U.S. patent number 3,607,478 [Application Number 04/781,315] was granted by the patent office on 1971-09-21 for method of treating semiconductor elements of circular outline.
This patent grant is currently assigned to Robert Bosch GmbH. Invention is credited to Karin Henninges, Bernd Schulze.
United States Patent |
3,607,478 |
Henninges , et al. |
September 21, 1971 |
METHOD OF TREATING SEMICONDUCTOR ELEMENTS OF CIRCULAR OUTLINE
Abstract
A method of and apparatus for treating elements of circular
outline. A vessel is provided with guide grooves which are either
straight and parallel to one another or are torus-shaped and
concentric with one another. The vessel is mounted for tilting
movement about a ball and socket joint and accommodates a bath of
etching fluid. Disc-shaped elements to be treated are supported on
edge in the respective guide grooves. A motor is mounted below the
vessel and its output shaft drives a cam follower having at least
one ascending and at least one descending surface portion, and in
the case of straight parallel guide grooves two rod-shaped follower
members are mounted for sliding movement in axial direction of the
motor shaft with their ends resting on the cam disc surface and
their upper ends engaging the bottom wall of the vessel so that,
when they are shifted in axial direction of the motor output shaft,
the vessel is tilted alternately to one side and the opposite side
about the ball and socket joint. If the guide grooves are
torus-shaped, then three such follower members are used which are
circumferentially spaced about the axis at equiangular
locations.
Inventors: |
Henninges; Karin (Stuttgart,
DT), Schulze; Bernd (Benningen, DT) |
Assignee: |
Robert Bosch GmbH (Stuttgart,
DT)
|
Family
ID: |
5682531 |
Appl.
No.: |
04/781,315 |
Filed: |
December 5, 1968 |
Foreign Application Priority Data
|
|
|
|
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Dec 14, 1967 [DT] |
|
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P 16 21 428.1 |
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Current U.S.
Class: |
438/747; 134/33;
134/161; 366/208; 134/25.4; 134/157; 366/219 |
Current CPC
Class: |
B24B
31/027 (20130101); C23F 1/00 (20130101); C23F
1/08 (20130101); H01L 21/00 (20130101) |
Current International
Class: |
C23F
1/08 (20060101); C23F 1/00 (20060101); B24B
31/027 (20060101); B24B 31/00 (20060101); H01L
21/00 (20060101); H01l 007/00 (); B08b
003/10 () |
Field of
Search: |
;156/17,345
;134/157,161,32,33,25 ;259/73,75 |
References Cited
[Referenced By]
U.S. Patent Documents
Other References
Duigon et al., RCA Technical Note Number 521, March 1962.
|
Primary Examiner: Goolkasian; John T.
Assistant Examiner: Gil; Joseph C.
Claims
What is claimed as new and desired to be protected by Letters
Patent is set forth in the appended claims.
1. A method of treating semiconductor elements, comprising the
steps of providing a bath of etching fluid in a receptacle having a
bottom wall, the inner surface of said bottom wall having at least
one guide groove open to said bath; immersing in said bath, and
placing on edge in said guide groove, at least one semiconductor
wafer element of circular outline having other than planar major
surfaces; and imparting to said receptacle movement requisite for
agitation of said etching fluid with concomitant rolling of said
semiconductor wafer element in said guide groove, so that the
etching fluid sweeps over said major surfaces during such rolling
to thereby etch them and impart to them a planar configuration.
2. A method as defined in claim 1; and guiding said element for
rolling for rolling on edge in a straight path.
3. A method as defined in claim 2 and further comprising the step
of periodically reversing the direction of rolling movement of said
element in said straight path.
4. A method as defined in claim 2; further comprising immersing
additional semiconductor wafer elements in said bath and effecting
rolling movement of said additional elements in additional straight
paths paralleling the first-mentioned straight path.
5. A method as defined in claim 1; and guiding said element for
rolling in a torus-shaped path surrounding an axis.
6. A method as defined in claim 5; and further comprising the step
of effecting periodic wobbling movement of said bath and said
element immersed therein about said axis.
7. A method as defined in claim 5; further comprising immersing
additional semiconductor wafer elements in said bath and effecting
rolling of said additional elements in additional torus-shaped
paths coaxial with the first-mentioned torus-shaped path.
