U.S. patent number 3,676,693 [Application Number 05/047,389] was granted by the patent office on 1972-07-11 for method for the production of an ion beam having a large cross-sectional area.
This patent grant is currently assigned to Commissariat A L'Energie Atomique. Invention is credited to Georges Guernet.
United States Patent |
3,676,693 |
Guernet |
July 11, 1972 |
METHOD FOR THE PRODUCTION OF AN ION BEAM HAVING A LARGE
CROSS-SECTIONAL AREA
Abstract
A method and a device for the production of a substantially
parallel ion beam having a large cross-sectional area, wherein a
first double deflection of a parallel incident-ion pencil is
carried out in a same plane X and a second double deflection is
carried out in a perpendicular plane Y by means of at least two
alternating fields having different periods, said fields being
parallel to said planes X and Y and perpendicular to the direction
of the incident-ion beam. This invention relates to a method and a
device for the production of a substantially parallel ion beam
having a large cross-sectional area. In the techniques which make
use of ion beams, it is frequently useful to have available a
substantial beam cross-section while retaining parallel ion paths.
This is particularly true in the technique which involves doping of
semiconductors by ion implantation and which consists in bombarding
a crystal with a beam of heavy ions (P.sup.+, B.sup.+, Al.sup.+,
Ga.sup.+, Te.sup.+, etc . . . ). The ion beam must conform to
particular characteristics. On the one hand, the beam must be
homogeneous and cover a large area. On the other hand, the paths of
the incident ions must coincide with the crystal axis of the target
with a very high degree of accuracy : by way of example, this
latter is 10 to 15 minutes of arc in respect of an energy of
incident ions of 180 keV. It is accordingly the object of this
invention to obtain an ion beam having these different properties.
To this end, the invention proposes a method of production of a
substantially parallel ion beam having a large cross-sectional
area, wherein a first double deflection of a parallel incident-ion
pencil is carried out in a same plane X and a second double
deflection is carried out in a perpendicular plane Y by means of at
least two alternating fields having different periods which are
parallel to said planes X and Y and perpendicular to the direction
of the incident-ion pencil. In a first advantageous form, at least
one of the said two double deflections contained in perpendicular
planes is carried out by means of two alternating electric fields
having the same period which are separated from each other by a
non-deviating zone having instantaneously the same intensity and
opposite directions, said period being very great with respect to
the transit time during which an ion undergoes said double
deflection. In a second advantageous form, at least one of the said
two double deflections contained in the perpendicular planes is
carried out by means of an alternating electric field having a
period substantially equal to the transit time during which an ion
undergoes said double deflection, the maximum radial distance
r.sub.max of an ion which has been subjected to a double deflection
with respect to the center of said incident-ion pencil being given
by the relation , wherein V.sub.max is the difference in maximum
potential established between two parallel flat plates in
oppositely-facing relation which are spaced at a distance d,
wherein L is the length of said plates in the direction of said
incident-ion pencil and wherein V.sub.a is the voltage of
acceleration of the ions in said direction. The present invention
is also directed to a device for carrying out said method. Said
device comprises an ion source which is capable of delivering a
parallel ion pencil, two flat electrodes parallel to a plane X
which are located in oppositely-facing relation and occupy
symmetrical positions with respect to said incident-ion pencil, one
electrode being brought to zero potential, two further flat
electrodes perpendicular to said plane X which are located opposite
to each other and occupy symmetrical positions with respect to said
incident-ion pencil, one electrode being brought to zero potential,
means for establishing a potential difference between two parallel
electrodes in oppositely-facing relation. A better understanding of
the invention will be gained from the following description of
modes of execution of the invention which are given by way of
example without any limitation being implied.
Inventors: |
Guernet; Georges (Grenoble,
FR) |
Assignee: |
Commissariat A L'Energie
Atomique (Paris, FR)
|
Family
ID: |
9036427 |
Appl.
No.: |
05/047,389 |
Filed: |
June 18, 1970 |
Foreign Application Priority Data
|
|
|
|
|
Jun 26, 1969 [FR] |
|
|
6921490 |
|
Current U.S.
Class: |
250/396R;
315/394; 438/514; 250/492.2; 976/DIG.433 |
Current CPC
Class: |
H01J
37/3171 (20130101); G21K 1/087 (20130101); H01J
27/02 (20130101) |
Current International
Class: |
G21K
1/00 (20060101); G21K 1/087 (20060101); H01J
37/317 (20060101); H01J 27/02 (20060101); H01j
037/00 (); G01n 023/00 () |
Field of
Search: |
;148/1.5,187
;250/49.5R,49.5C,49.5T ;313/63,78 ;315/25 ;328/229 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Lindquist; William F.
