U.S. patent number 3,607,680 [Application Number 04/762,047] was granted by the patent office on 1971-09-21 for method for producing a device for transmitting an electron beam.
This patent grant is currently assigned to Matsushita Electric Industrial Co., Ltd.. Invention is credited to Hidehiko Kawakami, Yoshihiro Uno.
United States Patent |
3,607,680 |
Uno , et al. |
September 21, 1971 |
METHOD FOR PRODUCING A DEVICE FOR TRANSMITTING AN ELECTRON BEAM
Abstract
A device pervious to an electron beam having a partition through
which the electron beam is led from one atmosphere to another. The
partition is in the form of a thin film of an electron-beam
pervious metal oxide such as alumina which has a high mechanical
strength that can withstand the pressure difference between the two
atmospheres.
Inventors: |
Uno; Yoshihiro (Machida-shi,
JA), Kawakami; Hidehiko (Kawasaki-shi,
JA) |
Assignee: |
Matsushita Electric Industrial Co.,
Ltd. (Kadoma-shi, Osaka, JA)
|
Family
ID: |
13250970 |
Appl.
No.: |
04/762,047 |
Filed: |
September 24, 1968 |
Foreign Application Priority Data
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Oct 3, 1967 [JA] |
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42/64193 |
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Current U.S.
Class: |
205/122; 216/56;
205/201; 313/420 |
Current CPC
Class: |
H01J
5/18 (20130101); G03G 9/00 (20130101); G03G
15/321 (20130101); H01J 31/065 (20130101) |
Current International
Class: |
H01J
31/00 (20060101); H01J 5/18 (20060101); H01J
31/06 (20060101); H01J 5/02 (20060101); G03G
9/00 (20060101); G03G 15/32 (20060101); G03G
15/00 (20060101); C23b 005/48 (); B29c 017/08 ();
H01j 033/00 () |
Field of
Search: |
;204/143,15,24
;156/3 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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1,182,379 |
|
Jun 1959 |
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FR |
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1,131,481 |
|
Jun 1962 |
|
DT |
|
Primary Examiner: Williams; Howard S.
Assistant Examiner: Tufariello; T.
Claims
We claim:
1. A method of making a device pervious to an electron beam having
a unitary structure of an electron pervious thin film and a
perforated support having a plurality of holes defined therein,
comprising the steps of: first, oxidizing one side surface portion
of a base metal sheet; forming said electron pervious thin film
from a layer of metal oxide; and thereafter removing unoxidized
portions of said metal sheet by chemical etching thereof to form
said perforated support.
2. A method of making a device pervious to an electron beam as
defined in claim 1, comprising the further step of forming a
photoresist mask of a desired pattern before said chemical etching
step, wherein said chemical etching is performed with an etching
solution selected from the group consisting of hydrochloric acid,
and a mixture of hydrochloric acid and ferric chloride
solution.
3. A method of making a device pervious to an electron beam as
defined in claim 1, comprising the further step of depositing a
metal reinforcing member selected from the group consisting of
iron, chromium and nickel on the end surface of said support in the
direction opposite to said thin film by a electrodeposition.
4. A method of making a device pervious to an electron beam as
defined in claim 1, comprising the further steps of: depositing a
conductive film in the pattern of said support on said metal oxide
layer; and electrodepositing a metal on said conductive film to
form a further support on the surface of said oxide layer opposite
to the support formed by said chemical etching.
5. A method of making a device pervious to an electron beam having
a unitary structure of an electron pervious thin film and a
perforated support defining a plurality of holes therein comprising
the steps of: first, oxidizing one side portion of a base metal
sheet to form a layer of thin film metal oxide; depositing a
conductive film on said metal oxide layer in a desired pattern of
said support; electrodepositing a metal on said conductive film to
a thickness necessary for forming said support; and removing an
unoxidized portion of said metal sheet by chemical etching.
6. A method of making a device pervious to an electron beam as
defined in claim 5, wherein said oxidizing step comprises anodic
oxidation; said conductive film-depositing step comprises vacuum
evaporation; and said chemical etching step comprises etching with
a solution selected from the group consisting of hydrochloric acid,
and a mixture of hydrochloric acid a ferric chloride solution.
Description
This invention relates to a device pervious to an electron beam
which employs a thin film of a metal oxide such as alumina
(Al.sub.2 0.sub.3) singly or a unitary structure comprising such a
film and a reinforcing member of aluminum or other metal.
