U.S. patent number 3,583,361 [Application Number 04/886,168] was granted by the patent office on 1971-06-08 for ion beam deposition system.
This patent grant is currently assigned to N/A. Invention is credited to Arthur Laudel, Jr..
United States Patent |
3,583,361 |
Laudel, Jr. |
June 8, 1971 |
ION BEAM DEPOSITION SYSTEM
Abstract
An ion-beam deposition system including means for providing
atoms of depositant material to an ionization region, first and
second means for injecting electrons into the ionization region to
ionize said depositant atoms, means for periodically and
individually energizing the first and second injecting means, and
means for extracting and accelerating ions from the ionization
region to a substrate.
Inventors: |
Laudel, Jr.; Arthur
(Leawood) |
Assignee: |
N/A (N/A)
|
Family
ID: |
25388521 |
Appl.
No.: |
04/886,168 |
Filed: |
December 18, 1969 |
Current U.S.
Class: |
118/723VE;
101/DIG.37; 148/DIG.45; 204/298.05; 219/121.15; 250/492.2;
148/DIG.6; 148/DIG.169; 219/121.25; 427/523 |
Current CPC
Class: |
C23C
14/221 (20130101); H01J 37/34 (20130101); Y10S
101/37 (20130101); Y10S 148/045 (20130101); Y10S
148/169 (20130101); Y10S 148/006 (20130101) |
Current International
Class: |
C23C
14/22 (20060101); H01J 37/34 (20060101); H01J
37/32 (20060101); C23c 013/12 () |
Field of
Search: |
;118/6,7,8,49.1,49.5
;219/121EB ;117/Inquired,93.4,93.44,200--233 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Kaplan; Morris
Claims
I claim:
1. A system for depositing ions on a substrate from an evacuated
ionization region comprising means for providing deposition atoms
to said ionization region, first and second means for injection
electrons into said ionization region for ionizing said deposition
atoms, means for periodically and individually energizing said
first and second injecting means, and means for extracting ions
from said ionization region and accelerating them to said
substrate.
2. The system of claim 1, wherein said first and second means are
positioned at spaced-apart locations about said ionization
region.
3. The system of claim 1, wherein said first and second means are
electron emissive cathodes.
4. The system of claim 1 wherein said deposition atom providing
means is an evaporation source.
5. The system of claim 1, including means for forming said ions
into a beam.
6. The system of claim 1 wherein part or all of said deposition
atom providing means is a gas.
7. The system of claim 1, in combination with charge neutralization
means at the substrate.
8. The system of claim 1 including means for producing a magnetic
field for improving ionization efficiency by increasing electron
path length.
Description
BACKGROUND OF INVENTION
Films or layers of material may be deposited on substrates by
various techniques, for example, vapor deposition, various types of
sputtering, and ion-beam deposition. Each of these techniques and
other related techniques may have certain advantages for particular
applications and in some cases may be combined to provide some
desired combination of advantages to achieve a particular finished
product.
Ion-beam deposition techniques generally provide the advantage of
obtaining good film adhesion by ion bombardment cleaning of the
substrate surface and ion penetration of substrate surface.
However, previous ion-beam deposition techniques and systems may be
limited as to the ion current output (e.g., deposition rate) to the
substrate, and therefore limited as to deposition rates, due to,
among other things, inherent ion losses within the system from
attraction by negatively biased electrodes required by the system.
If an attempt is made to control ion losses to biased electrodes,
very high extraction and acceleration voltages are used to draw the
ions from the ionization region before they are attracted to these
electrodes. Such high voltage acceleration and extraction voltages
increase the difficulties in controlling the ion beam and the
energies of the ions striking the substrate. For example, as the
acceleration voltage is increased, a greater portion of the ions
striking the substrate will serve to sputter off part of the
substrate rather than contribute to the deposition. It has been
found in many cases, that the extraction voltage gradient must be
so high to achieve ion extraction from the ionization region,
therefore, the extraction region itself must be small, and
deposition rates are at a low level.
Ion deposition systems which require high extraction and
acceleration voltages to overcome space charge and other electric
fields within the ionization region may accelerate ions against the
substrate with a wide range of energies. Such variations and
nonuniformities in ion energies do not permit control of deposited
film properties. Further, ions striking the substrate cause the
substrate to be heated. If a sufficient number of these ions are of
high energy, the substrate may be heated to a degree which may also
adversely affect the deposited film. Thus, it may be necessary to
cool the substrate, decrease the rate of deposition or decrease the
extraction and acceleration voltages. Maintaining high electric
fields in the presence of metal ions is very difficult because of
the insulation system which is required.
