U.S. patent number 3,554,512 [Application Number 04/809,623] was granted by the patent office on 1971-01-12 for crucible for holding molten semiconductor materials.
Invention is credited to George H. Elliott, Leonard F. Roman.
United States Patent |
3,554,512 |
Elliott , et al. |
January 12, 1971 |
CRUCIBLE FOR HOLDING MOLTEN SEMICONDUCTOR MATERIALS
Abstract
A crucible is disclosed herein for holding a source material in
which a portion thereof is to be melted including a crucible body
forming a heat sink composed of material having sufficient
electrical and thermal conductivity adapted for operation as an
element of an electrical circuit and being formed with a
hemispherical recess for confining the source material. Means are
provided for recirculating a coolant through the body which is
slidably mounted on a base by a mating ribbed and grooved
construction therebetween so as to form a thermal transmission path
for dissipating maximum heat into the base constituting a portion
of the total heat sink.
Inventors: |
Elliott; George H. (Grande
Hill, CA), Roman; Leonard F. (North Hollywood, CA) |
Family
ID: |
25201813 |
Appl.
No.: |
04/809,623 |
Filed: |
March 24, 1969 |
Current U.S.
Class: |
432/233; 165/169;
219/121.21; 219/420; 266/275; 432/31; 432/205; 432/264; 432/156;
118/726; 219/121.16; 219/121.33; 373/11; 432/92; 432/227 |
Current CPC
Class: |
C23C
14/30 (20130101); C30B 35/002 (20130101); C23C
14/243 (20130101) |
Current International
Class: |
C23C
14/30 (20060101); C23C 14/28 (20060101); C30B
35/00 (20060101); C23C 14/24 (20060101); F27b
014/10 () |
Field of
Search: |
;219/420,121,421--2--8,347--3,121 ;13/31,25 ;118/49.5 ;263/48
;165/168,169 ;126/284,343.5 ;22/79 ;266/39,34 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Mayewsky; Volodymyr Y.
Claims
We claim:
1. A crucible apparatus for holding molten source material within a
vacuum apparatus comprising:
a crucible body formed of a material which is of sufficient
electrical and thermal conductivity so as to be adapted for
operation as an element in an electrical circuit and as a heat
sink;
said crucible body having a hemispherical recess formed therein for
confining a quantity of the source material;
a chromium liner disposed on said hemispherical recess separating
said crucible body from the source material;
means for recirculating a cooling agent through said crucible body
during the melting of the source material to maintain the
temperature of said crucible body below its melting temperature and
below the temperature of the source material melt thereby
maintaining said chromium liner in a solidified state and
preventing fusion of the melt to said chromium liner; and
said crucible body having a pair of portions movable relative to
each other, a first portion formed with said hemispherical recess
and a second portion supporting said first portion by a thermal
compression interlock that connects said portions together.
2. The invention as defined in claim 1 wherein said chromium liner
is operable as an optical heater in response to the presence of
heat at the surface center of the source material melt which is
reflected back to the surface center so as to augment heating of
the source material.
3. The invention as defined in claim 1 wherein said crucible body
is additionally formed with at least one other hemispherical recess
for holding a quantity of source material of a different
conductivity type than the source material confined in said first
mentioned hemispherical recess; and
actuating means operably connected to said first portion of said
crucible body for selectively locating a selected one of said
hemispherical recesses so that the surface center of the source
material held therein will lie substantially along the central
vertical axis of the vacuum apparatus.
4. The invention as defined in claim 3 wherein said actuating means
includes a lead screw mechanism operably coupled between said
crucible body and the vacuum apparatus and having means located
externally of the vacuum apparatus for manually operating said
mechanism so as to locate said selected one of said hemispherical
recesses to an alternate position without the necessity of breaking
the ultrahigh vacuum created in the vacuum apparatus.
5. The invention as defined in claim 4 wherein said crucible body
first portion constitutes a base fixedly supported on the vacuum
apparatus and said second portion of said crucible body movably
carried on said base and wherein said recirculating means include
longitudinal passageways provided in said base for conducting said
cooling agent therethrough.
