U.S. patent number 11,355,719 [Application Number 14/411,983] was granted by the patent office on 2022-06-07 for transparent electrode for optoelectronic components.
This patent grant is currently assigned to HELIATEK GMBH. The grantee listed for this patent is HELIATEK GMBH. Invention is credited to Ulrike Bewersdorff-Sarlette, Karl Leo, Jan Meiss, Lars Mueller-Meskamp, Martin Pfeiffer, Moritz Riede, Sylvio Schubert, Christian Uhrich.
United States Patent |
11,355,719 |
Pfeiffer , et al. |
June 7, 2022 |
Transparent electrode for optoelectronic components
Abstract
An optoelectronic component on a substrate includes a first and
a second electrode. The first electrode is arranged on the
substrate and the second electrode forms a counter electrode. At
least one photoactive layer system is arranged between these
electrodes. The at least one photoactive layer system including at
least one donor-acceptor system having organic materials.
Inventors: |
Pfeiffer; Martin (Dresden,
DE), Uhrich; Christian (Dresden, DE),
Bewersdorff-Sarlette; Ulrike (Radebeul, DE), Meiss;
Jan (Munich, DE), Leo; Karl (Dresden,
DE), Riede; Moritz (Oxford, GB), Schubert;
Sylvio (Dresden, DE), Mueller-Meskamp; Lars
(Dresden, DE) |
Applicant: |
Name |
City |
State |
Country |
Type |
HELIATEK GMBH |
Dresden |
N/A |
DE |
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Assignee: |
HELIATEK GMBH (Dresden,
DE)
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Family
ID: |
1000006356741 |
Appl.
No.: |
14/411,983 |
Filed: |
July 2, 2013 |
PCT
Filed: |
July 02, 2013 |
PCT No.: |
PCT/IB2013/055425 |
371(c)(1),(2),(4) Date: |
December 30, 2014 |
PCT
Pub. No.: |
WO2014/006565 |
PCT
Pub. Date: |
January 09, 2014 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20150295195 A1 |
Oct 15, 2015 |
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Foreign Application Priority Data
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Jul 2, 2012 [DE] |
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10 2012 105 809 |
Jul 2, 2012 [DE] |
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10 2012 105 810 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L
51/442 (20130101); H01L 51/0021 (20130101); Y02E
10/549 (20130101); Y02B 10/10 (20130101); H01L
51/5231 (20130101); Y02P 70/50 (20151101); H01L
51/4293 (20130101) |
Current International
Class: |
H01L
51/44 (20060101); H01L 51/00 (20060101); H01L
51/42 (20060101); H01L 51/52 (20060101) |
Field of
Search: |
;136/255,256 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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WO |
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WO |
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WO |
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WO |
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WO |
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Dec 2011 |
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WO |
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2011161108 |
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Dec 2011 |
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WO |
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Other References
Man et al, Tailoring Mg:Ag functionalities for organic
light-emitting diodes, 2018, Organic Electronics, 63, 41-46. (Year:
2018). cited by examiner .
Stephens et al., Index of Refraction of Magnesium Oxide, Journal of
Research of the National Bureau of Standards, vol. 49, No. 4,
249-252. (Year: 1952). cited by examiner .
Bailey-Salzman, Rhonda F., et al., "Semtransparent organic
photovoltaic cells", Applied Physics Letters 88, 233502, 2006, pp.
233502-1-233502-3. cited by applicant .
Hiramoto, Masahiro, et al., "Effect of Thin Gold Interstitial-layer
on the Photovoltaic Properties of Tandem Organic Solar Cell",
Chemistry Letters, The Chemical Society of Japan, 1990, pp.
327-330. cited by applicant .
Hiramoto, Masahiro et al., "Three-layered organic solar cell with a
photovoltaic interlayer of codeposited pigments", Applied Physics
Letters 58(10), Mar. 11, 1991, pp. 1062-1064. cited by applicant
.
Hofmann, Simone et al., "Top-emitting organic light-emitting
diodes: Influence of cavity design", Applied Physics Letters 97,
2010, pp. 253308-253308-3. cited by applicant .
Konarka Power Plastic 20 Series, Product Specifications, 8 pages.
(2011). cited by applicant .
Hiramoto, Masahiro, et al., "Organic Solar Cells Incorporating a
p-i-n Junction", Mol. Cryst. Liq. Cryst., vol. 444, 2006, pp.
33-40. cited by applicant .
"Controlled Doping of Organic Vacuum Deposited Dye Layers: Basics
and Applications", pp. 1-155. (1999). cited by applicant .
Meiss, Jan, et al., "Efficient semitransparent small-molecule
organic solar cells", Applied Physics Letters 95, 2009, pp.
213306-1-213306-3. cited by applicant .
Meiss, Jan et al., "Near-infrared absorbing semitransparent organic
solar cells", Applied Physics Letters 99, 2011, pp.
193307-1-193307-3. cited by applicant .
International Search Report for PCT/IS2013/055425 dated Apr. 24,
2014. cited by applicant .
Filmetrics, Refractive Index of ITO, Indium Tin Oxide, InSnO, 2016,
1 page. cited by applicant.
|
Primary Examiner: Golden; Andrew J
Attorney, Agent or Firm: Heslin Rothenberg Farley and Mesiti
PC Mesiti; Nicholas
Claims
The invention claimed is:
1. An organic solar cell on a substrate comprising a first
electrode and a second electrode, wherein the first electrode is
arranged on the substrate and the second electrode forms a counter
electrode, wherein at least one photoactive layer system is
arranged between the first electrode and the second electrode, and
the at least one photoactive layer system comprises at least one
donor-acceptor system having organic materials, wherein the counter
electrode includes a first layer comprising Ag or a metal alloy
comprising Ag, a second layer being arranged on the first layer and
having a layer thickness between 10 and 100 nm and an index of
refraction of more than 2, wherein the second layer comprises an
alkali or alkaline earth metal or a nitride, selenide, sulfide,
oxide, or telluride, a first intermediate layer made of Ca, Mg, or
MoO.sub.x, wherein the first intermediate layer is arranged between
the first layer and the second layer, and a second intermediate
layer made of Nb.sub.2O.sub.5, wherein the second intermediate
layer has a layer thickness between 5 and 40 nm and is incorporated
between the first intermediate layer and the first layer.
2. The organic solar cell according to claim 1, wherein the metal
alloy comprises an alloy of Ag and Ca or an alloy of Ag and Mg.
