U.S. patent number 3,669,860 [Application Number 05/024,571] was granted by the patent office on 1972-06-13 for method and apparatus for applying a film to a substrate surface by diode sputtering.
This patent grant is currently assigned to Zenith Radio Corporation. Invention is credited to Daniel A. Eaton, Terence J. Knowles.
United States Patent |
3,669,860 |
Knowles , et al. |
June 13, 1972 |
METHOD AND APPARATUS FOR APPLYING A FILM TO A SUBSTRATE SURFACE BY
DIODE SPUTTERING
Abstract
Diode sputtering apparatus deposits a film on a substrate
surface while protecting the substrate against overheating and
other adverse effects due to electron bombardment. A magnetic
field, transverse to an electric field between the cathode and
substrate surface, is rotated about the cathode-substrate axis to
deflect electrons submitted from the cathode into paths clear of
the substrate surface. Further advantages in uniformity and
increased rate of depositions are achieved.
Inventors: |
Knowles; Terence J. (Oak Park,
IL), Eaton; Daniel A. (Chicago, IL) |
Assignee: |
Zenith Radio Corporation
(Chicago, IL)
|
Family
ID: |
21821276 |
Appl.
No.: |
05/024,571 |
Filed: |
April 1, 1970 |
Current U.S.
Class: |
204/192.12;
204/298.16 |
Current CPC
Class: |
C23C
14/541 (20130101); C23C 14/35 (20130101) |
Current International
Class: |
C23C
14/54 (20060101); C23C 14/35 (20060101); C23c
015/00 () |
Field of
Search: |
;204/192,298 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Mack; John H.
Assistant Examiner: Kanter; Sidney S.
Claims
We claim:
1. In a method of depositing a film on a substrate surface by a
diode sputtering technique wherein a surface of a cathode is
located with respect to the substrate surface in space-opposed
parallel relationship in a gas environment, said cathode surface
being aligned with said substrate surface on a cathode-substrate
axis normal to said surfaces, and an electric field, having a
polarity and strength operable to ionize the gas and to bombard the
cathode surface with gas ions, is applied to cause the cathode to
emit electrons and to eject material from the cathode surface, the
improvement comprising the steps of:
deflecting said emitted electrons in a transverse direction clear
of the substrate by establishing a magnetic field extending
transversely through the space between the cathode and
substrate;
and rotating said electron deflection direction by moving said
magnetic field in a selected pattern relative to said cathode and
substrate to compensate inequalities in ion density due to said
electron deflection and mitigate substrate heating by said
electrons while achieving a desired distribution of particles
within said film.
2. In the method of claim 1 wherein said cathode surface and said
substrate are positioned in parallel relationship to each other and
symmetrically aligned with respect to an axis normal to said
surfaces;
the improvement wherein said magnetic field is moved in rotation
about said axis.
3. The method of claim 1 which further includes the steps of:
disposing a screen of a second material between said cathode
surface and said substrate surface;
and maintaining a predetermined electric potential difference
between said screen and substrate surface to effect disposition of
said second material upon said film.
4. The method defined in claim 3 in which:
said magnetic field is confined to a region spaced from said
substrate surface;
and said screen is disposed between said magnetic field and said
substrate surface.
5. A diode sputtering apparatus for use in a system for depositing
films of material upon a substrate, which system includes an
envelope for containing an ionizable gas and means for introducing
said gas within said envelope, said apparatus comprising:
an anode disposed within said envelope;
a cathode disposed within said envelope spaced from said anode and
defining an axis therebetween, said cathode adapted to support said
material to face said anode;
means for applying an electric field between said anode and cathode
subjecting said gas to ionization and polarization and of a
strength to effect bombardment of said cathode with ions of said
gas having sufficient energy to dislodge from said surface layer
particles that are attracted toward said anode;
means for disposing said substrate on said axis in the path of said
particles;
and means for creating a magnetic field rotating about said axis
with a strength sufficient to sweep electrons, traveling along said
path, outwardly from said axis away from said substrate.
