U.S. patent number 3,796,976 [Application Number 05/163,367] was granted by the patent office on 1974-03-12 for microwave stripling circuits with selectively bondable micro-sized switches for in-situ tuning and impedance matching.
This patent grant is currently assigned to Westinghouse Electric Corporation. Invention is credited to John R. Davis, Jr., Terrence M. S. Heng, Harvey C. Nathanson.
United States Patent |
3,796,976 |
Heng , et al. |
March 12, 1974 |
MICROWAVE STRIPLING CIRCUITS WITH SELECTIVELY BONDABLE MICRO-SIZED
SWITCHES FOR IN-SITU TUNING AND IMPEDANCE MATCHING
Abstract
A microstrip line is divided into a number of short sections,
each capacitively coupled to its neighbor by a cantilever switch.
The coupling of each switch depends on the separation between
sections and the spacing between the catilever switch and an
adjoining section. The cantilever switches are sufficiently
flexible to allow test contact between adjacent sections and is
permanently bondable where desired. In such a manner sections
having lengths chosen to be predetermined fractions of a desired
wavelength are connected together to shift the phase of energy
propagating therealong to provide tuning and impedance matching of
microstrip circuits.
Inventors: |
Heng; Terrence M. S.
(Pittsburgh, PA), Nathanson; Harvey C. (Pittsburgh, PA),
Davis, Jr.; John R. (Pittsburgh, PA) |
Assignee: |
Westinghouse Electric
Corporation (Pittsburgh, PA)
|
Family
ID: |
22589731 |
Appl.
No.: |
05/163,367 |
Filed: |
July 16, 1971 |
Current U.S.
Class: |
333/161; 333/235;
333/262; 333/35; 333/81A; 333/246 |
Current CPC
Class: |
H01P
5/04 (20130101); H01P 7/084 (20130101); H01P
1/10 (20130101) |
Current International
Class: |
H01P
5/04 (20060101); H01P 7/08 (20060101); H01P
1/10 (20060101); H01p 003/00 (); H01p 003/08 () |
Field of
Search: |
;333/11,73S,81A,84M,7 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
Primary Examiner: Rolinec; Rudolph V.
Assistant Examiner: Chatmon, Jr.; Saxfield
Attorney, Agent or Firm: Schron; D.
Claims
1. A stripline conductor for tuning and impedance matching of
microwave circuitry comprising, in combination; a plurality of line
sections, each of a length chosen to be a selected fraction of a
wavelength; a plurality of cantilever switches each associated with
their respective one of said sections and having a first portion
affixed thereto and a second section extending over but spaced from
an adjacent section but which second section can be selectively
permanently bonded to said adjacent section whereby the phase shift
along said stripline is a function of the number
2. A microwave stripline of substantially one wavelength at the
desired frequency of operation comprising, in combination; a
plurality of sections, each of a length chosen to be a selected
fraction of said wavelength; a plurality of cantilever switches
each associated with a respective one of said sections and
capacitively coupling said one of said sections to an adjacent
section; each said cantilever switch having a first portion affixed
to said one of said sections and a second portion extending over
but spaced from its adjacent section; the capacitive coupling
between sections being related to the separation between adjacent
sections and the space between the overhanging second portion and
said associated adjacent section as well as the extent to which
said second section extends over said associated adjacent section;
said plurality of cantilever switches being sufficiently flexible
to effect a test contact between adjacent portions upon application
of slight pressure thereupon; each of said plurality of cantilever
swithces being selectively, permanently bondable to its associated
adjacent section whereby the capacitative coupling between adjacent
sections is electrically shorted and the energy propagating along
said stripline is shifted in phase in accordance with the number of
sections so connected to accomplish tuning
3. The subject matter of claim 2 including impedance matching means
at each
4. The subject matter of claim 3 wherein said impedance matching
means
5. The subject matter of claim 2 wherein the neighboring sections
are at
6. A microelectronic component comprising, in combination; a
substrate; a first pattern of conductors on a surface of said
substrate; a plurality of cantilever switches each associated with
a respective one of said conductors and having a first portion
affixed thereto and a second portion extending over but spaced from
an adjacent conductor; each of said cantilever switches being
sufficiently flexible to effect a test contact between adjacent
conductors; each of said flexible switches being selectively,
permanently bondable to its associated adjacent conductor to widen
the current path whereby adjacent conductors are selectively
connected in parallel circuit relationship whereby the width of
the
7. A method of making a microwave stripline with selectively
cold-flow bondable micro-sized switches for in-situ tuning on a
substrate comprising the steps of; depositing a first continuous
metal layer on a surface of said substrate; depositing a pattern of
conductive sections of a second metal layer on said first layer to
define switch gaps between said sections; depositing a layer of
spacing material in the gaps between said sections and onto a
portion of each said section; depositing a third metal layer over a
portion of each said section and a part of said spacing material to
an extent that the third metal layer overlaps a part of said second
metal layer; removing the spacers and excess metalizations by
8. The method of claim 7 wherein; said substrate is a member
selected from
9. The method of claim 8 wherein the second and third layers are of
gold.
