U.S. patent number 3,691,390 [Application Number 04/865,461] was granted by the patent office on 1972-09-12 for composite light source.
This patent grant is currently assigned to Electric-Nuclear Laboratories, Inc.. Invention is credited to Charles Edward Bates, Ken-Tang Chow, John William Stull.
United States Patent |
3,691,390 |
Chow , et al. |
September 12, 1972 |
**Please see images for:
( Certificate of Correction ) ** |
COMPOSITE LIGHT SOURCE
Abstract
Each of an array of "n" number of similar light sources is
repetitively energized in sequence to stimulate emission of light
energy therefrom into an optical system which sums the output of
the individual devices and forms a composite output into a single
beam having a frequency that is "n" times the frequency of each
individual light source.
Inventors: |
Chow; Ken-Tang (Portola Valley,
CA), Stull; John William (Livermore, CA), Bates; Charles
Edward (Campbell, CA) |
Assignee: |
Electric-Nuclear Laboratories,
Inc. (Menlo Park, CA)
|
Family
ID: |
25345561 |
Appl.
No.: |
04/865,461 |
Filed: |
October 10, 1969 |
Current U.S.
Class: |
250/553; 313/500;
372/44.01 |
Current CPC
Class: |
H04B
10/50 (20130101); H01S 5/4025 (20130101); H01S
5/0622 (20130101) |
Current International
Class: |
H01S
5/40 (20060101); H01S 5/00 (20060101); H04B
10/04 (20060101); H01S 5/062 (20060101); G02f
001/28 () |
Field of
Search: |
;250/84,213A,217SS,220
;331/94.5 ;313/18D ;307/311 ;315/169 ;317/235N ;240/41.25 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Stolwein; Walter
Assistant Examiner: Nelms; D. C.
Claims
We claim:
1. A method for multiplying the frequency of the output from a
periodically electrically energized light source comprising
forming an array of a plurality of similar closely adjacent light
sources;
repetitively electrically energizing in sequence each of the light
sources in said array;
gathering and optically mixing the light emitted from the several
energized light sources; and
then optically guiding said light into a composite beam having a
common optical field for the light emitted from each light
source.
2. The method of claim 1 wherein said light sources are
semiconductor light-emitting devices.
3. The method of claim 1 wherein said light sources are
forward-biased gallium arsenide p-n junction diodes.
4. The method of claim 1 wherein said light sources are
forward-biased gallium arsenide p-n junction diodes periodically
energized with bias current in excess of the threshold density
requisite for lasing action.
5. Apparatus for multiplying the frequency of the output from a
periodically electrically energized light source comprising
an array of similar light sources in close spatial
relationship;
means for repetitively electrically energizing in sequence each of
the light sources in said array;
optical means for gathering and mixing the light emitted from the
several energized light sources; and
optical means guiding said light into a composite beam having a
common optical field for the light emitted from each light
source.
6. The apparatus of claim 5 wherein said light sources are
semiconductor light-emitting devices.
7. The apparatus of claim 5 wherein said light sources are
forward-biased gallium arsenide p-n junction diodes.
8. The apparatus of claim 5 wherein said light sources are
forward-biased gallium arsenide p-n junction diodes and wherein
said means for energizing the light sources supplies bias current
to said diodes in excess of the threshold density requisite for
lasing action.
9. The apparatus of claim 5 wherein said means for energizing said
light sources includes a supply of bias current, gate means for
connecting said supply to one of said light sources at a time, and
clock controlled means for enabling said gate means to repetitively
connect each light source in sequence to said supply.
10. The apparatus of claim 5 wherein said optical means for
gathering and mixing light from the light sources comprises a light
transmissive conduit, having a large end gathering radiation
emitted from said light sources and a smaller end for emitting the
combined light from all of said sources, an optically reflective
coating on the exterior surface of said conduit, and a light
transparent aperture at the small end of said conduit.
Description
This invention relates generally to light-emitting devices and more
particularly to a time-multiplexed array of light-emitting devices
which produces a composite radiant output having a frequency that
is a multiple of the frequency of each individual device in the
array.
The principle object of this invention is to provide a method and
means for obtaining a composite light beam which has a frequency
and power that is a multiple of the individual outputs of an array
of periodically energized light-emitting devices.
A particular object of this invention is to provide a method and
means for obtaining a beam of light from an array of semiconductor
light-emitting devices at normal ambient temperature which is
greater by several orders of magnitude in frequency and power than
that heretofore obtainable from one such device alone or connected
in series or parallel with similar devices.
A further object of this invention is to provide a method and means
for obtaining such increase in frequency and power output, without
the necessity for external cooling, from two or more gallium
arsenide crystals periodically forward biased at current densities
either above or below the threshold value for lasing action.
Still another object of this invention is to provide a method and
means for producing a beam of coherent light from two or more
gallium arsenide crystals, without external cooling, which has a
composite output frequency and power that are multiples of those
parameters for each individual crystal.
Still another object of this invention is to provide a method and
means for multiplexing an array of injection laser or spontaneous
light-emitting diodes.