3. The organic solar cell according to claim 2, wherein a
proportion of the Ag or Ca or Mg is at least 30%.
4. The organic solar cell according to claim 1, wherein the first
intermediate layer of the counter electrode has a layer thickness
between 0.1 and 100 nm and is deposited by thermal vapor
deposition.
5. The organic solar cell according to claim 1, wherein the first
layer of the counter electrode has a layer thickness between 3 and
20 nm.
6. The organic solar cell according to claim 1, wherein a
protective layer comprising a metal oxide and having a layer
thickness greater than 100 nm is arranged on the second layer.
7. The organic solar cell according to claim 1, wherein a further
intermediate layer made of a metal or metal oxide is incorporated
between the first layer and the second layer of the counter
electrode.
8. The organic solar cell according to claim 1, wherein the
substrate is opaque or transparent.
9. The organic solar cell according to claim 1, wherein the
substrate is flexible.
10. The organic solar cell according to claim 1, wherein the cell
comprises a pin single cell, pin tandem cell, pin multiple cell,
nip single cell, nip tandem cell, or nip multiple cell.
11. The organic solar cell according to claim 5, wherein the first
layer of the counter electrode has a layer thickness between 5 to
10 nm.
12. The organic solar cell according to claim 1, wherein the second
layer has an index of refraction of 2.2.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
This application is a national stage filing under section 371 of
International Application No. PCT/IB2013/055425, filed on Jul. 2,
2013, and published in German on Jan. 9, 2014 as WO 2014/006565 A2,
which claims priority to German Application No. 102012105809.1,
filed on Jul. 2, 2012, and German Application No. 102012105810.5,
filed on Jul. 2, 2012, the entire content of said applications
being hereby incorporated herein by reference.
BACKGROUND ART
The invention relates to a transparent electrode for optoelectronic
components.
Optoelectronic components, for example, solar cells or LEDs, TFTs,
etc., currently have broad applications in the everyday environment
and the industrial environment. In this case, those components
which enable an arrangement on curved or bulging surfaces because
of their embodiment are of particular interest.
Thus, for example, thin-film solar cells are known, which have a
flexible design and therefore enable an arrangement on curved
surfaces. Such solar cells preferably have in this case active
layers made of amorphous silicon (.alpha.-Si) or CIGS (Cu(In, Ga)
(S, Se).sub.2).
These thin-film solar cells have the disadvantage above all of the
high production costs due to the materials.
Organic light-emitting diodes (OLEDs) are also known, which can be
embodied as very thin and therefore also flexible because
backlighting is not required.
Furthermore, solar cells having organic active layers, which are
embodied as flexible (Konarka--Power Plastic Series) are also
known. The organic active layers can be constructed in this case
from polymers (for example, U.S. Pat. No. 7,825,326 B2) or small
molecules (for example, EP 2385556 A1). While polymers are
distinguished in that they cannot be vaporized and therefore only
can be applied from solutions, small molecules can be
vaporized.
The advantage of such components based on organic materials in
relation to the conventional components based on inorganic
materials (semiconductors such as silicon, gallium arsenide) are
the partially extremely high coefficients of optical absorption (up
to 2.times.10.sup.5 cm.sup.-1), so that the possibility suggests
itself of producing very thin solar cells with low material and
energy expenditure. Further technological aspects are the low
costs, the possibility of producing flexible large-area parts on
plastic films, and the nearly unlimited variation possibilities and
the unlimited availability of organic chemistry.
A solar cell converts light energy into electrical energy. The term
photoactive also refers in this case to the conversion of light
energy into electrical energy. In contrast to inorganic solar
cells, in the case of organic solar cells, free charge carriers are
not directly generated by the light, but rather firstly excitons
form, i.e., electrically neutral excitation states (bound
electron-hole pairs). These excitons are first separated in a
second step into free charge carriers, which then contribute to the
electrical current flow.
A possible implementation, which was already proposed in the
literature, of an organic solar cell consists of a pin diode
[Martin Pfeiffer, "Controlled doping of organic vacuum deposited
dye layers: basics and applications", PhD thesis TU Dresden, 1999],
having the following layer structure:
TABLE-US-00001 0 carrier, substrate, 1 base contact, usually
transparent, 2 p-layer(s), 3 i-layer(s), 4 n-layer(s), 5 cover
contact.
In this case, n or p means an n-doping or p-doping, which results
in an increase of the density of free electrons or holes in the
thermal equilibrium state. However, it is also possible that the
n-layer(s) or p-layer(s) are at least partially nominally undoped
and only have preferable n-conductive or preferable p-conductive
properties because of the material properties (for example,
different mobilities), because of unknown contaminants (for
example, remaining residues from synthesis, decomposition or
reaction products during the layer production), or because of
influences of the environment (for example, adjoining layers,
diffusion of metals or other organic materials, gas doping from the
surrounding atmosphere). In this meaning, such layers are primarily
to be understood as transport layers. The term i-layer refers in
contrast to a nominally undoped layer (intrinsic layer). One or
more i-layers can consist in this case of layers both made of one
material, and also a mixture of two materials (so-called
inter-penetrating networks or bulk heterojunction; M. Hiramoto et
al., Mol. Cryst. Liq. Cryst., 2006, 444, pp. 33-40). The light
incident through the transparent base contacts generates excitons
(bound electron-hole pairs) in the i-layer or in the nip-layer.
These excitons can only be separated by very high electric fields
or at suitable interfaces. Sufficiently high fields are not
available in organic solar cells, so that all promising concepts
for organic solar cells are based on the exciton separation at
photoactive interfaces. The excitons reach such an active interface
by diffusion, where electrons and holes are separated from one
another. The material which receives the electrons is referred to
in this case as the acceptor, and the material which receives the
hole is referred to as the donator (or donor). The separating
interface can lie between the p (n)-layer and the i-layer or
between two i-layers. The electrons are now transported away to the
n-region and the holes to the p-region in the installed electrical
field of the solar cell. The transport layers are preferably
transparent or substantially transparent materials having large
bandgap (wide gap), as are described, for example, in WO
2004083958. In this case, materials, the absorption maximum of
which is in the wavelength range<450 nm, preferably <400 nm,
are referred to as wide gap materials in this case.