10. The method of claim 9 wherein said second and third metals are
the members selected from the group consisting of nickel, copper,
silver,
11. A microwave stripline switch arrangement for use at an
operating wavelength, comprising: a first stripline section, at
least a second stripline section spaced from said first section, a
cantilever switch section connected to said first stripline section
and extending over and spaced from said second stripline section
and connectable therewith, said sections being of a combined length
to effect phase shifting of microwave energy of said wavelength
when contact is effected between said cantilever switch section and
said second stripline section.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates generally to microstrip circuits and
more particularly relates to microwave striplines capable of
in-situ tuning.
2. Description of the Prior Art
The lack of an efficient and reliable means for tuning has always
been a major problem in microwave integrated circuit technology.
For passive circuits this problem has been eliminated to some
degree by imposing a high degree of tolerance and fabrication,
usually at an increased cost. The situation becomes even more
serious, however, for active circuits, in both monolithic and
hybrid configurations. In the former case, the effective impedance
of the active device is generally different from theoretical design
and the need for matching is evident. The common practice in hybrid
circuits is to characterize the active device prior to insertion of
the device into the circuit. In this way the range of device
parameters can be accommodated by sequence of circuit designs. This
involves the availability of costly high quality, sophisticated
test equipment and computer facilities, and a full understanding of
device-circuit interaction. In short, the approach is not
economically feasible for small production runs.
At present, a limited number of tuning techniques exist which fall
into two broad categories: (i) active tuning, and (ii) mechanical
tuning. The use of varactor and p-i-n diodes as tunable capacitive
elements, and YIG spheres as tunable inductive elements, fall into
the first category. Mechanical tuning by screw and movable magnetic
slugs have also been used, in addition to the simple technique of
line scraping by laser or other means. With the exception of the
latter, all these techniques involve the introduction of an
external element into the circuit. As such, the electrical and
mechanical stabilities of these elements are of concern in a large
number of applications.
CROSS REFERENCE TO RELATED APPLICATIONS AND PATENTS
U.S. Pat. No. 3,539,705, entitled "Microelectronic Conductor
Configuration and Method of Making the Same" by Harvey C. Nathanson
and John R. Davis, and assigned to the present assignee, discloses
and claims a microelectronic conductor configuration wherein two
conductive layers are spaced apart, the second layer including a
plurality of projecting paths that can be selectively, permanently
bonded to the first layer to effect electrical connection
therewith.
In patent application Ser. No. 40,627 which is a divisional
application of the aforementioned patent the method of forming such
configurations is described and claimed.
In U.S. Pat. No. 3,413,573 issued Nov. 26, 1968, entitled
"Microelectronic Frequency Selective Apparatus with Vibratory
Member and Means Responsive Thereto" by Harvey C. Nathanson and
Robert A. Wickstrom, and assigned to the present assignee, there is
described and claimed structures and methods of making such
structures involving spaced metal members on integrated circuits,
such as for cantilever beams and resonant gate transistors and for
conductive cross-overs.
SUMMARY OF THE INVENTION
Briefly, the present invention allows in-situ tuning and impedance
matching of microstrip circuits by providing a microwave stripline
of a length related to the wavelength of the desired operating
frequency, which stripline is divided into a plurality of sections,
each of a length chosen to be a selected fraction of the
wavelength. A plurality of cantilever switches of material similar
to the sections are positioned to interconnect sections. Each
cantilever switch has a first portion affixed to its associated
section and a second portion extending over but spaced from an
adjacent section. The over extending portion can be selectively
permanently bonded to the adjacent section. The cantilevers are
selected to be sufficiently flexible to allow temporary electrical
contact to be made for tuning and impedance matching. The number of
sections so connected together determines the amount of phase shift
imparted to energy propagating along the stripline.
