U.S. patent number 3,855,110 [Application Number 05/416,318] was granted by the patent office on 1974-12-17 for cylindrical rf sputtering apparatus.
This patent grant is currently assigned to United Aircraft Corporation. Invention is credited to Edouard L. Paradis, Daniel J. Quinn.
United States Patent |
3,855,110 |
Quinn , et al. |
December 17, 1974 |
CYLINDRICAL RF SPUTTERING APPARATUS
Abstract
A cylindrical cathode is used as a vacuum chamber to permit
sputtering by means of an rf potential on all sides of a workpiece
located coaxially within the chamber. Both insulators and
conductors may be used as target materials and as workpieces. Even
deposition of the sputtered material on long or continuously fed
workpieces is achieved by properly terminating the ends of the
coaxial sputtering chamber with grounded chambers of larger
diameter than the sputtering chamber and of sufficient length to
thereby gradually reduce the plasma density along the axial
direction to a relatively small value before reaching the end
walls.
Inventors: |
Quinn; Daniel J. (Manchester,
CT), Paradis; Edouard L. (Willimantic, CT) |
Assignee: |
United Aircraft Corporation
(East Hartford, CT)
|
Family
ID: |
23649486 |
Appl.
No.: |
05/416,318 |
Filed: |
November 15, 1973 |
Current U.S.
Class: |
204/298.02;
204/298.09; 204/298.24; 204/192.12; 204/298.16; 204/298.25 |
Current CPC
Class: |
H01J
37/3277 (20130101); H01J 37/342 (20130101); H01J
37/34 (20130101); C23C 14/35 (20130101) |
Current International
Class: |
C23C
14/35 (20060101); H01J 37/32 (20060101); H01J
37/34 (20060101); C23c 015/00 () |
Field of
Search: |
;204/192,298
;250/531 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Vertiz; Oscar R.
Assistant Examiner: Langel; Wayne A.
Attorney, Agent or Firm: Bradley; Donald F.
Claims
We claim:
1. Plasma utilization apparatus comprising
a cylindrical electrode adapted to support a target material on the
inner circumference thereof, said electrode defining a workpiece
chamber adapted to contain a workpiece,
means including a source of rf potential applied to said electrode
for forming a plasma within said workpiece chamber, said plasma
interacting with said target material and said workpiece,
and a grounded cylindrical termination chamber connected to at
least one end of said workpiece chamber and being electrically
insulated from said workpiece chamber, said termination chamber
having a cross-sectional area greater than the cross-sectional area
of said workpiece chamber, said termination chamber having an
aperture therein aligned with said workpiece chamber to permit
expansion of said plasma into said termination chamber.
2. Apparatus as in claim 1 and including a second said termination
chamber connected to the other end of said workpiece chamber and
electrically insulated therefrom.
3. Apparatus as in claim 1 and including a cylindrical magnet
surrounding said electrode.
4. Apparatus as in claim 1 and including means for cooling the
walls of said electrode.
5. Apparatus as in claim 1 in which said termination chamber is
formed from a metallic material and is attached to said workpiece
chamber by an annular insulating member.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to high rate sputtering apparatus for
depositing films of material on a substrate. More specifically this
invention relates to an improved sputtering apparatus which permits
insulators as well as conductors and semiconductors to be deposited
on the entire surface of any workpiece without the need for
rotating the workpiece. In another aspect this invention relates to
an improved method and apparatus for sculpturing the plasma density
in a chamber.
2. Description of the Prior Art
Prior to the present invention, the coating of workpieces by
sputtering was generally limited to coating only one side at a
time, or to coating all sides by sputtering outwardly from either a
planar or cylindrical target onto a rotating workpiece.
Electrically conducting materials but not insulating materials can
presently be applied to a workpiece using dc energization only by
sputtering inwardly toward the workpiece from a cylindrical
target.
Coating a workpiece by rotating the workpiece in front of a
sputtering target is limited in its applicability since the
workpiece must be sufficiently strong to withstand the mechanical
forces produced by the rotation, and thus only relatively small,
sturdy workpieces can be utilized. Another disadvantage of this
technique is that the workpiece is thermally cycled as it rotates,
thereby causing additional stress and mechanical problems.
