |
Filed: |
December 19, 1973 |
Current U.S.
Class: |
250/311;
250/492.2 |
Current CPC
Class: |
H01J
37/3023 (20130101); H01J 37/1475 (20130101) |
Current International
Class: |
H01J
37/302 (20060101); H01J 37/147 (20060101); H01J
37/30 (20060101); H01J 029/00 () |
Field of
Search: |
;250/492,311,397 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Lawrence; James W.
Assistant Examiner: Anderson; B. C.
Attorney, Agent or Firm: Menzemer; C. L.
Government Interests
GOVERNMENT CONTRACT
The present invention was made in course of or under Government
Contract NAS 8-20770. The invention described herein was made in
the performance of work under said NASA contract and is subject to
the provision of Section 305 of the National Aeronautics and Space
Act of 1958, Public Law 84-568 (72 Stat. 435; 42 USC 2457).
Claims
What is claimed is:
1. Apparatus for rapid exposure of a precision micropattern on a
major surface of a prepared member with a scanning electron
microscope comprising:
A. a prepared member having a major surface;
B. a scanning electron microscope positioned to project a small
cross-sectional electron beam onto the major surface of the
member;
C. an address generator means for generating electrical signals
corresponding to successive coordinate addresses for exposing a
precision pattern at the major surface of the member in successive
subscans with the electron beam of the scanning electron
microscope;
D. low speed deflection means for deflecting the electron beam of
the scanning electron microscope to successive coordinate address
positions at the major surface of the member responsive to the
electrical signals from the address generator means;
E. a subscan generator means for generating electrical signals
corresponding to successive subscans for exposing a precision
subpattern at the major surface of the member about said coordinate
address positions; and
F. high speed deflection means for deflecting the electron beam of
the scanning electron microscope through subpatterns about said
successive coordinate address positions at the major surface of the
member responsive to the electrical signals from the subscan
generator means.
2. Apparatus for rapid exposure of a precision micropattern on a
major surface of a prepared member with a scanning electron
microscope as set forth in claim 1 comprising in addition:
G. compensation generator means for generating compensating
electrical signals corresponding to transient errors from inputting
electrical signals from the address generator means to the low
speed deflection means; and
H. cross-over means for inputting the compensating electrical
signals to the high speed deflection means.
3. Apparatus for rapid development of a micropattern with a
scanning electron microscope comprising:
A. a scanning electron microscope positioned to project a small
cross-sectional electron beam;
B. an address generator means for generating electrical signals
corresponding to successive coordinate addresses of successive
subscans with the electron beam of the scanning electron
microscope;
C. low speed deflection means for deflecting the electron beam of
the scanning electron microscope to successive coordinate address
positions responsive to the electrical signals from the address
generator means;
D. a subscan generator means for generating electrical signals
corresponding to successive subscans about said coordinate address
positions; and
E. high speed deflection means for deflecting the electron beam of
the scanning electron microscope through subpatterns about said
successive coordinate address positions responsive to the
electrical signals from the subscan generator means.
4. Apparatus for rapid development of a precision micropattern with
a scanning electron microscope as set forth in claim 3 comprising
in addition:
F. compensation generator means for generating compensating
electrical signals corresponding to transient errors from inputting
electrical signals from the address generator means to the low
speed deflection means; and
G. cross-over means for inputting the compensating electrical
signals to the high speed deflection means.
Description
FIELD OF THE INVENTION
The invention relates to the making of integrated circuits and
other micro-miniature electronic components with submicron
accuracy.
BACKGROUND OF THE INVENTION
The present invention is an improvement on the electron beam
fabrication system described in U.S. Pat. No. 3,679,497, granted
July 25, 1972.
The scanning electron microscope of such fabrication system
involves the use of a finely focused electron beam, e.g. 1 micron
in diameter, to generate a planar component having submicron
accuracy in an electron sensitive resist layer. The electron beam
is automatically moved through the micropattern by discrete
overlapping positions, point-by-point, on command from a digital
computer. The beam control information is typically stored on a
magnetic tape which is fed into the computer where it is used to
generate coordinate electrical address signals which are inputted
to deflection means and in turn deflect the electron beam to the
successive address positions. While such scanning electron
microscope system can be used to directly develop a high resolution
micropattern in an electron resist in making integrated circuits,
the electron beam fabrication system involves the use of the
scanning electron microscope to make a patterned photocathode
source (called an "electromask") for the electron image projection
system.