Since excitons are always first generated by the light and free
charge carriers are not yet generated, the low-recombination
diffusion of excitons at the active interface plays a critical role
in organic solar cells. To provide a contribution to the
photocurrent, in a good organic solar cell, the exciton diffusion
length must therefore significantly exceed the typical penetration
depth of the light, so that the predominant part of the light can
be used. Organic crystals or thin films which are perfect
structurally and with regard to the chemical purity certainly
fulfill this criterion. However, for large-area applications, the
use of monocrystalline organic materials is not possible and the
production of multiple layers with sufficient structural perfection
is still very difficult up to this point. If the i-layer is a mixed
layer, only one of the components or also both components thus
assume the task of the light absorption. The advantage of mixed
layers is that the generated excitons must now only cover a very
short distance until they reach the domain boundary, where they are
separated. The electrons or holes are transported away separately
in the respective materials. Since the materials are in contact
with one another everywhere in the mixed layer, it is decisive in
the case of this concept that the separate charges have a long
lifetime on the respective material and closed percolation paths
for both charge carrier types toward the respective contact are
present from every location.
The doping of organic materials is known from U.S. Pat. No.
5,093,698. By admixing an acceptor-type or donator-type dopant
substance, the equilibrium charge carrier concentration in the
layer is elevated and the conductivity is increased. According to
U.S. Pat. No. 5,093,698, the dopant layers are used as injection
layers at the interface to the contact materials in
electroluminescent components. Similar doping approaches are also
analogously reasonable for solar cells.
Various possible implementations for the photoactive i-layer are
known from the literature. It can thus relate in this case to a
double layer (EP 0000829) or a mixed layer (Hiramoto, Appl. Phys.
Lett. 58, 1062 (1991)). A combination of double layers and mixed
layers is also known (Hiramoto, Appl. Phys. Lett. 58, 1062 (1991);
U.S. Pat. No. 6,559,375). It is also known that the mixture ratio
is different in various regions of the mixed layer (US 20050110005)
or the mixture ratio has a gradient.
Furthermore, tandem solar cells or multiple solar cells are known
from the literature (Hiramoto, Chem. Lett. 1990, 327 (1990); DE
102004014046).
Organic tandem solar cells have been known from the literature for
some time (Hiramoto, Chem. Lett., 1990, 327 (1990)). A 2 nm thick
gold layer is located between the two single cells in the tandem
cell of Hiramoto et al. The task of this gold layer is to ensure a
good electrical connection between the two single cells: the gold
layer causes an efficient recombination of the holes from one
partial cell with the electrons from the other partial cell and
therefore causes the two partial cells to be electrically connected
in series. Furthermore, the gold layer absorbs a part of the
incident light, like any thin metal layer (or metal cluster). This
absorption is a loss mechanism in the tandem cell of Hiramoto,
since thus less light is available to the photoactive layers (H2Pc
(metal-free phthalocyanine)/Me-PTC
(N,N''-dimethylperylene-3,4,9,10-bis(dicarboximide)) in the two
single cells of the tandem cell. The task of the gold layer is
therefore solely on the electrical side in this tandem structure.
Within this conception, the gold layer should be as thin as
possible or, in the best case, should be omitted completely.
Furthermore, organic pin tandem cells are known from the literature
(DE 102004014046): the structure of such a tandem cell consists of
two pin single cells, wherein the layer sequence "pin" describes
the sequence of a p-doped layer system, an undoped photoactive
layer system, and an n-doped layer system. The doped layer systems
preferably consist of transparent materials, so-called wide gap
materials/layers, and they can also be partially or entirely
undoped in this case or can also have different dopant
concentrations depending on the location or can have a continuous
gradient in the dopant concentration. Especially also very
low-doped or high-doped regions in the boundary region at the
electrodes, in the boundary region to another doped or undoped
transport layer, in the boundary region to the active layers, or in
the case of tandem or multiple cells, in the boundary region to the
adjoining pin or nip partial cell, i.e., in the region of the
recombination zone, are possible. An arbitrary combination of all
of these features is also possible. Of course, such a tandem cell
can also be a so-called inverted structure (for example, nip tandem
cell). All of these possible tandem cell implementation forms are
referred to hereafter with the term pin tandem cells. One advantage
of such a pin tandem cell is that due to the use of doped transport
layers, a very simple and simultaneously very efficient possible
implementation for the recombination zone between the two partial
cells is possible. The tandem cell has, for example, a pinpin
structure (or nipnip is also possible, for example). An n-doped
layer and a p-doped layer, which form a pn-system (or np-system),
are located in each case at the interface between the two pin
partial cells. Very efficient recombination of the electrons and
holes takes place in such a doped pn-system. The stacking of two
pin single cells therefore directly results in a complete pin
tandem cell, without still further layers being required. It is
especially advantageous here that thin metal layers are no longer
necessary, as in Hiramoto, in order to ensure the efficient
recombination. The loss absorption of such thin metal layers can
thus be completely avoided.
The top contacts previously described in the literature are not
adequate for implementing optoelectronic components having high
transparency and have excessively high reflections. Furthermore,
there is a high level of interest in the implementation of
transparent top contacts on opaque substrates.
Thin thermally vapor deposited metal layers having intermediate
layers and sputtered ITO layers are known from the literature for
implementing transparent top contacts on organic components.
Bailey-Salzmann et al. disclose in their publication of 2006
(APPLIED PHYSICS LETTERS 88, 233502 _2006) the use of thin Ag
layers (25 nm) for implementing semitransparent organic solar
cells.
Meiss et al. disclose in 2009 in their publication (APPLIED PHYSICS
LETTERS 95, 213306 _2009) the use of a doped transport layers and
thin Ag layers (14 nm) for implementing transparent organic solar
cells. In addition, a thin Al intermediate layer is used under the
Ag layer for smoothing thereof in this publication. The use of
organic layers on the thin Ag layer to elevate the transparency of
the top contact is also disclosed here.
In their publication of 2011, Meiss et al. disclose (APPLIED
PHYSICS LETTERS 99, 193307, 2011) the use of a thin Ca layer as an
alternative to the above-described thin Al intermediate layer.
The implementation of organic components having transparent top
contact on opaque base contact is also known from the literature.
Hoffmann et al. disclose, for example, in their publication of 2012
(APPLIED PHYSICS LETTERS 97, 253308, 2010) an organic
light-emitting diode (OLED) using doped transport layers, a thin Ag
metal layer (13 nm), and an organic layer on the Ag layer to
elevate the transparency of the top contact.
