U.S. patent number 3,770,497 [Application Number 05/128,060] was granted by the patent office on 1973-11-06 for method of producing a two layer contact piece.
This patent grant is currently assigned to Siemens Aktiengesellschaft. Invention is credited to Heinrich Hassler, Horst Schreiner.
United States Patent |
3,770,497 |
Hassler , et al. |
November 6, 1973 |
METHOD OF PRODUCING A TWO LAYER CONTACT PIECE
Abstract
The invention relates to a method of producing a two layer
contact piece for high vacuum power switches. An auxiliary metal
and a diffusion metal are alloyed by diffusion into a surface of a
metallic original body of high electrical conductivity. The
auxiliary metal forms a molten phase with the diffusion metal and
the metallic original body. The volume of auxiliary metal provides
a defined diffusion depth in the original body, at predetermined
diffusion conditions.
Inventors: |
Hassler; Heinrich (Wendelstein,
DT), Schreiner; Horst (Nurnberg, DT) |
Assignee: |
Siemens Aktiengesellschaft
(Berlin and Munich, DT)
|
Family
ID: |
5766393 |
Appl.
No.: |
05/128,060 |
Filed: |
March 25, 1971 |
Foreign Application Priority Data
|
|
|
|
|
Mar 26, 1970 [DT] |
|
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P 20 14 638.7 |
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Current U.S.
Class: |
427/191; 200/266;
420/497; 148/512; 419/5; 420/590; 218/132; 218/130 |
Current CPC
Class: |
H01H
1/0203 (20130101) |
Current International
Class: |
H01H
1/02 (20060101); H01h 033/66 () |
Field of
Search: |
;117/212,227,22
;29/622,63C ;200/166C,166CM ;148/178 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Kendall; Ralph S.
Claims
I claim:
1. A process for preparing a two layer contact piece for high
vacuum power switches which comprises alloying a diffusion metal
and an auxiliary metal into a surface of a metallic original body
of high electrical conductivity, thereby forming a molten phase
with the diffusion metal and the metallic original body, said
auxiliary metal being a metal which forms a liquid phase with the
metallic original body and with the diffusion metal at a
temperature at least 50.degree. C below the melting point of the
metallic original body.
2. The process of claim 1, wherein the diffusion metal and the
auxiliary metal are together brought into contact with the surface
of the metallic original body and then diffused into the original
body, the amount of the auxiliary metal providing a defined
diffusion depth in the original body at the diffusion
conditions.
3. The process of claim 2, wherein a body constituting the
diffusion metal and the auxiliary metal are brought into an annular
recess in the surface of the original body.
4. The process of claim 3, wherein a metal selected from copper,
nickel, iron, cobalt and beryllium, is used as the original
body.
5. The process of claim 3, wherein a metal selected from bismuth,
lead, tellurim and antimony, is used as the diffusion metal.
6. The process of claim 3, wherein a metal selected from copper,
nickel, iron, cobalt and beryllium is used as the original body, a
metal selected from bismuth, lead, tellurim and antimony is used as
the diffusion metal, a metal which forms a liquid phase with the
metallic original body and with the diffusion metal at a
temperature at least 50.degree. C below the melting point of the
original metal, is used as the auxiliary metal.
Description
The present invention relates to a method of producing a two layer
contact piece for high vacuum power switches.
Contact materials for high power switches are required to have
extremely low amounts of gas, small chopping effects, small welding
power and low contact resistance. Also needed is a low burn-off.
The chopping effect causes the arc to break or be interrupted
during the switching of low currents, whereby voltage peaks occur
as a result of the inductivity effect and may result in
breakthroughs. To minimize the chopping effect, a small amount of a
metal with high vapor pressure is added to the contact material,
which reduces the constriction of the arc caused by current forces.
Bonded materials with a high melting metal skeleton structure, such
as tungsten, molybdenum or rhenium are usable up to a limit, as
contact materials in vacuum power switches. Due to the high atom
weight of these materials, the electrical voltage stability of the
switch, based on the diffusion of metal vapor out of the contact
gap, is not restored quickly enought. The switching currents are
limited to about 4 kA. Metals having an atomic weight < 65, as
for example, copper,iron, cobalt, nickel and beryllium, may be
considered for use as original metals that yield an action
supplement of high vapor pressure, as an antichopping component.
Thus, it is known to use copper contact pieces, which are provided
with recesses whereinto the copper bismuth rings are inserted.
Alloys with the original metal copper and the antichopping
supplement, such as, e.g., bismuth, makes it difficult, at the
required low gas content, to distribute the bismuth uniformly and
in a defined manner, in the contact layer of the copper. Moreover,
when a homogenous copper bismuth alloy is used, it is hard to
produce a firm connection, which is resistant to temperature
changes, between the contact piece and the carrier metal, since the
active component, e.g., bismuth, leads to a considerable
brittleness of the contact material and the solder layer and to a
reduction of the stability.