The main difficulty is that the scanning electron microscope takes
a very long time period to expose a complete micropattern. The
operating speed depends on a combination of a number of factors:
beam current and diameter, speed of beam deflection, electron
resist sensitivity, and data rate of the system. Under some
conditions, data rate is the primary limiting factor. To
illustrate, exposure of the pattern field measuring 2000 .times.
2000 microns with a 1 micron-diameter scanning beam typically
requires that the field be subdivided on 0.5 micron centers into a
raster of 4000 .times. 4000 addresses. Such as raster requires 12
bits of information in the X direction and 12 bits of information
in the Y direction or a total of 24 bits of information simply to
locate each address in the computer. The machine word, i.e. the
number of bits at each address location, is of course, much longer
by virtue of the operation information bits as well as the parity
code bits, word mark bits and machine instruction codes. Thus, in
the point-by-point exposure of 4000 .times. 4000 addresses, a
typical machine word may contain as many as 48 bits. The exposure
time is in turn fixed by the time required for the system to
generate or process the total bits, i.e. 48 .times. 4000 .times.
4000, together with intervening exposure times.
The point-by-point exposure with the scanning electron beam is also
limited in resolution by the geometry of the beam. The beam is
typically circular in cross-section and 1 micron in effective
diameter. In the exposure in 0.5 micron increments, a slightly
scalloped edge is formed along the edge or edges of the exposures.
The edge resolution of the system is therefore restricted by the
variation of the scallops. The variation can be reduced by placing
the address or exposure points closer together. However, this
further extends the exposure time and, depending on the storage
capacity of the computer, limits the scanning field of each
raster.
These difficulties and disadvantages have been substantially
reduced by the present invention. It greatly reduces the data rate
requirements of the system by a high speed deflection of the
electron beam through a subpattern at each address location,
thereby reducing the number of machine words required for an entire
field scan. And the invention reduces the size of the computer
storage needed to expose a micropattern of a given size and,
conversely, increases the scan field which can be exposed with a
given size computer storage. Further, it minimizes the variations
along the edges by causing the beam to sweep through a length at
each address, thereby increasing edge resolution of the system.
SUMMARY OF THE INVENTION
An apparatus and method are provided for producing, in a relatively
short period of time, a precisely located micropattern on a member
by exposure with an electron beam of a scanning electron
microscope.
The member is first prepared by applying over a major surface of
the member and electron resist layer. That is, a layer of material
that upon selective exposure to an electron beam becomes more or
less soluble and preferably more or less etchant resistant
(sometimes called an "electroresist"). The electron beam of small
cross-sectional dimensions of the scanning electron microscope is
located at an address position at the major surface of the member
by generating address signals by address generator means, which
typically includes a digital computer, and inputting the address
signals to low speed deflection means to cause the electron beam to
deflect to prescribed coordinates.
The located electron beam of the scanning electron microscope is
then moved through a subpattern about the address position on the
major surface of the member. The subscan movement is accomplished
by generating subscan signals by a subscan generator means, which
also typically includes a digital computer, and inputting the
subscan signals to high speed deflection means to cause the
electron beam to deflect through the prescribed subpattern.
The electron beam is thus repeatedly located at successive address
locations and moved through contiguous subscan patterns until a
prescribed micropattern is defined by differential solubility in
the electron resist layer. Subsequently, the resist layer is
developed in appropriate solvents, stabilized by thermal or
chemical treatments, and the micropattern transferred to the
electronic component by diffusion, etching or deposition.
Preferably, compensating generator means are additionally provided
to more rapidly locate the electron beam at each address position.
The compensation generator means generates a compensating
electrical signals corresponding to the transient electrical error
signal produced by inputting the address signals to the low speed
deflection means. Cross-over means are then provided for inputting
the compensating electrical signal to the high speed deflection
means. By this arrangement, the electron beam is addressed at each
address location more rapidly than simply inputting the address
signal to the low speed deflection means.
