U.S. patent number 3,831,040 [Application Number 05/305,317] was granted by the patent office on 1974-08-20 for temperature-dependent current supplier.
This patent grant is currently assigned to Minolta Camera Kabushiki Kaisha. Invention is credited to Yasuhiro Nanba, Masayoshi Sahara.
United States Patent |
3,831,040 |
Nanba , et al. |
August 20, 1974 |
TEMPERATURE-DEPENDENT CURRENT SUPPLIER
Abstract
A temperature-dependent current supplier specially suitable for
application to an integrated circuit is characterized as follows.
The base of a first transistor is connected to a connecting point
between two resistors which are connected in series to each other
in a collector circuit of said transistor, the voltage between the
base and the collector of said transistor being selected at about
kT/q where the charge quantity is q, the Boltzmann's constant is k
and the absolute temperature is T; and the base of a second
transistor is connected to the collector of said first transistor,
respective temperature coefficients of the base-emitter voltages of
said first and second transistors being selected to differ from
each other; and also current-outputs of the quantity proportional
to the absolute temperature is taken out from the collector circuit
of said second transistor.
Inventors: |
Nanba; Yasuhiro (Sakai,
JA), Sahara; Masayoshi (Sakai, JA) |
Assignee: |
Minolta Camera Kabushiki Kaisha
(Osaka City, JA)
|
Family
ID: |
13991917 |
Appl.
No.: |
05/305,317 |
Filed: |
November 10, 1972 |
Foreign Application Priority Data
|
|
|
|
|
Nov 11, 1971 [JA] |
|
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46-90203 |
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Current U.S.
Class: |
327/512; 257/467;
327/540; 323/315 |
Current CPC
Class: |
G05F
3/30 (20130101) |
Current International
Class: |
G05F
3/08 (20060101); G05F 3/30 (20060101); H03k
017/00 () |
Field of
Search: |
;330/22,23
;307/296,297,310 ;317/235Q |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Miller, Jr.; Stanley D.
Assistant Examiner: Davis; B. P.
Attorney, Agent or Firm: Craig & Antonelli
Claims
What is claimed is:
1. A temperature dependent current supply circuit comprising first
and second transistors, a source of supply voltage, first and
second resistors connected in series to said first transistor
across said source of supply voltage, the base of said second
transistor being connected to the collector of said first
transistor, the base of said first transistor being connected to a
point between said first and second resistors, a third resistor
connected in series with the emitter of said second transistor to
one side of said source of supply voltage and a load connected in
series with the collector of said second transistor to the other
side of said source, said first and second resistors having values
such that the base-collector voltage of said first transistor is
approximately kT/q, where the charge quantity is q, the Boltzmann's
constant is k and the absolute temperature is T.
2. A temperature dependent current supply circuit as defined in
claim 1, wherein the areas of the emitter layers of said first and
second transistors are different so as to cause a desired
difference between the temperature coefficient of the base-emitter
junction of said first transistor and the temperature coefficient
of the base-emitter junction of said second transistor.
3. A temperature dependent current supply circuit as defined in
claim 1, wherein said third resistor has a resistance value
sufficient to restrict the current flow through the second
transistor so as to cause a desired difference between the
temperature coefficient of the base-emitter junction of said first
transistor and that of said second transistor.
4. A temperature dependent current supply circuit comprising first
and second transistors, a source of supply voltage, first and
second resistors connected in series to said first transistor
across said source of supply voltage, the base of said second
transistor being connected to the collector of said first
transistor, the base of said first transistor being connected to a
point between said first and second resistors, said first and
second resistors having values such that the base-collector voltage
of said first transistor is approximately kT/q, where the charge
quantity is q, the Boltzmann's constant is k and the absolute
temperature is T, a third transistor and third and fourth resistors
connected in series with said second transistor across said source
of supply voltage, said third resistor being connected between the
emitter of said second transistor and one side of said source of
supply voltage, a fourth transistor connected in series with a load
and a fifth resistor across said source of supply voltage, the
bases of said third and fourth transistors being connected
together, and a fifth transistor having its base connected to the
collector of said second transistor, its emitter being connected to
the bases of said third and fourth transistors and its collector
being connected to the emitter of said fourth transistor.
5. A temperature dependent current supply circuit as defined in
claim 4, wherein said third and fourth transistors are each formed
as composite transistors comprising interconnected NPN and PNP
transistors.
