U.S. patent number 3,801,792 [Application Number 05/363,024] was granted by the patent office on 1974-04-02 for electron beam apparatus.
This patent grant is currently assigned to Bell Telephone Laboratories, Incorporated. Invention is credited to Lawrence H. Lin.
United States Patent |
3,801,792 |
Lin |
April 2, 1974 |
ELECTRON BEAM APPARATUS
Abstract
Various components of a conventional electron beam apparatus are
modified to achieve precise high-speed deflection and blanking of
the electron beam. The modified apparatus is designed to be
included, for example in a high-resolution automated electron beam
exposure system for integrated-circuit fabrication.
Inventors: |
Lin; Lawrence H. (Chatham,
NJ) |
Assignee: |
Bell Telephone Laboratories,
Incorporated (Murray Hill, NJ)
|
Family
ID: |
23428466 |
Appl.
No.: |
05/363,024 |
Filed: |
May 23, 1973 |
Current U.S.
Class: |
250/398;
250/492.1; 250/492.2 |
Current CPC
Class: |
H01J
29/46 (20130101); H01J 37/3007 (20130101) |
Current International
Class: |
H01J
37/30 (20060101); H01J 29/46 (20060101); H01j
037/00 () |
Field of
Search: |
;250/492,492A,310,311
;219/121EB ;313/84 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
Primary Examiner: Borchelt; Archie R.
Assistant Examiner: Church; C. E.
Attorney, Agent or Firm: Canepa; L. C.
Claims
What is claimed is:
1. In combination in an electron beam apparatus,
a source of a beam of electrons,
means including a plurality of successive lenses for successively
demagnifying said source, each of said lenses having a crossover
point respectively associated therewith,
means for deflecting said beam to any specified point on a work
surface that includes the crossover point associated with the last
one of said successive lenses,
aperture means interposed between said source and said work
surface,
electrostatic beam blanking means interposed between said source
and said aperture means and centered with respect to a crossover
point for causing said beam to be directed through an aperture in
said aperture means and at said work surface when no blanking
potential is applied to said blanking means and to be deflected to
be blocked by said aperture means when a blanking potential is
applied to said blanking means,
said deflecting means comprising deflection coils positioned
between one of said successive lenses and an adjacent portion of
the path traversed by said electron beam,
a cylindrical ferrite shield interposed between said coils and said
one lens,
and a cylindrical screening tube interposed between said deflection
coils and an adjacent portion of the path traversed by said
electron beam, said tube comprising a dielectric cylinder having
coated on the inner surface thereof a conductive layer whose
thickness is substantially less than the skin depth of the metal at
the desired bandwidth of the deflecting means.
2. A combination as in claim 1 wherein the last one of said
successive lenses includes a circular opening through which the
electron beam is directed at said work surface,
and further including an additional coil positioned adjacent to a
portion of the path traversed by said electron beam for centering
said beam with respect to said opening in said last lens.
Description
BACKGROUND OF THE INVENTION
This invention relates to electron beams and more particularly to
an improved apparatus in which electron beams are selectively
controlled in a reliable high-speed manner.
The high-resolution and excellent depth-of-focus capabilities of an
electron beam make such a beam an attractive tool for inclusion in
an automated lithography system designed to make subminiature
electronic devices. By controlling the beam in a highly accurate
and high-speed manner it is possible, for example, to make masks or
to write directly on an electron resist-coated wafer of silicon to
fabricate extremely small and precise low-cost integrated
circuits.
Apparatus for providing electron beams of the general type required
for electron lithography is known. See, for example, Chapter 3 of
Scanning Electron Microscopy by P. R. Thornton, Chapman and Hall
Ltd., London, 1968, and The Bell System Technical Journal, Vol. 49,
No. 9 (November, 1970), pages 2,077-2,094. The response time and
accuracy of these known arrangements have, however, been found to
be inadequate for inclusion in an electron beam exposure system
designed to make high-precision submicrometer devices in a reliable
high-speed manner.
SUMMARY OF THE INVENTION
Accordingly, an object of the present invention is an improved
electron beam apparatus.
