U.S. patent number 3,783,345 [Application Number 05/178,612] was granted by the patent office on 1974-01-01 for heat-dissipating encapsulated semi-conductor assembly.
This patent grant is currently assigned to Graham-White Manufacturing Company, Graham-White Sales Corporation. Invention is credited to Harvey F. Bredlow, Thomas D. Taylor.
United States Patent |
3,783,345 |
Taylor , et al. |
January 1, 1974 |
HEAT-DISSIPATING ENCAPSULATED SEMI-CONDUCTOR ASSEMBLY
Abstract
A diode or other semi-conductor device encapsulated with a
directly connected heat sink in a heat-conductive, electrically
insulating plastic matrix and dissipating heat generated by the
device from the heat sink to a mounting bracket through a thickness
of the matrix only sufficient for electrical insulation.
Inventors: |
Taylor; Thomas D. (Roanoke,
VA), Bredlow; Harvey F. (Salem, VA) |
Assignee: |
Graham-White Manufacturing
Company (Salem, VA)
Graham-White Sales Corporation (Salem, VA)
|
Family
ID: |
22653223 |
Appl.
No.: |
05/178,612 |
Filed: |
September 8, 1971 |
Current U.S.
Class: |
257/786; 174/527;
174/548; 174/549; 257/793; 257/E23.092; 257/796 |
Current CPC
Class: |
H01L
23/4334 (20130101); H01L 2924/0002 (20130101); H01L
2924/0002 (20130101); H01L 2924/00 (20130101) |
Current International
Class: |
H01L
23/34 (20060101); H01L 23/433 (20060101); H05K
7/20 (20060101); H01l 003/00 (); H01l 005/00 () |
Field of
Search: |
;317/234,1,3,3.1,4,4.1
;174/52S |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Heyman; John S.
Assistant Examiner: James; Andrew J.
Attorney, Agent or Firm: Mechlin; Wilmer
Claims
Having described my invention, I claim:
1. An encapsulated semi-conductor assembly, comprising a
semi-conductor device, a heat-conductive, electrically insulating
plastic matrix encapsulating said device, a heat sink encapsulated
in said matrix and connected for heat transfer directly to said
device for receiving heat generated thereby, and means at least in
part external of said matrix and spaced and electrically insulated
thereby from said heat sink for receiving heat therethrough from
said heat sink, said heat sink and receiving means being metal
members of high heat conductivity relative to said matrix.
2. An assembly according to claim 1, wherein the matrix is a high
silica epoxy.
3. An assembly according to claim 2, wherein the heat-receiving
means is a mounting bracket securable directly to a metal mounting
panel for transferring received heat thereto.
4. An assembly according to claim 3, wherein the heat sink includes
a pair of inner metal plates thermally connected to the device and
spaced therebeyond, and said receiving means includes a pair of
outer plates straddling and spaced and electrically insulated by
the matrix from said inner plates.
5. An assembly according to claim 4, wherein the outer plates are
encapsulated in the matrix.
6. An assembly according to claim 5, including spaced terminals
partly embedded in and projecting from the matrix, and wherein the
device includes a diode and a thyrector connected in parallel
between said terminals, and the inner heat sink plates are heat and
electrically conductive and at least one thereof connects a side of
the thyrector to one of said terminals.
Description
BACKGROUND OF THE INVENTION
While semi-conductor devices have previously been protected by
encapsulating them in high silica epoxy or other heat-conductive,
electrically insulating plastic matrices, as in Kozacka U. S. Pat.
No. 3,179,853 and Winter U. S. Pat. No. 3,327,180, it heretofore
has been the practice to depend for heat dissipation on
transferring generated heat from the device through the matrix to
an external heat conductor. However, although high relative to most
other plastics, the heat conductivity of high silica epoxy is low
relative to metal conductors, with consequent inefficient heat
transfer and potential overheating. It is with a solution for this
problem that the present invention is primarily concerned.