Many prior ion deposition system also require some type of carrier
gas to achieve ionization of the depositant material. Since the
carrier gas is also ionized, these gas ions may be accelerated to
the substrate and form a part of the deposited film. In many
applications, such gas deposition may be detrimental to the final
product.
SUMMARY OF INVENTION
In view of the limitations of the prior art as noted above, it is
an object of this invention to provide an ion-beam deposition
system capable of high ion current output and high efficiency with
low extraction and acceleration voltages.
It is a further object of this invention to provide an ion-beam
deposition which is capable of producing high ion currents and
uniform ion energies with a low extraction voltage.
It is a still further object of this invention to provide an
ion-beam deposition system with high ion current output without a
carrier gas under a vacuum.
Various other objects and advantages will appear from the following
description of embodiments of the invention, and the most novel
features will be particularly pointed out hereinafter in connection
with the appended claims. It will be understood that various
changes in the details, materials and arrangements of the parts,
which will herein be described and illustrated in order to explain
the nature of the invention, may be made by those skilled in the
art within the principles and scope of the invention.
The invention comprises an ion-beam deposition system in which ions
are produced for acceleration to and deposition on a substrate by
at least two electron sources periodically injecting electrons into
an ionization region against atoms of depositant material.
DESCRIPTION OF DRAWINGS
The present invention is illustrated in the accompanying drawing
wherein:
FIG. 1 is a diagrammatic view of an ion beam deposition system
incorporating this invention; and
FIG. 2 is a diagrammatic view in perspective of an alternate
embodiment of this invention.
DETAILED DESCRIPTION
FIG. 1 illustrates diagrammatically an ion-beam deposition system
which incorporates principles of this invention. It will be readily
apparent, that the various elements and apparatus utilized in this
system may be standard or conventional apparatus, such as
conventional thermionic filaments, grids, accelerating electrodes,
etc.
The ion-beam deposition system shown in FIG. 1 includes an
ionization region 10 disposed within a suitable container or bell
jar 12 which may be evacuated by a suitable vacuum pump 14 to some
desired level of vacuum, such as from about 10.sup..sup.-4 to
10.sup..sup.-10 Torr. A source 16 of depositant material 17 may be
disposed within bell jar 12 adjacent to the ionization region 10 to
provide atoms of the depositant material to region 10. At least a
first electron source 18 and a second electron source 20 may be
disposed at different and spaced-apart positions, such as at
opposite locations, about ionization region 10 to supply electrons
to region 10 and ionize atoms of the depositant material.
Additional electron sources or electron source pairs may be
positioned about ionization region 10 at different locations to
provide increased electron injection into region 10 and further
decrease ion attraction to electron sources. The ionized depositant
material may then be withdrawn from ionization region 10 and
accelerated to a suitable substrate 22 by extraction and
acceleration means 24.
Source 16 may be any conventional source which will evaporate or
otherwise provide atoms to ionization region 10. The source 16 is
illustrated as a conventional evaporation source or boat heated by
power supply 26.
Substrate 22 may be of any convenient or desired shape, cross
section or size and be made of either a nonconductive or conductive
material. As a conductive material, substrate 22 may form a part of
the accelerating means by biasing substrate 22 to an accelerating
voltage. On occasions, substrate 22 may be a nonconductor so that
the accelerating voltage may be applied by a power supply 28 to an
appropriately designed grid 30 which will permit the accelerated
ions to pass therethrough to substrate 22. For insulating
substrates, the ions tend to build up a charge which would prevent
additional deposition. To permit use of insulating substrates an
electron emitter 46 can be added in the region of the substrate and
be powered by power supply 44. The electrons are repelled by the
extraction grid and attracted by any charge buildup on the
substrate. The extraction field may be achieved by a separate grid
32 disposed adjacent ionization region 10 and energized by power
supply 28 to an extraction voltage. Grid 32 preferably is designed,
like grid 30, so as not to obstruct passage of ions through the
grid.
Electron sources 18 and 20, and any other sources used, may be
energized by power supply 34 so that each individual electron
source emits electrons at separate and alternating periods of time.
