U.S. patent number 3,568,105 [Application Number 04/803,793] was granted by the patent office on 1971-03-02 for microstrip phase shifter having switchable path lengths.
This patent grant is currently assigned to International Telephone and Telegraph Corporation. Invention is credited to Robert A. Felsenheld.
United States Patent |
3,568,105 |
Felsenheld |
March 2, 1971 |
MICROSTRIP PHASE SHIFTER HAVING SWITCHABLE PATH LENGTHS
Abstract
A microstrip phase shifter is inserted in a waveguide aperture,
the phase shifting network consists of lightweight transmission
line sections which can be switched by microwave diodes to provide
the required phase shift. The diodes are switched in pairs, forward
or back biased, so that the wave will traverse through a given path
to complete the phase shifting according to the switched pair of
the diodes.
Inventors: |
Felsenheld; Robert A.
(Livingston, NJ) |
Assignee: |
International Telephone and
Telegraph Corporation (Nutley, NJ)
|
Family
ID: |
25187436 |
Appl.
No.: |
04/803,793 |
Filed: |
March 3, 1969 |
Current U.S.
Class: |
333/161;
333/164 |
Current CPC
Class: |
H01P
1/185 (20130101) |
Current International
Class: |
H01P
1/18 (20060101); H01P 1/185 (20060101); H01p
001/10 (); H01p 001/18 () |
Field of
Search: |
;333/31,84 (M)/
;333/7 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Gensler; Paul L.
Claims
I claim:
1. A phase shifter comprising:
first and second fixed length paths forming a first junction;
a shunting path across said first junction;
a quarter-wave stub coupled to each of said first and second fixed
length paths;
a first switchable device located at said first junction;
a second switchable device coupled between said shunting path and a
shorting plane; and
means coupled for switching said first and second devices from one
state to another, said means including a source of bias voltage
coupled to one of said stubs, a first capacitor coupled to the bias
voltage stub, and a second capacitor located in said shunting path,
whereby RF energy is caused to follow a fixed length path or an
extra length path formed by said shunting path.
2. A phase shifter according to claim 1 wherein said first and
second switchable devices are diodes.
3. A phase shifter according to claim 2, wherein said bias voltage
applied to said bias stub causes said first and second diodes to be
simultaneously forward or backbiased.
4. A phase shifter according to claim 3, wherein said bias stub is
coupled to said shorting plane by said first capacitor, and said
stub connected to said second fixed path is coupled directly to
said shorting plane, whereby when said diodes are forward biased
said phase shifter emulates quarter-wave lines.
5. A phase shifting array, each section of the array
comprising:
a first junction formed by first and second fixed length paths;
a shunting path across said first junction to provide the phase
shift in electrical degrees for each section;
a pair of quarter-wave stubs, each coupled to one of said first and
second fixed length paths;
a first solid state device located at said first junction;
a second solid state device coupled between said shunting path and
a common shorting plane; and
means for switching said first and second devices from one biased
state to another, said means includes a source of bias voltage
coupled to one of said stubs, a first capacitor coupled to the bias
voltage stub, and a second capacitor positioned within said
shunting path, whereby RF energy is caused to follow in response to
said switching a fixed length path or an extra length path formed
by said shunting path.
6. A phase shifting array according to claim 5 wherein said first
and second solid-state devices are diodes.
7. A phase shifting array according to claim 6 wherein said bias
voltage applied to said bias stub causes said first and second
diodes to be simultaneously forward or backbiased.
8. A phase shifting array according to claim 7 wherein said bias
stub is coupled to said common shorting plane by said first
capacitor, and said stub connected to said second fixed path is
directly coupled to said common shorting plane, whereby when said
diodes are forward biased this phase shifting section emulates
quarter-wave lines.
Description
BACKGROUND OF THE INVENTION
In general this invention relates to microstrip phase shifters, and
more particularly to transmissive-type phase shifters.
Transmissive phase shifters provide a fixed-length transmission
line path through the phase shifter which has active switching
junctions at intervals along its length where additional line
lengths may be added. The addition of one incremental length does
not depend in any way upon the addition of any length since the
wave does not traverse unused paths. All phase shift increments are
truly independent. A small number of different increments having a
binary relationship may be combined in various ways to obtain many
different values of phase shift in binary steps. Transmissive phase
shifters use fewer diodes, use them at lower stresses, and require
less closely held tolerances than tandem reflective-type phase
shifters. Transmissive phase shifters also utilize diodes under
conditions of good match during the steady state.
Since there is a need for improved transmissive phase shifters,
there is provided according to the invention a new two-diode per
section transmissive phase shifter as hereinafter described.
SUMMARY OF THE INVENTION
It is an object of this invention to provide a microstrip phase
shifter.
It is another object of this invention to provide a two-diode per
section transmissive phase shifter.
A feature of this invention is to provide a binary phase shifting
network, the phase shifting network consisting of lightweight
printed transmission line sections which will be switched by
microwave diodes to provide 0 to 360.degree.of phase shift, a
typical phase shifting section consisting of two diodes, one
capacitor, and a biasing means.
A microstrip phase shifter is provided in a waveguide aperture, the
phase shifting network consisting of lightweight printed
transmission line sections which are switched by microwave diodes
to provide the proper phase shift; the diodes are shifted in pairs,
forward or back-biased, whereby when the diodes are forward biased
the wave provides straight through fixed length paths and does not
traverse an extra length of transmission line, and whereby when a
reverse bias is applied the wave will traverse the extra length of
transmission line and provide the proper phase shift through the
network.
