U.S. patent number 3,617,391 [Application Number 04/857,859] was granted by the patent office on 1971-11-02 for method for producing passivated pn-junctions by ion beam implantation.
This patent grant is currently assigned to Bell Telephone Laboratories, Incorporated. Invention is credited to Martin P. Lepselter, Herbert A. Waggener.
United States Patent |
3,617,391 |
Lepselter , et al. |
November 2, 1971 |
METHOD FOR PRODUCING PASSIVATED PN-JUNCTIONS BY ION BEAM
IMPLANTATION
Abstract
A method for producing tucked under, passivated PN-junctions in
semiconductor devices by ion implantation through a layered mask.
Apertures in the upper layers of the mask are formed somewhat
larger than the corresponding apertures in a first layer
(contiguous with the surface of the semiconductor) so that an
annulus of uncovered first layer remains around each exposed
portion of semiconductor surface. Then the structure is subjected
to a beam of dopant ions of sufficient energy to pass through the
exposed annulus of uncovered first layer but of insufficient energy
to pass through the area covered by the multiple layers; and a
tucked under, passivated junction thereby is formed.
Inventors: |
Lepselter; Martin P. (New
Providence, NJ), Waggener; Herbert A. (Allentown, PA) |
Assignee: |
Bell Telephone Laboratories,
Incorporated (Murray Hill, Berkeley Heights, NJ)
|
Family
ID: |
25326877 |
Appl.
No.: |
04/857,859 |
Filed: |
September 15, 1969 |
Current U.S.
Class: |
438/526;
148/DIG.106; 148/DIG.43; 438/531 |
Current CPC
Class: |
H01L
23/291 (20130101); H01L 23/29 (20130101); H01L
21/00 (20130101); Y10S 148/043 (20130101); H01L
2924/0002 (20130101); H01L 2924/0002 (20130101); Y10S
148/106 (20130101); H01L 2924/00 (20130101) |
Current International
Class: |
H01L
23/29 (20060101); H01L 23/28 (20060101); H01L
21/00 (20060101); H01l 007/54 () |
Field of
Search: |
;148/1.5,186,187
;29/576 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Rutledge; L. Dewayne
Assistant Examiner: Lester; R. A.
Claims
What is claimed is:
1. A method of forming by ion implantation a localized zone in a
semiconductive body comprising the steps of:
forming a mask on a surface of the body, said mask comprising a
first layer contiguous with the surface of the body and a second
body overlying the first; both layers having registered apertures
therein through which a portion of the surface of the body is
exposed; the aperture in the second layer being larger than the
aperture in the first layer so that an annulus of material in the
first layer around the perimeter of the aperture in the first layer
is not covered by the second layer; and
subjecting the structure to a beam of dopant ions having energy
sufficient to penetrate the uncovered material of the first layer
and sufficient to alter the semiconductivity of the semiconductor
thereunder but insufficient to penetrate completely the regions in
which the second layer overlies the first.
2. A method of forming by ion implantation a localized zone in a
semiconductive body comprising the steps of:
applying first coating of a first material to the surface of the
body;
applying a second coating of a second material over said first
coating;
removing selected portions of said second material so that an
aperture is formed in the second coating and a portion of the first
coating thereby is uncovered;
removing selectively the uncovered portion of the first coating so
that a portion of the semiconductor surface thereby is
uncovered;
enlarging the aperture in the second coating so that an annulus of
the material of the first coating is left uncovered around the
perimeter of the aperture in the first coating; and
subjecting the structure to a beam of dopant ions having energy
sufficient to penetrate the uncovered portion of the first coating
and sufficient to alter the semiconductivity of the semiconductor
thereunder but insufficient to penetrate completely the regions in
which the second coating overlies the first.
3. A method as recited in claim 2 wherein the first coating
includes silicon oxide and the second coating includes a material
selected form the group consisting of aluminum oxide and silicon
nitride.
4. A method of forming by ion implantation a localized zone in a
semiconductive body comprising the steps of:
applying a first coating of a first material to the surface of the
body;
applying a second coating of a second material over said first
coating;
removing selected portions of said second material by exposing
selected regions of the second coating to an ambient which causes
removal of the second material much faster than the first material
so that an aperture is formed in the second coating and a portion
of the first coating thereby is uncovered.
exposing the structure to an ambient which causes the removal of
the first material much faster than the second material so that an
aperture is formed in the first material underneath the aperture in
the second material and a portion of the semiconductor surface
thereby is uncovered;
exposing the structure to an ambient which causes removal of the
second material much faster than the first material so that the
second coating is thinned and the aperture in the second coating is
enlarged so that an annulus of uncovered first material is left
around the perimeter of the aperture in the first coating; and
subjecting the structure to a beam of dopant ions having energy
sufficient to penetrate the uncovered portion of the first material
but not sufficient to penetrate the covered portion of the first
material.
