U.S. patent number 3,825,839 [Application Number 05/245,328] was granted by the patent office on 1974-07-23 for constant current field emission electron gun.
This patent grant is currently assigned to Nihon Denshi Kabushiki Kaisha. Invention is credited to Toshinori Goto, Nobuyuki Kobayshi, Teruo Someya.
United States Patent |
3,825,839 |
Someya , et al. |
July 23, 1974 |
CONSTANT CURRENT FIELD EMISSION ELECTRON GUN
Abstract
An improved field emission type electron gun is automatically
controlled so as to generate a stable emission current. The
preferred embodiment employs a detecting means for detecting the
emission current fluctuation and a control means for controlling
the electric field for field emission according to the output
signal of said detecting means.
Inventors: |
Someya; Teruo (Tokyo,
JA), Kobayshi; Nobuyuki (Tokyo, JA), Goto;
Toshinori (Tokyo, JA) |
Assignee: |
Nihon Denshi Kabushiki Kaisha
(Tokyo, JA)
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Family
ID: |
26366896 |
Appl.
No.: |
05/245,328 |
Filed: |
April 19, 1972 |
Foreign Application Priority Data
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Apr 30, 1971 [JA] |
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46-28753 |
Jul 12, 1971 [JA] |
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46-51610 |
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Current U.S.
Class: |
315/107; 315/106;
315/307; 315/311; 315/310 |
Current CPC
Class: |
H02H
7/20 (20130101); H01J 37/243 (20130101); F21V
17/06 (20130101); H01J 37/073 (20130101) |
Current International
Class: |
H01J
37/02 (20060101); H01J 37/073 (20060101); H01J
37/24 (20060101); H01J 37/06 (20060101); H02H
7/20 (20060101); F21V 17/00 (20060101); F21V
17/06 (20060101); H01j 029/46 (); H02h 007/00 ();
H02h 009/02 () |
Field of
Search: |
;315/106,107,175,176,307,310,311 ;328/8-10 ;313/357 |
References Cited
[Referenced By]
U.S. Patent Documents
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2384087 |
September 1945 |
Goodrich |
3377506 |
April 1968 |
Banas et al. |
3413517 |
November 1968 |
Barber et al,. |
3689798 |
September 1972 |
Brukovsley et al. |
|
Other References
Crewe, "High-Resolution S.E.M.," Scientific American, Apr. 1971,
pp. 26-35..
|
Primary Examiner: Rolinec; Rudolph V.
Assistant Examiner: Larkins; William D.
Attorney, Agent or Firm: Webb, Burden, Robinson &
Webb
Claims
We claim:
1. A field emission type electron gun comprising:
an emitter for emitting an electron beam,
a heating means for heating said emitter,
a first anode for generating a strong electric field at said
emitter,
a first voltage source for generating a potential difference
between said first anode and said emitter,
a second anode located behind the first anode maintained at ground
potential,
a second high voltage source for supplying negative high potential
to said emitter for accelerating said electron beam,
a first detecting means for detecting the electron beam emitted
from said emitter and providing a signal indicative of electron
beam fluctuation,
a comparing means for comparing the output signal of said first
detecting means with a reference signal and providing an output
signal indicative of the comparison,
a control means for controlling the output voltage of said first
voltage source in response to the output signal of said comparing
means, and
a second detecting means for detecting the change in output voltage
of said first voltage source providing an output signal indicative
of the progress of crystal buildup on the emitter surface.
2. A field emission type electron gun according to claim 1 in which
said second detecting means comprises a second comparison circuit
for comparing the output voltage of said first voltage source and a
reference signal voltage.
3. A field emission type electron gun comprising:
an emitter for emitting an electron beam,
a heating means for heating said emitter,
a first anode for generating a strong electric field at said
emitter,
a first voltage source for generating a potential difference
between said first anode and said emitter,
a second anode located behind the first anode maintained at ground
potential,
a second high voltage source for supplying negative high potential
to said emitter for accelerating said electron beam,
a first detecting means for detecting the electron beam emitted
from said emitter and providing a signal indicative of the electron
beam fluctuation,
a comparing means for comparing the output signal of said first
detecting means with a reference signal and providing an output
signal indicative of the comparison,
a control means for controlling the output voltage of said first
voltage source in response to the output signal of said comparing
means,
a second detecting means for detecting the change in output voltage
of said first voltage source, and
a warning means for indicating the state of crystal buildup on the
emitter surface, said warning means responsive to the output signal
of said second detecting means.
