U.S. patent number 3,623,712 [Application Number 04/866,473] was granted by the patent office on 1971-11-30 for epitaxial radiation heated reactor and process.
This patent grant is currently assigned to Applied Materials Technology, Inc.. Invention is credited to Walter C. Benzing, Michael A. McNeilly.
United States Patent |
3,623,712 |
McNeilly , et al. |
November 30, 1971 |
EPITAXIAL RADIATION HEATED REACTOR AND PROCESS
Abstract
Apparatus and process for vapor depositing epitaxial films on
substrates. A gaseous reactant is introduced into a reaction
chamber formed from a material, such as quartz, which is
transparent and nonobstructive to radiant heat energy transmitted
at a predetermined short wavelength. A graphite susceptor, which is
opaque to and absorbs the radiant heat energy, is positioned within
the reaction chamber and supports the substrates to be coated. The
susceptor is heated while the walls of the reaction chamber remain
cool to preclude deposition of epitaxial film on the walls. To
insure uniform heating of the susceptor, the same may be moved
relative to the radiant heat source which, in the preferred
embodiment, comprises a bank of tungsten filament quartz-iodine
high intensity lamps.
Inventors: |
McNeilly; Michael A. (Saratoga,
CA), Benzing; Walter C. (Saratoga, CA) |
Assignee: |
Applied Materials Technology,
Inc. (Santa Clara, CA)
|
Family
ID: |
25347688 |
Appl.
No.: |
04/866,473 |
Filed: |
October 15, 1969 |
Current U.S.
Class: |
118/725; 34/275;
118/729; 148/DIG.6; 148/DIG.71; 392/416; 392/418; 432/31 |
Current CPC
Class: |
F27B
17/02 (20130101); Y10S 148/006 (20130101); Y10S
148/071 (20130101) |
Current International
Class: |
F27B
17/02 (20060101); F27B 17/00 (20060101); F27b
005/00 () |
Field of
Search: |
;263/41,42 ;34/4 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Camby; John J.
Claims
What is claimed is:
1. A cool wall radiation heated reactor for effecting epitaxial and
like chemical vapor deposition reactions therein on a heated
substrate positioned therein and heated thereby, comprising
A. a radiant heat source for producing and transmitting radiant
heat energy of short wave length,
B. means defining a reaction chamber, for receiving therein a
substrate to be coated, positioned adjacent said heat source,
1. at least that portion of a wall of said reaction chamber which
is positioned adjacent said heat source being formed from a
material which is transparent to heat energy at the wave length
produced by said heat source so that such heat energy is
transmitted through said wall without absorption thereby, whereby
said wall remains cool and substantially free of film deposits
during operation of said reactor, and
C. susceptor means to be heated by said heat source positioned
within said reaction chamber for supporting said substrate thereon
during operation of said reactor,
1. said susceptor means including a susceptor body formed from a
material which is opaque to said heat energy and which absorbs the
same and is heated thereby,
2. said susceptor body maintaining the temperature of said
substrate substantially constant during operation of said
reactor
2. The reactor of claim 1 in which all walls of said reaction
chamber are formed from said heat transparent material.
3. The reactor of claim 1 in which said heat source comprises at
least one high intensity lamp which radiates heat energy having a
wave length of approximately 1 micron or below.
4. The reactor of claim 3 in which said reaction chamber comprises
a quartz enclosure separating said heat source from said substrate,
the walls of said enclosure being generally unobstructive of heat
energy radiated at said wave length.
5. The reactor of claim 1 in which said susceptor means further
includes
3. structure for moving said susceptor body relative to said heat
source to insure substantially uniform heating of said susceptor
body and the substrate supported thereby.
6. The reactor of claim 1, which further includes
means for cooling said radiant heat source.
7. The reactor of claim 1 in which said radiant heat source
comprises a high intensity tungsten filament quartz lamp which
generates heat energy having a wave length of approximately one
micron or below.
8. The reactor of claim 1 in which said radiant heat source
comprises a bank of high intensity tungsten filament quartz lamps,
each of which generates heat energy having a wave length of
approximately one micron or below.
9. The reactor of claim 1 in which said susceptor means is
separable from said reaction chamber so that said substrate may be
positioned on said susceptor body outside said reaction chamber and
thereafter introduced on said susceptor body into said reaction
chamber.