6. A temperature dependent current supply circuit as defined in
claim 4, wherein said third resistor has a resistance value
sufficient to restrict the current flow through the second
transistor so as to cause a desired difference between the
temperature coefficient of the base-emitter junction of said first
transistor and that of said second transistor.
7. A temperature dependent current supply circuit as defined in
claim 4, wherein the areas of the emitter layers of said first and
second transistors are different so as to cause a desired
difference between the temperature coefficient of the base-emitter
junction of said first transistor and the temperature coefficient
of the base-emitter junction of said second transistor.
8. A temperature dependent current supply circuit comprising first
and second transistors, a source of supply voltage, first and
second resistors connected in series to said first transistor
across said source of supply voltage, the base of said second
transistor being connected to the collector of said first
transistor, the base of said first transistor being connected to a
point between said first and second resistors, said first and
second resistors having values such that the base-collector voltage
of said first transistor is approximately kT/q, where the charge
quantity is q, the Boltzmann's constant is k and the absolute
temperature is T, a third resistor and third and fourth resistors
connected in series with said second transistor across said source
of supply voltage, said third resistor being connected between the
emitter of said second transistor and one side of said source of
supply voltage, a fourth transistor connected in series with a load
and a fifth resistor across said source of supply voltage, the
bases of said third and fourth transistors being connected
together, fifth and sixth transistors connected together through a
sixth resistor in series across said source of supply voltage, a
pair of diodes connecting the bases of said third and fourth
transistors to a point between said fifth and sixth transistors,
the base of said fifth transistor being connected to the base of
said second transistor and the base of said sixth transistor being
connected to said third transistor.
9. A temperature dependent current supply circuit as defined in
claim 8, wherein said third and fourth transistors are each formed
as composite transistors comprising interconnected NPN and PNP
transistors.
10. A temperature dependent current supply circuit as defined in
claim 8, wherein said third resistor has a resistance value
sufficient to restrict the current flow through the second
transistor so as to cause a desired difference between the
temperature coefficient of the base-emitter junction of said first
transistor and that of said second transistor.
11. A temperature dependent current supply circuit as defined in
claim 8, wherein the areas of the emitter layers of said first and
second transistors are different so as to cause a desired
difference between the temperature coefficient of the base-emitter
junction of said first transistor and the temperature coefficient
of the base-emitter junction of said second transistor.
Description
BACKGROUND OF THE INVENTION
This invention relates to a temperature-dependent current supply
circuit capable of stably supplying a current output having a
magnitude proportional to the absolute temperature, irrespective of
fluctuations in the source voltage.
In electric circuits employing transistors, unlike those employing
vacuum tubes, it is always necessary to provide a circuit for
compensating for the fluctuations of the transistor characteristic
due to temperature changes. It is generally known that if the
characteristic of such a compensating circuit is such as to
maintain a current which is constant in spite of fluctuations of
the source voltage, but variable in proportion to the absolute
temperature, the circuit construction will be simplified and
effective for providing the desired circuit temperature
compensation. Such temperature compensation has been attained in
practice by utilizing thermistor elements or other thermally
variable resistance elements of copper wire, etc. However, in the
case where monolithic integrated circuits are employed for the
circuit, the above-mentioned elements are not usable, and hence,
the special characteristic of a thermally variable nature of a
transistor or diode must be utilized. For such purpose, a constant
current circuit as shown in FIG. 1 is widely used. In such a
conventional constant current circuit, however, if there happens to
be a fluctuation in the source voltage E, there will occur a
change, though small, in the voltage between the terminals of the
diode D as well as in the base potential of the transistor Q, and
it will cause a change in the current output I0 flowing in the load
L, thus failing to attain fully the desired object of obtaining the
constant current condition. Moreover, although such a circuit
configuration has a temperature-dependent characteristic, it is
impossible to stably obtain therefrom a current output proportional
to the absolute temperature.
SUMMARY OF THE INVENTION
This invention has as a main objective to overcome the foregoing
drawbacks.