4. A field emission type electron gun comprising:
an emitter for emitting an electron beam,
a heating means for heating said emitter,
a first anode for generating a strong electric field at said
emitter,
a first voltage source for generating a potential difference
between said first anode and said emitter,
a second anode located behind the first anode and maintained at
ground potential,
a second high voltage source for supplying negative high potential
to said emitter for accelerating said electron beam,
a first detecting means for detecting the electron beam emitted
from said emitter and providing a signal indicative of the electron
beam fluctuation,
a first comparing means for comparing the output signal of said
first detecting means with a reference signal and providing a
signal indicative of the comparison,
a first control means for controlling the output voltage of said
first voltage source in response to the output signal of said first
comparing means,
a second detecting means for detecting the change in output voltage
of said first voltage source and providing an output signal
indicative thereof, and
a second control means for controlling said heating means in
response to the output signal of said second detecting means to
restore the emitter tip after deformation due to crystal
buildup.
5. A field emission type electron gun according to claim 4 in which
said second control means comprises a timing circuit for
controlling the time during which the emitter is heated so as to
restore the emitter tip after deformation due to crystal
buildup.
6. A field emission type electron gun comprising:
an emitter for emitting an electron beam,
a heating means for heating said emitter,
a first anode for generating a strong electric field at said
emitter,
a first voltage source for generating a potential difference
between said first anode and said emitter,
a second anode located behind the first anode and maintained at
ground potential,
a second high voltage source for supplying negative high potential
to said emitter for accelerating said electron beam,
a first detecting means for detecting the electron beam emitted
from said emitter and providing a signal indicative of electron
beam fluctuation,
a comparing means for comparing the output signal of said first
detecting means with a reference signal and providing an output
signal indicative of the comparison,
a first control means for controlling the output voltage of said
first voltage source in response to the output signal of said
comparing means,
a second detecting means for detecting the change in output voltage
of said first voltage source and providing an output signal
indicative thereof,
a second control means for controlling said heating means in
response to the output signal of said second detecting means,
and
a switching means arranged between said emitter and said first
anode, said switching means controlled in response to the output
signal of said second detecting means.
Description
This invention relates to a field emission type electron gun for
use in scanning and transmission type electron microscopes.
The advantage of the field emission type electron gun as compared
with the ordinary thermionic emission type electron gun, when used
in electron microscopes, lies in the fact that the current density
of the electron beam is very high and the electron source is very
small. Such being the case, the field emission type electron gun,
when used in a scanning type electron microscope, provides better
image resolution than would be possible with the thermionic
emission type electron gun. Also, when used in a transmission type
electron microscope, this type of gun ensures better image contrast
than in the case of the thermionic emission type electron gun, as a
result of improved coherency of electron beams.
However, in spite of the aforementioned advantages, the field
emission type electron gun possesses certain defects foremost of
which is the fact that the current density of the electron beam
gradually becomes unstable as a result of contamination on the
emitter surface and also deformation of the emitter tip. Various
ways have been devised to counteract this instability. A popular
method, although somewhat impractical due to high manufacturing
costs and maintenance, is to maintain the gun chamber at a
super-high vacuum, for example, on the order of 10.sup.-.sup.9 to
10.sup.-.sup.10 Torr. By so doing, the local work functions of the
emitter remains stable since the emitter surface contamination is
prevented.
Another method is to maintain the emitter at a high temperature
during field emission. By so doing, contamination is prevented and
the electron beam current remains stable in spite of the
comparatively low degree of vacuum. Heating the emitter, however,
as described above, causes the emitter tip to become soft which
results in a gradual buildup of crystal planes on the surface of
the emitter. This crystalline formation or buildup, if allowed to
progress, would cause the electric field intensity at the emitter
tip to increase locally and irregularly resulting in excess
emission and eventual damage to the emitter tip.
The field emission gun according to this invention is characterized
by the provision of a device or circuit for detecting the electron
beam current fluctuation and a device or circuit for controlling
the electric field in accordance with the output (feedback) signal
of the detecting circuit.
Accordingly, an advantage of this invention is to control this so
called buildup of crystals on the emitter surface. A second
advantage of this invention is to prevent the electron beam current
from becoming unstable and to reform the emitter tip after
deformation due to crystal buildup.
