U.S. patent number 3,814,993 [Application Number 05/306,786] was granted by the patent office on 1974-06-04 for tuneable infrared photocathode.
This patent grant is currently assigned to The United States of America ss represented by the Secretary of the Navy. Invention is credited to Andrew J. Kennedy.
United States Patent |
3,814,993 |
Kennedy |
June 4, 1974 |
TUNEABLE INFRARED PHOTOCATHODE
Abstract
A tuneable field assisted photocathode structured as a three
layer double heterojunction device with a low work function cesium
oxide coating on the electron emitting surface. An internal field
assistance bias aids the flow of electrons from a narrow bandgap
region, where they are photo-generated, to the wider bandgap
negative electron affinity surface region for vacuum emission.
Inventors: |
Kennedy; Andrew J. (Lorton,
VA) |
Assignee: |
The United States of America ss
represented by the Secretary of the Navy (Washington,
DC)
|
Family
ID: |
23186832 |
Appl.
No.: |
05/306,786 |
Filed: |
November 15, 1972 |
Current U.S.
Class: |
257/10; 257/201;
257/441; 313/542 |
Current CPC
Class: |
H01J
1/34 (20130101); H01J 2201/3423 (20130101) |
Current International
Class: |
H01J
1/02 (20060101); H01J 1/34 (20060101); H01l
015/00 () |
Field of
Search: |
;317/234N,235AC,235AP
;250/211J |
References Cited
[Referenced By]
U.S. Patent Documents
Other References
Shih et al., I.B.M. Tech. Discl. Bull., Vol. 11, No. 12, May
1969..
|
Primary Examiner: Edlow; Martin H.
Attorney, Agent or Firm: Kelly; Edward G. Berl; Herbert Lee;
Milton
Claims
I claim:
1. An epitaxially graded multijunction photoemitter responsive to
radiation in the 1-2 micrometer spectral region comprising a three
layer double heterojunction structure having an essentially
constant lattice spacing throughout, wherein:
a first layer of light absorbing III-V compound alloy semiconductor
material having a narrow bandgap in the range of 0.65 - 0.8 eV
functions as a detector of incident infrared radiation;
a second layer of III-V compound alloy semiconductor material
having a wide bandgap in the range of 1.65 - 1.75 eV is
heteroepitaxially grown on the first layer and functions to block
the hole current and aid the electron current when biased
positively with respect to the detector layer;
a third layer of III-V compound alloy semiconductor material having
an intermediate bandgap, with respect to layers one and two,
epitaxially grown on the second layer for functioning as a high
quantum efficiency electron emitter;
first and second electrically conductive terminals attached
respectively to the first and third layers of the heterojunction
structure for effecting a positive biasing across the second layer
with respect to the detector layer.
2. The epitaxially graded multijunction photoemitter of claim 1
wherein the three layers of III-V compound alloy semiconductor
material consist of GaSbAs, AlSbAs and AlGaSbAs respectfully.
3. The epitaxially graded multijunction photoemitter of claim 1
wherein the three layers of III-V compound alloy semiconductor
material consist of InAlAs, AlSbAs and AlInAsSb respectfully.
4. The photoemitter of claim 2 wherein the specific composition of
the III-V quaternary compound alloys are determined in accordance
with the alloy composition of Ga.sub.1.sub.-y Al.sub.y
As.sub.1.sub.-x Sb.sub.x as read from the design curve of FIG.
2.
5. The photoemitter of claim 3 wherein the specific composition of
the III-V quaternary compound alloys are determined in accordance
with the alloy composition of In.sub.1.sub.-y Al.sub.y
As.sub.1.sub.-x Sb.sub.x as read from the design curve of FIG.
4.
6. The photoemitter of claim 1 further including a layer of low
work function material immediately absorbed on the exposed surface
of the third layer of the electron emitting semiconductor material.
Description
The invention described herein may be manufactured, used, and
licensed by or for the Government for governmental purposes without
the payment to me of any royalty thereon.