6. In an apparatus for use in a diode sputtering system, which
system includes means defining a closed chamber for containing a
gas under low pressure and means for introducing said gas into said
chamber, said apparatus including a cathode having a flat surface
mounted in said chamber, a flat substrate support platform mounted
in said chamber in spaced-opposed parallel relationship to said
cathode surface and aligned therewith on a cathode-platform axis
normal to said surfaces, and means for applying an electric field
between said cathode and said platform, the improvement
comprising:
means for deflecting said emitted electrons in a direction
transverse to said axis to clear said substrate, including means
for establishing a magnetic field extending transversely across the
space between said cathode and said platform;
and means for rotating said electron deflection direction about
said axis including means for moving said magnetic field relative
to said cathode and said platform in a selected path about said
cathode-platform axis.
7. Sputtering apparatus as defined in claim 6 in which said
establishing means comprises a plurality of electromagnets mounted
in diametrically opposed pairs externally of said chamber at
uniformly spaced locations about said axis;
and said moving means comprises a multiphase alternating current
power source connected to supply peak current to said
electromagnets in succession to cause the peak magnetic field to
rotate about said cathode-platform axis.
8. Sputtering apparatus as defined in claim 7 which further
includes:
a plurality of magnetic pole pieces mounted in said chamber, each
of said pole pieces individually being aligned respectively with
one of said electromagnets.
9. Sputtering apparatus as defined in claim 6 which further
includes:
means for supporting a grid-like screen, of a material dissimilar
to said surface of said cathode, in said chamber at a location
between said cathode and said support platform.
10. Sputtering apparatus as defined in claim 9 which further
includes:
means for confining said magnetic field to a region spaced from
said substrate, and in which said screen is supported within the
space between said support platform and said magnetic field.
Description
BACKGROUND OF THE INVENTION
This invention relates to film-forming techniques. More
particularly, it pertains to improvements in the art of sputtering
thin films of virtually any desired materials, such as insulators,
conductors or cermets, for example.
The application of thin films to substrate surfaces by sputtering
is a well-known and conventional technique. In practicing this
technique, a cathode composed of or coated with a layer of the
material from which the film is to be formed is mounted in a closed
chamber filled with a gas mixture at a pressure corresponding to a
reasonably high vacuum. The substrate is supported with the surface
to be coated spaced from the cathode surface. An electric field is
established by connecting the cathode and an anode across a
suitable electric potential source. Upon the establishment of the
electric field, the gas becomes ionized and the ions bombard the
cathode surface with energy sufficient to dislodge cathode material
which spreads throughout the chamber. A certain portion of the
particles is deposited on the substrate surface.
In addition to dislodging molecular or atomic particles, the ions
bombarding the cathode surface also cause the emission of electrons
which are accelerated by the electric field to relatively high
velocities and, upon striking the substrate, develop a considerable
amount of heat. Because of such heat generation, most sputtering
apparatus includes a circulating water system or the like for
cooling the substrate support with which the substrate is in
contact. Despite such substrate cooling and even at modest
deposition rates, the dissipation of energy in the substrate often
is sufficient that it melts, shatters or distorts.
It is a primary object of the present invention to provide methods
and apparatus for depositing film on substrate surfaces in which
the aforementioned heating effect is minimized or at least reduced
to an acceptable level.
In the past, the above-described heating effect in sputtering
operations has been reduced, where the substrate is parallel to the
cathode surface, by applying a static magnetic field perpendicular
to the electric field. The magnetic field deflects electrons from
their normal path from cathode to substrate and, by suitably
adjusting the strength of the magnetic field, all or a large
portion of the electrons can be deflected to paths such that they
do not strike the substrate surface and hence do not generate heat
in the substrate.