5. A method as recited in claim 4 wherein the first material is
silicon oxide and the second material is aluminum oxide.
6. A method as recited in claim 5 wherein phosphoric acid is used
to etch the aluminum oxide and hydrofluoric acid is used to etch
the silicon oxide.
7. A method of forming by ion implantation a localized zone in a
semiconductor body comprising the steps of:
applying a first coating of a first material to the surface of the
body;
applying a second coating of the second material over said first
coating;
applying a third coating of a third material over said second
coating;
removing selected portions of said third material by exposing
selected regions of said third coating to a solution which etches
said third material much faster than said second material, so that
an aperture is created in the third coating and a portion of the
upper surface of the second coating thereby is uncovered;
removing the uncovered portion of the second material by exposing
that portion of the second material to a solution which etches said
second material much faster than either said third material or said
first material, so that an aperture is created in the second
coating and a portion of the upper surface of the fist coating
thereby is uncovered;
removing the uncovered portion of the first material and the entire
remaining portions of the third material by exposing that portion
of the third material and those remaining portions of the first
material to a solution which etches said first material and said
third material much faster than said second material, so that an
aperture is created in the fist coating and a portion of the upper
surface of the semiconductor body thereby is uncovered;
immersing the remaining structure in a solution which etches the
second material much faster than the third material so that the
second coating is thinned and the aperture in the second coating is
enlarged so that annulus of uncovered first material is left around
the perimeter of the aperture in the first coating;
subjecting the structure to a beam of ions having energy sufficient
to penetrate the uncovered portion of the first material but not
sufficient to penetrate the covered portion of the first
material.
8. A method as recited in claim 7 wherein the first material is the
same as the third material.
9. A method as recited in claim 8 wherein the first material is
silicon oxide.
Description
BACKGROUND OF THE INVENTION
1 Field of the Invention
This invention relates generally to the fabrication of
semiconductor devices; and, more particularly, to the formation of
tucked under, passivated junctions by ion implantation through a
mask.
2. Description of the Prior Art
One of the generally desirable characteristics of the ion
implantation method of introducing dopant impurities into a
semiconductor surface is that the dopant impurities proceed in a
substantially straight line path without the isotropic, sideways
movement of impurities which is characteristic of a diffusion
process. This straight line characteristic does create a problem,
however, in that planar junctions produced by ion implantation are
not normally tucked under a protective, passivating oxide where the
junction intersects the surface of the device, as is generally
desirable.
One way of solving this problem, as disclosed in U.S. Pat. No.
3,388,009, issued June 11, 1968, is to implant the dopant ions
through a mask and then form a new protective coating over the
surface so that the apertures in the new protective coating are
smaller than the corresponding apertures in the mask. This method,
of course, results in junctions which are tucked under the edges of
the apertures in the new coating. However, this method is
unsatisfactory for many applications in that it is difficult to
align accurately the apertures in the new coating with the
apertures in the original ion implantation mask. Alignment becomes
increasingly difficult as device geometries decrease in size.
SUMMARY OF THE INVENTION
Accordingly, a primary object of the present invention is a method
for fabricating tucked under, passivated junctions by ion
implantation without incurring the above-described alignment
problem.
To this and other ends, the method in accordance with out invention
includes the use of a layered mask against which a beam of
high-energy dopant ions is directed to produce the desired junction
configuration.
More specifically, in accordance with our invention, there is
formed a first mask of a first material on a surface of a
semiconductive body, the first mask having an aperture therein so
that a selected portion of the surface of the body is exposed.
There also is formed a second mask of a second material over and
contiguous with the first mask, the second mask having an aperture
registered with the aperture in the first mask and larger than the
aperture in the first mask so that an annulus of the first mask is
not covered by any portion of the second material. The structure
then is subjected to a beam of dopant ions having energies
sufficient to penetrate the uncovered portion of the first mask and
sufficient to alter the conductivity of the semiconductor
thereunder, but of energy insufficient to penetrate completely the
portions in which the second mask overlies the first.
Still more specifically, in accordance with the preferred
embodiment of our invention, there is formed a first relatively
thin layer of a first material over the surface of a semiconductor
body. A second layer of a second material is formed thereover.