BRIEF DESCRIPTION OF THE DRAWINGS
The foregoing and the following detailed description will be better
understood as reference is made to the following drawings in
which:
FIG. 1 shows a preferred embodiment of a two-diode per section s
phase shifter;
FIG. 2 illustrates a microstrip phase shifter positioned in a
waveguide aperture;
FIG. 3 illustrates a typical array element microstrip phase shifter
incorporating the features of the invention; and
FIG. 4 illustrates a binary phase shifter network utilizing the
invention which will provide 0 to 360 of phase shift in increments
of 22.5.degree..
DESCRIPTION OF THE PREFERRED EMBODIMENT
Referring now to FIG. 1, there is shown a two diode junction phase
shifter. Junctions A & B are a portion of a straight-through
fixed length path 11, 12. An extra length path 13 of a transmission
line in the form of a loop is added by proper switching of the
diodes 14, 15. Both junctions A, B employ quarter waves stubs 16,
17, and capacitors 18, 19 in the standard manner so that biasing
voltages may be applied at 16 and the diodes operated in proper
sequence. The extra length path 13 is the phase shift in electrical
degrees and includes a matching taper section 20 coupling the
signal to fixed length path 12.
IN this embodiment, both diodes 14, 15 are biased forward or
backward simultaneously. When the diodes are forward biased by a
bias voltage applied to stub 16, the wave proceeds down the fixed
length path 11, 12 and does not traverse the loop 13, because an
incremental short-circuited line section 21 which is added to
halves of the loop CA & CB to form quarter wave lines EDCA and
EDCB. This isolates these lines even though they are conductively
connected to the straight through line at points A & B. Since
points A & B are effectively equipotential and equiphase when
diode 14 is conducting, the phase shift loop appears as an open
circuit, and is isolated from the main line. The two-diode phase
shift section shown requires only one bias voltage, two diodes, and
two capacitors per phase shift section. This array is placed on an
insulating microstrip 22, the components may be integrated with the
array or placed at another position and coupled by appropriate
leads through a waveguide as shown in FIG. 2.
Referring now to FIG. 2, a section 23 of a waveguide containing a
microstrip phase shifter 24 is shown. The microstrip elements are
held in position within the rectangular guide by the retaining
means 25 (shown in dashed-lines) and terminal means 26 are added to
the guide 23 to provide suitable connections for the bias voltages
and the components.
The received energy, propagating within the rectangular waveguide,
will couple into a microstrip binary phase shifter through a
printed dipole-to-microstrip transducer as shown in FIG. 3, wherein
one side 24a forms the ground plane of the dipole, and the other
side 24b forms the phase shifting array. The two sides 24 a, b of
the microstrip form the dipole transducer so that the energy may be
intercepted and phase shifted according to the diodes switched in
the array. The retaining means 25 may also serve as the shorting
plane for the array.
A typical binary phase shifting network utilizing the concept of
FIG. 1 is placed on a microstrip board as shown in detail in FIG.
4. This phase shift network consists of printed transmission line
sections having microwave diodes to provide 0 to 360
360.degree.phase shift in increments of 22.5.degree.. This network
provides four discrete phase shifts of 22.5.degree., 45, 90, and
180.degree. which can be added in any combination through switching
of the diodes CR1 to CR8 to achieve the required phase shift. Each
of the phase shifting sections consists of two diodes i.e.
CR.sub.4,CR.sub.5, two capacitors i.e. C.sub.4,C.sub.6, a bias
quarter wave stub and a grounded quarter wave stub. For example
when diode CR.sub.8 is forwarded biased to present a low impedance,
energy will follow path AB. Conversely, when diode CR.sub.8 is
reverse biased to present high impedance, the RF energy will follow
path ACB and a 180.degree. phase shift equal to the difference in
path lengths will be obtained at point B. When diode CR8 is forward
biased it is shunted by the loop of path ACB. Some of the energy
will flow through this loop and cause a high standing wave ratio
unless proper circuit compensation is provided. To reduce adverse
effects on the transmission line, when diode CR.sub.8 is
conducting, a high impedance at points A & B is provided by an
electrical RF ground placed a quarter wave length one-quarter from
both points A & B.
Diode CR.sub.1 placed between points C & D is biased in the
forward direction to create quarter-wavelength paths ACD and BCD.
With both diodes biased in the forward direction, the phase shift
section together with the switched in line sections will appear
appear as a high impedance at points A & B. The biasing network
will not change the RF characteristics of the phasing line. The
bias for the diodes is supplied through quarter wavelength stubs,
the capacitors are required to isolate the terminals of the diodes
from DC ground and provide an RF bypass. The complete phase shift
network of FIG. 4 consists of eight diodes and nine capacitors. The
effect of the insertion loss of these components on the complete
phase network will be small because only five of the 17 components
are in series with an antenna at a given time. The base material
(i.e. teflon fiberglass laminate, tellon) for the baseboard circuit
can keep this loss at a minimum.
By properly selecting the bias to each section, the phase shift
through the array of FIG. 4 can be controlled in the illustrated
increments.
Accordingly, there has been described a microstrip phase shifter
which is inserted in a waveguide aperture, the phase shifting
network comprises printed transmission lines sections which are
switched by microwave diodes to provide a desired phase shift.
Diodes in a particular section are switched in pairs, such that
they are both forward or back biased. When the diodes are forward
biased, the wave proceeds straight through a fixed length path and
does not transverse a shunted loop path since the section emulates
quarter-wave lines. When the diodes are reversed biased the waves
will follow the longer shunted path to provide a corresponding
electrical shift in degrees in accordance with the length and shape
of the path. A complete phase shift network is thus provided in
this manner illustrated in FIGS. 1 through 4.
Although I have described above a microstrip phase shifter which is
designed to be inserted into a wave guide aperture, it should be
clearly understood that this novel type phase shifter is clearly
suitable in any phase shifting application.
* * * * *