U.S. patent number 3,671,743 [Application Number 04/813,259] was granted by the patent office on 1972-06-20 for electron microscopy.
Invention is credited to Cambridge, GB2, William Charles Nixon.
United States Patent |
3,671,743 |
|
June 20, 1972 |
ELECTRON MICROSCOPY
Abstract
Mirror electron microscope techniques are used indirectly to
examine the electric or magnetic field in a specimen, such as a
biological cell, situated outside the evacuated microscope chamber
by examining the field on a layer or surface immediately inside a
wall of the chamber adjacent the outside of which the specimen is
placed.
Inventors: |
William Charles Nixon (2
Causewayside Fen Causeway), Cambridge, GB2 (N/A) |
Family
ID: |
10068196 |
Appl.
No.: |
04/813,259 |
Filed: |
April 3, 1969 |
Foreign Application Priority Data
|
|
|
|
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Jul 3, 1968 [GB3] |
|
|
15,935/68 |
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Current U.S.
Class: |
250/310 |
Current CPC
Class: |
H01J
37/29 (20130101); H01J 37/266 (20130101) |
Current International
Class: |
H01J
37/29 (20060101); H01J 37/26 (20060101); H01j
037/26 (); G01n 023/00 () |
Field of
Search: |
;250/49.5A,49.5PE |
References Cited
[Referenced By]
U.S. Patent Documents
Other References
"Scanning Electron Microscopy" by C. W. Oatley et al. from Advances
in .
Electronics and Electron Physics, Academic Press, New York, Vol.
21, .
1965, pages 181 & 241-246..
|
Primary Examiner: William F. Lindquist
Attorney, Agent or Firm: Scrivener, Parker, Scrivener &
Clarke
Claims
1. An electron microscope for examining the electrical field
pattern at the surface of a specimen comprising an enclosure
defining an evacuated chamber, a wall of said enclosure having
inner and outer faces, said wall being of thin, gas impermeable
electrically insulating dielectric material, means for generating a
beam of electrons within said chamber and directing it towards said
wall, a coating of electrically conducting material on the inner
face of said wall at a negative potential selected to subject the
electrons of said beam to a strong retarding action in the final
part of their approach to the coating and to return them before
they reach said coating in the general direction from which they
came, means for locating a specimen against the outer face of said
wall and within the area defined by the coating on the inner face
of said wall, said specimen, wall and coating defining a capacitor
wherein any non-uniform static electrical charge distribution
present on said specimen surface is imaged by capacitor effect as
an electrical charge distribution on said coating, and collecting
and image-forming means for revealing the field distribution on
said coating by the effect of said field distribution on the paths
of the returning electrons.
Description
This invention relates to electron microscopy. In the so-called
mirror electron microscope a diffuse beam of electrons is projected
towards the specimen to be examined and the specimen is maintained
at a potential almost equal to or slightly negative with respect to
that of the gun from which the electrons originate, so that the
electrons are subjected to a strong retarding field as they
approach close to the specimen and in fact never reach it but are
turned back and, in the absence of any disturbing influence, they
return along the path by which they approached the specimen.
However any irregularities of contour or of electrical or magnetic
field at the surface of the specimen will influence the paths of
the electrons as they are moving slowly in the immediate
neighborhood of the specimen surface and so if an image is formed
with the returned electrons this image will show contrast
characteristic of the contour and/or field at the specimen
surface.
Such an arrangement has been used for examining the pattern of the
electric or magnetic field at, for example, the surface of an
integrated circuit element. However, the method has hitherto
depended on the specimen being inside the vacuum chamber in which
the electron beam and the image are formed. This precludes straight
away the examination of those specimens which require to be in an
environment at atmospheric pressure.
An attempt has been made with an ordinary transmission microscope,
working with electrons of exceptionally high energy, to observe
living tissues enclosed in a tiny chamber, only a few microns
thick, which is at atmospheric pressure and has entry and exit
windows for the electrons, but the high energy of the electrons
necessitates apparatus of high cost and large dimensions and the
unwanted X-rays that are produced necessitate heavy shielding to
protect the users. Moreover, the high energy electrons and the
X-rays soon destroy the tissues which are being observed.