8. A method as defined in claim 1, said bath comprising a mixture
composed of nitric acid, hydrofluoric acid and glacial acetic
acid.
9. A method as defined in claim 8; further comprising the addition
of a wetting agent to said mixture.
10. A method as defined in claim 9, wherein said wetting agent is
sodiumlauryl sulfate.
11. A method as defined in claim 9, wherein 10 ml. wetting agent
are added per 600 ml. of said mixture.
Description
BACKGROUND OF THE INVENTION
The present invention is concerned with the treating of elements of
circular outline, and more particularly with the polishing of
surfaces of such elements by subjecting them to an etching
treatment. Still more particularly, the present invention is
concerned with a method of carrying out such treatment and with an
apparatus for carrying out the method.
Certain elements of circular outline, and particularly
semiconductor discs constituting a semifinished product for use in
the manufacture of electronic components such as diodes,
transistors, thyristors and integrated circuits, must be subjected
to a polishing action. Conventionally, such semiconductor discs are
manufactured by slicing disc-shaped blanks off longer rods of the
crystalline semiconductor material, lapping the blanks, and
thereupon polishing and etching them. The etching step is to remove
the crystalline layers which have been disturbed by the mechanical
operations, and on the other hand it is to assure that the surfaces
so treated are to be as smooth and mirrorlike in finish as
possible. Particularly the smoothness is highly important,
especially if the completed blanks are thereupon to be further
processed in the so-called planar method, because if the surface is
not completely smooth there will be inadequate contact between the
photo shield and the semiconductor disc and this in turn will
result in unsharp contours which adversely affect the quality of
the finished planar structures. In the event that the semiconductor
disc surface is concavely curved, there is also the danger that the
photo shield might be scratched by the sharp edge of the disc.
However, while etching of the surfaces is thus already known, it
has been found that the known etching methods and apparatus for
carrying out such methods will not produce the requisite total
smoothness of the surfaces. To arrive at a smoothness which is
anywhere near acceptable it is therefore necessary in the prior art
approaches to subject the surfaces prior to etching to a multistage
mechanical polishing process which may, for instance, have as its
final step a polishing stage with Ceroxyde or Zirkoniumoxide.
However, once treated in this manner, the semiconductor discs may
only be etched briefly because a prolonged etching would again
adversely affect the smoothness obtained by the mechanical
polishing steps.
It is the purpose of the present invention to overcome the
aforementioned disadvantages.
More particularly, it is an object of the present invention to
provide a method for etching semiconductor discs and analogous
elements of circular outline, wherein the disadvantages just
outlined above are not present.
Still more specifically, it is an object of the present invention
to provide such a method which permits etching of the major
surfaces of semiconductor discs so that they will become completely
smooth and without encountering the aforementioned
disadvantages.
An additional object of the present invention is to provide an
apparatus for carrying out the novel method.
SUMMARY OF THE INVENTION
In accordance with the above objects, and others which will become
apparent hereafter, one feature of our invention recites in
providing a method of treating elements of circular outline,
including disc-shaped semiconductor elements, which method
comprises the steps of immersing at least one element of circular
outline having other than planar major surfaces in a bath of
etching fluid. Thereupon, relative movement is effected between the
element and the bath and this includes imparting rolling movement
to the element so that the etching fluid sweeps over the major
surfaces thereof to thereby etch the same and impart to them a
planar configuration.
Our novel invention is based on the realization that the local
etching speed depends substantially from the relative speed of any
given surface point of the element to be treated with respect to
the etching fluid. Accordingly, we provide for relative movement
between the element to be treated and the bath etching fluid, and
we accomplish this by imparting to the element a rolling movement
to thereby control the relative speed of the element with respect
to the fluid. Advantageously we periodically change the rolling
movement so that the same is periodically repeated.
