U.S. patent number 3,805,735 [Application Number 05/348,258] was granted by the patent office on 1974-04-23 for device for indiffusing dopants into semiconductor wafers.
This patent grant is currently assigned to Siemens Aktiengesellschaft. Invention is credited to Wolfgang Dietze, Konrad Reuschel, Manfred Sub.
United States Patent |
3,805,735 |
Reuschel , et al. |
April 23, 1974 |
DEVICE FOR INDIFFUSING DOPANTS INTO SEMICONDUCTOR WAFERS
Abstract
In a silicon tube whose diameter is two to three times larger
than the diameter of the wafers to be diffused, a rod is situated
centrally and in parallel to the tubular axis and has channels
extending in parallel to the rod axis. These channels define,
together with the tubular wall, cages for the stacks of wafers. In
this manner, several parallel wafer stacks may be diffused in a
single silicon tube. Favorable degrees of utilization of the
silicon tube are obtained with five and six parallel stacks of
wafers.
Inventors: |
Reuschel; Konrad (Vaterstetten,
DT), Dietze; Wolfgang (Munich, DT), Sub;
Manfred (Munich, DT) |
Assignee: |
Siemens Aktiengesellschaft
(Munchen, Erlangen, Berlin, DT)
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Family
ID: |
27182764 |
Appl.
No.: |
05/348,258 |
Filed: |
April 5, 1973 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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108723 |
Jan 22, 1971 |
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Foreign Application Priority Data
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Jul 27, 1970 [DT] |
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2037173 |
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Current U.S.
Class: |
118/728; 118/733;
219/638; 65/409; 118/900 |
Current CPC
Class: |
C30B
31/14 (20130101); C30B 31/165 (20130101); Y10S
118/90 (20130101) |
Current International
Class: |
C30B
31/14 (20060101); C30B 31/00 (20060101); C30B
31/16 (20060101); C23c 013/08 () |
Field of
Search: |
;118/48-49.5,500,503
;148/174,175 ;117/16R,16A,16C,16D,107,17.2R,17.2P ;219/10.49 |
References Cited
[Referenced By]
U.S. Patent Documents
Other References
IBM Technical Disclosure Bulletin, "Centrifuge Rack" Auslander,
H.O.-Vol. 8, No. 8[ 1-1966]. .
IBM Technical Disclosure Bulletin, "Diffusion Using A Ternary Alloy
Salt" Chamberlin et al.-Vol. 6, No. 1[ 6-1963]..
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Primary Examiner: Kaplan; Morris
Attorney, Agent or Firm: Lerner; Herbert L.
Parent Case Text
This is a (X) continuation, of application Ser. No. 108,723, filed
Jan. 22, 1971, now abandoned.
Claims
We claim:
1. A device for the indiffusion of dopants into semiconductor
wafers comprising a heatable tube of a semiconductor material, an
inner wall in said tube, said tube being adapted to accommodate
wafers which are heated to diffusion temperature in vacuum or inert
gas, means for providing a dopant source, and an elongated holding
device for a stack of semiconductor wafers of a material which does
not react with the semiconductor discs at diffusion temperature
within said tube, said holding device together with the inner wall
having, parallel to its longitudinal axis, at least one recess,
which tube along the inner wall thereof and recess forms a channel
for holding a stack of wafers.
2. The device of claim 1, wherein the holding device constitutes a
rod parallel to the longitudinal axis of the heatable tube, at
least one recess along the circumference of said holding device
parallel to its longitudinal axis, said recess together with the
inner wall of the tube forms a cage for the semiconductor wafers
whereby the semiconductor wafers are kept in position perpindicular
to the longitudinal axis.
3. The device of claim 2, wherein the said rod has three recesses
giving the rod, along its cross-section, the shape of a
three-pointed star.
4. The device of claim 2, wherein the said rod has five recesses
giving the rod, along its cross-section, the shape of a
five-pointed star.
5. The device of claim 2, wherein the said rod has six recesses
giving the rod, along its cross-section, a six-pointed star.
6. The device of claim 2, wherein said rod has a crescent shaped
cross-section.
7. The device of claim 1, wherein the inner wall of the tube has
recesses parallel to the tube axis and a rod parallel to the tube
axis together with the recesses form a cage for the semiconductor
wafers whereby the semiconductor wafers are kept in position.
8. The device of claim 7, wherein the rod has a circular cross
section.
9. The device of claim 7, wherein the rod has the same number of
recesses as the tube wall and the recesses of the rod and the tube
wall are in coincidence with each other.
