U.S. patent number 3,585,397 [Application Number 04/765,120] was granted by the patent office on 1971-06-15 for programmed fine ion implantation beam system.
This patent grant is currently assigned to Hughes Aircraft Company. Invention is credited to George R. Brewer.
United States Patent |
3,585,397 |
Brewer |
June 15, 1971 |
**Please see images for:
( Certificate of Correction ) ** |
PROGRAMMED FINE ION IMPLANTATION BEAM SYSTEM
Abstract
A very small spot from an ion beam is effected by utilizing one
or more apertured plates having a central hole through which only a
small portion of the ion beam can pass. Decelerating electrodes may
be placed before the aperture in order to lessen the energy of the
ions sufficiently to preclude sputtering of the aperture.
Inventors: |
Brewer; George R. (Malibu,
CA) |
Assignee: |
Hughes Aircraft Company (Culver
City, CA)
|
Family
ID: |
25072699 |
Appl.
No.: |
04/765,120 |
Filed: |
October 4, 1968 |
Current U.S.
Class: |
250/298;
250/492.3; 976/DIG.433; 438/514 |
Current CPC
Class: |
H01J
37/08 (20130101); H01J 37/3172 (20130101); G21K
1/087 (20130101) |
Current International
Class: |
G21K
1/00 (20060101); G21K 1/087 (20060101); H01J
37/317 (20060101); H01J 37/08 (20060101); H01j
037/26 (); H01j 027/00 (); H01j 029/76 () |
Field of
Search: |
;313/63,63X
;250/49.5O |
References Cited
[Referenced By]
U.S. Patent Documents
Other References
Maguire, "Ion Implants Forge Tailor-Made Junctions"; Electronics;
April 19, 1963; pages 26, 27 and 29 cited (250--49.5(o)).
|
Primary Examiner: Segal; Robert
Claims
We claim:
1. An ion beam device for producing an ion beam suitable for ion
implantation of a target, said ion beam device comprising:
means for producing an ion beam, said means for producing an ion
beam comprising an ion source, an extraction electrode for
extracting ions from said ion source, and a focusing electrode for
focusing the extracted ions into a beam;
mass separation means positioned along the ion beam for separating
out of the ion beam ions of other than the selected species by
deflecting the unselected species away from the beam path;
an aperture plate and decelerating field reference electrode means
positioned downstream along the beam path from said mass separation
means for decelerating the ion beam to reduce the energy of the
beam to minimize sputtering from beam impingement on said aperture
plate, said decelerating field reference electrode being positioned
between said aperture plate and said mass separation means and
being at a potential substantially less positive than the potential
of said ion source, said aperture plate being substantially at the
potential of said ion source, said aperture plate having a limiting
aperture therein positioned along the path of the beam, said
limiting aperture being of smaller size than the beam so that only
a portion of the beam is able to pass therethrough and the balance
of the beam impinging the aperture plate is of sufficiently low
energy that it reduces sputtering of the aperture plate; and
focusing lens electrode positioned downstream of said limiting
aperture so that the ions passing through said limiting aperture
are focused for a minimum spot size on the target and are
accelerated towards the target;
deflecting electrodes positioned adjacent the ion beam downstream
of said accelerating and focusing lens electrode to deflect the ion
beam onto a target.
2. The ion beam device of claim 1 wherein horizontal and vertical
deflecting electrodes are positioned alongside of the ion beam
downstream of said accelerating and focusing lens electrode so as
to deflect the accelerated and focused beam onto the target.
3. The ion beam device of claim 2 wherein said limiting aperture
comprises a single limiting aperture.
4. The ion beam device of claim 2 wherein said limiting aperture
comprises first and second serially positioned limiting apertures,
said first and second serially positioned limiting apertures being
arranged along the path of the ion beam so that a portion of the
ion beam which is passed by said first limiting aperture is stopped
by the material surrounding said second limiting aperture so that
the number of ions passing along the ion beam is twice reduced.
5. The ion beam device of claim 1 wherein said ion source is
arranged to be held at a positive potential with respect to the
target, and said extraction electrode is arranged to be held at a
positive potential with respect to said target less than the
potential of said ion source, said decelerating field reference
electrode means is arranged to be held at a field reference
potential with respect to said beam and said limiting aperture is
arranged to be held at a positive potential with respect to said
target which is of a value between the potential of said ion source
and the potential of said extraction electrode.
6. The ion beam device of claim 5 wherein said limiting aperture
comprises a single limiting aperture.