SUMMARY OF THE INVENTION
The primary object of the present invention is to provide an
improved semi-conductor assembly having a semi-conductor device
encapsulated in a heat conductive, electrically insulating plastic
matrix, whereby by encapsulating in the matrix a heat sink
thermally connected directly to the device and transferring heat
generated by the device from the heat sink to a heat conductor at
least partly external of the matrix and spaced and electrically
insulated by the matrix from the heat sink external of the matrix,
the heat generated by the device is effectively dissipated.
Another object of the invention is to provide an improved
semi-conductor assembly of the character described in the preceding
object, wherein the heat conductor is a mounting bracket having a
part thereof confronting the heat sink for receiving heat therefrom
and the confronting part is embedded in the matrix for securely
attaching the mounting bracket thereto.
An additional object of the invention is to provide an improved
encapsulated semi-conductor device and heat sink assembly wherein
the device is a diode-thyrector complex protecting against both
wrong polarity input and high transient voltage spikes.
Other objects and advantages of the invention will appear
hereinafter in the detailed description, be particularly pointed
out in the appended claims and be illustrated in the accompanying
drawings, in which:
FIGURE DESCRIPTION
FIG. 1 is a side elevational view of a preferred embodiment of the
improved semi-conductor assembly of the present invention;
FIG. 2 is a plan view of the assembly of FIG. 1;
FIG. 3 is an end elevational view of the assembly of FIG. 1;
FIG. 4 is a vertical sectional view taken along lines 4--4 of FIG.
3;
FIG. 5 is a vertical sectional view taken along lines 5--5 of FIG.
1;
FIG. 6 is a horizontal sectional view taken along lines 6--6 of
FIG. 1, and
FIG. 7 is a schematic wiring diagram of the preferred
diode-thyrector complex of the improved assembly of the preceding
figures.
DETAILED DESCRIPTION
Referring now in detail to the drawings in which like reference
characters designate like parts, the improved semi-conductor
assembly of the present invention is adapted for installations in
which it is advantageous to encapsulate a semi-conductor device in
a protective plastic matrix without posing an overheating problem,
and in the illustrated embodiment is particularly designed for both
eliminating overheating and protecting against high transient
voltage spikes.
Basically, the improved assembly is comprised of a semi-conductor
device 1 encapsulated or embedded in a high silica epoxy or other
suitable heat-conductive, electrically insulating plastic matrix or
capsule 2, a heat sink 3 directly connected to the semi-conductor
device 1 and encapsulated therewith in the matrix, and a mounting
bracket or other heat-conductive member 4 secured to the matrix and
having a part 5 adjacent and electrically insulated from the heat
sink for receiving heat from the heat sink through an intervening
thickness of the matrix.
The improved assembly has a pair or plurality of terminals 6
threaded or otherwise suitably fitted for connection in the
electrical circuit (not shown) to which it is to be applied and,
conveniently, both electrically insulated and fixed or secured in
place by being partly embedded in spaced relation in the matrix 2.
Particularly designed for use in a direct current circuit for
protection against both accidental reversal of polarity and
transient high voltage spikes, the illustrated assembly has as its
semi-conductor device 1 a diode 7 and a thyrector 8 connected in
parallel across the terminals 6, as shown schematically in FIG. 7.
Of these components the diode 7, within an applied voltage range up
to its peak input voltage, will pass current of positive polarity
in only one direction and necessarily must be conductive for
current to flow through the associated electrical circuit. The
diode therefore will be operative whenever the circuit is closed
and operating. As opposed, the thyrector 8 should have a threshold
voltage above the operating voltage to prevent breakdown of the
diode by damping transient high voltage spikes of higher voltage
than the diode's peak input voltage and in performing this function
the thyrector is conductive only intermittently and momentarily.
Consequently, the diode is the main and for all practical purposes
the only source of the heat generated by the illustrated device 1
while the circuit is closed or operating and it is this heat that
must be dissipated if the device is to remain operative.
While, with its high silica content, the preferred epoxy matrix 2
is a far better heat conductor than plastics in general, its heat
conductivity is still too low to dissipate the heat generated by
the diode 7 of the exemplary assembly 1 unless the matrix is of
impractically large bulk. The present solution to the problem is to
transmit the heat generated by the semi-conductor device 1 directly
to the heat sink 3 and therefrom, through a minimum thickness of
the matrix 2, to a mounting bracket 4 or other member at least
partly outside or external of the matrix. To be effective, both the
heat sink 3 and the partly or wholly exposed or external member 4
must be of high heat conductivity or have a high heat transfer
coefficient relative to the matrix 2 and present or expose to each
other an area sufficient for transfer therebetween, by radiation
and conduction through the intervening thickness of the matrix, of
the heat required to be dissipated.