Other details, objects and advantages of the invention will become
apparent as the following description of the presently preferred
embodiments of the invention and the presently preferred methods of
using the invention proceeds.
BRIEF DESCRIPTION OF THE DRAWINGS
In the accompanying drawings, the present preferred embodiments of
the invention and present preferred methods of practicing the same
are illustrated in which:
FIG. 1 is a block diagram of the electrical circuit for exposing a
micropattern on a member with a scanning electron microscope in
accordance with the present invention;
FIG. 2 is a schematic showing the details of the present invention
in one ordinate of the deflection means of said blocks of FIG.
1;
FIGS. 3A through 3F shows the transient electrical signals at
various points in the circuit of FIG. 2;
FIG. 4 is a schematic showing exposure of a micropattern on a
member with a scanning electron microscope in accordance with the
prior art;
FIG. 5 is a schematic showing exposure of a micropattern on a
member with a scanning electron microscope in accordance with the
present invention; and
FIG. 6 is a graph illustrating the relative increase in exposure
rate with a scanning electron microscope utilizing the present
invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
Referring particularly to FIGS. 1 and 2, the member 10 is first
prepared by applying over a major surface 11 thereof an electron
resist layer 12. An electron beam 13 of an electron beam microscope
is projected through aperture 14 of final lens 15 of the microscope
onto resist layer 12 on the major surface of member 10 at 16.
Electron beam 13 is deflected to an address position 17 at the
major surface of member 10 by deflection means, fully described
hereinafter, on inputting address signals to said deflection means
from address generator means hereinafter described. Electron beam
13 is then moved through a subscan 18 at major surface 11 of member
10 by deflection means fully described hereinafter on inputting
subscan signals to said deflection means from subscan generator
means hereinafter described.
Referring to FIG. 1, a schematic is shown which illustrates the
deflection and subscan circuitry of the present invention. Both
address and subscan commands are preferably formed into a computer
program and used to program digital computer 20. The address and
subscan at each address location may be provided in one machine
word or consecutive machine words. In any case, electrical machine
word signals for the address location are inputted by computer 20
through data bus 21 to address position generator 22. Address
position generator 22 is actuated by the machine word electrical
signals to generate electrical signals corresponding to the
orthogonal coordinates (i.e. X and Y components) of the address
location 17 for electron beam 13 at major surface 11 of member 10.
Coordinate X and Y components of the address signal are then
separately inputted via leads 23 and 24, respectively, to
operational amplifiers 25 and 26, respectively, of the low speed
deflection means. The low speed deflection means also includes
X-low speed deflection coils 28 and Y-low speed deflection coils
31, which are orthogonally positioned in pairs symmetrically about
electron beam 13, to deflect electron beam 13 to the prescribed
address position 17. The X and Y components of the address signal
are inputted from amplifiers 25 and 26 through leads 27 and 30 to
deflection coils 28 and 31, respectively, and fed back through
leads 29 and 32, respectively, to amplifiers 25 and 26,
respectively.
Locating electron beam 13 at address position 17, the computer 20
inputs electrical machine word signals for subscan through data bus
33 to actuate subscan generator 34. Generator 34 is caused by the
machine word electrical signals to generate electrical signals in X
and Y components, i.e. which are orthogonally related,
corresponding to the movement of the electron beam through subscan
or subpattern 18 at the address position 17 on major surface 11 of
member 10. The X and Y components of the subscan electrical signals
are inputted through leads 35 and 36, respectively, to operational
amplifiers 37 and 38, respectively, of the high speed deflection
means. The high speed deflection means also includes X-high speed
deflection coils 40 and Y-high speed deflection coils 43, which are
orthogonally positioned in pairs symmetrically about the electron
beam and typically in the same coordinate system as low speed
deflection coils 28 and 31, to deflect the electron beam through
the prescribed subscan or subpattern 18. The X and Y components of
the subscan electrical signals are inputted from amplifiers 37 and
38 through leads 39 and 42, respectively, to deflection coils 40
and 43, respectively, and are fed back through leads 41 and 44,
respectively, to amplifiers 37 and 38, respectively.