7. The ion beam device of claim 5 wherein said limiting aperture
comprises first and second serially positioned limiting apertures,
said first and second serially positioned limiting apertures being
arranged along the path of the ion beam so that a portion of the
ion beam which is passed by said first limiting aperture is stopped
by the material surrounding said second limiting aperture so that
the number of ions passing along the ion beam is twice reduced.
Description
The present invention relates to an ion implantation system and,
more particularly, to such a system designed to produce a very
small spot with sufficient current for programmed spot
implantations in a specimen or target, such as a wafer of silicon
or other substrate material, by means of a raster scan technique.
Single or multiple implants may be effected by the system for a
large scale integrated array of semiconductor devices.
Prior ion implantation methods have required the use of masking
techniques to obtain a desired doped pattern in a substrate by
flooding a target with ions from an ion beam. These prior methods
have been effective to obtain a uniformly implanted or doped array
of semiconductor devices; however, it has not heretofore been
possible to obtain discretely implanted semiconductor devices at
specified sites without the use of masking techniques. Such methods
for applying masks are well known in the art and it is also well
known that such techniques are expensive and time consuming. A
related photolithographic technique has also been utilized;
however, this technique is limited in resolution and, therefore,
limits the size of devices obtainable.
In addition, it is necessary to provide prior ion beams with
sufficient current density in order that proper implantation can be
effected. Such current densities, however, are of such energy that
they can cause sputtering of any materials upon which they impact,
thereby necessitating frequent replacement thereof. In some cases,
such sputtering cannot be tolerated, yet there has been no
satisfactory means for overcoming this problem.
Furthermore, when ions are extracted from a source, the beam is
invariably not perfectly collimated, that is, the beams do not
emanate from the source in parallel paths. One of the causes of
this nonparallelism of the ion beam is a transverse spread caused
by mass separation. Another cause is the transverse thermal
velocity of the extracted ions, wherein the velocities of the
extracted ions are not all the same and wherein their paths are not
parallel. In order to focus the ions into a comparatively parallel
or convergent condition along a specified path, focusing lenses are
utilized. However, such lenses must be very carefully designed and
fabricated and placed within the ion implantation system.
The present invention is directed to the production of a fine ion
implantation beam for programmed local implantations by means of a
very small spot. In order to obtain such a spot, for example, of
approximately 1-micron diameter, the beam must be limited in such a
manner that the convergence angle is held within an angle which is
no greater than approximately 0.02 radians. To obtain such a narrow
beam having the required convergence angle in the presence of
transverse thermal velocities, one or more limiting apertures must
be utilized. One such aperture comprises a disc with a very small
hole therein so that only a very small portion of the ion beam may
pass therethrough. This small portion of the beam is located along
the axis of the beam path and the aperture is so designed as to
reject a large portion of those ions having transverse thermal
velocities which are not close to the desired narrow beam axis.
In order to prevent sputtering of the aperture by the large portion
of rejected ions, one embodiment of the invention utilized a means
by which all ions are sufficiently decelerated so that their energy
is less than that at which sputtering would occur. This
deceleration is effected by the use of electrodes having a
potential which is close to that of the source. After the desired
ions have passed through the limiting aperture, they are focused,
accelerated, and subsequently deflected in orthogonal directions so
as to precisely position the beam for programmed impact upon the
target.
In another embodiment, the ion beam is not decelerated at the
aperture and the sputtering thereof by the high energy beam is
tolerated. This condition shortens the life of the aperture but may
be preferred in some circumstances.
In order to obtain the desired spot implantation of approximately
one micron, a current of the order of 10.sup..sup.- 9 amperes is
required at the target which, in turn, requires a source current
density of approximately 2 ma./cm..sup. 2 or greater of the desired
dopant ion, for example, phosphorous or boron. The value of
required source current density must be sufficiently high because,
in order to focus the beam having transverse thermal velocities
into a fine spot, it is necessary to provide an initial high
current density and then shear off most of the current. Such
sources providing the desired initial high current densities
include duoplasmatrons, surface ionization sources, and electron
bombardment sources.
After the desired dopant ion has been extracted from the source and
initially focused, it may be passed through a magnetic mass
separator which is so adjusted as to cause the beam to be slightly
divergent at exit. The system of the present invention, however,
can also be used without mass separation to avoid the further beam
spread caused by the mass separator beyond the spread in initial
energy of the ions in the source. In such a case, a surface
ionization source is desired since this type source yields a very
uniform initial energy. Regardless of whether mass separation is
utilized, the beam is then decelerated and collected on an
electrode having a potential which has a value near that of the
source potential and within the sputtering threshold of a limiting
aperture.