We carry out our invention by providing in a vessel for
accommodating the bath of etching fluid, either a plurality of
straight guide grooves arranged in parallelism with one another,
and tilting the vessel about an advantageously normal axis, with
respect to the elongation of the guide grooves, or by providing the
guide grooves in a torus-shaped configuration and arranging them
coaxially, in which case the vessel is subjected to a periodic
tumbling movement about a point located on the axis of the guide
grooves. It will be appreciated, of course, that a single guide
groove will fulfill the purposes of the present invention, if for
any reason a single element should be subjected to such treatment
at one time, or if a small enough number of elements is
simultaneously being treated which can be accommodated in a single
such groove.
In any case, after being subjected to our novel method carried out
in our novel apparatus, the surfaces of the elements, hereafter for
the sake of convenience identified as semiconductor discs, will be
completely smooth. Mechanical polishing as heretofore necessary,
particularly multistage mechanical polishing, is therefore no
longer necessary and the manufacture of semiconductor discs by
resorting to our novel invention is accordingly considerably less
expensive and more economical than heretofore possible. It is true
that by resorting to our novel invention and eliminating the
mechanical polishing procedure the duration of the etching step is
somewhat longer than heretofore, but this does in no way adversely
influence the smoothness of the surfaces which are obtained. A
particular advantage is the fact that semiconductor discs etched,
or rather polish-etched in accordance with our invention can be
immediately used for further processing into semiconductor units,
particularly of the type which is manufactured subsequent to the
planar treatment or through epitaxial growing of semiconductor
layers.
The novel features which are considered as characteristic for the
invention are set forth in particular in the appended claims. The
invention itself, however, both as to its construction and its
method of operation, together with additional objects and
advantages thereof, will be best understood from the following
description of specific embodiments when read in connection with
the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWING
FIG. 1 is a somewhat diagrammatic vertical section through an
apparatus according to our invention and illustrating a first
embodiment of the invention;
FIG. 2 is a partially sectioned top plan view of the vessel shown
in the apparatus of FIG. 1;
FIG. 3 is a section taken on the line III--III of FIG. 2, with
parts broken away;
FIG. 4 is a top plan view of a portion of the drive arrangement for
the apparatus in FIG. 1;
FIG. 5 is a view similar to FIG. 1 but illustrating an apparatus
embodying a second embodiment of the invention;
FIG. 6 is a view similar to FIG. 2 but illustrating a top plan view
of the vessel in the apparatus of FIG. 5;
FIG. 7 is a section taken on the line VII--VII of FIG. 6 with parts
broken away;
FIG. 8 is a view similar to FIG. 4 but illustrating a part of the
drive arrangement of the apparatus in FIG. 5;
FIG. 9 is a developed view of the cam disc used in the apparatus of
FIGS. 1 and 5; and
FIGS. 10 and 11 illustrate preferred cross sections for the guide
grooves in the apparatus according to the present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
Discussing firstly the apparatus according to the embodiment
illustrated in FIGS. 1-4, to which FIGS. 9 and 10 have relevance as
will be discussed subsequently, is pointed out that reference
numeral 11 identifies a vessel of substantially quadratic cross
section and accommodating a bath 11 of etching fluid. The etching
fluid serves to etch semiconductor discs 10 of which one is
illustrated in phantom lines to show it immersed in the bath 11. It
might be pointed out here that different types of etching fluids
are usable, but that we have found it advantageous to use a mixture
of nitric acid, hydrofluoric acid and glacial acetic acid. Further,
to prevent the possibility of uneven etching we prefer to add a
wetting agent to the bath, and have found nitrium lauryl sulfate
particularly advantageous for this purpose. This will be discussed
in some more detail subsequently.
In the embodiment of FIGS. 1-4 there is inserted into the vessel 12
an insert 14 provided with straight guide grooves 13 which extend
in parallelism with one another. The preferred cross-sectional
configuration of these side grooves is shown in FIGS. 10 and 11
from which it is also evident that the height of the guide grooves
13 is somewhat in excess of the diameter of the semiconductor discs
10.
FIG. 1 shows that the vessel 12 is removably mounted on a support
15, here simply provided in form of an upwardly open cup-shaped
member in which the vessel 12 is partially received so as to be
retained therein. A pivot-and-socket joint is identified with
reference numeral 16 and mounts the member 15 on a support 18
which, as is evident from the drawing, has the form of a U lying on
its side. The portion 16a of the joint 16 is rigidly connected with
the support 18 and its pivot part cooperating with the socket is in
form of a cylindrical member. The socket is constructed by
inserting a member 16b into a recess provided in the underside of
the member 15 and rigidly connecting it with the latter. The axis
of the joint, that is the axis about which the vessel 12 may thus
pivot, is normal to the elongation of the guide grooves 13.