While the application of a magnetic field in the foregoing manner
is satisfactory in many instances, it does not lend itself well to
applications where a uniform or otherwise controlled film thickness
is essential, as, for example, in coating miniature electrical
circuit components. When a magnetic field is applied to deflect the
electrons to one side of their normal path, it has been found that
this results in an increased density of electrons at one side of
the cathode-substrate axis and the increased number of electrons in
this region gives rise to a corresponding increase in the
ionization of gas in this region. Thus, upon the application of a
magnetic field to deflect the electrons, a situation is created
wherein the cathode surface is subjected to a heavier bombardment
of ions at one side than at the other. This, in turn, results in a
heavier or more dense deposition of the molecular or atomic
particles toward one edge of the substrate and a corresponding
lighter or less dense deposition near its opposite edge. For
electrical circuit components wherein a uniform film thickness is
required, the non-uniform deposition resulting from the application
of a stationary magnetic field is unacceptable.
It is, accordingly, another object of the invention to provide
methods and apparatus for depositing, by sputtering, a film of
uniform thickness on a substrate without overheating the
substrate.
It is another object of the present invention to provide methods
and apparatus that enable film deposition at increased rates.
A further object of the present invention is to provide methods and
apparatus for depositing films of accurately-controllable thickness
distribution.
Still another object of the present invention is to provide methods
and apparatus for depositing a composite film made up of two
dissimilar materials.
A still further and more detailed object of the invention is to
provide a sputtering apparatus operable to deposit a film on a
thermally fragile substrate.
SUMMARY OF THE INVENTION
The practice of the present invention involves use of a sputtering
technique wherein the surface of a cathode is located in
space-opposed relationship to the substrate surface. The operation
takes place in a gas environment. An electric field, having a
polarity and strength operable to ionize the gas and to bombard the
cathode surface with gas ions, causes the cathode to emit electrons
as well as to dislodge minute particles of material from the
cathode surface. A magnetic field extends transversely through the
space between the cathode and substrate to deflect electrons
emitted from the cathode transversely clear of the substrate. The
magnetic field is moved in a selected manner in order to achieve a
desired distribution of particles within the deposited film. To
achieve uniform film deposition, the magnetic field is rotated
about an axis or path extending between the cathode and the
substrate being coated.
The features of the present invention which are believed to be
novel are set forth with particularity in the appended claims. The
invention, together with further objects and advantages thereof,
may best be understood by reference to the following description
taken in connection with the accompanying drawings, in the several
figures of which like reference numerals identify like elements,
and in which:
FIG. 1 is a simplified vertical cross-sectional view through a
sputtering apparatus embodying the present invention;
FIG. 2 is a cross-sectional view taken approximately on line 2--2
of FIG. 1;
FIG. 3 is a schematic diagrammatic view of a second embodiment of
the invention; and
FIG. 4 is a diagrammatic view illustrating certain aspects of the
operation of the FIG. 1 embodiment.
Referring first to FIGS. 1 and 2, a sputtering apparatus includes a
metal base plate 10 upon which is mounted and sealed a hollow
cylindrical glass wall 12 having a cover 14 mounted and sealed upon
its upper end. Base plate 10, wall 12 and cover 14 cooperatively
define a sealed chamber designated generally by the numeral 16 and
which can be evacuated by a vacuum pump 18 whose inlet conduit 20
is led into chamber 16 through base plate 10. In the usual case,
better results are achieved if the residual gas atmosphere within
the chamber is a gas other than air. Hence, a gas source 22 is also
connected to chamber 16 via a conduit 24. Typically, the gas
supplied from source 22 is argon or an argon-oxygen mixture, and a
pressure of about one micron of mercury is maintained in chamber
16.
Within chamber 16, a substrate support pedestal 26 is fixedly
mounted upon base 10 and has at its upper end a support platform 28
upon which a substrate S, which is to be coated, is supported.