A small fraction of the beam passes through the limiting aperture
and thereafter is accelerated by an electrode, deflected
electrostatically, and finally focused. If greater control of the
ion beam is required in order to further limit the number of ions
passing along the desired beam axis and/or to provide a precise
mechanical alignment of the selected ion beam independent of the
mass separation, it may be desirable to use more than one limiting
aperture.
It is, therefore, an object of the present invention to provide an
ion implantation system designed to produce a very small ion beam
spot to allow programmed spot implantation.
Another object of the present invention is the provision of a
method for producing a very small ion beam spot for programmed spot
implantations.
Another object is to provide a means and method for obtaining a
very narrow ion beam with minimum sputtering of electrodes.
Other aims and objects, as well as a more complete understanding of
the present invention, will appear from the following explanation
of exemplary embodiments and the accompanying drawings thereof, in
which:
FIG. 1 is a schematic view of the apparatus used to provide a
narrow ion beam for spot implantation of a target by means of a
single limiting aperture, and
FIG. 2 is a schematic diagram of an apparatus similar to that of
FIG. 1 but utilizing two limiting apertures.
Accordingly, with reference to FIG. 1, a fine ion implantation beam
system 10 comprises an ion source 12 having an extraction electrode
14 and focusing electrode 16 to produce an ion beam 18 of
sufficient current density to permit spot implantations of a target
20 which may comprise one or more semiconductor devices arranged
individually, as an array, as an integrated circuit, or as any
other suitable device or material into which the ions are to be
implanted. The beam is directed toward mass separator 22 which is
designed to select the desired ion species by bending the beam
through a desired angle. Separator 22 can be adjusted so that the
beam is divergent as shown by indicia 24 at exit from the mass
separator.
The beam thereupon, in an embodiment of the present invention,
passes between a pair of electrodes 26 which define, with plate 28,
the deceleration field region for divergent beam 24. At this point,
the beam enters upon a limiting aperture slate 28, which may
comprise, for example, tungsten or molybdenum. The limiting
aperture is provided with a very small hole 30 in order to permit
only those ions having the desired low transverse velocities to
pass therethrough and along the desired axis. Thereafter, a narrow
beam 32, as produced by aperture 30, passes within a focusing lens
34 in order to properly shape beam 32. Thereafter, the narrow beam
passes through a deflection system comprising vertical deflecting
electrodes 36 and horizontal deflecting electrodes 38, both of
which are placed on either side of the ion beam.
If desired, a double deflection system as disclosed in copending
Pat. application Ser. No. 765,125, filed Oct. 4, 1968; now U.S.
Pat. No. 3,569,757, granted Mar. 9, 1971, herewith may be used when
accurate alignment of the beam and the substrate at all parts of
the substrate is required. The beam finally impacts upon target 20
at a programmed spot 40 on one device in order to provide the
desired spot implantation. Two-dimensional movement of the beam
provides for localized implantations as desired.
Referring now to FIG. 2, a double limiting aperture 28' and 28"
having holes 30' and 30" is used to further limit divergent exit
beam 24. Beam 18, after passing through mass separator 22, and made
slightly divergent at 24, is first passed through aperture 28' to
produce a subsequent beam configuration 29. Beam 29 may still have
more than the desired level of transverse velocities which are near
the axis of the beam. Therefore, a second limiting aperture 28"
further limits the number of ions of beam 29 intended to pass along
the desired axis to more precisely form narrow beam 32 than
accomplished by the similar narrow beam of FIG. 1. The use of two
limiting apertures also permits the direction of the limited ions
to be mechanically defined, independent of any mass separation. In
other respects, the system of FIG. 2 is the same as that of FIG.
1.
Acceleration means for both FIGS. 1 and 2 may be provided either
between electrode 16 and mass separator 22 or between electrodes 38
and target 20. The limiting apertures and systems design disclosed
herein can be used with other forms of mass separation, such as a
Wien filter (E.times.B) separator. The incident ions will also
possess a spread in energy and this energy spread will be
transformed by the mass separator into a transverse velocity
distribution: It is a purpose of the apertures to discriminate
against these ions having high transverse velocity at exit from
mass separation due to initial energy spread as well as those which
left the source with transverse thermal velocities.
The function of source 12 is to produce an ion beam of sufficiently
high current density as to produce the fine or narrow beam 32 since
most of the current is sheared off by aperture 30. Such sources
comprise duoplasmatrons, surface ionization sources, and electron
bombardment sources, among others.