For example, electron sources 18 and 20 may be thermionic emitters
connected in series with power supply 34 which provides an
alternating current to the electron sources. With such an
arrangement the electron sources will alternately emit electrons
into the ionization region 10 and extract electrons therefrom,
alternately acting as a cathode and an anode. It will be clear,
that power supply 34 may be any appropriately controlled pulse,
square wave or the like source which periodically energizes the
electron sources. The frequency of energization should be selected
so that electrons emitted by a source have sufficient time to
traverse a major or sufficient portion of the ionization region to
ensure collision with an atom of depositant material without
permitting any of the depositant ions to be attracted to the
energized electron source. Thus, when the electrons travel into
ionization region 10, as shown by arrows 36, and ionize an atom of
depositant material, the depositant ion may have a path such as
shown by line 38 which is generally sinusoidal in shape as the
extraction voltage pulls the ion from region 10. It has been found
that the frequency of electron source energization may be varied
from about 40 Hz. to about 10,000 Hz. With a frequency greater than
10,000 Hz., the electrons may not traverse a sufficient portion of
region 10 whereas at less than 40 Hz., the ions may reach an
electron source before the bias changes. With such arrangement and
a source energization frequency of about 60 Hz., for copper
depositions, the extraction voltage may vary from about a -30 to
-130 volts DC with an acceleration voltage of between about -25 to
about -200 volts DC. Other depositant materials will require
approximately the same extraction and acceleration voltages. With
greater acceleration voltages, such as for copper of about -250
volts or more, a greater amount of substrate will be sputtered off
than depositant material deposited so as to provide a cleaning of
the substrate. The depositant can be all or partly a gas. For
example, aluminum can be evaporated while the appropriate partial
pressure of oxygen is being maintained and aluminum oxide be formed
at the substrate. Likewise, an aluminum film can be deposited, then
bombarded with oxygen to build an electrode covered with aluminum
oxide insulation.
The ion-beam deposition system of FIG. 1 may be operated by
evacuating, at least partially, bell jar 12 and then heating or
otherwise energizing the depositant material source 16 to supply
depositant material atoms to ionization region 10. If the absolute
pressure in the bell jar is above 10.sup..sup.-4 torr, there will
be significant amounts of residual as well as that which may be
intentionally introduced ambient gas entering the ionization region
and being deposited as impurities. Electron sources 18 and 20 may
thereafter be energized by power supply 34 in the appropriate
manner described above to alternately inject electrons into
ionization region 10 and ionize the atoms of depositant material.
In this FIGURE, it may be noted that the current from power supply
34 provides heating for electron sources 18 and 20 as well as
electron acceleration voltage. These two functions may be provided
by separate power supplies. These ions may then be extracted or
withdrawn from ionization region 10 by grid 32 and accelerated
against substrate 22 by grid 30. Since the extraction voltage does
not have to pull the ions away from and overcome the electric field
produced by the energized electron sources which are varying in
polarity, the extraction and acceleration voltages may be kept at a
low level. It will be clear that an initial acceleration voltage
may be selected which may accelerate depositant ions with
sufficient energy to clean substrate 22. The acceleration voltage
may then be decreased to form the desired deposit.
This configuration, having at least two electron sources which are
reversed periodically, may neutralize the field produced by the
ions and prevent the electron sources from extracting ions to
provide a relatively low net charge in the ionization region and
prevent space charge limitations. The present system may produce
ion beams of from about 10 to 500 milliamperes intensity to provide
deposition rates from about 5 to 250 angstroms per second. Due to
the cleanliness of the substrate as a result of ion beam cleaning
and from the vacuum environment and ion deposition, this system
provides well formed, and highly adhesive deposition films. The
cleaning agent can be the same as the depositant thus assuring high
purity. Further, the substrate temperature may be kept at a
relatively low temperature without decreasing beam current.
It may be desirable in some applications to provide a greater
percentage of ions to atoms in the depositing film. This may be
accomplished, by utilizing some form of ion beam deflection as the
ions are extracted from ionization region 10. Such an ion-beam
deflection may be achieved with a magnetic field applied parallel
to the electric field between electron sources 18 and 20, or by
placing the extraction grid at an angle other then 90.degree. with
respect to the initial path of atoms from source 16, as shown by
the embodiment shown in FIG. 2. The ion beam extracted from the
ionization region 10, may be collimated and focused by suitable
biased collimating electrodes 40.
The electrical leads for electron sources 18 and 20 may inherently
generate certain stray magnetic fields which may effect some form
of magnetic magnification of electron paths, enhancing ionization
in the systems of FIG. 1 and FIG. 2. It may be desirable in certain
applications to increase this magnification to increase the
percentage of ionization of the depositant material atoms. This may
be accomplished by applying an alternating magnetic field
perpendicular to the initial path of the depositant material atoms
provided by source 16 and perpendicular to the electric field of
the electron sources, as shown by the dotted lines 42 outlining a
magnetic coil. The magnetic field, for greatest extraction
efficiency, may have to alternate in phase with the electric field
of the electron sources.
* * * * *