U.S. patent number 3,620,957 [Application Number 04/830,813] was granted by the patent office on 1971-11-16 for targets for radio frequency sputtering apparatus.
This patent grant is currently assigned to Edwards High Vacuum International Limited, Crawley. Invention is credited to Colin Richard Douglas Priestland, Geoffrey Norman Jackson, John Arthur Alfred Emery.
United States Patent |
3,620,957 |
|
November 16, 1971 |
TARGETS FOR RADIO FREQUENCY SPUTTERING APPARATUS
Abstract
A target arrangement for use in radio frequency sputtering
techniques in which a metal electrode has clamped to it a
dielectric cover which carries target material to be sputtered.
Inventors: |
John Arthur Alfred Emery
(Crawley, GB2), Geoffrey Norman Jackson (Great Bookham,
GB2), Colin Richard Douglas Priestland (Horsham, GB2) |
Assignee: |
Edwards High Vacuum International
Limited, Crawley, (N/A)
|
Family
ID: |
10267607 |
Appl.
No.: |
04/830,813 |
Filed: |
June 5, 1969 |
Foreign Application Priority Data
|
|
|
|
|
Jun 12, 1968 [GB3] |
|
|
27,932/68 |
|
Current U.S.
Class: |
204/298.12;
204/298.09 |
Current CPC
Class: |
C23C
14/3407 (20130101) |
Current International
Class: |
C23C
14/34 (20060101); C23c 015/00 () |
Field of
Search: |
;204/192,298 |
References Cited
[Referenced By]
U.S. Patent Documents
Other References
Davidse, "Theory & Practice of RF Sputtering," Vacuum, Vol. 17.
No. 3. .
pg. 139-145.
|
Primary Examiner: John H. Mack
Assistant Examiner: Sidney S. Kanter
Attorney, Agent or Firm: Hall & Houghton
Claims
1. A target for use in radio frequency sputtering apparatus
including in combination: a. a first member of silica, said member
having a first surface and a second surface; b. a second member of
a nickel iron alloy having a third surface and a fourth surface;
and c. a third member of target material to be sputtered having a
fifth surface, said third surface being bonded to said second
surface and said fifth surface being bonded to said fourth surface;
and in which said nickel iron alloy has the thermal property that
its molecular structure takes up any differential expansion between
said first member and said
2. A target as claimed in claim 1, including a thermally conductive
copper
3. A target arrangement including a target as claimed in claim 1
and a water-cooled copper electrode to which said target is
clamped.
Description
This invention relates to target arrangements for use in radio
frequency sputtering apparatus.
There are a number of methods of depositing films under vacuum, the
most commonly used being various vacuum thermal evaporation and
sputtering techniques. Of these techniques sputtering has a number
of advantages over vacuum evaporation as a method of final
deposition. These advantages include the ease of coating relatively
large areas of a stationary substrate, the simultaneous coating of
the front surface and the edges of a substrate, the ability to
deposit certain substances in a crystalline form, the possibility
of depositing compound substances using, for instance, multiple
cathodes when such substances would decompose during evaporation,
and the possibility of forging compounds with selected
environmental gases. The advantages are common to all types of
sputtering methods including in particular radio frequency
sputtering techniques.
According to the present invention a target arrangement for use in
radio frequency sputtering apparatus includes a metal electrode, a
dielectric cover for at least one surface of the electrode and a
layer of material carried by the cover, said layer being the target
material to be sputtered.
Preferably the dielectric cover is silica or alumina whilst the
material to be sputtered may comprise either a conductor, a
semiconductor or an insulator as desired.
The layer of material to be sputtered may be deposited on the cover
by a spraying process, such as plasma spraying. Alternatively it
may be applied by vacuum evaporation.
In a preferred arrangement a metal alloy is interposed between the
dielectric cover and the layer of material to be sputtered, the
alloy having such thermal properties that its molecular structure
takes up any differential expansion between the dielectric cover
and the material to be sputtered. In such a case the layer of
material to be sputtered may be relatively thick and is suitably
vacuum brazed to the alloy which is itself brazed to the dielectric
cover.