10. The rod of claim 9, wherein the device has a star-shaped cross
section.
11. The device of claim 2, wherein the rod is provided with sealing
discs, between which the semiconductor wafers are arranged, the
thickness of the sealing discs is at least double the thickness of
the semiconductor wafers, and the sealing discs are of a material
which, at diffusion temperature, does not react with the
semiconductor wafers.
12. The device of claim 11, wherein at least one of the rod and the
sealing discs is of the same material as the semiconductor
wafers.
13. The device of claim 11, wherein at least one of the rod and the
sealing discs is of sintered material.
14. The device of claim 11, wherein at least one of the rod and the
sealing discs is of sintered silicon carbide.
15. The device of claim 11, wherein at least one sealing disc is
provided with openings, the area of said openings constitute
between 0.5 and 20 percent of the area of said sealing disc.
16. The device of claim 11, wherein the sealing disc is a
thickening at the end of the rod.
17. The device of claim 2, wherein the rod is perpendicular to the
longitudinal axis of the tube and the semiconductor wafers lie
horizontally thereto.
Description
The present invention relates to a device for the indiffusion of
dopants into semiconductor wafers, with a heatable tube of the same
semiconductor material, adapted to accommodate wafers which are
heated to diffusion temperature, in a vacuum or in a protective
gas.
Such a device has previously been suggested. It has considerable
advantage over devices wherein the semiconductor wafers are placed
in a quartz tube. One advantage is, for example, the fact that the
semiconductor material, i.e., silicon can withstand higher
temperatures than quartz. As a result thereof, it is possible to
effect diffusion in a tube of semiconductor material, at higher
temperatures than in quartz tubes, thus speeding up the diffusion
process. When diffusion is effected in a vacuum, quartz tubes
soften at diffusion temperatures and are compressed by the outer
air pressure. This may bend and tension the semiconductor wafers,
situated in an evacuated quartz tube leading to disturbances and to
dislocations in the crystal lattice of the semiconductor material.
Recombination centers have a tendency to deposit at such
dislocations, which has an adverse effect upon the qualities of the
semiconductor components produced of this semiconductor material.
Therefore, quartz discs having a diameter that is larger than the
diameter of the semiconductor wafers, are provided in the evacuated
quartz tubes which are also called quartz ampules. This prevents
both a collapse of the quartz ampule and mechanical influences upon
the semiconductor wafers. These support wafers must be relatively
thick and require much space in the interior of the quartz ampule
thereby losing much useful space. Support wafers are not necessary
in evacuatable semiconductor ampules since, at diffusion
temperatures, the latter are mechanically more stable than quartz
ampules.
Diffusion devices of semiconductor material, for example silicon,
have an additional advantage over quartz ampules insofar as the
semiconductor wafers may come into contact with the tubular wall,
without the disadvantage of causing undesired chemical reactions
between the material of the ampule or tube and the semiconductor
material, as is the case with quartz. Thus, the diameter of the
semiconductor wafers may be almost as large as the inside diameter
of the semiconductor tube.
This affords a good space utilization of the semiconductor tube. In
addition, the semiconductor wafers are kept in their position by
the inner wall of the tube so that mutual shifting of the wafers is
prevented. When a semiconductor tube is completely filled with
wafers, a twisting and bending of the wafers is reliably
prevented.
Such semiconductor tubes can be produced by pyrolytic dissociation
of a gaseous compound of said semiconductor material, in the
presence of a reduction gas, for example hydrogen. Up to now, this
method can be employed economically, only for larger tubular
diameters, for example about 30 mm. If semiconductor wafers of
smaller diameters are to be diffused in such tubes, the latter
cannot be maintained in position thus the wafers may become
mechanically stressed with resulting impairment of their electric
properties.
The object of the present invention is to present a device of the
afore-mentioned type, wherein it becomes possible to diffuse
semiconductor wafers, whose diameters are smaller than the inner
diameter of the semiconductor tube, without causing undesirable,
mechanical stresses of the semiconductor wafers.
Our invention provides a holding device inside the tube which,
together with the inner wall of the tube, forms a cage for the
semiconductor wafers. THe holding device is of a material which
does not react with the semiconductor wafers, at diffusion
temperature. The holding device, preferably, has a rod parallel to
the longitudinal axis of the tube. The rod is provided at its
circumference with at least one recess parallel to its longitudinal
axis. The recess, together with the wall of the tube, defines a
cage for the semiconductor wafers by which the semiconductor wafers
are kept in their position. The rod may, preferably, comprise over
its circumference three, five or six recesses which are so formed
that the rod has the cross section of a three, five or six-arm
star. The tube has, preferably, a circular cross section.