6. The invention as defined in claim 5 wherein said first portion
of said crucible body is slidably mounted on said base by
correspondingly mated ribs and grooves formed in respective
opposing and adjacent surfaces thereof constituting an
interconnection construction defining said thermal compression
interlock having high thermal energy transfer characteristics so
that said base serves as an efficient heat sink.
7. A crucible apparatus for holding molten source material within a
vacuum environment comprising:
a crucible body formed of a material which is electrically and
thermally conductive so as to be adapted for operation as an
element in an electrical circuit and being further formed with a
plurality of hemispherical recesses adapted to hold quantities of
source materials of different conductivity types;
a fixed base for movably supporting said crucible body so that a
selected hemispherical recess can be located in a predetermined
position within said vacuum environment;
means for recirculating a cooling agent through said base whereby
said base and said crucible body cooperate as a heat sink for
dissipating heat of the source material; and
an interconnection construction movably coupling said crucible body
to said base constituting a thermal energy transmission path
therebetween whereby maximum heat gradients are transferred from
said crucible body to said base eliminating diffusion of material
from said crucible body into the source material.
8. The invention as defined in claim 7 wherein said interconnection
construction includes a plurality of elongated grooves and ribs
formed in each of the opposing and contacting surfaces of adjacent
sides of said crucible body and said base and wherein said
plurality of grooves and ribs of the respective surfaces are mated
together in frictional contact to provide maximum high pressure
surface contact therebetween.
9. The invention as defined in claim 8 including means coupled to
said crucible body for selectively moving said crucible body with
respect to said base without the necessity of breaking the vacuum
environment.
10. The invention as defined in claim 9 wherein each of said
plurality of recesses are provided with a chromium liner
corresponding to the hemispherical contour thereof adapted to
separate the source material from said crucible body and operable
as an optical heater whereby radiant heat from the source material
melt at the surface center thereof is reflected back to the surface
center to augment heating of the source material.
11. The invention as defined in claim 8 wherein said
interconnection construction forms a thermal compression lock
between said mated ribs and grooves.
12. The invention as defined in claim 7 wherein said
interconnection construction provides a thermal expansion
differential between said crucible body and said base which creates
a thermal compression interlock that physically connects said
crucible body and said base together and further provides a low
series thermal resistance to said cooling agent.
Description
CROSS REFERENCE TO RELATED APPLICATION
In order to best explain some of the prior art in connection with
examples of usage employing the present invention, some of the
disclosure is reproduced herein from copending application for U.S.
Pat. identified by application entitled "Apparatus and Method for
Effecting the Restructuring of Materials" having Ser. No. 559,198,
filed June 21, 1966, now Pat. No. 3,437,734, by Leonard F. Roman
and George H. Elliott. The present application is considered to be
copending with the former application and is hereby
cross-referenced therewith.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to apparatus and methods for
restructuring materials and, more particularly, to a crucible for
holding molten semiconductor materials of highest purity having
liquid and mechanical means for effecting heat dissipation so that
the molten portion of the semiconductor material is positively
controlled in its confinement.
2. Description of the Prior Art
As the usefulness of electronic components, circuits and systems
having extremely small or minute orders of magnitude has expanded
from strictly component oriented problems to problems of
microminiaturization incorporating function oriented approaches in
which semiconductor material is restructured to obtain desired
functions, and with the widening demand, both militarily and
commercially, for system and component microminiaturization capable
of dealing with problems of heat dissipation, interconnections and
signal interactions, the need for economic production of high
density electronic packaging has become of increasing importance. A
concomitant of this trend is the need for actual producibility of
wider classes of function which, while providing the requisite
component density, maintains both system reliability and
servicability. Under the thrust of this expanding use, it has
become an economic necessity to provide a minimum number of circuit
interconnections for microminiaturized components and systems which
both minimizes the possibility of error under operating conditions
and reduces overall system complexity.
With increase in component density, the reliability of circuit
interconnecting means has become of paramount significance.