The illustrated embodiment fulfills the above requirements by using
as its heat sink 3 a pair of laterally spaced, substantially flat
and parallel metal plates 9 clipped or otherwise connected for heat
transfer directly to the diode. Connected at the top to and
straddling the diode, the plates 9 depend or extend downwardly
thereform within the matrix 2 and part 5 of the member 4,
electrically insulated and receiving heat from the plates,
preferably is in the form of a pair of flat metal ears or outer
plates 10 straddling and spaced from the plates 9 and integral with
and upstanding or projecting from opposite sides of a base or other
external or exposed portion 11 of the member 4. Electrically
insulated from the inner plates 9 of the heat sink 3 by intervening
thicknesses of the matrix 2 sufficient for the purpose, the ears 10
may be either outside of or embedded or encapsulated in the matrix,
the latter being preferred as a convenient way for securing or
fixing the member 4 to the matrix.
The inner and outer pairs of plates 9 and 10, respectively, may be
made of any metal of suitable heat conductivity, such as aluminum,
copper, brass or steel. Since encapsulated in the matrix 2, the
inner plates 9 directly connected to the diode 7 are under no
physical stress in service and can be made of thin brass or copper.
However, if, as in the illustrated embodiment, the outer plates or
ears 10 are part of a mounting bracket through which the assembly
is mounted in the intended installation, greater physical strength
is required and a suitable metal is cadmium-plated or other
corrosion-resistant steel. Since the heat conductivity of steel is
less than that of copper or brass, this in turn requires the outer
plates to have greater mass than the inner for comparable heat
diffusivity, while, as in the illustrated embodiment, the high
electrical conductivity of the preferred brass inner or heat sink
plates enables either or both to serve as the electrical connection
or lead between a side of the thyrector 8 and the terminal 6 to
which the diode 7 has one side directly connected.
Dependent on the intervening thickness of the matrix 2 for
electrical installation, but for heat transfer mainly on radiation
between their confronting surfaces, assisted by conduction through
the matrix, the heat sink and bracket plates 9 and 10 must confront
or overlap over a sufficient area to transfer the excess generated
heat otherwise causing overheating, to the outer plates and
therethrough to the external or exposed base 11 of the mounting
bracket 4. The heat transferred to the base 11 or other exposed
part must be dissipated at the rate at which it is received, but
the large surface exposure required if ambient air is the
recipient, is rendered unnecessary, when, as in the usual
installation of the preferred assembly, the base is bolted or
secured directly to a metal panel (not shown) which conducts away
the received heat.
An exemplary assembly according to the present invention has as its
diode 7 and IR 80 - 0144 and thyrector 8 a G.E. 6RS20SJ4B4AF. The
particular diode can generate as much as 10 watts of heat for a
short time and continuously generate about 4 watts. Molded with the
terminals 6, the diode 7 and thyrector 8 in the preferred high
silica epoxy matrix, the inner brass heat sink plates 9 and outer
cadmium-plated bracket ears 10 have thicknesses of about 0.025 inch
and 0.062 inch, respectively, and a total confronting surface area
between the inner and outer plates of about 0.635 sq. in. Of these
dimensions and with the base plate 11 bolted or otherwise secured
directly to a suitable metal mounting panel, the plates 9 and 10
will effectively dissipate the heat generated in operation by the
exemplary diode.
From the above detailed description it will be apparent there has
been provided an improved encapsulated semi-conductor assembly
capable of effectively dissipating the heat generated in operation
by a semi-conductor device, despite encapsulation of the latter in
a plastic matrix. It should be understood that the described and
disclosed embodiment is merely exemplary of the invention and that
all modifications are intended to be included that do not depart
from the spirit of the invention and the scope of the appended
claims.
* * * * *