More specifically, an object of this invention is an improved
electron beam apparatus characterized by highly accurate high-speed
deflection and blanking capabilities.
Briefly, these and other objects of the present invention are
realized in a specific illustrative embodiment thereof that
comprises a modification of a standard electron beam apparatus. The
electromagnetic deflection unit of the standard apparatus is
modified in several ways to improve the response time thereof.
These modifications are directed to reducing skin-effect and
eddy-current phenomena arising from operation of the deflection
unit. In addition, the electrostatic beam blanking plates of the
conventional apparatus are repositioned to minimize
writing-spot-position errors during the blanking operation as well
as during stray electron charging and discharging of the blanking
plates. Also writing-spot-position drift caused by stray electron
charging of other surfaces in the apparatus is minimized by
restricting the beam diameter and by centering the beam on the
final aperture of the apparatus.
BRIEF DESCRIPTION OF THE DRAWING
A complete understanding of the present invention and of the above
and other objects thereof may be gained from a consideration of the
following detailed description of a specific illustrative
embodiment thereof presented hereinbelow in connection with the
accompanying drawing in which:
FIG. 1 is a schematic representation of a prior-art electron beam
apparatus,
FIG. 2 shows in more detail the lower portion of the prior-art
apparatus of FIG. 1,
FIG. 3 depicts a modification of FIG. 2 made in accordance with the
principles of the present invention, and
FIG. 4 illustrates other modifications made in accordance with this
invention.
DETAILED DESCRIPTION
A conventional apparatus for controllably moving a small-diameter
electron beam to any designated position on a work surface 10 is
schematically depicted in FIG. 1. The apparatus includes an
electron source 12 (for example a hot filament), a grid 14 and an
accelerating anode 16. Illustratively, the anode 16, which
comprises a cylindrical metal cap with a circular aperture in the
bottom flat end thereof, is maintained at ground potential. In that
case the source 12 is maintained at a relatively high negative
potential (for example 10 kilovolts below ground).
The trajectories of electrons supplied by the source 12 of FIG. 1
are represented in the drawing by dashed lines. In the vicinity of
the aforementioned aperture in the anode 16 these trajectories go
through a so-called crossover or source-image point 18 which,
typically, is 50-100 micrometers in diameter. Thereafter the
electron paths diverge from the point 18, as indicated in FIG. 1.
Some electrons are blocked from further transit through the
apparatus by a first apertured plate 20 that serves to protect
various downstream elements in the apparatus from being
contaminated by electron bombardment.
To provide at the surface 10 of FIG. 1 an electron beam or probe
having a diameter of say about 0.5 micrometers, it is necessary to
demagnify the crossover point 18. Typically this is done by
successively projecting the beam through several demagnifying
lenses. In FIG. 1, three such lenses 22, 24, and 26, each
comprising an annular coil, are shown. Elements 22 and 24
constitute first and second condenser lenses, respectively, and
element 26 comprises an objective lens.
Each of the lenses represented in FIG. 1 causes the electron beam
trajectories passing therethrough to converge at a subsequent
crossover point. Thus point 28 is shown downstream of the lens 22,
crossover point 30 follows the lens 24, and spot 32 on the work
surface 10 is in effect the crossover or image point formed by the
objective lens 26.
The lenses 22, 24 and 26 of FIG. 1 are preceded by apertured plates
23, 32 and 36, respectively. In addition, a final apertured plate
37 is included in the apparatus. As indicated in the drawing, some
electrons are intercepted by each of these additional plates.
Four additional coils 38 through 41 are schematically represented
in FIG. 1. These coils, which are typically displaced 90.degree.
from each other around the path of the electron beam and connected
in series in a push-pull arrangement, serve to electromagnetically
deflect the electron beam to any desired position in a specified
sub-area of the work surface 10. Access to other sub-areas of the
surface 10 may be gained by mechanically moving the surface by
means of a computer-controlled micromanipulator (not shown).