Pedestal 26 and platform 28 are of electrically conductive material
and are electrically grounded. Preferably, pedestal 26 and platform
28 are actively cooled during operation of the apparatus, as by a
circulating coolant system designated generally by the numeral 30.
A cathode assembly 32 of conductive material depends from cover 14
and includes a cathode element 34 which is either formed from the
material which is to constitute the film applied to the substrate
or is provided with a layer of the desired material on the cathode
surface which faces the substrate support platform. The cathode is
electrically connected to one side of a suitable electric power
source the other side of which also is connected to ground. As
indicated schematically, the power in this case is supplied from a
radio-frequency power source 36 which typically operates at 13.65
Megahertz.
The structure described thus far represents a conventional and
well-known sputtering apparatus. In operation, the application of
power between ground and cathode 34 establishes an electric field
between the cathode surface and substrate support platform 28 which
acts as an anode. The electric field ionizes the residual gas in
chamber 16 and the gas ions are electrically attracted to and
bombard the lower surface of cathode 34.
The ion bombardment causes particles of the cathode material to be
ejected from the cathode surface. On being dislodged, they spread
out in directions which are more or less mechanically determined by
the transfer of momentum from the bombarding ion that causes their
dislodgement from cathode 34.
While the direction in which the particles leave cathode 34 is
dependent on many factors, the characteristics of the system as
illustrated are such that the distribution of particles from
cathode 34 is most dense at or close to the center of the substrate
and falls off as the radial distance outwardly from the center
increases. This decrease in density occurs approximately as a
cosine function. The metal particles thus coat the exposed surface
of the substrate S heaviest near its center, while the thickness
tapers off at greater radial distances from the center.
Also leaving cathode 34 are electrons which are accelerated by the
electric field and are confined by that field to paths
perpendicular to the cathode and support platform surfaces. The
strength of the electric field is sufficient that the electrons
emitted from cathode 34 are accelerated to high velocities and thus
impart a substantial amount of energy to the surfaces which they
strike. This action induces considerable heating in substrate S.
Coolant system 30 seeks to dissipate such heat from pedestal
26.
As here employed, the described apparatus is especially concerned
with use of the sputtering technique described above for coating
substrates which may be thought of as being "thermally fragile" due
to their physical characteristics or size. The term "thermally
fragile" is used to characterize a substrate which would be
adversely affected by the electron heating effect just
discussed.
In accordance with the invention, to eliminate or at least
materially reduce the heating effect of the electron bombardment of
substrate S, the metallic particles are sputtered through a moving
magnetic field. The field extends transversely across the space
between cathode 34 and substrate S at right angles to the electric
field, and it is rotated about the central cathode-substrate
axis.
As shown, the magnetic field is created by three opposed pairs of
electromagnets 40A-40B, 42A-42B, and 44A-44B respectively. As best
seen in FIG. 2, the magnets are symmetrically disposed about the
central cathode-substrate axis and are supported upon a fixed frame
46 mounted upon base plate 10 to locate the respective magnets at
the exterior of chamber wall 12. The respective magnet pairs are
electrically connected to a three-phase alternating current power
supply so that each magnet pair is connected to one of the three
phases. Like in an electric motor, this manner of connection
creates a magnetic field that rotates around the central
cathode-substrate axis.
In order to concentrate the magnetic fields generated by the
electromagnet pairs located outside of chamber 16, a series of
magnetic pole pieces 48 are mounted within chamber 16 on a
framework 50, each pole piece 48 being axially aligned with a
respective one of the external electromagnets. Pole pieces 48 are
constructed simply as solid cylinders of a material such as soft
iron that has a relatively high magnetic permeability. Preferably,
the apparatus might well be constructed so that wall 12 more
closely surrounds substrate S, rendering it unnecessary to employ
the additional pole pieces 48.