Particularly, this is true with regard to the design, construction
and interconnection of circuit components and assemblages which
carry out the basic work function of complex electronics equipment
such as data processing systems. Conventionally, the electrical
circuit network employed in such systems generally comprise a
plurality of logic circuits such as "gates" and "flip-flops"
interconnected to form an electronic complex designed to carry out
the various arithmetical and logical functions for which the
equipment is programmed. These aforementioned components and basic
circuits lend themselves to compact arrangement by placing
circuits, subcircuits or functioning stages on a single wafer or
substrate. Many efforts have been expended in performing this
approach by employing thin-film where there is usually a one-to-one
correlation between the components in the thin-film manufacture by
reactive deposition, evaporation, sputtering, photolithographic
techniques, etching and many combinations of passive
components.
A particularly new approach to building solid-state circuits
resides in the contiguous deposition of single crystal silicon
layers on a single crystal silicon substrate by employing epitaxial
vapor-growth methods. Laminar layers formed in this process can be
controlled in conductivity type, resistivity and thickness. By
combining this technique with oxide masking, diffusion and alloying
techniques, these deposited configurations can be made into
microcircuits. Although vapor deposited semiconductor films are old
in the prior art, most methods involve a volatile compound of the
coating material which is reduced or decomposed on a heated
substrate. Obviously, the disassociation must take place at the
substrate only and at a temperature below the melting point of film
and substrate. Current interests in the electronics industry
employing vapor deposition processes are generally divided into two
techniques which have been explored for carrying the volatile
compound to the substrate. One technique is generally referred to
as the "close-open tube process" which utilizes a carrier gas which
streams through the system with a constant flow rate. On the other
hand, another technique is referred to as a "closed system" in
which the vapor transport is caused by convection currents between
the cooler portion of the system containing source material, and
the hotter section which supports the substrate.
The only known process for producing thin layers of silicon
material suitable for active device application on insulating
substrates is the vapor decomposition of silicon tetrachloride at
high temperature directly on sapphire substrates which involves
several chemical steps between the silicon and the aluminum oxide
surface. The cost of sapphire and the ability to obtain a true
crystalline surface has kept this process from finding wide
acceptance.
Other vacuum methods used to deposit silicon which, however, are
not suitable for active device application include the sputtering
process which is a method of glow discharge bombardment of a source
of material in an inert gas atmosphere effective to sputter
dislodged material on a target. Many close proximity techniques
have been tried for evaporative processes in order to minimize
contamination levels; however, very limited results have been
obtained.
Ion plating, which is a form of the evaporative process utilizes a
directed transport technique and has been used for inactive metals
such as iron, aluminum etc. This plating process can deposit, on
occasion, extremely coherent films; however, the ionization
techniques used for these processes will generally not function in
the ultrahigh vacuum range and they are thereby rendered useless
for silicon deposition. Essentially, the ion plating process
includes a source of ions which performs the function of reducing
the base source material to a gas or cloud, putting it in such
condition that it can be transported, further includes a so-called
crystallization or target region with or without associated
orientation equipment, and finally includes a transport means for
transporting the material from the ionizer to a substrate located
within or at the crystallization region.
However, difficulties and problems have been encountered when
employing conventional vapor deposition equipment and methods since
such conventional equipment cannot provide a clean environment and
maintain the purity of the vaporized material to the degree that is
required for active semiconductor thin-film work because the ion
plating techniques will not function in the ultrahigh vacuum range.
An additional problem encountered with the conventional practice
resides in the fact that some source materials, such as silicon for
example, are extremely difficult to confine in a molten or liquid
condition. Unless the source material can be held in such a
condition, it is difficult, if not impossible, to create a vapor
cloud capable of performing the process. Extreme purity of the melt
is a basic requirement in the handling of silicon, especially for
the restructuring of semiconductor crystals. An ancillary problem
resides in the fact that the use of crucibles introduces the danger
of contamination entering into the melt from the material of the
crucible due to an insufficiency of thermoenergy transfer.
Considerable technical expenditure has been employed to develop
so-called "crucible-free" methods in an effort to circumvent this
danger. Thus, for example, crucibles for melting silicon of highest
purity have been tried that were made of SiO.sub.2, BeO,
A1.sub.2O.sub.3, or made of similar high-melting material
indifferent to silicon, such as carbides of titanium or zirconium
and the like, which are lined on the inside of these materials.