An apertured mask is formed over the second layer; and the
structure is immersed in an ambient which etches the second
material but which advantageously does not appreciably attack the
first material. In this manner there is formed a void in the second
layer under the aperture in the mask. The mask may then be removed;
and the structure immersed in an ambient which etches the first
material but which advantageously does not appreciably attack the
second material. In this manner there is formed a void in the fist
layer under the void in the second layer, and a portion of the
surface of the body is exposed.
The structure is then immersed in the ambient which etches the
second material but not the first material so that the second layer
simultaneously is thinned and the void in the second layer is
enlarged so that an annulus of uncovered first material is left
around the perimeter of the void in the first layer.
The structure is then subjected to a beam of dopant ions having
energy sufficient to penetrate the uncovered annulus of the first
layer but insufficient to penetrate the combined remaining second
layer and first layer. In this manner there is formed a PN junction
which intersects the surface underneath the annulus of the first
layer so that the junction is tucked under and is passivated by the
first layer. Depending upon the choice of specific materials,
additional layers advantageously may be added to those described
above. This will be described in more detail hereinbelow.
Also, selective backsputtering, rather than the above-described
selective etching, may be used to form the apertures in the layered
mask, if desired. Selective backsputtering is well known in the art
and is taught, for example, in U.S. Pat. No. 3,271,286, issued
Sept. 6, 1966 to M. P. Lepselter, and assigned to the assignee
hereof.
DESCRIPTION OF THE DRAWING
The foregoing and other objects, features and advantages of the
invention will be more clearly understood from the following
detailed description taken in conjunction with the drawing, in
which:
FIG. 1 shows a cross section of a semiconductor body having a PN
junction formed by ion implantation through a layered mask in
accordance with our invention;
FIG. 2-6 show the semiconductor portion of FIG. 1 substantially as
it appears following successive fabrication steps leading up to the
structure shown in FIG. 1; and
FIG. 7 shows a cross section of a semiconductor body incorporating
multiple FIGURES formed and passivated in accordance with our
invention.
It will be understood that for clarity and simplicity of
explanation the FIGS. of the drawing have not necessarily been
drawn to scale.
DETAILED DESCRIPTION
With reference now to the drawing, FIG. 1 shows a portion 10 of a
semiconductive body containing a PN junction 13 which has been
formed by ion implantation in accordance with our invention. It
will be seen that the portion of junction 13 which intersects the
surface of the body is tucked under a passivating dielectric layer
14.
The results of the more significant steps in the process leading to
the structure shown in FIG. 1 are illustrated by FIGS. 2-6.
More specifically, as shown in FIG. 2, we begin by forming a first
layer 14 over and contiguous with the surface of a semiconductive
portion 11, typically of silicon. Preferably, layer 14 is a
dielectric suitable for use as the passivating layer, e.g., a
thermally grown silicon oxide layer about 1,000 A. or more in
thickness. However, other dielectrics may be used; or, a deposited
layer of silicon oxide may be used instead of the thermally grown
layer.
Over layer 14 there is formed a second layer 15 of a material
different from the material of layer 14 so that selective etching
will be enabled. Preferably layer 15 is a dielectric, e.g.,
approximately 3,000 A. or more of aluminum oxide or silicon
nitride, which may be formed by evaporation, sputtering or thermal
decomposition.
Then, for practical reasons, which will be explained hereinbelow,
there is formed over layer 15 a third layer 16 which advantageously
is of the same material as contained in layer 14. However, layer 16
may be a dissimilar material, provided that it be etched by a
solution which does not attack layer 15 appreciably and also that
it not be attacked appreciably by the solution to be used to etch
layer 15.
Over layer 16 there is formed in known fashion a photoresist mask
17 which includes an aperture 18, as shown, over the area of the
semiconductor surface in which the PN junction is desired to be
formed.
Next the structure of FIG. 2 is subjected to an ambient, e.g.,
hydrofluoric acid, which etches the material of layer 16 but does
not appreciably attack the photoresist material 17, the result
being that an aperture is formed in layer 16 underneath the
aperture in the photoresist mask with some undercutting. The
resultant structure is shown in FIG. 3.
Subsequent to forming the structure of FIG. 3, the photoresist mask
is removed and the resultant structure is exposed to an ambient,
e.g., hot phosphoric acid at about 170.degree. C. which etches
layer 15, e.g., aluminum oxide, but does not appreciably attack
bottom layer 14. In this manner an aperture is formed in layer 15
underneath the aperture in layer 16 with some undercutting and the
etching process is self-terminating inasmuch as layer 15 is not
attacked. The resultant structure shown in FIG. 4.