Description
BACKGROUND OF THE INVENTION
Field of the invention
This invention relates to the field of vapor deposition of films on
substrates. More particularly, the field of this invention involves
the vapor deposition of expitaxial films, for example silicon
dioxide and like films, on exposed surfaces of articles, such as
silicon wafer substrates commonly used in the electronics industry.
Gaseous chemical reactants are brought into contact with a heated
substrate within a reaction chamber the walls of which are
transparent to radiant heat energy transmitted at a predetermined
short wave length. A suspector, which absorbs energy at the
wavelength chosen, supports the substrate to be coated and heats
the same as a result of its absorption of the heat energy
transmitted into the reaction chamber from the radiant heat source
employed.
Description of the Prior Art
While substrates, such as silicon wafers, have been coated
heretofore with epitaxial films, such as silicon dioxide or like
films, so far as is known, the specific and improved vapor
deposition procedure and apparatus disclosed herein are novel. The
apparatus and process of this invention are effective to produce
uniform film coatings on substrates under controlled conditions so
that coasted substrates of high quality and excellent film
thickness uniformity are producible within closely controlled
limits.
In chemical deposition systems, it is highly desirable to carry out
the deposition reaction in a cold wall-type reaction chamber. By
maintaining the reaction chamber walls in the unheated state, such
walls received little or no film deposition during substrate
coating. Cold wall systems are additionally desirable because they
permit the deposition of high purity films, such as silicon dioxide
films. Impurities can be evolved from or permeate through heated
reaction chamber walls. Because such impurities would interfere
with and adversely affect the purity of the substrate coating, cold
wall reaction chambers are employed to preclude such impurity
evolution or permeation.
To avoid such problems, chemical deposition processes have been
developed heretofore which permit heating of a substrate positioned
within a reaction chamber without simultaneously heating the
reaction chamber walls. Heretofore, the most successful of such
processes involved the use of radio frequency (RF) induction
heating of a conducting susceptor positioned within the reaction
chamber, the walls of which were formed of non-conducting or
insulating material. For example, RF heating of a graphite
susceptor within a quartz reaction chamber for depositing epitaxial
silicon films has been known generally heretofore.
However, such an RF heating technique, while it generally produces
the stated objective in a cold wall reaction chamber, has several
inherent and important disadvantages which make the same
undesirable under many circumstances. For example, an expensive and
bulky RF generator is required which is very space consuming and
which must be located close to the epitaxial reactor. Also, the
high voltages required with the RF coils produce substantial
personnel hazards, and RF radiation from the RF coils can and
frequently does interfere with adjacent electrical equipment.
Furthermore, such an RF procedure requires the utilization of an
electrically conducting susceptor for supporting the substrates to
be heated. Also, RF systems are considerably more expensive overall
than the simplified radiation heated system disclosed herein which
were designed to replace the RF systems utilized heretofore.
SUMMARY OF THE INVENTION
This invention relates generally to an improved procedure for
coating a substrate with an epitaxial film and to an improved
apparatus for effecting such procedure. More particularly, this
invention relates to a vapor deposition apparatus and process for
depositing an oxide, nitride, metal or other similar films in
epitaxial fashion on a substrate, such as on a silicon wafer
commonly employed in the electronics industry in the manufacture of
integrated circuits, transistors and the like. Still more
particularly this invention relates to a cold wall epitaxial
reactor and process for coating substrates without utilizing radio
frequency induction heating of the type heretofore employed in cold
wall vapor deposition systems.
In the subject procedure, a reaction zone, defined by an enclosed
reaction chamber the walls of which are formed from a predetermined
material specially selected for use in the reaction, has one or
more substrates to be epitaxially coated positioned therein. In the
preferred embodiment, a susceptor is utilized to support the
substrates in the reaction chamber. A gaseous chemical mixture,
composed of one or more suitable reactants, is introduced into the
the reaction chamber into contact with the heated substrates. Such
substrates are heated from a radiant non-RF heat source without
simultaneously heating the walls of the reaction chamber so that
the substrates become coated with the epitaxial reactant material
while the walls remain uncoated.