Complicated mechanical apparatus is also necessary to introduce the
rotary motion into the sputtering chamber, and this requirement
raises additional difficulties when connections to the workpiece or
sputtering chamber are desired. For example, it may be necessary to
introduce water cooling to the workpiece, or to monitor the
temperature with a thermocouple, or provide bias sputtering of the
workpiece to promote good coating adherence.
SUMMARY OF THE INVENTION
The present invention avoids the limitations of the prior art by
allowing the use of rf energization to sputter inwardly from a
cylindrical target. This eliminates the need for rotating the
workpiece and permits a workpiece to be coated on all sides by
conducting or insulating materials. By means of the present
invention, it is also possible to coat workpieces of considerable
length or continuously fed workpieces.
In accordance with the present invention, a cylindrical target
electrode is used as a portion of the vacuum chamber and an rf
field applied to the low pressure gas in the chamber to form a
plasma therein. The workpiece which may be a long, narrow rod or
fiber is located on or near the axis of the cylinder. To permit the
even deposition of the target material axially along the workpiece,
the ends of the cylindrical vacuum chamber are modified by
providing grounded chambers with dimensions sufficiently large to
allow the plasma density to decay gradually. The end chambers are
electrically insulated from the target electrode chamber, and the
target electrode is surrounded by a cylindrical electromagnet to
enhance uniform plasma formation.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a vertical section showing the preferred structure of the
sputtering apparatus.
FIG. 2 shows in partial graph form the axial variation in thickness
of deposited material on a workpiece using the structure of FIG.
1.
DESCRIPTION OF THE PREFERRED EMBODIMENT
Referring to FIG. 1, there is shown a substrate or workpiece 10 in
the form of a long rod. The workpiece may be composed of either an
insulating or conducting material and may be of any shape
compatible with the sputtering apparatus to be described.
Surrounding the workpiece 10 is the cylindrical target 12 composed
of the material with which it is desired to coat the workpiece, and
which for purposes of this invention may be a conductor,
semiconductor or insulator. The target 12 is affixed to a
cylindrical cathode member 14 of conductive or metallic material,
the cathode member 14 also serving as a support and a heat sink for
the target 12. The target 12 may be attached to the cathode member
14 by any known means such as soldering to assure efficient heat
and electrical power transfer. As shown in the figure the cathode
member 14 contains passages 16 through which water is circulated to
cool the walls of the cathode member 14. The water is pumped into
and extracted from the passages 16 via conduit 18.
The target and cathode assembly are surrounded by a shield 20 of
copper or other suitable material for purposes of radiation
protection. An electromagnet 22 in the shape of a cylinder
surrounds the shield 20 outside of the cathode and provides an
axial magnetic field which promotes uniform plasma formation along
the axis of the cathode, stabilizes the plasma, and provides a
degree of temperature control of the object to be coated. The axial
magnetic field, however, is not essential to operation of the
sputtering apparatus, but merely enhances its operation.
Apparatus of the type described above has been used to apply a
coating of a conductive material to a workpiece by forming the
target of the conductive material which it is desired to sputter
onto the workpiece and applying a dc voltage to the target
electrode. When a radio frequency (rf) potential was applied,
however, to the target electrode, uneven coating of the workpiece
resulted, and large voltages were induced on the workpiece which
resulted in sputtering of the workpiece material onto the
cylindrical target. It was theorized that the erratic operation was
caused by the reflection of the rf waves from the high plasma
density gradient which appeared at the ends of the chamber. It was
further speculated that by gradually reducing the gradient of the
plasma density, the reflections would not occur and improved
operation would result. By terminating the ends of the cathode
chamber with grounded cylindrical chambers of larger diameter than
the cathode chamber and having dimensions large enough to allow the
plasma density to decay to a relatively small value before reaching
the walls of the end chamber, it has been found that radically
improved operation of the sputtering apparatus occurs, and that
with the use of rf potentials both insulating and conducting
materials may be coated on the workpiece.