The aim of the present invention is to provide a new technique for
examining the distribution of electrical or magnetic contrast, or
even other forms of contrast, in a specimen without the specimen
having to be within the high vacuum that prevails inside the
microscope. According to the invention this is achieved by placing
the specimen against the outside of a thin substantially
gas-impermeable wall, on the inside of which is an at least
partially conducting layer that is examined by the use of mirror
microscopy techniques. Where the contrast to be examined is
electrical field or electrical charge distribution the wall would
be of electrically insulating material and would effectively form
the dielectric in a capacitor with the specimen on the outside
forming one plate and the layer on the inside forming the other.
The electrical charge pattern on this layer is an image of that on
the specimen itself. Thus in forming a contrast image, in the
mirror microscope, of the distribution of charge in the conducting
layer I obtain indirectly an image of the distribution of charges,
and hence of electrical potentials, in the specimen that is outside
the microscope chamber.
Where the field to be examined is a magnetic one the wall must be
non-magnetic but could be electrically conducting.
The invention will now be further described with reference to the
accompanying diagrammatic drawing.
In this drawing a portion of the wall of a mirror electron
microscope is illustrated at W. The microscope can be of the
general kind described by M. E. Barnett and W. C. Nixon in the
Journal of Scientific Instruments, 1967, Vol. 44 page 893 to 898. A
relatively diffuse beam of electrons, not a finely focused probe,
approaches the target but, as the target is at substantially the
same potential as the gun at which the electrons are generated, the
electrons are subjected to a strong retarding action in the final
part of their approach to the target and in fact never reach it but
return in the general direction from which they came. Thus while
they are close to the target they are moving only very slowly and
are strongly affected by any electrical or magnetic fields present
in the region close to the target. The returning electrons are
collected and formed into an image which reveals the field
distribution at the target without ever actually coming into
contact with it.
In normal mirror microscopy the target is the specimen under
examination. In the arrangement according to the present invention
the target is a layer L of electrically conducting material on the
inside face of the wall W, the wall being of electrically
non-conducting material and being gas-impermeable. The wall W is as
thin as possible consistent with being strong enough to withstand
the pressure difference between the high vacuum on the inside and
the pressure, which will normally be atmospheric, outside.
The specimen, indicated as S, is placed against the outside of the
wall W opposite the layer L. As indicated, any electrical charge
distribution in that surface of the specimen in which is against or
close to the wall W is reproduced in the layer L. Preferably the
layer L is of material which has a very high resistance and it
could be a semi-conductor, so that the charge on it does not leak
away too rapidly.
The diffuse electron beam is indicated at B. In an alternative
arrangement it could be in the form of a finely focused beam or
probe that scans the layer L in a time-sequential manner like the
beam of an ordinary scanning electron microscope, but the same
technique of subjecting the electrons to a retarding field and
turning them back would still be employed.
Where the specimen S contains magnetic rather than electric
contrast then the wall W could be of electrically conducting
material, but it must be non-magnetic. Where the wall is of
insulating material the layer L is retained, but this layer could
be omitted where the wall is electrically conducting, and then the
wall itself could be at the appropriate potential to provide the
necessary retarding field. The action is analogous to the
electrical charge version in that the electrons are strongly
influenced by the magnetic field of the specimen itself during the
period in which they are moving slowly in the region close to the
wall.
It will be appreciated that the invention opens the way to the
examination, by electron microscope techniques, of electrical
fields and potential patterns, and magnetic fields, in specimens
that cannot be put into a vacuum, and in particular living
biological tissues, such as nerve cells, and allows these to be
studied over long periods, as the specimen is not subjected to any
radiation.
In a modification the electron beam could be allowed actually to
strike the wall W at low impact energy and the contrast image would
be formed by the resulting secondary electrons rather than by
returning primaries but, like the returning primaries of the
example described above, these secondary electrons would be
strongly influenced by the local electric or magnetic field at the
wall.
* * * * *