U.S. patent number 3,753,022 [Application Number 05/137,299] was granted by the patent office on 1973-08-14 for miniature, directed, electron-beam source.
This patent grant is currently assigned to The United States of America as represented by the Secretary of the Army. Invention is credited to Donald L. Fraser, Jr..
United States Patent |
3,753,022 |
Fraser, Jr. |
August 14, 1973 |
MINIATURE, DIRECTED, ELECTRON-BEAM SOURCE
Abstract
A miniature, directed, electron-beam source, consisting of a
conventional field emission source with an associated first anode
plate, and several deposited layers of alumina and molybdenum for
focusing and deflecting the electron beam, the deposited layers
having a column etched through them to the field emission
source.
Inventors: |
Fraser, Jr.; Donald L. (Laurel,
MD) |
Assignee: |
The United States of America as
represented by the Secretary of the Army (Washington,
DC)
|
Family
ID: |
22476728 |
Appl.
No.: |
05/137,299 |
Filed: |
April 26, 1971 |
Current U.S.
Class: |
313/439; 313/336;
313/444; 313/311; 313/355 |
Current CPC
Class: |
H01J
3/022 (20130101); H01J 1/3042 (20130101); H01J
3/027 (20130101) |
Current International
Class: |
H01J
3/02 (20060101); H01J 3/00 (20060101); H01J
1/30 (20060101); H01J 1/304 (20060101); H01j
029/74 (); H01j 001/90 () |
Field of
Search: |
;313/80,75,82NC,78 |
References Cited
[Referenced By]
U.S. Patent Documents
Other References
evans et al., IBM Technical Disclosure Bulletin; Vol. 9, No. 2;
July, 1966; age 155 cited. .
Spindt; Journal of Applied Physics; Vol. 39, No. 7; June, 1968;
pages 3,504 and 3,505..
|
Primary Examiner: Segal; Robert
Claims
What is claimed is:
1. A miniature, directed electron beam source comprising:
an electrically conductive base;
a point source of electrons deposited on said base;
means for focusing said electrons, said focusing means including at
least a first electrically insulative layer and at least a first
anode, said at least first insulative layer being deposited on said
base and said at least first anode being deposited on said
insulative layer said focusing means being apertured to expose said
electron source; and
means for deflecting said electrons, said deflecting means
including an apertured electrically insulative layer and at least
four deflecting plates, said insulative layer being deposited on
said focusing means and to a depth of at least 20 microns, and said
deflecting plates being deposited on said insulative layer abutting
said aperture within said deflecting means each of said deflecting
plates having a dimension along said aperture substantially equal
to said depth.
2. An electron beam source in accordance with claim 1, wherein said
focusing means includes first and second anodes, each anode having
an aperture therein, said anodes being separated by a material
which is inert with respect to said anodes.
3. An electron beam source in accordance with claim 2, wherein said
source of electrons is a field emission source of electrons.
4. An electron beam source in accordance with claim 3, wherein said
field emission source comprises:
a sapphire substrate;
a cathode layer of molybdenum deposited on said substrate;
a cathode cone of molybdenum deposited on said cathode layer;
and
a first layer of alumina, deposited on said cathode layer, and
having an aperture therein, and said first anode layer of
molybdenum deposited on said first layer of alumina, said first
anode layer having an aperture therein.
5. An electron beam source in accordance with claim 4, wherein said
focusing means includes said first anode layer of molybdenum, said
first anode deposited on said first layer of alumina, and having an
aperture therein;
a second layer of alumina, deposited on said first anode and having
an aperture therein; and
a second layer of molybdenum, deposited on said second layer of
alumina and having an aperture therein.
6. An electron beam source in accordance with claim 5, wherein said
deflecting means includes a third layer of alumina deposited on
said second anode layer, said third layer of alumina having an
aperture therein; and
four deflection plates, said deflection plates being deposited
within said aperture of said third layer of alumina, said
deflection plates being deposited at substantially equal angles to
each other, and impinging only on said third layer of alumina.
7. An electron beam source in accordance with claim 6, wherein said
third layer of alumina is at least 20 microns at its thickest
point, and wherein said aperture in said first and second anode and
said first, second and third alumina layers is not more than 4
microns in cross section.
Description
BACKGROUND OF THE INVENTION
THis invention relates to the electron beam art, and more
particularly, to miniature electron beam sources which utilize
deposited structure to focus and deflect the electron beam. In the
prior art, electron beam sources have structure for focusing and
deflecting the beam so that the beam may be controlled in intensity
and direction according to the wishes of the operator. This
structure is always a component type, that is, individual, distinct
components are used to focus and deflect the eimtted electrons into
a directed beam. Typical of the prior art are the U.S. Pats. to
Newbury, No. 3,491,236, and to Kimura, No. 3,474,245, which
disclose electron beam sources and structures to focus and deflect
the emitted electrons into a useable electron beam. The structure
which performs these functions consists of separate, physically
distinct components.