Other objects and advantages of the invention will become apparent
to those skilled in the art upon consideration of the following
description and the accompanying drawings wherein
FIG. 1 illustrates schematically a form of apparatus embodying this
invention which is useful for practicing its method with
semiconductor light-emitting sources;
FIG. 2 is a sectional view of one of the individual semiconductor
light sources employed in the apparatus of FIG. 1;
FIG. 3 is a functional block diagram of the system of the invention
with particular reference to the embodiment of FIG. 1;
FIG. 4 plots the output pulse train of a single one of the
semiconductor light sources of the system of FIG. 3;
FIG. 5 illustrates the output pulse train of the system of FIG. 3
using, for example, five semiconductor light sources;
FIG. 6 illustrates schematically a form of multiplexer employed in
the embodiment shown in FIG. 3;
FIG. 7 is a diagram of the multiplexing time logic for the
embodiment described in FIG. 3; and
FIG. 8 is the circuit diagram of a specific embodiment of the
invention which employs five gallium arsenide laser diodes.
While the general method of and the apparatus components of the
invention are useful with a variety of light sources including
tungsten incandescent lamps, neon lamps, mercury or xenon arc
lamps, the invention is particularly useful with semiconductor
light-emitting devices such as gallium arsenide diodes, and it
overcomes a number of limitations inherent in the use of such
semiconductor devices as light sources.
It has been known for some time that the passage of large currents
through a forward-biased semiconductor p-n junction diode will
produce light radiation. It also is known that a gallium arsenide
p-n junction diode when biased in the forward injection region by
current densities greater than a certain threshold value will emit
radiation at room temperature corresponding to about 9,000
angstroms in wavelength which can be made coherent. At current
densities below that threshold the radiation is an incoherent
spontaneous emission.
The emitted radiation is coherent if (1) the bias current density
does exceed the threshold value to produce an inverted population
of energy states for lasing action and (2) the crystal, itself, is
shaped into an optical resonant cavity. The latter is done by
fabricating the two ends of the crystal parallelopiped very
perpendicular to the plane of the junction and polishing them to
optical flatness. The index of refraction for the air-gallium
arsenide surface is high, so it is not necessary to reflectively
coat the crystal ends. However, reflective coatings are frequently
used to lower the lasing threshold current value. Photons produced
by application of forward bias current in excess of the threshold
value travel along the path between the reflective ends of the
crystal and stimulate other electron-hole pairs to recombine to
emit a photon in phase with the stimulating photon. Reflection of
the emitted photons back and forth within the resonant cavity
produces a standing wave. Since the crystal ends are only partially
reflective, some of that wave is emitted as a beam of coherent
light along the plane of the junction with a narrow spectral
bandwidth.
Gallium arsenide diodes do, however, have very serious limitations
when operated at current densities which will produce coherent
light emission. Recombination of electrons and holes in the lasing
action creates instantaneous localized heating within the
semiconductive material itself so that safe operating currents are
generally no more than about three times the threshold value.
Moreover, other heating effects cause the lasing threshold current
value to increase and the output radiant power at a given value
above threshold to decrease with a rise in temperature.
Accordingly, a useful duty cycle for operation without external
cooling and with a current of three times threshold, limits the
output frequency for practical applications to about 4 KHz.
The present invention overcomes the limitations caused by these
heating effects by combining the radiation output of an array of
individual gallium arsenide diodes repetitively energized in
sequence to obtain a relatively high power and high frequency
output, for instance, as described in the example in the order of
50 KHz.
The embodiment illustrated in FIG. 1 includes a plurality of
injection laser diodes 10 arranged in an array directed to emit
radiation into a light pipe 11 in which the radiation emitted from
the several diodes is mixed and then transmitted to an optical lens
system, designated generally as 12, that forms the composite
radiation into a beam with the desired optical field.
Each injection laser diode 10, as is shown in FIG. 2, includes a
gallium arsenide crystal 13 formed as a p-n junction. The crystal
parallelopiped is an optical resonant cavity and has its two ends
made very perpendicular to the plane of the p-n junction and
polished to optical flatness so that radiation emitted from the
crystal, as shown, is generally in the plane of FIG. 2. The crystal
13 mounts on an electrically conductive base 14 within an envelope
which includes non-conductive cylindrical shell portion 15 and
radiation (light) transparent portion or window 16 secured within
the shell at the end opposite base 14. Electrode 17, integral with
the base, connects one electrical contact of the crystal. Electrode
18, insulated from the base by dielectric material 19, connects the
other contact to supply bias current to the gallium arsenide p-n
junction.
In the illustrated embodiment the light pipe 11 includes a large
generally conically shaped collection portion 20 which gathers
radiation from the plurality of injection laser diodes 10 mounted
at its large end so that they emit radiation through their
respective windows generally along the longitudinal axis of the
light pipe. A cylindrical portion 21 of the light pipe at the small
end of the collection portion 20 transmits the collective radiation
from the several diodes to an optical lens shaping system 12. The
light pipe emits the collective radiation through output aperture
22 to the lens system.