Next the structure shown in FIG. 4 is subjected to an ambient,
e.g., hydrofluoric acid, which etches layers 14 and 16, but which
does not appreciably attack the material of layer 15 or the
semiconductor 11. In this manner layer 16 is completely removed and
that portion of layer 14 exposed through the aperture in layer 15
is etched through to expose a portion 19 of the silicon surface as
shown in FIG. 5.
Next the structure of FIG. 5 is subjected again to the ambient
which etches layer 15 but which does not appreciably attack the
material of layer 14. As layer 15 is etched, it becomes thinner,
but more importantly, the sidewall 15A of the aperture in layer 15
moves laterally to create a larger aperture as the etching
progresses. It will be appreciated that this uncovers an annulus 20
of the material of layer 14 surrounding the aperture in layer
14.
Having achieved the structure of FIG. 6, the next step is to
subject the device to a beam of high-energy dopant ions to form the
PN junction as shown in FIG. 1. For example, to convert the
structure shown in FIG. 6 into the structure shown by FIG. 1, a
beam of light energy, e.g., about 200 Kev., boron ions is directed
in known fashion to the surface of the semiconductive body. Layers
14 and 15 act as a mask, and, provided the energy of the beam is
sufficient that the ions penetrate the uncovered portion of layer
14 around the aperture but do not penetrate the combined dielectric
layers 14 and 15, the localized zone 12 and the corresponding
junction 13, as shown in FIG. 1, are formed.
For example, a 100 Kev. beam of boron ions penetrates about 3,000
A. into exposed silicon and forms half-width of about 600 A. Thus,
since a beam penetrates silicon oxide about as much as it
penetrates silicon, 100 Kev. ions passing through the 1,000 A thick
uncovered annulus 20 of layer 14 will penetrate into the silicon
about 2,000 A. A 100 Kev. beam will not penetrate completely the at
least 4,000 A. thick combined regions which comprise at least 3,000
A of aluminum oxide and 1,000 A. of silicon oxide.
As is well-known in the art, the doping profile may be controlled
as desired by modulating the beam energy, current, and time
duration, such as disclosed, for example, in the article "Ion
Implantation in Semiconductors," by J. F. Gibbons, in Proc. IEEE,
Vol. 56, No. 3, March, 1968, pages 295-319.
It will be apparent to those skilled in the art that layer 15 may
be left as a part of the structure of provide additional
passivation or may be removed, as desired.
Referring back now to the multiple layers, only two layers are
essential to our invention. However, in the above-described
embodiment using silicon oxide as the first layer 14 and aluminum
oxide as the second layer 15, a third layer 16 which includes
silicon oxide advantageously is employed because the known
photoresist masks are not considered completely satisfactory, for
most applications, in the hot phosphoric acid usually used to etch
aluminum oxide. Hence, a more satisfactory "mask" of silicon oxide
16 is first formed using a photoresist mask as described.
It will be understood that other arrangements may be devised by
those skilled in the art without departing from the spirit and
scope of our invention.
For example, none of the masking layers need be dielectrics. Any or
all of those layers may be conductive, as selected by the worker in
the art of particular situations. For example, 1,000 A or more of
copper may be used for layer 15; and in this case layer 16 could be
dispensed with an a nitric acid solution could be used for
selectively etching the copper. Of course, if a metal is used for
layer 15, it would be normally removed after implantation to avoid
inter-device electrical shorts.
Further, multiple layers and selective etching may be employed to
form a mask through which successive implantations and/or
diffusions may be performed to produce nested PN junctions, as
shown in FIG. 7.
As shown in FIG. 7, three masking layers 22, 23, and 24 are formed
over a semiconductive body 21, e.g., P-type. The void in layer 23
is larger than the void in layer 22; and the void in layer 24 is
larger than the void in layer 23. A first implantation of N-type
dopant ions having energy sufficient to penetrate layers 22 and 23
forms the "buried" localized N-type zone 25. Such buried
implantations are described, for example, in U.S. Pat. No.
3,431,150, issued Mar. 4, 1969 to R. P. Dolan Jr., et al. Then an
N-type surface zone 26 is formed by solid-state diffusion or by ion
implantation, as desired. It will be apparent that N-type zone 26
may be an emitter, P-type zone 27 a base, and N-type zone 25 a
collector for a transistor.
Although these samples have been described in terms of single
devices, it is obvious that many such devices may be made in a
single semiconductive body, e.g., in integrated circuit
configurations. For example, a transistor as shown in FIG. 7 is a
self-isolated transistor advantageously employed in integrated
circuits, as described in more detail in the copending U.S.
application, Ser. No. 703,164 filed Feb. 5, 1968 in the name of B.
T. Murphy and assigned to the assignee hereof.
* * * * *