In the case of opaque substrates, the known solutions result in
increased parasitic absorption and reflection losses and therefore
a reduction of the efficiency in relation to transparent
substrates, for example, using ITO base contacts.
The object of the present invention is therefore to overcome the
above-mentioned disadvantages of the prior art and to specify a
transparent top contact for optoelectronic components.
BRIEF SUMMARY OF THE INVENTION
According to the invention, an optoelectronic component on a
substrate comprises a first and a second electrode, wherein the
first electrode is arranged on the substrate and the second
electrode forms a counter electrode, wherein at least one
photoactive layer system is arranged between these electrodes,
which comprises at least one donor-acceptor system having organic
materials, wherein the counter electrode has at least one first
layer comprising metal or a metal alloy. Furthermore, the counter
electrode comprises a first intermediate layer made of an alkali or
alkaline earth metal, or a metal oxide, wherein the first
intermediate layer is arranged between the first layer and the
photoactive layer system of the component. In addition, the counter
electrode comprises a second layer, which is arranged on the first
layer and has a layer thickness between 10 and 100 nm.
In one embodiment, the metal of the first layer is selected from a
group consisting of Ag, Au, Pt, Cr, Ti, Al, Zr, Cu, Zn, Sn, Sr, La,
In, Sc, Hf.
In a further embodiment of the invention, the first layer comprises
an alkali or alkaline earth metal, or a metal oxide.
In one embodiment of the invention, the first layer contains
Ag.
In one embodiment of the invention, the first layer contains an
alloy made of Ag and Ca or Ag and Mg.
In one embodiment of the invention, the layer contains an alloy
made of Ag and Ca or Ag and Mg, wherein the proportion of the Ag or
Ca or Mg is at least 30%.
In a further embodiment, the first intermediate layer has a layer
thickness of 0.05 to 30 nm.
In a further embodiment, the first intermediate layer contains Ca
or MoO.sub.x.
In a further embodiment, the first intermediate layer contains an
alkali or alkaline earth metal halogenide.
In a further embodiment of the invention, the second layer contains
an alkali or alkaline earth metal, a metal oxide, or an organic
material.
In a further embodiment of the invention, a protective layer is
arranged on the second layer, which comprises a metal oxide and has
a layer thickness>100 nm. The protective layer is used in this
case as a scratch protection, for example.
In a further embodiment of the invention, the substrate is embodied
as opaque or transparent.
Opaque is understood in the meaning of the invention as
nontransparent.
In a further embodiment of the invention, the substrate is embodied
as flexible.
A flexible substrate is understood in the meaning of the present
invention as a substrate which ensures deformability as a result of
external force action. Such flexible substrates are thus suitable
for arrangement on curved surfaces. Flexible substrates are foils
or metal strips, for example.
In a further embodiment of the invention, the substrate is embodied
as flexible.
In a further embodiment of the invention, the electrode which is
arranged on the substrate is embodied as opaque or transparent.
In a further embodiment of the invention, the electrode which is
arranged on the substrate comprises a metal, metal oxide, metal
grid, metal-metal oxide layer system, metal particles, metal
nanowire, graphene, or organic semiconductors.
In a first embodiment of the invention, the first intermediate
layer of the counter electrode has a layer thickness between 0.1
and 100 nm and is deposited by thermal vapor deposition. This is
advantageous in particular if metallic layers or metal oxide layers
are to be deposited on organic layers or layers containing organic
materials.
Thermal vapor deposition is understood in the meaning of the
present invention as the heating of the material to be vaporized in
a vapor deposition unit, wherein the material is heated and
vaporized as a result thereof, so that a material vapor arises,
wherein this material vapor is deposited as a layer on a substrate,
which is arranged in spatial proximity to the vapor deposition
unit.
In one embodiment of the invention, the first layer has a layer
thickness between 0.5 and 30 nm.
In one embodiment of the invention, the first layer is deposited by
thermal vapor deposition and has a layer thickness between 0.5 and
20 nm.
In a further embodiment, the first intermediate layer contains a
molybdenum oxide selected from the group MoO, MoO.sub.2, and
MoO.sub.3.
In a further embodiment of the invention, the first layer of the
counter electrode has a layer thickness between 3 and 20 nm,
preferably 5 to 10 nm, and is not deposited by thermal vapor
deposition. Alternative deposition methods in comparison to thermal
vapor deposition, which are referred to hereafter as deposition
technologies, can be, for example, electron beam evaporation,
pulsed laser deposition or pulsed laser ablation, arc evaporation
or arc PVD, molecular beam epitaxy, sputter deposition or cathode
sputtering, ion beam assisted deposition (IBAD), ion plating, or
ionized cluster beam deposition (ICBD).
The deposition of the first layer by alternative deposition methods
unifies multiple advantages in comparison to thermal vapor
deposition: 1) In relation to thermal vapor deposition, smoother
layers can be created with the aid of alternative deposition
methods, so that with very thin layers, a closed layer having high
conductivity in the plane of the substrate can already be achieved.
Because of the low layer thickness, high levels of transmission of
the layer can be achieved, with sufficient conductivity (in the
plane) at the same time. 2) In relation to thermal vapor
deposition, a high degree of homogeneity of the layer thickness on
the substrate can be created with the aid of the above-mentioned
deposition technologies. This is particularly important in the case
of thin top contact layers, since variations in the layer thickness
of the second layer directly affect the performance of the
component and result in a visible change of the visual impression
of the component, which is generally undesirable. 3) Due to the use
of alternative deposition methods in relation to thermal vapor
deposition, it is possible to use a greater number of different
materials with greater variation of the process parameters (for
example, reactive sputtering).
In a further embodiment of the invention, the second layer has a
layer thickness between 10 and 100 nm and is deposited by thermal
vapor deposition or alternative deposition methods. The second
layer is primarily used for the thin-film antireflection coating of
the top contact and should have a higher index of refraction than
the adjoining medium, which follows the second layer, in the
wavelength range usable for the solar cell.
In a further embodiment of the invention, the second layer has an
index of refraction>2, preferably 2.2. This is advantageous in
particular to ensure a higher index of refraction in the following
adhesive layers in relation to the wavelength range usable for the
solar cell. Exemplary compounds having an index of refraction>2
are, for example, selenides, sulfides, tellurides, nitrides, and
polymers, for example, ZnS, ZnSe, or ZnTe.