In the standard electron beam apparatus shown in FIG. 1, beam
blanking is achieved by means of a pair of conventional facing
plates 44 and 46 which are typically positioned adjacent to the
beam in a region in which the beam has a considerable cross
section. By applying an appropriate blanking potential to these
plates, the entire beam is electrostatically deflected to impinge
upon a nonapertured portion of the plate 23. In this way the
electron beam is blocked during prescribed intervals of time from
appearing at the surface 10.
The lower part of the prior art apparatus represented in FIG. 1 is
depicted in more detail in FIG. 2. In particular, FIG. 2 shows the
details of the objective lens 26 and of various elements directly
associated therewith.
The objective lens 26 of FIG. 1 is seen in FIG. 2 to include
annular coil 50, iron pole-piece 52 surrounding the coil 50 and an
apertured circular brass plate 54 that serves to maintain a
prescribed gap in the pole-piece 52.
The final or bottommost apertured plate 37 of FIG. 1 is seen in
FIG. 2 to comprise an apertured circular plate 37 situated very
closely to the pole-piece 52.
In addition, FIG. 2 diagrammatically shows the deflection coils 38
through 41 which constitute a double-deflection system employing an
upper and lower pair of coils for deflection in each of two
orthogonal directions. The upper coils 38 and 39 are wound in
series in push-pull to encompass the electron beam path of the
depicted apparatus. In turn, the upper coils are connected in
series with the series-wound push-pull-connected lower coils 40 and
41 around the electron beam path. The coil connections are so
arranged that current flowing through the coils causes the electron
beam to be deflected in an opposite sense of each pair. The ratio
of turns in the upper and lower coils is such that the central ray
of the deflected beam always passes through the center of the
apertured plate 37 which is also the center of the objective lens
26.
The deflection coils 38 through 41 of FIG. 2 are wound outside an
electrically grounded metal screening tube 56 that serves to
prevent electrons from charging the deflection coils and insulating
materials in the vicinity thereof.
The frequency response of the deflection system of the prior-art
electron beam apparatus shown in FIGS. 1 and 2 is limited by a
number of factors. One of these is the resonant frequency of the
deflection coils 38 through 41. This frequency should approximate
the deflection bandwidth of interest which, in the case of the
improved apparatus to be described below, is about 500 kilohertz.
The resonant frequency of a typical prior art deflection system is,
however, only about 100 kilohertz.
The high-frequency response of the aforedescribed deflection system
is also limited by the screening tube 56. The thickness of the
typical prior-art tube approximates or exceeds the so-called skin
depth of most metals at 500 kilohertz. Accordingly the
high-frequency (500 kilohertz) electromagnetic deflection fields
generated by the coils 38 through 41 are not able to effectively
penetrate the tube 56 to deflect the electron beam within a
prescribed range of distances.
The frequency response of the prior-art deflection system is also
deleteriously affected by eddy currents induced by the deflection
fields in the iron pole-piece 52 and in the brass plate 54. The
effect of these eddy currents is to introduce into the process of
establishing a given deflection angle a time constant of about 10
milliseconds (corresponding to the decay time of the eddy
currents). Such a delay may be undesirable or intolerable when the
deflection system is used in a random-access mode for precise
high-speed electron lithography.
In accordance with the principles of the present invention, the
deflection system and associated components shown in FIG. 2 have
been modified. The modified structure is represented in FIG. 3.
Elements 50, 52 and 54 of FIG. 3 may be identical in structure and
function to the correspondingly numbered elements described above
in connection with FIG. 2.
The deflection coils 58 through 61 of FIG. 3 are wound with fewer
turns than the aforedescribed deflection coils. In this way the
resonant frequency of the coils was increased to about 900
kilohertz. In addition, the lower deflection coils 60 and 61 of
FIG. 3 were moved upward in the apparatus relative to their
position in FIG. 2. As a result, the magnitude of the eddy currents
induced in the brass plate 54 also was significantly reduced over
that measured in the FIG. 2 structure.
To alleviate the aforedescribed problem caused by eddy currents
induced in the iron pole-piece 52, a ferrite cylinder 62 is
included in FIG. 3 as a magnetic shield to isolate the deflection
coils 58 through 61 from the pole-piece 52. To minimize astigmatic
effects on the electron beam, the cylinder 62 is positioned as far
as possible from the pole-piece gap 64.
