U.S. patent number 3,743,850 [Application Number 05/261,915] was granted by the patent office on 1973-07-03 for integrated current supply circuit.
This patent grant is currently assigned to Motorola, Inc.. Invention is credited to William F. Davis.
United States Patent |
3,743,850 |
Davis |
July 3, 1973 |
INTEGRATED CURRENT SUPPLY CIRCUIT
Abstract
DC biasing currents for a monolithic integrated circuit are
obtained from a single regulated current reference source supplying
current through first and second series connected diodes to
establish points of reference potential. Some of the current source
transistors which are referenced to this regulated current source
have the base-emitter junctions thereof connected across the first
diode, and the emitter current of these current source transistors
is collected and added to the current from the regulated current
source and supplied through the second diode. This second diode,
with a larger regulated current flowing therethrough, is used to
reference additional current source transistors for substantially
larger currents without necessitating the use of high ratio area
scaling of the emitter areas of these current source
transistors.
Inventors: |
Davis; William F. (Tempe,
AZ) |
Assignee: |
Motorola, Inc. (Franklin Park,
IL)
|
Family
ID: |
22995436 |
Appl.
No.: |
05/261,915 |
Filed: |
June 12, 1972 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
|
|
186269 |
Oct 4, 1971 |
|
|
|
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Current U.S.
Class: |
307/32; 307/53;
323/315; 327/540; 327/535 |
Current CPC
Class: |
G05F
3/18 (20130101); G05F 3/225 (20130101) |
Current International
Class: |
G05F
3/08 (20060101); G05F 3/18 (20060101); G05F
3/22 (20060101); H02j 001/100 (); H02m
003/14 () |
Field of
Search: |
;307/31,32,33,35,37,53,296,297,11,12 ;323/4,9 ;330/38,22 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Goldberg; Gerald
Parent Case Text
This is a continuation, of application Ser. No. 186,269, filed Oct.
4, 1971, now abandoned.
Claims
I claim: 1An integrated current supply circuit including in
combination:
first and second voltage supply terminals;
first and second diode means;
reference current source means connected in series circuit with
said first and second diode means, in the order named, between said
first and second voltage supply terminals, said first and second
diode means poled to conduct current in the forward direction
between said reference current source means and said second voltage
supply terminal;
at least first and second utilization circuits;
at least one first current source transistor means having
collector, base, and emitter electrodes, the collector thereof
connected with said first utilization circuit to provide biasing
current therefor, the base and emitter connected in parallel
circuit with said first diode means; and
second current source transistor means having collector, base and
emitter electrodes, the collector electrode thereof connected with
said second utilization circuit to provide biasing current
therefor, and the base and emitter thereof connected in parallel
circuit with said second diode
means. 2. The combination according to claim 1 wherein said
reference current source means comprises a regulated current
source, substantially
independent of variations in supply voltage and junction
temperature. 3. The combination according to claim 1 wherein said
first utilization circuit comprises a plurality of first
utilization circuits and said first current source transistor means
comprises a plurality of first current source transistors, each
having collector, base, and emitter electrodes, the collectors of
which are each connected with a different one of said first
utilization circuits and the bases and emitters of which all
are
connected in parallel circuit with said first diode means. 4. The
combination according to claim 1 wherein said second utilization
circuit comprises a plurality of second utilization circuits and
said second current source transistor means comprises a plurality
of second current source transistors, each having collector, base,
and emitter electrodes, the collectors of which are each connected
with a different one of said second utilization circuits and the
bases and emitters of which all are
connected in parallel circuit with said second diode means. 5. The
combination according to claim 1 wherein the base-emitter circuit
of said first current source transistor means is connected to be
forward biased by current flowing through said first diode means,
and the base-emitter circuit of said second current source
transistor means is connected to be
forward biased by current flowing through said second diode means.
6. The combination according to claim 5 wherein said first and
second diode means each comprise transistor diode means having a
shorted collector-base junction, with said transistor diode means
and said first and second
current source transistor means being of the same conductivity
type. 7. The combination according to claim 6 wherein said first
and second transistor diode means and said first and second current
source transistor means all are NPN transistors and said second
voltage supply terminal is coupled with a point of reference
potential.