BACKGROUND OF THE INVENTION
This invention disclosure relates to photocathodes, and more
particularly to tuneable field assisted photocathodes responsive to
infrared radiation.
Prior art attempts to fabricate high performance field assisted
infrared photocathodes of III-V quaternary compounds have not met
with very great success. Some of the major problems lie in the
field enhancement area where external field enhancement induces
only a small threshold extension that renders such a method
practically useless. Moreover, the high fields required to produce
this effect in proximity focused image intensifier tubes usually
create arcing, due to the microscopic irregularities either on the
cathode or on the phosphor surfaces. Geometric effect at these
points of irregularities increase the electric field locally that
invaribly produces electrical breakdowns. Even though internal
field enhancement with back biased p-n junctions will induce a
bandgap limited threshold extension, it suffers from a significant
reduction in area efficiency which is primarily due to the fact
that efficient photoemission takes place only along a strip on the
p side of the junction regions where the work function lowering is
the most effective.
The graded bandgap approach is one of the most elegant attempts to
overcome these problems, but it suffers from the technical
difficulties in applying a bias potential across the device. This
device is essentially a low to medium conductor and the heating due
to power consumption generally renders it inoperative.
Most of the proposed homo-heterojunction and heterojunction devices
of different materials are conceptually feasible, but the current
transport across the junctions under low level injection is very
low. Moreover, the impurity doping associated with the
interdiffusion of materials at the heterojunction interface creates
a built in potential barrier which essentially blocks the current
flow.
SUMMARY OF INVENTION
The present invention very effectively overcomes the disadvantages
of the prior art while simultaneously encompassing all the
advantages thereof. Transporting of the photogenerated electrons
through the heterojunctions is significantly enhanced by
fabricating both heterojunctions of ternary and quaternary III-V
semiconductors that have identical lattice constants and by
utilizing an emitter layer having a wide enough bandgap to provide
for a high efficiency negative electron affinity photoemitter.
Moreover, with these types of materials, the heterojunctions can be
graded over the composition range from one bandgap to the other,
which eliminates the notch and spike type conduction band edge
discontinuities created by an abrupt change in the electron
affinities.
The general purpose of this invention is to effect the development
of high efficiency photocathodes sensitive in the 1 - 2 micrometer
spectral range. This purpose is accomplished by structuring a three
layer double heterojunction photocathode such as
pInAlAs/nAlSbAs/p+AlInAsSb or pGaSbAs/nAlSbAs/p+AlGaSbAs which has
a constant lattice constant and operates on a field enhanced
electron transfer principle from the narrow to the wider bandgap
regions for effecting an efficient vacuum emission of
photoelectrons generated in the 0.65 - 0.7 electron volt bandgap
region, which obviously is too narrow for direct emission over the
vacuum surface barrier.
BRIEF DESCRIPTION OF THE DRAWINGS
The exact nature of this invention will be readily apparent from
consideration of the following specification relating to the
annexed drawings wherein:
FIG. 1 depicts a cross section view of a three layer, double
heterojunction infrared photocathode;
FIG. 2 shows design curves of the electronic properties of the
Ga.sub.1.sub.-y Al.sub.y As.sub.1.sub.-x Sb.sub.x quaternary alloy
system;
FIGS. 3A, 3B and 5A, 5B portray energy band diagrams for field
assisted semitransparent or opaque infrared photocathode
sensitivities out to 1.6 and 1.8 microns respectively; and
FIG. 4 shows design curves of the electronic properties of the
In.sub.1.sub.-y Al.sub.y As.sub.1.sub.-x Sb.sub.x quaternary alloy
system.
DESCRIPTION OF THE INVENTION
The double heterojunction type field assisted photoemitter shown in
FIG. 1 is designed to operate in the 1 - 2 micrometer spectral
region where currently no direct vacuum photoemission is possible.