In carrying out the invention, the dielectric cover should
preferably be resistant to thermal expansion effects throughout the
range to which the target would be subjected in use. Thus, it
should, typically, withstand a temperature of about 30.degree. C.
on its surface in contact with the metal electrode while its outer
surface is heated, nonuniformly, at heat dissipation levels between
0 and 20 watts cm..sup..sup.-2. It is also preferred that it be
mechanically satisfactory for normal handling and not susceptible
to accidental breakage from minor shocks. For instance, the cover
must be sufficiently strong to withstand the forces involved if it
is clamped at the edge so that the back surface is maintained in
contact with the metal, normally copper, electrode. Silica and
alumina, as mentioned above, fulfills these requirements and are
relatively inexpensive.
As is usual in RF sputtering techniques, the target will have to be
shielded in use against unwanted discharges. In other words there
must be no low resistance path between, for instance, the plasma
ion source and the metal electrode or, if the plasma is self
generated between two target electrodes, between the metal
electrodes and any other part of the apparatus. The dielectric
cover could cover all the exposed surfaces of the metal electrode
but this is not necessary as long as suitable shielding is
provided. One shielding technique is described in the specification
of the Assignees' U.S. Pat. No. 3,558,467.
The dielectric cover need not normally exceed one quarter inch in
thickness and it may be much thinner if the target material which
is to be deposited on it is thick and a good insulator. Silica
fulfills all the requirements mentioned for a suitable dielectric
cover. To ensure a good heat exchanging relationship with the
electrode the silica cover may be provided with a thin surface
layer of thermally conductive material, suitably of the same
material as the electrode and vacuum evaporated onto the
silica.
The exposed surface of the cover which is to face the bombarding
ions is covered by a layer of the material to be sputtered. If the
layer is to be a metal it may be suitably applied to the cover by
metal spraying. The spraying of any suitable metal powder which
does not decompose is preferred, aluminum being an example.
When the layer is applied by evaporation such substances as gold
and silver are suitable.
A preferred embodiment of the invention will now be described, by
way of example, with reference to the accompanying drawing in
which:
FIG. 1 is a side elevation of a target arrangement constructed in
accordance with the invention; and
FIG. 2 is a plan view of the arrangement shown in FIG. 1.
Referring now to the drawing, the target arrangement is provided
with a disc-shaped water cooled copper electrode 1, the water
cooling being shown diagrammatically by the water inlet 2 and
outlet 3. This electrode is one separate part of the arrangement,
the remaining part 4 being a composite part which basically
comprises a silica disc 5 (the dielectric cover) and a layer 6 of
material to be sputtered, this material being a metal, a
semiconductor or an insulator as required. The part 4 is clamped by
three L-clamps 9, indicated only in FIG. 2, to the electrode 1.
In order to optimize the durability of the arrangement it is
important that there should be a compatible temperature gradient
during use between the upper face of the layer 6 of material to be
sputtered and the electrode. It is, therefore, desirable to ensure
good thermal contact between the electrode 1 and the silica disc 5,
this being achieved by the provision of a vacuum evaporated copper
layer 7 on the lower face of the silica disc. Any movement between
the disc 5 and the electrode 1 due, for example, to differential
thermal expansion effects is taken up without subjecting the silica
to undue stresses by ensuring that the clamps 9 only maintain a
slight pressure (finger pressure) between electrode 1 and part 4.
However, there is a permanent bond between the silica disc 5 and
the layer 6 of material to be sputtered and it has also to be
ensured that there are no undue stresses on the silica due to
differential expansion effects in this region. This is achieved by
vacuum brazing a disc 8 of nickel iron alloy (kovar) to the upper
surface of the silica disc 5 and then vacuum brazing the layer 6 to
the kovar disc. This alloy has such a structure that it takes up
any differential movement when subjected to thermal strains.
The electrode 1 will, of course, be provided with suitable earth
shielding over the regions not covered by the part 4.
The arrangement described is particularly strong and by brazing the
layer 6 to the part 4 a thicker layer can be used than when it is
sprayed onto the silica disc. The arrangement is therefore suitable
for continuous long life sputtering. Moreover, this arrangement is
preferred because the layer 6 may be a pure piece of material
whilst layers which are plasma sprayed tend to take up impurities,
such as oxides, during deposition.
All target arrangements of the present invention may be used in any
orientation and, when constructed as described from the preferred
types of material, are relatively strong mechanically.
* * * * *