Claims
What we claim is:
1. The method of increasing the cross-sectional area of a parallel
ion beam, the steps of causing a first double deflection of a
parallel incident ion beam in a plane X by first deflecting the
ions away from the axis of the incident ion beam and then
deflecting the ions back toward said axis such that the resulting
ion beam is parallel to the incident ion beam, and causing a second
double deflection of the ion beam in a plane Y which is
perpendicular to the plane X by first deflecting the ions away from
the axis of the incident ion beam and then deflecting the ions back
towards said axis such that the resulting ion beam is parallel to
the incident ion beam, said two double deflections being caused,
respectively, by at least two alternating electric fields having
different periods, said fields being parallel to said planes X and
Y, respectively, and perpendicular to the direction of the incident
ion beam, said double deflection in both X and Y planes producing a
parallel ion beam of increased cross-sectional area from that of
said incident ion beam, at least one of said two double deflections
being caused by the application of alternating current potential to
one electrode of two spaced electrodes between which the ion beam
passes while maintaining the other of the two spaced electrodes at
ground potential to thereby produce an alternating electric field
having a period substantially equal to k times the transit time
during which an ion undergoes said double deflection, wherein k is
a whole number, and the maximum radial distance r.sub.max of an ion
subjected to a double deflection with respect to the center of said
incident ion beam being:
r.sub.max = ( 1/16) (V.sub.max)/(V.sub.a.d) L.sup.2 /k
wherein v.sub.max is the maximum potential difference established
between said two electrodes spaced at a distance d from each other,
L is the length of said electrode in the direction of said incident
ion beam and V.sub.a is the ion acceleration voltage in said
direction.
2. A method according to claim 1, said alternating electric fields
being produced by an electric signal having a sinusoidal shape.
3. A method according to claim 1, said alternating electric fields
being produced by an electric signal having the shape of an
isosceles triangle in each half-period.
Description
Reference is made in the description to the accompanying drawings
in which
FIGS. 1 and 2 represent the general diagram of two methods which
make it possible to obtain a double deflection contained in a
plane, and
FIG. 3 represents one advantageous mode of execution of the
invention in which the two methods for obtaining a double
deflection are employed in combination.
In order to obtain a uniform radial ion-density of the beam, it has
been found necessary to sweep the parallel pencil of incident ions
derived from an ion source along two axes located at right angles
on the one hand to each other and on the other hand to the
direction of the incident ions. In the particular case of the
technique of ion implantation employed in the construction of
integrated circuits, it is necessary to take into account the ion
channeling conditions which are sought (parallel relation of the
ion path with the crystal axis of the sample) and the implantation
time which is desired for the construction of an integrated
circuit. The solution proposed for obtaining parallel entrance and
exit beams consists in producing a double deflection which is
contained in a single plane. By subjecting the incident ions to
this operation either in two consecutive steps or simultaneously in
two perpendicular planes X and Y, sweeping of the incident-ion
pencil which is thus achieved is similar to the sweep to which an
electron beam is subjected in a cathode-ray tube.
In order to select the values of pencil-sweeping frequencies, the
ion implantation time which is desired for the construction of an
integrated circuit must first be taken into account ; it is then
necessary to prevent the formation of Lissajous figures, that is to
say to give a high value to the ratio f.sub.x /f.sub.y, wherein
f.sub.x and f.sub.y designate the sweep frequencies along two
perpendicular axes X and Y. By way of example, the following pair
of values can be chosen:
f.sub.x = 10 kc/s
f.sub.y = 1 mc/s
In FIG. 1, the double deflection is obtained from two identical
pairs of electrically conducting parallel flat plates located on
each side of the incident-ion pencil, said pairs being spaced at a
distance b from each other over which the ions do not undergo a
deviation (rectilineal path - non-deviating zone). Two diagonally
opposite and therefore not oppositely-facing plates are connected
to the zero potential and the two other plates are brought to an
alternating-current potential. The plate-polarization voltage V is
represented in FIG. 1. The voltage oscillating time or period which
is equal to 100 .mu.secs in this particular case is very great with
respect to the time of transit .tau. of the ions within said
plates. The ionized particle therefore "sees" virtually a
direct-current voltage. In consequence, the angles of deviation to
which an ion is subjected within the two identical pairs of plates
are therefore equal but in opposite directions, thus producing
parallel paths of the ion at the entrance and at the exit. The
radial distance r of an ion with respect to the center of the
incident-ion pencil will be greater as the plate-polarization
voltage V is higher. Its maximum value r.sub.max is given by the
relation :
wherein V.sub.a is the ion acceleration voltage, l is the length of
the plates along the axis of the ion pencil at the entrance of the
plates, d is the distance between two parallel oppositely-facing
plates. For example, if l = 10 cm, b = 22 cm, V.sub.a = 30 kV, d =
15 cm, r.sub.max = 3 cm, we will have V.sub.max = 12 kV. Moreover,
in order to obtain an exit beam which is symmetrical with respect
to the axis of propagation, the applied voltage V must be
symmetrical or, in other words, the signal rise time is equal to
the fall time.
