U.S. patent number 3,901,423 [Application Number 05/418,895] was granted by the patent office on 1975-08-26 for method for fracturing crystalline materials.
This patent grant is currently assigned to Purdue Research Foundation. Invention is credited to Benny M. Hillberry, Robert J. Myers.
United States Patent |
3,901,423 |
Hillberry , et al. |
August 26, 1975 |
Method for fracturing crystalline materials
Abstract
This disclosure relates to a method for fracturing crystalline
materials whereby thin wafers may be produced with minimum waste of
the crystal.
Inventors: |
Hillberry; Benny M. (West
Lafayette, IN), Myers; Robert J. (Kokomo, IN) |
Assignee: |
Purdue Research Foundation
(Lafayette, IN)
|
Family
ID: |
23659997 |
Appl.
No.: |
05/418,895 |
Filed: |
November 26, 1973 |
Current U.S.
Class: |
225/2; 125/1;
125/23.01 |
Current CPC
Class: |
B28D
5/0011 (20130101); B28D 5/0023 (20130101); Y10T
225/12 (20150401) |
Current International
Class: |
B28D
5/00 (20060101); B26F 003/02 () |
Field of
Search: |
;125/1,23R,23T
;225/2,93.5,96.5,101 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Whitehead; Harold D.
Claims
What is claimed is:
1. A method for producing thin wafers from crystalline material
characterized by:
the step of introducing a preselected stress concentration into a
crystal along a line to establish a predetermined fracture plane
that will produce a thin wafer whereby the location of the fracture
initiation is predetermined;
the step of applying a continuing tensile stress acting normally
upon the predetermined fracture plane; and
the step of initiating fracturing of the crystal while maintaining
the application of tensile stress by application of a sudden acting
fracturing force acting substantially perpendicular to the
predetermined fracture plane whereby said applied fracturing force
and tensile stress enables said thin wafers to be produced at said
location predetermined by said introduced stress concentration.
2. The method according to claim 1 in which the stress
concentration is accomplished by a mechanical expedient causing
physical deformation of the crystal to produce a predetermined
force concentration.
3. The method according to claim 1 in which the step of introducing
the tensile stress internally in the material is accomplished by
application of a loading mode to the crystal exterior surface.
4. The method according to claim 3 in which said loading mode is
applied by application of at least one external force acting upon
said crystal.
5. The method according to claim 1 in which the step of fracturing
the crystal is accomplished by a force applied to the material by a
mechanical expedient.
6. The method according to claim 5 in which said force applied by
said mechanical expedient is by means of a wedge applied in the
direction of the predetermined fracture plane.
7. A method for producing thin wafers from a crystalline rod
characterized by the steps of:
providing a flat side on the rod, which flat is disposed normally
to a line extending from the mid-point of said flat to the center
of said rod;
notching said flat surface along a line where it is desired to
initiate fracture of the rod;
applying tensile stress to the rod stock in an axial direction;
and
applying a fracturing force into said notch acting substantially
perpendicular to the longitudinal rod axis whereby the rod is
fractured substantially transversely with respect to the
longitudinal axis of the rod.
8. The method of claim 7 in which the fracture is initiated by
driving a wedge into the notch and a support force is applied to
prevent movement of the rod in a transverse direction.
Description
FIELD OF THE INVENTION
This invention relates to a method for fracturing solid materials,
and more particularly to a method for fracturing a single crystal
whereby thin wafers or slices having a desired thickness and
fracture surface configuration are produced.
BACKGROUND OF THE INVENTION
In the manufacture of transistors and other solid state devices
crystals or rods of semiconductor material are generally cut into
thin slices or wafers by a saw blade for further processing. These
slices are typically in the order of 0.010 to 0.015 inch thick
which is about the same thickness as the cutting blade. In many
cases the thickness of the slice is nearly the same as the cutoff
wheel kerf loss which results in an immediate loss of up to 50
percent of the semiconductor material. Also the slicing operation
is in itself time consuming and results in considerable scrap due
to breakage of the slices.
SUMMARY OF THE INVENTION
The present invention is a method of fracturing a crystal (such as
silicon or germanium) in a transverse manner in order to produce
thin wafers.