Disadvantages inherent with prior known RF induction heated systems
are overcome with the more compact radiation heated system of this
invention which transmits heat from a radiation heat source
positioned outside the reaction chamber. The frequencies of the
radiated heat energy and of the material from which the reactor
walls are formed are selected so that the radiant heat energy is
transmitted at a wave length which passes through the walls of the
reaction chamber without being absorbed by the same so that the
walls remain cool and essentially unheated.
When the substrates to be coated are suitably heated by the energy
absorbed by the susceptor, a gaseous reactant mixture is introduced
into the reaction chamber into contact with the substrates to
effect epitaxial coating thereof in known fashion. In that regard,
any of the gaseous chemical reactants commonly used in epitaxial
coating procedures may be employed with the present invention.
An improved heat source preferably employed with the present system
comprises a high intensity, high temperature lamp which operates at
a filament temperature in the range of 5000.degree. to 6000.degree.
F., by way of example. The lamp actually chosen is selected from
the type which produces radiant heat energy in the short wave
length range, preferably approximately 1 micron or below. Radiant
energy in such short wave lengths passes through materials found
suitable for defining the walls of the reaction chamber, of which
quartz is preferred. Quartz walls possess excellent radiant energy
transmission characteristics at the wave length noted so that
little or no radiation is absorbed by the walls, thus retaining the
advantages of cool wall reaction system noted previously.
From the foregoing it should be understood that objects of this
invention include the provision of an improved cold wall process
for epitaxially coating a substrate with a film of a predetermined
type; the provision of a gaseous deposition apparatus for vapor
depositing an epitaxial film on a heated substrate; the provision
of improved apparatus and process for epitaxially coating
substrates by employing a radiant energy heat source which
transmits heat energy in short wave lengths through the walls of a
reaction chamber which are transparent and nonobstructive to such
energy at the wave length chosen; the provision of an improved
apparatus and method which utilizes an opaque susceptor for heating
substrates supported thereon within a reaction chamber, the walls
of which are defined by a material which is transparent to radiant
heat energy while the susceptor is opaque to and absorbs such heat
energy so that heating of this susceptor is effected; and the
provision in a radiation heated reactor of a heat source defined by
one or more high intensity lamps which transmit radiant energy at a
shortwave length which readily passes through without heating a
reactor chamber wall.
These and other objects of this invention will become apparent from
a study of the following description in which reference is directed
to the attached drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a longitudinal sectional view, largely schematic in
nature, through one embodiment of the subject apparatus.
FIG. 2 is a vertical sectional view through the apparatus taken in
the plane of line 2--2 of FIG. 1.
FIG. 3 is a vertical sectional view corresponding generally to FIG.
2 showing a modified embodiment of the subject apparatus.
FIG. 4 is a vertical sectional view through another modified
embodiment of the apparatus.
FIG. 5 is an isometric view of a portion of the apparatus of FIG.
4.
FIG. 6 is a vertical sectional view through a further modification
of the apparatus.
FIG. 7 is a sectional view taken in the plane of line 7--7 of FIG.
6.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
Several embodiments of apparatus designed to carry out the improved
epitaxial deposition procedure of this invention are disclosed
herein. Each of such embodiments employs the same basic concepts
characteristic of the improved features of this invention, namely
the utilization of a cold wall reaction chamber in which a
substrate to be epitaxially coated is positioned, preferably upon a
susceptor which is opaque and absorbs radiant heat energy
transmitted through the walls of the reaction chamber without
absorption by such walls. The source for such radiant heat
comprises a high intensity lamp, or bank of such lamps, which
produces and transmits high temperature heat energy at a wave
length which is not interferred with by the walls of the reaction
chamber.