The screening tube included in the modified arrangement of FIG. 3
comprises a dielectric cylinder 66 (for example made of glass)
whose inner surface is coated with a thin metal film 68. This film
comprises, for example, a layer of silver approximately one
micrometer thick which is much less than the skin depth of the
metallic coating at 500 kilohertz. As a result, the depicted
screening tube is virtually transparent to high-frequency magnetic
fields generated by the deflection coils 58 through 61.
Advantageously, the cylinder 66 is slideably positioned inside
another dielectric tube 70 to which the deflection coils are
attached. In this way, should the metal film 68 become contaminated
after a period of use, the screening tube 66 can be easily removed
and replaced with another such unit.
The response time of the modified deflection system shown in FIG. 3
was measured to be less than 1 microsecond as compared to 5
microseconds for the prior-art system represented in FIGS. 1 and
2.
The electrostatic plates 44 and 46 shown in the prior art apparatus
of FIG. 1 are capable of being operated to achieve high-speed
blanking of the electron beam. Unfortunately, however, the plates
typically exhibit an electron charging and discharging effect that
is undesirable. Stray charges that accumulate on these plates may
cause the beam to be deflected at a time when no deflection is
desired. As a result, off-center positioning of the beam takes
place thereby producing a so-called writing-spot-position error on
the surface 10 (FIG. 1). For this reason the beam blanking
arrangement shown in FIG. 1 is not satisfactory for precise
high-speed electron lithography.
In accordance with the principles of the present invention, a
modified electrostatic beam blanking structure is provided, as
shown diagrammatically in FIG. 4. In the modified structure the
effects of blanking plate charging and discharging and reduced to a
tolerable level.
FIG. 4, which shows a portion of an improved electron beam
apparatus made in accordance with this invention, includes a first
apertured plate 80, a first condenser lens 82, a second apertured
plate 84 and a second condenser lens 86. The first lens 82 focuses
electrons (dashed lines) to a first crossover point 88, whereas the
second lens 84 focuses electrons to a second crossover point 90.
Finally, the crossover point 90 is imaged by the objective lens
(shown in FIG. 3) to form the writing spot on an associated writing
plane.
In accordance with the present invention, a pair of opposed beam
blanking plates 92 and 94 is centered or approximately centered on
the crossover point 88 of FIG. 4. The first apertured plate 80
limits the size of the electron beam so that the unblanked beam
passes completely unhindered between the blanking plates 92 and 94
and through the second apertured plate 84 (which comprises the
blanking aperture-stop). (But in one illustrative embodiment the
beam still overfills the final aperture, of the objective lens, not
shown, which remains the limiting aperture of the entire optical
system).
Advantageously, the positional relationship shown in FIG. 4 between
the blanking plates 92 and 94 and the crossover point 88 should
remain fixed or approximately fixed. As a practical matter,
therefore, no adjustment or minimal adjustment of the first
condenser lens 82 should occur once the depicted relationship is
established. (Adjustment of the lens 82 causes the crossover point
88 to move longitudinally.) Adjustments in the apparatus may still,
of course, be made by varying the properties of the downstream
lenses.
Since the electron-optical properties of the first condenser lens
82 of FIG. 4 preferably remain fixed, it is feasible, for example,
to make that lens from a permanent magnet.
If no crossover point is easily accessible in an electron beam
apparatus for installation thereabout of a pair of beam blanking
plates, additional lenses (for example, permanent magnet ones) may
be added to the apparatus. In that way crossover points may be
established for association with such blanking plates.
Assume that a small voltage is applied across the plates 92 and 94
of FIG. 4, the effect of such a voltage is to deflect electrons in
such a way that rays 95 and 96 emerging from the crossover point 88
appear to be rotated about the point 88 through an angle .PHI. to
rays 97 and 98, respectively. If .PHI. is small, all electrons pass
through the plate 84 and are again focused to the crossover point
90 by the lens 86. Significantly, neither the position nor the
current density of the point 90 is changed. If the beam still
completely fills the final aperture (not shown), the position and
current density of the writing spot on the writing surface
similarly remain unaffected by any small voltage appearing across
the blanking plates.