Description
BACKGROUND OF THE INVENTION
In monolithic integrated circuits, several DC biasing currents from
different current sources normally are required. The different
biasing currents on a single monolithic integrated circuit chip can
range in value over a considerable range, for example, from 10
microamps to a milliamp or more. Often all of these biasing
currents are derived from a single regulated current reference,
which is utilized to conserve the area of the chip consumed by the
reference current circuit portions, and which is regulated to be
independent of voltage and temperature variations.
The current provided by the regulated current source normally is
supplied through a reference diode to establish a point of
reference potential, and the base-emitter junctions of the current
source transistors which supply the various biasing currents are
connected directly across this diode. As a result, the biasing
currents exhibit the same stability as the reference current.
Usually, the emitter area of the reference diode is some multiple
(greater or less than one) of the emitter area of the current
source transistors and thus allows the regulated currents to be
approximately ratioed to the regulated reference current.
Optimally, the emitter area of the reference diode is selected to
utilize the smallest possible die area to provide the current
source transistors with both the largest and smallest currents
required by the circuit. Even with such a selection, however, a
high ratio of emitter area scaling often is necessary, with the
area of the largest emitter for a current source transistor being
many times the area of the emitter of the reference diode (as much
as 100 times). Area scaling of this magnitude consumes a large area
of the chip and is undesirable from an economical standpoint.
Another technique has been to use resistors in series with the
emitters of the reference diode and current source transistors. The
ratio of the values of the emitter resistors determines the
relative ratios or magnitudes of the currents supplied by the
various current source transistors. These currents are referenced
to the regulated current through the emitter resistor of the
reference diode. Once again, however, if large current ratios are
required in the circuit, a high ratio of the values of the emitter
resistors also is necessary. This also results in undesirable
consumption of large areas of the integrated circuit chip. In
addition, such resistors result in the unnecessary consumption of
power.
SUMMARY OF THE INVENTION
Accordingly, it is an object of this invention to provide an
improved integrated current supply circuit.
It is another object of this invention to provide an improved
integrated current supply circuit which supplies the same range of
biasing currents but with lower emitter area ratios of the various
current source transistors to the reference diode than heretofore
required.
It is a further object of this invention to combine currents from
some biasing current sources in an integrated circuit with the
current from the common reference current source to provide an
additional higher reference current through a reference diode to
control other biasing current sources.
In accordance with a preferred embodiment of this invention: an
integrated current supply circuit includes a reference current
source connected in series with first and second diodes, in the
order named, between a pair of voltage supply terminals. The diodes
are poled to conduct current in their forward direction from the
current source to one of the supply terminals. First and second
utilization circuits are provided, each of which is supplied with a
biasing current from corresponding first and second current source
transistors, respectively. The base-emitter path of the first
current source transistor is connected across the first one of the
diodes to provide the biasing current for the first utilization
circuit. The base-emitter path of the second current source
transistor is connected across the second diode. This diode has a
higher current flowing through it than that which flows through the
first diode since it receives current from both the first diode and
the first current source transistor. As a result, the second
current source transistor is biased with a higher current than is
the first current source transistor.
BRIEF DESCRIPTION OF THE DRAWING
The sole FIGURE of the drawing is a schematic diagram, partially in
block form, of a preferred embodiment of the invention.
DETAILED DESCRIPTION
Referring now to the drawing, there is shown enclosed within the
dotted lines a typical integrated circuit, which preferably is a
monolithic integrated circuit in which a number of different
utilization circuits performing different circuit operations are
provided with regulated biasing currents from corresponding current
source transistors. These utilization circuits are identified as
circuits A through N' in the drawing and may take any suitable
form, such as amplifying circuits, comparator circuits, and the
like. Since the particular configuration of the circuit elements
and the function of these utilization circuits is unimportant to an
understanding of the operation of the bias current supply circuit,
the details of the utilization circuits are not shown to avoid
unnecessary cluttering of the drawing.
The various utilization circuits A, B, C, D, . . . N', however, may
require operating or biasing currents of different values, with
these biasing currents preferably being voltage and temperature
regulated to stabilize the operation of the utilization circuits A
through N'. Each of the various biasing currents, of course, could
be obtained from an independent voltage and temperature regulated
source; but this would be wasteful of chip area and would
unnecessarily complicate the circuitry on the chip.