Referring again to FIG. 1, a preferred embodiment of the improved
apparatus is shown. To each end of the cathode member 14 there is
attached a cylindrical insulating standoff shown at 24 and 26. Onto
each insulating standoff is attached a cylindrical termination
chamber shown at 28 and 30 formed from a metallic material such as
stainless steel. A gas inlet 32 as well as a gas pressure gauge
port 36 are provided in end cap 34 of termination chamber 30, while
a gas pumpout port 38 is provided in end cap 40 of termination
chamber 28. The termination chambers are attached to the insulating
standoffs 26 and 24 by plates 42 and 44 preferably of insulating
material, each plate containing an opening in the center thereof as
shown at 46 and 48. O-ring seals are used between the termination
chambers 28 and 30 and the respective insulating plates 44 and 42,
and also between the cathode 14 and insulating standoffs 24 and 26.
Heat sinks 50 and 52 are shown positioned in contact with
insulating standoffs 24 and 26, the heat sinks being cooled by
cooling coils 54 and 56. An insulated workpiece holder is shown at
58, and a connection for the rf input is shown at 60.
Typical operation involves loading a clean workpiece 10 into the
cylindrical sputtering chamber as shown in FIG. 1. The chamber is
then evacuated to about 10.sup..sup.-6 torr. A gas, generally but
not necessarily inert, is next admitted to the sputtering chamber
to a pressure of about 10.sup..sup.-2 torr. A dc axial magnetic
field of about 150 gauss is imposed in the cylindrical cathode
cavity. With cooling water flowing, the desired rf power density is
applied to the cathode. If sputter cleaning or bias sputtering of
the workpiece is desired, the workpiece is electrically connected
to a lead of the insulated feed through 58, and a bias potential of
either rf or dc is applied. An rf bias would be required if the
workpiece were being coated with an insulator. A special feature of
this cylindrical cathode is that a self-induced rf bias will appear
on the workpiece if the insulated feed through lead is externally
connected to ground. The magnitude of the self-induced bias can be
decreased by adding electrical resistance between the lead and
ground.
An example of a preferred embodiment of the apparatus has a target
15 inches long and 2.5 inches in inside diameter, with termination
chambers 6 inches in diameter and 10 inches long. With applied rf
power densities of 8.6 w/in..sup.2 to 25 w/in..sup.2, coatings were
applied successfully to fibers of a 0.004 inch diameter as well as
rods of 0.5 inch diameter. Sputtering targets were of insulating as
well as conducting materials, and coatings were applied to
insulating as well as conducting workpieces. For example, a coating
of Al.sub.2 O.sub.3 has been applied to a workpiece of tungsten at
a rate of 85A/min., and a coating of Ni has been applied to a
workpiece of alumina at a rate of 750A/min., both coatings being
applied with a power input of 8.6 w/in..sup.2 with an rf frequency
of 13.56 MHz.
To illustrate the effect of the use of the terminating chambers on
a workpiece, FIG. 2 shows in graph form a typical coating thickness
profile for workpieces placed along the axis of the cylindrical
target. The coating thickness is substantially uniform along the
length of the workpiece.
It is apparent that the apparatus described may be made larger or
smaller by varying the diameter and/or the length of the cathode
chamber. The cathode chamber length, however, must be short
compared to a quarter wavelength of applied rf potential, or
several sections may be connected in line to achieve the desired
length. Each section, by itself, must be less than a quarter
wavelength and electrically insulated from the other cathode
chambers. This insulation could be achieved by the use of
insulating standoffs and grounded end chambers. By connecting the
chambers in line, a continuous feeding of a long workpiece through
the chambers is possible.
Other variations of the chamber construction may be used to
gradually reduce the plasma density at the desired rate at the end
walls. For example, external electric or magnetic fields may be
used separately or in combination to sculpture the plasma to any
desired density gradient along the axial length of the chamber. In
some applications it may be desired to coat a workpiece in an
irregular manner, or to use a termination chamber at one end of the
chamber only. In other applications it may be desired to utilize
the reflections of the rf energy from the plasma density gradient
for irregularly shaped workpieces.
Other modifications of the structure and operation of this
invention will be apparent to those skilled in the art.
* * * * *