Further features and other objects and advantages will become clear
from a reading of the following detailed description made with
reference to the drawings in which:
FIGS. 1(a) and 1(b) are graphs showing the relationship between the
emission current and elapsed time in a field emission type electron
gun;
FIGS. 2 to 11 and 13 are block diagrams of the field emission type
electron guns according to this invention; and,
FIGS. 12(a), 12(b) and 12(c) are schematic views of the various
emitter tips.
FIGS. 1(a) and 1(b) are graphs showing the relationship between the
electron beam current and elapsed time in a conventional field
emission type gun. The graded increase of the electron beam current
shown in FIG. 1(a) is due to crystal buildup but by weakening the
electric field at the emitter tip at t.sub.1, the current intensity
may be reduced to its initial value. After remaining at this value
for some time, the current intensity gradually decreases as shown
in FIG. 1(b) and may be restored once more to its original value by
intensifying the electric field. Thus, by controlling the electric
field, the current intensity of the electron beam can be kept
stable.
FIG. 2 shows one embodiment of this invention. Emitter 1, made of
tungsten or the like, is heated to a suitable temperature, for
example 1,600.degree.C, by applying current from a heating current
source 2. The first anode 3 is maintained at a potential positive
to that of the emitter by means of a variable D.C. voltage source
4. A second anode 5 is connected to the positive output terminal of
a high voltage accelerating source 6, said terminal being
maintained at ground potential. The negative output terminal of the
source 6 is connected to the emitter 1 via an emission current
detector 7 which detects all the electrons emitted from said
emitter and converts them into an electrical signal. The output
signal from the emission current detector 7 is then applied to a
comparison circuit 8 where it is compared with a reference signal
from a standard signal generator 9. The compared signal is applied
to the variable D.C. voltage source 4, thereby controlling the
potential of the first electrode 3 so as to keep the electron
current constant.
By so doing, even if the emitter tip is slightly deformed by a
strong electric field, the emitter can be used over a long period
of time, because the potential of the first electrode 3 decreases
so as to prevent an increase of emission current. Again, since the
emitter tips do not necessarily have to be exactly identical, in
view of the fact that the constant electron beam current is
obtained at all times, emitter exchange presents no problems.
FIG. 3 shows another embodiment of this invention in which the
emission current detector 7 is arranged between the variable D.C.
voltage source 4 and the first electrode 3. In this arrangement,
the inflow of electrons to the first anode 3 is detected and since
this inflow is proportional to the outflow of electrons from the
emitter, the control function of this embodiment is exactly the
same as that in the embodiment shown in FIG. 2.
FIG. 4 shows a third embodiment of this invention in which an
electron beam detector 10 arranged behind the second anode 5 is
used instead of the emission current detector 7 described in the
previous embodiments. In this case, the detector 10 comprised of a
semi-conductor, for example, a simple electric conducting plate or
a converter for converting the electron beam into a light or X-ray,
said light or X-ray then being converted into an electrical
signal.
FIG. 5 shows a fourth embodiment of this invention in which a
resistor 11 is connected between the variable D.C. voltage source 4
and the first anode 3 so as to control the electric field
automatically. The resistor 11 has two functions, one being to
detect the electron beam fluctuation and the other to control the
electric field in accordance with said fluctuation. In this
embodiment, the potential difference between the emitter 1 and the
first anode 3 is equal to the sum of the output voltage V.sub.E of
source 4 and the voltage across the resistor 11, the polarity of
which is opposite to that of the output voltage V.sub.E (volt). The
reason for this is that the voltage across the resistor 11 (R ohm)
is determined by the electron current Ie (ampere) flowing into the
anode 3. Accordingly, voltage V.sub.EA = V.sub.E - Ie.sup.. R is
applied between the emitter 1 and the anode 3. In this case, if Ie
increases, V.sub.EA decreases so as to reduce the electron current
by weakening the electric field. Conversely, if Ie decreases,
V.sub.EA increases so as to increase the electron current by
strengthening the electric field. Thus, by utilizing this
embodiment, the stability of the electron beam current is improved.
As a result, electron beam fluctuation due to the elapse of time or
emitter exchange does not occur.
