U.S. patent number 3,827,829 [Application Number 05/240,451] was granted by the patent office on 1974-08-06 for sputter-ion pump.
This patent grant is currently assigned to Veeco Instruments Inc.. Invention is credited to Theodore K. Tom.
United States Patent |
3,827,829 |
Tom |
August 6, 1974 |
SPUTTER-ION PUMP
Abstract
In a sputter-ion pump employing a high vapor pressure electrode,
burn out of the high vapor pressure electrode is eliminated and the
inert gas pumping ability of the ion pump is significantly improved
by controlling the effective area of the high vapor pressure
electrode surface facing the discharge so as to modulate the
intensity of the ion beam arriving at the high vapor pressure
surface.
Inventors: |
Tom; Theodore K. (Sunnyvale,
CA) |
Assignee: |
Veeco Instruments Inc.
(Plainview, NY)
|
Family
ID: |
22906580 |
Appl.
No.: |
05/240,451 |
Filed: |
April 3, 1972 |
Current U.S.
Class: |
417/49 |
Current CPC
Class: |
H01J
41/20 (20130101) |
Current International
Class: |
H01J
41/00 (20060101); H01J 41/20 (20060101); F04b
037/02 () |
Field of
Search: |
;417/48,49 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Freeh; William L.
Attorney, Agent or Firm: Morgan, Finnegan, Durham &
Pine
Claims
What is claimed is:
1. A sputter ion vacuum pump comprising means forming a pump
chamber, an anode within said chamber, a sputtering electrode of
reactive gettering material disposed in operative relation to said
anode within said chamber, an electrode of relatively high vapor
pressure material disposed in operative relation to said anode and
said sputtering electrode within said chamber, means establishing
an electrical discharge field between said anode and said
electrodes with said anode being at an elevated potential relative
to said electrodes, means establishing a magnetic field extending
in the direction of said electrical field, said high vapor pressure
electrode comprising a plurality of spaced apart high vapor
pressure surfaces facing said anode and being adapted to yield
vapor atoms for ionization when heated by said pump discharge, and
low vapor pressure electrode means forming part of said high vapor
pressure electrode comprising a plurality of electrode elements
located in spaced apart relation intermediate said high vapor
pressure surfaces to thereby control the rate of vaporization of
said high vapor pressure electrode and prevent an excessive
intensification of said ion discharge.
2. A pump as defined in claim 1 wherein said high vapor pressure
electrode material is selected from the group consisting of
magnesium, manganese, barium, calcium, aluminum, strontium, cerium
and neodymium and combinations thereof and said low vapor pressure
material is selected from the group consisting of molybdenum,
tantalum, titanium and tungsten and combinations thereof.
3. A pump as defined in claim 2 wherein said sputtering electrode
and said high vapor pressure electrode are in the form of flat
parallel plates disposed on opposite sides of said anode, said low
vapor pressure electrode means comprising a plurality of elements
secured in spaced apart relation to the side of said high vapor
pressure electrode plate facing said anode.
4. A pump as defined in claim 2 wherein said high vapor pressure
electrode comprises a pair of flat parallel plates disposed on
opposite sides of said anode and wherein said sputtering electrode
and said low vapor pressure electrode means are comprised of a
plurality of low vapor pressure material elements extending in
spaced apart relation between and connecting said high vapor
pressure electrode plates, said elements partially covering the
facing surfaces of said high vapor pressure electrode plates.
5. A sputter ion vacuum pump comprising:
A. a pump chamber which may accumulate gases to be evacuated
therefrom;
B. an anode situated in the pump chamber;
C. a cathode constructed of a reactive gettering material situated
in the pump chamber in operative association with the anode;
D. means establishing an electrical field between the anode and
cathode in which the anode is maintained at an elevated potential
relative to the cathode;
E. means establishing a magnetic field in the direction of the
electric field, said magnetic field encouraging the interaction of
electrons with the gases within the pump chamber to form ions
thereof, said ions being urged by the electric field to bombard the
cathode, thereby causing reactive gettering material to be
sputtered therefrom;
F. an electrode constructed of high vapor pressure material which
is maintained at a potential relatively lower than the anode and
situated in the pump chamber in a position where it will be heated
by the ionic discharge of the pump to a point at which vapor atoms
of said material will be emitted, said atoms being ionized by
interaction with electrons in the pump chamber to increase the
ionic bombardment of the cathode; and
G. means situated in the path of the ionic discharge to diffuse
said discharge from the high vapor pressure electrode, thereby
reducing the intensity of ion discharge to which the high vapor
pressure electrode material is exposed, said diffusing means being
constructed of a low vapor pressure material.
6. A sputter-ion vacuum pump as described in claim 5 wherein the
low vapor pressure diffusion means comprises bars of low pressure
material placed on the high pressure electrode in the path of the
ion discharge.