BRIEF DESCRIPTION OF THE DRAWINGS
For a better understanding of the invention, reference may be had
to the preferred embodiment, exemplary of the invention, shown in
the accompanying drawings, in which:
FIG. 1 is a perspective view of a cantilever switch utilized in the
inventive embodiment;
FIG. 2 is an elevational view of such a cantilever switch;
FIG. 3 is a diagrammatic illustration of an illustrative embodiment
of the present invention;
FIG. 4 is a graphical illustration of the performance of the
illustrative embodiment shown in FIG. 3;
FIGS. 5 through 8 are partial sectional views of a structure at
successive stages in fabrication in accordance with the present
invention;
FIG. 9 is a plan view of microwave circuitry embodying the present
invention; and
FIG. 10 is a plan view of an alternate embodiment of the present
invention.
DETAILED DESCRIPTION OF THE INVENTION
Simple in-situ trimming of a microwave strip is accomplished by
dividing the line into a number of short sections, each
capacitively coupled to its neighbor by a cantilever switch as
shown in FIG. 1. Sections 2 and 4 are spaced apart a certain
distance l.sub.g. A cantilever switch 6 has a first part 8 secured
to section 2 and a second portion 10 extending over but spaced from
the adjacent section 4. The part 10 is based a distance l.sub.d
from the section 4. The coupling of each switch depends on the
dimensions l.sub.d and l.sub.g for a given line and substrate, and
can be approximated by
C.sub.s .apprxeq. C.sub.d + C.sub.g (1)
C.sub.d = .epsilon..sub.o W (l.sub.c - l.sub.g)/l.sub.d (2)
where:
C.sub.d and C.sub.g are capacitances illustrated in FIG. 2
.epsilon..sub.o is permittivity of free space and C.sub.g is
approximately equal to
C.sub.g .apprxeq. W .epsilon..sub.eff K (m)/K(n) (3)
where K(m) is a complete elliptical integral of the first kind of
modulus m. The modulus constants m and n are related to the
geometries of the gap in a microstrip line in the following
way:
m = (b.sup.2 - a.sup.2).sup.1/2 /b and n = a/b (4)
where:
2a = l.sub.g
b = 1.5h/.epsilon..sub.eff
h = thickness on dielectric substrate
.epsilon. .sub.eff = 1 + Q(d - 1)
.epsilon.d = dielectric constant of substrate
q = Wheeler filling factor.
For a 0.020 inch wide microstrip line of a 0.020 inch substrate
having a dielectric constant of 8.875 such as sapphire for example,
the calculated value of C.sub.g is 0.0146 pf, which agrees very
closely with the measured results set forth in Microwave Engineers
Handbook and Buyers Guide, Horizon House Inc. 1967 by H.
Stinehelfer.
For a switch of dimensions: 1.sub.g = 0.004 inch, l.sub.d = 0.0002
inch, a width W of 0.002 inch, a length l.sub.c of 0.007 inch and a
dielectric constant .epsilon. .sub.d = 10, the theoretical
capacitance is of the order of 0.9.times.10.sup.-.sup.14 farads,
corresponding to a reactance of 2.94 kilohms at 6 GHz or a
reflection coefficient of 0.945. The measured value was 0.9. The
lower measured value is due to the fringing fields at the gap which
have been ignored in the calculation, and finite losses of the line
and connector sections. A low capacitance can be obtained by
increasing the switch height L.sub.d, and gap separation l.sub.g,
and decreasing the cantilever length for a given line.
To investigate the loss and reflection properties of a number of
such switches, a simple circuit was constructed as shown in FIG. 3.
The center line section 20 consisted of an 85 ohm (0.002 inch) line
of one wavelength at 6 GHz, which was divided into .lambda./8
sections interconnected by seven switches. Matching at both ends of
the line to 50 ohm miniature connectors was achieved by
quarter-wave (65 ohm) transformers 22. The relative phase-shift
introduced by the closing of each switch is shown in FIG. 4. When
all the switches were closed, the input voltage standing wave ratio
was measured to be 1.4 and the insertion loss was 1.9 db at 6 GHz,
of which at least 1.2 db is attributed to line and connector losses
at this frequency. The average loss is therefore less than 0.1 db
per switch for the dimensions given which are by no means
optimized.