A temperature-dependent current supply circuit is constituted in
such a manner that the base of a first NPN transistor (Q1) is
connected to a connecting point (P) between two resistors (R1 and
R2) which are connected in series to the collector of said
transistor (Q1), the voltage between the base and the collector of
said transistor (Q1) being selected at about kT/q, where the charge
quantity is q, the Boltzmann's constant is k and the absolute
temperature is T. The base of a second NPN transistor (Q2) is
connected to the collector of said first transistor (Q1),
respective temperature coefficients of the base-emitter voltage of
said first and second transistors (Q1 and Q2) being selected to
differ from each other, and also the current outputs of the
quantity proportional to the absolute temperature is taken out from
the collector circuit of said second transistor (Q2).
BRIEF EXPLANATION OF THE DRAWING
FIG. 1 is a schematic circuit diagram of a conventional current
supply circuit;
FIG. 2 is a schematic circuit diagram of an example of the present
invention;
FIG. 3 is a graph of general characteristics of the transistor;
FIG. 4 is a graph of characteristic curves for explanation of an
apparatus by this invention; and
FIGS. 5 and 6 are schematic circuit diagrams of other examples of
this invention.
DETAILED DESCRIPTION OF THE INVENTION
The circuit of the temperature-dependent current supply circuit
embodying the present invention, as shown in FIG. 2, comprises a
pair of similar type, for instance, NPN transistors Q1 and Q2. In
this case, when the source voltage E decreases (or increases), a
current I1 flowing through resistors R1 and R2 and the first
transistor Q1 decreases (or increases). By the decrease (or
increase) of this current I1, the base-emitter voltage VBE(Q1) of
the transistor Q1 decreases (or increases). Also by the decrease
(or increase) of said current, the voltage across the resistor R2
decreases (or increases). Therefore, by selecting the value of the
resistor R2 to cause the decreased (or increased) portion of said
voltage VBE(Q1) and the decreased (or increased) portion of said
voltage across the resistor R2 to compensate each other, the base
potential of the transistor Q2 can be maintained constant.
Consequently, a current I2 flowing through the load L can be
maintained constant, irrespective of fluctuations in the source
voltage.
Assuming the amplification factors of both transistors Q1 and Q2 to
be adequately high, and defining the saturation currents of the
transistors Q1 and Q2 as Is1 and Is2, respectively, the charge
quantity as q, the Boltzmann's constant as k and the absolute
temperature as T, then from the relations between the base-emitter
voltage VBE(Q1) of the transistor Q1 and the base-emitter voltage
VBE(Q2) of the transistor Q2:
Vbe(q1) = k.sup.. T/q .sup.. ln(I1/Is1) = R2.sup.. I1 + VBE(Q2) +
R3.sup.. I2
= r2.sup.. i1 + kT/q .sup.. ln(I2/Is2) + R3.sup.. I2 (1)
from the preceding equation:
I2 = kT/q.sup.. R3 (ln[I1/I2] + ln[Is2/Is1]) - (R2/R3) .sup.. I1
(2)
the condition to maintain the current I2 constant, against the
change of the current I1 due to the change of the source voltage is
that
.delta. I2/.delta. I1 = kT/q.sup.. R3 .sup.. 1/I1 - (R2/R3) = 0
that is,
R2.sup.. i1 = kT/q (3)
Accordingly, by arranging the value of resistor R2 to satisfy the
condition of the above equation, the current I2 can be maintained
constant irrespective of fluctuations of the current I1. Taking a
temperature of 25.degree.C. for instance, the value of resistor R2
may be arranged to produce about 26 mV across both terminals of the
resistor R2 to fulfill the condition of the above equation.
Relations between the absolute temperature in this circuit and the
collector current of the transistor Q2 will be described hereunder.
Generally, the following relations exist between the base-emitter
voltage VBE of a transistor and the emitter current Ie:
Vbe = (kT/q) ln ([Ie/Is] - 1) .apprxeq. (kT/q) ln Ie - (kT/q) ln Is
(4)
By differentiating both sides of the equation with respect to the
absolute temperature T, the temperature coefficient of VBE can be
obtained as follows:
dVBE/dT = (k/q) ln Ie - (k/q) ln Is - (kT/q) .sup.. d ln Is/dT
= vbe/t - (kT/q) .sup.. d ln Is/dT (5)
as is shown in the curve of FIG. 3 indicating the preceding
characteristic, the temperature coefficient of VBE proves that the
larger VBE is, the smaller the absolute value of the temperature
coefficient dVBE/dT is. Now in FIG. 2, a difference is created in
the current density in each emitter layer of both transistors Q1
and Q2, by regulating the values of the currents I1 and I2 through
properly selecting the value of each of the resistors R1 and R2, or
by creating a difference in the area of each emitter region of the
transistors Q1 and Q2. By creating such a difference in current
densities, each base-emitter voltage VBE will show a value always
different from each other depending on the fluctuations of each
absolute temperature. For an example, the transistors Q1 and Q2
having sufficiently large amplification factors and the same
characteristics can be selected, and each value of the resistors
R1, R2 and R3 set so that at the temperature 25.degree.C., the
current I1 becomes 160 .mu.A, the voltage across the terminals of
the resistor R2 becomes 26 mV and the current I2 becomes 10 .mu.A.