Description
BACKGROUND AND BRIEF SUMMARY OF THE INVENTION
This invention relates to improvements in electronic vacuum pumps
of the cold cathode discharge type which operate on the principle
of ion sputtering, and more particularly to improvements in
sputter-ion pumps employing a high vapor pressure electrode as a
source of ions. Such a sputter-ion pump is taught by Lewis D. Hall
in the copending, commonly assigned application Ser. No. 231,828,
filed on or about Mar. 6, 1972, entitled "Sputter Ion Pumps" and
which is incorporated herein by reference.
In sputter-ion pumps, gas molecules are ionized and the ions
accelerated under the influence of an electric field to bombard a
sputtering electrode of reactive material. The ionized molecules
strike the electrode surface causing small amounts of reactive
material to become dislodged or sputtered with the resulting
sputtered material forming a thin film on a gettering surface
whereby the gas molecules are captured to provide the pumping
mechanism. Detailed discussions of the phenomena will be found in
the extensive literature on the subject. See, for example, U.S.
Pat. No. 2,967,257.
Generally speaking, the performance of ion pumps is dependent on
the rate of ionization. At high vacua, the number of molecules
available for ionization is relatively small, thus limiting pump
performance.
In the aforementioned Hall application entitled "Sputter Ion
Pumps," it is taught that the pumping performance of sputtering
pumps, especially at lower pressures, can be substantially improved
by heating a high vapor pressure material such as magnesium with
the pump discharge to produce atoms in the vapor phase and then
supplying the vapor atoms to the discharge to cause ionization
thereof and consequent bombardment of the reactive sputtering
cathode to increase sputtering and pumping speed. I have
discovered, however, that certain high vapor pressure electrode
assemblies in the practice of the Hall invention have a tendency to
burn out under certain operating conditions.
In accordance with the present invention, I have found that during
pump start-up at pressure ranging from about 10 microns to about
10.sup.-.sup.4 torr the heat generated by the pump discharge can be
so intense that too many atoms from the high vapor pressure
material are vaporized and that these atoms are ionized and
contribute further to the intensity of the ion beam which in turn
causes further heating of the high vapor pressure electrode,
releasing still a larger number of high vapor pressure atoms for
further ionization. This snow-balling effect eventually generates
discharge intensities in the order of half a million amps per torr,
causing the high vapor pressure electrode to burn out.
In accordance with my present invention the problem of high vapor
pressure electrode burn-out is eleminated by controlling the
effective area of the high vapor pressure cathode surface facing
the pump discharge. In one embodiment this is accomplished by
lining the high vapor pressure electrode with relatively low vapor
pressure material such a tungsten, molybdenum, tantalum or titanium
in a suitable configuration so as to diffuse the ion beam arriving
at the cathode surface. With a suitable arrangement of low vapor
pressure material to high vapor pressure material, the rate of
vaporization of the high vapor pressure atoms is regulated or
modulated to the extent that the problem of cathode burn-out is
eliminated under actual operating conditions.
Another embodiment of the invention employs rods or strips of
gettering material to connect electrodes of high vapor pressure
material to thereby control the effective surface area thereof
exposed to pump discharge, while a third embodiment involves
dispersing rods or strips of the high vapor pressure electrode
material on a substrate of gettering material. A final embodiment
of the invention involves disposing rods or strips of the high
vapor pressure material between sputtering electrodes axially in
the direction of the E and B fields in the pump.
The electrode structures of the present invention have been found
not only to eliminate the burn-out problem which I perceived, but
have also been found to significantly improve the ability of the
pump to evacuate inert gases.
BRIEF DESCRIPTION OF DRAWINGS
Having summarized the invention, there follows a detailed
description with reference for illustrative purposes to the
accompanying drawings forming part of the specification, of
which:
FIG. 1 is a partially diagrammatical cross-sectional view of an
improved sputter-ion pump in accordance with the present invention;
and
FIGS. 2, 3 and 4 are views similar to FIG. 1, illustrating three
alternate ion pump electrode assemblies embodying the present
invention.
DETAILED DESCRIPTION
An ion pump embodying the present invention is illustraded in FIG.
1. The pump is provided with an envelope 10 formed with an inlet 11
to a pump chamber 13 wherein the pumping elements are housed. The
pumping elements include a cellular anode 15 formed of a plurality
of axially aligned anode cells 14, and a sputtering electrode 16
disposed to one side of the anode 15. Electrode 16, which is
constructed of a reactive gettering material such as titanium, is
illustratively in the form of a flat plate extending substantially
parallel to the major plane of the anode 15, providing a
perpendicular surface to the axial discharges of the individual
anode cells 14.