The holding device may also be provided with recesses parallel to
the tubular axis provided in the inner side of the tubular wall.
These recesses, together with a rod situated in the tube in
parallel to the tubular axis, define a cage for the semiconductor
wafers. This cage helps to keep the semiconductor wafers in their
position. The rod can then have a circular or star-shaped cross
section.
A preferred feature of the invention is found in the fact that the
rod is provided with two sealing discs where-between the
semiconductor wafers are positioned. The thickness of the sealing
discs is a multiple, at least double, of the thickness of the
semiconductor wafers. The sealing discs also consist of a material
which, under diffusion conditions, does not react with the
semiconductor wafers. The rod and/or the sealing discs may be of
the same semiconductor material as the semiconductor wafers, or may
consist of sintered material, such as silicon carbide, for example.
These sealing discs may have openings that may be somewhat smaller
than the interior surface of the tube or they may be so designed
that they seal the tube against the outer atmosphere.
The invention will be disclosed in greater detail with reference to
the Drawings, which show several embodiment examples.
In the Drawings:
FIG. 1 is a device of the afore-mentioned type;
FIGS. 2, 3, 4, 5, 9 and 10 are a respective cross section through
various embodiments of the invention;
FIGS. 6 and 7 are a longitudinal section through two embodiments of
the invention, and
FIG. 8 is a suitable design of the device according to FIGS. 6 and
7.
FIG. 1 schematically illustrates a device of the afore-mentioned
type, wherein semiconductor tube 1 is closed by a lid 2. The tube 1
accommodates semiconductor wafers with a diameter somewhat smaller
than the inside diameter of the tube. The semiconductor wafers 3
are held in place by sealing discs 4 and 5 so that no matter which
position is assumed by the tube 1, the semiconductor wafers 3 can
become neither twisted nor bent. The tube 1 contains a dopant
source 6 which, when the tube is heated by a heating coil 7, is
heated to diffusion temperature.
FIG. 2 shows a cross section through a first embodiment of the
invention. The same parts are provided here with the same reference
numbers, as the device according to FIG. 1. It is obvious that the
diameter of the wafers 3 is smaller than the inner diameter of tube
1. The semiconductor tube 1 is provided with a rod 8, positioned
parallel to its longitudinal axis. The rod is provided with a
recess 9 which lies parallel to its longitudinal axis. The recess 9
of the rod 8, together with the wall of the tube 1, defines a cage
wherein the semiconductor wafters 3 are maintained in position.
The rod consists of a material which does not react with the
semiconductor discs 3. Preferably, the rod may consist of the same
semiconductor material as the wafers 3. When the discs are made,
for example, of silicon, silicon is also selected for the rod.
However, the rod may also consist, for example, of silicon carbide,
SiC. If the rod 8 is of semiconductor material, one preferably
starts with a full rod whose recess is obtained through an
appropriate mechanical processing. When another work material is
used, such as for example silicon carbide, the rod is preferably
sintered.
FIG. 3 shows a device, wherein a rod 10 is arranged in the tube 1
and is provided with three recesses. This rod has a cross section
shaped in form of a three-pointed star. The recesses are indicated
as 11. The recesses 11, together with the wall of the tube 1,
define cages wherein the semiconductor wafers 3 are kept in
position. It is obvious that in this embodiment three parallel
stacks of wafers are accommodated. The rod 10 may, in this case,
also be comprised of the same semiconductor material as the wafers
3. The recesses may be produced, for example, by grinding out a rod
of circular cross section. This is particularly simple when the
areas which border the recesses 11, are made flat. They may also be
of sintered material, such as for example, silicon carbide SiC. The
recesses may be worked in, in this case, directly during the
sintering processes through an appropriate sinter form.
FIG. 4 shows a device with a rod 12, which has divided over its
periphery, five recesses 13, running parallel to the longitudinal
axis. The rod 12 has a cross section like a five-pointed star. The
recesses 13 are formed by faces of the rod which, preferably, are
also flat. In this device, five parallel stacks of semiconductor
wafers 3 may be accommodated. These stacks are fixed in their
position relative to each oter, as well as relative to the tube 1.
The utilization of the tube is relatively good as the cross section
of the tubular interior, that is occupied by the semiconductor
wafers, is relatively large compared to the entire interior area of
the tube.