Also set the voltage VBE of the transistor Q1 to be larger than
that of Q2 by about 71.2 mV, and the voltage across the resistor R3
at about 45.2 mV. As a result of these settings, the voltage VBE of
the transistor Q2 is smaller than that of the transistor Q1, and
hence, as shown in FIG. 3, the transistor Q2 has a larger absolute
value of temperature coefficient. Due to such a difference in the
temperature coefficients corresponding to the respective
base-emitter voltages VBE of the transistors Q1 and Q2, the
difference in the voltages VBE being 71.2 mV, the currents I1 and
I2 differ considerably. As a characteristic obtainable, in the case
of R3 = 0, that is, in case a voltage difference corresponding to a
voltage across the terminals of the resistor R2 appears between
each voltage VBE of the transistors Q1 and Q2, the relations
between the current I2 and the absolute temperature show a
near-proportional characteristic, as indicated by the broken line,
contrasted with the full line showing exact proportionate
characteristic in FIG. 4, the largest variation being about 15
percent seen at 243.degree.K.
In the preceding examples of numeral values, if the difference
between each voltage VBE of the transistors Q1 and Q2 is set at
several tens of millivolts and the voltage across the terminals of
the resistor R3 is set at about 30 mV, the variation becomes about
1 percent at 243.degree.K, and thus, in the usual temperature range
of from -20.degree. to +60.degree.C., a characteristic of high
precision can be obtained. Especially when the above-mentioned
difference of voltage VBE is set at about 100 mV and the voltage
across the terminals of the resistor R3 is set at about 75 mV, the
collector current of the transistor Q2 can be maintained
proportional to the absolute temperature with a wide range of from
about -30.degree.C. to about 60.degree.C.
The above explanation describes an example of the use of NPN
transistors. However, also in case of PNP transistors applied to
this invention, a current output proportional to the absolute
temperature can be stably obtained irrespective of fluctuations of
the source voltage. An example of a circuit of this invention
applying PNP transistors in a monolithic integrated circuit
(hereinafter called monolithic IC) will be explained in detail in
the following.
In general, with PNP transistors in the monolithic IC, the current
amplification factors are very low, being usually only in the order
of 2 to 5. Therefore, if a circuit corresponding to that of FIG. 2
is constituted only with such elements, it cannot perform its
function sufficiently. Accordingly, in the examples of FIGS. 5 and
6, circuits are provided wherein the emitter and the collector of a
PNP transistor on a monolithic IC is connected to the collector and
the base of another NPN transistor, respectively, both PNP and NPN
transistors being provided closely to each other on the same
monolithic IC. Since this circuit configuration performs an
equivalent function to the function of a PNP transistor of high
performance, the circuits of FIGS. 5 and 6 are constituted
considering this composition as an equivalent PNP transistor.
In FIG. 5, parts corresponding to those in FIG. 2 are designated
with the same symbols. To the collector of the equivalent PNP
transistor Q3 (namely, the emitter of the constituent-element NPN
transistor Q14) is connected the collector of the transistor Q2
shown in FIG. 2. On the other hand, the emitter of the equivalent
PNP transistor Q3 (namely, the point commonly connecting the
emitter of the constituent-element PNP transistor Q13 and the
collector of the element NPN transistor Q14) is connected to a
positive power source terminal E through a resistor R4.
A PNP transistor Q16 and an NPN transistor Q17, provided near the
PNP transistor Q13 and the NPN transistor Q14, respectively on the
same monolithic IC, constitute a second constituent circuit,
namely, a second equivalent PNP transistor Q4. Both bases of the
equivalent PNP transistors Q13 and Q16 are connected in common to
the emitter of a PNP transistor Q5 also on the same monolithic IC,
and the base of this transistor Q5 is connected to the collector of
said transistor Q2.