However, completely satisfactory results could not be achieved,
because these materials always caused contamination of the melt,
however slight such contamination might be.
SUMMARY OF THE INVENTION
Accordingly, these difficulties and problems encountered with
conventional crucibles are obviated by the present invention which
provides a novel crucible for confining molten source material at
elevated temperatures, such as at 1,700.degree. C. for example,
without effecting diffusion between the source material and the
crucible material or contaminating the source material per se. The
crucible is adapted to hold a plurality of different semiconductor
source materials and is particularly suitable for melting silicon
of highest purity which completely excludes the danger of
contamination resulting from the crucible material. The crucibles
may be used when a method is employed for heating the source in
which the required heat is not transmitted to the melt by
conduction of the crucible wall but in the melt itself, by
radiation or by high frequency thermal energy.
Accordingly, the present invention may be used for the melting of
highly pure silicon or other semiconductor material, preferably for
electrical purposes, for example, electronic components represented
by diodes, rectifiers or transistors, wherein the crucible is made
of thermally conductive material with a melting point under that of
the source material. The crucible body is formed with a
hemispherical recess in which a layer of the semiconductor source
material is seated and which is sufficiently thick so that the melt
of the source material is held by the layer. The crucible body is
cooled by means of a cooling agent to such an extent that the
temperature in the material of the crucible recess and the
contacting layer of source material will be under the melting
temperature of the source material and of the material of the
crucible body. The crucible body is slidably mounted on a base and
interconnection is made by means of alternate elongated ribs and
grooves so that thermal pressure contact is produced over the
complete groove side area even in the presence of anomalies
existing in the parts such as may be represented by minor dents,
warps or contamination not visible to the eye. These anomalies
sometimes cause high pressure points which reduce the probability
of achieving thermal energy transfer at the interface of the body
and base surfaces.
Therefore, it is a primary object of the present invention to
provide a novel crucible for melting semiconductor material of
highest purity which obviates the danger of contamination resulting
from the crucible material.
Another object of the present invention is to provide a novel
crucible having a plurality of recesses adapted to hold
semiconductor material of different conductivity characteristics
whereby a selected source material of the plurality may be
selectively heated to the exclusion of the other source
material.
Another object of the present invention is to provide a novel
crucible having improved thermal energy transferring
characteristics such that source materials requiring extremely
elevated melting temperatures can be readily handled without
adverse reaction of the crucible material upon the source
material.
BRIEF DESCRIPTION OF THE DRAWINGS
It should be noted that the following detailed description and the
accompanying drawings are merely intended as being illustrative of
the invention and not as a limitation thereon. Furthermore, in the
following drawings, reference numerals shall be carried forward
where applicable to designate like parts of the invention. The
invention itself will be best understood when read in connection
with the accompanying drawings in which:
FIG. 1 is a front elevational view of a vacuum chamber partially
broken away to expose the novel crucible of the present
invention;
FIG. 2 is an enlarged perspective view of the crucible shown in
FIG. 1;
FIG. 3 is an enlarged top plan view of the crucible illustrated in
FIG. 2 partially broken away to show ribbed and grooved interface
construction; and
FIG. 4 is a cross-sectional view of the crucible illustrated in
FIG. 3 as taken in the direction of arrows 4-4 thereof.
Referring to FIG. 1, a side elevational view of a vacuum apparatus
is illustrated in the general direction of arrow 10 which is
mounted on a base 11 supported on a suitable flooring 12. A glass
enclosed chamber 13 confines the vacuum area in which the vapor
deposition process is practiced and the glass chamber 13 is
suitably supported onto the upper edge of base 11. The base 11 is
provided with various conduits and plumbing communicating the
vacuum chamber exteriorly of the base that are necessary to effect
an ultrahigh vacuum within the chamber 13. Located about the lower
periphery of the base 11, there is provided a plurality of magnets
14 which are employed in a conventional vacuum system. Suitably
carried about the vacuum chamber 13, there is provided a protective
screen or grate 15 which offers protection in the event the glass
portion of the vacuum chamber should shatter.