In a further embodiment of the invention, a protective layer which
contains a metal oxide, and which has a layer thickness>100 nm,
is arranged on the second layer. This protective layer offers a
mechanical protection to the component, so that touching the active
side is enabled, and/or implements a reinforced protection of the
organic component from water and oxygen in particular.
In a further embodiment of the invention, at least one second
intermediate layer made of a metal or metal oxide, which has a
layer thickness between 0.02 and 40 nm, is incorporated between the
first intermediate layer and the first layer of the counter
electrode
This second intermediate layer can function as a smoothing layer or
as a wetting layer or seed layer.
In one embodiment of the second intermediate layer as a smoothing
layer, the roughness of underlying layers is balanced out, so that
the conductive first layer grows on the first intermediate layer,
which is smoothed by the second intermediate layer, wherein a
sufficient conductivity is already achieved at low layer
thicknesses of the first layer.
In one design of the second intermediate layer as a wetting layer,
it prevents or reduces the island growth of the first layer, so
that sufficient conductivity in the plane of the substrate is
already created at low layer thicknesses of the first layer. In one
design of the second intermediate layer as a seed layer, the island
growth cannot be suppressed, but islands, which lie very close to
one another, form on the seeds of the seed layer during the
deposition of the first layer, so that sufficient conductivity in
the plane of the substrate is already created at low layer
thicknesses of the first layer.
The second intermediate layer can be deposited by means of the
above-mentioned deposition technologies, for example.
In one design of the embodiment, the second intermediate layer is
embodied from multiple layers having differing material
composition. The second intermediate layer can additionally be
embodied from a conductive material or a mixture of materials. It
is additionally conceivable that this layer contributes to the
stress reduction between the layers of the component. Such stress
between the layers can occur, for example, because of different
coefficients of thermal expansion (coefficients of strain, inter
alia), which can result in partial or complete detachment of the
layers in the worst case.
In a further embodiment of the invention, a third intermediate
layer having a layer thickness between 0.02 nm and 40 nm, made of a
metal or metal oxide, is incorporated between the first and the
second layers of the counter electrode. This third intermediate
layer can function as a smoothing layer, wetting layer, or seed
layer. The third intermediate layer can be deposited by means of
one of the above-mentioned deposition technologies or can be
thermally deposited. In one design of the embodiment, the third
intermediate layer is embodied from multiple layers having
differing material composition. The third intermediate layer can
additionally be embodied from a conductive material or a mixture of
materials. It is additionally conceivable that this third
intermediate layer contributes to the stress reduction.
In a further embodiment of the invention, the second layer
comprises an alkali or alkaline earth metal, a metal oxide, or an
organic material.
In a further embodiment of the invention, the second layer
comprises a nitride, selenide, sulfide, oxide, telluride, or
polymer.
In a further embodiment of the invention, the second layer
comprises Ag, Au, Pt, Cr, Ti, Al, Zr, Cu, Zn, Sn, Sr, La, In, Sc,
Hf or an alloy comprising at least one of the above-mentioned
elements.
In a further embodiment of the invention, the component is a pin
single cell, pin tandem cell, pin multiple cell, nip single cell,
nip tandem cell, or nip multiple cell.
In a further embodiment of the invention, the component is embodied
from a combination of nip, ni, ip, pnip, pni, pip, nipn, nin, ipn,
pnipn, pnin, or pipn structures, in which multiple independent
combinations, which contain at least one i-layer, are stacked one
on top of another.
In a further embodiment of the invention, the active layer
comprises at least one mixed layer having at least two main
materials, wherein these form a photoactive donor-acceptor
system.
In a further embodiment of the invention, at least one main
material is an organic material.
In a further embodiment of the invention, the organic material
relates to small molecules. The term small molecules are understood
in the meaning of the invention as monomers which can be vaporized
and therefore deposited on the substrate.
In a further embodiment of the invention, the organic material at
least partially relates to polymers.
In a further embodiment of the invention, at least one of the
active mixed layers comprises a material from the group of
fullerenes or fullerene derivatives as an acceptor.
In a further embodiment of the invention, at least one doped,
partially doped, or undoped transport layer is arranged between the
electrode and the counter electrode.
In a further embodiment of the invention, a doped, partially doped,
or undoped transport layer is arranged between the counter
electrode and the photoactive layer system.
In a further embodiment of the invention, the optoelectronic
component is an organic solar cell.
In a further embodiment of the invention, the optoelectronic
component is an organic light-emitting diode.
The subject matter of the invention is also an electrode device
made of a layer system comprising at least one first layer made of
a metal or metal alloy and a first intermediate layer, which is
arranged between a photoactive layer and the first layer, wherein
the layer system has a transparency of 40 to 95%.
Furthermore, the use of an electrode device in an optoelectronic
component is also the subject matter of the invention.
Furthermore, a method for producing an electrode device for an
optoelectronic component comprising the following steps is also the
subject matter of the invention: depositing a first intermediate
layer made of an alkali or alkaline earth metal or metal oxide on a
photoactive layer system of the component, wherein the deposition
is performed by thermal vapor deposition, depositing a first layer
on the first intermediate layer, wherein the deposition of the
first layer is performed by a deposition technology selected from
the group consisting of electron beam evaporation, pulsed laser
deposition, arc PVD, molecular beam epitaxy, cathode sputtering,
ion beam assisted deposition, ion plating, or ionized cluster beam
deposition, and depositing a second layer on the first layer.
In a further embodiment of the invention, the optoelectronic
component has more than one photoactive layer between the electrode
and the counter electrode.
In a further embodiment of the invention, the mixed layers
preferably each consist of two main materials.
In a further embodiment of the invention, a gradient of the mixture
ratio can be provided in the individual mixed layers.
In a further embodiment of the invention, one or more of the
further organic layers are doped wide gap layers, wherein the
maximum of the absorption is at <450 nm.
In a further embodiment of the invention, at least two main
materials of the mixed layers have different optical absorption
spectra.
In a further embodiment of the invention, the main materials of the
mixed layers have different optical absorption spectra, which
mutually supplement one another, to cover the broadest possible
spectral range.
In a further embodiment of the invention, the absorption range of
at least one of the main materials of the mixed layers extends into
the infrared range.
In a further embodiment of the invention, the absorption range of
at least one of the main materials of the mixed layers extends into
the infrared range in the wavelength range from >700 nm to 1500
nm.