If the transit time .tau. is not negligible compared with the
voltage oscillating time, it is evidently possible to introduce a
time-delay in the signal which is applied to the second pair of
plates encountered by the ions relative to the first pair in order
that the deflecting voltages should remain identical at the moment
when the ions pass at the level of each pair of plates.
In FIG. 2, the double deflection contained in a same plane is
obtained by means of a single pair of electrically conducting
parallel plates located opposite to each other and on each side of
the incident-ion pencil. One of the plates is connected to the zero
potential and the other is connected to the polarizing voltage V.
This alternating-current voltage has an oscillating time or period
which is equal to the time of transit .tau. of the ions within the
interior of the plates. Since an ion is always deflected for a
period of time which corresponds to the period of the
plate-polarization signal, it follows on the one hand that the
paths of the ion at the entrance and at the exit are parallel and
on the other hand that the radial distance r at the exit depends on
the value of the polarization voltage V at the instant at which the
ion penetrates between the plates. As in the case of FIG. 1, the
exit beam is radially homogeneous when the applied polarizing
signal is symmetrical, that is to say when the rise time is equal
to the fall time (for example a signal having the shape of a
sine-wave or of an isosceles triangle).
The inventor has shown that, in a single system of plates, if a
periodic polarizing signal is applied and the period T of said
signal is equal to a whole number which is k times the transit time
.tau. of the particle within the system of plates, the value
r.sub.max of the distance from one ion to the center of the
incident-ion pencil is given by the relation :
r.sub.max = (1/16) (V.sub.max)/(V.sub.a d) L.sup.2 /k
wherein V.sub.a is the ion acceleration voltage, L is the length of
the plates along the axis of propagation of the ions, d is the
distance between the plates and V.sub.max is the maximum value of
the polarizing voltage. It will be noted that, in order to have a
minimum polarizing voltage V.sub.max, the period T of the
polarizing signal must be chosen equal to the transit time .tau. (k
= 1).
It is clear that the two methods can be combined. Thus, a first
double deflection in a plane X is carried out in accordance with
the method described with reference to FIG. 1 and a second double
deflection which can be carried out at the same time as the first
is effected in a plane Y which is perpendicular to X in accordance
with the method described with reference to FIG. 2.
In FIG. 3 which shows an advantageous mode of execution of the
invention, an ion source 1 emits a parallel ion pencil 2 along an
axis Z. Two identical pairs of electrically conducting parallel
flat plates 3-4 and 5-6 are disposed symmetrically on each side of
the beam and said pairs are spaced so as to form a non-deviating
zone in a plane parallel to said plates. One pair of parallel flat
plates 7 and 8 which are located in oppositely-facing relation is
disposed at right angles to the plates 3, 4, 5 and 6 and extends
over the same portion of the axis Z as said plates 3, 4, 5 and 6.
The plates 4, 5 and 7 are connected to the zero potential and means
(not shown) serve to polarize the plates 3, 6 and 8, the two first
plates (namely the plates 3 and 6) being polarized in the same
manner. The voltage applied to the plate 8 is sinusoidal and has a
period or oscillating time which is equal to 1 .mu.sec and the
maximum value V.sub.max of the voltage is 12 kV. The voltage
applied to the plates 3 and 6 is periodic and has an oscillating
time equal to 100 .mu.secs, the maximum voltage V.sub.max is 12 kV
and the polarizing signal over one-half period has the shape of an
isosceles triangle. The lengths have the following values in
millimeters : l = 100, b = 230, L = 430, d = 150.
It is readily apparent that the present invention is not limited
solely to the embodiment which has been illustrated and described
by way of example and that the scope of this patent also extends to
alternative forms of either all or part of the arrangements herein
described which remain within the definition of equivalent means as
well as to any applications of such arrangements.
In particular, the deflections of the beam can be carried out at X
and at Y successively in two separate zones and not simultaneously
in the same zone and the electrostatic deflections can be replaced
by electromagnetic deflections.
* * * * *