Pursuant to the teachings of the above mentioned copending
application, a toroidal electromagnet 16 is disposed about the
vacuum chamber 13 in a coaxial relationship therewith. A removable
flat lid or cover 17 is removably fastened to the upper periphery
of the chamber 13. In this manner, the lid 17 may be removed from
the supporting annular wall of the chamber so that the various
elements and components held within the chamber may be worked upon
and so that repair and maintenance may be readily achieved. The lid
or cover 17 is provided with a plurality of covered passageways
blocked by removable plates 18 which may be employed to mount and
hold a variety of work supporting fixtures, if desired.
Within the vacuum chamber 13, there is provided an ionizing means
20 arranged in coaxial relationship with an electrical transport
means 21 which are arranged over and in coaxial relationship with
an electron heating source 22 which is described in more detail in
the above-mentioned copending application.
Still within the vacuum chamber and located immediately below the
ionizer means 20 and heating means 22, there is provided a crucible
apparatus in the direction of arrow 23 for holding a quantity of
source material intended to be restructured onto a substrate or
target carried on a support member of fixture (not shown) at the
top of the vacuum chamber 13. The electron heating source means 22
supplies a steady stream of electrons focused to strike at the
center of the source material carried by a selected crucible 24 so
that the electron bombardment of the source material contained
within the crucible will cause the rapid melting thereof. The
crucible 24 is slidably carried on a base 25 which is supported on
the inside of the vacuum chamber by means of brackets 26 and 27.
External drive means are provided for manually positioning the
crucible 24 on the base 25 in its vacuum environment which include
a lead-screw system as one embodiment thereof operable by a handle
28 located exteriorly of the vacuum base 11. To augment the vacuum
system, a heater element 28 is illustrated as being cantilevered
inwardly from the wall of the base 11 below the crucible apparatus
23. Also, a pan 30 is shown mounted on the underside of the base 25
which may serve as a "getter" in removing contaminants during
pumpdown by the vacuum system.
Referring now to FIG. 2, a more detailed description of the source
material crucible apparatus 23 will be presented as well as further
elaboration on the problem and difficulties encountered with prior
art crucibles. Extreme purity of the melt is a basic requirement in
the melting of the source material, especially silicon, for the
production of semiconductor crystals. The use of crucibles
introduces the danger of contamination entering into the melt from
the material of the crucible. One method for circumventing this
danger is disclosed in U.S. Pat. No. 3,051,555 by providing a
crucible made of copper material having a melting point lying under
that of the melt. The crucible body is lined on the inside thereof
with a layer or coating of purest silicon. A cooling agent is
circulated through the crucible body to cool same. However,
completely satisfactory results are not achieved employing this
method because of the extremely high temperature required to
vaporize silicon as a source material at any appreciable rate. For
example, a temperature of approximately 1,700.degree. C. is
required to vaporize silicon for any practical applications
employing methods for crystalline growth. Under such a condition,
it has been found that the body material of the crucible,
particularly copper, will diffuse with the edge of the silicon
liner. A temperature range of approximately 800.degree. C. to
1000.degree. C. is present at the areas of contact between the
silicon and copper which represents the diffusion range for silicon
so that slowly, copper will diffuse from the crucible heat sink
into the silicon source material being vaporized. Also, under such
high temperature conditions, the silicon liner, whether it be pure
silicon or a silicon oxide, has a tendency to discolor which
adversely affects the concentration of heat at the center of the
source material when the source material is held in a crucible.
Because silicon is transparent to heat, the heat created at the
point of vaporization is transmitted to the surface of the crucible
holding the source material where the heat should be reflected back
to the melt which complements the creation of heat at the
vaporization point. However, the discolored surface or liner
separating the crucible from the source material will not
efficiently reflect the transmitted heat and therefore a heat loss
is encountered at the vaporization point where it is most desirable
to create maximum heat. An optically correct shape of the crucible
is required to efficiently obtain maximum temperature. Running
water through the body of the crucible for cooling purposes
necessitates that the crucible itself become a permanent or
semipermanent fixture of the process chamber making it difficult to
replace, move or shoot multiple materials.
These problems are overcome by the novel crucible of the present
invention wherein an embodiment of a crucible for melting a source
material 70, such as silicon, is shown represented by numeral 24
which indicates a copper crucible body provided with a plated
polished chrome liner 31 disposed within a hemispherical recess 32.