In a further embodiment of the invention, the HOMO and LOMO levels
of the main materials are adapted so that the system enables a
maximum open circuit voltage, a maximum short-circuit current, and
a maximum filling factor.
In a further embodiment of the invention, at least one of the
photoactive mixed layers contains, as an acceptor, a material from
the group of the fullerenes or fullerene derivatives (C.sub.60,
C.sub.70, etc.).
In a further embodiment of the invention, all photoactive mixed
layers contain, as an acceptor, a material from the group of the
fullerenes or fullerene derivatives (C.sub.60, C.sub.70, etc.).
In a further embodiment of the invention, at least one of the
photoactive mixed layers contains, as a donor, a material from the
class of phthalocyanines, perylene derivatives, oligothiophenes, or
a material as described in WO 2006092134.
In a further embodiment of the invention, at least one of the
photoactive mixed layers contains, as an acceptor, the material
fullerene C.sub.60 and, as a donor, the material 4P-TPD.
Polymer solar cells, which contain two or more photoactive mixed
layers, are also comprised in the meaning of the invention, wherein
the mixed layers directly adjoin one another. However, the problem
exists in polymer solar cells that the materials are applied from
solution and therefore a further applied layer very easily has the
result that the layers lying underneath will be detached,
dissolved, or changed in their morphology. In polymer solar cells,
only very restricted multiple mixed layers can therefore be
produced, and also only in that various material and solvent
systems are used, which mutually influence one another hardly or
not at all during the production. Solar cells made of small
molecules have a very clear advantage here, since by way of the
vapor deposition process in vacuum, arbitrary systems and layers
can be applied to one another and therefore the advantage of the
multiple mixed layer structure can be used very broadly and can be
implemented using arbitrary material combinations.
In a further embodiment of the invention, a p-doped layer is also
provided between the first electron-conducting layer (n-layer) and
the electrode located on the substrate, so that it is a pnip or pni
structure, wherein preferably the doping is selected to be
sufficiently high that the direct pn contact does not have a
blocking effect, but rather low-loss recombination occurs,
preferably by way of a tunneling process.
In a further embodiment of the invention, a p-doped layer is also
provided in the component between the active layer and the
electrode located on the substrate, so that it is a pip or pi
structure, wherein the additional p-doped layer has a Fermi level
which is at most 0.4 eV, but preferably less than 0.3 eV below the
electron transport level of the i-layer, so that lower-loss
electron extraction from the i-layer into this p-layer can
occur.
In a further embodiment of the invention, an n-layer system is also
provided between the p-doped layer and the counter electrode, so
that it is an nipn or ipn structure, wherein preferably the doping
is selected to be sufficiently high that the direct pn contact does
not have a blocking effect, but rather low-loss recombination
occurs, preferably by way of a tunneling process.
In a further embodiment, an n-layer system can also be provided in
the component between the intrinsic, photoactive layer and the
counter electrode, so that it is an nin or in structure, wherein
the additional n-doped layer has a Fermi level which is at most 0.4
eV, but preferably less than 0.3 eV above the hole transport level
of the i-layer, so that lower-loss hole extraction from the i-layer
into this n-layer can occur.
In a further embodiment, the acceptor material has an absorption
maximum in the wavelength range>450 nm.
In a further embodiment, the donor material has an absorption
maximum in the wavelength range>450 nm.
In a further embodiment, the active layer system also contains, in
addition to the mentioned mixed layer, further photoactive single
layers or mixed layers.
In a further embodiment, the n-material system contains one or more
doped wide gap layers. The term wide gap layers defines in this
case layers having an absorption maximum in the wavelength
range<450 nm.
In a further embodiment, the p-material system contains one or more
doped wide gap layers.
In a further embodiment, the acceptor material is a material from
the group of the fullerenes or fullerene derivatives (preferably
C.sub.60 or C.sub.70) or a PTCDI derivative
(perylene-3,4,9,10-bis(dicarboximide) derivative).
In a further embodiment, the donor material is an oligomer, in
particular an oligomer according to WO 2006092134, a porphyrine
derivative, a pentacene derivative, or a perylene derivative, such
as DIP (di-indeno-perylene) or DBP (di-benzo-perylene).
In a further embodiment, the p-material system contains a TPD
derivative (triphenylamine dimer), a spiro compound, such as
spiropyrane, spiroxazine, MeO-TPD (N,
N,N',N'-tetrakis(4-methoxyphenyl)-benzidine),
di-NPB(N,N'-diphenyl-N,N'-bis(N,N'-di(1-naphthyl)-N,N'-diphenyl-(1,1'-bip-
henyl) 4,4'-diamine), MTDATA
(4,4',4''-tris-(N-3-methylphenyl-N-phenyl-amino)-triphenylamine),
TNATA
(4,4',4''-tris[N-(1-naphthyl)-N-phenyl-amino]-triphenylamine),
BPAPF (9,9-bis{4-[di-(p-biphenyl)aminophenyl]}fluorene), NPAPF
(9,9-bis[4-(N,N'-bis-naphthalene-2-yl-amino)phenyl]-9H-fluorene),
spiro-TAD
(2,2',7,7'-tetrakis-(diphenylamino)-9,9'-spirobifluorene), PV-TPD
(N,N-di 4-2,2-diphenyl-ethene-1-yl-phenyl-N,N-di
4-methylphenylphenylbenzidine), 4P-TPD
(4,4'-bis-(N,N-diphenylamino)-tetraphenyl), or a p-material
described in DE102004014046.
In a further embodiment, the n-material system contains fullerenes,
for example, C.sub.60, C.sub.70; NTCDA
(1,4,5,8-naphthalene-tetracarboxylic-dianhydride), NTCDI
(naphthalene tetracarboxylic diimide), or PTCDI
(perylene-3,4,9,10-bis(dicarboximide).
In a further embodiment, the p-material system contains a p-dopant,
wherein this p-dopant is F4-TCNQ, a p-dopant as described in
DE10338406, DE10347856, DE10357044, DE102004010954, DE102006053320,
DE102006054524, and DE102008051737, or a transition metal oxide
(VO, WO, MoO, etc.).
In a further embodiment, the n-material system contains an
n-dopant, wherein this n-dopant is a TTF derivative
(tetrathiafulvalene derivative) or DTT derivative
(dithienothiophene), an n-dopant as described in DE10338406,
DE10347856, DE10357044, DE102004010954, DE102006053320,
DE102006054524, and DE102008051737, or Cs, Li, or Mg.