A single regulated reference current source circuit 10 is provided
to establish a regulated reference current which is relatively
independent of variations with junction temperature and supply
voltage. The current source 10 may be in the form of a number of
different configurations, the circuit shown merely being
illustrative of a typical suitable regulated current source. The
reference current is supplied by an NPN current source transistor
11, the collector of which is connected through a voltage dropping
resistor 12 to a bonding pad 13 and the emitter of which is
connected through a resistor 14 and a pair of NPN transistor diodes
15 and 16 to a grounded bonding pad 18. A suitable source of B+
operating potential (not shown) is applied to the bonding pad 13,
so that the regulated current flows from the bonding pad 13 through
the collector-emitter path of the transistor 11, the resistor 14
and the NPN transistor diodes 15 and 16 to the grounded bonding pad
18.
A stabilized source of operating potential for the reference
current source transistor 11 is provided by a lateral PNP current
source transistor 20, the emitter of which is connected to the
bonding pad 13 through a resistor 21. The transistor 20 supplies
current to a zener diode 22 coupled between the collector of the
transistor 20 and the bonding pad 18. The base of the transistor 11
is connected at the junction of the cathode of the zener diode 22,
the collector of the PNP current source transistor 20, and the
resistor 26. The potential drop across the zener diode 22
constitutes a constant reference voltage for driving the current
source transistor 11.
The base-emitter junction of the transistor 11 and the diodes 15
and 16 all have negative temperature coefficients which are chosen
to partially offset the positive temperature coefficient of the
zener diode 22. The change in voltage across the resistor 14 due to
changes in temperature is offset by corresponding changes in
resistance of the resistor 14. Thus, the current flowing through
the current source transistor 11 and the diodes 15 and 16 has a
zero temperature coefficient. An NPN transistor 24 is connected
across the emitter-base junction of the transistor 20 to compensate
for beta variations of the lateral PNP transistor 20. The base of
the transistor 24 is connected to the junction of the resistor 12
with the collector of the transistor 11.
To insure that the circuit 10 operates upon the application of the
operating potential to it, resistor 26 of relatively high value is
connected from the bonding pad 13 to the collector of the current
source transistor 20 to provide a small leakage current from the
positive input bonding pad 13 through the zener diode 22 to the
grounded bonding pad 18. Sufficient current initially flows through
this resistor 26 and the zener diode 22 to initiate operation of
the circuit. The temperature and voltage regulated current supplied
by the current source transistor 11 constitutes the master
reference current for the biasing current source transistors used
to supply operating or bias current to the utilization circuits A
through N'.
It is known that by connecting the base-emitter junction of a
biasing current source transistor across the junction of a
transistor diode supplied with current from a regulated current
source, the current flowing through the biasing current source
transistor also is regulated. The magnitude of the biasing current
is determined by the ratio of the area of the emitter of the
biasing current source transistor to the area of the emitter of the
transistor diode. Normally all of the emitters of the biasing
current source transistor are returned to a point of reference
potential or a supply terminal in common with the current flowing
through the current source transistor diode.
In the circuit shown in the drawing, however, four such biasing
current source transistors 30, 31, 32 and 33 in the form of NPN
transistors, are connected with the base-emitter junctions thereof
in parallel across the transistor diode 15. Thus, the current
flowing from the emitters of the current source transistors 30, 31,
32 and 33 does not flow directly to ground but instead is added to
the original reference current and caused to flow through the
transistor diode 16 to the grounded bonding pad 18. The collectors
of the transistors 30, 31, 32 and 33 are connected through
utilization circuits B, C, D and N' to the source of positive
potential applied to the bonding pad 13 from which the additional
biasing current is obtained.
In the circuit shown in the drawing, the emitter area of the
transistors 30 and 31 is indicated as area "A" which is equal to
the emitter area of the transistor diode 15. A unit current "I,"
which is the magnitude of the reference current supplied by the
transistor 11 in the current source 10, flows through the
transistor diode 15 (neglecting base current loading at the node X
by the current source transistors. As is well known, with equal
emitter areas, the current flowing through the current source
transistors 30 and 31 also is equal to "I" since the emitter area
of these transistors is identical to the emitter area of the diode
15.