Typical of a focusing structure is a layer or a grid network of
metal, with an aperture or opening in that piece of metal. This
opening acts like a lens for the electrons eminating from the
source and is utilized to establish a directed beam. The emitted
electrons which travel in the desired direction of the beam pass
through the opening; the remaining electrons are caught by the
metal sheet. Often there will be an electrical potential associated
with the focusing structure to further focus and direct the beam
through the opening and down the optical system. The deflection of
the electron beam after it has passed through the focusing
structure is usually and typically accomplished by four plate-like
structures which surround the beam. By applying differing
potentials to these plates, the beam may be deflected to varying
degrees in any direction.
This type of structure for focusing and deflecting the emitted
electrons into a directed electron beam has been very successful.
However, the principle problem with this type of structure in
focusing and deflecting electrons is the apparent physical limit
(on the order of an inch) to which these components may be
successfully miniaturized. Presently, there is a need for extremely
small electron beam sources which have the capability of focusing
and deflecting so that the beam may be controlled by an operator.
Particularly in the area of computers, and in
electron-beam-accessed computer memories, there is a need for large
arrays of miniaturized electron beam sources to accurately access
state-of-the-art miniaturized storage devices. At the present time,
a larger single beam source is utilized with a variety of lenses to
access the memories. Miniaturization of the electron beam source,
however, is required for full utilization of presently miniaturized
memory storage. Up to the present, the miniaturization of an
electron beam source and its associated focusing and deflecting
structure has been limited by the component type of structure. The
present invention makes possible the fabrication of electron beam
sources having focusing and deflecting capabilities of extremely
small size, on the order of 25 microns in height, and 5 microns in
diameter.
SUMMARY OF THE INVENTION
One object of this invention is to provide a miniaturized electron
beam source with focusing and deflecting capabilities.
Another object of this invention is to provide an electron beam
source having focusing and deflecting capabilities wherein a field
emission source is utilized.
A further object of the present invention is to provide a
miniaturized electron beam source having deflecting and focusing
capabilities wherein the structure to accomplish the focusing and
deflecting of the electrons is fabricated by material deposition
techniques.
With these and other objects in view, this invention relates to an
electron beam source having structure capable of focusing and
deflecting the emitted electrons. More specifically, the invention
relates to a miniaturized electron beam source having an electron
source, with structure necessary to focus and deflect the emitted
electrons deposited in proximity to the electron beam source. In
the preferred embodiment, the electron source is a field emission
electron source and its associated first anode plate. Alternating
layers of alumina and molybdenum are then deposited to give the
focusing capability to the structure. Another layer of alumina is
deposited and a column is subsequently etched through the alumina
close to the field emission source. Alumina is further deposited to
form the necessary structure for deflecting the electron beam. The
column is then further etched to reveal the field emission
source.
DESCRIPTION OF DRAWINGS
FIG. 1 is a cross-sectional view of the miniature electron beam
source;
FIG. 2 is a figurative, typical electrical connection of the
miniature electron beam source, and
FIGS. 3 through 7 illustrates successive steps in making the
miniature electron beam source.
PREFERRED EMBODIMENT
The preferred embodiment describes the novel miniature electron
beam source which consists of a field emission source, an
electrostatic lens, and four deflection plates. Referring to FIG.
1, the field emission source is a cone of molybdenum 21, less than
3 microns in diameter at its base and less than 1 micron high.
First and second anodes 14 and 17 are constructed of 1/4-micron
thick molybdenum layers, separated from a base 12 and each other by
1-micron-thick layers 13 and 16 of alumina. These anodes with the
proper choice of voltages focus the electrons which have been
emitted from the field emission source. This beam is then deflected
by four molybdenum plates, each plate being approximately 20
microns long. The height of this optical system is thus less than
25 microns, while its diameter is less than 5 microns.
FIG. 2 shows a figurative representation of the miniature electron
beam source and shows electrical connections that are made within
the electron beam source to achieve focusing and deflecting of the
emitted electrons.
A detailed description of the preferred embodiment, showing the
novel features of the invention, is best achieved by describing a
method of manufacturing or making the electron beam source broadly
described structurally above. Referring to FIG. 3, the process for
making the invention begins with an optically smooth sapphire
substrate 11. Referring again to FIG. 3, the first layer 12 of
molybdenum is evaporated, using common evaporation techniques, on
the sapphire substrate. This layer 12 of molybdenum is evaporated
to a thickness of 1/4 micron. On top of this layer of molybdenum, a
1-micron-thick layer 13 of alumina is next evaporated. Another
layer 14 of molybdenum is evaporated on the layer 13 of alumina,
this second layer of molybdenum also being 1/4 micron in thickness.
On top of this second layer 14 of molybdenum, a second layer 16 of
alumina is evaporated, this layer also being 1 micron thick. On top
of this second layer 16 of alumina, a third 1/4-micron-thick layer
17 of molybdenum is evaporated. Thus, on a typical, sapphire
substrate of 5 microns diameter, alternate layers of molybdenum and
alumina are evaporated, resulting in three layers of molybdenum and
two layers of alumina, the molybdenum being deposited in layers of
1/4-micron thickness and the alumina being deposited in layers of
one micron thickness. Additional layers of alumina and molybdenum
may be evaporated to give further focusing properties.