The light pipe is solid light transmissive material such as quartz
or molded plastic. Except for aperture 22, a highly diffuse
reflective coating 23 of magnesium oxide or titanium oxide coats
all exterior surfaces of the light pipe 11, including the conical
collection portion 20 and the cylindrical portion 21. Light energy
radiated into the pipe from the several injection laser diodes by
repeated reflection from the reflectively coated side walls of the
light pipe in passing through the pipe is thoroughly mixed and
scrambled before it emerges from the non-coated aperture 22.
FIG. 3 illustrates schematically one form of circuit whereby a
plurality of injection laser diodes 10 in an array are
time-multiplexed so that their combined output at aperture 22 has a
frequency "n" times the frequency of that of a single diode, where
"n" is the number of diodes in the array. The light output from
each diode, designated in FIG. 3 as 10a, 10b, 10c, 10d . . . 10n,
radiates into the light pipe 11 and the output aperture 22 emits
the combined radiation to the optical lens system 12 of FIG 1.
The system of FIG. 3 repetitively supplies bias current to each of
the injection laser diodes in sequence in short pulses in excess of
the threshold value for lasing action in the order of 50
nanoseconds duration, for example. FIG. 4 illustrates the resultant
output power for a single one of the diodes. FIG. 5 illustrates the
output power for the system of FIG. 3 assuming "n" is a total of
five diodes, A through E, pulsed in sequence with bias current
having the same 50 nanosecond pulse width but separated in time by
250 microseconds. The collective output of the array of diodes thus
is the sum of the output of each diode when this output is gathered
and optically guided in light pipe 11 to emit over the same optical
field. The collective output frequency is a multiple of the number
of pulsed diodes in the array or in the example, 5 times the
frequency of a single diode. It will be apparent that this
technique can be used to achieve practically any output frequency
by selection of the number of diodes.
A master clock 25 operating at the output pulse repetition rate of
the system, f.sub.o, triggers a binary or modulo-"n" counter 26
wherein "n" is the number of laser diodes to be multiplexed. A 1/n
decoder 27 detects each state of the counter ?0-(n-1)! or its
"min-terms" and produces a pulse on one of the "n" output lines of
the decoder. FIG. 6 is a more detailed diagram of this part of the
system. The modulo-"n" counter or binary counter 26 is made up of m
number of bi-stable multivibrators 28, where m equals log.sub.2 n.
The counter outputs f.sub.o /2, f.sub.o /4, f.sub.o /8 . . .
f.sub.o /2.sup.m are fed into the decoder 27 which may be a diode
matrix or series of logic gates that produces a unique output on
one of its "n" output lines so that only one is active at any given
time.
The time relationship between the clock pulses f.sub.o, the
frequency division produced by the binary counter outputs f.sub.o
/2, f.sub.o /4, etc., and the sequence of min-term outputs 1
through n of the decoder appear on FIG. 7.
Each of the repetitive output pulses on the "n" output lines of
decoder 27 operates a corresponding trigger circuit 29a, 29b, 29c,
29d, . . . 29n. Each trigger circuit gates on a corresponding
silicon controlled rectifier switch 30a, 30b, 30c, 30d, . . . 30n.
Each switch connects one of the array of laser diodes 10a, 10b,
etc. to a pulse forming network 31 that supplies forward bias
current at a level in excess of the threshold value for lasing
action from high voltage supply 32. Energy for operating each of
the laser diodes is stored in the pulse forming network, the
impedance of which matches that of the diode in series with a small
ballast resistor. The network determines the pulse width and the
voltage to which the network is charged by supply 32 determines the
amplitude of the pulses.
Power supply 33 drives the binary counter 26, decoder 27 and the
several trigger circuits 29a, 29b, etc.
The described system thus produces for an array of injection laser
diodes, a composite output radiation which has a frequency that is
a multiple (by the number of diodes in the array) of the frequency
of each individual diode and an average power which is the same
multiple at room temperature without cooling.
The system has been configured to produce at ambient room
temperatures an output frequency of 50 KHz using five gallium
arsenide laser diodes operated in the circuit shown in FIG. 8.
Clock 25 is a multivibrator which supplies pulses at repetition
rate f.sub.o to trigger modulo-5 counter 26. It is a Signetics
8280J decade counter connected in the bi-quinary mode. Decoder 27
is an array of logic gates that produces a unique output on one of
its five output lines in response to the state of the counter
outputs supplied to it. In this embodiment decoder 27 is a
Signetics 8251 BCD-to-decimal decoder. The repetitive output pulses
on the five decoder output lines pass to the series of two input
positive NAND gates 29 here shown as a pair of Texas Instruments
Type SN 7400 hex inverter microcircuit elements. Each gate output
switches on a silicon controlled rectifier switch, 30d for example,
in one of five similar modulator circuits incorporating the laser
diodes, 10d for example, and pulse forming network elements.
The foregoing specific embodiment is described for illustrative
purposes only. It will be apparent to those skilled in this art
that modifications to the structure may be practiced and
equivalents substituted for the specific elements described which
are within the scope of the invention defined in the following
claims.
* * * * *