Preferably, X and Y compensation generators 45 and 46 are
additionally provided to rapidly position the electron beam at the
address location 17. The difficulty is that the low speed
deflection means have substantial inductances which cause the
inputted signals to asymptotically rise to the prescribed generated
coordinate address signals. These transient signals cause a time
lag in the positioning of the electron beam at each address
location. Compensation generators 45 and 46 receive the respective
X and Y transient electrical signals via leads 47 and 48,
respectively, from the feed back to operational amplifiers 25 and
26, respectively, which signals are caused by the respective
inductances of low speed deflection means. The compensating
generators process said component transient signals to produce
conjugate or compensating X and Y component electrical signals
which are inputted through crossover leads 49 and 50 to operational
amplifiers 37 and 38, respectively, of the high speed deflection
means. By these compensating inputs to high speed deflection means,
high speed deflection coils 40 and 42 are caused to deflect
electron beam 13 of the scanning electron microscope to the address
location 17 on major surface 11 of member 10 much more rapidly and
in turn substantially reduce the time required to position the
electron beam at each address and, in turn, substantially reduce
the time required to expose the described micropattern in the
resist layer 12 on the major surface of member 10.
Referring to FIG. 2, details are shown of the operational
amplifiers, low and high speed deflection coils, and compensation
generators. The details are shown of the X components of each
device with their interconnections. It will be understood that a
duplicate arrangement is provided for the Y components, with the
Y-deflection coils 31 and 43 positioned in pairs perpendicular to
the X-deflection coils 28 and 31 symmetrically about the electron
beam 13.
The X component of the address signal is inputted through lead 23
to operational amplifier 25 of the low speed deflection means. The
signal has a voltage step-function wave form as shown in FIG. 3A,
where the voltage corresponds to the desired incremental deflection
of the electron beam in the X-component axis. In amplifier 25, the
voltage step-function wave form is converted to a current
step-function wave form by passage through resistor 51, and the
current step function is inputed through lead 52 to amplifier
device 53. Device 53 has a high current output of the opposite
polarity from the input and, as an operational amplifying device,
operates to bring the two input terminals to zero. The other input
lead 54 to amplifier device 53 is grounded. Thus, the feedback
circuit as hereinafter described is such as to bring to input at
lead 52 to ground or zero volts.
The output of amplifier device 53 is a high current step-wave
signal which is inputted via lead 27 to lower and upper X-low speed
deflection coil pairs 55 and 56 of low speed deflection means.
Deflection coil pairs 55 and 56 are symmetrically positioned about
electron beam 13 opposite each other. The electron beam is thus
caused to deflect by upper coil pair 56 through an angle .theta.
opposite to the direction of desired deflection and then caused to
deflect by pair coil 55 through an angle 2.theta. in the opposite
direction to provide the described deflection to the address
location 17 at major surface 11 of member 10. The difference in
deflections by the lower and upper coils 55 and 56 is caused by
providing the lower coils with twice the ampere turns of the upper
coils. The purpose of this double deflection is to maintain the
electron beam centered in the aperture 14 of final lens 15 of the
scanning electron microscope.
Because of the inductance of the low speed deflection coils, the
current signal through deflection coils 55 and 56 is not a
step-function wave form. Rather, the signal is a transient which
asymptotically approaches the current signal desired for the X
component of the address location as shown in FIG. 3B. This
transient is fed back from low speed deflection coils 55 and 56
through lead 29 to amplifier 25, where the signal is processed
through resistor 57 to ground. By this arrangement, the conjugate
voltage signal shown in FIG. 3C is formed at 58, which is fed back
through lead 59 and resistor 60 (i.e. a matching resistor for
resistor 51) to convert the wave form to a current transient
signal, and through lead 61 to be added to the inputted
step-current waveform in lead 52 to approach zero.
The conjugate voltage signal at 58 is also inputted to
X-compensation generator 45 through lead 47, where the signal
passes through resistor 62 to convert it to a current wave form.
Also inputted to generator 45 through lead 64 from address position
generator 22 is the original address signal as shown in FIG. 3A.
Said address signal passes through resistor 65 to convert the
signal to a current wave form and thereafter add it to the
converted conjugate current signal from the feedback of operational
amplifier 25 at 63. The sum current signal formed is the
compensating signal, as shown in FIG. 3D, which is outputted to
operational amplifier 37 of the high speed deflection means through
lead 49.