As the voltage applied to the blanking plates 92 and 94 of FIG. 4
is increased, the deflection angle .PHI. increases and the electron
beam is partially intercepted by the plate 84. However, the
remaining electrons passing through the plate 84 are still focused
at the crossover point 90. Only the current density, but not the
position of the writing spot, is thereby changed. If the applied
blanking voltage is further increased, the beam is further
intercepted by the plate 84 and finally is entirely blanked. The
charging effect of the apertured plate 84 is made insignificant by
deflecting the beam in its blanked condition to a region of the
plate 84 that is relatively far removed from the aperture
therethrough.
From the discussion above it is clear that if electron charging and
discharging of the beam blanking plates 92 and 94 of FIG. 4 result
in a small additional deflecting field across the plates, the
effect on the position and current density of the final writing
spot is inconsequential. Another advantage of positioning the
plates 92 and 94 as shown in FIG. 4 is that the voltage applied
across the plates for blanking or unblanking the beam need not be
well regulated. This, of course, simplifies the design of the
associated drive circuitry for the blanking plates.
The illustrative beam blanking unit described above and shown in
FIG. 4 operated with a 10 nanosecond response time and was observed
to exhibit minimal problems arising from electron charging.
A symmetrical electron charging of the various apertured plates
included in a conventional electron beam apparatus is a persistent
problem which manifests itself as position drift of the writing
spot and as beam astigmatism.
In accordance with the principles of the present invention, the
problems stemming from electron charging are minimized.
Illustratively, this is accomplished by initially restricting the
beam diameter by means of a first apertured plate 80 (FIG. 4) so
that the beam will just fill the final aperture in the plate 65
(FIG. 3). In one specific illustrative embodiment, the first
aperture has a diameter of 0.1 millimeters, the final aperture has
a diameter of 0.4 millimeters and the writing spot has a diameter
of 0.5 micrometers. Under these conditions the unblanked beam
passes unintercepted (except during blanking) through all
intermediate apertures. Consequently, one need be concerned only
with the charging effects of the first plate 80 and the final plate
65. Since the beam blanking plates 92 and 94 (FIG. 4) are located
after the first plate, the beam strikes the first plate
continuously as long as the apparatus is energized. The effect of
the first plate on the beam reaches a stabilized condition soon
after the electron source starts emitting, and can be appropriately
compensated. The charging effect of the final plate 65 shown in
FIG. 3 may, however, depend on the duty cycle of the beam on-time.
The beam drift due to this effect can be reduced to a tolerable
level if the beam is aligned to be always centered on the final
aperture during unblanked intervals. As a result of such centering,
any charge accumlation that does occur on the final plate will be
symmetrical in nature and therefore cause minimal defelctions on
the writing surface.
Centering of the beam with respect to the final aperture may be
accomplished, for example, by adding to the apparatus an additional
deflection coil located in any position downstream of the topmost
apertured plate 80 (FIG. 4) and before the final aperture.
Advantageously, a centering coil 99 is added to the apparatus at
the position shown in FIG. 4. Alignment of the beam is effected by
passing an appropriate direct current through the coil 99. In
actual operation, with a properly centered beam achieved by means
of the coil 99, spot position drift in the writing plane was
measured to be less than 0.1 micrometers as the duty cycle of the
beam on-time was varied from 1 percent to 100 percent.
Finally, it is to be understood that the above-described
arrangements are only illustrative of the application of the
principles of the present invention. In accordance with these
principles numerous other structures may be devised by those
skilled in the art without departing from the spirit and scope of
the invention. For example, although emphasis herein has been
placed on locating the beam blanking plates at the first crossover
point 88 (FIG. 4), it is to be understood that these plates may be
centered or approximately centered with respect to any other
crossover point in an aoparatus of the type described herein.
Moreover, in an apparatus in which the beam traversing the
objective lens is well centered, the final aperture plate may be
eliminated. In this way electron charging of the final plate is
alleviated altogether.
* * * * *