The silicon source material is seated within the hemispherical
chrome liner 31 and preferably has a relatively flat continuous
surface having its center on the major vertical axis of the vacuum
chamber.
The crucible 24 is maintained at a relatively cool temperature,
preferably under 350.degree. C. by utilizing a novel thermal
compression coupling technique allowing the sources to be moved
under the electron bombardment source and interchanged with other
sources without flexing water lines or elaborate bellows
arrangement. The thermal energy is coupled to a large water cooled
copper heat sink, which is grooved to match the grooved copper
crucibles. Extremely high pressure copper-to-copper contact
efficiently transfers the excess thermal energy to the water
coolant. The very high pressure contact is achieved by utilizing
the thermal expansion of the crucible against the much cooler heat
sink grooves. When the crucible cools below 150.degree. C. it can
be easily moved from under the electron bombardment source and a
new source material put in its place by a simple external drive
mechanism. Because of the reflected surface offered by the chrome
liner, shown more clearly in FIG. 4, the silicon source material
has a thermal gradient extending from the liner to the molten
region at the center of material surface. Inasmuch as the crucible
is hemispherical, the thermal gradient in all directions will act
as the line of focusing toward the center of the sphere in the
melting region. Preferably, the hemispherical diameter as
illustrated represents 2 3/4 inches. By directing a high intensity
electron beam from the heating source 22 at the center of the
source material surface, intense local heat at the desired
temperature is created to melt the source material for
vaporization. The advantage of using the hemispherical heat sink
with a correspondingly configured liner resides in the fact that an
optical heater is constructed in addition to the electron heater
whereby the energy which is radiated toward the polished surface of
the chrome liner 31 is reflected back to the local heat point at
the surface center of the source material to aid in creating the
intense local heat to effect vaporization of the source
material.
The crucible apparatus 23 shown in FIG. 2 includes three crucibles
with the center crucible identified by numeral 24; however, it is
to be understood that although crucible 24 will be described in
detail and is the inner or middle crucible of the three, the other
crucibles are identical in construction to crucible 24. As
mentioned earlier, the crucibles are slidably mounted on base 25 by
means of a novel interconnection means between the bottom of the
crucible and the upper surface of the base 25. The interconnection
construction will be described later.
The object of movably mounting the crucibles on the base resides in
the fact that different semiconductor materials, such as those
having different electrical conductivity characteristics, can be
held within the respective recesses of each of the crucibles and
when the crucibles are moved so that a selected one resides in a
coaxial relationship with the heating means 22 along the central
vertical axis of the apparatus, the semiconductor material held by
the selected crucible will be acted on by the heating means and
vaporized for restructuring on the target area by means of ion
implantation. To assure that vaporized source material of the
selected crucible does not reach the others, pivotal covers 33 and
34 are movably mounted on posts 35 and 36 respectively, which are
fixed to the opposite ends of the base 25. By means of pivot hinges
37 and 38, the covers 33 and 34 allow the desired crucible to slide
out from underneath with minimum interference. By properly moving
the crucibles on the base 25, any one of the three crucibles may be
exposed to the heating means while the other two crucibles are
protected from contamination. If it is desired to block one
outermost and inner crucible so that the other outer crucible is
exposed to the heating means, the crucibles are moved to the left
and cover 33 pivoted to cover the respective recesses and hence the
source material held in the covered crucibles. Cover 34 is raised
so that the crucible at the extreme right end of the plurality will
be solely exposed to the heating means. On the other hand, when it
is desired to expose the source material of the inner crucible to
the heating means, both covers 33 and 34 are lowered to block the
heating means from reaching the two outermost crucibles. The source
material in the crucible which is not being acted upon may be
covered with a lid composed of some high refractory material such
as molybdenum, tantalum, tungsten or the like, so that the lid will
not melt. Therefore, only one source material at a time may be
exposed for heating and vaporization by the electron source 22.