The chemical epitaxial deposition procedure within the reaction
chamber is essentially the same as that employed heretofore with
known coating procedures. Therefore, only brief reference herein is
directed to the concepts of epitaxial film growth which are well
known and understood in the chemical vapor deposition art. By way
of introductory example, however, the apparatus and process of this
invention are utilizable to produce various epitaxial films on
substrates, such as silicon wafers. The system of this invention
employs chemical reaction and/or thermal pyrolysis to deposit a
variety of films, such as silicon, silicon nitride, and silicon
dioxide, as well as metal films such as molybdenum, titanium,
zirconium and aluminum in accordance with reactions such as the
following:
Silicon epitaxial growth by silane or silicon
tetrachloridepyrolysis at temperatures within the range of
900.degree.-1200.degree. C. occurs as follows; ##SPC1##
Silicon nitride deposition may be effected at temperatures in the
range of 600.degree. to 1100.degree. C. in accordance with reaction
such as the following;
3SiH.sub.4 + 4NA.sub.3 Si.sub.3 N.sub.4 +12H.sub.2 3SiCl.sub.4
+4NH.sub.3 Si.sub.3 N.sub.4 +12HCl
Deposition of silicon dioxide from silane or silicon tetrachloride
may be effected in accordance with the following reaction at
temperatures of 800.degree. to 1100.degree. C.;
SiH.sub.4 +H.sub.2 +2CO.sub.2 SiO.sub.2 +3H.sub.2 +2CO
SiCl.sub.4 +2H.sub.2 +2CO.sub.2 SiO.sub.2 +4HCl+2CO
At somewhat lower temperatures, silicon dioxide deposition from
silane oxidation in the range of 300.degree. to 500.degree. C. may
be effected as follows;
SiH.sub.4 +O.sub.2 SiO.sub.2 +2H.sub.2
Also, metal deposition at temperatures in the range of 900.degree.
to 1200.degree. C. can be produced in accordance with the following
exemplary reaction:
2MoCl.sub.5 +5H.sub.2 2Mo+10HCl
Corresponding reactions for producing other exemplary metal and
non-metal films as noted above also can be employed in accordance
with known procedures. The above reactions are intended as examples
of procedures for which a cold wall deposition system is highly
effective and alternative uses of such a system by those skilled in
the chemical deposition art will become apparent from the following
detailed description. Apparatus of the type described herein has
been effectively used for producing silicon nitride and silicon
dioxide dielectric films with film thickness uniformity of .+-.5
percent from wafer to wafer within a run. Highly effective results
can be insured because operating temperatures can be closely
controlled and uniformly held due to use of the novel heat source
employed herewith.
Referring first to the apparatus embodiment shown in FIGS. 1 and 2,
it should be understood that the reactor structure is shown in
generally schematic fashion and is intended to be enclosed within a
surrounding enclosure (not shown) in and on which the necessary
gaseous reactant flow controls, electrical power sources, and other
attendant mechanisms are intended to be housed and mounted. For
purposes of clarity of illustration, only those portions of the
reactor necessary to illustrate the inventive concepts disclosed
herein have been shown in the drawings. It will be understood that
those portions of the reactor illustrated are intended to be
supported within the aforementioned enclosure in any suitable
fashion.
The radiation heated reactor of FIGS. 1 and 2, generally designated
1 comprises an elongated housing generally designated 2 defined as
best seen in FIG. 2 by opposed sidewalls 3 and 4 and a removable
top closure 6, the latter being slidable along or otherwise
separable from the upper margin of the sidewalls 3 and 4 to permit
access to the hollow interior 7 of the housing. Opposite ends of
the housing, designated 8 and 9, may be closed off in any suitable
fashion, such as by employing end walls or the like so that the
interior 7 of the housing is completely enclosed. However, access
into the hollow interior through one end of the housing is
necessary so that substrates to be coated can be loaded and
unloaded therefrom prior to and following deposition coating
thereof. Suitable access doors (not shown) may be provided in the
end wall 9 of the housing and in the reaction chamber to be
described so that such access may be had to the reaction
chamber.
Preferably the inner surfaces 11 of each of the confining walls of
the housing and of the top closure thereof are formed of a highly
polished reflecting material, such as polished sheet aluminum. Such
reflecting surfaces are provided to permit maximum utilization of
the heat generated by the heat source to be described.
Such heat source is designated 12 and extends laterally across the
housing as seen in FIG. 2 and is secured in position by fastening
the same to suitable portions of the housing sidewalls. The heat
source comprises at least one high intensity lamp capable of
producing and transmitting radiant heat energy at a short wave
length, preferably one which is approximately 1 micron or less.
In the embodiment illustrated, the heat source comprises a bank of
such lamps, each designated 13, which are mounted in threaded
sockets 14 in a pair of side by side lamp mounting blocks 16. The
electrical connections for the lamps are not illustrated but such
connections are conventional. The upper open end of each lamp
socket 14 is formed as an enlarged semispherical recess 17 which is
highly polished to serve as a reflecting surface for the purpose
noted.