In the operational amplifier 37, the compensating signal is
inputted through lead 66 to the amplifier device 67. Device 67 has
a high current output of the opposite polarity from the input and,
as an operational amplifying device, operates to bring the two
input terminals to zero. The other input lead 68 to amplifier
device 67 is grounded. Thus, the feedback circuit as hereinafter
described is such as to bring the input at lead 66 to ground or
zero volts. The output of amplifier device 67 is a high current
pulse signal which is inputted via lead 39 to lower and upper
X-high speed deflection coil pairs 69 and 70 of the high speed
deflection means. Deflection coil pairs 69 and 70 are low
inductance coils positioned symmetrically about electron beam 13
opposite each other, with lower coil pair 69 having twice the
ampere turns of upper coil pair 70. The amplified compensation
pulse forms a magnetic field between the coils as shown by curve B
of FIG. 3E, which complements the magnetic field formed
therebetween by low speed deflection coil pairs 55 and 56 shown by
curve A of FIG. 3E, to form a net deflection magnetic field as
shown in FIG. 3E which causes virtually a step deflection of
electron beam 13 through an angle .theta. and then an angle 2
.theta. to the address location 17. It is anticipated that the
compensation signal will thus permit deflection times on the order
of 100 nanoseconds for typical deflection increments. This feature
in turn becomes of considerable importance in reducing the exposure
time of the entire micropattern when the accumulated time saved on
each deflection is summed.
After deflection to the address location 17, the X component of the
subscan signal is inputted through lead 36 to operational amplifier
37 of the high speed deflection means. The signal will be a voltage
modulated signal with the modulation corresponding to changes along
the X coordinate of the electron beam deflection as the beam moves
through the prescribed subscan 18 about the address position 17.
The voltage signal inputted is converted to a current modulated
signal by resistor 76 and then inputted via lead 66 to amplifier
device 67. The output of device 67 is again a modulated high
current which is inputted to lower and upper high speed deflection
coil pairs 69 and 70. The electron beam is again provided with a
double deflection, first through an angle .theta. and then an
opposite angle 2 .theta., by providing the lower coils 69 with
twice the ampere turns of upper coils 70. The high speed coils
have, however, substantially fewer ampere turns than low speed
deflection coils 55 and 56 to enable the high speed deflection
means to respond at much faster rates but deflecting the electron
beam through much smaller angles than the low speed deflection
means because of the smaller inductance and smaller magnetic field.
The typical deflection in each coordinate of the subscan 18 is 8
microns; but it is contemplated that a deflection of up to 32
microns may be provided by the high speed deflection means. The
restricting factor in this connection is that the greater the
deflection, the higher the inductance of the coils, and the slower
the response on the subscan. Thus, 32 microns is considered a
practical upper limit of subscan deflection in either coordinate
with presently available deflection means.
Because of the inductance of the high speed deflection coils, the
current signal through deflection coils 55 and 56 is not quite the
same as the input signal. Rather, the signal is a transient which
asymptotically approaches the current signal desired for the X
component of the subscan as shown in FIG. 3F. This transient is fed
back from high speed deflection coils 69 and 70 through lead 41 to
amplifier 37, where the signal is processed through resistor 71 to
ground. By this arrangement, the conjugate transient voltage signal
shown in FIG. 3F is formed at 72, which is fed back through lead 73
and resistor 74 (i.e. a matching resistor for resistor 76) to
convert the wave form to a current transient signal, and through
lead 75 to be added with the inputted step-current wave form in
lead 66 to approach zero.
It should be observed that the double deflection system as shown in
FIG. 2 is only one way of carrying out the present invention. The
double deflection system may alternatively form electric fields by
the high speed deflection means instead of the magnetic fields as
shown, or both low and high speed deflection means may be provided
with the same coils by using component signals of different
frequencies for the address and subscan deflections. Further, the
deflection means may operate beyond the final lens 14 with a single
set of coils to provide a single deflection directly to the address
location and through the subscan. Preferably, however, the double
deflection system as shown in FIG. 2 is used to reduce beam shape
distortions in final lens 15 caused by off-axis beam transversal,
while at the same time eliminating the necessity for interposing
space-consuming deflection coils or electrodes between the final
lens 14 and the member 10.