A high voltage source 18 is connected to the anode 15 through an
insulator 21, while the sputtering electrode 16 is connected to a
lower potential, illustratively shown as ground, through an
insulator 22. Two magnetic core pieces 19 and 20 oppositely
disposed outside of envelope 10 establish magnetic field B within
the chamber 13 extending axially along the anode cells 14 in the
direction shown in conventional manner.
Assuming the pressure in chamber 13 has been roughed (reduced) to
10.sup.-.sup.2 torr or below, the conventional aspect of operation
of the ion pump is as follows. Upon establishing a sufficiently
high potential on the anode 15 relative to the sputtering cathode
16 (e.g., +5 kv), a discharge is produced which results in a flow
of electrons from the cathode to the anode. The magnetic field
causes the electrons to follow a spiral path and en route they
collide with molecules of the gas being evacuated present in the
space between the two electrodes, thus converting the molecules
into positive ions which are attracted to the negatively charged
sputtering electrode 16. The ionized particles strike the
sputtering electrode causing reactive material to sputter from the
cathode surface and deposit as a thin film, principally on the
anode surface. The gettering action of this thin reactive film
provides the principal mechanism by which gas molecules are pumped.
As will be appreciated, it is important in the pump operation that
this thin reactive film be continuously renewed by sputtering.
It can be seen, however, that at low pressures there are relatively
few molecules available for ionization and sputtering. In
accordance with the invention of the previously referred to
copending Hall application, the ion pump is provided with a
separate high yield source of metallic atoms in the gas phase for
ionization and sputtering comprising a metal having a relatively
high vapor pressure, e.g., magnesium or manganese. The high vapor
pressure metal is heated to yield atoms in the vapor phase which
are ionized in the discharge for sputtering. Localized heating is
conveniently accomplished by the pump discharge.
Referring again to the FIG. 1, the high vapor pressure metallic
source is embodied as a second electrode 17 connected to ground
through the insulator 22, as shown. The high vapor pressure
electrode 17 is illustratively in the form of a flat plate disposed
in parallel relation to the sputtering electrode 16 on the opposite
side of the anode 15.
It has been found that the separate atomic source provided by the
high vapor pressure electrode gives improved performance over the
entire pump operating range. Contrary to what might be expected,
the presence of the high vapor pressure material in the vacuum
chamber does not have a limiting effect on the ultimate pressures
attainable.
As described above, I have perceived that there is a distinct
tendency for the high vapor pressure electrode material 17 of FIG.
1 to burn out under certain operating conditions. This infirmity
may be overcome, in accordance with the present invention, by
controlling the effective area of the high vapor pressure electrode
which is exposed to pump discharge to thereby eliminate the
possibility of burn-out. One embodiment is illustrated in FIG. 1
wherein a series of rods 12 of relatively low vapor pressure
material are disposed on the surface of the high vapor pressure
electrode material facing the pump discharge. The rods 12 are
affixed to the face of electrode 17 by, for example, welds.
FIG. 2 illustrates an alternate electrode assembly of the present
invention. The embodiment of FIG. 2 comprises a cellular anode 15
substantially similar to that of FIG. 1. Disposed on opposite sides
of the cellular anode 15 are high vapor pressure electrodes 17
which are illustratively in the form of flat plates extending
parallel to the major plane of the anode 15. A plurality of
perpendicular rods or strips of reactive gettering material 16
extend axially through the anode cells 14 to connect the two plates
17. The high vapor pressure electrodes 17 and the sputtering
electrodes 16 are connected to ground in the manner shown. The rods
or strips of relatively low vapor pressure gettering material 16
function to control the effective surface area of the high vapor
pressure electrodes 17 facing the pump discharge while
simultaneously functioning as sources of gettering material. Thus
the danger of burn-out of the high vapor pressure electrodes 17 is
eliminated.
In the embodiment of FIG. 3, the electrode assembly includes a
cellular anode 15 and a pair of approximately parallel oppositely
disposed sputtering electrode plates 16 formed of reactive
gettering material. Depending from one of the electrodes 16 towards
the anode 15 in axial alignment with the anode cells 14 are a
plurality of high vapor pressure electrodes 17 formed of a suitable
high vapor pressure material. The problem of burn-out of the high
vapor pressure material electrodes is thus solved by dispersing the
rods or strips of the high vapor pressure material on a substrate
of reactive gettering material.
A fourth embodiment of the present invention is illustrated in the
electrode assembly of FIG. 4 which includes a cellular anode 15 and
a pair of oppositely disposed sputtering electrode plates 16 formed
of reactive gettering material. A plurality of perpendicular rods
or strips of high vapor pressure material 17 extend axially through
the anode cells 14 substantially parallel to the E and B fields in
the pump to connect the two sputtering electrodes 16. In this
manner the danger of high vapor pressure electrode burn-out is
overcome.
The invention is more particularly defined in the appended
claims.
* * * * *