The lamps preferably employed with the present apparatus and those
illustrated in the drawings are high intensity tungsten filament
lamps having a transparent quartz envelope and a halogen gas
contained therein, preferably iodine. Such lamps are manufactured
by the Aerometrics Division of Aerojet-General Corporation. Similar
lamps are produced by General Electric Corporation.
The lamp employed in the embodiment of FIGS. 1 and 2 is constructed
to be mounted upright but in another embodiment to be described
hereinafter another configuration may be utilized.
Because of the substantial temperatures at which such lamps operate
e.g., 5000.degree.-6000.degree. F., means are provided in
conjunction with the housing and with the lamp mounting blocks to
cool the housing walls and the areas surrounding the lamp sockets
to prevent overheating of the apparatus. As noted best from FIG. 2,
such cooling means for the walls includes a plurality of parallel
cooling fluid conduits 20 through which water or a like cooling
medium is circulated. Similar cooling conduits 18 are provided in
the top closure of the housing. Such conduits may be operatively
connected with a supply of cooling fluid and a disposal system
therefor in known fashion.
Also, preferably, fluid cooling conduits 19 are provided between
adjacent rows of the bank of high intensity lamps as seen best in
FIG. 2. Such conduits 19 are similarly connected with the supply of
the cooling medium employed and a disposal system therefor.
The cooling means also preferably includes air circulation means
which in the embodiment shown comprises a pair of adjacent cooling
air plenum chambers 21 and 22 extending through the lamp mounting
blocks 16 adjacent the base thereof. Such plenum chambers are
operatively connected directly with the sockets 14 in which the
lamps are received as well as with other vertically and laterally
extending channels 23 which similarly extend longitudinally of the
lamp mounting blocks. Thus, cooling air if forced to circulate
around the lamps and through the hollow interior 7 of the housing
for subsequent discharge through an exhaust port 25 in
communication with an exhaust system (not shown).
Positioned within the hollow interior of the housing is a structure
which defines the reaction zone of the present apparatus in which
the epitaxial coatings are deposited on substrates positioned
therein. Such reaction zone is generally designated 31 and
comprises a reaction chamber defined by an elongated generally
enclosed tubular structure selectively formed from a material which
is transparent to the short wave length heat energy generated by
the heat source 12 previously described. In its preferred form,
such reaction chamber has its walls formed from quartz which is
transparent to radiation energy in the one micron and below range.
The tube is generally rectangular in cross-sectional construction
and the dimensions thereof may vary according to particular
production needs. However, one such tube having dimensions of 2
inches by 6 inches with the length being determined in accordance
with production requirements may be employed.
As seen in FIG. 1, one end of the reaction tube is operatively
connected at 24 with an exhaust hood 26 which in turn is connected
with the aforementioned exhaust system so that spent reaction gases
may be withdrawn from the the reactor. At its opposite ends, the
gaseous reactants to be employed in the coating procedure are
introduced into the reaction chamber through means which, in the
embodiment illustrated, comprises a pair of conduits 32 and 33
which pass through a portion 34 of the end wall 8 of the reactor
and terminate within a mixing chamber 36 defined by a baffle plate
37 and the end wall portion 34. The gaseous reactants emanate from
tube 32 through a series of openings 38 provided therein adjacent
the baffle plate while the end 39 of the other tube 32 is open
directly into the mixing chamber. Following thorough mixing of the
various reactants in the mixing chamber, the same pass beneath the
baffle plate through a slotted passageway 41 provided therebetween
and the bottom wall of the reaction chamber as seen in FIG. 1. It
should be understood, of course, that the particular means chosen
for introducing the gaseous reactants into the reaction chamber may
be varied to meet particular manufacturing and production
requirements.
Supported within the reaction chamber in the preferred embodiment
shown is an elongated slablike susceptor 42 on which a series of
silicon or like wafers 43 are supported in spaced relationship. The
size of the susceptor is correlated to the size of the quartz
reaction chamber and may vary to meet particular commercial needs.
It should also be understood that in commercial reactors, more than
one reactor station may be provided so that treatment of one batch
of wafers in one reaction chamber may be progressing while another
reaction chamber is being loaded or unloaded.