More particularly, referring to FIG. 4 it can be seen that as each
switch is closed the energy propagating along the line is shifted
in phase the desired 45.degree.. Of course, the stripline may be
divided into a plurality of sections of any chosen number to
provide incremental phase shift and impedance matchings as may be
desired.
When the switches are fabricated of gold, bonding is readily
achieved with a wedge bonder at room temperature. The cantilever
switches are sufficiently flexible to allow temporary contact
between sections without permanently bonding by the application of
a slight pressure with the bonder. On removal of this pressure, the
cantilever springs back to its original position without
deterioration of electrical characteristics. Thus, it is possible
to effect a test contact without bonding to determine optimum
matching. Calculations have also been made to determine the
stability of the switches under external stress. Suffice it to say,
for the dimensions stated, an external acceleration of 20,000 G's
would be required to cause contact to be made by a cantilever
switch to an adjacent section.
A further understanding of the invention on the flexibility with
which it may be used will be aided by consideration of the
following description of preferred methods for carrying out the
present invention. FIGS. 5 through 8 show steps in the fabrication
process. In FIG. 5 a first continuous interfacial bonding material
30 is deposited upon a suitable substrate 32 such as sapphire,
alumina, quartz to name a few. The interfacial bonding material 30
may be a metallization layer such as titanium 30a and gold 30b. A
pattern of sections 34 of another metal layer is deposited upon the
layer 30 to define the switch gaps with the rest of the
circuitry.
In FIG. 6 spacing material 36 is then placed in the gaps and onto a
portion of each section 34. This is followed by the plating of
metal cantilevers 3 as shown in FIG. 7. Sections 34 and cantilevers
38 may be of a metal selected from the group consisting of nickel,
copper, silver, cadmium, gold, tin, palladium, aluminum and
nickel-iron alloys.
The spacers and excess metalization are then removed by successive
etching to form the switches as illustrated in FIG. 8. Because the
steps involved are the same for one or a number of switches, batch
fabrication is therefore possible. For a total switch length L, a
lower limit on the separation between adjacent switches would
probably be twice that length. Using the 0.010 inch switches
fabricated above, line length trimming in steps 0.020 inch, or 8.6
for an 85 ohm line at 6 GHz, is possible. The resolution could be
improved further with smaller switches of lengths say one-half of
those previously stated.
The present invention has application in tuning and impedance
matching of microstrip circuits. For example, in FIG. 9, strip
lines 40, 42 and 44 may be lengthened for desired tuning of the
microstrip IMPATT oscillator circuit by closing selected cantilever
switches. More particularly, the solid state IMPATT diode is
mounted in position 46 on a heat sink and d.c. is brought in by the
bias pad 48. Connection to the diode is made by wire bonding from
pad 48. Tuning of the IMPATT diode is achieved by varying lines 42
and 44, and impedance matching of the oscillator to load line 50 is
provided by line 40.
An alternate embodiment of the present invention is as illustrated
in FIG. 10. As shown therein, a center line conductor 52 may be
increased in width by the addition of adjacent lying conductors 54,
56, 58 and 60. By simply permanently bonding the cantilever switch
62 disposed to connect the conductor 52 to the conductor 54 the
effective electrical cross-section of the conductor will be
increased accordingly. The closing of additional switches 64, 66
and 68 will insert additional sections 56, 58 and 60, respectively,
to increase the effective width of the conductor 52 with respect to
current flow therethrough.
While the present invention has been described with a degree of
particularity for the purposes of illustration, it is to be
understood that all modifications, alterations and modifications
within the spirit and scope of the present invention are herein
meant to be included. Other possible applications are in the area
of microwave integrated circuit interconnection and aligned
bridging, in certain circuits where capacitive couplings are
required.
It will, therefore, be apparent that there has been disclosed a
reliable method of tuning microwave integrated circuit line
connection which has a potential up to the expand. The advantages
of this concept are: (1) high open circuit impedance, VSWR greater
than 20, (2) low short-circuit insertion loss, less than 0.1 db,
(3) high trim resolution, approximately 8.degree. or lower at 6GHz,
(4) low line perturbations, (5) high stability under mechanical
stress, and (6) in-situ fabrication with the rest of the microwave
integrated circuitry.
* * * * *