To effect the rolling movement of the members 10 which is required
in accordance with the present invention, a drive arrangement is
provided which serves to impart to the member 15 and thereby the
vessel 12 with the insert 14 a periodically 20a to-and-fro tilting
movement about the axis defined by the joint 16. For this purpose
we provide a drive motor 19 whose output shaft 19a extends upwardly
towards the member 15. The drive motor 19 is in the illustrated
embodiment so connected with the lower arm of the U-shaped support
18 that an extension of the axis of the shaft 19a will intersect
the axis of the joint 16. A cam disc 20, which is illustrated in
more detail in FIG. 9, is mounted on the output shaft 19a for
rotation therewith. FIG. 9 shows that the upper side of the cam
disc 20 is provided with a linearly ascending portion 20a and a
linearly descending portion 20b, as clearly visible in the
developed view in FIG. 9.
At opposite sides of the joint 16 the support 18 is provided with a
bore or aperture in which sleeve bearings 21 and 22 are
respectively mounted. Arranged for sliding movement in each of the
sleeve bearings 21, 22 and in the axial direction of the output
shaft 19a, are two follower members 24 and 25, respectively. These
members 24 and 25 are located in a plane normal to the axis of the
joint 16 which at the same time constitutes the plane of symmetry
of the vessel 12; they are equally spaced from the axis of the
joint 16, that is from the axis about which the vessel 12 may tilt.
Their underside abuts against the upper surface of the cam disc 20
whereas their upper side or upper end abuts against the underside
of the member 15. It follows from this that, when the cam disc 20
is rotated in response to actuation of the motor 19, the vessel 12
will be tilted to-and-fro about the axis defined by the joint 16 in
response to transmission of motion by the members 24, 25 whose
sliding movement, imparted to them by contact of their lower ends
with the ascending and descending portions of the cam disc 20, is
translated into tilting movement of the vessel 12. As a result, the
semiconductor discs 10 which are supported on edge in the guide
grooves 13, will roll in the bath 11 of etching fluid from left to
right and then from right to left in the vessel. This results in
the desired even and smooth etching of the surfaces of the elements
or semiconductor discs 10.
The embodiment illustrated in FIGS. 5-8, to which FIGS. 9-11 have
relevance as will be discussed, the etching vessel is identified
with reference numeral 12a and is of circular cross section. In
this embodiment elements which are identical with those of the
embodiment in FIGS, 1-4 are identified with the same reference
numeral, and accordingly the insert carrying the guide grooves is
identified with reference numeral 13. Here, however, the guide
grooves are identified with reference numeral 13a and it will be
seen that they are of torus-shaped configuration and are coaxial
with one another.
In accordance with the necessity to impart a different type of
movement in the embodiment of FIGS. 5-8 than in the embodiment of
FIGS. 1-4, the embodiment of FIGS. 5-8 utilizes a ball-and-socket
joint 17 in place of the joint identified with reference numeral 16
in the preceding embodiment. Here, the portion 17a is again rigidly
connected with the support 18 and its upper part is constructed not
as a cylindrical member but as a ball. The socket is here
constituted by a recess in the underside of the member 15 in which
there is received a socket member 17b which is rigidly connected
with the member 15.
As in the embodiment of FIGS. 1-4, the drive arrangement for the
embodiment of FIGS. 5-8 includes the drive motor 19 having the
output shaft 19a with which the cam disc 20 is rigidly connected
for rotation therewith. The configuration of the cam disc 20 is the
same as in the embodiment of FIGS. 1-4. An extension of the axis of
the shaft 19a and the cam disc 20 passes through the center of the
ball portion of the joint 17.