In a further embodiment, one electrode is embodied as transparent
having a transmission>80% and the other electrode is embodied as
reflective having a reflection>50%.
In a further embodiment, the component is embodied as
semitransparent having a transmission of 10-80%.
In a further embodiment, the organic materials used have a low
melting point, preferably <100.degree. C.
In a further embodiment, the organic materials used have a low
glass transition temperature, preferably <150.degree. C.
In a further embodiment, the optoelectronic components according to
the invention are used in conjunction with energy buffers or energy
storage media, for example, batteries, capacitors, etc. for
connection to consumers or devices.
In a further embodiment, the optoelectronic components according to
the invention are used in combination with thin-film batteries.
In a further embodiment, the optoelectronic components according to
the invention are used on curved surfaces, for example, glass,
concrete, roof tiles, clay, automobile glass, etc. It is
advantageous in this case that the organic solar cells according to
the invention, in relation to conventional inorganic solar cells,
can be applied to flexible carriers such as foils, textiles,
etc.
The above-described embodiments can also be combined with one
another to implement the invention.
BRIEF DESCRIPTION OF THE DRAWING FIGURES
The invention is to be described in greater detail hereafter on the
basis of several exemplary embodiments and figures. The exemplary
embodiments are to describe the invention in this case without
restricting it. In the figures:
FIG. 1 shows a schematic illustration of a first embodiment
according to the invention of an electrode arrangement,
FIG. 2 shows a schematic illustration of a second embodiment
according to the invention of an electrode arrangement,
FIG. 3 shows a schematic illustration of a third embodiment
according to the invention of an electrode arrangement, and
FIG. 4 shows a schematic illustration of a fourth embodiment
according to the invention of an electrode arrangement.
DETAILED DESCRIPTION
In one exemplary embodiment of the invention, an electrode
arrangement 1 according to the invention is shown in FIG. 1, which
comprises a first intermediate layer 3 made of a metal or metal
oxide, for example, made of MoO.sub.3. The first intermediate layer
3 is deposited in this case by thermal vapor deposition on an
organic layer of the component. A first layer 2 comprising a metal,
for example, Ag, is deposited thereon. The deposition is performed
in this case by means of sputtering. A second layer 4 is arranged
as an antireflection layer, which comprises, for example,
N,N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-benzidine, on this
first layer 2.
In a further exemplary embodiment of the invention (not shown in
greater detail), the electrode arrangement 1 according to the
invention comprises a first intermediate layer 3 made of a metal or
metal oxide, for example, made of MoO.sub.3. The first intermediate
layer 3 is deposited in this case by thermal vapor deposition on an
organic layer of the component. A first layer 2 comprising a metal
alloy, for example, Ag:Ca, is deposited thereon. The deposition is
performed in this case by means of sputtering. A second layer 4 is
arranged as an antireflection layer, which comprises, for example,
N,N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-benzidine, on this
first layer 2.
In a further exemplary embodiment of the invention (not shown in
greater detail), the electrode arrangement 1 according to the
invention comprises a first intermediate layer 3 made of an alkali
or alkaline earth metal, for example, made of Ca. The first
intermediate layer 3 is deposited in this case by thermal vapor
deposition on an organic layer of the component. A first layer 2
comprising a metal alloy, for example, Ag:Ca, is deposited thereon.
The deposition is performed in this case by means of sputtering. A
second layer 4 is arranged as an antireflection layer, which
comprises, for example, ZnS, ZnSe, or ZnTe, on this first layer
2.
In a further exemplary embodiment of the invention (not shown in
greater detail), the electrode arrangement 1 according to the
invention comprises a first intermediate layer 3 made of an alkali
or alkaline earth metal, for example, made of Mg. The first
intermediate layer 3 is deposited in this case by thermal vapor
deposition on an organic layer of the component. A first layer 2
comprising a metal alloy, for example, Ag:Mg, is deposited thereon.
The deposition is performed in this case by means of sputtering. A
second layer 4 is arranged as an antireflection layer, which
comprises, for example, ZnS, ZnSe, or ZnTe, on this first layer
2.
In a further exemplary embodiment, a further design of an electrode
arrangement 1 is shown in FIG. 2, which comprises the same
structure as the preceding exemplary embodiment, wherein a scratch
protection layer 5 is arranged on the second layer 4. This scratch
protection layer 5 can be embodied from TiO.sub.2, for example, and
can have a layer thickness of 150 nm.
In a further exemplary embodiment, a schematic illustration of an
electrode arrangement 1 is shown in FIG. 3, which comprises a first
intermediate layer 3 made of a metal or metal oxide, for example,
made of MoO.sub.3. A second intermediate layer 6 made of
Nb.sub.2O.sub.5 is arranged thereon, which has a layer thickness
between 5 and 40 nm. The first layer 2 made of metal, for example,
Ag, is deposited on this second intermediate layer 6, wherein the
deposition is performed by sputtering. A second layer 4 is arranged
as an antireflection layer, which comprises, for example, N,
N'-bis(naphthalene-1-yl)-N, N'-bis(phenyl)-benzidine on this first
layer 3. A scratch protection layer 5 is arranged on this second
layer 4. This scratch protection layer 5 can be embodied from
TiO.sub.2, for example, and can have a layer thickness of 150
nm.
In a further exemplary embodiment (not shown in greater detail), an
electrode arrangement 1 comprises a first intermediate layer 3 made
of a metal or metal oxide, for example, made of MoO.sub.3. A second
intermediate layer 6 made of Mg is arranged thereon, which has a
layer thickness between 5 and 40 nm. The first layer 3 made of a
metal alloy, for example, Ag:Mg, is deposited on this second
intermediate layer 6, wherein the deposition is performed by
sputtering. A second layer 4 is arranged as an antireflection
layer, which comprises, for example, ZnS, on this first layer 3. A
scratch protection layer 5 is arranged on this second layer 4. This
scratch protection layer 5 can be embodied from TiO.sub.2, for
example, and can have a layer thickness of 150 nm.
In a further exemplary embodiment (not shown in greater detail), an
electrode arrangement 1 comprises a first intermediate layer 3 made
of a metal or metal oxide, for example, made of MoO.sub.3. A second
intermediate layer 6 made of Ca is arranged thereon, which has a
layer thickness between 5 and 40 nm. The first layer 3 made of a
metal alloy, for example, Ag:Ca, is deposited on this second
intermediate layer 6, wherein the deposition is performed by
sputtering. A second layer 4 is arranged as an antireflection
layer, which comprises, for example, ZnSe, on this first layer 3. A
scratch protection layer 5 is arranged on this second layer 4. This
scratch protection layer 5 can be embodied from TiO.sub.2, for
example, and can have a layer thickness of 150 nm.