Preferably susceptor 42 is supported above the bottom wall of the
reaction chamber and for that purpose a supporting stand of any
suitable construction may be provided, such as the elongated
H-shaped stand 44 illustrated in FIG. 2. Preferably such a stand is
transparent to the radiant energy emitted by the heat source and as
such may be formed of quartz. While it is a requirement that the
susceptor material employed be opaque to the radiant energy emitted
from the heat source, various materials may be employed in that
regard. In the preferred embodiment, such susceptor preferably is
produced from graphite which readily absorbs radiant heat energy at
the short wave length noted. However, it is not a requirement that
the susceptor be electrically or thermally conducted. By utilizing
a susceptor, uniform heating of the wafers positioned thereon is
insured.
In certain embodiments of this apparatus it is visualized that the
wafers may be directly heated in the reaction chamber without a
susceptor by supporting the wafers directly on the bottom wall of
the chamber. However, such a procedure is less desirable but,
because of the opaque nature of the wafers, such a procedure will
produce acceptable results although utilization of a susceptor as
noted is highly preferable.
The reaction chamber 31 may be supported in any suitable fashion
within the housing. In the generally schematically embodiment
shown, a series of projecting supports, designated 46, are
positioned at intervals along the length of the reactor as best
seen in FIG. 2 and the reaction chamber rests upon such supports.
Such supports may be formed from quartz to prevent their
interferring with effective heat transmission.
The alternate embodiment shown in FIG. 3 is in all important
respects the same as that described previously in FIGS. 1 and 2
with modifications being evident in conjunction with the heat
source, generally designated 51, in FIG. 3. Such heat source
comprises at least one and preferably a bank of high intensity
lamps 52 which generate radiant heat energy of the type described
previously. However, the individual lamps 52 differ from those
lamps 13 described previously in that each comprises an elongated
tubular configuration which extends through opposite sidewalls
thereof to be received within opposite spring mounting means 53 and
54 each defined by a socket 56 in which an end of the lamp is
positioned. A pair of springs 57 and 58 are suitably anchored at 59
and 61 in brackets secured to a housing wall. The electrical
connections for the lamps 52 have not been illustrated but such
connections are of conventional construction.
It should be understood that a series of such lamps 52 are mounted
as noted in generally parallel relationship and extend at spaced
intervals across the housing at longitudinally spaced positions
therealong.
Cooling water and cooling air means are provided for the purposes
noted previously. The cooling water conduits 18 and 20 are arranged
essentially the same as described previously with respect to FIG.
2. However, some modification in the cooling air arrangement is
necessitated because of the different construction of the lamps 52.
In that regard, an enlarged plenum chamber 62 extends along the
base of the housing and a series of air passages 63 extend through
the bottom wall 64 of the housing defined by a polished metal plate
so that cooling air my pass upwardly around the respective lamps
and pass from the hollow interior of the housing into the exhaust
system in the manner noted previously.
Lamps of the type shown at 52 are produced by General Electric as
illustrated in their brochure No. TP-110 entitled "Incandescent
Lamps" and marketed under the trademark "Quartzline."
FIGS. 4 and 5 illustrate a further modification of the subject
radiation heated reactor in which the reactor construction is
substantially different from that described previously but in which
the epitaxial coating procedure corresponds to that described
previously. As seen in FIG. 4, the reactor includes a support 66 to
be positioned within and supported within a housing enclosure (not
shown). The heat source, generally designated 67, in this
embodiment comprises a cylindrical lamp mounting block 68 having a
hollow interior 69 as best seen in FIG. 5. In the upper surface of
the lamp mounting block are a series of semispherical recesses 71
in which high intensity lamps 70 of the type shown and described
previously with respect to FIG. 1 are positioned.
The number of lamps 70 chosen depends upon the scope of the
commercial operation intended for the reactor. It should be
understood that suitable socket openings communicate with the
semispherical recesses to accommodate the lamps therein in
generally the same manner as shown in FIG. 1. The upper surface 72
of the lamp mounting block, as well as the surfaces of the socket
recesses 71 are highly polished so as to be highly heat
reflective.