The object of the present invention is to overcome heretofore
encountered difficulties during the production of two layer contact
pieces.
To this end and in accordance with the invention, an auxiliary
metal and a diffusion metal is alloyed, through diffusion, into a
surface of a metallic original body of high electrical
conductivity, whereby the auxiliary metal forms a molten phase with
the diffusion metal and the metallic original body.
In carrying out the method, the auxiliary metal and the diffusion
metal are brought into contact with a surface of the metallic body
as an alloy or a power mixture of specified composition, as a loose
powder or a pulverulent pressed mass. The alloy, the powder mixture
or the pulverulent pressed mass are subsequently alloyed into the
metallic original body by means of diffusion, so that the amount of
the auxiliary metal provides a defined diffusion depth in the
original body at predetermined diffusion conditions.
It is possible to use copper, nickel, iron, cobalt or beryllium, as
the original body, and bismuth, lead, tellurium or antimony, for
example, as the diffusion metal.
It is preferred to use such metals, as auxiliary metals, which form
a liquid phase with said metallic original body and with the
diffusion metal, at least 50.degree.C below the melting temperature
of the metallic original body.
The use of an auxiliary metal offers the advantage that a diffusion
temperature may be used which is considerably below the melting
temperature of the metallic original body. When the original body
consists of copper, the auxiliary metal of silver and the diffusion
metal of bismuth, a diffusion temperature between 800.degree. and
1,000.degree. C is suitable in order to obtain, within a period of
10 to 30 minutes, a state of equilibrium and to produce thereby the
desired diffusion layer. When pure bismuth is used as a diffusion
metal, and copper is employed as the original body, a desired
equilibrium Bi content of 2 % would result at a diffusion
temperature of 1,075.degree. C, without the use of an auxiliary
metal. Since this temperature is only 8.degree. C below the melting
temperature of the copper, it is virtually impossible to comply
with the required temperature in a furnace for the purpose of
manufacture.
The invention will be shown in greater detail with reference to the
Drawing, in which there is shown in FIGS. 1 to 5, the steps of
carrying out the invention.
A wafer-shaped contact specimen (original body) 11 of 60 mm
diameter and a height of 20 mm, is cast from a highly degassed
copper, is illustrated in FIG. 1.
In FIG. 2, an annular recess 12 with dimensions .phi..sub.a = 40
mm, .phi..sub.i = 30 mm, depth = 5 mm, and corresponds
approximately to the future contact area, is provided in a surface
of the original body. A pressed mass of powder 13 (FIG. 3)
comprising a mixture of 10 g silver, 15 g copper and 1 g bismuth,
and adjusted to a diffusion temperature of 1,000.degree. C is
inserted into the recess 12. This produces a liquid phase, forming
an equilibrium of 10 g silver and approximately 40 g copper, which
contains a uniform distribution of the bismuth. The liquid phase
which corresponds to the diffusion range 14, is shown in FIG. 4.
After the diffusion is completed, the contact piece which consists
of the carrier layer 11 and the indiffused contact area 15, is
produced as shown in FIG. 5. The diffusion zone boundary of the
contact area 15 is illustrated by the dashed lines. The contact
piece, thus obtained, may be easily connected by eutectic means
with the carrier metal copper, through customary solders such as
for example, AgCu.
When iron, nickel, cobalt or beryllium are used for the original
body, appropriate auxiliary metals are to be selected which form at
diffusion temperature a liquid phase with the metal of the original
body that melts at lower temperatures than the metal of the
original body. The liquid phase produces, in the form of mixed
crystals, an eutectic or peritectic, depending on the solubility
rate, and the amount of auxiliary metal and diffusion metal is
determined for a desired depth of penetration.
When using Cu as the original metal, the auxiliary metal may be
selected from Ag, Cd, Ge, In, Mg, Si, Sn, Zn, Ce and the diffusion
metal may be selected from Te, Bi, Pb, and Sb.
When using Fe as the original metal the auxiliary metal may be
selected from Cu, Be, Ce, Fe+(1-4.5) wt-% C, Ge, Nb, Sb, Si, Ti and
the diffusion metal may be selected from Te, Bi and Pb.
When using Co as the original metal the auxiliary metal may be
selected from B, Co+I1-3) wt-% C, Ge, Nb, Sb, Si, Sn, Ti and the
diffusion metal may be selected from Te, Bi and Pb.
When using Ni as the original metal, the auxiliary metal may be
selected from B, Be, Ni+(1-2.5) wt-% C, Ce, Mg, Nb, Sb, Si, Sn and
the diffusion metal may be selected from Te, Bi or Pb.
When using Be as the original metal, the auxiliary metal may be
selected from Ag, Cu, Si and the diffusion metal may be selected
from Te, Bi or Pb.
* * * * *