The reason for this spectral range limitation of state-of-the-art
photocathodes is that even the most suitable photoelectronic
materials (e.g. GaAs, InP, GaInAs, InAsP and Si) with the lowest
work function cesium oxide surface treatment exhibit an
approximately 1.1 electron volt surface barrier. This corresponds
to a threshold of 1.1 micrometers. However, vacuum photoemission
past 1.1 micrometers can be obtained if the generation of
photoelectrons occur in a 0.6-0.7 electron volt bandgap material
and if these electrons are transferred into another semiconductor
with a bandgap of 1.3-1.4 electron volts from which the probability
of escape is high.
The principle of operation of the device in the present invention
fully meets these requirements. The narrow bandgap (0.7-0.8
electron volts) GaSbAs or InAlAs layers serve as the detector of
infrared radiation and the cesium oxide treated AlGaSbAs or
AlInAsSb layers as the high quantum efficiency photoemitter.
Sandwiched between the detector and the emitter is wide bandgap
(1.65-1.75 electron volt) AlSbAs layer which has an approximately
0.3-0.5 electron volt larger barrier to hole current than to
electrons. Thus, the flow of electrons is aided but the hole
current is blocked when the emitter layer is biased positively with
respect to the detector layer.
Experiments with heterojunctions has shown that in the case of
abrupt junctions at low injection levels the transport efficiency
is low. This is because either of the spike and notch type
discontinuities in the conduction band as predicted by theory, or
due to strain induced interface states that can take up some of the
charge. Actually interface states could be an advantage since the
empty donor like states are positive which should aid the initial
current flow. Even when these type of states are occupied they are
neutral as opposed to the acceptor like states which when occupied
are negative and thus would reduce or block the flow of electron
current. However, the problem associated with the surface or
interface states can be significantly reduced by grading the
hetero-junctions as shown in FIG. 3B and FIG. 5B.
The fabrication of graded junctions is actually the most preferred
method for the following reasons; 1. reduces the strain due to
small variations in the lattice constants and thermal expansion
coefficient, 2. the width of the middle layer is reduced and thus
the charge transfer efficiency is increased, and 3. higher level of
n-type doping of the center layer is possible. Actually, the net
barrier height to the hole current depends strongly on the n-type
doping of the center layer, but the level of doping must satisfy
the requirement that the entire region is totally depleted of
electrons in order not to produce cold cathode action. In this case
any free charge is only a contribution to the dark current (noise).
Thus, if by grading the heterojunctions the center layer is made
very narrow, on the order of a few hundred Angstroms, heavy n-type
doping is allowable, since the requirement to create charge
neutrality in both heterojunction depletion regions will totally
deplete the center layer.
Referring specifically to FIG. 1, one embodiment of the envisioned
photocathode is shown in cross section fabricated as a functional
structure in a mesa configuration. The particular design
configuration is not critical to the operation of the device such
that variation thereof may be made to meet the particular criteria
required by the various uses thereof. A biasing source 10 is shown
connected in a biasing relationship across terminals 11 and 12.
Terminal 12 is conductively attached to the light absorbing layer
13 and terminal 11 is likewise connected to the electron emitting
layer 14. With the polarity of bias shown, the transport of
photogenerated electrons is greatly enhanced across the double
junction at the interfaces of layers 13, 14 and 15. In the
particular embodiment shown, layer 13 is of a p-type material
having a narrow bandgap. A portion of one surface of layer 13 may
be treated to produce a passivated entrance surface for the
radiation impinging thereon. Surface treatment for passivation is a
well known practice in the art and will not be further explored
here.
Layer 15, hetero-epitaxially grown on layer 13 is a totally
depleted wide bandgap n-type material which possesses the sole
function of blocking the hole current during biasing, whereas layer
14 is a p-type intermediate bandgap material functioning as an
electron emitter and the thin layer 17 is a low work function
material, in this instance a coating of cesium oxide.
An insulating layer 18 of silicon nitride or silicon dioxide
completely encapsulates electrical contacts 11 and 12 to prevent
the shorting out of the junctions.
The design curves of FIGS. 2 and 4 show the electronic and
crystallographic properties of the Ga.sub.1.sub.-y Al.sub.y
As.sub.1.sub.-x Sb.sub.x and In.sub.1.sub.-y Al.sub.y
As.sub.1.sub.-x Sb.sub.x quarternary alloy systems
respectively.