Referring to FIG. 4, an opening is made in the structure down to
the base layer 12 of molybdenum. Typically, the structure shown in
FIG. 3 is coated with a standard photoresist, on which, after
appropriate masking, exposure and development would leave an
unprotected area about four microns in diameter. The molybdenum
layers 17 and 14 and the alumina layers 16 and 13 are etched
through, using standard etching solutions such as orthophosphoric
acid or a solution of H.sub.2 SO.sub.4 +HNO.sub.3 and well-known
techniques, to the first layer 12 of molybdenum. The resulting
structure shown in FIG. 4 is then baked at a high temperature
(usually 1,000.degree. Centigrade) to make the alumina layers 16
and 13 inert, and thus immune from further etching.
Referring now to FIG. 5, alumina is deposited at an angle of less
than 15.degree. above the horizontal line 18 while the substrate
structure is rotated. The deposition is continued until the opening
in the deposited alumina is equal to the desired diameter of the
base of the field emission source to be subsequently deposited.
Thus, a layer 19 of alumina is laid down on top of the layer 17 of
molybdenum until the opening is equal to the desired diameter of
the field emission source. Molybdenum is then deposited in a
direction normal to the surface of the structure as shown in FIG. 5
simultaneous with the continuing angle deposition of alumina. This
simultaneous deposition of molybdenum and alumina continues until
the opening in the alumina layer is closed by the deposition of the
alumina. As can be seen from FIG. 5, the shape of the field
emission sourc 21 (the deposited molybdenum) can be controlled by
the deposition rates of the alumina and molybdenum. This
simultaneous deposition technique for making a field emission
source is not new and is fully explained by Mr. C. A. Spindt in an
article in the Journal of Applied Physics, Vol. 39, No. 7, Pages
3,504 and 3,505, entitled "Thin Film Field Emission Cathode," dated
June, 1968.
The deposition of the field emission source, which will provide the
electrons, has been described, as has the structure necessary to
focus the emitted electrons. The only remaining structure to be
described is the deflection plates which deflect the emitted
electrons.
Referring to FIG. 6, alumina is again deposited on top of the
structure to a height of 20 microns. The total height of the
deposited alumina above the layer 17 of molybdenum should be at
least 20 microns to achieve a sufficient degree of deflection. This
alumina layer, designated by the numeral 25, is then masked, and an
opening through the alumina etched to within 1 micron of the
opening 22, as shown in FIG. 6. This triangle-shaped opening, which
occurs as a result of the deposition technique used to form the
field emission source, is generally about one micron above the last
layer of molybdenum 17.
Referring now to FIG. 7, molybdenum is deposited from a single
stationary source in order to form the deflection plates of the
electron beam source. To insure proper adhesion between the alumina
and the molybdenum, the surface of the alumina, prior to
deposition, must be very clean. The angle at which the molybdenum
is deposited onto the alumina depends upon the configuration of the
column which has been etched previously in the alumina and the
desired column diameter 23 which will be present at the conclusion
of the deposition. Molybdenum is deposited until the desired
surface configuration of the deposited plate 24 relative to the
alumina is achieved, as shown in FIG. 7. The structure is then
rotated 90.degree. and the above process is repeated. The
deposition of alumina following the above explained process
continues until four deflection plates, covering approximately 80
percent of the column surface area, are deposited on the alumina
within the column. Because of the low deflection voltages involved
(on the order of 50 volts), slight physical distortions along the
length of the deposited plates will have little effect on the beam,
and can thus be tolerated.
Acid is then used to etch through the remaining alumina shown in
FIG. 6 to open the column to reveal the field emission source.
Electrons emitted from the field emission source thus are focused
by the two molybdenum focusing anodes, pass into the column within
the deposited alumina, are deflected by the deflecting plates, and
then pass out the upper end of the structure in a concentrated
beam. Thus, by using standard, well-known deposition techniques, an
electron beam source can be fabricated, to include a field emission
source, focusing anodes, and deflection plates, resulting in a
miniature electron beam source that is capable of good resolution
and sensitivity, while being relatively inexpensive. Furthermore,
the nature of the sapphire substrate allows these miniature beam
sources to be made in large arrays. The crystal nature of the
sapphire substrate is such that the substrate has either a random
or regular array of open micron-size cavities. Each cavity might
then contain a single field emission source, made in the manner
explained above. By making use of the majority of the cavities in
the substrate, a large array of electron beam sources may be packed
into a relatively small area.
It is to be understood that the above described embodiment of the
invention is merely illustrative of the principles thereof and that
numerous modifications and embodiments of the invention may be
derived within the spirit and scope thereof, and that the applicant
is not limited to merely his preferred embodiment.
* * * * *