A substance irradiated by an electron beam undergoes various
physical and chemical changes depending on the electric charge and
energy possessed by the electron beam. The properties of the
electron beam giving rise to such changes in a substance are
utilized in many apparatus including medical applicances,
electronic measuring apparatus and electronic recording
apparatus.
It is a primary object of the present invention to provide a device
pervious to an electron beam which comprises a partition in the
form of a thin film of a metal oxide such as alumina (Al.sub.2
0.sub.3) through which an electron beam can be led out of one
atmosphere into another atmosphere. The partition may be a single
film of alumina or the like or may be a unitary structure having
such a film backed up by a supporting member having a series of
slits or an array of fine holes or a meshlike form.
The above and other objects, features and advantages of the present
invention will be apparent from the following description taken in
conjunction with the accompanying drawings, in which:
FIG. 1a is a schematic sectional view of an embodiment of the
present invention when it is used as a partition between a high
vacuum chamber and a low vacuum chamber;
FIG. 1b is a schematic sectional view of another embodiment of the
present invention when it is used as a partition between a high
vacuum chamber and the atmosphere;
FIG. 2a shows how to manufacture one form of the device of the
present invention as shown in FIG. 1a which comprises a single film
of alumina;
FIGS. 2b through 2e show a series of steps for manufacturing
another form of the device of the present invention as shown in
FIG. 1b which comprises a unitary structure of a thin film of
alumina and a reinforcing member of aluminum;
FIG. 3 is a schematic sectional view of a still further embodiment
which is obtained by further reinforcing the structure of FIG. 2e
with another metal; and
FIG. 4 is a schematic sectional view of a modification of the
structure shown in FIG. 3.
Referring to FIG. 1a,the device according to the present invention
comprises a thin film 4 of a metal oxide such as alumina which is
used as a partition between a high vacuum chamber A and a low
vacuum chamber B. An electron gun 1 and a deflecting plat assembly
2 are disposed within the high vacuum chamber A for the emission
and deflection of an electron beam. A medium 3 which is acted upon
by the electron beam is disposed within the low vacuum chamber B.
The medium 3 may be a phosphor, a photographic film, an
electrostatic recording sheet, a high molecular material, a
thermoplastic film or a crystal of an alkali halide which, when
acted upon by an electron beam, develops some sort of changes
therein and needs replacement or generates a gas. The medium 3 can
be replaced by any known method, but it will be seen that a
simplified device can be employed for exhausting the interior of
the chamber B and replacing the medium 3 in the chamber B. The
partition 4 is backed up by an annular supporting member 5.
Referring to FIG. 1b, a thin film 4 of a metal oxide such as
alumina is shown as used a partition between a high vacuum chamber
and the atmosphere. In this embodiment, the surface area of the
alumina film 4 can not be made so large because the atmospheric
pressure is imparted to the film 4. Accordingly, the alumina film 4
is bodily backed up by a supporting member 5 having a series of
slits or an array of fine holes or a meshlike form. When the
alumina film 4 has the series of slits or an array of fine holes a
medium (not shown) acted upon by an electron beam is moved
perpendicularly with respect to the row of slits or an array of
fine holes and the electron beam sweeps across the medium in the
same direction, thereby connecting a signal into the corresponding
pattern. It is known that an electron beam penetrates through an
alumina film of a thickness less than several .mu.m when it is
accelerated with an accelerating voltage of 20 to 30 kV. From the
viewpoint of scattering angles and energy of incident electron
beam, film thickness is preferably 1 .mu.mor less.
It is said that alumina made by anodic oxidation is about five
times as strong as metallic aluminum. In the case of a thin film of
aluminum backed by a supporting member having a series of fine
holes, its thickness t should be larger than the value determined
by t.sub.A1 =r.times.10.sup.-.sup.2 where t.sub.Al is the thickness
of the thin film of aluminum in cm, and r is the radius of the fine
holes in cm, so that the thin film of aluminum can withstand a
pressure difference of 1 atmosphere. On the other hand, in the case
of a thin film of alumina backed by a similar supporting member,
its thickness t which can sufficiently withstand the above pressure
difference is given by t.sub.Al .sub.0 =2r.times.10.sup.-.sup.3.
Through comparison of the required thickness described above, it is
apparent that an alumina film having a very small thickness can
satisfactorily be used for the purpose.