FIG. 4 illustrates the affect of the magnetic field upon the
electron paths. The magnetic flux lines are assumed to be into the
plane of the drawing. In the absence of any magnetic field, the
normal path of the electrons emitted from cathode 34 would be
perpendicular to the cathode surface. Upon the application of the
magnetic field, however, the electrons are deflected to one side as
indicated by paths E. Assuming for a moment that the magnetic field
is stationary, the net result would be that the sputtered material
is deposited upon substrate S more heavily on one side as
represented by curve M.sub.1. As shown, the thickness variation is
grossly exaggerated for purposes of illustration.
The reason for such non-uniformity of distribution of the deposited
particles may best be understood by reference to the graph in the
lower portion of FIG. 4. In this graph, the particle density
distribution is plotted against radial distance from the central
substrate-cathode axis A. Solid-line curve N illustrates the normal
distribution of particles on substrate S which might be expected in
the absence of a magnetic field. Curve N is symmetrical about a
maximum peak on axis A and falls off to both sides with increasing
distance from axis A. Again, the height curve N is grossly
exaggerated for purposes of illustration. This curve represents a
so-called normal condition which exists in the absence of a
magnetic field and when the surface of cathode 34 is bombarded by
ions uniformly over its entire area.
During operation, ionization is achieved by collisions between gas
molecules and electrons emitted from cathode 34. In the absence of
a magnetic field, the ionization due to electrons emitted from
cathode 34 is uniformly distributed about cathode-substrate axis A,
except possibly at the cathode edge where the field is slightly
higher. As a result, a symmetrical distribution of particles over
the surface of substrate S would occur.
Again assuming the existence of a stationary magnetic field, the
distribution of electrons in the space between cathode 34 and the
substrate is altered by that field. The electrons effectively are
biased toward one side of axis A as indicated by the paths E. In
the presence of a stationary magnetic field, therefore, more
electrons are located to one side of axis A as a result of which
more ionization of the gas occurs in the region to that one side.
Since more gas is ionized on that one side of axis A, more ions
bombard that side of the cathode and, thus, more particles are
deposited on that portion of substrate S.
The net effect of the application of the magnetic field, then, is
to shift the particle distribution to one side, as represented by
the position of curve NM in FIG. 4. This is the reason for the
similar shape of curve M.sub.1. Another way of viewing this effect
is to consider that the axis I of maximum particle distribution is
shifted out of coincidence with the central cathode-substrate axis
A.
The strength of the magnetic field is chosen to be such that
substantially all of the electrons are deflected to paths which
pass clear of the edges of substrate S. By deflecting the electrons
in this manner, heating of substrate S due to electron bombardment
is minimized or eliminated.
At the same time, the non-uniform distribution on substrate S is
minimized or substantially eliminated by causing the magnetic field
to rotate about axis A. Curve M.sub.2 in FIG. 4 represents the
particle distribution on substrate S when the magnetic field has
been rotated 180.degree. from the position at which it gave rise to
the particle distribution indicated by curve M.sub.1. In rotating
the magnetic field, the non-uniform distribution is averaged out
over 360.degree. so that a substantially uniform distribution over
the entire substrate surface is achieved. The particle distribution
near the center of the substrate at axis A remains substantially
constant while the particle distribution at greater distances from
axis A is alternately increased and decreased relative to the
average distribution.
In addition to achieving uniformity of particle distribution on
substrate S, the spiralling of the electrons in the magnetic field
substantially increases the length of the path of movement of the
electrons through the space between cathode 34 and substrate S, and
that correspondingly increases the possibilities of collisions
between the electrons and gas molecules or atoms to cause
ionization. By achieving increased ionization, the corresponding
increase in cathode bombardment effects a similar increase in the
rate of deposition of particles upon substrate S.
Some of the particles dislodged from cathode 34 are deposited upon
pole pieces 48 during operation of the apparatus. Such coating of
pole pieces 48 with the cathode material is advantageous, since it
in effect provides a seal coating and eliminates the possibility of
contaminating substrate S with metal from the pole pieces.