In order to move the plurality of the crucibles together as a unit,
a member 40 is attached to each side of the plurality of crucibles
by any suitable means so that the plurality of crucibles are joined
together in a unitary structure. Secured to member 40, is a block
41 through which a lead screw 42 is threadably connected. The
opposite ends of lead screw 42 are rotatably mounted on braces 43
and 44 which are fixed by any suitable means to the top surface of
pan 30. Lead screw 42 is actuated by means of an extension rod 45
coupled to the end of the lead screw by means of a universal joint
46.
The opposite end of the extension rod 45 from its end coupled to
lead screw 42 is connected to another universal joint (not shown)
which is operably connected to the hand wheel 28. Therefore, it can
be seen that rotation of the hand wheel 28 will effect rectilinear
movement of the crucible apparatus 23 so as to selectively position
a selected crucible from the plurality into operating position to
be heated by the heating means 22.
In view of the foregoing, it can be seen that the crucible
apparatus 23 is made up of three independent crucibles, wherein
each crucible can contain a different source material. In one case,
for example, one crucible can be employed to hold an N type silicon
and the other crucible can contain a P type silicon, while the
third crucible can contain still another source material having
different electrical conductivity characteristics. The crucibles
may be slid on base 25 by the reciprocating lead screw 42 so that
an operator may change the position of the individual crucible from
outside the vacuum chamber without the necessity of breaking
vacuum. Therefore, only one source material at a time may be
exposed for heating and vaporization by the electron source 22.
Referring now in detail to FIGS. 2, 3 and 4, it is noted that the
plurality of crucibles are mounted on the base 25 by means of a
ribbed groove arrangement comprising a plurality of ribs and
grooves arranged in parallel relationship on the corresponding
mating surfaces of the crucibles and the base 25. For example, it
is noted in FIG. 2, that the base is provided with grooves 50--52
inclusive which separate raised load bearing portions or ribs
53--56 inclusive. Mated with the respective ribs and grooves on the
base 25 are a plurality of ribs and grooves formed in the bottom
surface of the crucible and identified by ribs 57--59 and grooves
60 and 61. By the provision of such a grooved and ribbed
interconnection construction, the thermal expansion differential
between the hot crucible body and the water-cooled base create a
thermal compression interlock which physically connects the two
parts together and produces very low series thermal resistance to
the water coolant. Inasmuch as a greater surface area is provided
than with flat planar surfaces, minute surface irregularities which
normally cause hot spots and reduce thermal energy transfer are not
of critical concern.
To assure that the crucible apparatus and the base 25 effectively
functions as a heat sink, a liquid coolant is recirculated through
the base 25 through a plurality of passageways identified by
numeral 62. Each of the passageways are enclosed by the body of the
base 25 and are arranged in parallel spaced apart relationship with
respect to each other. However, a chamber 63 is provided in one end
of the base into which an inlet conduit 64 terminates so as to
supply a quantity of the cooling agent to the passageways. The
opposite end of the base is formed with an outlet chamber 65
communicating with an outlet conduit 66 for effecting the removal
of the conduit from the base. Conventional pumping apparatus is
included in the recirculating system so that a constant flow of the
agent is supplied to the passageways in the base. In the operation
of a crucible formed according to the present invention, water has
been employed as the cooling agent and is recirculated through the
base at approximately 50.degree.F.
Therefore, it can be seen that an improved control over the heat
gradient in the heat sink at the crucible interface with the base
is readily achieved by the incorporation of the plurality of
grooves and ribs disposed on the bottom of the crucible heat sink.
As the temperature of the crucible increases, expansion occurs and
in expanding, the copper edges of the ribs in corresponding grooves
form the thermal compression lock therebetween. To further increase
the heat gradient of the crucible in the base as a heat sink, it is
preferred that the crucibles and the base be formed from a high
thermal energy transferring material such as copper, for example. A
combined crucible and vaporizing means is provided which augment
each other during operation. The heater causes vaporization of the
source material and the heated source material conducts heat to the
crucible walls which is then transferred back to the melted source
material to effect vaporization thereof.
While particular embodiments of the present invention have been
shown and described, it will be obvious to those skilled in the art
that changes and modifications may be made without departing from
this invention in its broader aspects, and, therefore, the aim in
the appended claims is to cover all such changes and modifications
as fall within the true spirit and scope of this invention.
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