If a variable resistor is used instead of the fixed resistor 11, a
simple constant voltage source can be used instead of the variable
voltage source 4, because it would then be possible to vary voltage
V.sub.EA by varying the variable resistor instead of varying the
output of the voltage source 4.
FIG. 6 shows a fifth embodiment of this invention in which voltage
V.sub.EA is obtained by dividing resistors 12 and 13 instead of
voltage source 4. In this case, resistor 11 can be omitted without
affecting the circuit functionally.
FIG. 7 shows a sixth embodiment of this invention in which a
constant voltage element 14, for example, a Zener diode, and a
resistor 15 are used instead of resistors 12 and 13.
FIG. 8 shows a seventh embodiment of this invention in which the
voltage V.sub.EA is obtained by a fixed resistor 16 and a variable
resistor 17 through which the electron current flows from the first
anode 3 to second anode 7.
FIG. 9 shows an eighth embodiment of this invention in which the
intensity of the electric field between the emitter and the first
anode is controlled intermittently by means of an "on-off" switch
18 connected in parallel with the variable voltage source 4. In
this arrangement, if the electron beam current reaches a set value
determined by the standard signal generator 9, the resultant output
of the comparison circuit 8 causes the switch 18 to activate. In
other words, it is changed from "on" to "off" or vice versa. By so
doing, the electron beam current is kept to within the set value,
because crystal buildup on the emitter surface is prevented.
The embodiment shown in FIG. 10 is essentially the same as that
shown in FIG. 9 but includes a warning device 19 (e.g., a buzzer)
which is brought into operation when the output signal of the
comparison circuit 8 reaches a certain intensity. As soon as the
buzzer sounds, the switch is operated manually by the operator.
The various embodiments described thus far are all designed to
prevent crystal buildup on the emitter surface. The remaining
embodiments described below, on the other hand, are expressly
designed to reform or restore the emitter tip to the original shape
after deformation due to crystal buildup.
FIG. 11 shows one embodiment capable of achieving this restoration.
In the figure a comparison circuit 20 compares the output voltage
of the variable voltage source 4 and the output voltage of the
standard signal generator 21. The comparison circuit is applied to
the warning device 22. A switching means 23 controls the potential
of the first anode 3. In this embodiment the heating current source
2 is designed to produce an output current capable of heating the
emitter up to a sufficiently high temperature (for example about
2,000.degree.C).
Referring to FIG. 12, (a) shows the shape of an unused emitter tip
and (b) shows the change in the shape of the tip resulting from
crystal buildup. If under the condition shown in (b), the electric
field at the emitter is sufficiently weakened and the emitter is
heated to a sufficiently high temperature, the emitter can be
restored to its original shape as shown in (c) by thermal surface
tension.
The comparison circuit 20 in FIG. 11 is able to monitor the
progress of the crystal buildup because as the buildup progresses,
the electric field at the emitter tip becomes more intense which
causes the output voltage of source 4 to decrease more or less
proportionately in order to keep the electron beam current
constant. Thus, the decrease in the output voltage of source 4
results in a corresponding decrease in the output of the comparison
circuit 20, thereby monitoring the progress of crystal buildup
accurately. When the output voltage of source 4 becomes less than
that of the standard signal generator 21, the comparison circuit 20
activates the warning device 22 which tells the operator to
disengage switch 23. After which, the operator manually increases
to output current of the current source 2 so as to increase the
temperature of the emitter to a predetermined temperature thereby
restoring the emitter tip to its original shape.
FIG. 13 shows an embodiment capable of automatically restoring the
emitter tip to its original shape. This is made possible by the
provision of a timing circuit 24 which is activated by the output
signal of comparison circuit 20. In the activated state the timing
circuit 24 generates a signal, having a constant time interval,
which in turn activates a control means 25 for controlling the
switch 23 which remains disengaged during the time the signal is
being generated. Simultaneously, said time signal activates the
heating current source 2 so as to raise the temperature of the
emitter to a point where it is restored to its original shape.
Additionally, this invention is not limited to the above mentioned
embodiments. For example, this invention can be applied to the so
called "cold emission type field emission gun" which corresponds to
the embodiments where the heating means 2 is omitted in FIGS. 2 to
10, in order to prevent the emission current fluctuation due to the
contamination on the emitter surface.
Having thus described the invention with the detail and
particularity as required by the Patent Laws, what is desired
protected by Letters Patent is set forth in the following
claims.
* * * * *