The basic method for creating the desired fracture is by imparting
a desired stress distribution to the solid which predetermines the
direction of crack growth and then by initiating the fracture at
the desired location.
The major advantages of this process are the realization of
material savings in creating slices of semiconductor crystals and
reducing manufacturing costs of making semiconductor devices.
DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic view of a silicon crystal prepared for
fracture.
FIG. 2 is a perspective view of the silicon crystal.
DETAILED DESCRIPTION OF THE INVENTION
One method that has been employed to create flat fracture surfaces
of silicon rods is by application of a tensile load, shown as L in
FIG. 1, to the material 1 and then the fracture is initiated at the
predetermined fracture plane 2 by forcing a wedge 3 into a
previously formed notch 4 on one or both sides of the material 1.
Several items critical to the method include the method of applying
the tensile load, shown as L in FIG. 1, the size and shape of the
notch 4 and the wedge 3, the magnitude of the tensile load L and
the force F on the wedge and, if only one wedge is used, the type
of support 5 opposite the wedge. The method illustrated in FIG. 1
has been employed to create thin slices 6 from a semiconductor
grade single crystal 1 of silicon. A flat 7 is cut on one side of
the crystal and a notch 4 is cut across this flat perpendicular to
the axis 8 of the rod as illustrated in FIG. 2. The blocks 9 for
imparting the tensile load are adhered to the crystal 1 with
mounting wax 10. The tensile load L is applied and then the wedge 3
is forced into the notch 4 to initiate the fracture. Various types
of supports have been used including a wedge with an additional
notch in the material (not shown). A spherical support 5 has given
the best experimental results but other support configurations will
also give satisfactory results.
Several methods for adhering the blocks to the crystal can be used.
Similarly, several methods for making the notch can be used. One or
more notches can be used with or without more than one wedge.
Scribe lines on the surface of the crystal and in the notch can be
used to aid in initiating and guiding the fracture. The geometry of
the notch as well as the wedge can be varied. A flat on none, one,
or more sides can be used. Impact loading to the wedge may also be
used. In addition, it is possible to initiate the fracture without
a precut notch by using a sharp wedge.
There are a large number of variations that may be applied to this
method, for example the preloading force L described above may also
be compressive, a bending moment, a torsional moment, shear or any
combination of these loadings which may be applied to the crystal
before and/or during fracture so long as the forces applied to the
crystal surface produce an internal force in the crystal that acts
substantially perpendicular to the desired fracture plane. Any
loading configuration may be used to create a controlled stress
pattern of the desired form in the crystal.
The wedge used in initiating the fracture may be substituted for in
several fashions. In the static or quasi-static case, expanding
materials can be placed in the notch and made to expand
sufficiently in the notch to initiate fracture. Other mechanical
and thermal methods may also be used. In dynamic cases, exploding
wires, exploding materials, stress waves or impact loads can be
introduced into the notch or crystal to initiate the fracture. This
novel method is divided into three essential parts, the step of
introducing a preselected stress concentration into the material,
the step of applying an internal tensile stress acting normally
upon the desired fracture plane, and the step of fracturing the
crystal by application of predetermined forces acting substantially
perpendicular to the predetermined fracture plane. Examples of
specific modes of accomplishing the various steps of the method are
as follows:
A. the step of introducing a preselected stress concentration into
the crystal may be accomplished by:
1. A notch.
2. A scribe line.
3. Any physical deformation of the crystal that produces the
desired stress concentration therein.
B. the step of applying an internal tensile stress acting normally
upon the desired fracture plane may be accomplished by:
1. Tensile force.
2. Compressive force.
3. Shear force.
4. Bending moment.
5. Torsional moment.
6. Any combination of the foregoing forces that produces internal
tensile force normal to the fracture plane.
C. the step of fracturing the crystal may be accomplished by:
1. A wedge, or wedges.
2. Expanding material in a notch.
3. Thermal expansions and shock.
4. An exploding wire.
5. A stress wave.
6. An impact load.
7. Other similar mechanical means or combinations of the above.
Other combinations of mechanical expedients can be employed to
obtain the desired slices or wafers as will be readily appreciated
by those skilled in the art once the force and stress relationships
necessary to accomplish the method are realized.
* * * * *