The lamp mounting block is supported above the support plate 66 in
any suitable fashion. In that regard, conduits 73 and 74 are
spacedly secured to the base of the lamp mounting block and pass
through the support plate 66 and are rigidly connected with the
support plate so as to position the lamp mounting block above the
support plate as noted in FIG. 4. The respective conduits 73 and 74
provide water cooling inlets an outlets which communicate with
internal circulating channels 75 formed within the mounting block.
Although not shown, if desired, air cooling means may be provided
in conjunction with the respective lamp sockets also, in the
fashion described herein previously.
The reaction chamber of this embodiment is defined by an outer bell
jar 76 of conventional configuration and construction which rests
upon the supporting plate 66 and completely encloses the heat
source and the remaining reactor structure to be described. The
inner portion of the reaction chamber is defined by a quartz shroud
77 which is hollow cylindrical in configuration, and donut shaped
so that an inner portion 78 thereof fits within the bore 69 of the
lamp mounting block as best seen in FIG. 4. Thus, the shroud
completely separates the lamps and the lamp mounting block and
associated structure from the hollow interior of the reaction
chamber defined by the shroud and the surrounding bell jar.
This embodiment also uses an opaque susceptor of graphite or the
like and such susceptor is in the form of a circular ring plate 81
secured in any suitable fashion to and supported by a hollow shaft
82 which projects upwardly through the support plate 66 of the
reactor as seen in FIG. 4. Shaft 82 is rotatable at relatively slow
speeds (e.g., 10 to 15 revolutions per minute) by means of any
suitable gearing or motor drive (not shown) so that the susceptor
and a supply of wafers 83 supported thereon are carried in a moving
path above the heat source defined by the bank of lamps shown. The
purpose of such movement relative to the heat source is to insure
uniform heating of the susceptor and the wafers carried thereby.
Access to the susceptor is had by lifting the bell jar.
The hollow shaft 82 further defines conduit means for introducing
gaseous reactants into the reaction chamber for epitaxial reaction
therein with the wafers 83. The spent reaction gases pass from the
reaction chamber through a vent port 84 provided in the support
plate 66 from which they pass into any suitable exhaust system (not
shown).
A further embodiment of the subject radiation heated reactor is
illustrated in FIGS. 6 and 7. Such arrangement comprises a
supporting plate 91 which is mounted within an enclosure (not
shown) in any suitable manner. Projecting upwardly through the
supporting plate 91 is a shaft 92 designed to be rotated by any
suitable means (not shown).
Supported upon the upper end of shaft 92 is a generally cylindrical
opaque susceptor of graphite or the like, designated 93. As seen in
FIG. 7, the outer periphery of the susceptor is provided with a
series of recesses 94 in which wafers to be epitaxially coated are
positioned in generally vertical orientation. The inner wall 97
(FIG. 7) of each recess is inwardly inclined away from the vertical
to insure retention of a wafer therein during rotation of the
susceptor. In that regard, relatively slow rotation in the range of
approximately 10 to 15 revolutions per minute is utilized. Rotation
of the susceptor is provided to insure uniform heating of the
susceptor by the heat source.
With this embodiment, the reaction chamber is defined by a quartz
bell jar 98 of conventional construction and configuration which
surrounds the susceptor and rests on the supporting plate 91 as
seen in FIG. 6. Access to the susceptor is had by raising the bell
jar.
The heat source, generally designated 99, employed in this
embodiment comprises a cylindrical ring-shaped lamp mounting block
101 in which a series of high intensity lamps 102 are positioned in
vertically spaced rows in the manner shown. The semispherical
sockets from which the lamps project and inner periphery of the
lamp block 101 are highly polished for the purpose noted
previously.
Thus, the illustrated lamp bank surrounds the susceptor and is
operatively separated therefrom by the reaction chamber defined by
the bell jar 98. The lamp block 101 is provided with means for
cooling the same in the form of a helical coil 103 which surrounds
the same through which a cooling fluid such as water may enter at
one end 104 thereof and exit at the other end 106 thereof. Cooling
air also may be introduced through the lamp mounting block if
desired.
The gaseous reactants are introduced through a suitable port
structure 107 provided in plate 91 and the spend reaction gases
exit from the reaction chamber through a port structure 108 for
passage into a suitable exhaust system.
Having thus made a full disclosure of various embodiments of
improved apparatus and process for epitaxially coating substrates,
reference is directed to the appended claims for the scope of
protection to be afforded thereto.
* * * * *