FIG. 5 shows another embodiment wherein a rod 14 is used and is
provided with 6 recesses, distributed over its circumference. In
this device, tube 1 is also relatively well utilized.
In the illustrated embodiments, the position of the semiconductor
wafers is secured. Thus, individual discs can never slide out of
the stack.
FIG. 6 shows, in longitudinal section, the embodiment according to
FIG. 5. The same parts are provided here with the same reference
numerals as in FIG. 5. It is obvious that the recesses 15 are
shorter than the rod 14. Therefore, the latter has ends 16 and 17
above and below with greater dimensions and the original cross
section form, for example, a circular cross section, if prior to
the installation of the recesses 15 the rod 14 had a circular cross
section. The ends 16 and 17 limit longitudinally the recesses 15
and keep together the stacks defined by the semiconductor wafers 3.
This makes a twisting of the semiconductor wafers impossible. The
cages formed by the recesses and the tubular wall therefore remove
undesired mechanical stresses which may lead to a bending or
twisting of the semiconductor discs. A further improvement in the
adherence of the stacks is obtained so that the ends 16 and 17 are
provided with sealing discs 18, having a central bore. The diameter
of the bore of the sealing disc 19 is preferably such that it may
be pressed upon the end 17. The outside diameter of the disc 19 is
preferably somewhat smaller than the inner diameter of the tube 1,
so that the dopant contained in the dopant source 6, may reach the
semiconductor wafers 3. The other sealing disc 19 can simply be
placed upon the stacks.
FIG. 7 shows a longitudinal section through another embodiment of
the invention. An upper sealing disc 20 is presented. This disc is
provided with a dense surface 21. Together with dense area 22, the
sealing disc 20 is seated upon the upper rim 22 of the tube 1 and
seals the same to the outside.
The semiconductor wafers 3 are stacked in a unit comprising the rod
14 and the end discs 18, 19 or 20, 19. The unit with the wafers is
then accommodated in the tube 1 and the latter is gas-tightly
sealed. The devices of FIGS. 6 and 7 may also be arranged
horizontally rather than perpendicularly, as illustrated.
As shown in FIG. 8, the lower sealing disc 19 may have openings 23
and/or recesses 24, through which the dopant has access to the
semiconductor wafers 3. It suffices, as a rule, that the openings
and/or the recesses occupy an area which amounts to approximately
0.5 and 20 percent of the area of the sealing disc 19. The sealing
discs are of a material which does not react with the semiconductor
wafers, that means it is made of the same semiconductor material
or, for example, of sintered material, such as silicon carbide SiC.
The features of FIGS. 6 and 7 and 8 are applicable not only to the
embodiment of FIG. 5, but also apply for all other embodiments.
The embodiments of FIGS. 6 and 7 are, accordingly, also suitable
for diffusion in a flowing medium, wherein an inert gas which is
charged with a dopant, is passed through the tube. To this end, the
tube must be open at both sides. The sealing discs may then be
constructed on both sides just as the sealing disc 19. It is also
possible, however, to accommodate the tube 1 in a quartz ampule and
to evacuate the same or to fill it with a protective gas. The tube
1 need not be sealed gas-tightly, in this case.
FIG. 9 illustrates another embodiment of the invention wherein
recesses 34 are provided on the inside of a tube 30. These recesses
form a cage together with a rod 31, positioned parallel to the axis
of the tube. The cage secures the position of the semiconductor
wafers 3. Tube 30 is of the same semiconductor material as the
discs 3, while rod 31 may be of the same semiconductor material or
even a sintered material, such as for example, SiC. This rod has a
circular cross section.
In the embodiment shown in FIG. 10, in addition to the recesses 34,
there is provided a rod 32 which also has recesses 36. The recesses
34 are positioned opposite the recesses 36. The tube which is
indicated as 33, may comprise the same semiconductor material as
the wafers 3. It is also possible to produce the tube of sintered
material such as for example SiC, which does not react with the
material of the semiconductor wafers. since sinter material is not
gas tight, at the conditions which prevail during diffusion, it
becomes necessary, in this instance, to place the tube 33 with the
semiconductor wafers 3 and the rod 32, into a semiconductor tube 1,
made of silicon, for example.
The embodiments of FIGS. 3 to 10 make it possible to place several
charges of semiconductor wafers with variable characteristics, into
a single tube and to keep them separated from each other. It
should, of course, be realized that the space between the
semiconductor wafers, stacked on one another, is adequate for
diffusion of the dopant to all the wafers.
* * * * *