As indicated in the drawing, the emitter area of the transistor 32
is selected to be A/2 so that the area scaling of the emitter of
this transistor relative to the emitter area of the diode 15 is
such as to cause the current flowing through the biasing current
source transistor 32 to be I/2. The emitter area of the transistor
33 is indicated as NA (where N is a positive integer or a fraction
thereof). The transistor 33 represents a single transistor or
several transistors with a total emitter area NA, supplying a total
current NI to one or more utilization circuits N' (where N' is a
positive integer).
Thus far, the circuit operation which has been described is similar
to the operation generally employed to derive a number of different
valued biasing currents from a single regulated current supply. All
of the currents flowing out of the emitters of the transistors 30,
31, 32 and 33, however, are combined with the original reference
current "I" flowing through the diode 15 and this combined current
flows through the diode 16 to the grounded bonding pad 18. In the
example shown in the drawing, this results in a total current of
(31/2 + N) I flowing through the diode 16. This (31/2 + N) I
current still is independent of the supply voltage and junction
temperature. Since this current is regulated, it may be used as a
reference current for biasing one or more additional current source
transistors which must supply substantially higher biasing currents
to utilization circuits than are supplied by the current source
transistors 30, 31, 32 and 33.
If the emitter area of the diode 16 also is unit area "A," as is
the emitter area of the diode 15, connection of the base-emiter
junction of a biasing current source transistor having the same
emitter area across the diode 16 results in a current drawn by such
a biasing current source transistor in the amount of (31/2 + N) I.
This is a significant current scaling or multiplication of the
initial reference current "I" without an increase of the emitter
area of such a biasing current source transistor over the area of
the emitter of the diode 16. As shown in the drawing, however, a
biasing current source transistor 40 having an emitter area of PA
is controlled by the current flowing through the diode 16. The base
of the transistor 40 is connected to the junction of the diodes 15
and 16, and the emitter of the transistor 40 is connected to the
grounded bonding pad 18. The bias current transistor 40 then
supplies a current of P (31/2 + N) I to the utilization circuit A,
and this current is independent of junction temperature variations
and supply voltage variations. Thus, it is a regulated current
based upon the original regulated reference current "I" supplied by
the transistor 11 in the reference current source 10.
To illustrate the manner in which the circuit which has been
described conserves chip area, assume N=21/2 and P=3. As a result,
the total current flowing through the diode 16 is 6I, and the
emitter current through the transistor 40 is 18I. If it is assumed
that the utilization circuits B, C, D, and N required the current
source transistors 30, 31, 32 and 33, then to achieve this current
of 18I, the total additional emitter area required is 4A (A for the
diode 16 and 3A for the transistor 40).
If the technique shown in the drawing was not employed, the diode
16 would be eliminated and the emitters of the diode 15 and the
transistors 30, 31, 32 and 33 would be connected to the grounded
bonding pad 18. The base of the transistor 40 then would be
connected to node X and the emitter of the transistor 40 would be
connected to the bonding pad 18. To achieve an emitter current of
18I with this conventional circuit, the emitter area of the
transistor 40 would need to be 18 times that of the diode 15 (18A).
This is 4.5 times more emitter area than is required to obtain the
same current using the circuit shown in the drawing and described
above.
Other biasing current source transistors (indicated in dotted
lines) also could be connected across the diode 16 for supplying
currents to additional utilization circuits if desired. The value
of the current supplied by such other current source transistors
would be dependent on the emitter area scaling or ratio to the area
of the emitter of the diode 16.
By using the circuit shown in the drawing, with the reference
current "I" supplied by the reference current source 10, a
substantial saving in the chip area is accomplished while achieving
the desired current ratios. The circuit could be iterated, and more
than the two diodes 15 and 16 could be employed in series circuit
between the resistor 14 and the grounded or reference bonding pad
18. Combining of various currents from other current sources
referenced across diodes higher in the series string then could be
used to provide increasingly greater reference currents for the
diodes lower in the series string. This would permit even greater
current scaling without significant emitter area scaling.
* * * * *