The duoplasmatron employs an axial electron current flowing from a
cathode to an anode in which there is an aperture opening into an
expansion cup. A plasma column is formed and constricted by a
strong electric field from an intermediate electrode and by a
magnetic field which is inhomogenous, that is, it diverges in the
downstream direction. The plasma expands through the anode aperture
where the ion beam is extracted by a truncated conical
electrode.
In the surface ionization source, the vapor of the species to be
ionized is directed into a high work function surface which
captures the least bound electron. Ions and atoms are thermally
desorbed by maintaining the ionizing surface hot, in the region of
1,000.degree. K. to 2,000.degree. K., the ions being extracted and
focused into a beam by the application of the positive electric
field.
The electron bombardment-type ion source comprises a chamber into
which electrons are introduced at one end thereof by an electron
emitter. The electrons are caused to move axially with a
reciprocating motion and are confined to prevent radial expansion
by the use of an axial magnetic field. The gas to be ionized is
also introduced into the chamber and the atoms are ionized by
impact by the electrons. The chamber therefore fills with a plasma
and the ions are extracted from the chamber by application of a
negative extraction field through holes at another chamber end.
Mass separator 22, as stated above, functions to separate out
unwanted ion species and select the desired ion species. In order
to accomplish this purpose, the mass separator can comprise a pair
of large electromagnets placed about a beam conduit having a
predetermined curve. In order to accomplish the function of mass
separation, the magnetic field intensity of the magnets is changed
or the angle of the conduit is changed. Both these parameters
depend upon the energy of the incident ion beam which, in turn,
primarily depends on the potentials of source 12 and extraction
electrodes 14. The ion beam approaching the mass separator has a
specific energy in terms of its momentum and, since each ion
species has a different mass, the momentum of all ions included
within the beam, including the undesired beams, have particular
values of momentum. By adjusting the magnetic field intensity of
the magnets and by providing the conduit with a particular angle,
only those desired ions having a particular momentum will be bent
through the angle for supply to limiting aperture 28. All undesired
ion species will either make too great or too small a bend at the
angle and, consequently, will impact upon the sides of the conduit.
Damage from impact of ions into aperture plate 28 away from
aperture 30 is limited by making the aperture plate of such
potential that a deceleration field region is set up between the
deceleration reference electrode 26 and the aperture plate 28.
The angle of deflection is dependent upon the magnetic field
intensity and the energy of the incident ion beam, and this angle
may be measured in terms of the mass of the ion, m, and the
integral multiples of electron charge, g, as the ratio m/g. If this
value is large, the deflection angle is small and, conversely, if
the value is small, the deflection angle is large. Therefore, by
adjusting the m/g value to that of the desired ion species, only
that species will be bent about the desired angle.
Mass separator 22 may be further shaped so that the magnetic field
will affect the ion beam upon entrance and exit equally across the
cross section of the beam. Furthermore, the mass separator can be
so constructed that the exiting ion beam will be slightly divergent
in order to assist in separating out ions with high transverse
velocities.
As stated above, the deceleration region is established between
electrodes 26 and aperture plate 28 which is at a potential which
is near to and negative with respect to source 12. The respective
values of the source, the extractor electrodes, focusing lens 16,
the deceleration electrodes, and the limiting aperture are adjusted
to obtain maximum control of the ion beam. For example, if the
source were at a potential of 50 kv., the extractor electrodes
could be at a 40-kv. potential, the focusing at a 30-kv. potential,
the deceleration reference electrodes 26 at a 30-kv. potential, and
the limiting aperture plate 28 at slightly less than the source
potential, such as 49.95 kv. In this system, the remaining elements
of the system, focusing and accelerating lens 34, deflection
electrodes 36 and 38, and target 20 would be at ground. With such a
system, a small fraction of the beam, approximately 10.sup.
.sup.-5, passes through one or more tiny limiting apertures.
The above arrangement may be modified; for example, source 12 may
be at ground and target 20 at a high potential. In either case, the
final deflection of the beam must be very precisely controlled. It
may not be possible to obtain the desired precision if the
deflection amplifier is 50 kv. or greater below ground. Also, in
order to avoid precision regulation of the magnet current of the
separator 22, it may be necessary to limit the beam by two
apertures, as shown in FIG. 2, so that the slope of the ions
passing through the limiting aperture does not depend on the
magnetic field.
Although the invention has been described with reference to
particular embodiments thereof, is should be realized that various
changes and modifications may be made therein without departing
from the spirit and scope of the invention.
* * * * *