In one design of the above-described exemplary embodiment (not
shown in greater detail), the second intermediate layer 6 is
embodied from aluminum-doped zinc oxide (AZO). The layer thickness
can be between 5 and 40 nm in this case.
In one design of the above-described exemplary embodiment (not
shown in greater detail), the second intermediate layer 6 is
embodied from Al. The layer thickness can be between 0.2 and 3 nm
in this case.
In one design of the above-described exemplary embodiment (not
shown in greater detail), the electrode arrangement 1 has a first
intermediate layer 3, which comprises a metal or metal oxide, for
example, made of MoO.sub.3. A second intermediate layer 6 made of
Nb.sub.2O.sub.5 is arranged thereon, which has a layer thickness
between 5 and 40 nm. The first layer 3 made of a metal, for
example, Ag, is deposited on this second intermediate layer 6,
wherein the deposition is performed by sputtering. A scratch
protection layer 5 is arranged on this first layer 3. This scratch
protection layer 5 can be embodied from TiO.sub.2, for example, and
can have a layer thickness of 150 nm.
In a further exemplary embodiment, a schematic illustration of an
electrode arrangement 1 is shown in FIG. 4, which comprises a first
intermediate layer 3 made of a metal or metal oxide, for example,
made of MoO.sub.3. A second intermediate layer 6 made of
Nb.sub.2O.sub.5 is arranged on this first intermediate layer 3,
which has a layer thickness between 5 and 40 nm. A first layer 2
made of a metal, for example, Ag, is arranged thereon, wherein the
deposition of the first layer 2 is performed by means of
sputtering. A third intermediate layer 7, for example, made of ITO,
is arranged on this first layer 2. The layer thickness of this
third intermediate layer 7 made of ITO is between 5 and 40 nm. A
second layer 4 is arranged as an antireflection layer, which
comprises, for example,
N,N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-benzidine, on this
third intermediate layer 7. A scratch protection layer 5 is
arranged on this second layer 4. This scratch protection layer 5
can be embodied from TiO.sub.2, for example, and can have a layer
thickness of 150 nm.
In one design of the above-described exemplary embodiment, the
third intermediate layer 7 is embodied from aluminum-doped zinc
oxide AZO, wherein this intermediate layer has a layer thickness
between 5 and 40 nm.
In a further design of the above-described exemplary embodiment
(not shown in greater detail), the electrode arrangement 1 has a
first intermediate layer 3, which comprises a metal or metal oxide,
for example, made of MoO.sub.3. A second intermediate layer 6 made
of Nb.sub.2O.sub.5 is arranged on this first intermediate layer 3,
which has a layer thickness between 5 and 40 nm. A first layer 3
made of a metal, for example, Ag, is arranged thereon, wherein the
deposition of the first layer 2 is performed by means of
sputtering. A third intermediate layer 7, for example, made of ITO,
is arranged on this first layer 2. The layer thickness of this
third intermediate layer 7 made of ITO is between 5 and 40 nm. A
scratch protection layer 5 is arranged on this third intermediate
layer 7. This scratch protection layer 5 can be embodied from
TiO.sub.2, for example, and can have a layer thickness of 150
nm.
In a further design of the above-described exemplary embodiment
(not shown in greater detail), the electrode arrangement 1 has a
first intermediate layer 3, which comprises a metal or metal oxide,
for example, made of MoO.sub.3. A second intermediate layer 6 made
of Nb.sub.2O.sub.5 is arranged on this first intermediate layer 3,
which has a layer thickness between 5 and 40 nm. A first
intermediate layer 2 made of a metal, for example, Ag, is arranged
on this second intermediate layer 6, wherein the deposition of the
first layer 2 is performed by means of sputtering. A third
intermediate layer 7, for example, made of ITO, is arranged on this
first layer 2. The layer thickness of this third intermediate layer
7 made of ITO is between 5 and 40 nm. A second layer 4 is arranged
as an antireflection layer, which comprises, for example,
N,N'-bis(naphthalene-1-yl)-N,N'-bis(phenyl)-benzidine, on this
third intermediate layer 7. A scratch protection layer 5 is
arranged on this second layer 4. This scratch protection layer 5
can be embodied from TiO.sub.2, for example, and can have a layer
thickness of 150 nm.
In a further exemplary embodiment (not shown in greater detail),
the electrode arrangement 1 comprises a first intermediate layer 3
made of a metal or metal oxide, for example, made of MoO.sub.3. A
second intermediate layer 6 made of Mg is arranged on this first
intermediate layer 3, which has a layer thickness between 5 and 40
nm. A first layer 2 made of a metal alloy, for example, Ag:Mg, is
deposited on this second intermediate layer 6, wherein the
deposition of the first layer 2 is performed by sputtering. A third
intermediate layer 7, for example, made of Mg, is arranged on this
first layer 2. The layer thickness of this third intermediate layer
7 made of Mg is between 5 and 40 nm. A second layer 4 is arranged
as an antireflection layer, which comprises, for example, ZnS,
ZnSe, or ZnTe, on this third intermediate layer 7. A scratch
protection layer 5 is arranged on this second layer 4. This scratch
protection layer 5 can be embodied from TiO.sub.2, for example, and
can have a layer thickness of 150 nm.
In a further exemplary embodiment (not shown in greater detail),
the electrode arrangement 1 comprises a first intermediate layer 3
made of a metal or metal oxide, for example, made of MoO.sub.3. A
second intermediate layer 6 made of Nb.sub.2O.sub.5 is arranged on
this first intermediate layer 3, which has a layer thickness
between 5 and 40 nm. A first layer 2 made of a metal, for example,
Ag, is deposited on this second intermediate layer 6, wherein the
deposition of the first layer 2 is performed by sputtering. A third
intermediate layer 7, for example, made of ITO, is arranged on this
first layer 2. The layer thickness of this third intermediate layer
7 made of ITO is between 5 and 40 nm. A scratch protection layer 5
is arranged on this third intermediate layer 7. This scratch
protection layer 5 can be embodied from TiO.sub.2, for example, and
can have a layer thickness of 150 nm.
* * * * *