FIG. 2a is an explanatory view to illustrate an exemplary process
for the manufacture of such an alumina film. The alumina film is
made by anodic oxidation. A sheet 11 of aluminum (preferably having
a purity of at least 99.99% of suitable thickness is subjected to a
pretreatment including immersing the sheet in a 5% to 10% sodium
hydroxide solution for 1 minute at 60 to 80.degree. C.,
neutralizing the sodium hydroxide by immersing the sheet in a 5% to
10% cold nitric acid solution, and immersing the sheet in a 60 to
70% chromium sulfate solution for 10 to 20 minutes for the sake of
defatting. The aluminum sheet 11 is employed as the anode and is
dipped in an electrolyte in such a manner that one of its surfaces
worked to a smooth finish is solely dipped in the electrolyte. The
electrolyte may have a composition consisting of a 10% boric acid
solution and a 0.1% sodium borate solution. The electrolyte is
heated up to 80 to 100.degree. C. and current is passed thereacross
to effect the anodic oxidation on the aluminum sheet 11 thereby to
obtain a structure as shown in FIG. 2a. The structure thus obtained
is then dipped in an etching solution for dissolving away the
aluminum to obtain an alumina film 12 as final product. The etching
solution may be hydrochloric acid or mixture of hydrochloric acid
and a ferric chloride solution.
FIGS. 2b through 2e show an exemplary process for the manufacture
of a unitary structure comprising such an alumina film and a
supporting member therefor. The photoresist technique may be
employed to make an electron-beam pervious window in which the
alumina film is backed up by a supporting member having a series of
fine holes. This structure is advantageous in that the prior art
procedure for carefully bonding the alumina film to the support
therefor is unnecessary and therefor the alumina film is more
strongly fixed to the supporting member than hitherto.
In FIG. 2b,a photoresist layer 13 is shown as coated on a structure
comprising an aluminum sheet 11 having the required thickness and
an alumina layer 12 of predetermined thickness formed on the
aluminum sheet 11 by anodic oxidation. In FIG. 2c, a mask 14 of a
predetermined pattern is placed on the photoresist layer 13 and
ultraviolet light is directed from an ultraviolet light source 15
for the exposure. In FIG. 2d, the photoresist layer 13 is developed
to leave those portions of the photoresist layer 13 which conform
to the predetermined pattern. The structure is the soaked in an
etching solution to leave those portions of the aluminum sheet 11
in the predetermined pattern. These portions of the aluminum sheet
11 serve as a supporting member for the alumina film 12.
The supporting member may be made by electrodeposition. For
example, a conductive pattern may be made by deposited on the
alumina film 12 in FIG. 2a by printing, vacuum evaporation or
photoresist technique and a metal is electrodeposited on the
conductive pattern until it acquires a predetermined thickness.
Aluminum is then etched away by an etching solution.
Referring to FIG. 3, another embodiment of the device according to
the present invention comprises a thin film 21 of alumina, a
perforated supporting member 22 for the alumina film 21, and a
reinforcing member 23 of a metal such as iron, chromium or nickel
which is deposited by electrodeposition. In a modification shown in
FIG. 4, the supporting member 22 of aluminum and the reinforcing
member 23 of iron, chromium, nickel or the like are disposed on
opposite surfaces of the alumina film 21.
From the foregoing description it will be understood that the
present invention provides an electron-beam pervious partition of a
metal oxide such as alumina. The use of alumina, for example, is
advantageous over metallic aluminum. More precisely, an electron
beam has such a nature that it penetrates more easily through a
substance having a small atomic number than through a substance
having a larger atomic number. Alumina which consists of aluminum
and oxygen has a man atomic number of
[(atomic number of aluminum .times.2 + atomic number of oxygen
.times.3)/5] which is approximately 10. Thus, alumina permits
penetration of an electron beam more easily than any other
substance. Moreover, alumina is stronger than metals when it is
compared with metals in terms of mass. For instance, alumina is
about five times as strong as metallic aluminum. In the application
of a thin film of a metal oxide such as alumina as an electron-beam
pervious window for an electronic tube, heating is required in
order to effect bonding of the film to the glass envelope and
evacuation of the interior of the glass envelope. A metal oxide
such as alumina is preferred in this respect too since alumina
which is chemically stable is not subject to damage or
deterioration when exposed to heat.
* * * * *