The emitter of the second equivalent transistor Q4 is connected to
the source terminal E through a resistor R5, and the collector of
the equivalent transistor Q4 (namely, the emitter of an NPN
transistor Q17 as a constituent element) is connected to the
negative source terminal through the load L. The emitter of the
transistor Q17 is also connected to the collector of said PNP
transistor Q5.
In said circuit, since the first and second equivalent transistors
Q3 and Q4 are similarly constituted by the transistors provided
closely to each other on the same monolithic IC, the current
amplification factors between both PNP transistors and those
between both NPN transistors, respectively, are considered to be
equal. Hence, the following relations are formed.
V34b = VBEQ(13) + R4 (I2' + IBQ(13))
= vbeq(16) + r5 (i3' + ibq(16))
therefore,
I3' = (r4/r5) i2' + (r4/r5) ibq(13) - ibq(16) + vbeq(13) -
vbeq(16)
wherein IBQ(13) and IBQ(16) are the base current of the transistors
Q13 and Q16, IBEQ(13) and IBEQ(16) are the base-emitter voltages of
the transistors Q13 and Q16, respectively, and I2' and I3' are
collector currents of the equivalent transistors Q3 and Q4, R4 and
R5 are resistances of resistors R4 and R5 in emitter circuits of
the equivalent transistors Q3 and Q4, respectively.
On the other hand, the base currents of the first and second
equivalent PNP transistors Q3 and Q4 flow in the transistor Q5,
respectively. However, these currents being very small, the
amplification factor of the transistor Q5 amounts to only about 1
to 2. On the other hand, the composite base current of the first
and second equivalent PNP transistors Q3 and Q4 is divided about
evenly and each bomes a part of the currents I2 of the transistor
Q2 and Q3 of the load L, respectively.
Now defining R4 = R5, and if the amplification factor of each
transistor of the same type is considered equal, then the operating
currents of the transistors Q13 and Q16 are equal. Hence, VBEQ(13)
= VBEQ(16), IBQ(13) = IBQ(16) and I2' = I3'.
Also I2 = I2' + (1/2) (IBQ(13) + IBQ(16))
I3 = i3' + (1/2) (ibq(13) + ibq(16))
hence, I3 = I2, and a current output faithfully responding to the
current output of the transistor Q2, which is proportional to the
absolute temperature, is obtained from the collector circuit of the
second equivalent PNP transistor Q4 as a load current which flows
through the load L.
In the example of this invention shown in FIG. 6, which is a
variation of the example of FIG. 5, the base of the transistor Q5
is connected to the base of the transistor Q2, the emitter of the
transistor Q5 is grounded through the resistor R6, the base of the
transistor Q14 in the first equivalent PNP transistor Q3 is
connected to the base of the NPN transistor Q6, the transistor Q6
is connected by its emitter to the collector of the transistor Q5
and is connected by its collector to the positive source E, and the
commonly connected bases of the first and second equivalent PNP
transistors Q3 and Q4 are connected to the emitter of the
transistor Q6 through diodes D1 and D2, respectively.
According to such circuit constitution as the above, the composite
base current of the first and second equivalent PNP transistors Q3
and Q4 becomes a part of the collector current of the transistor Q5
through the diodes D1 and D2. Hence, the difference between the
collector current of the transistor Q5 and the base currents of the
equivalent transistors Q3 and Q4 flow through the transistor Q6.
However, the transistor Q6 being an NPN transistor, its amplifying
factor is high and its base current is very small, and
consequently, it has almost no effect on the current I2. Moreover,
since the base currents of the first and second equivalent PNP
transistors Q3 and Q4 flow into the collector of the transistor Q5,
they give almost no effect on the currents I2 and I3. Hence, the
current I3 fluctuates similarly to the current I2, and therefore, a
current output (I3) which is proportional to the absolute
temperature can be supplied to the load L.
As has been made clear from the above explanations, according to
the present invention, a current output proportional to the
absolute temperature can be obtained stably irrespective of
fluctuations in the source voltage (E), and not only the
compensation of a circuit employing, for instance, a transistor can
be made very precisely, but also excellent merits can be achieved,
especially in the application to an integrated circuit.
* * * * *