The motion-transmitting arrangement of this embodiment differs from
that of FIGS. 1-4 in that three motion-transmitting follower
members are utilized, rather than two as in the preceding
embodiment. This is clearly visible in FIG. 8 where it will be seen
that three follower members 24, 25 and 26 are provided which are
located on the corners of an equilateral triangle whose center
coincides with the axis of the motor output shaft 19a and the cam
disc 20. As in the preceding embodiment, the follower members 24,
25 and 26 are arranged in sleeve bearings, here identified with
reference numerals 21, 22 and 23, which are secured in bores or
openings in the upper arm of the U-shaped support 18, so as to be
slidable in the direction of elongation of the axis 19a.
It will be clear that as the disc 20 is rotated in response to
actuation of the motor 19, the vessel 12a has imparted to it a
tumble movement about the center of the ball-and-socket joint 17.
Accordingly, the semiconductor disc 10 received on edge in the
torus-shaped guide grooves 13a have imparted to them a rolling
movement about the axis of the vessel 12a with the results
mentioned before. It need not be emphasized, of course, that in all
embodiments the guide grooves are filled with the etching
fluid.
With respect to the cam disc 20 it should be noted that the lifting
height, that is the extent to which the follower members 21 and 22,
or 21, 22 and 23, are lifted and allowed to descend in response to
rotation of the disc 20, is of importance. Excessive lifting height
requires too great a quantity of etching fluid whereas inadequate
lifting height will adversely affect the simultaneously initiation
of rolling movement of all of the semiconductor discs 10 being
treated and will also decrease their rolling speed. The most
advantageous lifting height constitutes a compromise between these
two factors which can be readily determined by experimentation on
the part of those skilled in the art.
Furthermore, it is important that the impartation of movement to
the etching vessel 12 or 12a, respectively, be such that the
rolling movement of the semiconductor discs 10 in the guide grooves
13 remain substantially in phase with the movements of the vessel.
Otherwise the inevitable mechanical friction between the
semiconductor discs 10 and the guide grooves will result in
statistical delay of individual ones of the elements then with
respect to the remaining ones, and eventually these delayed discs
will cease rolling movement completely. In accordance with the
invention this is overcome by interrupting the periodicity of
movement of the vessel through small pauses in which the delayed
semiconductor discs 10 can catch up with the others. To this end we
provide intermediate the ascending portion 20a and the descending
portion 20b of the cam disc 20 short horizontal portions 20c and
20d, as shown in FIG. 9. In other words, these portions 20c and 20d
are respectively provided between the trailing end of the ascending
portion and the leading end of the descending portion on the one
hand, and between the trailing end of the descending portion and
the leading end of the ascending portion on the other hand. In the
embodiment of FIGS. 1-4, for instance, these portions 20c and 20d
result in momentary pauses in the movement of the vessel 12 before
the same is subjected to a tilting movement contrary to the one it
has just completed.
As already mentioned, we have found a mixture of nitric acid,
hydrofluoric acid and glacial acetic acid advantageous, and
especially for the etching of celecium semiconductor discs.
However, we have found that on completion of the etching process
the semiconductor discs at times have surface defects which under
the microscope appear as groups of projections and crows-foot type
depressions and which may be distributed over the entire surface of
the disc. This is avoided in accordance with the invention by
adding a wetting agent, for example natriumlauryl sulfate, to the
etching fluid, which can be accomplished at room temperature and
under stirring of the bath of etching fluid. We have found it
advantageous to use 10 ml. of wetting agent for every 600 ml. of
etching fluid.
A semiconductor disc of celecium of approximately 26 mm. diameter
and which had an initial thickness of 300 micron, was subjected to
etching in accordance with the present invention and its thickness
decreased to 183 microns. Measurements taken after the etching
process was completed showed the maximum deviation from the ideal
smooth surface to be 1.6 micron. The total thickness gradient
measured on this disc was found to be approximately .+-.2 micron
and the median peak-to-valley height obtained for this disc was
0.12 micron when the disc was etched to a thickness of 183 microns,
and only 0.07 micron when the disc was etched to a thickness of 157
microns.
It will be understood that each of the elements described above, or
two or more together, may also find a useful application in other
types of applications differing from the types described above.
While the invention has been illustrated and described as embodied
in an apparatus for etching semiconductor discs, it is not intended
to be limited to the details shown, since various modifications and
structural changes may be made without departing in any way from
the spirit of the present invention.
* * * * *