Moreover, location of the electromagnets themselves outside of
chamber 16 avoids any possibility of contamination arising from the
electromagnets.
While the optimum operating conditions of the apparatus shown in
FIGS. 1 and 2 are normally determined by trial and error, the
following example may be considered typical. Cathode 34 is of solid
alumina (A1.sub.2 0.sub.3) 4 inches in diameter and is spaced 6
centimeters from support plate 28 which is of copper. RF source 36
operates at 13.65 Megahertz and the magnetic field has a strength
of 60 Gauss and rotates at 60 revolutions per second. Substrate S
in this example is a borosilicate glass slide. With this
arrangement, it has been found that the substrate temperature and
deposition rate vary in approximately linear proportion to the
power supplied from source 36. For an RF power of 500 watts, the
substrate temperature increase is about 80.degree. Centigrade and
the deposition rate is about 50 Angstroms per minute. Using the
same physical set-up but without application of the magnetic field,
the glass slides melted or shattered.
A modified embodiment is shown in the schematic diagram of FIG. 3,
wherein the film applied to substrate S is a cermet composed of
insulating cathode material, such as alumina, and a metal, such as
gold, from a grid-like screen 50. With the exception of the
presence of screen 50 and its support ring 54, the apparatus of
FIG. 3 is generally similar to that of FIG. 1. Screen 50 is biased
at a negative potential with respect to the grounded support plate
28 by a suitable adjustable DC source, shown schematically as a
variable battery 52.
Because it is biased negative with respect to the anode, screen 50
is likewise subjected to ion bombardment and molecular or atomic
particles of the screen are dislodged and transferred to substrate
S in the same manner as deposition of the particles from cathode
34. In order to minimize, as much as possible, bombardment of
screen 50 by electrons emitted from cathode 34, the screen
preferably is supported below the magnetic field developed between
pole pieces 48. While the rotating magnetic field thus does not
have any influence on electrons emitted from screen 50, the
potential difference between screen 50 and plate 28 is far less
than that between plate 28 and cathode 34. Consequently, any
electrons that are emitted from screen 50 do not reach the high
velocities attained by electrons emitted from cathode 34. Thus,
such screen-produced electrons have very little heating effect on
substrate S.
The improvements contributed by the present invention have been
seen to require but comparatively simple modification of what may
be existing sputtering apparatus. By subjecting the sputtered
cathode material to a rotating magnetic field, it is possible to
achieve more uniform coating thickness throughout the substrate
surface while at the same time reducing unwanted heating of the
substrate. Moreover, the presence of the magnetic field enables an
increase in the rate of deposition and localization of the
plasma.
As described above with reference to FIG. 4, the strength and speed
of rotation of the magnetic field is selected so that what would be
a non-uniformity in coating distribution is averaged out in each
360.degree. of rotation so as to achieve the desired uniformity.
Alternatively, the strength of the magnetic field may be changed so
as purposefully to result in a controlled non-uniform or graded
distribution of coating thickness. That is, by increasing the field
strength so that the peaks of curves M.sub.1 and M.sub.2 are moved
a greater distance from axis A, the result is to make the coating
thicker toward the outside edges of the substrate. On the other
hand, a decrease in the strength of the magnetic field permits the
coating to be somewhat thicker toward the central region of the
substrate. It can be seen, then, that analogous changes in the
speed and constancy of rotation of the magnetic field can be
utilized to affect the coating distribution. In any event, the
magnetic field is moved relative to the cathode in some
predetermined pattern selected in order to achieve a desired
distribution of the coating particles within the coating film that
is deposited.
While particular embodiments of the invention have been shown and
described, it will be obvious to those skilled in the art that
changes and modifications may be made without departing from the
invention in its broader aspects, and, therefore, the aim is the
appended claims is to cover all such changes and modifications as
fall within the true spirit and scope of the invention.
* * * * *