Referring to FIGS. 4 and 5, the results of the present invention
are shown with reference to the prior art. Referring to FIG. 4, the
prior art method is shown of selectively exposing a micropattern
with a scanning electron microscope address-by-address. FIG. 5
shows the corresponding exposures with the use of the subscan
method herein described.
To illustrate, consider electron beam 113 having center 116 and an
effective exposure diameter of 1 micron. The electron beam is
deflected to successive address locations 117, 1/2 micron aprat, to
provide a relative smooth exposed edge. However, as can be seen
from FIG. 4, the geometry still causes scallop variations to occur
along the edge formed by exposure of beam 113 at successive address
locations 117. Moreover, to address and expose, for example, a 1
cm.sup.2 member a total of 4 .times. 10.sup.8 addresses must be
provided, and to expose a 2 .times. 4.5 micron area as shown in
FIG. 4, 24 addresses are needed. And with a typical address work
containing 48 bits for exposure of a 2000 .times. 2000 micron
field, it is observed that the scanning microscope is limited by
the storage capacity of the signal generator system, as well as the
data rate which extends the exposure time.
Referring to FIG. 5, the contrasting use of the present invention
to expose a micropattern with a scanning electron microscope is
clearly shown. Electron beam 13 has center 16 which is deflected to
address locations 17 and is then deflected at high speeds through
subscans 18 for a linear exposure or a rectangular exposure.
Instead of 24 address locations to expose the 2 .times.4.5 micron
area, only one address location and a subscan is needed, which
subscan can be provided by either the same machine word as for the
address location or by a successive machine word. The rate of
exposure of a micropattern is in turn substantially increased. It
can be seen from FIG. 5 that subscans can be made contiguous simply
by spacing the address locations. Further, the variations at the
edge of the exposure is essentially eliminated, thus increasing the
edge resolution of the exposure system.
Referring to FIG. 6, a quantitative comparison is shown between the
exposure time of the present invention and the exposure time of the
prior art address-by-address system. A 48-bit machine word is
assumed for the prior art system and a 64-bit machine word is
assumed for the present invention.
The ordinate of FIG. 6 has been labeled as the time to expose 25
percent of a 2 inch square resist layer (6 cm.sup.2) expressed in
minutes. It will be seen that to accomplish the exposure a data
rate exceeding 2 .times. 10.sup.7 bits per second is required. This
rate will just match the exposure speed permitted by an assumed
beam current of 10.sup.-.sup.8 amps and an electron resist
sensitivity of 10.sup.-.sup.5 coulombs per square cm. By the use of
a subscan system of controlled size at each principal beam address,
an area equivalent to many point-by-point addresses may be exposed
with only one address, as shown in FIG. 5. In this way the number
of addresses required for a small geometric unit can be reduced to
1 from a number equal to 4 times the area of the unit in square
microns. By using a subscan, which can be adjusted in dimension
independently in X-Y directions from 1 to 16 microns, FIG. 6 shows
(comparing curves A and B) that address economies ranging up to
1000-fold can be obtained. Points C and E, and points D and F show
a direct comparison of the reduced exposure time with a typical
disc memory (DDC-7302) and typical mini-digital computer (PDP-8),
respectively.
As can be seen from inspection of FIG. 6, typical exposure times
for a 2 inch square resist layer may approach 10 minutes or less
assuming a 10.sup.-.sup.7 amp beam current, 10.sup.-.sup.5 coulombs
per centimeter resist sensitivity, a data rate of 4 .times.
10.sup.6 bits per second and a high speed dual-deflection system as
described hereinbefore. The use of such as system to prepare device
patterns for complex integrated circuits and large scale
integration will reduce the costs of designing and fabricating such
circuits even in small custom lot quantities to an almost
insignificant level as compared with similar costs using
address-by-address electron scanning technology. The principal
component of such costs at present is computer time. However, the
net effect of present invention is to reduce by orders of magnitude
the costs of operating such computers in micropattern
exposures.
While presently preferred embodiments have been shown and described
with particularity, it is distinctly understood that the invention
may be otherwise variously embodied and performed within the scope
of the following claims.
* * * * *