In the diagram the bandgap, electron affinity and crystallographic
lattice constant variations are superimposed on the alloy
compositional plane in a topological representation. The curves are
generated by plotting the bandgaps (E.sub.g) electron affinities
(x) and lattice constant (a.sub.o) values of the four individual
binary III-V components (i.e. GaAs, AlAs, AlSb and GaSb in the case
of FIG. 2 and InAs, AlAs, AlSb, and InSb in the case of FIG. 4) at
the corners of the rectangular alloy composition base plane. A
bandgap surface, an electron affinity surface and a lattice
constant surface is drawn across the corner points. In these three
dimensional diagrams the elevation represents the variations in the
bandgap, electron affinity and lattice constants as a function of
composition. Intercepts of these surfaces with a plane that is
parallel with the alloy composition plane will produce constant
bandgap, constant electron affinity and constant lattice spacing
lines. The orthogonal projection of these lines onto the
compositional base plane result in the topological representation.
Moreover, the perimeter of the quaternary diagram represent the
variations in the electronic and crystallographic properties of
four different ternary alloy systems. (i.e. GaAlAs, AlAsSb, AlGaSb
and GaAsSb of FIG. 2 and InAlAs, AlAsSb, AlInSb and InAsSb of FIG.
4)
From the point of view of the three layer double heterojunction
photocathode the optimized set of parameters would provide the
largest bandgap range at a constant lattice spacing. Thus,
depending on the infrared threshold requirement of the detector,
the chemical composition of each of the three layers with
appropriate bandgaps can be determined by reading along a constant
lattice spacing line on the diagram.
FIGS. 3A, 3B, 5A and 5B are energy band diagrams for a field
assisted semitransparent or opaque infrared photocathode that is
sensitive out to 1.6 microns for FIGS. 3A and 3B and to 1.8 microns
for FIGS. 5A and 5B. The electronic material used is the
Ga.sub.1.sub.-y Al.sub.y As.sub.1.sub.-x Sb.sub.x quaternary alloy
system shown in FIG. 2 and the In.sub.1.sub.-y Al.sub.y
As.sub.1.sub.-x Sb.sub.x quaternary alloy system in FIG. 4. To
optimize the electronic properties of the material and also to
satisfy the bandgap requirements of the device, the alloy is graded
along the 6 angstrom and 5.98 angstrom constant lattice spacing
lines, respectively. This results in an alloy composition from FIG.
2 of GaSb.sub.80 As.sub.20 /AlSb.sub.75 As.sub.25 /Al.sub.70
Ga.sub.30 Sb.sub.75 As.sub.25 for the three layers and an alloy
composition from FIG. 4 of In.sub.80 Al.sub.20 As/AlSb.sub.70
As.sub.30 /Al.sub.70 In.sub.30 As.sub.50 Sb.sub.50 for the three
layers.
FIGS. 3A and 5A show interface - state free energy band diagrams of
the p-n-p hyper abrupt heterojunction structure. Eg denotes the
magnitude of the energy bandgap and .DELTA.E.sub.c the conduction
band edge discontinuities. The surface of the emitting layer is
activated to a state of negative electron affinity. FIGS. 3B and 5B
show the same heterojunction structure as in 3A and 5A respectively
but it is graded to eliminate the notch and spike type
discontinuities, .DELTA.E.sub.c and .DELTA.E.sub.c , in the
conduction band edge. The graded potential, E.sub.B due to electron
affinity variation can be reduced and eliminated by the application
of an external voltage. The ability to block the hole current
during biasing is provided by the barrier to holes E.sub.B being
0.3 to 0.5 volts larger than the barrier to electrons E.sub.B .
Various modifications are contemplated and may obviously be
resorted to by those skilled in the art without departing from the
spirit and scope of the invention, as hereinafter defined by the
appended claims, as only one embodiment thereof has been
disclosed.
* * * * *